JP2008535266A - 三重項状態への直接注入を利用するoled - Google Patents
三重項状態への直接注入を利用するoled Download PDFInfo
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- JP2008535266A JP2008535266A JP2008504417A JP2008504417A JP2008535266A JP 2008535266 A JP2008535266 A JP 2008535266A JP 2008504417 A JP2008504417 A JP 2008504417A JP 2008504417 A JP2008504417 A JP 2008504417A JP 2008535266 A JP2008535266 A JP 2008535266A
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- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
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- 125000004429 atom Chemical group 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 235000013367 dietary fats Nutrition 0.000 description 2
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- 239000010520 ghee Substances 0.000 description 2
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- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
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- 238000010129 solution processing Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- RKVIAZWOECXCCM-UHFFFAOYSA-N 2-carbazol-9-yl-n,n-diphenylaniline Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)C1=CC=CC=C1 RKVIAZWOECXCCM-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- GXGJIOMUZAGVEH-UHFFFAOYSA-N Chamazulene Chemical group CCC1=CC=C(C)C2=CC=C(C)C2=C1 GXGJIOMUZAGVEH-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- ZGUMCPODCOQROF-UHFFFAOYSA-K aluminum 8-hydroxy-2-methyl-1H-quinoline-2-carboxylate 4-phenylphenolate Chemical compound [Al+3].C1(=CC=CC=C1)C1=CC=C(C=C1)[O-].CC1(NC2=C(C=CC=C2C=C1)O)C(=O)[O-].CC1(NC2=C(C=CC=C2C=C1)O)C(=O)[O-] ZGUMCPODCOQROF-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- KYPOHTVBFVELTG-UHFFFAOYSA-N but-2-enedinitrile Chemical group N#CC=CC#N KYPOHTVBFVELTG-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/18—Light sources with substantially two-dimensional radiating surfaces characterised by the nature or concentration of the activator
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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- Electroluminescent Light Sources (AREA)
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Abstract
Description
本明細書で使用されるとき、略語は、以下のように材料を参照する。
CBP:4,4'-N,N-ジカルバゾールバイフェニル
m-MTDATA:4,4',4"-トリス(3-メチルフェニルフェニルアミノ)トリフェニルアミン
Alq3:8-トリス-ヒドロキシキノリンアルミニウム
Bphen:4,7-ジフェニル-1,10-フェナントロリン
n-BPhen:nドープされたBPhen(リチウムでドープされた)
F4-TCNQ:テトラフルオロテトラシアノキノンジメチレン
p-MTDATA:pドープされたm-MTDATA(F4-TCNQでドープされた)
Ir(ppy)3:トリス(2-フェニルピリジン)イリジウム
Ir(ppz)3:トリス(1-フェニルピラゾロト,N,C(2')イリジウム(III))
BCP:2,9-ジメチル-4,7-ジフェニル-1,10-フェナントロリン
TAZ:3-フェニル-4-(1'-ナフチル)-5-フェニル-1,2,4-トリアゾール
CuPc-:銅フタロシアニン
ITO:酸化インジウム錫
NPD:N,N'-ジフェニル-N,N'-ジ(1-ナフチル)ベンジジン
TPD:N,N'-ジフェニル-N,N'-ジ(3-トリル)ベンジジン
BAlq:アルミニウム(III)ビス(2-メチル-8-ヒドロキシキノリネート)4-フェニルフェノレート
mCP:1,3-N,N'-ジカルボゾール-ベンゼン
DCM:4-(ジシアノエチレン)-6-(4-ジメチルアミノスチリル-2-メチル)-4H-パイラン
DMQA:N,N'-ジメチルキナクリドン
PEDOT-PSS:ポリスチレンサルフォネート(PSS)を有するポリ(3,4-エチレンジオキシチオフェン)の水性分散剤
TCTA:4,4',4"-トリス(カルバゾール-9-yl)トリフェニルアミン
110、210 基板
115、230 アノード
120 正孔注入層
125、225 正孔輸送層
130 電子遮断層
135、220 発光層
140 正孔遮断層
