JP2008266728A - Vacuum deposition device and vacuum deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To continuously form a fluoride thin film of magnesium fluoride or the like having reduced optical absorption of visible light and having satisfactory adhesion on a plastic base material by a vacuum deposition process at a high speed and also at an extremely stable film deposition rate. <P>SOLUTION: The vacuum deposition device within a vacuum tank (1) is provided with: an unwinding part (2) continuously unwinding a plastic film (2); a winding part (3) winding the plastic film (4) unwound from the unwinding part (2); a main roll (5) arranged between the unwinding part (2) and the winding part (3); a vapor deposition material (6) composed of a solid material having high material density and fine vacancies or a granule material having high pack density or a mixed material of the solid material and the granule material, also comprising a fluoride essentially consisting of magnesium fluoride and also arranged so as to be confronted with the main roll (5); an electron gun (7) emitting an electron beam to the evaporation material (6); and a feeding means continuously feeding the vapor deposition material (6). <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vacuum deposition apparatus and a vacuum deposition method for depositing an optical thin film made of a fluoride mainly composed of magnesium fluoride by a deposition method.

  In an optical display device such as a CRT, a liquid crystal display device, or a plasma display panel (PDP), there is a problem that it becomes difficult to recognize an image due to reflection of external light on a display screen. In recent years, optical display devices have been increasingly taken not only indoors but also outdoors, and the reflection of external light on the display screen has become a more serious problem.

  In order to reduce reflection of external light, an antireflection laminate having a low reflectance over a wide range of wavelengths in the visible light region is provided on the front surface of the optical display device. Conventionally, in the case of forming an optical thin film such as an antireflection film, a half mirror, or an edge filter, a vacuum deposition method is often used in view of easiness of the method and a high film formation speed.

  However, when a fluoride thin film such as magnesium fluoride, which is a typical low-refractive index optical thin film, is formed by an ordinary vacuum deposition method, the film density decreases when the film is formed at a low substrate temperature. However, there are also problems such as vacancies easily occurring in the film and changes in optical characteristics due to the influence of humidity in the atmosphere. In addition, such a film has a problem that the film strength is insufficient, the scratching property is weak, and the adhesion between the film and the substrate is lowered.

  For this reason, in order to solve such a problem, a method of forming a film by heating the substrate to about 300 ° C. is usually used. However, when a film is formed on a plastic film used as a polarizing plate of a liquid crystal panel or an antireflection member on the surface, high heat cannot be applied to the substrate, and further improvement is necessary.

  Therefore, as a method of forming a fluoride thin film such as magnesium fluoride without heating the base material, a method of forming a film by vapor deposition while irradiating the substrate with an electron beam is disclosed (see, for example, Patent Document 1). ).

Further, as a film forming method different from the vapor deposition method, there is a method using a sputtering method. Here, by the sputtering MgF ₂ absorption of visible light occurs, it forms a little low refractive index film of the light absorption or the like disclosed by sputtering a material obtained by adding Si to the MgF ₂ as a target (See, for example, Patent Document 2).

Furthermore, a technique is disclosed in which a plasma gun is arranged between an evaporation source and a substrate in a gas introduction environment such as Ar, O ₂ , a high voltage is applied to the plasma gun to form plasma, and evaporated particles are ionized in the plasma. (For example, refer to Patent Document 3).
JP-A-6-10401 JP-A-4-223401 JP-A-9-61603

  However, in the above conventional example, the substrate is basically heated, a bias is applied to the substrate by a technique such as ionization of evaporated particles, or the particles are accelerated and incident, or the substrate is assisted by electron beam irradiation. In these methods, the energy supply for enhancing the film density and adhesion is promoted by promoting the migration of the vapor deposition particles on the substrate surface, but has the following drawbacks.

  That is, when the substrate is heated, it cannot be applied to a base material such as a plastic film having a low heat-resistant temperature. Further, as a method for forming a substrate without heating, a method of ionizing evaporated particles such as a sputtering method is easy to dissociate a deposit such as magnesium fluoride into a metal such as Mg and F, and F is present in the film. There is a drawback in that absorption of visible light occurs due to lack.

