JP2008547166A - 製品、特にプレート材または棒材を大気圧で連続的にプラズマ処理およびプラズマコーティングの少なくともいずれかをする方法 - Google Patents

製品、特にプレート材または棒材を大気圧で連続的にプラズマ処理およびプラズマコーティングの少なくともいずれかをする方法 Download PDF

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Publication number
JP2008547166A
JP2008547166A JP2008517388A JP2008517388A JP2008547166A JP 2008547166 A JP2008547166 A JP 2008547166A JP 2008517388 A JP2008517388 A JP 2008517388A JP 2008517388 A JP2008517388 A JP 2008517388A JP 2008547166 A JP2008547166 A JP 2008547166A
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Prior art keywords
product
atmosphere
plasma
electrode
space
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Japanese (ja)
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JP2008547166A5 (https=
Inventor
プリンツ エックハルト
パーム ピーター
フェルスター フランク
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Softal Electronic Erik Blumenfeld & CoKg GmbH
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Softal Electronic Erik Blumenfeld & CoKg GmbH
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Publication of JP2008547166A5 publication Critical patent/JP2008547166A5/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348Dielectric barrier discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/2406Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/2406Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2437Multilayer systems
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/2406Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2418Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2008517388A 2005-06-24 2006-06-19 製品、特にプレート材または棒材を大気圧で連続的にプラズマ処理およびプラズマコーティングの少なくともいずれかをする方法 Pending JP2008547166A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005029360A DE102005029360B4 (de) 2005-06-24 2005-06-24 Zwei Verfahren zur kontinuierlichen Atmosphärendruck Plasmabehandlung von Werkstücken, insbesondere Materialplatten oder -bahnen
PCT/EP2006/005838 WO2007000255A2 (de) 2005-06-24 2006-06-19 Verfahren zur kontinuierlichen atmosphärendruck plasmabehandlung und/oder -beschichtung von werkstücken

Publications (2)

Publication Number Publication Date
JP2008547166A true JP2008547166A (ja) 2008-12-25
JP2008547166A5 JP2008547166A5 (https=) 2009-08-06

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JP2008517388A Pending JP2008547166A (ja) 2005-06-24 2006-06-19 製品、特にプレート材または棒材を大気圧で連続的にプラズマ処理およびプラズマコーティングの少なくともいずれかをする方法

Country Status (9)

Country Link
US (2) US20100112235A1 (https=)
EP (2) EP1902156B1 (https=)
JP (1) JP2008547166A (https=)
CN (1) CN101198718B (https=)
AT (2) ATE533339T1 (https=)
DE (2) DE102005029360B4 (https=)
DK (1) DK1902156T3 (https=)
PL (1) PL1894449T3 (https=)
WO (2) WO2007000255A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012191001A (ja) * 2011-03-10 2012-10-04 Sekisui Chem Co Ltd 表面処理方法及び装置
JP2012243859A (ja) * 2011-05-17 2012-12-10 Hitachi Ltd 大気圧プラズマ処理装置
JP2015005780A (ja) * 2014-09-25 2015-01-08 株式会社日立製作所 プラズマ処理装置

