JP2008501603A - 珪素と当該珪素を製造する方法 - Google Patents
珪素と当該珪素を製造する方法 Download PDFInfo
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- JP2008501603A JP2008501603A JP2007513734A JP2007513734A JP2008501603A JP 2008501603 A JP2008501603 A JP 2008501603A JP 2007513734 A JP2007513734 A JP 2007513734A JP 2007513734 A JP2007513734 A JP 2007513734A JP 2008501603 A JP2008501603 A JP 2008501603A
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- Prior art keywords
- silicon
- powder
- producing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 71
- 239000010703 silicon Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 106
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000007906 compression Methods 0.000 claims description 18
- 230000006835 compression Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000000197 pyrolysis Methods 0.000 claims description 5
- 239000011856 silicon-based particle Substances 0.000 claims description 5
- 239000008246 gaseous mixture Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000007858 starting material Substances 0.000 abstract description 2
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 241000196324 Embryophyta Species 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 235000011437 Amygdalus communis Nutrition 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000220304 Prunus dulcis Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000020224 almond Nutrition 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010809 targeting technique Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
発明の付加的な特徴と詳細は以下に、二つの実施形態を参考にすることによって述べられる。
Poly silicone)と比較して広い表面範囲と好ましくない小さな体積/表面比にもかかわらず、良好な融解特性と高純度によって区別される。
Claims (11)
- 珪素塊あるいは珪素結晶を製造するための珪素溶融物を製造する原材料
として適した珪素製造方法にして、
a.珪素を含むガスと他の補助ガスとのガス状混合物を反応器へ導入するステップ、
b.珪素パウダーの生成を伴うガス状混合物を熱分解するステップ、
c.ガス状混合物から得られた珪素パウダーを分離するステップ、
d.分離された珪素パウダーを機械的圧縮するステップ
を有することを特徴とする珪素製造方法。 - 珪素を含むガスはモノシランであることを特徴とする請求項1に記載の方法。
- 補助ガスは水素であることを特徴とする請求項1又は2に記載の方法。
- 熱分解は管型反応器内で、管型反応器(2)あたり一時間に1kg以上の珪素パウダー空時収量でなされることを特徴とする請求項1〜3のいずれか一項に記載の方法。
- 反応器(2)は熱分解中に400℃以上の壁温度を有することを特徴とする請求項1〜4のいずれか一項に記載の方法。
- 機械的な圧縮は、少なくともローラージャケット(25)が非金属材料でできた圧縮ローラー(18、19)を用いてなされることを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 請求項1〜6のいずれか一項に記載の方法によって製造された珪素。
- 光起電産業用の多結晶質の珪素塊あるいは珪素単結晶を製造するために請求項7に記載の珪素を用いる方法。
- a.珪素粒子パウダー、及び/又は珪素粒子圧縮パウダーの形態で存在し、
b.100〜1500g/dm3の平均かさ密度をもち、
c.1500℃以上にならない温度で均一な珪素溶融物へ可溶である、
ことを特徴とする珪素。 - パウダーは全体で、珪素1cm3あたり1019以上の異物原子を含まないことを特徴とする珪素。
- 珪素粒子のパウダーは1〜50m2/gの表面範囲を有することを特徴とする請求項9又は10に記載の珪素。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004027563.7 | 2004-06-04 | ||
DE102004027563A DE102004027563A1 (de) | 2004-06-04 | 2004-06-04 | Silizium sowie Verfahren zu dessen Herstellung |
PCT/EP2005/005018 WO2005118474A1 (de) | 2004-06-04 | 2005-05-10 | Silizium sowie verfahren zu dessen herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008501603A true JP2008501603A (ja) | 2008-01-24 |
JP4848368B2 JP4848368B2 (ja) | 2011-12-28 |
Family
ID=34968688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007513734A Expired - Fee Related JP4848368B2 (ja) | 2004-06-04 | 2005-05-10 | 珪素と当該珪素を製造する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7758839B2 (ja) |
EP (1) | EP1758819B1 (ja) |
JP (1) | JP4848368B2 (ja) |
CN (1) | CN100594178C (ja) |
AT (1) | ATE438589T1 (ja) |
DE (2) | DE102004027563A1 (ja) |
ES (1) | ES2328377T3 (ja) |
WO (1) | WO2005118474A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008509071A (ja) * | 2004-08-10 | 2008-03-27 | ジョイント ソーラー シリコン ゲーエムベーハー ウント コンパニー カーゲー | ガス分解用反応装置の生産方法 |
JP2010536690A (ja) * | 2007-08-17 | 2010-12-02 | シランシル エイエス | シリコン粉末を圧縮するための装置及び方法 |
WO2020013072A1 (ja) * | 2018-07-11 | 2020-01-16 | 株式会社トクヤマ | シリコン微粒子の製造装置 |
JP2020019672A (ja) * | 2018-07-31 | 2020-02-06 | 株式会社トクヤマ | シリコン微粒子製造装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7658900B2 (en) | 2005-03-05 | 2010-02-09 | Joint Solar Silicon Gmbh & Co. Kg | Reactor and process for the preparation of silicon |
DE102007035757A1 (de) | 2007-07-27 | 2009-01-29 | Joint Solar Silicon Gmbh & Co. Kg | Verfahren und Reaktor zur Herstellung von Silizium |