In the conventional vapor deposition method, the material is heated to the evaporation temperature by using an electron beam or resistance heating when the material is heated. In the case of a material containing magnesium fluoride (MgF ₂ ), the particle size is 1 to 1. Granules of about 3 mm are used, and the density of the material is relatively coarse and easy to fly, but the melted material does not spread uniformly, creating a temperature difference within the material, or the material such as the granule partially dissolves. Splash is generated when it collapses and the film formation rate is difficult to stabilize, and it is difficult to perform continuous and stable film formation on a film using winding film formation.

  Furthermore, in order to obtain a large-area film, roll-to-roll film formation using an apparatus that continuously forms films on a film such as a roll-up film formation apparatus, the film formation rate over time in the conventional vapor deposition method However, even if film formation is performed while monitoring the film thickness of a thin film deposited with a film thickness meter, it is difficult to control the film thickness due to the drastic change in the evaporation rate from the evaporation source. It was unsuitable for industrial production of optical thin film members such as films.

  The present invention has been made in view of the above-described drawbacks, and a fluoride thin film such as magnesium fluoride having low optical absorption of visible light and good adhesion is formed at high speed on a plastic substrate by a vacuum deposition method. Further, it is an object to continuously form the film at a very stable film formation rate.

In order to solve the above problems in the present invention, first, in the invention of claim 1,
In a vacuum deposition apparatus for depositing the deposition material on a plastic film by irradiating the deposition material with an electron beam in a vacuum chamber using an electron gun,
The vacuum chamber includes at least an unwinding unit that continuously unwinds the plastic film,
A winding unit for winding the plastic film unwound from the unwinding unit;
A main roll disposed between the unwinding unit and the winding unit;
A solid material having a high material density and fine pores, a granular material having a high packing density, or a mixed material of the solid material and the granular material, and a fluoride mainly composed of magnesium fluoride. And a deposition material disposed opposite to the main roll,
An electron gun for irradiating the vapor deposition material with an electron beam;
Supply means for continuously supplying the vapor deposition material;
A vacuum vapor deposition apparatus characterized by comprising:

In the invention of claim 2,
2. The vacuum deposition apparatus according to claim 1, wherein the vapor deposition material has a porosity of 5% to 50% and an average pore diameter of 0.1 μm to 100 μm. .

In the invention of claim 3,
The vacuum chamber is
Temperature measuring means for measuring and outputting the temperature of the vapor deposition material;
Control means for controlling the output of the electron beam or the transport speed of the plastic film based on the output of the temperature measuring means;
The vacuum evaporation apparatus according to claim 1 or 2, wherein the vacuum evaporation apparatus is provided.

In the invention of claim 4,
The antireflection film is formed using the vacuum vapor deposition apparatus according to any one of claims 1 to 3.

In the invention of claim 5,
In a vacuum vapor deposition method of irradiating an electron beam on a vapor deposition material in a vacuum chamber using an electron gun and forming the vapor deposition material on a plastic film,
The vacuum chamber includes an unwinding unit that continuously unwinds the plastic film, a winding unit that winds up the plastic film unwound from the unwinding unit, and the unwinding unit and the winding unit. A main roll disposed between, a vapor deposition material disposed opposite to the main roll, an electron gun for irradiating the vapor deposition material with an electron beam, and a supply means for continuously supplying the vapor deposition material,
An unwinding step of continuously unwinding the plastic film from the unwinding portion;
Next, it is a solid material having a high material density and fine pores, a granular material having a high packing density, or a mixed material of the solid material and the granular material, and mainly composed of magnesium fluoride. The vapor deposition material containing fluoride, opposed to the main roll, and continuously supplied by the supply means is irradiated with an electron beam using the electron gun, and the electron beam on the main roll is irradiated with the electron beam. A film forming step of forming the vapor deposition material on a plastic film;
Next, a winding process for continuously winding the plastic film from the winding unit;
It is set as the vacuum evaporation method characterized by including.

In the invention of claim 6,
6. The vacuum vapor deposition method according to claim 5, wherein the vapor deposition material has a porosity of 5% or more and 50% or less and an average pore diameter of 0.1 μm or more and 100 μm or less. .