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2793367B1 (fr) 1999-05-03 2004-09-10 Jean Luc Stehle Dispositif d'authentification et de securisation pour un reseau informatique
DE102005029360B4 (de) * 2005-06-24 2011-11-10 Softal Corona & Plasma Gmbh Zwei Verfahren zur kontinuierlichen Atmosphärendruck Plasmabehandlung von Werkstücken, insbesondere Materialplatten oder -bahnen
DE102007018716A1 (de) 2007-04-20 2008-10-23 Schaeffler Kg Verfahren zum Aufbringen einer verschleißfesten Beschichtung
DE102007025151A1 (de) * 2007-05-29 2008-09-04 Innovent E.V. Verfahren zum Beschichten eines Substrats
DE102007025152B4 (de) * 2007-05-29 2012-02-09 Innovent E.V. Verfahren zum Beschichten eines Substrats
EP3020850B1 (en) 2009-07-08 2018-08-29 Aixtron SE Apparatus for plasma processing
JP5648349B2 (ja) * 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
DE102010024086A1 (de) * 2010-06-17 2011-12-22 WPNLB UG (haftungsbeschränkt) & Co. KG Vorrichtung zur kontinuierlichen Plasmabehandlung und/oder Plasmabeschichtung eines Materialstücks
US8765232B2 (en) * 2011-01-10 2014-07-01 Plasmasi, Inc. Apparatus and method for dielectric deposition
US9299956B2 (en) 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
US10526708B2 (en) 2012-06-19 2020-01-07 Aixtron Se Methods for forming thin protective and optical layers on substrates
US20130337657A1 (en) * 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
WO2014097620A1 (en) * 2012-12-21 2014-06-26 Asahi Glass Company Limited Ignition process and device for pairs of dbd electrodes
WO2014119349A1 (ja) * 2013-02-04 2014-08-07 株式会社クリエイティブ テクノロジー プラズマ発生装置
DE102013106315B4 (de) 2013-06-18 2016-09-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines physikalischen Plasmas
DE102016105976A1 (de) * 2016-04-01 2017-10-05 Dieffenbacher GmbH Maschinen- und Anlagenbau Vorrichtung zum Transport von Material
DE102016109044B3 (de) * 2016-05-17 2017-07-06 Leonhard Kurz Stiftung & Co. Kg Vorrichtung zur Oberflächenbehandlung eines Substrats
DE102016118569A1 (de) * 2016-09-30 2018-04-05 Cinogy Gmbh Elektrodenanordnung zur Ausbildung einer dielektrisch behinderten Plasmaentladung
DE102017118652A1 (de) 2017-08-16 2019-02-21 Hochschule Für Angewandte Wissenschaft Und Kunst Hildesheim/Holzminden/Göttingen Plasmageneratormodul und dessen Verwendung
EP3585136A1 (en) * 2018-06-20 2019-12-25 Masarykova Univerzita A method and device for generating low-temperature electrical water-based plasma at near-atmospheric pressures and its use
EP3814423B1 (en) 2018-06-29 2023-10-18 Dow Global Technologies LLC Foam bead and sintered foam structure
DE102019101997A1 (de) 2019-01-28 2020-07-30 Koenig & Bauer Ag Verfahren und Druckmaschine jeweils zum Bedrucken eines metallischen Bedruckstoffes