DE102007050199A1 (de) * | 2007-10-20 | 2009-04-23 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus anorganischen Silanen |
DE102008044688B4 (de) * | 2008-07-01 | 2010-11-18 | Sunicon Ag | Kompaktierung von Silizium |
WO2010037694A2 (de) | 2008-09-30 | 2010-04-08 | Evonik Degussa Gmbh | Herstellung von solar-silicium aus siliciumdioxid |
DE102009016014B3 (de) * | 2009-04-02 | 2010-09-30 | Sunicon Ag | Verfahren zur Gewinnung von reinem Silizium |
CN101555012B (zh) * | 2009-05-08 | 2011-01-12 | 六九硅业有限公司 | 一种制备多晶硅的方法 |
DE102009035041B3 (de) * | 2009-07-28 | 2011-01-05 | Sunicon Ag | Anlage zur Herstellung von Silizium-Granulat |
DE102012218823A1 (de) | 2012-10-16 | 2014-04-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von hochreinem Siliziumnitrid |
DE102012218815A1 (de) | 2012-10-16 | 2014-04-17 | Evonik Industries Ag | Verfahren zur Reinigung von Phosphonsäure- bzw. Phosphonatgruppen enthaltenden Verbindungen |
CN104354321A (zh) * | 2014-11-11 | 2015-02-18 | 成都利君科技有限责任公司 | 一种压球机 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5111344B1 (ja) * | 1968-11-08 | 1976-04-10 | ||
JPS5767019A (en) * | 1980-10-13 | 1982-04-23 | Shin Etsu Handotai Co Ltd | Manufacture of pure silicon granule for manufacturing polycrystalline silicon by fluidized bed method |
US4354987A (en) * | 1981-03-31 | 1982-10-19 | Union Carbide Corporation | Consolidation of high purity silicon powder |
JPS58145611A (ja) * | 1982-02-23 | 1983-08-30 | Shin Etsu Chem Co Ltd | シリコン粒子の粉砕、篩別方法 |
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-
2004
- 2004-06-04 DE DE102004027563A patent/DE102004027563A1/de not_active Withdrawn
-
2005
- 2005-05-10 WO PCT/EP2005/005018 patent/WO2005118474A1/de not_active Application Discontinuation
- 2005-05-10 EP EP05745255A patent/EP1758819B1/de not_active Not-in-force
- 2005-05-10 CN CN200580017512A patent/CN100594178C/zh not_active Expired - Fee Related
- 2005-05-10 ES ES05745255T patent/ES2328377T3/es active Active
- 2005-05-10 US US11/569,774 patent/US7758839B2/en not_active Expired - Fee Related
- 2005-05-10 DE DE502005007853T patent/DE502005007853D1/de active Active
- 2005-05-10 AT AT05745255T patent/ATE438589T1/de not_active IP Right Cessation
- 2005-05-10 JP JP2007513734A patent/JP4848368B2/ja not_active Expired - Fee Related
Patent Citations (10)
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JPS5111344B1 (ja) * | 1968-11-08 | 1976-04-10 | ||
JPS5767019A (en) * | 1980-10-13 | 1982-04-23 | Shin Etsu Handotai Co Ltd | Manufacture of pure silicon granule for manufacturing polycrystalline silicon by fluidized bed method |
US4354987A (en) * | 1981-03-31 | 1982-10-19 | Union Carbide Corporation | Consolidation of high purity silicon powder |
JPS58145611A (ja) * | 1982-02-23 | 1983-08-30 | Shin Etsu Chem Co Ltd | シリコン粒子の粉砕、篩別方法 |
JPS5945918A (ja) * | 1982-07-26 | 1984-03-15 | ロ−ヌ−プ−ラン・スペシアリテ・シミ−ク | 密度の高い粉末状純けい素及びその製造方法 |
JPS605013A (ja) * | 1983-06-22 | 1985-01-11 | Denki Kagaku Kogyo Kk | シリコン粉末の製法及びその装置 |
JPS63129012A (ja) * | 1986-08-25 | 1988-06-01 | アルベマール・コーポレーシヨン | ポリシリコンの製造方法およびポリシリコン製品 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008509071A (ja) * | 2004-08-10 | 2008-03-27 | ジョイント ソーラー シリコン ゲーエムベーハー ウント コンパニー カーゲー | ガス分解用反応装置の生産方法 |
JP2010536690A (ja) * | 2007-08-17 | 2010-12-02 | シランシル エイエス | シリコン粉末を圧縮するための装置及び方法 |
WO2020013072A1 (ja) * | 2018-07-11 | 2020-01-16 | 株式会社トクヤマ | シリコン微粒子の製造装置 |
JP2020007196A (ja) * | 2018-07-11 | 2020-01-16 | 株式会社トクヤマ | シリコン微粒子の製造装置 |
JP2020019672A (ja) * | 2018-07-31 | 2020-02-06 | 株式会社トクヤマ | シリコン微粒子製造装置 |
WO2020026934A1 (ja) * | 2018-07-31 | 2020-02-06 | 株式会社トクヤマ | シリコン微粒子製造装置 |
JP7088774B2 (ja) | 2018-07-31 | 2022-06-21 | 株式会社トクヤマ | シリコン微粒子製造装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4848368B2 (ja) | 2011-12-28 |
CN100594178C (zh) | 2010-03-17 |
CN1960944A (zh) | 2007-05-09 |
EP1758819B1 (de) | 2009-08-05 |
DE502005007853D1 (de) | 2009-09-17 |
DE102004027563A1 (de) | 2005-12-22 |
ES2328377T3 (es) | 2009-11-12 |
US7758839B2 (en) | 2010-07-20 |
WO2005118474A1 (de) | 2005-12-15 |
US20080279748A1 (en) | 2008-11-13 |
EP1758819A1 (de) | 2007-03-07 |
ATE438589T1 (de) | 2009-08-15 |
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