In the invention of claim 7,
A temperature measuring unit that measures and outputs the temperature of the vapor deposition material; and a control unit that controls the output of the electron beam or the transport speed of the plastic film based on the output of the temperature measuring unit. Prepared,
Using the temperature output means to measure and output the temperature of the vapor deposition material; and
Controlling the output of the electron beam or the transport speed of the plastic film based on the output of the temperature measuring means using the control means;
The vacuum deposition method according to claim 5 or 6, wherein the vacuum deposition method is included.

In the invention of claim 8,
An antireflection film formed by using the vacuum vapor deposition method according to claim 5.

  The effects of the inventions of claims 1 and 5 will be described below.

  When a solid material having a high material density and fine vacancies is used for the vapor deposition material, the solid material melted by the electron beam dissolves into the fine vacancies at the same time as it melts, and does not flow irregularly. By maintaining a uniform surface temperature, stable film formation becomes possible.

  In addition, when a granular material with a high packing density is used as the vapor deposition material, the granular material dissolved by the electron beam dissolves into the gaps between the granules, which are moderately narrowed at the same time as melting, and does not flow irregularly. By maintaining a uniform surface temperature, stable film formation becomes possible. A granular material having a high packing density can be obtained by filling a granular material having an average particle diameter of 0.1 to 1 mm at a high density so that the bulk density is 70% or more and placing the granular material in a crucible or the like.

  Therefore, a solid material having a high material density and fine pores, a granular material having a high packing density, or a vapor deposition material that is a mixed material of the solid material and the granular material is applied to the electron beam irradiation part. When supplied continuously, it is possible to stably hold the material evaporation part for a long time, and even when forming a film on a large area plastic film such as roll-to-roll, the fluoride is stable for a long time. A thin film can be supplied.

  As described above, the first and fifth aspects of the present invention provide a high-speed and extremely stable fluoride thin film of magnesium fluoride or the like having good optical adhesion and low adhesiveness on a plastic substrate. There is an effect that the film is continuously formed at the film forming speed.

  The effects of the inventions of claims 2 and 6 will be described below.

  When the porosity of the vapor deposition material is less than 5%, the dissolved material weakly flows into the voids between the fine pores and granules and flows down. On the other hand, when the porosity of the vapor deposition material is larger than 50%, the shape of the vapor deposition material cannot be maintained and becomes unstable.

  When the average pore diameter of the vapor deposition material is less than 0.1 μm, the dissolved material weakly flows into the voids between the fine pores and granules and flows down. On the other hand, if the average pore size of the vapor deposition material is larger than 100 μm, the shape of the vapor deposition material cannot be maintained and becomes unstable.

  As described above, the inventions of claim 2 and claim 6 are high-speed and extremely stable by vacuum deposition of a fluoride thin film such as magnesium fluoride having a good optical adhesion of visible light and good adhesion on a plastic substrate. Thus, there is an effect that it is possible to more reliably perform continuous formation at the film forming speed.

  Further, the inventions of claims 3 and 7 measure the temperature of the vapor deposition material and control the transport speed of the electron beam and the plastic film based on the temperature, so that the temperature can be set to a predetermined value. Thus, there is an effect that continuous film formation of a large area film can be performed.

  Further, the inventions according to claims 4 and 8 have an effect that a large amount of antireflection films having low reflectance and optical absorptance can be provided at a low price over a wide range of wavelengths in the visible light region.

  The best mode for carrying out the present invention will be described with reference to the drawings.

  As shown in FIG. 1, the vacuum deposition apparatus of the present invention is disposed opposite to the main roll 5 and the main roll 5 that can continuously supply the unwinding section 2 and the winding section 3 and the plastic film 4 into the vacuum chamber 1. A high-density vapor deposition material 6 and an electron gun 7 are installed toward the vapor deposition material 6.

  The vacuum chamber 1 is connected to an evacuation system such as a vacuum pump through a pipe connection portion (not shown), and the inside thereof is evacuated to a predetermined degree of vacuum. The internal space of the vacuum chamber 1 is partitioned by a partition plate into a chamber in which the unwinding unit 2 and the winding unit 3 are disposed and a chamber in which the vapor deposition material 6 is disposed.