145 電子輸送層
150 電子注入層
155 保護層
160、215 カソード
162 第1の導電層
164 第2の導電層
200 反転OLED
Claims (23)
- 有機光電子デバイスであって、
a)アノードと、
b)カソードと、
c)前記アノードと前記カソードとの間に配置された発光層であって、
i)燐光ドーパントHOMOエネルギーレベル、燐光ドーパントLUMOエネルギーレベル、三重項エネルギー、および一重項エネルギーを有する燐光ドーパントと、
ii)発光層ホストHOMOエネルギーレベルおよび発光層ホストLUMOエネルギーレベルを有する発光層ホストとを含む発光層と、
d)前記発光層に隣接して配置される輸送層とを備え、
前記輸送層は、第1の材料HOMOエネルギーレベルおよび第1の材料LUMOエネルギーレベルを有する第1の材料を備え、電子正孔対は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しいエネルギー差エネルギー差を越えて直接再結合する有機光電子デバイス。 - 前記発光層ホストLUMOと前記燐光ドーパントHOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項1に記載のデバイス。
- 前記発光層ホストHOMOと前記燐光ドーパントLUMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項1に記載のデバイス。
- 前記輸送層は電子輸送層であり、前記第1の材料LUMOと前記燐光ドーパントHOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項1に記載のデバイス。
- 前記輸送層は正孔輸送層であり、前記第1の材料HOMOと前記燐光ドーパントLUMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項1に記載のデバイス。
- 電子輸送材料を含む電子輸送層と、正孔輸送材料を含む正孔輸送層との2つの輸送層を備え、前記電子輸送材料LUMOと前記正孔輸送材料HOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項1に記載のデバイス。
- 前記エネルギー差は、前記燐光ドーパントの前記一重項エネルギーより低い少なくとも約0.2eVである請求項6に記載のデバイス。
- 前記燐光ドーパントは、約500nm未満である発光スペクトルにピークを有する請求項1に記載のデバイス。
- 有機光電子デバイスであって、
a)アノードと、
b)カソードと、
c)前記アノードと前記カソードとの間に配置された発光層であって、
i)燐光ドーパントHOMOエネルギーレベル、燐光ドーパントLUMOエネルギーレベル、三重項エネルギー、および一重項エネルギーを有する燐光ドーパントと、
ii)発光層ホストHOMOエネルギーレベルおよび発光層ホストLUMOエネルギーレベルを有する発光層ホストとを備える発光層と、
d)前記発光層に隣接して配置される輸送層とを備え、前記輸送層は、それぞれHOMOエネルギーレベルおよびLUMOエネルギーレベルを有する複数の材料を含み、各前記複数の材料の少なくとも1つのエネルギーレベルは、前記発光層における少なくとも1つのエネルギーレベルに導く一連のエネルギーステップを共に形成し、一連のエネルギーステップにおける各ステップは、約0.2eV以下であるデバイス。 - 前記輸送層は、正孔輸送層であり、前記複数の材料の前記HOMOエネルギーレベルは、前記発光層ホストHOMOまたは前記燐光ドーパントHOMOに導く一連のエネルギーステップを形成し、前記一連のエネルギーステップにおける各ステップは、約0.2eV以下である請求項9に記載のデバイス。
- 前記一連のエネルギーステップは、前記発光層ホストHOMOに導き、前記発光層ホストHOMOと前記燐光ドーパントLUMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項10に記載のデバイス。
- 前記一連のエネルギーステップは、前記燐光ドーパントHOMOに導き、前記燐光ドーパントHOMOと前記発光層ホストLUMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項10に記載のデバイス。
- 前記輸送層は、電子輸送層であり、前記複数の材料の前記LUMOエネルギーレベルは、前記発光層ホストLUMOまたは前記燐光ドーパントLUMOに導く一連のエネルギーステップを形成し、前記一連のエネルギーステップにおける各ステップは、約0.2eV以下である請求項9に記載のデバイス。
- 前記一連のエネルギーステップは、前記発光層ホストLUMOに導き、前記発光層ホストLUMOと前記燐光ドーパントHOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項13に記載のデバイス。
- 前記一連のエネルギーステップは、前記燐光ドーパントLUMOに導き、前記燐光ドーパントLUMOと前記発光層ホストHOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しい請求項13に記載のデバイス。
- 前記輸送層は、前記発光層に隣接して配置される副層を備え、前記副層は、前記複数の材料の1つ以上の層の混合物でドープされた輸送層ホストを含む請求項9に記載のデバイス。
- 前記輸送層ホストは、前記複数の材料の全ての混合物でドープされる請求項16に記載のデバイス。
- 前記輸送層ホストは、ほぼ等しい比率で前記複数の材料の全ての混合物でドープされる請求項17に記載のデバイス。
- 前記輸送層は、複数の隣接する副層を備え、各副層は、前記複数の材料の単一の材料でドープされた輸送層ホストを含む請求項9に記載のデバイス。
- 前記輸送層全体は、前記複数の材料の1つ以上の材料でドープされる請求項9に記載のデバイス。
- 前記輸送層は、
a)隣接して配置されたドープされていない副層と、
b)隣接して配置され、前記複数の材料の1つ以上の材料を含むドープされた副層と、
c)前記発光層とを備える請求項9に記載のデバイス。 - 前記複数の材料の1つ以上の材料は、前記一連のエネルギーステップを形成するためにニート層として堆積される請求項9に記載のデバイス。
- a)基板上にアノードを堆積する段階と、
b)前記アノード上に発光層を堆積する段階であって、前記発光層は、
i)燐光ドーパントHOMOエネルギーレベル、燐光ドーパントLUMOエネルギーレベル、三重項エネルギー、および一重項エネルギーを有する燐光ドーパントと、
ii)発光層ホストHOMOエネルギーレベルおよび発光層ホストLUMOエネルギーレベルを有する発光層ホストとを含む、前記段階と、
c)前記発光層上に電子輸送層を堆積する段階であって、前記電子輸送層は、電子輸送材料LUMOエネルギーレベルを有する電子輸送材料を含む段階と、
