JP2008539580A - 画像センサを備えた半導体装置及びその製造方法 - Google Patents
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- JP2008539580A JP2008539580A JP2008508395A JP2008508395A JP2008539580A JP 2008539580 A JP2008539580 A JP 2008539580A JP 2008508395 A JP2008508395 A JP 2008508395A JP 2008508395 A JP2008508395 A JP 2008508395A JP 2008539580 A JP2008539580 A JP 2008539580A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000005855 radiation Effects 0.000 claims abstract description 56
- 238000002955 isolation Methods 0.000 claims abstract description 48
- 239000011159 matrix material Substances 0.000 claims abstract description 13
- 230000005669 field effect Effects 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000003860 storage Methods 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 230000000737 periodic effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (11)
- 基板と半導体画像センサを備えた半導体ボディとを具備する半導体装置であって、前記画像センサは、各々が放射線感受性素子を含む画素の2次元マトリクスを有し、前記放射線感受性素子は、前記画素を選択するための選択手段により当該放射線感受性素子を読み取るための複数のMOS電界効果トランジスタに結合され、前記放射線感受性素子の各々は、入射放射線により発生した電荷キャリアが蓄積される第1の導電型の半導体領域を含み、前記半導体領域に横方向において隣接する前記半導体ボディの一部の表面において前記半導体ボディの一部は、前記第1の導電型とは逆の第2の導電型であり、隣接する画素を分離するためにアイソレーション領域が沈下させられ、前記アイソレーション領域の下における前記第2の導電型の前記半導体ボディの一部において、前記第2の導電型のさらなる半導体領域が高ドーピング濃度を有して形成され、
前記さらなる半導体領域は、前記半導体ボディの表面において沈下し、前記アイソレーション領域よりも広い、
半導体装置。 - 請求項1に記載の半導体装置であって、前記アイソレーション領域は、2つの隣接画素の間に排他的に配され、1の画素の放射線感受性素子が他の画素のMOSトランジスタと隣接し、それらの放射線感受性素子を備えた2つの隣接画素が互いに隣接し、高ドーピング濃度を有し前記半導体ボディの一部の表面において沈下させられている前記第2の導電型のもう1つの半導体領域がある、装置。
- 請求項2に記載の半導体装置であって、前記さらなる半導体領域及び前記他の半導体領域は、同時に形成される、装置。
- 請求項3に記載の半導体装置であって、前記さらなる半導体領域及び前記他の半導体領域は、CMOSプロセスからのウェルにより形成される、装置。
- 請求項1ないし4のうちいずれか1つに記載の半導体装置であって、電界効果トランジスタをさらに有し、それらのうちNMOS及びPMOSトランジスタが前記画像センサを越えて位置づけられる、装置。
- 請求項1ないし5のうちいずれか1つに記載の半導体装置であって、前記アイソレーション領域は、いわゆる浅い溝のアイソレーションを有する、装置。
- 請求項1ないし6のうちいずれか1つに記載の半導体装置であって、第1の導電型は、n型導電性である、装置。
- 基板と、各々が放射線感受性素子を有する画素の2次元マトリクスを有する半導体画像センサを備える半導体ボディとを有する半導体装置の製造方法であって、前記放射線感受性素子は、前記画素を選択するための選択手段を介して前記放射線感受性素子を読み出すための複数のMOS電界効果トランジスタに結合され、各放射線感受性素子は、入射放射線により発生した電荷キャリアが蓄積され隣接の画素を分離するためのアイソレーション領域が前記半導体ボディの一部の表面において沈下した第1の導電型の半導体領域を有し、当該一部は前記半導体領域に横方向において隣接し前記第1の導電型とは反対の第2の導電型とされ、前記アイソレーション領域の下における前記第2の導電型の前記半導体ボディの当該一部において、前記第2の導電型のさらなる半導体領域が高ドーピング濃度を有して形成され、
前記さらなる半導体領域は、前記半導体ボディの表面において沈下し、前記アイソレーション領域よりも広く形成されている、
方法。 - 請求項8に記載の方法であって、前記アイソレーション領域は、2つの隣接の画素の間において1の画素の放射線感受性素子が他の画素のMOSトランジスタに隣接している場合、及び2つの隣接の画素がそれらの放射線感受性素子と互いに隣接している場合にのみ形成され、前記第2の導電型のもう1つの半導体領域は、前記半導体ボディの一部の表面において沈下され高ドーピング濃度を有して形成される、方法。
- 請求項9に記載の方法であって、前記さらなる半導体領域及び前記他の半導体領域は、同時に形成される、方法。
- 請求項9又は10に記載の方法であって、前記さらなる半導体領域及び前記他の半導体領域は、CMOSプロセスからのウェル形成ステップにより形成される、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05103594 | 2005-04-29 | ||
EP05103594.7 | 2005-04-29 | ||
PCT/IB2006/051301 WO2006117725A1 (en) | 2005-04-29 | 2006-04-26 | Semiconductor device with an image sensor and method for the manufacture of such a device |
Publications (2)
Publication Number | Publication Date |
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JP2008539580A true JP2008539580A (ja) | 2008-11-13 |
JP5292628B2 JP5292628B2 (ja) | 2013-09-18 |
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JP2008508395A Expired - Fee Related JP5292628B2 (ja) | 2005-04-29 | 2006-04-26 | 画像センサを備えた半導体装置及びその製造方法 |
Country Status (6)
Country | Link |
