JP2008527748T5 - - Google Patents

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Publication number
JP2008527748T5
JP2008527748T5 JP2007551472 JP2007551472T JP2008527748T5 JP 2008527748 T5 JP2008527748 T5 JP 2008527748T5 JP 2007551472 JP2007551472 JP 2007551472 JP 2007551472 T JP2007551472 T JP 2007551472T JP 2008527748 T5 JP2008527748 T5 JP 2008527748T5
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portion
susceptor
ald
substrate
sealing
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JP2007551472
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JP2008527748A5 (en
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Publication of JP2008527748A5 publication Critical patent/JP2008527748A5/ja
Publication of JP2008527748T5 publication Critical patent/JP2008527748T5/ja
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Claims (26)

  1. 堆積チャンバ内に画定された空間内において載置されたウエハに薄膜を堆積させるように構成され、 平上面を有するサセプタと、前記空間内連通するガス流入口を含み、前記堆積チャンバを通る流路を画定し、前記堆積チャンバを通る流路は前記サセプタの平上面に実質的に平行である、前記堆積チャンバと、 Is configured to deposit a thin film on the placed wafer in defined in the deposition chamber space, and the susceptor having a flat upper surface, seen including a gas inlet communicating with said space, said deposition chamber defining a flow path through the flow path through said deposition chamber is substantially parallel to the flat upper surface of the susceptor, and said deposition chamber,
    前記堆積チャンバのガス流入口にガスを送出するように構成されたガスシステムと、 A gas system configured to deliver the gas to the gas inlet of the deposition chamber,
    を備え、当該ガスシステムは、 Comprising a, the gas system,
    複数のガスの流れを混合するように構成された混合器と、 And configured mixer to mix the plurality of streams of gas,
    前記混合器と前記ガス流入口とに流体連通し、前記ガス流入口に入る前にガスを水平方向に拡散させるように形成された水平方向に末広形の一対の壁を含み、前記移送部材を通る流路を画定し、前記移送部材を通る流路は、前記堆積チャンバを通る流路に実質的に平行で、反対側にある、前記移送部材と、 The mixer and fluid communication with the gas inlet, seen including a pair of walls diverging shape in the horizontal direction and is formed so as to diffuse the gas in the horizontal direction before entering the gas inlet, the transfer member flow path defining a flow path, through the transfer member through the is substantially parallel to the flow path through said deposition chamber, on the opposite side, and the transfer member,
    を備え、前記混合器及び移送部材は前記堆積チャンバの上方に配置された、 Wherein the mixer and the transfer member is disposed above said deposition chamber,
    子層堆積(ALD)式薄膜堆積装置。 Atomic layer deposition (ALD) thin-film deposition apparatus.
  2. 前記移送部材は、第1の部分と、下流の第2の部分と、を含み、前記第1の部分は、第1の角度で末広形になった水平方向に末広形の一対の壁を含み、前記第2の部分は、前記第1の角度よりも大きい第2の角度で末広形になった、水平方向に末広形の一対の壁を含む請求項1に記載のALD式薄膜堆積装置。 It said transfer member includes a first portion, a second portion of the downstream, the said first portion includes a pair of walls diverging shape in the horizontal direction becomes divergent shape at a first angle , the second portion, the greater than the first angle reaches the second angle divergent form, ALD thin-film deposition apparatus of claim 1 including a pair of walls diverging shape in the horizontal direction.
  3. 前記水平方向に末広形の壁は、実質的にまっすぐである請求項1に記載のALD式薄膜堆積装置。 Walls diverging shape in the horizontal direction, ALD thin-film deposition apparatus according to claim 1 which is substantially straight.
  4. 前記水平方向に末広形の壁は、湾曲している請求項1に記載のALD式薄膜堆積装置。 Walls diverging shape in the horizontal direction, ALD thin-film deposition apparatus according to claim 1 which is curved.
  5. 前記移送部材により画定される前記ガス通路の第1の部分の高さは、実質的に一定である請求項2に記載のALD式薄膜堆積装置。 The height of the first portion of the gas passageway defined by the transfer member, ALD thin-film deposition apparatus according to claim 2 is substantially constant.
  6. 前記移送部材により画定される前記ガス通路の第2の部分の高さは、ガスの流れる方向に低くなる請求項2に記載のALD式薄膜堆積装置。 The height of the second portion of the gas passageway defined by the transfer member, ALD-type thin film deposition apparatus of claim 2, lower in the direction of gas flow.
  7. 前記移送部材を通る流路の第1の部分の高さは、実質的に一定である請求項6に記載のALD式薄膜堆積装置。 The height of the first portion of the flow path through the transfer member, ALD thin-film deposition apparatus according to claim 6 which is substantially constant.
