JP2008310044A - Radiation-sensitive resin composition, interlayer insulation film and microlens and method for forming them - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition which, when used to form an interlayer insulation film under a baking condition of <250°C, can form an interlayer insulation film having high heat resistance, high solvent resistance, a high transmittance and a low dielectric constant, and which, when used to form microlenses, can form microlenses having a high transmittance and a good melt shape. <P>SOLUTION: The radiation-sensitive resin composition comprises [A] a polysiloxane having at least one group selected from the group consisting of an oxiranyl group and an oxetanyl group, and a functional group capable of addition reaction to an oxiranyl group or an oxetanyl group, and [B] a 1,2-quinonediazide compound. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a radiation-sensitive resin composition, an interlayer insulating film, a microlens, and a method for forming them.

In an electronic component such as a thin film transistor (hereinafter referred to as “TFT”) type liquid crystal display element, magnetic head element, integrated circuit element, solid-state imaging element, etc., an interlayer insulation is generally used to insulate between wirings arranged in layers. A membrane is provided. As a material for forming an interlayer insulating film, a material having a small number of steps for obtaining a required pattern shape and having sufficient flatness is preferable, and therefore, a radiation-sensitive resin composition is widely used (patent) Reference 1 and Patent Document 2).
Among the electronic components, for example, a TFT type liquid crystal display element is manufactured through a process of forming a transparent electrode film on the interlayer insulating film and further forming a liquid crystal alignment film on the interlayer insulating film. Since the film is exposed to a high temperature condition in the transparent electrode film forming process or exposed to a resist stripping solution used for forming an electrode pattern, sufficient resistance to these is required.
In recent years, TFT-type liquid crystal display elements tend to have larger screens, higher brightness, higher definition, faster response, thinner thickness, etc., and high sensitivity as a composition for forming an interlayer insulating film used therefor. Therefore, the interlayer insulating film to be formed is required to have higher performance than ever in terms of low dielectric constant and high transmittance.
As such an interlayer insulating film having a low dielectric constant and a high transmittance, a combination of an acrylic resin and a quinone diad (Patent Document 3) and a combination of a phenol resin and a quinone diazide (Patent Document 4) are known. However, these materials have problems such as outgassing due to a heating process after film formation and a decrease in transparency.
Furthermore, in the development process when forming an interlayer insulating film from a conventionally known radiation-sensitive resin composition, if the development time is slightly longer than the optimum time, the pattern may be peeled off.
As described above, in forming the interlayer insulating film from the radiation-sensitive resin composition, the composition is required to have high sensitivity, and the developing time in the developing process during the forming process becomes excessive beyond a predetermined time. Even in the case where the pattern does not peel off, it exhibits good adhesion, and the interlayer insulating film formed therefrom is required to have high heat resistance, high solvent resistance, low dielectric constant, high transmittance, etc. A radiation-sensitive resin composition that satisfies such requirements has not been known.

On the other hand, a microlens having a lens diameter of about 3 to 100 μm or an optical system material for an on-chip color filter such as a facsimile, an electronic copying machine, a solid-state image sensor, or the like is defined as an optical system material. An array of microlenses is used.
To form a microlens or microlens array, a resist pattern corresponding to the lens is formed and then melt-flowed by heat treatment and used as it is as a lens, or by using the melt-flowed lens pattern as a mask. A method of transferring a lens shape to a base by etching is known. For the formation of the lens pattern, a radiation-sensitive resin composition is widely used (see Patent Document 5 and Patent Document 6).
By the way, the element in which the microlens or the microlens array as described above is formed is then applied with a planarizing film and an etching resist film in order to remove various insulating films on the bonding pad which is a wiring forming portion. Exposure and development are performed using a desired mask to remove the etching resist in the bonding pad portion, and then the step is performed to remove the planarizing film and various insulating films by etching to expose the bonding pad portion. Therefore, the microlens or the microlens array requires solvent resistance and heat resistance in the flattening film and etching resist coating film forming process and the etching process.

The radiation-sensitive resin composition used to form such a microlens has high sensitivity, and the microlens formed therefrom has a desired radius of curvature, and has high heat resistance and high transmittance. The rate is required.
In addition, microlenses obtained from conventionally known radiation-sensitive resin compositions are developed between the pattern and the substrate if the development time is slightly longer than the optimum time in the development process when forming them. Since the liquid permeates and peels easily, it is necessary to strictly control the development time, which causes a problem in terms of product yield.
As described above, in forming the microlens from the radiation-sensitive resin composition, the composition is required to have high sensitivity, and the developing time in the developing process during the forming process is longer than a predetermined time. Even in this case, pattern peeling does not occur and good adhesion is exhibited, and a good melt shape (desired radius of curvature), high heat resistance, high solvent resistance, and high transmittance are required as a microlens. However, a radiation-sensitive resin composition that satisfies such requirements has not been known.
In addition, although a siloxane polymer is known as a material having high heat resistance, high transparency, and low dielectric constant, and it is also known to use this for an interlayer insulating film (Patent Document 7), siloxane is sufficiently crosslinked. Has a problem that high temperature baking at 250 to 300 ° C. or higher is necessary and cannot be applied to a process for producing a display element. Although attempts have been made to apply siloxane polymers to microlenses, no industrially successful examples have been known so far.
JP 2001-354822 A JP 2001-343743 A JP-A-2005-320542 JP 2003-255546 A JP-A-6-18702 JP-A-6-136239 JP 2006-178436 A

The present invention has been made based on the above situation. Therefore, an object of the present invention is to provide an interlayer insulating film having high heat resistance, high solvent resistance, high transmittance, and low dielectric constant when used for forming an interlayer insulating film under baking conditions of less than 250 ° C. The present invention provides a radiation-sensitive resin composition capable of forming a microlens having a high transmittance and a good melt shape when used for forming a microlens.
Another object of the present invention is a patterned thin film having high radiation sensitivity, having a development margin capable of forming a good pattern shape even in the development process exceeding the optimum development time, and having excellent adhesion. It is in providing the radiation sensitive composition which can form easily.
Still another object of the present invention is to provide a method for forming an interlayer insulating film and a microlens using the radiation sensitive resin composition.
Still another object of the present invention is to provide an interlayer insulating film and a microlens formed by the method of the present invention.
Still other objects and advantages of the present invention will become apparent from the following description.

According to the present invention, the above objects and advantages of the present invention are as follows.
[A] a polysiloxane having at least one group selected from the group consisting of an oxiranyl group and an oxetanyl group, and a functional group capable of undergoing an addition reaction with the oxiranyl group or the oxetanyl group, and [B] a 1,2-quinonediazide compound. This is achieved by the contained radiation sensitive resin composition.
The above objects and advantages of the present invention are secondly,
This is achieved by a method for forming an interlayer insulating film or microlens including the following steps in the order described below.
(1) A step of forming a film of the radiation sensitive resin composition on a substrate,
(2) a step of irradiating at least a part of the coating;
(3) A step of developing the coating after irradiation, and (4) a step of heating the coating after development.
Further, the above objects and advantages of the present invention are as follows.
This is achieved by the interlayer insulating film or microlens formed by the above method.

The radiation-sensitive resin composition of the present invention has good adhesion to a substrate even under firing conditions of less than 250 ° C., is excellent in solvent resistance and heat resistance, has high transmittance, and has a low dielectric constant. An insulating film can be formed.
In addition, the radiation-sensitive resin composition of the present invention has high radiation sensitivity, has a development margin that can form a good pattern shape even when the optimum development time is exceeded in the development process, and has good adhesion. It is possible to easily form a patterned thin film excellent in the above.
In addition, the microlens of the present invention formed from the above composition has good adhesion to the substrate, has excellent solvent resistance and heat resistance, and has a high transmittance and a good melt shape, It can be suitably used as a microlens for a solid-state imaging device.

Hereinafter, the radiation sensitive resin composition of this invention is explained in full detail.
[A] Component The [A] component used in the present invention is a polysiloxane having at least one group selected from the group consisting of an oxiranyl group and an oxetanyl group and a functional group capable of undergoing an addition reaction with the oxiranyl group or the oxetanyl group. It is.
Examples of the functional group capable of undergoing addition reaction with the oxiranyl group or oxetanyl group include a hydroxyl group, a mercapto group, and an amino group.
As the component [A] used in the present invention,
(A1) a silane compound having at least one group selected from the group consisting of an oxiranyl group and an oxetanyl group and a hydrolyzable group (hereinafter also referred to as “compound (a1)”);
(A2) a silane compound having a functional group capable of undergoing addition reaction with an oxiranyl group or oxetanyl group and a hydrolyzable group (hereinafter also referred to as “compound (a2)”), and (a3) (a1), (a2) Other hydrolyzable silane compounds (hereinafter also referred to as “compound (a3)”)
Is preferably a hydrolyzed condensate (hereinafter referred to as polysiloxane [A]).
The polysiloxane [A] preferably used in the present invention is preferably a structural unit derived from the compound (a1) based on the total of repeating units derived from the compounds (a1), (a2) and (a3). 5 to 70% by weight, particularly preferably 10 to 60% by weight. When a copolymer having a structural unit of less than 5% by weight is used, the heat resistance, surface hardness and peeling solution resistance of the interlayer insulating film and microlens obtained under firing conditions of less than 250 ° C. tend to be reduced. On the other hand, a copolymer exceeding 70% by weight tends to deteriorate the storage stability.

The compound (a1) is preferably the following formula (1)

(X ¹ Y ¹ ) _a SiR ¹ _b R ² _c (1)

(In the formula (1), ^{X 1} is oxiranyl group, a glycidyl group, glycidoxy group, 3,4-epoxy cyclohexyl group or a 3-oxetanyl group, provided that the 3-position carbon of the 3-oxetanyl group having 1 to 6 carbon atoms Y ¹ is a single bond, a methylene group or an alkylene group having 2 to 6 carbon atoms, and R ¹ is an alkoxyl group having 1 to 6 carbon atoms or an acyloxy group having 2 to 6 carbon atoms. R ² is an alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms, a and b are each independently an integer of 1 to 3, and c is an integer of 0 to 2. Yes, but a + b + c = 4)
It is a silane compound represented by these.
The alkyl group having 1 to 6 carbon atoms which may be substituted on the 3-position carbon of the 3-oxetanyl group of X ¹ in the above formula (1) is preferably an alkyl group having 1 to 3 carbon atoms, such as a methyl group, Examples thereof include an ethyl group and an n-propyl group. Y ¹ is preferably a methylene group or an alkylene group having 2 or 3 carbon atoms. Examples of the alkylene group having 2 or 3 carbon atoms of Y ¹ include an ethylene group and a trimethylene group. R ¹ is preferably an alkoxyl group having 1 to 3 carbon atoms or an acyloxy group having 2 to 4 carbon atoms, and examples thereof include a methoxyl group, an ethoxyl group, an n-propyloxy group, an i-propyloxy group, and an acetyl group. it can. R ² is preferably an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a phenyl group.

  Specific examples of the compound (a1) include silane compounds containing an oxiranyl group such as glycidoxymethyltrimethoxysilane, glycidoxymethyltriethoxysilane, glycidoxymethyltri-n-propyloxysilane, Sidoxymethyltri-i-propyloxysilane, glycidoxymethyltriacetoxysilane, glycidoxymethylmethyldimethoxysilane, glycidoxymethylmethyldiethoxysilane, glycidoxymethylmethyldi-n-propyloxysilane, glycidoxymethyl Cidoxymethylmethyldi-i-propyloxysilane, glycidoxymethylmethyldiacetoxysilane, glycidoxymethylethyldimethoxysilane, glycidoxymethylethyldiethoxysilane, glycidoxymethylethyldi-n-propyloxy Sisilane, glycidoxymethylethyl di-i-propyloxysilane, glycidoxymethylethyldiacetoxysilane, glycidoxymethylphenyldimethoxysilane, glycidoxymethylphenyldiethoxysilane, glycidoxymethylphenyldi-n- Propyloxysilane, glycidoxymethylphenyl di-i-propyloxysilane, glycidoxymethylphenyldiacetoxysilane, 2-glycidoxyethyltrimethoxysilane, 2-glycidoxyethyltriethoxysilane, 2-glycid Xylethyltri-n-propyloxysilane, 2-glycidoxyethyltri-i-propyloxysilane, 2-glycidoxyethyltriacetoxysilane, 2-glycidoxyethylmethyldimethoxysilane, 2-glycidoxyethyl Methyl Ethoxysilane, 2-glycidoxyethyl methyldi-n-propyloxysilane, 2-glycidoxyethylmethyldi-i-propyloxysilane, 2-glycidoxyethylmethyldiacetoxysilane, 2-glycidoxyethyl Ethyldimethoxysilane, 2-glycidoxyethylethyldiethoxysilane, 2-glycidoxyethylethyldi-n-propyloxysilane, 2-glycidoxyethylethyldi-i-propyloxysilane, 2-glycidoxy Ethylethyldiacetoxysilane, 2-glycidoxyethylphenyldimethoxysilane, 2-glycidoxyethylphenyldiethoxysilane, 2-glycidoxyethylphenyldi-n-propyloxysilane, 2-glycidoxyethylphenyldi -I-propyloxysilane, 2-glycidoxy Siethylphenyldiacetoxysilane,

3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropyltri-n-propyloxysilane, 3-glycidoxypropyltri-i-propyloxysilane, 3- Glycidoxypropyltriacetoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropylmethyldi-n-propyloxysilane, 3-glycidoxypropyl Methyldi-i-propyloxysilane, 3-glycidoxypropylmethyldiacetoxysilane, 3-glycidoxypropylethyldimethoxysilane, 3-glycidoxypropylethyldiethoxysilane, 3-glycidoxypropylethyldi- n-propyloxysilane 3-glycidoxypropylethyldi-i-propyloxysilane, 3-glycidoxypropylethyldiacetoxysilane, 3-glycidoxypropylphenyldimethoxysilane, 3-glycidoxypropylphenyldiethoxysilane, 3-glycidoxysilane Sidoxypropylphenyldi-n-propyloxysilane, 3-glycidoxypropylphenyldi-i-propyloxysilane, 3-glycidoxypropylphenyldiacetoxysilane, (3,4-epoxycyclohexyl) methyltrimethoxysilane (3,4-epoxycyclohexyl) methyltriethoxysilane, (3,4-epoxycyclohexyl) methyltri-n-propyloxysilane, (3,4-epoxycyclohexyl) methyltriacetoxysilane, (3,4-epoxycyclohexane) Xyl) methylmethyldimethoxysilane, (3,4-epoxycyclohexyl) methylmethyldiethoxysilane, (3,4-epoxycyclohexyl) methylmethyldi-n-propyloxysilane, (3,4-epoxycyclohexyl) methylmethyldiacetoxysilane (3,4-epoxycyclohexyl) methylethyldimethoxysilane, (3,4-epoxycyclohexyl) methylethyldiethoxysilane, (3,4-epoxycyclohexyl) methylethyldi-n-propyloxysilane, (3,4-epoxy (Cyclohexyl) methylethyldiacetoxysilane, (3,4-epoxycyclohexyl) methylphenyldimethoxysilane, (3,4-epoxycyclohexyl) methylphenyldiethoxysilane, (3,4-epoxysilane) Chloroyl) methylphenyldi-n-propyloxysilane, (3,4-epoxycyclohexyl) methylphenyldiacetoxysilane,

