JP2008269793A - Microwave processor - Google Patents

Microwave processor Download PDF

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JP2008269793A
JP2008269793A JP2007106788A JP2007106788A JP2008269793A JP 2008269793 A JP2008269793 A JP 2008269793A JP 2007106788 A JP2007106788 A JP 2007106788A JP 2007106788 A JP2007106788 A JP 2007106788A JP 2008269793 A JP2008269793 A JP 2008269793A
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unit
power
phase
microwave
heated
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JP5167678B2 (en
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Kenji Yasui
健治 安井
Tomotaka Nobue
等隆 信江
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/70Feed lines
    • H05B6/705Feed lines using microwave tuning
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2206/00Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
    • H05B2206/04Heating using microwaves
    • H05B2206/044Microwave heating devices provided with two or more magnetrons or microwave sources of other kind

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device to heat various heated objects efficiently by optimumly arranging a plurality of power feeding parts on a wall face of a heating room, and optimizing frequency and phase difference of a radiated microwave from the respective power feeding parts. <P>SOLUTION: A microwave generating part 1 is equipped with an oscillating part 2, an electric power distributing part 3, amplifying parts 5a, 5b, the heating room 8 to house the heated objects, the power feeding parts 7a, 7b which are arranged on the wall face of the heating room 8, to which output of the microwave generating part 1 is transmitted, and in which the microwave is radiated and supplied to the heating room 8, and phase variable parts 4a, 4b inserted into a microwave transmitting passage. By variable control of the phase difference and an oscillation frequency of the microwave output from the power feeding parts 7a, 7b, reflected electric power against the various heated objects are suppressed to the minimum, and highly efficient heating can be achieved. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体素子を用いて構成したマイクロ波発生部を備えたマイクロ波処理装置に関するものである。   The present invention relates to a microwave processing apparatus including a microwave generation unit configured using a semiconductor element.

従来のこの種のマイクロ波処理装置は、半導体発振部と、発振部の出力を複数に分割する分配部と、分配された出力をそれぞれ増幅する複数の増幅部と、増幅部の出力を合成する合成部とを有し、分配部と増幅部との間に位相器を設けたものがある(たとえば、特許文献1)。   A conventional microwave processing apparatus of this type combines a semiconductor oscillation unit, a distribution unit that divides the output of the oscillation unit into a plurality of units, a plurality of amplification units that amplify the distributed outputs, and the output of the amplification unit. Some have a combining unit and a phase shifter is provided between the distributing unit and the amplifying unit (for example, Patent Document 1).

そして、位相器はダイオードのオンオフ特性によりマイクロ波の通過線路長を切り替える構成としている。また、合成部は90度および180度ハイブリッドを用いることで合成部の出力を2つにすることができ、位相器を制御することで2出力の電力比を変化させたり、2出力間の位相を同相あるいは逆相にすることができるとしている。   The phase shifter is configured to switch the microwave pass line length according to the on / off characteristics of the diode. In addition, the synthesis unit can use two 90 degree and 180 degree hybrids, so that the output of the synthesis unit can be made two. By controlling the phase shifter, the power ratio of the two outputs can be changed, or the phase between the two outputs can be changed. Can be in phase or out of phase.

また、この種のマイクロ波処理装置は、一般には電子レンジに代表されるようにマイクロ波発生部にマグネトロンと称される真空管を用いている。
特開昭56−132793号公報
In addition, this type of microwave processing apparatus generally uses a vacuum tube called a magnetron in a microwave generation section as represented by a microwave oven.
JP 56-132793 A

しかしながら、前記従来の構成での合成部の2つの出力から放射されるマイクロ波は、位相器によって位相を変化させることで2つの放射アンテナからの放射電力比や位相差を任意にかつ瞬時に変化させることは可能だが、その放射によってマイクロ波が供給される加熱室内に収納されたさまざまな形状・種類・量の異なる被加熱物を所望の状態に加熱することは難しいという課題を有していた。   However, the microwaves radiated from the two outputs of the combining unit in the conventional configuration change the radiated power ratio and phase difference from the two radiating antennas arbitrarily and instantaneously by changing the phase by the phase shifter. Although there is a problem that it is difficult to heat objects to be heated in various shapes, types, and quantities stored in a heating chamber to which microwaves are supplied by the radiation to a desired state. .

本発明は、上記従来の課題を解決するもので、マイクロ波を放射する機能を有した複数の給電部を加熱室を構成する壁面に最適に配置するとともにそれぞれの給電部から放射されるマイクロ波の位相差および発振周波数を最適化することで、さまざまな形状・種類・量の異なる被加熱物を所望の状態に加熱するマイクロ波発処理装置を提供することを目的とする。   The present invention solves the above-described conventional problems, and optimally arranges a plurality of power supply units having a function of radiating microwaves on a wall surface constituting a heating chamber and radiates microwaves from the respective power supply units. An object of the present invention is to provide a microwave generation processing apparatus that heats objects to be heated having various shapes, types, and amounts to a desired state by optimizing the phase difference and the oscillation frequency.