d)前記電子輸送層上にカソードを堆積する段階とを含み、
i)前記電子輸送材料LUMOまたは前記発光層ホストLUMOと、ii)前記燐光ドーパントHOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーに少なくともほぼ等しく、かつ前記燐光ドーパントの前記一重項エネルギーより少なくとも約0.2eV未満である方法。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110082557A (ko) * | 2008-10-07 | 2011-07-19 | 오스람 옵토 세미컨덕터스 게엠베하 | 복사 방출 장치 |
JP2011222976A (ja) * | 2010-03-23 | 2011-11-04 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器、および照明装置 |
JP2013539207A (ja) * | 2010-07-30 | 2013-10-17 | メルク パテント ゲーエムベーハー | 有機エレクトロルミネセンスデバイス |
JP2014529894A (ja) * | 2011-08-22 | 2014-11-13 | メルク パテント ゲーエムベーハー | 有機エレクトロルミネッセンス素子 |
JP2017108108A (ja) * | 2015-09-30 | 2017-06-15 | 株式会社半導体エネルギー研究所 | 発光素子、表示装置、電子機器、及び照明装置 |
JP2018505162A (ja) * | 2015-01-19 | 2018-02-22 | シーメンス アクチエンゲゼルシヤフトSiemens Aktiengesellschaft | 有機エレクトロニクスにおけるn−ドーパントとしてのアミノフォスファゼン塩基 |
JP2020184568A (ja) * | 2019-05-07 | 2020-11-12 | キヤノン株式会社 | 有機発光素子、それを有する表示装置、撮像装置、照明装置、移動体 |
WO2022211041A1 (ja) * | 2021-04-01 | 2022-10-06 | 大学共同利用機関法人自然科学研究機構 | 有機el素子 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4412264B2 (ja) * | 2005-09-12 | 2010-02-10 | ソニー株式会社 | 表示装置および表示装置の製造方法 |
US8148891B2 (en) * | 2005-10-04 | 2012-04-03 | Universal Display Corporation | Electron impeding layer for high efficiency phosphorescent OLEDs |
US8008856B2 (en) * | 2006-04-19 | 2011-08-30 | Massachusetts Institute Of Technology | Light emitting devices with agent to increase the fraction of excitons formed as a singlet |
US7879401B2 (en) * | 2006-12-22 | 2011-02-01 | The Regents Of The University Of Michigan | Organic vapor jet deposition using an exhaust |
JP5300255B2 (ja) * | 2007-02-07 | 2013-09-25 | ユー・ディー・シー アイルランド リミテッド | 有機電界発光素子 |
US20080309217A1 (en) * | 2007-05-18 | 2008-12-18 | Mulder Carlijn L | Organic light emitting devices |
DE102008033563A1 (de) | 2008-07-17 | 2010-01-21 | Merck Patent Gmbh | Komplexe mit kleinen Singulett-Triplett-Energie-Abständen zur Verwendung in opto-elektronischen Bauteilen (Singulett-Harvesting-Effekt) |
JP5325707B2 (ja) * | 2008-09-01 | 2013-10-23 | 株式会社半導体エネルギー研究所 | 発光素子 |
KR100994118B1 (ko) * | 2009-01-13 | 2010-11-15 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 그 제조 방법 |
JP5550311B2 (ja) * | 2009-11-10 | 2014-07-16 | キヤノン株式会社 | 有機el素子 |
JP4620802B1 (ja) * | 2010-01-20 | 2011-01-26 | 富士フイルム株式会社 | 有機電界発光素子 |
TWI506121B (zh) | 2010-03-31 | 2015-11-01 | Semiconductor Energy Lab | 發光元件,發光裝置,電子裝置以及照明裝置 |
JP2013201153A (ja) * | 2010-06-08 | 2013-10-03 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2012033918A (ja) * | 2010-07-08 | 2012-02-16 | Mitsubishi Chemicals Corp | 有機電界発光素子、有機電界発光デバイス、有機el表示装置及び有機el照明 |
KR101369603B1 (ko) * | 2011-02-16 | 2014-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 엘리먼트, 발광 디바이스, 조명 디바이스 및 전자 디바이스 |
KR101429537B1 (ko) * | 2011-07-11 | 2014-08-12 | 엘지디스플레이 주식회사 | 유기발광소자 |
KR101965014B1 (ko) * | 2011-07-14 | 2019-04-02 | 유니버셜 디스플레이 코포레이션 | Oled에서 무기 호스트 |
KR101419810B1 (ko) | 2012-04-10 | 2014-07-15 | 서울대학교산학협력단 | 엑시플렉스를 형성하는 공동 호스트를 포함하는 유기 발광 소자 |
US8853070B2 (en) | 2012-04-13 | 2014-10-07 | Oti Lumionics Inc. | Functionalization of a substrate |