2- (3 ′, 4′-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethyltriethoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethyltri-n- Propyloxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethyltriacetoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethylmethyldimethoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) Ethylmethyldiethoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethylmethyldi-n-propyloxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethylmethyldiacetoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethylethyldimethoxysilane, 2- ( ', 4'-epoxycyclohexyl) ethylethyldiethoxysilane, 2- (3', 4'-epoxycyclohexyl) ethylethyldi-n-propyloxysilane, 2- (3 ', 4'-epoxycyclohexyl) ethylethyldiacetoxy Silane, 2- (3 ′, 4′-epoxycyclohexyl) ethylphenyldimethoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethylphenyldiethoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethyl Phenyldi-n-propyloxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethylphenyldiacetoxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propyltrimethoxysilane, 3- (3 ′, 4'-epoxycyclohexyl) propyltriethoxy Lan, 3- (3 ′, 4′-epoxycyclohexyl) propyltri-n-propyloxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propyltriacetoxysilane, 3- (3,4-epoxycyclohexyl) Propylmethyldimethoxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propylmethyldiethoxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propylmethyldi-n-propyloxysilane, 3- (3 ′ , 4′-epoxycyclohexyl) propylmethyldiacetoxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propylethyldimethoxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propylethyldiethoxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propyl ester Tildi-n-propyloxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propylethyldiacetoxysilane, 3- (3 ′, 4′-epoxycyclohexyl) propylphenyldimethoxysilane, 3- (3 ′, 4 '-Epoxycyclohexyl) propylphenyldiethoxysilane, 3- (3', 4'-epoxycyclohexyl) propylphenyldi-n-propyloxysilane, 3- (3 ', 4'-epoxycyclohexyl) propylphenyldiacetoxysilane Such;

Examples of silane compounds containing oxetanyl groups include (oxetane-3-yl) methyltrimethoxysilane, (oxetane-3-yl) methyltriethoxysilane, (oxetane-3-yl) methyltri-n-propyloxysilane, ( Oxetane-3-yl) methyltri-i-propyloxysilane, (oxetane-3-yl) methyltriacetoxysilane, (oxetane-3-yl) methylmethyldimethoxysilane, (oxetane-3-yl) methylmethyldiethoxysilane (Oxetane-3-yl) methylmethyldi-n-propyloxysilane, (oxetane-3-yl) methylmethyldi-i-propyloxysilane, (oxetane-3-yl) methylmethyldiacetoxysilane, (oxetane-3-yl) ) Methyl ethyl dimethyl Silane, (oxetane-3-yl) methylethyldiethoxysilane, (oxetane-3-yl) methylethyldi-n-propyloxysilane, (oxetane-3-yl) methylethyldi-i-propyloxysilane, (oxetane-3- Yl) methylethyldiacetoxysilane, (oxetane-3-yl) methylphenyldimethoxysilane, (oxetane-3-yl) methylphenyldiethoxysilane, (oxetane-3-yl) methylphenyldi-n-propyloxysilane, (Oxetane-3-yl) methylphenyldi-i-propyloxysilane, (oxetane-3-yl) methylphenyldiacetoxysilane, 2- (oxetane-3′-yl) ethyltrimethoxysilane, 2- (oxetane- 3'-yl) ethyltriethoxysila , (Oxetane-3-yl) ethyltri -n- propyl silane,

2- (oxetane-3′-yl) ethyltri-i-propyloxysilane, 2- (oxetane-3′-yl) ethyltriacetoxysilane, 2- (oxetane-3′-yl) ethylmethyldimethoxysilane, 2- (Oxetane-3′-yl) ethylmethyldiethoxysilane, 2- (oxetane-3′-yl) ethylmethyldi-n-propyloxysilane, 2- (oxetane-3′-yl) ethylmethyldi-i-propyloxysilane, 2- (oxetane-3′-yl) ethylmethyldiacetoxysilane, 2- (oxetane-3′-yl) ethylethyldimethoxysilane, 2- (oxetane-3′-yl) ethylethyldiethoxysilane, 2- ( Oxetane-3′-yl) ethylethyldi-n-propyloxysilane, 2- (oxetane-3 ′ Yl) ethyl ethyl di-i-propyloxysilane, 2- (oxetane-3'-yl) ethyl ethyl diacetoxy silane, 2- (oxetane-3'-yl) ethylphenyldimethoxysilane, 2- (oxetane-3'-yl) ) Ethylphenyldiethoxysilane, 2- (oxetane-3′-yl) ethylphenyldi-n-propyloxysilane, 2- (oxetane-3′-yl) ethylphenyldi-i-propyloxysilane, 2- ( Oxetane-3′-yl) ethylphenyldiacetoxysilane, 3- (oxetane-3′-yl) propyltrimethoxysilane, 3- (oxetane-3′-yl) propyltriethoxysilane, 3- (oxetane-3 ′ -Yl) propyltri-n-propyloxysilane, 3- (oxetane-3'-yl) propyl Pyrtri-i-propyloxysilane, 3- (oxetane-3′-yl) propyltriacetoxysilane, 3- (oxetane-3′-yl) propylmethyldimethoxysilane, 3- (oxetane-3′-yl) propylmethyl Diethoxysilane, 3- (oxetane-3′-yl) propylmethyldi-n-propyloxysilane, 3- (oxetane-3′-yl) propylmethyldi-i-propyloxysilane, 3- (oxetane-3 '-Yl) propylmethyldiacetoxysilane, 3- (oxetane-3'-yl) propylethyldimethoxysilane, 3- (oxetane-3'-yl) propylethyldiethoxysilane, 3- (oxetane-3'-yl ) Propylethyldi-n-propyloxysilane, 3- (oxetane-3′-yl) propi Ruethyldi-i-propyloxysilane, 3- (oxetane-3′-yl) propylethyldiacetoxysilane, 3- (oxetane-3′-yl) propylphenyldimethoxysilane, 3- (oxetane-3′-yl) propyl Phenyldiethoxysilane, 3- (oxetane-3′-yl) propylphenyldi-n-propyloxysilane, 3- (oxetane-3′-yl) propylphenyldi-i-propyloxysilane, 3- (oxetane- 3'-yl) propylphenyldiacetoxysilane,

(3-methyloxetane-3-yl) methyltrimethoxysilane, (3-methyloxetane-3-yl) methyltriethoxysilane, (3-methyloxetane-3-yl) methyltri-n-propyloxysilane, (3 -Methyloxetane-3-yl) methyltri-i-propyloxysilane, (3-methyloxetane-3-yl) methyltriacetoxysilane, (3-methyloxetane-3-yl) methylmethyldimethoxysilane, (3-methyl Oxetane-3-yl) methylmethyldiethoxysilane, (3-methyloxetane-3-yl) methylmethyldi-n-propyloxysilane, (3-methyloxetane-3-yl) methylmethyldi-i-propyloxysilane, (3 -Methyloxetane-3-yl) methylmethyldiacetoxy (3-methyloxetane-3-yl) methylethyldimethoxysilane, (3-methyloxetane-3-yl) methylethyldiethoxysilane, (3-methyloxetane-3-yl) methylethyldi-n-propyloxysilane (3-methyloxetane-3-yl) methylethyldi-i-propyloxysilane, (3-methyloxetane-3-yl) methylethyldiacetoxysilane, (3-methyloxetane-3-yl) methylphenyldimethoxysilane, (3-methyloxetane-3-yl) methylphenyldiethoxysilane, (3-methyloxetane-3-yl) methylphenyldi-n-propyloxysilane, (3-methyloxetane-3-yl) methylphenyldi- i-propyloxysilane, (3-methyloxetane-3 Yl) methyl phenyl diacetoxy silane,

2- (3′-methyloxetane-3′-yl) ethyltrimethoxysilane, 2- (3′-methyloxetane-3′-yl) ethyltriethoxysilane, 2- (3′-methyloxetane-3′- Yl) ethyltri-n-propyloxysilane, 2- (3′-methyloxetane-3′-yl) ethyltri-i-propyloxysilane, 2- (3′-methyloxetane-3′-yl) ethyltriacetoxysilane 2- (3′-methyloxetane-3′-yl) ethylmethyldimethoxysilane, 2- (3′-methyloxetane-3′-yl) ethylmethyldiethoxysilane, 2- (3′-methyloxetane-3) '-Yl) ethylmethyldi-n-propyloxysilane, 2- (3'-methyloxetane-3'-yl) ethylmethyldi-i-propyloxy Sisilane, 2- (3′-methyloxetane-3′-yl) ethylmethyldiacetoxysilane, 2- (3′-methyloxetane-3′-yl) ethylethyldimethoxysilane, 2- (3′-methyloxetane- 3'-yl) ethylethyldiethoxysilane, 2- (3'-methyloxetane-3'-yl) ethylethyldi-n-propyloxysilane, 2- (3'-methyloxetane-3'-yl) ethylethyldi-i -Propyloxysilane, 2- (3'-methyloxetane-3'-yl) ethylethyldiacetoxysilane, 2- (3'-methyloxetane-3'-yl) ethylphenyldimethoxysilane, 2- (3'- Methyloxetane-3′-yl) ethylphenyldiethoxysilane, 2- (3′-methyloxetane-3′-yl) ethyl Phenyldi-n-propyloxysilane, 2- (3′-methyloxetane-3′-yl) ethylphenyldi-i-propyloxysilane, 2- (3′-methyloxetane-3′-yl) ethylphenyldiacetoxy Silane, 3- (3′-methyloxetane-3′-yl) propyltrimethoxysilane, 3- (3′-methyloxetane-3′-yl) propyltriethoxysilane, 3- (3′-methyloxetane-3) '-Yl) propyltri-n-propyloxysilane, 3- (3'-methyloxetane-3'-yl) propyltri-i-propyloxysilane, 3- (3'-methyloxetane-3'-yl) Propyltriacetoxysilane, 3- (3′-methyloxetane-3′-yl) propylmethyldimethoxysilane, 3- (3′-methyl) Luoxetane-3′-yl) propylmethyldiethoxysilane, 3- (3′-methyloxetane-3′-yl) propylmethyldi-n-propyloxysilane, 3- (3′-methyloxetane-3′-yl) ) Propylmethyldi-i-propyloxysilane, 3- (3′-methyloxetane-3′-yl) propylmethyldiacetoxysilane, 3- (3′-methyloxetane-3′-yl) propylethyldimethoxysilane, 3- (3′-methyloxetane-3′-yl) propylethyldiethoxysilane, 3- (3′-methyloxetane-3′-yl) propylethyldi-n-propyloxysilane, 3- (3′- Methyloxetane-3′-yl) propylethyldi-i-propyloxysilane, 3- (3′-methyloxetane-3′-yl) Propylethyldiacetoxysilane, 3- (3′-methyloxetane-3′-yl) propylphenyldimethoxysilane, 3- (3′-methyloxetane-3′-yl) propylphenyldiethoxysilane, 3- (3 ′ -Methyloxetane-3'-yl) propylphenyldi-n-propyloxysilane, 3- (3'-methyloxetane-3'-yl) propylphenyldi-i-propyloxysilane, 3- (3'-methyl) Oxetane-3′-yl) propylphenyldiacetoxysilane, (3′-ethyloxetane-3′-yl) methyltrimethoxysilane,

(3-ethyloxetane-3-yl) methyltriethoxysilane, (3-ethyloxetane-3-yl) methyltri-n-propyloxysilane, (3-ethyloxetane-3-yl) methyltri-i-propyloxysilane (3-ethyloxetane-3-yl) methyltriacetoxysilane, (3-ethyloxetane-3-yl) methylmethyldimethoxysilane, (3-ethyloxetane-3-yl) methylmethyldiethoxysilane, (3- Ethyl oxetane-3-yl) methylmethyldi-n-propyloxysilane, (3-ethyloxetane-3-yl) methylmethyldi-i-propyloxysilane, (3-ethyloxetane-3-yl) methylmethyldiacetoxysilane, ( 3-ethyloxetane-3-yl) methylethyldimethoxy Silane, (3-ethyloxetane-3-yl) methylethyldiethoxysilane, (3-ethyloxetane-3-yl) methylethyldi-n-propyloxysilane, (3-ethyloxetane-3-yl) methylethyldi-i- Propyloxysilane, (3-ethyloxetane-3-yl) methylethyldiacetoxysilane, (3-ethyloxetane-3-yl) methylphenyldimethoxysilane, (3-ethyloxetane-3-yl) methylphenyldiethoxysilane (3-ethyloxetane-3-yl) methylphenyldi-n-propyloxysilane, (3-ethyloxetane-3-yl) methylphenyldi-i-propyloxysilane, (3-ethyloxetane-3-yl) ) Methylphenyldiacetoxysilane,