前記従来の課題を解決するために、本発明のマイクロ波処理装置は、発振部と、前記発振部の出力を複数に分配して出力する電力分配部と、前記電力分配部の出力の位相を可変する位相可変部と、前記位相可変部の出力をそれぞれ電力増幅する増幅部と、前記増幅部の出力をそれぞれ出力する複数の出力部とを有するマイクロ波発生部と、被加熱物を収納する加熱室と、前記加熱室に前記マイクロ波発生部のそれぞれの出力を供給する複数の給電部と、前記発振部の発振周波数と前記位相可変部の位相量を制御する制御部とを備え、前記複数の給電部は加熱室を構成する壁面の異なる複数の壁面に配置したものであり、複数の給電部から放射するマイクロ波の位相差および周波数を反射電力が最小となるように制御することによって加熱室に放射したマイクロ波を有効に被加熱物に吸収させ、またマイクロ波放射を異なる複数の壁面から行うことで異なる方向から被加熱物に直接的にマイクロ波を入射させることができ、さまざまな形状・種類・量の異なる被加熱物を所望の状態に加熱することができる。   In order to solve the conventional problems, a microwave processing device of the present invention includes an oscillation unit, a power distribution unit that distributes and outputs the output of the oscillation unit, and a phase of the output of the power distribution unit. A microwave generation unit having a variable phase variable unit, an amplifying unit for amplifying each of the outputs of the phase variable unit, and a plurality of output units for outputting the outputs of the amplifying unit, and an object to be heated are accommodated. A heating chamber, a plurality of power feeding units that supply the respective outputs of the microwave generation unit to the heating chamber, and a control unit that controls the oscillation frequency of the oscillation unit and the phase amount of the phase variable unit, The plurality of power feeding units are arranged on a plurality of different wall surfaces constituting the heating chamber, and by controlling the phase difference and frequency of the microwaves radiated from the plurality of power feeding units so that the reflected power is minimized. In the heating chamber The irradiated microwave is effectively absorbed by the object to be heated, and the microwave radiation can be directly incident on the object to be heated from different directions by performing microwave radiation from different wall surfaces. Objects to be heated of different types and amounts can be heated to a desired state.

本発明のマイクロ波処理装置は、マイクロ波を放射する機能を有した複数の給電部を加熱室を構成する壁面に最適に配置するとともにそれぞれの給電部から放射されるマイクロ波の位相差および周波数を最適化することで、さまざまな形状・種類・量の異なる被加熱物を所望の状態に加熱するマイクロ波処理装置を提供することができる。   The microwave processing apparatus of the present invention optimally arranges a plurality of power supply units having a function of radiating microwaves on the wall surface constituting the heating chamber, and the phase difference and frequency of the microwaves radiated from each power supply unit By optimizing the above, it is possible to provide a microwave processing apparatus that heats an object to be heated of various shapes, types, and amounts to a desired state.

第1の発明は、発振部と、前記発振部の出力を複数に分配して出力する電力分配部と、前記電力分配部の出力の位相を可変する位相可変部と、前記位相可変部の出力をそれぞれ電力増幅する増幅部と、前記増幅部の出力をそれぞれ出力する複数の出力部とを有するマイクロ波発生部と、被加熱物を収納する加熱室と、前記加熱室に前記マイクロ波発生部のそれぞれの出力を供給する複数の給電部と、前記発振部の発振周波数と前記位相可変部の位相量を制御する制御部とを備え、前記複数の給電部は加熱室を構成する壁面の異なる複数の壁面に配置するとともに前記給電部から放射されるマイクロ波の位相差と周波数を制御する構成としたものであり、複数の給電部から放射するマイクロ波の位相差および周波数を反射電力が最小となるように制御することによって加熱室に放射したマイクロ波を効率的に被加熱物に吸収させ、またマイクロ波放射を異なる複数の壁面から行うことで異なる方向から被加熱物に直接的にマイクロ波を入射させることができ、さまざまな形状・種類・量の異なる被加熱物を所望の状態に加熱することができる。   The first invention includes an oscillating unit, a power distributing unit that distributes and outputs the output of the oscillating unit, a phase varying unit that varies the phase of the output of the power distributing unit, and an output of the phase varying unit A microwave generation unit having an amplification unit for amplifying each of the power and a plurality of output units for outputting outputs of the amplification unit, a heating chamber for storing an object to be heated, and the microwave generation unit in the heating chamber And a control unit that controls the oscillation frequency of the oscillating unit and the phase amount of the phase variable unit, and the plurality of power feeding units have different wall surfaces that constitute the heating chamber. The configuration is such that the phase difference and the frequency of the microwaves radiated from the power feeding unit are controlled while being arranged on a plurality of wall surfaces, and the reflected power is minimized with respect to the phase difference and the frequency of the microwaves radiated from the plurality of power feeding units. To be By controlling, the microwave radiated into the heating chamber is efficiently absorbed by the object to be heated, and the microwave radiation is directly incident on the object to be heated from different directions by performing microwave radiation from different wall surfaces. It is possible to heat objects to be heated in various shapes, types, and amounts to a desired state.