(Plastic film)
The plastic film 4 in the present invention is a long film cut to a predetermined width, and specific examples thereof include polyethylene terephthalate (PET), polyethersulfone (PES), polystyrene (PS), polyethylene. Polyamide (PA) such as naphthalate (PEN), polyarylate (PAR), polyetheretherketone (PEEK), polycarbonate (PC), polyethylene (PE), polypropylene (PP), nylon 6, polyimide (PI), tri Cellulosic resin films such as acetyl cellulose (TAC), fluorinated resins such as polyurethane (PUR) and polytetrafluoroethylene, vinyl compounds such as polyvinyl chloride (PVC), polyacrylic acid (PMMA), polyacrylic acid esters, Polyacrylo Addition polymer of tolyl, vinyl compound, vinylidene compound such as polymethacrylic acid, polymethacrylic ester, polyvinylidene chloride, vinyl compound such as vinylidene fluoride / trifluoroethylene copolymer, ethylene / vinyl acetate copolymer or fluorine Examples of such compounds include, but are not limited to, copolymers of polyethylene compounds, polyethers such as polyethylene oxide, epoxy resins, polyvinyl alcohol (PVA), and polyvinyl butyral.

(Each roll)
The plastic film 4 is unwound from the unwinding unit 2 and is wound around the winding unit 3 via a plurality of guide rollers, a main roll 5, an auxiliary roller, and a plurality of guide rollers. Each is provided with a rotation drive.

(Main roll)
The main roll 5 is cylindrical and made of metal such as stainless steel, and is provided with a temperature adjusting mechanism such as a warm refrigerant circulation system. A plastic film 4 is wound around the peripheral surface of the main roll 5 at a predetermined holding angle. The plastic film 4 wound around the main roll 5 is cooled or heated by the main roll 5 at the same time as the film forming surface on the outer surface side is formed with the evaporation material.

(Evaporation material components)
The vapor deposition material 6 in this invention is arrange | positioned under the main roll 5, discharge | releases vapor deposition material on the plastic film 4 closely_contact | adhered to the main roll 5 which opposes, and forms an optical thin film. The vapor deposition material is fluoride.

As a fluoride as a vapor deposition material, magnesium fluoride is a main raw material, and other AlF ₃ , LiF, NaF, CaF ₂ , SrF ₂ , BaF ₂ , CeF ₃ , NdF ₃ , LaF ₃ , SmF ₃ , Na ₃ AlF ₆ , Of Na ₅ Al ₃ F1 ₄ , one or more can be selected and used, but the present invention is not limited to these. However, since a film having high durability against changes in temperature and humidity can be obtained, it is preferable to use a target mainly composed of MgF ₂ .

(Vapor deposition material form)
The form of the vapor deposition material in the present invention can continuously supply a solid material having a high material density and fine pores, a granular material having a high packing density, or a mixed material of the solid material and the granular material. The crucible is filled. A granular material having a high packing density can be obtained by filling a granular material having an average particle diameter of 0.1 to 1 mm at a high density so that the bulk density is 70% or more and placing the granular material in a crucible or the like. Further, the form of the vapor deposition material is preferably such that the porosity is 5 to 50% and the average pore diameter is 0.1 to 100 μm.

  For example, powders or pulverized materials made of the above-mentioned fluorides are put into a specific mold, solidified by heating, compression, etc., or particles that fill the gaps between the granules It is preferable to install a material filled with small diameter granules or powder. More preferably, a material having a high density and small pores and a sufficient hardness, such as a sintered body material, can be used.

  When evaporating these materials by an electron beam evaporation method using an electron gun, it is preferable to fill the evaporation material in a container such as a crucible so that there is no gap. More preferably, the material in the crucible has a uniform porosity of 10 to 40% and a pore diameter of 0.5 to 10 μm.

(Other heating methods)
In order to more actively control the material temperature, a heater 8 for heating the target can be separately provided. By providing a heating means with good controllability apart from the electron beam, the material temperature can be maintained at a constant temperature easily and accurately. The heater referred to here is not particularly limited, for example, a resistance heater or an infrared heater. Moreover, you may use combining the temperature control by a heater, and feedback control to input electric power and winding speed.