2- (3′-ethyloxetane-3′-yl) ethyltrimethoxysilane, 2- (3′-ethyloxetane-3′-yl) ethyltriethoxysilane, 2- (3′-ethyloxetane-3′-) Yl) ethyltri-n-propyloxysilane, 2- (3′-ethyloxetane-3′-yl) ethyltri-i-propyloxysilane, 2- (3′-ethyloxetane-3′-yl) ethyltriacetoxysilane 2- (3′-ethyloxetane-3′-yl) ethylmethyldimethoxysilane, 2- (3′-ethyloxetane-3′-yl) ethylmethyldiethoxysilane, 2- (3′-ethyloxetane-3) '-Yl) ethylmethyldi-n-propyloxysilane, 2- (3'-ethyloxetane-3'-yl) ethylmethyldi-i-propyloxy Sisilane, 2- (3′-ethyloxetane-3′-yl) ethylmethyldiacetoxysilane, 2- (3′-ethyloxetane-3′-yl) ethylethyldimethoxysilane, 2- (3′-ethyloxetane- 3'-yl) ethylethyldiethoxysilane, 2- (3'-ethyloxetane-3'-yl) ethylethyldi-n-propyloxysilane, 2- (3'-ethyloxetane-3'-yl) ethylethyldi-i -Propyloxysilane, 2- (3'-ethyloxetane-3'-yl) ethylethyldiacetoxysilane, 2- (3'-ethyloxetane-3'-yl) ethylphenyldimethoxysilane, 2- (3'- Ethyloxetane-3′-yl) ethylphenyldiethoxysilane, 2- (3′-ethyloxetane-3′-yl) ethyl Phenyldi-n-propyloxysilane, 2- (3′-ethyloxetane-3′-yl) ethylphenyldi-i-propyloxysilane, 2- (3′-ethyloxetane-3′-yl) ethylphenyldiacetoxy Silane,

3- (3′-ethyloxetane-3′-yl) propyltrimethoxysilane, 3- (3′-ethyloxetane-3′-yl) propyltriethoxysilane, 3- (3′-ethyloxetane-3′-) Yl) propyltri-n-propyloxysilane, 3- (3′-ethyloxetane-3′-yl) propyltri-i-propyloxysilane, 3- (3′-ethyloxetane-3′-yl) propyltri Acetoxysilane, 3- (3′-ethyloxetane-3′-yl) propylmethyldimethoxysilane, 3- (3′-ethyloxetane-3′-yl) propylmethyldiethoxysilane, 3- (3′-ethyloxetane) -3'-yl) propylmethyldi-n-propyloxysilane, 3- (3'-ethyloxetane-3'-yl) propylmethyl -I-propyloxysilane, 3- (3'-ethyloxetane-3'-yl) propylmethyldiacetoxysilane, 3- (3'-ethyloxetane-3'-yl) propylethyldimethoxysilane, 3- (3 '-Ethyloxetane-3'-yl) propylethyldiethoxysilane, 3- (3'-ethyloxetane-3'-yl) propylethyldi-n-propyloxysilane, 3- (3'-ethyloxetane-3) '-Yl) propylethyldi-i-propyloxysilane, 3- (3'-ethyloxetane-3'-yl) propylethyldiacetoxysilane, 3- (3'-ethyloxetane-3'-yl) propylphenyl Dimethoxysilane, 3- (3′-ethyloxetane-3′-yl) propylphenyldiethoxysilane, 3- (3′- Tyloxetane-3′-yl) propylphenyldi-n-propyloxysilane, 3- (3′-ethyloxetane-3′-yl) propylphenyldi-i-propyloxysilane, 3- (3′-ethyloxetane) -3'-yl) propylphenyldiacetoxysilane and the like.

  Of these, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3 ′, 4′-epoxycyclohexyl) ethyltrimethoxysilane 2- (3 ′, 4′-epoxycyclohexyl) ethyltriethoxysilane, 3- (3′-ethyloxetane-3′-yl) propyltrimethoxysilane or 3- (3′-ethyloxetane-3′-yl) ) Propyltriethoxysilane is preferably used from the viewpoint of increasing the sensitivity of the radiation sensitive resin composition, widening the development margin, and improving heat resistance. These compounds (a1) are used alone or in combination.

The polysiloxane [A] preferably used in the present invention is preferably a structural unit derived from the compound (a2) based on the total of repeating units derived from the compounds (a1), (a2) and (a3). 5 to 70% by weight, particularly preferably 10 to 60% by weight. When a copolymer having a structural unit of less than 5% by weight is used, the heat resistance, surface hardness and peeling solution resistance of the interlayer insulating film and microlens obtained under firing conditions of less than 250 ° C. tend to be reduced. On the other hand, a copolymer exceeding 70% by weight tends to decrease the remaining film ratio after development or deteriorate storage stability.
Examples of the functional group capable of undergoing addition reaction with the oxiranyl group or oxetanyl group in the compound (a2) include a hydroxyl group, a mercapto group, and an amino group. This amino group is preferably a primary amino group or a secondary amino group. Examples of the hydrolyzable group include an alkoxyl group, an acyloxy group, and an alkoxyalkoxyl group. It is preferable that the alkoxyl group has 1 to 6 carbon atoms, the acyloxy group has 2 to 6 carbon atoms, and the alkoxyalkoxyl group has 2 to 8 carbon atoms.
Compound (a2) is preferably represented by the following formula (2)

(X ² Y ² ) _d SiR ³ _e R ⁴ _f (2)

(In the formula (2), X ² is a hydroxyl group, a hydroxyphenyl group, a hydroxyphenylcarbonyloxy group, a mercapto group or an amino group, and Y ² is a single bond, a methylene group, an alkylene group having 2 to 6 carbon atoms, or the following formula: (2-1)

^{-Y 3 -Z-Y 4 - (} 2-1)

(In Formula (2-1), Y ³ is a methylene group, an alkylene group having 2 to 6 carbon atoms, or an arylene group having 6 to 12 carbon atoms, and Y ⁴ is a single bond, a methylene group, or an alkyl group having 2 to 6 carbon atoms. an alkylene group, Z is a sulfur atom or a hydroxymethylene group, provided that the left of the formula (2-1) is bonded to the group X ^2.)
R ³ is an alkoxyl group having 1 to 6 carbon atoms, an acyloxy group having 2 to 6 carbon atoms, or an alkoxyalkoxyl group having 2 to 8 carbon atoms, and R ⁴ is 1 carbon atom. An alkyl group of ˜6 or an aryl group of 6 to 12 carbon atoms, d and e are each independently an integer of 1 to 3, and f is an integer of 0 to 2, provided that d + e + f = 4. )
It is a silane compound represented by these.

As the hydroxyphenyl group of X ² in the above formula (2), a 4-hydroxyphenyl group is preferable, and as the hydroxyphenylcarbonyloxy group, a p-hydroxyphenylcarbonyloxy group is preferable. The amino group of X ² can be a primary amino group or a secondary amino group, such as a primary amino group, an N-phenylamino group, an N-2- (aminoethyl) amino group, and the like. Can be mentioned. Y ² is preferably a methylene group or an alkylene group having 2 or 3 carbon atoms. Examples of the alkylene group having 2 or 3 carbon atoms of Y ² include an ethylene group and a trimethylene group. R ³ is preferably an alkoxyl group having 1 to 3 carbon atoms, an acyloxy group having 2 to 4 carbon atoms, or an alkoxyalkoxyl group having 2 to 6 carbon atoms. For example, methoxyl group, ethoxyl group, n-propyloxy group, i-propyl An oxy group, an acetyl group, a methoxyethoxyl group, etc. can be mentioned. R ⁴ is preferably an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a phenyl group.

  Specific examples of the compound (a2) include hydroxymethyltrimethoxysilane, hydroxymethyltriethoxysilane, hydroxymethyltri-n-propyloxysilane, and hydroxymethyltri-i-propyloxysilane as silane compounds containing a hydroxyl group. , Hydroxymethyltriacetoxysilane, hydroxymethyltri (methoxyethoxy) silane, hydroxymethylmethyldimethoxysilane, hydroxymethylmethyldiethoxysilane, hydroxymethylmethyldi-n-propyloxysilane, hydroxymethylmethyldi-i-propyloxysilane Hydroxymethylmethyldiacetoxysilane, hydroxymethylethyldimethoxysilane, hydroxymethylethyldiethoxysilane, hydroxymethylethyldi-n-propyl Pyroxysilane, hydroxymethylethyldi-i-propyloxysilane, hydroxymethylethyldiacetoxysilane, hydroxymethylethyldi (methoxyethoxy) silane, hydroxymethylphenyldimethoxysilane, hydroxymethylphenyldiethoxysilane, hydroxymethylphenyldi- n-propyloxysilane, hydroxymethylphenyldi-i-propyloxysilane, hydroxymethylphenyldiacetoxysilane, hydroxymethylphenyldi (methoxyethoxy) silane, 2-hydroxyethyltrimethoxysilane, 2-hydroxyethyltriethoxysilane, 2-hydroxyethyltri-n-propyloxysilane, 2-hydroxyethyltri-i-propyloxysilane, 2-hydroxyethyltria Toxisilane, 2-hydroxyethyltri (methoxyethoxy) silane, 2-hydroxyethylmethyldimethoxysilane, 2-hydroxyethylmethyldiethoxysilane, 2-hydroxyethylmethyldi-n-propyloxysilane, 2-hydroxyethylmethyldi- i-propyloxysilane, 2-hydroxyethylmethyldiacetoxysilane, 2-hydroxyethylethyldimethoxysilane, 2-hydroxyethylethyldiethoxysilane, 2-hydroxyethylethyldi-n-propyloxysilane, 2-hydroxyethylethyl Di-i-propyloxysilane, 2-hydroxyethylethyldiacetoxysilane, 2-hydroxyethylethyldi (methoxyethoxy) silane, 2-hydroxyethylphenyldimethoxysilane, 2-hydroxy Droxyethylphenyldiethoxysilane, 2-hydroxyethylphenyldi-n-propyloxysilane, 2-hydroxyethylphenyldi-i-propyloxysilane, 2-hydroxyethylphenyldiacetoxysilane, 2-hydroxyethylphenyldi ( Methoxyethoxy) silane,

3-hydroxypropyltrimethoxysilane, 3-hydroxypropyltriethoxysilane, 3-hydroxypropyltri-n-propyloxysilane, 3-hydroxypropyltri-i-propyloxysilane, 3-hydroxypropyltriacetoxysilane, 3- Hydroxypropyltri (methoxyethoxy) silane, 3-hydroxypropylmethyldimethoxysilane, 3-hydroxypropylmethyldiethoxysilane, 3-hydroxypropylmethyldi-n-propyloxysilane, 3-hydroxypropylmethyldi-i-propyloxy Silane, 3-hydroxypropylmethyldiacetoxysilane, 3-hydroxypropylethyldimethoxysilane, 3-hydroxypropylethyldiethoxysilane, 3-hydroxypropylethyl -N-propyloxysilane, 3-hydroxypropylethyldi-i-propyloxysilane, 3-hydroxypropylethyldiacetoxysilane, 3-hydroxypropylethyldi (methoxyethoxy) silane, 3-hydroxypropylphenyldimethoxysilane, 3 -Hydroxypropylphenyldiethoxysilane, 3-hydroxypropylphenyldi-n-propyloxysilane, 3-hydroxypropylphenyldi-i-propyloxysilane, 3-hydroxypropylphenyldiacetoxysilane, 3-hydroxypropylphenyldi ( Methoxyethoxy) silane,

4-hydroxyphenyltrimethoxysilane, 4-hydroxyphenyltriethoxysilane, 4-hydroxyphenyltri-n-propyloxysilane, 4-hydroxyphenyltri-i-propyloxysilane, 4-hydroxyphenyltriacetoxysilane, 4- Hydroxyphenyltri (methoxyethoxy) silane, 4-hydroxyphenylmethyldimethoxysilane, 4-hydroxyphenylmethyldiethoxysilane, 4-hydroxyphenylmethyldi-n-propyloxysilane, 4-hydroxyphenylmethyldi-i-propyloxy Silane, 4-hydroxyphenylmethyldiacetoxysilane, 4-hydroxyphenylethyldimethoxysilane, 4-hydroxyphenylethyldiethoxysilane, 4-hydroxyphenylethyl -N-propyloxysilane, 4-hydroxyphenylethyldi-i-propyloxysilane, 4-hydroxyphenylethyldiacetoxysilane, 4-hydroxyphenylethyldi (methoxyethoxy) silane, 4-hydroxyphenylphenyldimethoxysilane, 4 -Hydroxyphenylphenyldiethoxysilane, 4-hydroxyphenylphenyldi-n-propyloxysilane, 4-hydroxyphenylphenyldi-i-propyloxysilane, 4-hydroxyphenylphenyldiacetoxysilane, 4-hydroxyphenylphenyldi ( Methoxyethoxy) silane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentyltrimethoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) P) Pentillytriethoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentyltri-n-propyloxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentyltri-i-propyloxysilane 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentyltriacetoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentyltri (methoxyethoxy) silane, 4-hydroxy-5- (p- Hydroxyphenylcarbonyloxy) pentylmethyldimethoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylmethyldiethoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarb) Bonyloxy) pentylmethyldi-n-propyloxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylmethyldi-i-propyloxysilane,

4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylmethyldiacetoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylethyldimethoxysilane, 4-hydroxy-5- (p-hydroxyphenyl) Carbonyloxy) pentylethyldiethoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylethyldi-n-propyloxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylethyldi -I-propyloxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylethyldiacetoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylethyl Di (methoxyethoxy) silane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylphenyldimethoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylphenyldiethoxysilane, 4-hydroxy- 5- (p-hydroxyphenylcarbonyloxy) pentylphenyldi-n-propyloxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylphenyldi-i-propyloxysilane, 4-hydroxy-5 (P-hydroxyphenylcarbonyloxy) pentylphenyldiacetoxysilane, 4-hydroxy-5- (p-hydroxyphenylcarbonyloxy) pentylphenyldi (methoxyethoxy) silane, the following formula (a2-1)

^{HO-Y 3 -S-Y 4} -Si (OR) 3 (a2-1)

(In Formula (2a-1), Y ³ and Y ⁴ have the same meaning as in Formula (2-1) above, and R is independently an alkyl group having 1 to 6 carbon atoms or 2 to 6 carbon atoms. An acyl group.)
A compound represented by:

Examples of silane compounds containing a mercapto group include mercaptomethyltrimethoxysilane, mercaptomethyltriethoxysilane, mercaptomethyltri-n-propyloxysilane, mercaptomethyltri-i-propyloxysilane, mercaptomethyltriacetoxysilane, mercaptomethyl Tri (methoxyethoxy) silane, mercaptomethylmethyldimethoxysilane, mercaptomethylmethyldiethoxysilane, mercaptomethylmethyldi-n-propyloxysilane, mercaptomethylmethyldi-i-propyloxysilane, mercaptomethylmethyldiacetoxysilane, mercapto Methylethyldimethoxysilane, mercaptomethylethyldiethoxysilane, mercaptomethylethyldi-n-propyloxysilane, merca Tomethylethyldi-i-propyloxysilane, mercaptomethylethyldiacetoxysilane, mercaptomethylethyldi (methoxyethoxy) silane, mercaptomethylphenyldimethoxysilane, mercaptomethylphenyldiethoxysilane, mercaptomethylphenyldi-n-propyloxysilane, mercapto Methylphenyldi-i-propyloxysilane, mercaptomethylphenyldiacetoxysilane, mercaptomethylphenyldi (methoxyethoxy) silane, 2-mercaptoethyltrimethoxysilane, 2-mercaptoethyltriethoxysilane, 2-mercaptoethyltri-n -Propyloxysilane, 2-mercaptoethyltri-i-propyloxysilane, 2-mercaptoethyltriacetoxysilane, 2-merca Toethyltri (methoxyethoxy) silane, 2-mercaptoethylmethyldimethoxysilane, 2-mercaptoethylmethyldiethoxysilane, 2-mercaptoethylmethyldi-n-propyloxysilane, 2-mercaptoethylmethyldi-i-propyloxysilane, 2-mercaptoethylmethyldiacetoxysilane, 2-mercaptoethylethyldimethoxysilane, 2-mercaptoethylethyldiethoxysilane, 2-mercaptoethylethyldi-n-propyloxysilane, 2-mercaptoethylethyldi-i-propyloxy Silane, 2-mercaptoethylethylacetoxysilane, 2-mercaptoethylethyldi (methoxyethoxy) silane, 2-mercaptoethylphenyldimethoxysilane, 2-mercaptoethylphenyldie Toxisilane, 2-mercaptoethylphenyldi-n-propyloxysilane, 2-mercaptoethylphenyldi-i-propyloxysilane, 2-mercaptoethylphenyldiacetoxysilane, 2-mercaptoethylphenyldi (methoxyethoxy) silane,

3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropyltri-n-propyloxysilane, 3-mercaptopropyltri-i-propyloxysilane, 3-mercaptopropyltriacetoxysilane, 3- Mercaptopropyltri (methoxyethoxy) silane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropylmethyldiethoxysilane, 3-mercaptopropylmethyldi-n-propyloxysilane, 3-mercaptopropylmethyldi-i-propyloxy Silane, 3-mercaptopropylmethyldiacetoxysilane, 3-mercaptopropylethyldimethoxysilane, 3-mercaptopropylethyldiethoxysilane, 3-mercaptopropylethyl -N-propyloxysilane, 3-mercaptopropylethyldi-i-propyloxysilane, 3-mercaptopropylethyldiacetoxysilane, 3-mercaptopropylethyldi (methoxyethoxy) silane, 3-mercaptopropylphenyldimethoxysilane, 3 -Mercaptopropylphenyldiethoxysilane, 3-mercaptopropylphenyldi-n-propyloxysilane, 3-mercaptopropylphenyldi-i-propyloxysilane, 3-mercaptopropylphenyldiacetoxysilane, 3-mercaptopropylphenyldi ( Methoxyethoxy) silane and the like;

Examples of silane compounds containing amino groups include aminomethyltrimethoxysilane, aminomethyltriethoxysilane, aminomethyltri-n-propyloxysilane, aminomethyltri-i-propyloxysilane, aminomethyltriacetoxysilane, and aminomethyl. Tri (methoxyethoxy) silane, aminomethylmethyldimethoxysilane, aminomethylmethyldiethoxysilane, aminomethylmethyldi-n-propyloxysilane, aminomethylmethyldi-i-propyloxysilane, aminomethylmethyldiacetoxysilane, amino Methylethyldimethoxysilane, aminomethylethyldiethoxysilane, aminomethylethyldi-n-propyloxysilane, aminomethylethyldi-i-propyloxysilane, aminomethylethyl Acetoxysilane, aminomethylethyldi (methoxyethoxy) silane, aminomethylphenyldimethoxysilane, aminomethylphenyldiethoxysilane, aminomethylphenyldi-n-propyloxysilane, aminomethylphenyldi-i-propyloxysilane, aminomethyl Phenyldiacetoxysilane, aminomethylphenyldi (methoxyethoxy) silane, 2-aminoethyltrimethoxysilane, 2-aminoethyltriethoxysilane, 2-aminoethyltri-n-propyloxysilane, 2-aminoethyltri-i -Propyloxysilane, 2-aminoethyltriacetoxysilane, 2-aminoethyltri (methoxyethoxy) silane, 2-aminoethylmethyldimethoxysilane, 2-aminoethylmethyldiethoxysilane 2-aminoethylmethyldi-n-propyloxysilane, 2-aminoethylmethyldi-i-propyloxysilane, 2-aminoethylmethyldiacetoxysilane, 2-aminoethylethyldimethoxysilane, 2-aminoethylethyldiethoxy Silane, 2-aminoethylethyldi-n-propyloxysilane, 2-aminoethylethyldi-i-propyloxysilane, 2-aminoethylethyldiacetoxysilane, 2-aminoethylethyldi (methoxyethoxy) silane, 2 -Aminoethylphenyldimethoxysilane, 2-aminoethylphenyldiethoxysilane, 2-aminoethylphenyldi-n-propyloxysilane, 2-aminoethylphenyldi-i-propyloxysilane, 2-aminoethylphenyldiacetoxysilane , 2-A Minoethylphenyldi (methoxyethoxy) silane,

3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltri-n-propyloxysilane, 3-aminopropyltri-i-propyloxysilane, 3-aminopropyltriacetoxysilane, 3- Aminopropyltri (methoxyethoxy) silane, 3-aminopropylmethyldimethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-aminopropylmethyldi-n-propyloxysilane, 3-aminopropylmethyldi-i-propyloxy Silane, 3-aminopropylmethyldiacetoxysilane, 3-aminopropylethyldimethoxysilane, 3-aminopropylethyldiethoxysilane, 3-aminopropylethyldi-n-propyloxysilane, 3-aminopropylethyldi i-propyloxysilane, 3-aminopropylethyldiacetoxysilane, 3-aminopropylethyldi (methoxyethoxy) silane, 3-aminopropylphenyldimethoxysilane, 3-aminopropylphenyldiethoxysilane, 3-aminopropylphenyldi -N-propyloxysilane, 3-aminopropylphenyldi-i-propyloxysilane, 3-aminopropylphenyldiacetoxysilane, 3-aminopropylphenyldi (methoxyethoxy) silane,

N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (aminoethyl) -3-aminopropyltriethoxysilane, N-2- (aminoethyl) -3-aminopropyltri-n -Propyloxysilane, N-2- (aminoethyl) -3-aminopropyltri-i-propyloxysilane, N-2- (aminoethyl) -3-aminopropyltriacetoxysilane, N-2- (aminoethyl) ) -3-Aminopropyltri (methoxyethoxy) silane, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropylmethyldiethoxysilane, N- 2- (aminoethyl) -3-aminopropylmethyldi-n-propyloxysilane, N-2- (aminoethyl) -3 Aminopropylmethyldi-i-propyloxysilane, N-2- (aminoethyl) -3-aminopropylmethyldiacetoxysilane, N-2- (aminoethyl) -3-aminopropylethyldimethoxysilane, N-2- (Aminoethyl) -3-aminopropylethyldiethoxysilane, N-2- (aminoethyl) -3-aminopropylethyldi-n-propyloxysilane, N-2- (aminoethyl) -3-aminopropylethyl Di-i-propyloxysilane, N-2- (aminoethyl) -3-aminopropylethyldiacetoxysilane, N-2- (aminoethyl) -3-aminopropylethyldi (methoxyethoxy) silane, N-2 -(Aminoethyl) -3-aminopropylphenyldimethoxysilane, N-2- (aminoethyl) -3 Aminopropylphenyldiethoxysilane, N-2- (aminoethyl) -3-aminopropylphenyldi-n-propyloxysilane, N-2- (aminoethyl) -3-aminopropylphenyldi-i-propyloxysilane N-2- (aminoethyl) -3-aminopropylphenyldiacetoxysilane, N-2- (aminoethyl) -3-aminopropylphenyldi (methoxyethoxy) silane,

N-phenyl-3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltri-n-propyloxysilane, N-phenyl-3-aminopropyltri- i-propyloxysilane, N-phenyl-3-aminopropyltriacetoxysilane, N-phenyl-3-aminopropyltri (methoxyethoxy) silane, N-phenyl-3-aminopropylmethyldimethoxysilane, N-phenyl-3 -Aminopropylmethyldiethoxysilane, N-phenyl-3-aminopropylmethyldi-n-propyloxysilane, N-phenyl-3-aminopropylmethyldi-i-propyloxysilane, N-phenyl-3-aminopropyl Methyldiacetoxysilane, N-pheny -3-aminopropylethyldimethoxysilane, N-phenyl-3-aminopropylethyldiethoxysilane, N-phenyl-3-aminopropylethyldi-n-propyloxysilane, N-phenyl-3-aminopropylethyldi- i-propyloxysilane, N-phenyl-3-aminopropylethyldiacetoxysilane, N-phenyl-3-aminopropylethyldi (methoxyethoxy) silane, N-phenyl-3-aminopropylphenyldimethoxysilane, N-phenyl -3-aminopropylphenyldiethoxysilane, N-phenyl-3-aminopropylphenyldi-n-propyloxysilane, N-phenyl-3-aminopropylphenyldi-i-propyloxysilane, N-phenyl-3- Aminopropylphenyl diace Kishishiran, N- phenyl-3-aminopropyl-phenyl di (methoxyethoxy) silane, etc., can be exemplified respectively.

  Among these, hydroxymethyltrimethoxysilane, hydroxyethyltrimethoxysilane, trimethoxysilylpropyl-1- (4′-hydroxyphenyl) propylthioether, trimethoxysilylpropyl-1- (2′-hydroxyphenyl) propylthioether, Trimethoxysilylpropyl-2- (4′-hydroxyphenyl) propyl thioether, trimethoxysilylpropyl-2- (2′-hydroxyphenyl) propyl thioether, trimethoxysilylethyl- (4′-hydroxyphenyl) thioether, trimethoxy Silylpropyl- (4′-hydroxyphenyl) thioether, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane or aminomethyltrimethoxysilane Emissions is, the heat resistance of the resulting interlayer insulating film, or microlens, transparency, can be suitably used from the viewpoint of stripping solution resistance.

The polysiloxane [A] preferably used in the present invention is preferably a structural unit derived from the compound (a3) based on the sum of repeating units derived from the compounds (a1), (a2) and (a3). 10 to 90% by weight, particularly preferably 20 to 80% by weight. When this structural unit is less than 10% by weight, the storage stability of the radiation-sensitive resin composition tends to be reduced. On the other hand, when the amount of this structural unit exceeds 90% by weight, the resulting interlayer insulating film or The heat resistance, surface hardness, and stripping solution resistance of the microlens may be insufficient.
Compound (a3) is preferably represented by the following formula (3)

SiR ⁵ _g R ⁶ _h (3)

(In Formula (3), R ⁵ is an alkoxyl group having 1 to 6 carbon atoms or an aryloxy group having 6 to 18 carbon atoms, provided that part or all of the hydrogen atoms of the aryloxy group are halogen atoms, cyano groups, R ⁶ may be substituted by a nitro group or an alkyl group having 1 to 6 carbon atoms, and R ⁶ is an alkyl group having 1 to ⁶ carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an aryl group having 6 to 18 carbon atoms, or A (meth) acryloxy group, wherein some or all of the hydrogen atoms of the aryl group may be substituted with a halogen atom, a cyano group, a nitro group, or an alkyl group having 1 to 6 carbon atoms, and (meth) acryloxy The group may be bonded via a methylene group or an alkylene group having 2 to 6 carbon atoms, g is an integer of 1 to 4, h is an integer of 0 to 3, provided that g + h = 4. .)
It is a silane compound represented by these.

R ⁵ in the above formula (3) is preferably an alkoxyl group having 1 to 4 carbon atoms or an aryloxy group having 6 to 12 carbon atoms, such as a methoxyl group, an ethoxyl group, an n-propyloxy group, or an i-propyloxy group. Phenoxy group, naphthyloxy group, 4-chlorophenoxy group, 4-cyanophenoxy group, 4-nitrophenoxy group, 4-toluyloxy group and the like. R ⁶ is an alkyl group having 1 to 3 carbon atoms, an alkenyl group having 2 to 4 carbon atoms, an aryl group having 6 to 12 carbon atoms, or a direct bond or a methylene group or an alkylene group having 2 to 3 carbon atoms. The (meth) acryloxy group is preferable, and specific examples thereof include, for example, a methyl group, an ethyl group, a phenyl group, a 4-chlorophenyl group, a 4-cyanophenyl group, a 4-nitrophenyl group, a 4-toluyl group, and a naphthyl group. , Vinyl group, allyl group, (meth) acryloxy group, (meth) acryloxymethyl group, 2- (meth) acryloxyethyl group, 3- (meth) acryloxypropyl group, and the like.