第2の発明は、特に第1の発明の増幅部の出力をマイクロ波発生部に伝送する複数の伝送路に各々電力検出部を設け、前記マイクロ波発生部から前記増幅部に反射される反射電力を検出するとともに、制御部は前記反射電力が最小となる周波数および位相差に位相可変部および発振部を制御する構成からなり、これにより反射電力を最小に抑制して被加熱物の加熱を効率的に行い、短時間での加熱を実現することが可能となる。   In the second invention, in particular, a power detection unit is provided in each of a plurality of transmission paths for transmitting the output of the amplification unit of the first invention to the microwave generation unit, and reflection reflected from the microwave generation unit to the amplification unit. The control unit is configured to control the phase variable unit and the oscillation unit to the frequency and phase difference at which the reflected power is minimized, thereby suppressing the reflected power to the minimum and heating the object to be heated. It is possible to efficiently perform heating in a short time.

第3の発明は、特に第2の発明の制御部は加熱室に収容された被加熱物を加熱処理する前段階で、加熱処理するマイクロ波の電力よりも低い電力で反射電力が最小となる周波数および位相差を検出する予備動作をする構成とすることにより、様々な形状、種類、分量の異なる被加熱物が加熱室に載置された場合でも過大な反射電力によって増幅部に致命的な損傷を負わせることなく被加熱物の加熱を効率的におこうなうことができる。   In the third aspect of the invention, in particular, the control unit of the second aspect of the invention is a stage before heat-treating the object to be heated accommodated in the heating chamber, and the reflected power is minimized at a power lower than the power of the microwave to be heat-treated. By adopting a preparatory operation to detect the frequency and phase difference, even when heated objects with different shapes, types, and quantities are placed in the heating chamber, it is fatal to the amplifier due to excessive reflected power. The object to be heated can be efficiently heated without damaging it.

第4の発明は、特に第2ないし第3の発明の制御部は加熱室に収容された被加熱物を加熱処理する際、電力検出部が検出する反射電力が所定の反射電力以下となるように位相可変部の位相量と発振部の発振周波数を可変制御する構成とすることにより、様々な形状、種類、分量の異なる被加熱物が加熱室に載置された場合でも過大な反射電力によって増幅部に致命的な損傷を負わせることなく被加熱物の加熱を効率的におこうなうことができると同時に、加熱中も常時所定の反射電力以下となる位相差および発振周波数を維持できるため常に効率的に被加熱物の加熱を行うことができる。   In the fourth aspect of the invention, in particular, when the control unit of the second to third aspects of the invention heats the object to be heated contained in the heating chamber, the reflected power detected by the power detection unit is less than or equal to the predetermined reflected power. In addition, by adopting a configuration in which the phase amount of the phase variable unit and the oscillation frequency of the oscillation unit are variably controlled, even when heated objects of various shapes, types, and quantities are placed in the heating chamber, excessive reflected power It is possible to efficiently heat the object to be heated without inflicting fatal damage to the amplification unit, and at the same time, it is possible to maintain a phase difference and an oscillation frequency that are always below a predetermined reflected power during heating. Therefore, the object to be heated can always be efficiently heated.

第5の発明は、特に第2ないし第3の発明の制御部は加熱室に収容された被加熱物を加熱処理する際、電力検出部が検出する反射電力が常に最低値となるように位相可変部の位相量と発振部の発振周波数を可変制御する構成することにより、様々な形状、種類、分量の異なる被加熱物が加熱室に載置された場合でも過大な反射電力によって増幅部に致命的な損傷を負わせることなく被加熱物の加熱を効率的におこうなうことができると同時に、加熱中も常時所定の反射電力以下となる位相差および発振周波数を維持できるため被加熱物の温度上昇によって電波の吸収および反射の状態が変化しても常に効率的に被加熱物の加熱を行うことができる。   In the fifth aspect of the invention, in particular, when the control unit of the second to third aspects of the invention heat-treats the object to be heated, the phase of the reflected power detected by the power detection unit is always the lowest value. By variably controlling the phase amount of the variable part and the oscillation frequency of the oscillating part, even when heated objects of various shapes, types, and quantities are placed in the heating chamber, excessive reflected power is applied to the amplifying part. Heating of an object to be heated can be performed efficiently without inflicting fatal damage, and at the same time, the phase difference and oscillation frequency that are always below the specified reflected power can be maintained during heating, so that the object is heated. Even if the state of radio wave absorption and reflection changes due to an increase in the temperature of the object, the object to be heated can always be efficiently heated.