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61155430A (ja) * 1984-12-28 1986-07-15 Isuzu Motors Ltd プラズマ処理方法
JPH10310652A (ja) * 1997-05-14 1998-11-24 Toppan Printing Co Ltd 表面処理方法、その被処理物および表面処理装置
JP2000208296A (ja) * 1999-01-13 2000-07-28 Sekisui Chem Co Ltd 表面処理品の製造方法
JP2000356714A (ja) * 1999-04-15 2000-12-26 Konica Corp 偏光板用保護フィルム
JP2005026167A (ja) * 2003-07-01 2005-01-27 E Square:Kk プラズマ表面処理装置とその処理方法
JP2006005315A (ja) * 2004-06-21 2006-01-05 Seiko Epson Corp プラズマ処理装置およびプラズマ処理方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2616760B2 (ja) * 1985-04-08 1997-06-04 株式会社 半導体エネルギー研究所 プラズマ気相反応装置
DE3521318A1 (de) 1985-06-14 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung
CN1036286A (zh) * 1988-02-24 1989-10-11 珀金·埃莱姆公司 超导陶瓷的次大气压等离子体喷涂
JP2803017B2 (ja) * 1993-06-07 1998-09-24 工業技術院長 抗血栓性医用材料及び医療用具並びにこれらの製造方法、製造装置及びプラズマ処理装置
FR2770425B1 (fr) * 1997-11-05 1999-12-17 Air Liquide Procede et dispositif pour le traitement de surface d'un substrat par decharge electrique entre deux electrodes dans un melange gazeux
DK1047165T3 (da) * 1999-04-21 2002-05-21 Softal Elektronik Gmbh Barriereelektrode til overfladebehandling af elektrisk ledende eller ikke-ledende materialer samt arrangement af sådanne barriereelektroder
US6150430A (en) * 1999-07-06 2000-11-21 Transitions Optical, Inc. Process for adhering a photochromic coating to a polymeric substrate
EP1073091A3 (en) * 1999-07-27 2004-10-06 Matsushita Electric Works, Ltd. Electrode for plasma generation, plasma treatment apparatus using the electrode, and plasma treatment with the apparatus
EP1125972A1 (fr) * 2000-02-11 2001-08-22 L'air Liquide Société Anonyme pour l'étude et l'exploitation des procédés Georges Claude Procédé de traitement de surface de subtrats polymères
ES2220711T3 (es) * 2000-02-11 2004-12-16 Dow Corning Ireland Limited Sistema de plasma a presion atmosferica.
JP2002018276A (ja) * 2000-07-10 2002-01-22 Pearl Kogyo Kk 大気圧プラズマ処理装置
JP4254236B2 (ja) * 2000-12-12 2009-04-15 コニカミノルタホールディングス株式会社 薄膜形成方法
US6849306B2 (en) * 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
AU2002326783A1 (en) * 2001-08-27 2003-03-10 University Of New Hampshire Dielectric barrier discharge process for depositing silicon nitride film on substrates
JP4140289B2 (ja) * 2002-06-10 2008-08-27 コニカミノルタホールディングス株式会社 大気圧プラズマ放電処理装置、大気圧プラズマ放電処理方法及び光学素子
JP4433680B2 (ja) * 2002-06-10 2010-03-17 コニカミノルタホールディングス株式会社 薄膜形成方法
DE10228506B4 (de) * 2002-06-24 2015-10-08 Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - Verfahren und Vorrichtung zum Modifizieren von Oberflächen durch dielektrisch behinderte Entladung unter Atmosphärendruck
US7288204B2 (en) * 2002-07-19 2007-10-30 Fuji Photo Film B.V. Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG)
CA2465879C (en) * 2002-08-30 2008-10-07 Sekisui Chemical Co., Ltd. Plasma processing apparatus
DE10300439B4 (de) 2003-01-09 2017-06-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Behandeln von Oberflächen
EP1643002A4 (en) * 2003-06-06 2009-11-11 Konica Minolta Holdings Inc METHOD FOR FORMING THIN LAYERS AND ARTICLE COMPRISING A THIN LAYER
US7365956B2 (en) * 2004-06-14 2008-04-29 Douglas Burke Plasma driven, N-type semiconductor, thermoelectric power superoxide ion generator with critical bias conditions
BG66022B1 (bg) * 2005-06-14 2010-10-29 ДИНЕВ Петър Метод за плазмено-химична повърхнинна модификация
DE102005029360B4 (de) * 2005-06-24 2011-11-10 Softal Corona & Plasma Gmbh Zwei Verfahren zur kontinuierlichen Atmosphärendruck Plasmabehandlung von Werkstücken, insbesondere Materialplatten oder -bahnen
US20070154650A1 (en) * 2005-12-30 2007-07-05 Atomic Energy Council - Institute Of Nuclear Energy Research Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61155430A (ja) * 1984-12-28 1986-07-15 Isuzu Motors Ltd プラズマ処理方法
JPH10310652A (ja) * 1997-05-14 1998-11-24 Toppan Printing Co Ltd 表面処理方法、その被処理物および表面処理装置
JP2000208296A (ja) * 1999-01-13 2000-07-28 Sekisui Chem Co Ltd 表面処理品の製造方法
JP2000356714A (ja) * 1999-04-15 2000-12-26 Konica Corp 偏光板用保護フィルム
JP2005026167A (ja) * 2003-07-01 2005-01-27 E Square:Kk プラズマ表面処理装置とその処理方法
JP2006005315A (ja) * 2004-06-21 2006-01-05 Seiko Epson Corp プラズマ処理装置およびプラズマ処理方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012191001A (ja) * 2011-03-10 2012-10-04 Sekisui Chem Co Ltd 表面処理方法及び装置
JP2012243859A (ja) * 2011-05-17 2012-12-10 Hitachi Ltd 大気圧プラズマ処理装置
JP2015005780A (ja) * 2014-09-25 2015-01-08 株式会社日立製作所 プラズマ処理装置

Also Published As

Publication number Publication date
ATE533339T1 (de) 2011-11-15
CN101198718B (zh) 2010-05-26
DK1902156T3 (da) 2009-08-24
DE502006003822D1 (de) 2009-07-09
EP1894449A2 (de) 2008-03-05
US7989034B2 (en) 2011-08-02
WO2007000255A3 (de) 2007-04-26
EP1902156A2 (de) 2008-03-26
ATE432379T1 (de) 2009-06-15
WO2007000255A2 (de) 2007-01-04
WO2007016999A3 (de) 2009-09-03
US20100112235A1 (en) 2010-05-06
EP1902156B1 (de) 2009-05-27
US20100221451A1 (en) 2010-09-02
DE102005029360B4 (de) 2011-11-10
CN101198718A (zh) 2008-06-11
EP1894449B1 (de) 2011-11-09
DE102005029360A1 (de) 2006-12-28
WO2007016999A2 (de) 2007-02-15
PL1894449T3 (pl) 2012-04-30

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