Specific examples of the compound (a3) include tetraalkoxysilanes such as tetramethoxysilane, tetraethoxysilane, tetra-n-propyloxysilane, tetraisopropyloxysilane, and tetra-n-butoxysilane; methyltrimethoxysilane, methyl Monoalkyltrialkoxysilanes such as triethoxysilane, methyltri-n-propyloxysilane, ethyltriethoxysilane, cyclohexyltriethoxysilane;
Monoaryltrialkoxysilanes such as phenyltriethoxysilane, naphthyltriethoxysilane, 4-chlorophenyltriethoxysilane, 4-cyanophenyltriethoxysilane, 4-nitrophenyltriethoxysilane, 4-methylphenyltriethoxysilane;
Monoaryloxy such as phenoxytriethoxysilane, naphthyloxytriethoxysilane, 4-chlorophenyloxytriethoxysilane, 4-cyanophenyltrioxyethoxysilane, 4-nitrophenyloxytriethoxysilane, 4-methylphenyloxytriethoxysilane Trialkoxysilane;
Dialkyl dialkoxysilanes such as dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldi-n-propyloxysilane, methyl (ethyl) diethoxysilane, methyl (cyclohexyl) diethoxysilane;
Monoalkylmonoaryl dialkoxysilanes such as methyl (phenyl) diethoxysilane; diaryldialkoxysilanes such as diphenyldiethoxysilane;
Diaryloxy dialkoxysilanes such as diphenoxydiethoxysilane;
Monoalkyl monoaryloxy dialkoxysilanes such as methyl (phenoxy) diethoxysilane;
Monoarylmonoaryloxydialkoxysilanes such as phenyl (phenoxy) diethoxysilane;

Trialkylmonoalkoxysilanes such as trimethylethoxysilane, trimethyl-n-propyloxysilane, dimethyl (ethyl) ethoxysilane, dimethyl (cyclohexyl) ethoxysilane;
Dialkyl monoaryl monoalkoxysilanes such as dimethyl (phenyl) ethoxysilane;
Monoalkyldiarylmonoalkoxysilanes such as methyl (diphenyl) ethoxysilane;
Triaryloxymonoalkoxysilanes such as triphenoxyethoxysilane;
Monoalkyldiaryloxymonoalkoxysilanes such as methyl (diphenoxy) ethoxysilane; monoaryldiaryloxymonoalkoxysilanes such as phenyl (diphenoxy) ethoxysilane;
Dialkylmonoaryloxymonoalkoxysilanes such as dimethyl (phenoxy) ethoxysilane;
Diarylmonoaryloxymonoalkoxysilanes such as diphenyl (phenoxy) ethoxysilane;
Monoalkylmonoarylmonoaryloxymonoalkoxysilanes such as methyl (phenyl) (phenoxy) ethoxysilane;
Vinyltrimethoxysilane, vinyltriethoxysilane, vinyltri-n-propyloxysilane, vinyltri-i-propyloxysilane, vinyltriacetoxysilane, vinyltri (methoxyethoxy) silane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, vinylmethyldi -N-propyloxysilane, vinylmethyldi-i-propyloxysilane, vinylmethyldiacetoxysilane, vinylethyldimethoxysilane, vinylethyldiethoxysilane, vinylethyldi-n-propyloxysilane, vinylethyldi-i-propyloxysilane, vinylethyl Diacetoxysilane, vinylethyldi (methoxyethoxy) silane, vinylphenyldimethoxysilane, vinylphenyldiethoxysilane, vinylphenyl -n- propyl silane, vinyl phenyl di -i- propyl silane, vinyl phenyl diacetoxy silane, vinyl group-containing alkoxysilane such as vinyl phenyl di (methoxyethoxy) silane;

Allyltrimethoxysilane, allyltriethoxysilane, allyltri-n-propyloxysilane, allyltri-i-propyloxysilane, allyltriacetoxysilane, allyltri (methoxyethoxy) silane, allylmethyldimethoxysilane, allylmethyldiethoxysilane, allylmethyldi -N-propyloxysilane, allylmethyldi-i-propyloxysilane, allylmethyldiacetoxysilane, allylethyldimethoxysilane, allylethyldiethoxysilane, allylethyldi-n-propyloxysilane, allylethyldi-i-propyloxysilane, allylethyl Diacetoxysilane, allylethyldi (methoxyethoxy) silane, allylphenyldimethoxysilane, allylphenyldiethoxysilane, allylphenyl -n- propyl silane, allyl phenyl di -i- propyl silane, allyl phenyl diacetoxy silane, such as an allyl group-containing silane allyl phenyl di (methoxyethoxy) silane;
(Meth) acryloxymethyltrimethoxysilane, (meth) acryloxymethyltriethoxysilane, (meth) acryloxymethyltri-n-propyloxysilane, (meth) acryloxymethyltri-i-propyloxysilane, (meta ) Acryloxymethyltriacetoxysilane, (meth) acryloxymethylmethyldimethoxysilane, (meth) acryloxymethylmethyldiethoxysilane, (meth) acryloxymethylmethyldi-n-propyloxysilane, (meth) acryloxymethyl Methyldi-i-propyloxysilane, (meth) acryloxymethylmethyldiacetoxysilane, (meth) acryloxymethylethyldimethoxysilane, (meth) acryloxymethylethyldiethoxysilane, (meth) acryloxymethylethyldi n-propyloxysilane, (meth) acryloxymethylethyldi-i-propyloxysilane, (meth) acryloxymethylethyldiacetoxysilane, (meth) acryloxymethylphenyldimethoxysilane, (meth) acryloxymethylphenyldi Ethoxysilane, (meth) acryloxymethylphenyldi-n-propyloxysilane, (meth) acryloxymethylphenyldi-i-propyloxysilane, (meth) acryloxymethylphenyldiacetoxysilane,

2- (meth) acryloxyethyltrimethoxysilane, 2- (meth) acryloxyethyltriethoxysilane, 2- (meth) acryloxyethyltri-n-propyloxysilane, 2- (meth) acryloxyethyltri- i-propyloxysilane, 2- (meth) acryloxyethyltriacetoxysilane, 3- (meth) acryloxyethylmethyldimethoxysilane, 2- (meth) acryloxyethylmethyldiethoxysilane, 2- (meth) acryloxy Ethylmethyldi-n-propyloxysilane, 3- (meth) acryloxypropyltrimethoxysilane, 3- (meth) acryloxypropyltriethoxysilane, 3- (meth) acryloxypropyltri-n-propyloxysilane, 3- (Meth) acryloxypropyltri-i-propi Oxysilane, 3- (meth) acryloxypropyltriacetoxysilane, 3- (meth) acryloxypropylmethyldimethoxysilane, 3- (meth) acryloxypropylmethyldiethoxysilane, 3- (meth) acryloxypropylmethyldi- n-propyloxysilane, 3- (meth) acryloxypropylmethyldi-i-propyloxysilane, 3- (meth) acryloxypropylmethyldiacetoxysilane, 3- (meth) acryloxypropylethyldimethoxysilane, 3- (Meth) acryloxypropylethyldiethoxysilane, 3- (meth) acryloxypropylethyldi-n-propyloxysilane, 3- (meth) acryloxypropylethyldi-i-propyloxysilane, 3- (meth) Acryloxypropylethyldia Toxisilane, 3- (meth) acryloxypropylphenyldimethoxysilane, 3- (meth) acryloxypropylphenyldiethoxysilane, 3- (meth) acryloxypropylphenyldi-n-propyloxysilane, 3- (meth) acryl Examples include (meth) acryl group-containing silanes such as loxypropylphenyldi-i-propyloxysilane and 3- (meth) acryloxypropylphenyldiacetoxysilane.

Of these compounds (a3), tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane, diphenyl Diethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, 3- (meth) acryloxypropyltrimethoxysilane or 3- (meth) acryloxypropyltriethoxysilane react It can be preferably used from the viewpoints of heat resistance, transparency of the interlayer insulating film or microlens obtained, transparency, and resistance to stripping solution.
Specific examples of polysiloxane [A] preferably used in the present invention include, for example, 3-glycidoxypropyltrimethoxysilane / 2-hydroxyethyltrimethoxysilane / dimethyldimethoxysilane cocondensate, 2- (3 ′, 4 '-Epoxycyclohexyl) ethyltrimethoxysilane / 3-mercaptopropyltrimethoxysilane / phenyltrimethoxysilane cocondensate or 3- (3'-ethyloxetane-3'-yl) propyltrimethoxysilane / trimethoxysilylpropyl- Mention may be made of 2- (4′-hydroxyphenyl) propylthioether / methyltrimethoxysilane cocondensate.

The polysiloxane [A] preferably used in the present invention is obtained by hydrolyzing and condensing the compounds (a1), (a2) and (a3) as described above, preferably in a solvent, preferably in the presence of a catalyst. Can be synthesized.
Examples of the solvent that can be used for the synthesis of polysiloxane [A] include alcohol, ether, glycol ether, ethylene glycol monoalkyl ether acetate, diethylene glycol, diethylene glycol monoalkyl ether acetate, propylene glycol monoalkyl ether, propylene glycol alkyl ether. Acetates, propylene glycol alkyl ether propionates, aromatic hydrocarbons, ketones, esters and the like can be mentioned.
Specific examples thereof include alcohols such as methanol, ethanol, benzyl alcohol, 2-phenylethyl alcohol, and 3-phenyl-1-propanol;
Tetrahydrofuran as ether;
Examples of glycol ethers include ethylene glycol monomethyl ether and ethylene glycol monoethyl ether;
Examples of ethylene glycol monoalkyl ether acetate include methyl cellosolve acetate, ethyl cellosolve acetate, ethylene glycol monobutyl ether acetate, and ethylene glycol monoethyl ether acetate;
Examples of diethylene glycol include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and diethylene glycol ethyl methyl ether.
Examples of diethylene glycol monoalkyl ether acetate include diethylene glycol monoethyl ether acetate;

Examples of propylene glycol monoalkyl ethers include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether;
As propylene glycol monoalkyl ether propionate, for example, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, propylene glycol monopropyl ether propionate, propylene glycol monobutyl ether propionate, etc .;
As propylene glycol monoalkyl ether acetate, for example, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate and the like;
Aromatic hydrocarbons such as toluene, xylene, etc .;
Examples of ketones include methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, and the like;

Examples of esters include methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, hydroxy Ethyl acetate, hydroxybutyl acetate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate, 2-hydroxy -3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxy acetate, ethyl ethoxy acetate, propyl ethoxy acetate, butyl ethoxy acetate, propoxy Methyl acetate, ethyl propoxyacetate, propyl propoxyacetate, butyl propoxyacetate, methyl butoxyacetate, ethyl butoxyacetate, propyl butoxyacetate, butylbutoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropionic acid Propyl, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate Propyl 2-butoxypropionate, butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, 3-methoxypropyl Butyl pionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, 3-propoxypropionate Examples thereof include propyl acid, butyl 3-propoxypropionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, butyl 3-butoxypropionate, and the like.

Of these solvents, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether or propylene glycol alkyl ether acetate are preferred, and in particular, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol methyl. Ether acetate or methyl 3-methoxypropionate is preferred. The amount of the solvent used is preferably such that the total amount of the compounds (a1), (a2) and (a3) in the reaction solution is 10 to 50% by weight, and 15 to 40% by weight. More preferably.
The hydrolysis and condensation reaction for synthesizing polysiloxane [A] is preferably an acid catalyst (for example, hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, acetic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, acidic ion exchange resin, Various Lewis acids, etc.) or base catalysts (eg, ammonia, primary amines, secondary amines, tertiary amines, nitrogen-containing aromatic compounds such as pyridine; basic ion exchange resins; hydroxides such as sodium hydroxide) Carbonates such as potassium carbonate; carboxylates such as sodium acetate; various Lewis bases, etc.). The amount of the catalyst to be used is preferably 0.2 mol or less, more preferably 0.00001 to 0.1 mol, relative to 1 mol in total of the compounds (a1), (a2) and (a3).
The amount of water used, the reaction temperature and the reaction time are appropriately set. For example, the following conditions can be adopted.
The amount of water used is preferably 0.1 to 3 with respect to 1 mol of the total amount of the group R ^{1 in} the compound (a1), the group R ³ in the compound (a2) and the group R ^{5 in} the compound (a3). Mol, more preferably 0.3 to 2 mol, still more preferably 0.5 to 1.5 mol.
The reaction temperature is preferably 40 to 200 ° C, more preferably 50 to 150 ° C.
The reaction time is preferably 30 minutes to 24 hours, more preferably 1 to 12 hours.
The compounds (a1), (a2) and (a3) and water may be added at once to carry out the hydrolysis and condensation reaction in one step, or the compounds (a1), (a2) and (a3) and water may be added. The hydrolysis and condensation reaction may be performed in multiple stages by adding them stepwise.

The weight average molecular weight (hereinafter referred to as “Mw”) of the [A] component used in the present invention is preferably 5 × 10 ^{2 to} 5 × 10 ⁴ , more preferably 1 × 10 ^{3 to} 3 × 10 ⁴ . is there. If the Mw is less than 5 × 10 ² , the development margin may not be sufficient, and the remaining film ratio of the obtained film may decrease, or the pattern shape of the obtained interlayer insulating film or microlens, heat resistance, etc. On the other hand, if it exceeds 5 × 10 ⁴ , the sensitivity may be lowered or the pattern shape may be inferior. The radiation-sensitive resin composition containing the [A] component as described above can easily form a predetermined pattern shape without causing development residue during development.

[B] Component The [B] component used in the present invention is a 1,2-quinonediazide compound that generates a carboxylic acid upon irradiation with radiation, and is a phenolic compound or an alcoholic compound (hereinafter referred to as “mother nucleus having a hydroxyl group”). Or a condensate of a mother nucleus having an amino group and 1,2-naphthoquinonediazide sulfonic acid halide.
Examples of the mother nucleus having a hydroxyl group include trihydroxybenzophenone, tetrahydroxybenzophenone, pentahydroxybenzophenone, hexahydroxybenzophenone, (polyhydroxyphenyl) alkane, and other mother nucleus having a hydroxyl group.
Specific examples thereof include trihydroxybenzophenone such as 2,3,4-trihydroxybenzophenone and 2,4,6-trihydroxybenzophenone;
As tetrahydroxybenzophenone, 2,2 ′, 4,4′-tetrahydroxybenzophenone, 2,3,4,3′-tetrahydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone, 2,3,4 2,2'-tetrahydroxy-4'-methylbenzophenone, 2,3,4,4'-tetrahydroxy-3'-methoxybenzophenone, etc .;
Examples of pentahydroxybenzophenone include 2,3,4,2 ′, 6′-pentahydroxybenzophenone;
Examples of hexahydroxybenzophenone include 2,4,6,3 ′, 4 ′, 5′-hexahydroxybenzophenone, 3,4,5,3 ′, 4 ′, 5′-hexahydroxybenzophenone and the like;

Examples of (polyhydroxyphenyl) alkanes include bis (2,4-dihydroxyphenyl) methane, bis (p-hydroxyphenyl) methane, tri (p-hydroxyphenyl) methane, and 1,1,1-tri (p-hydroxyphenyl). ) Ethane, bis (2,3,4-trihydroxyphenyl) methane, 2,2-bis (2,3,4-trihydroxyphenyl) propane, 1,1,3-tris (2,5-dimethyl-4) -Hydroxyphenyl) -3-phenylpropane, 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol, bis (2,5-dimethyl- 4-hydroxyphenyl) -2-hydroxyphenylmethane, 3,3,3 ′, 3′-tetramethyl-1,1′-spirobiindene-5 6,7,5 ′, 6 ′, 7′-hexanol, 2,2,4-trimethyl-7,2 ′, 4′-trihydroxyflavan and the like;
Examples of other mother nucleus having a hydroxyl group include 2-methyl-2- (2,4-dihydroxyphenyl) -4- (4-hydroxyphenyl) -7-hydroxychroman, 2- [bis {(5-isopropyl-4 -Hydroxy-2-methyl) phenyl} methyl], 1- [1- (3- {1- (4-hydroxyphenyl) -1-methylethyl} -4,6-dihydroxyphenyl) -1-methylethyl]- 3- (1- (3- {1- (4-hydroxyphenyl) -1-methylethyl} -4,6-dihydroxyphenyl) -1-methylethyl) benzene, 4,6-bis {1- (4- And hydroxyphenyl) -1-methylethyl} -1,3-dihydroxybenzene.
Examples of the mother nucleus having an amino group include compounds in which the hydroxyl group of the mother nucleus having the hydroxyl group is substituted with an amino group.
Among these mother nuclei, 2,3,4,4′-tetrahydroxybenzophenone, 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] Bisphenol is preferred.