第6の発明は、特に第2ないし第5の発明の位相可変部の位相量および発振部の発振周
波数の変化量は、被加熱物を加熱処理する際と加熱処理前に反射電力が最小値となる位相量および発振周波数を検索する予備動作時で異なるようにしたものであり、様々な形状、種類、分量の異なる被加熱物が加熱室に載置された場合でも過大な反射電力によって増幅部に致命的な損傷を負わせることなく被加熱物の加熱を効率的におこうなうことができると同時に、加熱中も常時所定の反射電力以下となる位相差および発振周波数を維持できるため被加熱物の温度上昇によって電波の吸収および反射の状態が変化しても常に効率的に被加熱物の加熱を行うことができる。
In the sixth aspect of the invention, in particular, the phase amount of the phase varying unit and the amount of change in the oscillation frequency of the oscillation unit of the second to fifth aspects are such that the reflected power is the minimum value when the object to be heated is heated and before the heating process. The phase amount and oscillation frequency to be searched are different during the preliminary operation, and are amplified by excessive reflected power even when heated objects of various shapes, types, and quantities are placed in the heating chamber. Heating of an object to be heated can be performed efficiently without causing fatal damage to the part, and at the same time, the phase difference and oscillation frequency that are always below the specified reflected power can be maintained during heating. Even if the state of radio wave absorption and reflection changes due to the temperature rise of the heated object, the heated object can always be efficiently heated.

以下、本発明の実施の形態について、図面を参照しながら説明する。なお、この実施の形態によって本発明が限定されるものではない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the present invention is not limited to the embodiments.

(実施の形態1)
図1は、本発明の第1の実施の形態におけるマイクロ波処理装置の構成図である。
(Embodiment 1)
FIG. 1 is a configuration diagram of a microwave processing apparatus according to the first embodiment of the present invention.

図1において、マイクロ波発生部1は半導体素子を用いて構成した発振部2、発振部2の出力を2分配する電力分配部3、電力分配部3それぞれの出力を増幅する半導体素子を用いて構成した増幅部5a、5b、増幅部5a、5bによって増幅されたマイクロ波出力を加熱室内に放射する給電部7a、7b、および電力分配部3と増幅部5a、5bを接続するマイクロ波伝送路に挿入され入出力に任意の位相差を発生させる位相可変部4a、4b、増幅部5a、5bと給電部7a、7bを接続するマイクロ波伝送路に挿入され給電部7あ、7bから反射する電力を検出する電力検出部6a、6b、電力検出部6a、6bによって検出される反射電力に応じて発振部2の発振周波数と位相可変部4a、4bの位相量を制御する制御部10とで構成している。   In FIG. 1, a microwave generation unit 1 includes an oscillation unit 2 configured using semiconductor elements, a power distribution unit 3 that distributes the output of the oscillation unit 2 into two, and a semiconductor element that amplifies the output of each of the power distribution units 3. The configured amplifying units 5a and 5b, the power feeding units 7a and 7b that radiate the microwave output amplified by the amplifying units 5a and 5b into the heating chamber, and the microwave transmission path that connects the power distribution unit 3 and the amplifying units 5a and 5b Is inserted in the microwave transmission path connecting the phase variable units 4a and 4b, the amplifying units 5a and 5b, and the power feeding units 7a and 7b to generate an arbitrary phase difference between input and output, and reflected from the power feeding units 7a and 7b. The power detection units 6a and 6b that detect power, and the control unit 10 that controls the oscillation frequency of the oscillation unit 2 and the phase amount of the phase variable units 4a and 4b according to the reflected power detected by the power detection units 6a and 6b. Structure It is.

また、本発明のマイクロ波処理装置は、被加熱物を収納する略直方体構造からなる加熱室8を有し、加熱室8は金属材料からなる左壁面、右壁面、底壁面、上壁面、奥壁面および被加熱物を収納するために開閉する開閉扉(図示していない)と、被加熱物を載置する載置台から構成し、供給されるマイクロ波を内部に閉じ込めるように構成している。そして、マイクロ波発生部1の出力が伝送されそのマイクロ波を加熱室8内に放射供給する給電部7a、7bが加熱室8を構成する壁面に配置されている。本実施の形態では対向構成の左壁面と右壁面の略中央にそれぞれ給電部7aと7bを配置した構成を示している。この給電部の配置は本実施の形態に拘束されるものではなくいずれかの壁面に複数の給電部を設けてもよいし、対向面ではない例えば右壁面と底壁面のような組合せであってもかまわない。   In addition, the microwave processing apparatus of the present invention has a heating chamber 8 having a substantially rectangular parallelepiped structure that accommodates an object to be heated, and the heating chamber 8 has a left wall surface, a right wall surface, a bottom wall surface, an upper wall surface, and a back wall made of a metal material. An open / close door (not shown) that opens and closes to store the wall surface and the object to be heated, and a mounting table on which the object to be heated is placed, are configured to confine the supplied microwave inside. . The power supply units 7 a and 7 b that transmit the output of the microwave generation unit 1 and radiate the microwave into the heating chamber 8 are arranged on the wall surface of the heating chamber 8. In the present embodiment, a configuration is shown in which power feeding portions 7a and 7b are arranged at approximately the center of the left wall surface and the right wall surface of the opposing configuration, respectively. The arrangement of the power supply unit is not limited to the present embodiment, and a plurality of power supply units may be provided on any wall surface, or a combination such as a right wall surface and a bottom wall surface that is not an opposing surface. It doesn't matter.

増幅部5a、5bは、低誘電損失材料から構成した誘電体基板の片面に形成した導電体パターンにて回路を構成し、各増幅部の増幅素子である半導体素子を良好に動作させるべく各半導体素子の入力側と出力側にそれぞれ整合回路を配している。   The amplifying units 5a and 5b constitute a circuit with a conductor pattern formed on one side of a dielectric substrate made of a low dielectric loss material, and each semiconductor is operated in order to operate a semiconductor element that is an amplifying element of each amplifying unit satisfactorily. Matching circuits are arranged on the input side and output side of the element, respectively.