  In addition, a thermometer 9 is installed to measure the surface temperature of the vapor deposition material, and the temperature of the vapor deposition material 6 can be measured by taking the temperature data into a data processing apparatus installed outside the vacuum chamber 1. ing. Furthermore, the vapor deposition material 6 is continuously supplied by rotation and movement of the crucible. The output of the thermometer 9 becomes an input of the control circuit device, and is fed back to an electron beam output or a winding speed output connected to the output of the control circuit device. Therefore, the output of the electron beam and the winding speed can be controlled by the control circuit device so that the temperature of the vapor deposition material 6 becomes a predetermined value.

(Temperature measurement method)
Examples of the thermometer in the present invention include, but are not limited to, an infrared radiation thermometer, an infrared camera, and a thermocouple.

(Vapor deposition material supply method)
As a method for continuously supplying the vapor deposition material in the present invention, a hearth liner made of Cu, Mo, BN, W or the like in a linear shape or a ring shape can be cited. When the ring-shaped hearth 12 is used as shown in FIG. 2, the electron beam irradiated from the electron gun 7 hits a specific portion of the hearth 12 and heats and evaporates the vapor deposition material in the hearth 12. By rotating at a constant speed around the center of the hearth 12 (see the arrow in FIG. 2), a fresh vapor deposition material can be fed into the electron beam irradiation section. If the supply speed of the vapor deposition material is too slow, the dissolution state is likely to change, and a wide range of materials will melt and easily cause material collapse.If it is too early, the material will not warm sufficiently, causing splash and film defects. The speed suitable for the dissolved state of the material is required. For example, with MgF ₂ , a material supply rate of 0.3 to 1.0 cm / min is preferable for application of an electron beam of 5 kV and 30 mA with an irradiation area of approximately 20 mmφ.

(Spectral sensitivity sensor, shutter)
In the film conveyance process in the present invention, the spectral sensitivity sensor 10 may be installed so that visible light transmittance and reflectance can be monitored. Based on the transmittance and reflectance data of this sensor, the thickness of the thin film on the film is measured to confirm the stability of the deposition rate, and it is fed back to the electron beam output and winding speed output. . In addition, the main drum 5
A shutter 11 that can be freely opened and closed may be provided between the evaporation material 6 and the evaporation material 6. The shutter 11 prevents the vapor deposition component having a small adhesion energy and low density from adhering to the film on the main drum 5 when the vapor deposition material 6 is not sufficiently heated at the initial stage of film formation. It is useful for forming a film at a stable rate without using an excess film after sufficiently heated.

  Examples of the present invention will be specifically described below.

<Example 1>
In the apparatus shown in FIG. 1, a polyethylene terephthalate (PET) film having a thickness of 100 μm was placed in the vacuum chamber 1, and then the vacuum chamber 1 was evacuated to 5 × 10 ⁻⁴ Pa by a vacuum pump (not shown). At this time, the PET film is cooled to 10 ° C. by the cooling water in the main roll 5.

  As the vapor deposition material 6, a magnesium fluoride sintered material having a porosity of 20% and an average pore diameter of 1.0 μm was used. The sintered body material was placed on the ring-shaped hearth 12 without any gap, and an electron beam was irradiated by the electron gun 7. Further, the input power of the electron beam 7 was controlled so that the temperature of the vapor deposition material 6 measured by the infrared radiation thermometer 9 was maintained at 1050 ° C. At this time, the input power was about 20 to 30 mA with an acceleration voltage of 5 kV. Here, when the main roll 5 is rotated to continuously flow the PET film and the shutter 11 is opened, a magnesium fluoride film is formed on the PET film. The film thickness and film formation speed were monitored by the spectral sensitivity sensor 10, and the rotation speed of the main roll 5 was determined so that the film thickness of the magnesium fluoride film formed on the PET film substrate was 100 nm as a physical film thickness. . The drum conveyance speed at this time was 5.5 m / min. Further, the ring hearth 12 containing the magnesium fluoride sintered body material was continuously supplied while rotating at a speed of 0.6 cm / min.