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US (1) | US8686481B2 (ja) |
EP (1) | EP1878055B1 (ja) |
JP (1) | JP5292628B2 (ja) |
KR (1) | KR20080003830A (ja) |
CN (1) | CN100565892C (ja) |
WO (1) | WO2006117725A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015012175A (ja) * | 2013-06-28 | 2015-01-19 | キヤノン株式会社 | 光電変換装置の製造方法、光電変換装置、及び撮像システム |
JP2015012174A (ja) * | 2013-06-28 | 2015-01-19 | キヤノン株式会社 | 光電変換装置、及び撮像システム |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4759590B2 (ja) | 2008-05-09 | 2011-08-31 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP5511180B2 (ja) * | 2008-12-19 | 2014-06-04 | キヤノン株式会社 | 固体撮像装置の製造方法及び固体撮像装置 |
JP5241886B2 (ja) * | 2011-05-30 | 2013-07-17 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
Citations (6)
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JPH04199878A (ja) * | 1990-11-29 | 1992-07-21 | Mitsubishi Electric Corp | 固体撮像装置 |
JPH11307753A (ja) * | 1998-04-22 | 1999-11-05 | Sharp Corp | Cmos型固体撮像装置 |
JP2000299453A (ja) * | 1999-02-09 | 2000-10-24 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2002270808A (ja) * | 2001-03-13 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Mos型撮像装置 |
JP2004186311A (ja) * | 2002-12-02 | 2004-07-02 | Fuji Film Microdevices Co Ltd | Mos型イメージセンサ及びデジタルカメラ |
JP2004282043A (ja) * | 2003-03-13 | 2004-10-07 | Hynix Semiconductor Inc | Cmosイメージセンサの製造方法 |
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2006
- 2006-04-26 CN CNB2006800147758A patent/CN100565892C/zh not_active Expired - Fee Related
- 2006-04-26 US US11/912,697 patent/US8686481B2/en active Active
- 2006-04-26 JP JP2008508395A patent/JP5292628B2/ja not_active Expired - Fee Related
- 2006-04-26 WO PCT/IB2006/051301 patent/WO2006117725A1/en not_active Application Discontinuation
- 2006-04-26 EP EP06728051.1A patent/EP1878055B1/en not_active Not-in-force
- 2006-04-26 KR KR1020077024444A patent/KR20080003830A/ko not_active Application Discontinuation
Patent Citations (6)
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JPH04199878A (ja) * | 1990-11-29 | 1992-07-21 | Mitsubishi Electric Corp | 固体撮像装置 |
JPH11307753A (ja) * | 1998-04-22 | 1999-11-05 | Sharp Corp | Cmos型固体撮像装置 |
JP2000299453A (ja) * | 1999-02-09 | 2000-10-24 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2002270808A (ja) * | 2001-03-13 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Mos型撮像装置 |
JP2004186311A (ja) * | 2002-12-02 | 2004-07-02 | Fuji Film Microdevices Co Ltd | Mos型イメージセンサ及びデジタルカメラ |
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Cited By (2)
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JP2015012175A (ja) * | 2013-06-28 | 2015-01-19 | キヤノン株式会社 | 光電変換装置の製造方法、光電変換装置、及び撮像システム |
JP2015012174A (ja) * | 2013-06-28 | 2015-01-19 | キヤノン株式会社 | 光電変換装置、及び撮像システム |
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Publication number | Publication date |
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CN101171688A (zh) | 2008-04-30 |
KR20080003830A (ko) | 2008-01-08 |
EP1878055A1 (en) | 2008-01-16 |
US20080197386A1 (en) | 2008-08-21 |
JP5292628B2 (ja) | 2013-09-18 |
CN100565892C (zh) | 2009-12-02 |
WO2006117725A1 (en) | 2006-11-09 |
EP1878055B1 (en) | 2014-02-12 |
US8686481B2 (en) | 2014-04-01 |
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