各々の機能ブロックを接続するマイクロ波伝送路は、誘電体基板の片面に設けた導電体パターンによって特性インピーダンスが略50Ωの伝送回路を形成している。   The microwave transmission path connecting each functional block forms a transmission circuit having a characteristic impedance of about 50Ω by a conductor pattern provided on one side of the dielectric substrate.

電力分配部3は、例えばウィルキンソン型分配器のような出力間に位相差を生じない同相分配器であってもよいし、ブランチライン型やラットレース型のような出力間に位相差を生じる分配器であってもかまわない。この電力分配部3によって各々の出力には発振部2から入力されたマイクロ波電力の略1/2の電力が伝送される。   The power distribution unit 3 may be an in-phase distributor that does not generate a phase difference between outputs such as a Wilkinson distributor, or a distribution that generates a phase difference between outputs such as a branch line type or a rat race type. It can be a vessel. The power distribution unit 3 transmits approximately half of the microwave power input from the oscillation unit 2 to each output.

また、位相可変部4a、4bは、印加電圧に応じて容量が変化する容量可変素子を用いて構成し、各々の位相可変範囲は、0度から略180度の範囲としている。これによって位相可変部4a、4bから出力されるマイクロ波電力の位相差は0度から±180度の範
囲を制御することができる。
Further, the phase variable units 4a and 4b are configured using a variable capacitance element whose capacitance changes according to the applied voltage, and each phase variable range is a range from 0 degree to about 180 degrees. As a result, the phase difference between the microwave powers output from the phase variable units 4a and 4b can be controlled in the range of 0 degrees to ± 180 degrees.

また、電力検知部6a、6bは、加熱室8側からマイクロ波発生部1側にそれぞれ伝送するいわゆる反射波の電力を抽出するものであり、電力結合度をたとえば約40dBとし、反射電力の約1/10000の電力量を抽出する。この電力信号はそれぞれ、検波ダイオード(図示していない)で整流化しコンデンサ(図示していない)で平滑処理し、その出力信号を制御部10に入力させている。   The power detection units 6a and 6b extract so-called reflected wave power transmitted from the heating chamber 8 side to the microwave generation unit 1 side. The power coupling degree is about 40 dB, for example. Extract the electric energy of 1/10000. Each power signal is rectified by a detection diode (not shown), smoothed by a capacitor (not shown), and the output signal is input to the control unit 10.

制御部10は、使用者が直接入力する被加熱物の加熱条件(矢印28)あるいは加熱中に被加熱物の加熱状態から得られる加熱情報と電力検知部6a、6bからの検知情報に基づいて、マイクロ波発生部1の構成要素である発振部2と増幅部5a、5bのそれぞれに供給する駆動電力の制御や位相可変部4a、4bに供給する電圧を制御し、加熱室8内に収納された被加熱物を最適に加熱する。   Based on the heating condition (arrow 28) of the heated object directly input by the user or the heating information obtained from the heated state of the heated object during heating and the detection information from the power detection units 6a and 6b, the control unit 10 The driving power supplied to each of the oscillation unit 2 and the amplification units 5a and 5b, which are components of the microwave generation unit 1, and the voltage supplied to the phase variable units 4a and 4b are controlled and stored in the heating chamber 8. The heated object to be heated is optimally heated.

また、マイクロ波発生部1には主に増幅部5a、5bに備えた半導体素子の発熱を放熱させる放熱手段(図示していない)を配する。   The microwave generator 1 is provided with a heat radiating means (not shown) for radiating heat generated by the semiconductor elements provided mainly in the amplifiers 5a and 5b.

以上のように構成されたマイクロ波処理装置について、以下その動作、作用を説明する。   About the microwave processing apparatus comprised as mentioned above, the operation | movement and an effect | action are demonstrated below.

まず被加熱物を加熱室8に収納し、その加熱条件を操作部(図示していない)から入力し、加熱開始キーを押す。加熱開始信号を受けた制御部10の制御出力信号によりマイクロ波発生部1が動作を開始する。制御手段10は、駆動電源(図示していない)を動作させて発振部2に電力を供給する。この時、発振部2の初期の発振周波数は、たとえば2400MHzに設定する電圧信号を供給し、発振が開始する。   First, the object to be heated is stored in the heating chamber 8, the heating condition is input from an operation unit (not shown), and the heating start key is pressed. In response to the control output signal of the control unit 10 that has received the heating start signal, the microwave generation unit 1 starts operating. The control means 10 operates a drive power supply (not shown) to supply power to the oscillation unit 2. At this time, the initial oscillation frequency of the oscillation unit 2 is supplied with a voltage signal set to 2400 MHz, for example, and oscillation starts.