  8. 前記堆積チャンバの前記ガス流入口は、前記移送部材と連通する縮小部分と、前記堆積チャンバ内の空間と連通する拡大部分と、前記縮小部分と拡大部分との間に位置する幅が狭くなった部分と、を含み、前記縮小部分は、前記移送部材から前記幅が狭くなった部分の方へ前記流路の断面積が狭くなるように形成され、前記拡大部分は、前記幅が狭くなった部分から前記堆積チャンバ内の空間の方へ前記流路の断面積が広くなるように形成される請求項1に記載のALD式薄膜堆積装置。 Said gas inlet of said deposition chamber comprises a reduced portion of said transfer member and communicating, the enlarged portion of the space communicating with the deposition chamber, the width positioned between the reduced portion and the enlarged portion is narrowed includes a moiety, wherein the reduced portion, the cross-sectional area of the flow path towards the the transfer member portion in which the width is narrowed is formed to be narrower, the enlarged portion, the width is narrowed ALD-type thin film deposition apparatus according to claim 1 which is formed as the cross-sectional area of the flow path towards the space of the deposition chamber from the portion becomes wider.
  9. 前記混合器と前記堆積チャンバとの間の前記ガス通路の断面積は、前記幅が狭くなった部分において最も狭くなる請求項に記載のALD式薄膜堆積装置。 The cross-sectional area of the gas passage between the mixer and the deposition chamber, ALD thin-film deposition apparatus according to narrowest claim 8 in a portion where the width is narrower.
  10. 前記堆積チャンバは、トッププレートと、ボトムプレートと、鉛直方向に移動して前記ボトムプレートに対して密閉を行うサセプタとを含み、また、前記ガス流入口は、前記トッププレートに形成される請求項に記載のALD式薄膜堆積装置。 The deposition chamber includes a top plate, includes a bottom plate and a susceptor for performing sealing against the bottom plate to move in the vertical direction, the gas flow inlet, the claims are formed on the top plate ALD-type thin film deposition apparatus according to 8.
  11. 前記堆積チャンバは、トッププレートと、ボトムプレートと、サセプタとを含み、当該サセプタは、第1の部分において前記ボトムプレートの下面に対して密閉を行うように前記ボトムプレートに対して鉛直方向に移動する構成となっている請求項1に記載のALD式薄膜堆積装置。 The deposition chamber is moved a top plate, a bottom plate, and a susceptor, said susceptor in a vertical direction with respect to the bottom plate so as to perform sealing with respect to the lower surface of the bottom plate in a first portion ALD-type thin film deposition apparatus according to claim 1 which has a configuration that.
  12. 堆積チャンバ内に画定された空間内に載置されたウエハ上に薄膜を堆積させるように構成され、前記空間と連通するガス流入口と、さらに、密閉面を含む密閉部とを備える、前記堆積チャンバと、 It is configured to deposit a thin film on a placed in the space defined within the deposition chamber a wafer, a gas inlet in communication with the space, further comprising a sealing portion including a sealing surface, said deposition and the chamber,
    前記ウエハを前記空間内において支持するように形成されたサセプタであって、前記サセプタが前記密閉面に対して密閉を行う第1の位置と、前記サセプタが前記密閉面に対して密閉を行わなくなる下方の第2の位置との間を、前記堆積チャンバに対して鉛直方向に移動するように形成された前記サセプタと、 Said wafer a formed on a susceptor to support in said space, a first position in which said susceptor performs sealed to said sealing surface, the susceptor is not made a seal against the sealing surface and a second position of the lower, and the susceptor that is formed to move in a vertical direction with respect to the deposition chamber,
    を備え、 Equipped with a,
    前記第1の位置において、前記密閉面と前記サセプタとの間の界面と、前記サセプタ上に配置された前記ウエハの上面との間の垂直方向の距離が、約2ミリメートル未満である原子層堆積(ALD)式薄膜堆積装置。 In the first position, the sealing surface and the interface between the susceptor, the vertical distance between the upper surface of the wafer disposed on the susceptor, atomic layer deposition is less than about 2 millimeters (ALD) thin-film deposition apparatus.
  13. 前記密閉面とサセプタとの間の界面と、前記サセプタ上に配置された前記ウエハとは、垂直方向において実質的に同じ高さに配置される請求項12に記載のALD式薄膜堆積装置。 Wherein the interface between the sealing surface and the susceptor, and placed the wafer on the susceptor, ALD-type thin film deposition apparatus of claim 12 in the vertical direction is located substantially at the same height.
  14. 前記基板と、前記密閉面と前記サセプタとの間の界面との間の前記サセプタの上面領域は、実質的に平坦である請求項12に記載のALD式薄膜堆積装置。 Said substrate, the top surface area of the susceptor between the interface between the susceptor and the sealing surface, ALD thin-film deposition apparatus according to claim 12 which is substantially flat.
  15. 前記堆積チャンバは、トッププレートと、ボトムプレートとを備え、前記ボトムプレートは、少なくとも部分的に、前記密閉部を形成し、また、前記トッププレートは、少なくとも部分的に、前記ガス流入口を形成する請求項12に記載のALD式薄膜堆積装置。 The deposition chamber includes a top plate, a bottom plate, the bottom plate, at least in part, to form the sealing portion, also, the top plate is at least partially forming said gas inlet ALD-type thin film deposition apparatus of claim 12,.
  16. 前記ウエハは前記サセプタ上に配置され 、前記ウエハの、ガスの流れに対して前の縁が、前記ウエハの後縁と比較して、前記密閉面から、より遠くに配置されるように、形成される請求項12に記載のALD式薄膜堆積装置。 The wafer is placed on the susceptor, the wafer, the front edge to the flow of gas, as compared to the trailing edge of the wafer, from the sealing surface, so as to be positioned farther, formed ALD-type thin film deposition apparatus according to claim 12 which is.