<Example 2>
Using the same vacuum vapor deposition apparatus and substrate film as in Example 1, as shown in FIG. 3, a magnesium fluoride sintered body material having a porosity of 20% and an average pore diameter of 1.0 μm as a vapor deposition material 6 The pellets 13 were arranged in the ring-shaped hearth 12. Further, a granular magnesium fluoride material 14 having an average particle diameter of 0.2 to 0.5 mmφ was filled so as to fill the voids between the pellets, the material was filled in the hearth, and the electron gun 7 was irradiated to form a film. .

  The deposition rate (dynamic deposition rate) at this time is as high as about 500 nm · m / min, and the deposition material temperature, the deposition rate, and the optical reflection characteristics of the film measured by the spectral sensitivity sensor 10 are about 1 hour. It was stable.

  The refractive indices of the magnesium fluoride films obtained in Examples 1 and 2 thus obtained were 1.38, which was as low as that obtained by the resistance heating vapor deposition method. As shown in FIG. 4, the spectral reflectance of the magnesium fluoride film was 2% or less in the visible region (wavelength 400 to 700 nm), which was effective as an antireflection film. Further, the light absorption of the film in the visible region was 0.5% or less, which was as low as that obtained by the resistance heating vapor deposition method, and there was no optical problem. Although the film was formed 100 m under the same conditions, there was no difference in the optical performance and durability of the film measured every 5 m, and it was confirmed that the film was sufficiently reproducible.

<Comparative Example 1>
An optical thin film was formed on a PET film using the same vacuum vapor deposition apparatus as in Example 1. In this comparative example, the ring-shaped hearth 12 was filled using a granular magnesium fluoride material having a particle size of 1.0 to 5.0 mmφ as the vapor deposition material. At this time, the material porosity was 65%, and the average pore diameter was 0.
It was 3 mm. Other than this, a 100 m film was formed under the same conditions as in Example 1.

  The film formation speed (dynamic deposition rate) at this time was not stable at 300 to 500 nm · m / min, and the film formation speed and the optical reflection characteristics of the film measured by the spectral sensitivity sensor 10 were not stable. Furthermore, the occurrence of splash was observed from the electron beam irradiated part, and the film adhered to the film surface to generate a defect. In addition, the film characteristics measured every 5 m after film formation were poor in reproducibility because some of the film adhesion strength deteriorated.

<Comparative example 2>
Using the same vacuum deposition apparatus as in Example 1, an electron beam is applied using magnesium fluoride in which a granular material is dissolved and condensed in the ring hearth 12 as a deposition material, and the ring hearth 12 is rotated to supply the material. The film was formed on a PET film. The porosity of this material was less than 5%, and there was almost no void in the material. At this time, the melted area of the electron beam irradiation part was not constant over time, and the rate was unstable over time. Furthermore, the material melted by the electron beam irradiation flowed and diffused in the hearth during evaporation, and splash was generated, so that the film after film formation had many defects.

<Example 3>
In Examples 1 and 2 of the present invention, an example in which a single-layer antireflection film of magnesium fluoride is formed has been shown. However, in combination with other high refractive index layers, etc., a multilayer antireflection film, a half mirror, an edge A filter or the like can be formed. Here, as an example, an example of a four-layer antireflection film having the film configuration shown in Table 1 is shown.

In this example, a TiO ₂ layer and an MgF ₂ layer were alternately formed on a PET film with a film thickness shown in Table 1. Here, the MgF ₂ layer was formed by the same method as in Example 1, and the TiO ₂ layer, which is a high refractive index layer, was formed by reactive pulse DC sputtering while introducing Ar and O ₂ gases using Ti as a target. .

  The spectral reflection characteristics of the multilayer antireflection film thus obtained are shown in FIG. The antireflection film formed by the method of this example had very good characteristics with a wavelength of 450 to 650 nm and a reflectance of 1% or less.