The 1,2-naphthoquinone diazide sulfonic acid halide is preferably 1,2-naphthoquinone diazide sulfonic acid chloride, and specific examples thereof include 1,2-naphthoquinone diazide-4-sulfonic acid chloride and 1,2-naphthoquinone diazide- 5-sulfonic acid chloride can be mentioned, and among these, 1,2-naphthoquinonediazide-5-sulfonic acid chloride is preferably used.
In the condensation reaction, 1 corresponds to preferably 30 to 85 mol%, more preferably 50 to 70 mol%, based on the number of hydroxyl groups in the phenolic compound or alcoholic compound or the number of amino groups in the mother nucleus having an amino group. , 2-Naphthoquinonediazide sulfonic acid halide can be used.
The condensation reaction can be carried out by a known method.
These [B] components can be used alone or in combination of two or more.
[B] The usage-amount of a component becomes like this. Preferably it is 1-25 weight part with respect to 100 weight part of [A] component, More preferably, it is 5-20 weight part. When this ratio is less than 1 part by weight, the difference in solubility between the irradiated portion and the unirradiated portion in the alkaline aqueous solution that is the developer is small, and patterning may be difficult. Alternatively, the heat resistance and solvent resistance of the microlens may be insufficient. On the other hand, when this ratio exceeds 25 parts by weight, the solubility in the alkaline aqueous solution may be insufficient at the radiation-irradiated portion, and development may be difficult.
In addition, it is known that the light transmittance of the cured film obtained by adding a 1,2-quinonediazide compound is impaired. In a composition for forming an interlayer insulating film or microlens using a conventionally known acrylic resin or phenol resin, a desired radiation sensitivity cannot be obtained unless a large amount of this 1,2-quinonediazide compound is added. There was a limit in improving the light transmittance of the resulting cured film. However, since the radiation-sensitive resin composition of the present invention can achieve high radiation sensitivity with a smaller amount of [B] 1,2-quinonediazide compound as compared with the conventional one as described above, a cured film having high light transmittance. Can be formed with high radiation sensitivity. The amount of the [B] 1,2-quinonediazide compound used in the radiation sensitive resin composition of the present invention can be further 15 parts by weight or less with respect to 100 parts by weight of the component [A].

Other Components The radiation-sensitive resin composition of the present invention contains the above-mentioned [A] component and [B] component as essential components, but if necessary, [C] a thermosensitive acid generating compound, [D] A polymerizable compound having at least one ethylenically unsaturated double bond, [E] epoxy resin, [F] surfactant, [G] adhesion aid and the like can be contained.
[C] The heat-sensitive acid generating compound can be used to improve heat resistance and hardness. Specific examples thereof include onium salts such as sulfonium salts, benzothiazonium salts, ammonium salts, and phosphonium salts.
Specific examples of the sulfonium salt include alkylsulfonium salts, benzylsulfonium salts, dibenzylsulfonium salts, substituted benzylsulfonium salts and the like.
Specific examples thereof include alkylsulfonium salts such as 4-acetophenyldimethylsulfonium hexafluoroantimonate, 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, dimethyl-4- (benzyloxycarbonyloxy) phenylsulfonium hexafluoroantimony. Dimethyl-4- (benzoyloxy) phenylsulfonium hexafluoroantimonate, dimethyl-4- (benzoyloxy) phenylsulfonium hexafluoroarsenate, dimethyl-3-chloro-4-acetoxyphenylsulfonium hexafluoroantimonate, etc .;

Examples of benzylsulfonium salts include benzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-4-hydroxyphenylmethylsulfonium hexafluorophosphate, 4-acetoxyphenylbenzylmethylsulfonium hexafluoroantimonate, benzyl-4-methoxyphenylmethyl. Sulfonium hexafluoroantimonate, benzyl-2-methyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-3-chloro-4-hydroxyphenylmethylsulfonium hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenylmethyl Sulfonium hexafluorophosphate, etc .;
Examples of dibenzylsulfonium salts include dibenzyl-4-hydroxyphenylsulfonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylsulfonium hexafluorophosphate, 4-acetoxyphenyl dibenzylsulfonium hexafluoroantimonate, dibenzyl-4-methoxyphenylsulfonium hexa Fluoroantimonate, dibenzyl-3-chloro-4-hydroxyphenylsulfonium hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5-tert-butylphenylsulfonium hexafluoroantimonate, benzyl-4-methoxybenzyl-4 -Hydroxyphenylsulfonium hexafluorophosphate and the like;
Examples of substituted benzylsulfonium salts include p-chlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, p-nitrobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, and p-chlorobenzyl-4-hydroxyphenylmethylsulfonium. Hexafluorophosphate, p-nitrobenzyl-3-methyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 3,5-dichlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, o-chlorobenzyl-3-chloro Examples include -4-hydroxyphenylmethylsulfonium hexafluoroantimonate.

Specific examples of the benzothiazonium salt include, for example, 3-benzylbenzothiazonium hexafluoroantimonate, 3-benzylbenzothiazonium hexafluorophosphate, 3-benzylbenzothiazonium tetrafluoroborate, 3- ( p-methoxybenzyl) benzothiazonium hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazonium hexafluoroantimonate, 3-benzyl-5-chlorobenzothiazonium hexafluoroantimonate, etc. it can.
Of these, sulfonium salts and benzothiazonium salts are preferably used, particularly 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, benzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 4-acetoxyphenylbenzylmethylsulfonium hexanium. Fluoroantimonate, dibenzyl-4-hydroxyphenylsulfonium hexafluoroantimonate, 4-acetoxyphenylbenzylsulfonium hexafluoroantimonate or 3-benzylbenzothiazolium hexafluoroantimonate are preferably used.
Examples of these commercially available products include Sun-Aid SI-L85, SI-L110, SI-L145, SI-L150, SI-L160 (manufactured by Sanshin Chemical Industry Co., Ltd.).
[C] The use ratio of the thermosensitive acid-generating compound is preferably 20 parts by weight or less, more preferably 5 parts by weight or less with respect to 100 parts by weight of the component [A]. When the amount used exceeds 20 parts by weight, precipitates may be deposited in the coating film forming step, which may hinder the coating film formation.

Examples of the above-mentioned [D] polymerizable compound having at least one ethylenically unsaturated double bond (hereinafter sometimes referred to as “[D] component”) include monofunctional (meth) acrylate and bifunctional (meta) ) Acrylate or tri- or higher functional (meth) acrylate can be preferably mentioned.
Examples of the monofunctional (meth) acrylate include 2-hydroxyethyl (meth) acrylate, carbitol (meth) acrylate, isobornyl (meth) acrylate, 3-methoxybutyl (meth) acrylate, and 2- (meth) acryloyloxyethyl. And 2-hydroxypropyl phthalate. As these commercial products, for example, Aronix M-101, M-111, M-114 (above, manufactured by Toagosei Co., Ltd.), KAYARAD TC-110S, TC-120S (above, Nippon Kayaku Co., Ltd.) ) Co., Ltd.), Biscoat 158, 2311 (above, manufactured by Osaka Organic Chemical Industry Co., Ltd.).
Examples of the bifunctional (meth) acrylate include ethylene glycol (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, polypropylene glycol di (meth) acrylate, Examples include tetraethylene glycol di (meth) acrylate, bisphenoxyethanol full orange acrylate, and bisphenoxyethanol full orange acrylate. As these commercial products, for example, Aronix M-210, M-240, M-6200 (above, manufactured by Toagosei Co., Ltd.), KAYARAD HDDA, HX-220, R-604 (above, Nippon Kayaku) Medicine Co., Ltd.), Viscoat 260, 312 and 335HP (above, Osaka Organic Chemical Industries, Ltd.).

Examples of the trifunctional or higher functional (meth) acrylate include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, tri ((meth) acryloyloxyethyl) phosphate, and pentaerythritol tetra (meth) acrylate. , Dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate and the like, and as commercially available products thereof, for example, Aronix M-309, M-400, M-405, M-450, M-7100, M-8030, M-8060 (above, manufactured by Toagosei Co., Ltd.), KAYARAD TMPTA, DPHA, DPCA-20, DPCA-30, DPCA-60, DPCA-120 (Nippon Kayaku Co., Ltd.), screw Over DOO 295, the 300, the 360, the GPT, said 3PA, the 400 (manufactured by Osaka Organic Chemical Industry Ltd.) and the like.
Of these, trifunctional or higher functional (meth) acrylates are preferably used, and among them, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol hexa (meth) acrylate are particularly preferable.
These monofunctional, bifunctional, or trifunctional or higher (meth) acrylates are used alone or in combination. The proportion of component [D] used is preferably 50 parts by weight or less, more preferably 30 parts by weight or less with respect to 100 parts by weight of component [A].
By including the component [D] at such a ratio, the heat resistance, surface hardness, etc. of the interlayer insulating film or microlens obtained from the radiation-sensitive resin composition of the present invention can be improved. When the amount used exceeds 50 parts by weight, film roughening may occur in the step of forming a film of the radiation sensitive resin composition on the substrate.

The [E] epoxy resin is not limited as long as the compatibility is not affected. Preferably, bisphenol A type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, cyclic aliphatic epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, heterocyclic epoxy resin, glycidyl methacrylate ) Polymerized resins and the like can be mentioned. Of these, bisphenol A type epoxy resins, cresol novolac type epoxy resins, glycidyl ester type epoxy resins and the like are particularly preferable.
[E] The use ratio of the epoxy resin is preferably 30 parts by weight or less with respect to 100 parts by weight of the [A] component. By containing the [E] epoxy resin in such a ratio, the heat resistance and surface hardness of the interlayer insulating film or microlens obtained from the radiation-sensitive resin composition of the present invention can be further improved. If this ratio exceeds 30 parts by weight, the film thickness uniformity of the film may be insufficient when a film of the radiation-sensitive resin composition is formed on the substrate.
The [A] component can also be referred to as an “epoxy resin”, but differs from the [E] epoxy resin in that it has alkali solubility. [E] The epoxy resin is insoluble in alkali.

In the radiation sensitive resin composition of the present invention, the above-mentioned [F] surfactant can be used in order to further improve the coating property. As the [F] surfactant that can be used here, fluorine-based surfactants, silicone-based surfactants, and nonionic surfactants can be suitably used.
Specific examples of the fluorosurfactant include 1,1,2,2-tetrafluorooctyl (1,1,2,2-tetrafluoropropyl) ether, 1,1,2,2-tetrafluorooctylhexyl ether. , Octaethylene glycol di (1,1,2,2-tetrafluorobutyl) ether, hexaethylene glycol (1,1,2,2,3,3-hexafluoropentyl) ether, octapropylene glycol di (1,1 , 2,2-tetrafluorobutyl) ether, hexapropylene glycol di (1,1,2,2,3,3-hexafluoropentyl) ether, sodium perfluorododecyl sulfonate, 1,1,2,2,3 , 3,9,9,10,10-decafluorododecane, 1,1,2,2,3,3-hexafluorodecane, etc., and fluoroalkyl Sodium Nzensuruhon acid; fluoroalkyl polyoxyethylene ethers; fluoroalkyl ammonium iodide, fluoroalkyl polyoxyethylene ethers, perfluoroalkyl polyoxyethylene ethanol; perfluoroalkyl alkoxylate; fluorine-based alkyl ester, and the like.
These commercial products include BM-1000, BM-1100 (manufactured by BM Chemie), MegaFuck F142D, F172, F173, F183, F178, F191, F191 (and above, Dainippon Ink). Chemical Industries, Ltd.), Fluorad FC-170C, FC-171, FC-430, FC-431 (above, manufactured by Sumitomo 3M), Surflon S-112, S-113, S-131, S-141, S-145, S-382, SC-101, SC-102, SC-103, SC-104, SC-105, SC-106 (manufactured by Asahi Glass Co., Ltd.) ), F-top EF301, 303, and 352 (manufactured by Shin-Akita Kasei Co., Ltd.).

Examples of the silicone surfactant include DC3PA, DC7PA, FS-1265, SF-8428, SH11PA, SH21PA, SH28PA, SH29PA, SH30PA, SH-190, SH-193, SZ-6032 (above, Toray Dow Corning)・ Silicon Co., Ltd.), TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, TSF-4442 (above, GE Toshiba Silicone Co., Ltd.) are commercially available. You can list what you have.
Examples of the nonionic surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether Polyoxyethylene aryl ethers such as polyoxyethylene dilaurate, polyoxyethylene dialkyl esters such as polyoxyethylene distearate, etc .; (meth) acrylic acid copolymer polyflow Nos. 57 and 95 (Kyoeisha Chemical Co., Ltd.) ))) Can be used.
These surfactants can be used alone or in combination of two or more.
These [F] surfactants are preferably used in an amount of 5 parts by weight or less, more preferably 2 parts by weight or less based on 100 parts by weight of the component [A]. [F] When the amount of the surfactant used exceeds 5 parts by weight, the coating film may be easily formed when the coating film is formed on the substrate.