US9698386B2 (en) | 2012-04-13 | 2017-07-04 | Oti Lumionics Inc. | Functionalization of a substrate |
WO2013157506A1 (en) * | 2012-04-20 | 2013-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic appliance, and lighting device |
JP5959970B2 (ja) | 2012-07-20 | 2016-08-02 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
KR101960943B1 (ko) * | 2012-11-28 | 2019-03-20 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102255202B1 (ko) * | 2013-05-29 | 2021-05-25 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
WO2014194971A1 (de) * | 2013-06-06 | 2014-12-11 | Merck Patent Gmbh | Organische elektrolumineszenzvorrichtung |
KR102078296B1 (ko) * | 2013-06-21 | 2020-02-18 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
DE112014003470T5 (de) * | 2013-08-29 | 2016-05-25 | The Regents Of The University Of Michigan | Organische elektronische Vorrichtungen mit mehreren lösungsverarbeiteten Schichten |
US9385348B2 (en) | 2013-08-29 | 2016-07-05 | The Regents Of The University Of Michigan | Organic electronic devices with multiple solution-processed layers |
US9666822B2 (en) | 2013-12-17 | 2017-05-30 | The Regents Of The University Of Michigan | Extended OLED operational lifetime through phosphorescent dopant profile management |
JP6307993B2 (ja) * | 2014-04-07 | 2018-04-11 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子、及び、電子デバイス |
KR102353647B1 (ko) * | 2014-08-29 | 2022-01-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 표시 장치, 전자 기기, 및 조명 장치 |
US20160248030A1 (en) * | 2014-09-04 | 2016-08-25 | Boe Technology Group Co., Ltd. | Organic electroluminescent display deivce, a fabricating method thereof and a display device |
EP3216066B1 (en) | 2014-11-05 | 2021-05-26 | Okinawa Institute of Science and Technology School Corporation | Doping engineered hole transport layer for perovskite-based device |
KR102376968B1 (ko) * | 2014-11-17 | 2022-03-22 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
CN108292714B (zh) * | 2015-06-29 | 2020-04-28 | Imec 非营利协会 | 有机层的高分辨率图案化方法 |
DE112016005489T5 (de) | 2015-12-01 | 2018-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Licht emittierendes Element, Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung |
KR102641614B1 (ko) * | 2016-09-29 | 2024-02-27 | 엘지디스플레이 주식회사 | 유기발광다이오드 및 이를 포함하는 유기발광 표시장치 |
JP7082984B2 (ja) | 2017-02-20 | 2022-06-09 | ノヴァレッド ゲーエムベーハー | 電子半導体デバイスおよびその電子半導体デバイスの製造方法および化合物 |
KR102395782B1 (ko) * | 2017-07-31 | 2022-05-09 | 삼성전자주식회사 | 유기 발광 소자 |
WO2019159216A1 (ja) * | 2018-02-13 | 2019-08-22 | シャープ株式会社 | 発光デバイス |
JP7158945B2 (ja) * | 2018-08-02 | 2022-10-24 | キヤノン株式会社 | 白色有機el素子 |
EP3640999B1 (en) * | 2018-10-15 | 2022-01-05 | cynora GmbH | Organic electroluminescent device emitting blue light |
KR102349278B1 (ko) | 2019-09-03 | 2022-01-11 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
KR20210071572A (ko) | 2019-12-06 | 2021-06-16 | 엘지디스플레이 주식회사 | 백색 유기 발광 소자 및 이를 이용한 표시 장치 |