  As described above, according to the vacuum deposition apparatus of the present invention and the vacuum deposition method performed by the vacuum deposition apparatus, a solid material having a high material density and fine pores, or a granular material having a high packing density, Alternatively, by forming a thin film by an electron beam evaporation method using a mixed material of the solid material and the granular material, it is possible to maintain a stable film formation rate over a long period of time and to form a fluoride film with little light absorption. It is possible to form a film on the film at high speed and with extremely high film formation stability.

The schematic block diagram which shows the vacuum evaporation system of this invention. Schematic of the ring hearth that continuously supplies the vapor deposition material. Schematic of the ring hearth and vapor deposition material used in Example 2. FIG. The figure which shows the spectral reflectance of the anti-reflective film formed into Example 1 and 2. FIG. 6 is a graph showing the spectral reflectance of an antireflection film formed in Example 3.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber 2 ... Unwinding part 3 ... Winding part 4 ... Plastic film 5 ... Main roll 6 ... Deposition material (crucible)
7 ... Electron gun 8 ... Heater 9 ... Thermometer 10 ... Optical spectral sensitivity sensor 11 ... Shutter 12 ... Ring hearth 13 ... Sintered pellet 14 ... Granule material

Claims (8)

In a vacuum deposition apparatus for depositing the deposition material on a plastic film by irradiating the deposition material with an electron beam in a vacuum chamber using an electron gun,
The vacuum chamber includes at least an unwinding unit that continuously unwinds the plastic film,
A winding unit for winding the plastic film unwound from the unwinding unit;
A main roll disposed between the unwinding unit and the winding unit;
A solid material having a high material density and fine pores, a granular material having a high packing density, or a mixed material of the solid material and the granular material, and a fluoride mainly composed of magnesium fluoride. And a deposition material disposed opposite to the main roll,
An electron gun for irradiating the vapor deposition material with an electron beam;
Supply means for continuously supplying the vapor deposition material;
A vacuum vapor deposition apparatus comprising:   The vacuum deposition apparatus according to claim 1, wherein the vapor deposition material has a porosity of 5% or more and 50% or less, and an average pore diameter of 0.1 µm or more and 100 µm or less. The vacuum chamber is
Temperature measuring means for measuring and outputting the temperature of the vapor deposition material;
Control means for controlling the output of the electron beam or the transport speed of the plastic film based on the output of the temperature measuring means;
The vacuum deposition apparatus according to claim 1, further comprising:   An antireflection film formed by using the vacuum vapor deposition apparatus according to claim 1. In a vacuum vapor deposition method of irradiating an electron beam on a vapor deposition material in a vacuum chamber using an electron gun and forming the vapor deposition material on a plastic film,
The vacuum chamber includes an unwinding unit that continuously unwinds the plastic film, a winding unit that winds up the plastic film unwound from the unwinding unit, and the unwinding unit and the winding unit. A main roll disposed between, a vapor deposition material disposed opposite to the main roll, an electron gun for irradiating the vapor deposition material with an electron beam, and a supply means for continuously supplying the vapor deposition material,
An unwinding step of continuously unwinding the plastic film from the unwinding portion;
Next, it is a solid material having a high material density and fine pores, a granular material having a high packing density, or a mixed material of the solid material and the granular material, and mainly composed of magnesium fluoride. The vapor deposition material containing fluoride, opposed to the main roll, and continuously supplied by the supply means is irradiated with an electron beam using the electron gun, and the electron beam on the main roll is irradiated with the electron beam. A film forming step of forming the vapor deposition material on a plastic film;
Next, a winding process for continuously winding the plastic film from the winding unit;
A vacuum deposition method comprising:   The vacuum deposition method according to claim 5, wherein the vapor deposition material has a porosity of 5% to 50% and an average pore diameter of 0.1 μm to 100 μm. A temperature measuring unit that measures and outputs the temperature of the vapor deposition material; and a control unit that controls the output of the electron beam or the transport speed of the plastic film based on the output of the temperature measuring unit. Prepared,
Using the temperature output means to measure and output the temperature of the vapor deposition material; and
Controlling the output of the electron beam or the transport speed of the plastic film based on the output of the temperature measuring means using the control means;
The vacuum evaporation method according to claim 5 or 6, characterized by comprising:   An antireflection film formed by using the vacuum vapor deposition method according to claim 5.