発振部2を動作させると、その出力は電力分配部3にて略1/2分配され、2つのマイクロ波電力信号となる。以降、駆動電源を制御して増幅部5a、5bを動作させる。   When the oscillating unit 2 is operated, its output is distributed approximately by the power distributing unit 3 and becomes two microwave power signals. Thereafter, the drive power supply is controlled to operate the amplifying units 5a and 5b.

そしてそれぞれのマイクロ波電力信号は並列動作する増幅部5a、5b、電力検知部6a、6bを経て給電部7a、7bにそれぞれ出力され加熱室8内に放射される。このときの各主増幅部はそれぞれ100W未満、たとえば50Wのマイクロ波電力を出力する。   The microwave power signals are output to the power feeding units 7 a and 7 b through the amplification units 5 a and 5 b and the power detection units 6 a and 6 b that operate in parallel, and are radiated into the heating chamber 8. Each main amplifying unit at this time outputs microwave power of less than 100 W, for example, 50 W.

加熱室8内に供給されるマイクロ波電力が被加熱物に100%吸収されると加熱室8からの反射電力は無しになるが、被加熱物の種類・形状・量が被加熱物を含む加熱室8の電気的特性を決定し、マイクロ波発生部1の出力インピーダンスと加熱室8のインピーダンスとに基づいて、加熱室8側からマイクロ波発生部1側に伝送する反射電力が生じる。   When 100% of the microwave power supplied into the heating chamber 8 is absorbed by the object to be heated, the reflected power from the heating chamber 8 is eliminated, but the type, shape, and amount of the object to be heated include the object to be heated. The electrical characteristics of the heating chamber 8 are determined, and reflected power transmitted from the heating chamber 8 side to the microwave generating unit 1 side is generated based on the output impedance of the microwave generating unit 1 and the impedance of the heating chamber 8.

電力検出器6a、6bは、マイクロ波発生部1側に伝送する反射電力を検出し、その反射電力量に比例した信号を検出するものであり、その検出信号を受けた制御部10は、反射電力が極小値となる発振周波数および位相差の選択を行う。この周波数、位相差の選択に対して、制御部10は、位相可変部4a、4bによって生じる位相差を0度の状態で発振部2の発振周波数を初期の2400MHzから例えば1MHzピッチで高い周波数側に変化させ、周波数可変範囲の上限である2500MHzに到達すると、位相可変部4a、4bによって生じる位相差を例えば30度に変更し、今度は周波数可変範囲の上限である2500MHzから1MHzピッチで低周波側に変化させる。発振周波数が2400MHzに達すると再び位相可変部4a、4bの出力の位相差を変化(例えば60度)させ、再び発振部2の発振周波数を2400MHzから2500MHzに向かって変化させる。この操作を行うことで制御部10は発振部2の発振周波数と位相可変部4a、4bの位相差に対する反射電力の配列を得ることができる。制御部10はこの反射電力が最も小さくな
る発振部2および位相可変部4a、4bの位相差の条件で制御するとともに発振出力を入力された加熱条件に対応した出力が得られるように制御する。これにより、各増幅部5a、5bはそれぞれ所定のマイクロ波電力を出力する。そして、それぞれの出力は給電部7a、7bに伝送され加熱室8内に放射される。
The power detectors 6a and 6b detect the reflected power transmitted to the microwave generation unit 1 and detect a signal proportional to the amount of reflected power. The control unit 10 receiving the detection signal Select the oscillation frequency and phase difference at which the power is minimal. In response to the selection of the frequency and the phase difference, the control unit 10 increases the oscillation frequency of the oscillation unit 2 from the initial 2400 MHz, for example, at a 1 MHz pitch, with the phase difference generated by the phase variable units 4a and 4b being 0 degrees. The phase difference generated by the phase variable units 4a and 4b is changed to, for example, 30 degrees, and this time, the upper limit of the frequency variable range is changed from 2500 MHz to 1 MHz pitch. Change to the side. When the oscillation frequency reaches 2400 MHz, the phase difference between the outputs of the phase variable units 4a and 4b is changed again (for example, 60 degrees), and the oscillation frequency of the oscillation unit 2 is changed again from 2400 MHz to 2500 MHz. By performing this operation, the control unit 10 can obtain an array of reflected power with respect to the oscillation frequency of the oscillation unit 2 and the phase difference between the phase variable units 4a and 4b. The control unit 10 controls the oscillation unit 2 and the phase variable units 4a and 4b having the smallest reflected power under the phase difference condition and controls the oscillation output so as to obtain an output corresponding to the input heating condition. Thereby, each amplification part 5a, 5b outputs predetermined microwave electric power, respectively. Each output is transmitted to the power feeding units 7 a and 7 b and radiated into the heating chamber 8.

このように動作することで様々な形状・大きさ・量の異なる被加熱物に対しても反射電力が最も小さくなる条件で加熱を開始することができ、増幅部5a、5bに備えられた半導体素子が反射電力によって過剰に発熱することを防止でき熱的な破壊を回避することができる。   By operating in this way, heating can be started under the condition that the reflected power is minimized even for objects to be heated having various shapes, sizes, and quantities, and the semiconductors provided in the amplification units 5a and 5b It is possible to prevent the element from excessively generating heat due to the reflected power and to avoid thermal destruction.