In the radiation sensitive resin composition of the present invention, [G] an adhesion assistant can be used in order to improve the adhesion to the substrate.
As such [G] adhesion assistant, a functional silane coupling agent is preferably used, and examples thereof include a silane coupling agent having a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group. . Specifically, trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and the like. Such [G] adhesion assistant is preferably used in an amount of 20 parts by weight or less, more preferably 10 parts by weight or less, relative to 100 parts by weight of the component [A]. When the amount of the adhesion assistant exceeds 20 parts by weight, there may be a case where development residue is likely to occur in the development process.

Radiation-sensitive resin composition The radiation-sensitive resin composition of the present invention is prepared by uniformly mixing the above-mentioned [A] component and [B] component and other components optionally added as described above. . The radiation-sensitive resin composition of the present invention is preferably used in a solution state after being dissolved in an appropriate solvent. For example, the radiation sensitive resin composition in a solution state can be prepared by mixing the [A] component and the [B] component and other components optionally added at a predetermined ratio.
As a solvent used for the preparation of the radiation sensitive resin composition of the present invention, the components [A] and [B] and other components optionally blended are uniformly dissolved and reacted with each component. What is not used is used.
As such a solvent, the thing similar to what was illustrated above can be mentioned as a solvent for synthesize | combining polysiloxane [A] preferably used as a [A] component.
Among such solvents, alcohol, glycol ether, ethylene glycol alkyl ether acetate, ester and diethylene glycol are preferably used from the viewpoints of solubility of each component, reactivity with each component, ease of film formation, and the like. . Among these, benzyl alcohol, 2-phenylethyl alcohol, 3-phenyl-1-propanol, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol dimethyl ether, propylene glycol monomethyl ether, Purpylene glycol monomethyl ether acetate, methyl 3-methoxypropionate, and ethyl 2-ethoxypropionate can be particularly preferably used.

Furthermore, in order to improve the in-plane uniformity of the film thickness together with the solvent, a high boiling point solvent can be used in combination. Examples of the high-boiling solvent that can be used in combination include N-methylformamide, N, N-dimethylformamide, N-methylformanilide, N-methylacetamide, N, N-dimethylacetamide, N-methylpyrrolidone, dimethylsulfoxide, and benzylethyl ether. , Dihexyl ether, acetonyl acetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl Examples include cellosolve acetate. Of these, N-methylpyrrolidone, γ-butyrolactone, and N, N-dimethylacetamide are preferable.
When a high boiling point solvent is used in combination as the solvent of the radiation sensitive resin composition of the present invention, the amount used is preferably 50% by weight or less, more preferably 40% by weight or less, still more preferably 30%, based on the total amount of the solvent. It can be made into weight% or less. If the amount of the high-boiling solvent used exceeds this amount, the coating film thickness uniformity, sensitivity, and residual film rate may decrease.
When preparing the radiation-sensitive resin composition of the present invention in a solution state, components other than the solvent in the solution (that is, the total amount of the [A] component and the [B] component and other components optionally added) The ratio (solid content concentration) can be arbitrarily set according to the purpose of use and the value of the desired film thickness, but is preferably 5 to 50% by weight, more preferably 10 to 40% by weight, and still more preferably Is 15 to 35% by weight.
The composition solution thus prepared may be used after being filtered using a Millipore filter having a pore size of about 0.2 μm.

Formation of Interlayer Insulating Film and Microlens Next, a method for forming the interlayer insulating film or microlens of the present invention using the radiation sensitive resin composition of the present invention will be described. The method for forming an interlayer insulating film or microlens of the present invention includes the following steps in the order described below.
(1) forming a film of the radiation sensitive resin composition of the present invention on a substrate;
(2) a step of irradiating at least a part of the coating;
(3) A step of developing the coating after irradiation, and (4) a step of heating the coating after development.
Hereafter, each process of the formation method of the interlayer insulation film or microlens of this invention is demonstrated in detail.

(1) In the process step (1) of forming a film of the radiation sensitive resin composition of the present invention on a substrate, the solvent is removed by applying the composition solution of the present invention to the substrate surface and preferably performing pre-baking. It removes and forms the film of a radiation sensitive resin composition.
Examples of the substrate that can be used include a glass substrate, a silicon substrate, and a substrate on which various metals are formed.
The method of applying the composition solution is not particularly limited, and an appropriate method such as a spray method, a roll coating method, a spin coating method (spin coating method), a slit die coating method, a bar coating method, an ink jet method, or the like is employed. In particular, a spin coating method or a slit die coating method is preferable. Prebaking conditions vary depending on the type of each component, the proportion of use, and the like. For example, it can be set at 60 to 110 ° C. for about 30 seconds to 15 minutes.
The film thickness to be formed is preferably, for example, 3 to 6 μm when an interlayer insulating film is formed, and 0.5 to 3 μm, for example, when a microlens is formed, as a value after pre-baking. .

(2) In the step (2) of irradiating at least part of the coating, radiation is applied to at least part of the coating formed as described above. In order to irradiate a part of the film with radiation, for example, a method of irradiating radiation through a mask having a predetermined pattern can be used.
Thereafter, patterning is performed by developing with a developer to remove the irradiated portion. Examples of the radiation used at this time include ultraviolet rays, far ultraviolet rays, X-rays, and charged particle beams.
Examples of the ultraviolet rays include radiation including g-line (wavelength 436 nm), i-line (wavelength 365 nm), and the like. Examples of the far ultraviolet light include KrF excimer laser. Examples of X-rays include synchrotron radiation. Examples of the charged particle beam include an electron beam.
Among these, ultraviolet rays are preferable, and radiation containing g-line and / or i-line is particularly preferable.
The dose of radiation as (exposure amount), 50~1,500J / ^{m 2} In the case of forming an interlayer insulating film, in the case of forming the microlenses and 50~2,000J / ^{m 2} It is preferable to do.

(3) Step of developing the film after irradiation The developer used in the development step (3) is, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine , N-propylamine, diethylamine, diethylaminoethanol, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1,8- An aqueous solution of an alkali (basic compound) such as diazabicyclo [5.4.0] -7-undecene or 1,5-diazabicyclo [4.3.0] -5-nonane can be used. In addition, an aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the above aqueous alkali solution, or various organic solvents that dissolve the composition of the present invention can be used as a developing solution.
As a developing method, for example, an appropriate method such as a liquid filling method, a dipping method, a rocking dipping method, a shower method, or the like can be used. The development time at this time varies depending on the composition of the composition, but can be, for example, 30 to 120 seconds.
In addition, the conventionally known radiation-sensitive resin composition has been required to strictly control the development time because the formed pattern peels when the development time exceeds about 20 to 25 seconds from the optimum value. In the case of the radiation-sensitive resin composition of the invention, good pattern formation is possible even when the excess time from the optimum development time is 30 seconds or more, and there is an advantage in product yield.

(4) Step of heating the film after development After the development step of step (3) performed as described above, the patterned thin film is preferably rinsed, for example, by running water washing, and more preferably high pressure By irradiating the entire surface with radiation from a mercury lamp (post-exposure), the 1,2-quinonediazide compound remaining in the thin film is decomposed, and then the thin film is heated by a heating device such as a hot plate or an oven. By performing the treatment (post-bake treatment), the thin film is cured. The exposure amount in the post-exposure step is preferably 2,000 to 5,000 J / m ² . Moreover, the baking temperature in this hardening process is 120 degreeC or more and less than 250 degreeC, for example. Although heating time changes with kinds of heating apparatus, for example, when performing heat processing on a hotplate, it can be set to 30 to 90 minutes when performing heat processing in oven, for example. At this time, a step baking method or the like in which a heating process is performed twice or more can also be used. In addition, when forming the coating of the photosensitive material which consists of polysiloxane conventionally known as a high heat resistant material on a board | substrate, the high temperature process of 250 degreeC or more was required, but the radiation sensitive resin composition of this invention In the case of a product, since this treatment temperature can be set to less than 250 ° C., further 240 ° C. or less, and further 230 ° C. or less, there is an advantage that it can be suitably applied to a process for forming a display element.
In this way, a patterned thin film corresponding to the target interlayer insulating film or microlens can be formed on the surface of the substrate.

Interlayer Insulating Film The interlayer insulating film of the present invention formed as described above has good adhesion to the substrate, excellent solvent resistance and heat resistance, as will be clarified from the examples described later. It has a high transmittance and a low dielectric constant, and can be suitably used as an interlayer insulating film for electronic parts.
The microlens of the present invention formed as described above has good adhesion to the substrate, excellent solvent resistance and heat resistance, and high, as will be apparent from the examples described later. It has a light transmittance and a good melt shape, and can be suitably used as a microlens for a solid-state imaging device.
The shape of the microlens of the present invention is a semi-convex lens shape as shown in FIG.

The present invention will be described more specifically with reference to synthesis examples and examples. However, the present invention is not limited to the following examples.
Synthesis example of component [A] Synthesis example 1
In a 500 mL three-necked flask equipped with a fractionating tube, 33.3 g of 2-hydroxyethyltrimethoxysilane and 72.1 g of dimethyldimethoxysilane were added and dissolved by adding 76.8 g of diethylene glycol methyl ethyl ether. The solution was heated to 40 ° C. over 30 minutes while stirring with a magnetic stirrer. To this, 43.3 g of ion exchange water containing 1.4 g of oxalic acid was continuously added over 30 minutes. Then, after reacting at 40 ° C. for 2 hours, the resulting reaction solution was depressurized to 10 Torr over 1 minute at 40 ° C., and the by-product methanol was distilled off by maintaining this reduced pressure for 60 minutes. Thereafter, the reaction solution was heated to 100 ° C. over 1 hour and reacted at 100 ° C. for 2 hours while distilling off water. The reaction solution thus obtained was cooled to 60 ° C., and 47.2 g of 3-glycidoxypropyltrimethoxysilane was first continuously added over 30 minutes, and then 10.8 g of 0.4 g of oxalic acid was contained. Ion exchange water was continuously added over 30 minutes, and the reaction was performed at 60 ° C. for 3 hours. Methanol and water are distilled off from the reaction solution under reduced pressure, and disiloxane glycol methyl ethyl ether is added so that the solid content concentration (weight ratio of polysiloxane in the solution) is 40% by weight. A solution containing A-1] was obtained. Polysiloxane [A-1] had a weight average molecular weight Mw in terms of polystyrene of 2,600.

Synthesis example 2
In a 500 mL three-necked flask equipped with a fractionating tube, 39.3 g of 3-mercaptopropyltrimethoxysilane and 119.0 g of phenyltrimethoxysilane were added and dissolved in 76.8 g of diethylene glycol methyl ethyl ether. The resulting solution was heated to 40 ° C. over 30 minutes while stirring with a magnetic stirrer. To this, 43.3 g of ion exchange water containing 1.4 g of oxalic acid was continuously added over 30 minutes. Then, after reacting at 40 ° C. for 2 hours, the resulting reaction solution was depressurized to 10 Torr over 1 minute at 40 ° C., and the by-product methanol was distilled off by maintaining this reduced pressure for 60 minutes. Thereafter, the reaction solution was heated to 100 ° C. over 1 hour, and the reaction was continued at 100 ° C. for 2 hours while distilling off water. The reaction solution thus obtained was cooled to 60 ° C., and 49.3 g of 2- (3 ′, 4′-epoxycyclohexyl) ethyltrimethoxysilane was first continuously added over 30 minutes, and then 0.4 g of oxalic acid was added. Was added continuously over 30 minutes, and the reaction was further carried out at 60 ° C. for 3 hours. Methanol and water were distilled off from the reaction solution under reduced pressure, and diethylene glycol methyl ethyl ether was added so that the solid concentration was 40% by weight to obtain a solution containing polysiloxane [A-2]. . Polysiloxane [A-2] had a weight average molecular weight Mw in terms of polystyrene of 2,500.

Synthesis example 3
In a 500 mL three-necked flask equipped with a fractionating tube, 55.7 g of 3- (3′-ethyloxetane-3′-yl) propyltrimethoxysilane, trimethoxysilylpropyl-2- (4′-hydroxyphenyl) propyl 66.1 g of thioether and 40.3 g of methyltrimethoxysilane were taken, 139.7 g of methyl isobutyl ketone was added and dissolved therein, and the resulting solution was heated to 60 ° C. while stirring with a magnetic stirrer. To this, 54.0 g of ion-exchanged water containing 1.0 g of triethylamine was continuously added over 1 hour. And after reacting at 60 degreeC for 3 hours, the obtained reaction liquid was cooled to room temperature. Thereafter, washing with 200 g of a 1% by weight oxalic acid aqueous solution was performed twice, and then washing with 200 g of ion-exchanged water was performed. A solution containing polysiloxane [A-3] is obtained by distilling off alcohol and water under reduced pressure from the obtained organic layer and adding diethylene glycol ethyl methyl ether so that the solid content concentration is 40% by weight. Got. Polysiloxane [A-3] had a polystyrene equivalent weight average molecular weight Mw of 2,400.

Comparative Synthesis Example 1
Into a 500 mL three-necked flask equipped with a fractionating tube, 88.5 g of methyltrimethoxysilane and 69.4 g of phenyltrimethoxysilane are added, and 138.9 g of diacetone alcohol is added and dissolved therein. While stirring with a magnetic stirrer, 54.0 g of ion-exchanged water containing 0.2 g of phosphoric acid was continuously added over 30 minutes. And after making it react at 40 degreeC for 30 minutes, it heated up to 100 degreeC over 1 hour, and was made to react for 2 hours, distilling off methanol and water. Thereafter, diacetone alcohol and γ-butyrolactone are added and diluted so that the solid content is 35% by weight and diacetone alcohol / γ-butyrolactone = 90/10 (weight ratio), and contains polysiloxane [a-1] A solution was obtained. The polysiloxane [a-1] had a polystyrene equivalent weight average molecular weight Mw of 2,900.
Comparative Synthesis Example 2
A flask equipped with a condenser and a stirrer was charged with 8 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 220 parts by weight of diethylene glycol ethyl methyl ether. Subsequently, 20 parts by weight of styrene, 20 parts by weight of methacrylic acid, 40 parts by weight of glycidyl methacrylate and 20 parts by weight of tricyclo [5.2.1.0 ^2,6 ] decan-8-yl methacrylate were charged, and the atmosphere was gradually replaced with nitrogen. Stirring started. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [a-2].
The copolymer [a-2] had a polystyrene equivalent weight average molecular weight Mw of 7,500 and a molecular weight distribution (Mw / Mn) of 2.5. The solid content concentration of the polymer solution obtained here was 31.6% by weight.