US20230134846A1 (en) * | 2020-03-26 | 2023-05-04 | Sharp Kabushiki Kaisha | Light emitting element and display device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006270053A (ja) * | 2005-02-28 | 2006-10-05 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769292A (en) * | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
GB8909011D0 (en) * | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
JP3249297B2 (ja) * | 1994-07-14 | 2002-01-21 | 三洋電機株式会社 | 有機電界発光素子 |
US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US6548956B2 (en) * | 1994-12-13 | 2003-04-15 | The Trustees Of Princeton University | Transparent contacts for organic devices |
BR9711155B1 (pt) * | 1996-08-12 | 2009-05-05 | dispositivo de emissão de luz orgánico flexìvel não-polimérico. | |
US5844363A (en) * | 1997-01-23 | 1998-12-01 | The Trustees Of Princeton Univ. | Vacuum deposited, non-polymeric flexible organic light emitting devices |
US6091195A (en) * | 1997-02-03 | 2000-07-18 | The Trustees Of Princeton University | Displays having mesa pixel configuration |
US6013982A (en) * | 1996-12-23 | 2000-01-11 | The Trustees Of Princeton University | Multicolor display devices |
US5834893A (en) * | 1996-12-23 | 1998-11-10 | The Trustees Of Princeton University | High efficiency organic light emitting devices with light directing structures |
US5925980A (en) * | 1997-05-01 | 1999-07-20 | Motorola, Inc. | Organic electroluminescent device with graded region |
US6303238B1 (en) * | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US6337102B1 (en) * | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US6087196A (en) * | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
GB9805476D0 (en) | 1998-03-13 | 1998-05-13 | Cambridge Display Tech Ltd | Electroluminescent devices |
US6097147A (en) * | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
US6830828B2 (en) * | 1998-09-14 | 2004-12-14 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
GB9822963D0 (en) * | 1998-10-20 | 1998-12-16 | Agner Erik | Improvements in or relating to chromatography |
US6310360B1 (en) * | 1999-07-21 | 2001-10-30 | The Trustees Of Princeton University | Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
US6294398B1 (en) * | 1999-11-23 | 2001-09-25 | The Trustees Of Princeton University | Method for patterning devices |
US6645645B1 (en) * | 2000-05-30 | 2003-11-11 | The Trustees Of Princeton University | Phosphorescent organic light emitting devices |
US6939624B2 (en) * | 2000-08-11 | 2005-09-06 | Universal Display Corporation | Organometallic compounds and emission-shifting organic electrophosphorescence |
US6573651B2 (en) * | 2000-12-18 | 2003-06-03 | The Trustees Of Princeton University | Highly efficient OLEDs using doped ambipolar conductive molecular organic thin films |
SG138466A1 (en) * | 2000-12-28 | 2008-01-28 | Semiconductor Energy Lab | Luminescent device |
JP5265840B2 (ja) * | 2001-03-14 | 2013-08-14 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 有機発光ダイオード類に基づく青色リン光用の材料および素子 |
US7071615B2 (en) * | 2001-08-20 | 2006-07-04 | Universal Display Corporation | Transparent electrodes |