図2は加熱動作中における位相可変部4a、4bの位相差および発振部2の発振周波数の制御例を示すフローチャートである。はじめに位相差Φで位相可変部4a、4bが位相差を生じている状態で動作している状態からΔΦ(例えば5度)位相差をずらした状態に制御する。このとき電力検出部6a、6bは反射電力を各々計測し制御部10にその反射電力量に応じた信号を伝送する。制御部10は前回に計測した反射電力と今回計測した反射電力を比較し、反射電力が減少していればΔΦをそのままとし、反射電力が増加していればΔΦの符号を逆にする。このようにすることによって位相差Φの変化に対して反射電力が減少する方向に常に制御することができる。また、発振周波数fについても同じような操作、すなわちある発振周波数fで発振部2が発振している状態でΔf(例えば0.1MHz)発振周波数をずらした状態に制御し、そのときの反射電力を計測する。制御部10はこの反射電力と前回(発振周波数を変化させる前に)計測した反射電力を比較し、反射電力が減少していればΔfをそのままの値とし、反射電力が増加していればΔfの符号を逆にする。この操作によって発振周波数の変化に対して反射電力が常に減少する方向で制御することができる。   FIG. 2 is a flowchart showing a control example of the phase difference of the phase variable units 4a and 4b and the oscillation frequency of the oscillation unit 2 during the heating operation. First, control is performed so that the phase difference is shifted by ΔΦ (for example, 5 degrees) from the state in which the phase variable units 4a and 4b are operating in a state where the phase difference is caused by the phase difference Φ. At this time, the power detection units 6 a and 6 b each measure the reflected power and transmit a signal corresponding to the amount of reflected power to the control unit 10. The control unit 10 compares the reflected power measured last time with the reflected power measured this time. If the reflected power decreases, ΔΦ is left as it is, and if the reflected power increases, the sign of ΔΦ is reversed. By doing so, it is possible to always control the reflected power to decrease in response to the change in the phase difference Φ. Also, the oscillation frequency f is controlled in the same manner, that is, the oscillation frequency is shifted by Δf (for example, 0.1 MHz) while the oscillation unit 2 is oscillating at a certain oscillation frequency f, and the reflected power at that time is controlled. Measure. The control unit 10 compares this reflected power with the reflected power measured last time (before changing the oscillation frequency). If the reflected power is reduced, Δf is set as it is, and if the reflected power is increased, Δf. The sign of is reversed. By this operation, the reflected power can be controlled to always decrease with respect to the change of the oscillation frequency.

このように制御することで、加熱動作中においても電力検出部6a、6bは加熱室8からの反射電力を検出できるので、制御部10がこれを判断し、発振周波数および位相差を時々刻々微調整し常に反射電力が低い状態を維持できるのでさらに半導体素子の発熱を低く抑えることが可能となり、加熱効率を高く維持できるので短時間での加熱を図ることができる。あるいは、許容する反射電力を所定の値に定めその許容する反射電力の範囲において制御部10は時間的に位相可変部4a、4bの位相差と発振部2の発振周波数を変化させることもできる。このような動作をすることで加熱室8内でのマイクロ波の伝播状態を時間的に変化させることができるので、被加熱物の局所加熱を解消し、加熱の均一化を図ることも可能である。   By controlling in this way, the power detection units 6a and 6b can detect the reflected power from the heating chamber 8 even during the heating operation, so the control unit 10 determines this and minutely determines the oscillation frequency and phase difference. Since the state where the reflected power is always kept low can be adjusted, the heat generation of the semiconductor element can be further suppressed, and the heating efficiency can be maintained high, so that heating in a short time can be achieved. Alternatively, the allowable reflected power is set to a predetermined value, and the control unit 10 can temporally change the phase difference between the phase variable units 4a and 4b and the oscillation frequency of the oscillating unit 2 within the allowable reflected power range. By performing such an operation, the propagation state of the microwave in the heating chamber 8 can be changed with time, so that local heating of the object to be heated can be eliminated and the heating can be made uniform. is there.

なお、本実施の形態においては、位相可変部は2つ挿入した例で説明したが、電力分配部3のいずれかの出力にのみ挿入し、その位相変化幅を0度から360度となるように構成することもできる。   In the present embodiment, an example in which two phase variable units are inserted has been described. However, the phase change unit is inserted only into one of the outputs of the power distribution unit 3 so that the phase change width is 0 degrees to 360 degrees. It can also be configured.

以上のように、本発明にかかるマイクロ波処理装置は複数の給電部を有しマイクロ波を放射する給電部を切り替え制御したり動作中の給電部間のマイクロ波の位相差を変化させる装置を提供できるので、電子レンジで代表されるような誘電加熱を利用した加熱装置や生ゴミ処理機、あるいは半導体製造装置であるプラズマ電源のマイクロ波電源などの用途にも適用できる。   As described above, the microwave processing apparatus according to the present invention includes a device that has a plurality of power supply units, controls the power supply units that radiate microwaves, and changes the microwave phase difference between the power supply units in operation. Since it can be provided, it can be applied to applications such as a microwave power source of a plasma power source that is a heating device, a garbage disposal machine, or a semiconductor manufacturing device using dielectric heating as typified by a microwave oven.