<Preparation of radiation-sensitive resin composition>
Example 1
An amount corresponding to 100 parts by weight (solid content) of polysiloxane [A-1] and 4,4′- as a component [B] were added to the solution containing polysiloxane [A-1] synthesized in Synthesis Example 1 above. [1- [4- [1- [4-Hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol) ) Condensate (B-1) (10 parts by weight) is mixed, and diethylene glycol ethyl methyl ether is added and uniformly dissolved so that the solid content concentration is 30% by weight, and then filtered through a membrane filter having a diameter of 0.2 μm. By doing this, the solution (S-1) of the radiation sensitive resin composition was prepared.
Examples 2-7, Comparative Examples 1-2
In Example 1, a solution of the radiation-sensitive resin composition was carried out in the same manner as in Example 1 except that the types and amounts shown in Table 1 were used as the [A] component and the [B] component. (S-2) to (S-7) and (s-1) to (s-2) were prepared.
In Examples 2 and 3, the description of the component [B] represents that two types of 1,2-quinonediazide compounds were used in combination. Further, in Example 5, in addition to the [A] component and the [B] component, [C] a thermosensitive acid generating compound is used. In Example 6, in addition to the [A] component and the [B] component, [C] E] component was added respectively.
Example 8
In Example 7, it was dissolved in diethylene glycol ethyl methyl ether / propylene glycol monomethyl ether acetate = 6/4 (weight ratio) so that the solid concentration was 20% by weight, and [F] surfactant was further added. Except for this, the same procedure as in Example 1 was carried out to prepare a solution (S-8) of a radiation sensitive resin composition.

In Table 1, the abbreviations of the components have the following meanings.
[B-1]: 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1.0 mol) and 1,2-naphthoquinonediazide -5-Sulphonic acid chloride (2.0 mol) condensate [B-2]: 4,4 ′, 4 ″ -ethylidinetris (phenol) (1.0 mol) and 1,2-naphthoquinonediazide— Condensate of 5-sulfonic acid chloride (2.0 mol) [B-3]: 2,3,4,4′-tetrahydroxybenzophenone (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid Ester (2.44 mol)
[C-1] Sun-Aid SI-L85 (manufactured by Sanshin Chemical Co., Ltd.)
[E-1] Epicoat 154 (manufactured by Japan Epoxy Resin Co., Ltd.)
[F-1]: SH-28PA (Toray Dow Corning Silicone Co., Ltd.)

<Performance evaluation as interlayer insulation film>
Examples 9-16, Comparative Examples 3-4
Using the radiation-sensitive resin composition prepared as described above, various characteristics as an interlayer insulating film were evaluated as follows.
[Evaluation of sensitivity]
For Examples 9 to 15 and Comparative Examples 3 to 4 on a silicon substrate, the composition described in Table 2 was applied using a spinner, and then prebaked on a hot plate at 100 ° C. for 2 minutes. A coating film having a thickness of 4.0 μm was formed. For Example 16, coating was performed with a slit die coater, the solvent was removed by reducing the pressure to 0.5 Torr over 15 seconds at room temperature, and then prebaking on a hot plate at 100 ° C. for 2 minutes to obtain a film thickness of 4 A coating film of 0.0 μm was formed.
The obtained coating film was exposed using a PLA-501F exposure machine (extra-high pressure mercury lamp) manufactured by Canon Inc. through a pattern mask having a predetermined pattern, and then 2.38% by weight. Development with a liquid piling method was performed with an aqueous tetramethylammonium hydroxide solution at 25 ° C. for 80 seconds. Next, the substrate was washed with ultrapure water for 1 minute and dried to form a pattern on the silicon substrate. At this time, the minimum exposure amount required to completely dissolve the 3.0 μm line-and-space (10 to 1) space pattern was examined. This minimum exposure amount is shown in Table 2 as sensitivity.

[Evaluation of development margin]
For Examples 9 to 15 and Comparative Examples 3 to 4 on a silicon substrate, the composition described in Table 2 was applied using a spinner, and then prebaked on a hot plate at 100 ° C. for 2 minutes. A coating film having a thickness of 4.0 μm was formed. For Example 16, coating was performed with a slit die coater, the solvent was removed by reducing the pressure to 0.5 Torr over 15 seconds at room temperature, and then prebaking on a hot plate at 100 ° C. for 2 minutes to obtain a film thickness of 4 A coating film of 0.0 μm was formed.
Using a PLA-501F exposure machine (extra-high pressure mercury lamp) manufactured by Canon Inc. through a mask having a 3.0 μm line and space (10 to 1) pattern on each of the obtained coating films, the above Exposure is performed with an exposure amount corresponding to the sensitivity value investigated in “[Evaluation of Sensitivity]”, and a 2.38 wt. Developed. Next, the substrate was washed with ultrapure water for 1 minute and then dried to form a pattern on the silicon substrate. At this time, the development time required for the line width to be 3 μm is shown in Table 2 as the optimum development time. Further, when the development was further continued from the optimum development time, the time until the 3.0 μm line pattern was peeled off was measured and shown in Table 2 as a development margin.

[Evaluation of solvent resistance]
For Examples 9 to 15 and Comparative Examples 3 to 4 on a silicon substrate, the compositions described in Table 2 were applied using a spinner and then prebaked on a hot plate at 100 ° C. for 2 minutes. A film was formed. For Example 16, coating was performed with a slit die coater, the solvent was removed by reducing the pressure to 0.5 Torr at room temperature over 15 seconds, and then prebaked on a hot plate at 100 ° C. for 2 minutes to form a coating film did.
Each of the obtained coating films was exposed to a cumulative exposure of 3,000 J / m ² with a PLA-501F exposure machine (extra-high pressure mercury lamp) manufactured by Canon Inc., and the silicon substrate was placed in a clean oven. A cured film having a thickness of about 3.0 μm was obtained by heating at 220 ° C. for 1 hour. The film thickness (T1) of the obtained cured film was measured. And after immersing the silicon substrate in which this cured film was formed in the dimethyl sulfoxide temperature-controlled at 70 degreeC for 20 minutes, the film thickness (t1) after immersion of the said cured film was measured, and the film thickness change rate by immersion {| T1-T1 | / T1} × 100 [%] was calculated. The results are shown in Table 2.
In the evaluation of solvent resistance, patterning of the film to be formed is unnecessary, so the radiation irradiation process and the development process were omitted, and only the coating film forming process, the post-baking process, and the heating process were performed for evaluation.

[Evaluation of heat resistance]
A cured film was formed on a silicon substrate in the same manner as in the above “[Evaluation of solvent resistance]”, and the thickness (T2) of the obtained cured film was measured. Next, this substrate with cured film was additionally baked in a clean oven at 240 ° C. for 1 hour, and then the film thickness after additional baking (t2) of the cured film was measured, and the rate of change in film thickness by additional baking {| t2− T2 | / T2} × 100 [%] was calculated. The results are shown in Table 2.
[Evaluation of transparency]
A cured film was formed on the glass substrate in the same manner as in the above “[Evaluation of solvent resistance]”, except that a glass substrate “Corning 7059” (manufactured by Corning) was used instead of the silicon substrate. The light transmittance of the glass substrate having this cured film was measured at a wavelength in the range of 400 to 800 nm using a spectrophotometer “150-20 type double beam” (manufactured by Hitachi, Ltd.). Table 2 shows the values of the minimum light transmittance at that time.

[Evaluation of relative permittivity]
On the polished SUS304 substrate, for Examples 9 to 15 and Comparative Examples 3 to 4, the compositions shown in Table 2 were applied using a spinner, and then pre-baked on a hot plate at 100 ° C. for 2 minutes. As a result, a coating film having a thickness of 3.0 μm was formed. For Example 16, coating was performed with a slit die coater, the solvent was removed by reducing the pressure to 0.5 Torr over 15 seconds at room temperature, and then pre-baking on a hot plate at 100 ° C. for 2 minutes to obtain a film thickness of 3. A 0 μm coating film was formed.
Each of the obtained coating films was exposed with a PLA-501F exposure machine (extra-high pressure mercury lamp) manufactured by Canon Co., Ltd. so that the integrated irradiation amount was 3,000 J / m ^2, and then each substrate was placed in a clean oven. A cured film was formed on the substrate by heating at 220 ° C. for 1 hour. A Pt / Pd electrode pattern was formed on the cured film by vapor deposition to prepare a sample for measuring dielectric constant. With respect to this substrate, the relative dielectric constant at a frequency of 10 kHz was measured by a CV method using an HP16451B electrode manufactured by Yokogawa-Hewlett-Packard Co., Ltd. and an HP4284A precision LCR meter. The results are shown in Table 2.
In the evaluation of the dielectric constant, since the patterning of the film to be formed is unnecessary, the radiation irradiation process and the development process were omitted, and only the coating film forming process, the post-baking process, and the heating process were performed for evaluation.

<Performance evaluation as a micro lens>
Examples 17-23, Comparative Examples 5-6
Using the radiation-sensitive resin composition prepared as described above, various characteristics as a microlens were evaluated as follows. For the evaluation of solvent resistance, evaluation of heat resistance, and evaluation of transparency, refer to the results of performance evaluation as the interlayer insulating film.
[Evaluation of sensitivity]
Each composition shown in Table 3 was applied onto a silicon substrate using a spinner and then prebaked on a hot plate at 100 ° C. for 2 minutes to form a coating film having a thickness of 2.0 μm. The obtained coating film was exposed through a pattern mask having a predetermined pattern with an NSR1755i7A reduced projection exposure machine (NA = 0.50, λ = 365 nm) manufactured by Nikon Corporation, with the exposure time being variable, and 2.38 weight. The film was developed by a puddle method at 25 ° C. for 1 minute in an aqueous tetramethylammonium hydroxide solution. Next, the substrate was rinsed with water and dried to form a pattern on the silicon substrate. The minimum exposure amount required for the space line width of the 0.8 μm line and space pattern (1 to 1) to be 0.8 μm was examined. This minimum exposure amount is shown in Table 3 as sensitivity.

[Evaluation of development margin]
Each composition shown in Table 3 was applied onto a silicon substrate using a spinner and then pre-baked on a hot plate at 100 ° C. for 2 minutes to form a coating film having a thickness of 2.0 μm. The above-mentioned “[Evaluation of sensitivity]” was examined with a NSR1755i7A reduction projection exposure machine (NA = 0.50, λ = 365 nm) manufactured by Nikon Corporation through a pattern mask having a predetermined pattern on the obtained coating film. Exposure was carried out with an exposure amount corresponding to the sensitivity value, and development was carried out with a tetramethylammonium hydroxide aqueous solution having a concentration shown in Table 3 at 25 ° C. for 1 minute. It was rinsed with water and dried to form a pattern on the silicon substrate. Table 3 shows the development time necessary for the space line width of 0.8 μm line and space pattern (one to one) to be 0.8 μm as the optimum development time. Further, when the development was further continued from the optimum development time, the time until the pattern having a width of 0.8 μm was peeled off (development margin) was measured and shown in Table 3 as the development margin.

[Formation of microlenses]
Each composition shown in Table 3 was applied onto a silicon substrate using a spinner and then pre-baked on a hot plate at 100 ° C. for 2 minutes to form a coating film having a thickness of 2.0 μm. The obtained coating film was passed through a pattern mask having 4.0 [mu] m dots and 2.0 [mu] m space pattern with a NSR1755i7A reduction projection exposure machine (NA = 0.50, [lambda] = 365 nm) manufactured by Nikon Corporation. Exposure was carried out with an exposure amount corresponding to the sensitivity value examined in [Evaluation of Sensitivity], and development was performed with a 2.38 wt% tetramethylammonium hydroxide aqueous solution at 25 ° C. for 1 minute. Next, a pattern was formed on the silicon substrate by rinsing with water and drying. Then, it exposed so that an integrated irradiation amount might be set to 3,000 J / m < ² > with the PLA-501F exposure machine (extra-high pressure mercury lamp) by Canon. Thereafter, the plate was heated at 160 ° C. for 10 minutes on a hot plate and further heated at 230 ° C. for 10 minutes to melt flow the pattern to form a microlens.
Table 3 shows the size (diameter) and cross-sectional shape of the bottom (surface contacting the substrate) of the formed microlens. It can be said that the microlens bottom portion is good when it is larger than 4.0 μm and smaller than 5.0 μm. When this dimension is 5.0 μm or more, the adjacent lenses are in contact with each other, which is not preferable. Further, the cross-sectional shape is good when it is a semi-convex lens shape as shown in (a) in the schematic diagram shown in FIG. 1, and it is bad when it is on a substantially trapezoidal shape as shown in (b).
In Comparative Example 5, since the melt-flowed microlens patterns were in contact with the adjacent patterns, it was impossible to measure the diameter of the bottom surface and evaluate the cross-sectional shape.

It is a schematic diagram of the cross-sectional shape of a micro lens.

Claims (6)

[A] a polysiloxane having at least one group selected from the group consisting of an oxiranyl group and an oxetanyl group and a functional group capable of undergoing an addition reaction with the oxiranyl group or oxetanyl group, and [B] a 1,2-quinonediazide compound. A radiation-sensitive resin composition comprising: [A] Polysiloxane is
(A1) a silane compound having at least one group selected from the group consisting of an oxiranyl group and an oxetanyl group and a hydrolyzable group,
(A2) a silane compound having a hydrolyzable group and a functional group capable of undergoing addition reaction with an oxiranyl group or oxetanyl group, and a hydrolysis condensate of a hydrolyzable silane compound other than (a3), (a1), and (a2) The radiation sensitive resin composition of Claim 1 which exists.   [A] The radiation-sensitive resin composition according to claim 1 or 2, wherein the functional group capable of undergoing addition reaction with the oxiranyl group or oxetanyl group in the polysiloxane is a hydroxyl group, a mercapto group or an amino group.   The radiation sensitive resin composition as described in any one of Claims 1-3 which is an object for interlayer insulation film formation or microlens formation. A method for forming an interlayer insulating film or a microlens, comprising the following steps in the order described below.
(1) The process of forming the film of the radiation sensitive resin composition of Claim 4 on a board | substrate,
(2) a step of irradiating at least a part of the coating;
(3) A step of developing the coating after irradiation, and (4) a step of heating the coating after development.   An interlayer insulating film or a microlens formed by the method according to claim 5.

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