KR100439648B1 (ko) * | 2001-08-29 | 2004-07-12 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자 |
WO2003022008A1 (en) * | 2001-08-29 | 2003-03-13 | The Trustees Of Princeton University | Organic light emitting devices having carrier transporting layers comprising metal complexes |
US6835469B2 (en) | 2001-10-17 | 2004-12-28 | The University Of Southern California | Phosphorescent compounds and devices comprising the same |
JP4032783B2 (ja) * | 2002-03-15 | 2008-01-16 | 株式会社デンソー | 有機el素子 |
US20030230980A1 (en) * | 2002-06-18 | 2003-12-18 | Forrest Stephen R | Very low voltage, high efficiency phosphorescent oled in a p-i-n structure |
US6835169B2 (en) * | 2002-07-11 | 2004-12-28 | Stephen K. Tamaribuchi | Ergonomic handheld exercisers |
US20040043140A1 (en) | 2002-08-21 | 2004-03-04 | Ramesh Jagannathan | Solid state lighting using compressed fluid coatings |
KR100624406B1 (ko) * | 2002-12-30 | 2006-09-18 | 삼성에스디아이 주식회사 | 비페닐 유도체 및 이를 채용한 유기 전계 발광 소자 |
JP2004319456A (ja) * | 2003-03-31 | 2004-11-11 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子 |
US20040209116A1 (en) * | 2003-04-21 | 2004-10-21 | Xiaofan Ren | Organic light emitting devices with wide gap host materials |
TWI428053B (zh) * | 2004-02-09 | 2014-02-21 | Idemitsu Kosan Co | Organic electroluminescent element |
US20060289882A1 (en) * | 2004-07-30 | 2006-12-28 | Kazuki Nishimura | Organic electroluminescent element and organic electroluminescent display device |
US8143613B2 (en) * | 2007-11-27 | 2012-03-27 | The Regents Of The University Of Michigan | Organic light emitting device having multiple separate emissive layers |
-
2005
- 2005-11-16 US US11/274,091 patent/US7683536B2/en active Active
-
2006
- 2006-03-29 KR KR1020077022361A patent/KR101255871B1/ko active IP Right Grant
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- 2012-10-10 JP JP2012224855A patent/JP5662402B2/ja active Active
-
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- 2015-11-18 JP JP2015225520A patent/JP2016028459A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006270053A (ja) * | 2005-02-28 | 2006-10-05 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
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KR101702673B1 (ko) * | 2008-10-07 | 2017-02-06 | 오스람 오엘이디 게엠베하 | 복사 방출 장치 |
JP2011222976A (ja) * | 2010-03-23 | 2011-11-04 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器、および照明装置 |
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TW200644719A (en) | 2006-12-16 |
JP5662402B2 (ja) | 2015-01-28 |
US7683536B2 (en) | 2010-03-23 |
KR20070114376A (ko) | 2007-12-03 |
WO2006105387A3 (en) | 2007-06-21 |
KR101255871B1 (ko) | 2013-04-17 |
CN101156257A (zh) | 2008-04-02 |
WO2006105387A2 (en) | 2006-10-05 |
JP5883548B2 (ja) | 2016-03-15 |
WO2006105387A8 (en) | 2007-11-22 |
CN101156257B (zh) | 2012-01-18 |
TWI452930B (zh) | 2014-09-11 |
JP2013048265A (ja) | 2013-03-07 |
EP1878068A2 (en) | 2008-01-16 |
EP1878068B1 (en) | 2013-11-13 |
JP2016028459A (ja) | 2016-02-25 |
US20060279204A1 (en) | 2006-12-14 |
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