  17. 前記サセプタの直径は、前記ウエハの直径より約10%〜約25%大きい請求項12に記載のALD式薄膜堆積装置。 The diameter of the susceptor, ALD thin-film deposition apparatus according to the approximately 10% than the diameter of the wafer to about 25% greater claim 12.
  18. 半導体基板を処理するための基板支持部であって、当該基板支持部は、凹所を有する上面を含み、前記凹所は、前記基板支持部の上面が、前記基板の縁部分に沿ってのみ前記基板に接触するように形成される基板支持部。 A substrate support for processing a semiconductor substrate, the substrate supporting portion includes an upper surface having a recess, said recess, an upper surface of the substrate support portion, only along the edge portion of the substrate a substrate support portion formed to be in contact with the substrate.
  19. 前記凹所の深さは、約0.2から約0.5ミリメートルである請求項18に記載の基板支持部。 The depth of the recess, substrate support according to claim 18 of about 0.2 to about 0.5 millimeters.
  20. 前記凹所は、概ね円形である請求項18に記載の基板支持部。 The recess, substrate support according to claim 18 that is generally circular.
  21. 前記概ね円形の凹所の中心は、前記支持部の外側の縁に対してずらして配置される請求項20に記載の基板支持部。 It said generally central circular recess, substrate support according to claim 20 which is staggered with respect to the outer edge of the support portion.
  22. 前記支持部の上面と、前記基板とは、概ね円形の密閉部を形成する請求項18に記載の基板支持部。 Wherein the upper surface of the support portion, and said substrate is substantially substrate support according to claim 18 for forming a circular closure.
  23. 前記概ね円形の密閉部の中心は、前記支持部の外側の縁に対してずらして配置される請求項22に記載の基板支持部。 It said generally central circular sealing portion, substrate support according to claim 22 which is staggered with respect to the outer edge of the support portion.
  24. 前記サセプタの縁と前記凹所との間の前記サセプタの上面の領域は、実質的に平坦である請求項18に記載の基板支持部。 The area of the upper surface of the susceptor, the substrate supporting unit of claim 18 which is substantially flat between the edge and the recess of the susceptor.
  25. 前記上面の領域は、少なくとも1つのピンを含む請求項24に記載の基板支持部。 Area of the upper surface, the substrate supporting unit of claim 24 comprising at least one pin.
  26. 堆積チャンバ内に画定された空間内に載置されたウエハに薄膜を堆積させるように形成され、前記空間と連通するガス流入口と、さらに、密閉面を含む密閉部とを備える、前記堆積チャンバと、 It is formed so as to deposit a thin film on a wafer mounted on defined a space within the deposition chamber, wherein the gas inlet in communication with the space, further comprising a sealing portion including a sealing surface, said deposition chamber When,
    前記ウエハを前記空間内において支持するように形成されたサセプタであって、前記サセプタが前記密閉面に対して密閉を行う第1の位置と、前記サセプタが前記密閉面に対して密閉を行わなくなる下方の第2の位置との間を、前記堆積チャンバに対して鉛直方向に移動するように形成された前記サセプタと Said wafer a formed on a susceptor to support in said space, a first position in which said susceptor performs sealed to said sealing surface, the susceptor is not made a seal against the sealing surface and a second position of the lower, and the susceptor that is formed to move in a vertical direction with respect to the deposition chamber,
    記サセプタが前記第1の位置のとき、ガスの流れに対して前の縁が後の縁と比較して、前記密閉面から、より遠くに配置されるように、 前記サセプタ上に配置されたウエハと、 When pre-Symbol susceptor before Symbol first position, relative to the gas flow, as compared to the edge after the previous edge, from the sealing surface, so as to be disposed further away, on the susceptor and the wafer, which is located in,
    を備えた、原子層堆積(ALD)式薄膜堆積装置。 With a, atomic layer deposition (ALD) thin-film deposition apparatus.
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Cited By (30)

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US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9029253B2 (en) 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9177784B2 (en) 2012-05-07 2015-11-03 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus

Cited By (35)

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Publication number Priority date Publication date Assignee Title
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9340874B2 (en) 2011-11-23 2016-05-17 Asm Ip Holding B.V. Chamber sealing member
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9384987B2 (en) 2012-04-04 2016-07-05 Asm Ip Holding B.V. Metal oxide protective layer for a semiconductor device
US9029253B2 (en) 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US9177784B2 (en) 2012-05-07 2015-11-03 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US9299595B2 (en) 2012-06-27 2016-03-29 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9228259B2 (en) 2013-02-01 2016-01-05 Asm Ip Holding B.V. Method for treatment of deposition reactor
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9412564B2 (en) 2013-07-22 2016-08-09 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus

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