本発明の実施の形態1におけるマイクロ波処理装置の構成図Configuration diagram of microwave processing apparatus according to Embodiment 1 of the present invention 同マイクロ波処理装置の位相差、発振周波数の制御例を示すフローチャートFlow chart showing control example of phase difference and oscillation frequency of the microwave processing apparatus

符号の説明Explanation of symbols

1 マイクロ波発生部
2 発振部
3 電力分配部
4a、4b 位相可変部
5a、5b 増幅部
6a、6b 電力検出部
7a、7b 給電部
8 加熱室
10 制御部
DESCRIPTION OF SYMBOLS 1 Microwave generation part 2 Oscillation part 3 Power distribution part 4a, 4b Phase variable part 5a, 5b Amplification part 6a, 6b Electric power detection part 7a, 7b Feeding part 8 Heating chamber 10 Control part

Claims (6)

被加熱物を収納する加熱室と、発振部と、前記発振部の出力を複数に分配して出力する電力分配部と、前記電力分配部の出力の位相を可変する位相可変部と、前記位相可変部の出力をそれぞれ電力増幅する増幅部と、前記増幅部の出力を前記加熱室に供給する複数の給電部と、前記発振部の発振周波数と前記位相可変部の位相量を制御する制御部とを備え、前記複数の給電部は前記加熱室を構成する壁面の異なる複数の壁面に配置するとともに、前記制御部は前記給電部から放射されるマイクロ波の位相差と周波数を制御する構成としたマイクロ波処理装置。 A heating chamber that houses an object to be heated, an oscillation unit, a power distribution unit that distributes and outputs the output of the oscillation unit, a phase variable unit that varies the phase of the output of the power distribution unit, and the phase An amplifying unit that amplifies the output of each variable unit, a plurality of power feeding units that supply the output of the amplifying unit to the heating chamber, and a control unit that controls the oscillation frequency of the oscillating unit and the phase amount of the phase varying unit The plurality of power feeding units are arranged on a plurality of different wall surfaces constituting the heating chamber, and the control unit controls a phase difference and a frequency of microwaves radiated from the power feeding unit, and Microwave processing equipment. 増幅部の出力を給電部に伝送する複数の伝送路に各々電力検出部を設け、前記給電部から前記増幅部に反射される反射電力を検出するとともに、制御部は前記反射電力が最小となる周波数および位相差に位相可変部および発振部を制御する構成とした請求項1に記載のマイクロ波処理装置。 A power detection unit is provided in each of a plurality of transmission paths that transmit the output of the amplification unit to the power supply unit, detects reflected power reflected from the power supply unit to the amplification unit, and the control unit minimizes the reflected power. The microwave processing apparatus according to claim 1, wherein the phase variable unit and the oscillation unit are controlled by a frequency and a phase difference. 制御部は加熱室に収容された被加熱物を加熱処理する前段階で、加熱処理するマイクロ波の電力よりも低い電力で反射電力が最小となる周波数および位相差を検出する予備動作をする構成とした請求項2に記載のマイクロ波処理装置。 The control unit is configured to perform a preliminary operation to detect a frequency and phase difference at which reflected power is minimized at a power lower than the power of the microwave to be heat-treated before the object to be heated is heat-treated. The microwave processing apparatus according to claim 2. 制御部は加熱室に収容された被加熱物を加熱処理する際、電力検出部が検出する反射電力が所定の反射電力以下となるように位相可変部の位相量と発振部の発振周波数を可変制御する構成とした請求項2または3に記載のマイクロ波処理装置。 When the control unit heats the object to be heated contained in the heating chamber, the phase amount of the phase variable unit and the oscillation frequency of the oscillating unit are variable so that the reflected power detected by the power detection unit is equal to or lower than the predetermined reflected power. The microwave processing apparatus according to claim 2 or 3 configured to be controlled. 制御部は加熱室に収容された被加熱物を加熱処理する際、電力検出部が検出する反射電力が常に最低値となるように位相可変部の位相量と発振部の発振周波数を可変制御する構成とした請求項2または3に記載のマイクロ波処理装置。 The control unit variably controls the phase amount of the phase variable unit and the oscillation frequency of the oscillation unit so that the reflected power detected by the power detection unit is always the lowest value when the object to be heated housed in the heating chamber is heated. The microwave processing apparatus according to claim 2 or 3, wherein the microwave processing apparatus is configured. 位相可変部の位相変化量および発振部の発振周波数の変化量は、被加熱物を加熱処理する際と加熱処理前に反射電力が最小値となる位相量および発振周波数を検索する予備動作時で異なるものとした請求項2から5のいずれか1項に記載のマイクロ波処理装置。 The amount of phase change of the phase variable unit and the amount of change of the oscillation frequency of the oscillating unit are the values when the object to be heated is heat-treated and during the preliminary operation for searching for the phase amount and oscillation frequency at which the reflected power becomes the minimum value before the heat treatment The microwave processing apparatus according to any one of claims 2 to 5, wherein the microwave processing apparatus is different.
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