JP2008255420A - Lamp heating type thermal cvd apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lamp heating type thermal CVD apparatus which has enhanced yield by efficiently depositing a CVD film. <P>SOLUTION: The lamp heating type thermal CVD apparatus is used for depositing a film by a thermal CVD method on a substrate 3. The apparatus includes: a chamber 1; lamp heaters 4, 5 which are arranged outside the chamber 1 and irradiates the substrate 3 with the lamp light transmitted by the chamber 1; a raw material gas introducing mechanism which is connected to the chamber 1 and introduces the raw material gas into the chamber 1; an exhaust port 21 which is prepared in the chamber 1 and exhausts the inside of the chamber 1; and an exhaust mechanism 1 which is connected to the exhaust port 21. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a lamp heating type thermal CVD (chemical vapor deposition) apparatus, and more particularly, to a lamp heating type thermal CVD apparatus capable of improving the yield by efficiently forming a CVD film.

Hereinafter, a conventional thermal CVD apparatus will be described.
This thermal CVD apparatus forms an oxide superconductor YBa ₂ Cu ₃ O ₇ film (hereinafter referred to as “YBCO film”) as a CVD film on a steel film or steel belt as a substrate. .

  A conventional thermal CVD apparatus has a quartz tube chamber, and a substrate such as a steel film or a steel belt is continuously supplied into the quartz tube chamber. Further, a cantal heater or a ceramic heater is disposed outside the quartz tube chamber, and the inside of the quartz tube chamber is heated by this cantal heater. The thermal CVD apparatus also has a source gas introduction mechanism that introduces a source gas for the YBCO film into the quartz tube chamber. Further, the thermal CVD apparatus has a vacuum pump that evacuates the chamber so that a predetermined pressure is obtained.

Next, a method for forming a YBCO film using the thermal CVD apparatus will be described.
First, the inside of the chamber is evacuated by a vacuum pump, so that the inside of the chamber is reduced to a predetermined pressure. Further, a steel film is supplied into the chamber, and the inside of the chamber is heated by a heater. Thereby, the inner wall of the chamber is heated to a temperature higher than 800 ° C., and the steel film is heated to 800 ° C.

Next, the source gas for the YBCO film is supplied to the surface of the steel film in the chamber and the vicinity thereof by the source gas introduction mechanism. At this time, a steel film is continuously supplied into the chamber, and a YBCO film is continuously formed on the steel film by a thermal CVD method.
Japanese Patent Laying-Open No. 2005-15840 (paragraph 0026)

  In the conventional thermal CVD apparatus, when a substrate such as a steel film is heated by a cantal heater or a ceramic heater, not only the substrate but also the interior and inner walls of the chamber are heated as a whole. For this reason, the CVD film is formed not only on the substrate but also on the inner wall of the chamber. As a result, the ratio of the amount of YBCO film formed on the substrate to the amount of source gas supplied into the chamber decreases, and the yield also decreases.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a lamp heating type thermal CVD apparatus capable of efficiently forming a CVD film to improve the yield. is there.

In order to solve the above problems, a lamp heating type thermal CVD apparatus according to the present invention is a CVD apparatus for forming a film on a substrate by a thermal CVD method.
A chamber;
A lamp heater disposed outside the chamber and irradiating the substrate with lamp light transmitted through the chamber;
A source gas introduction mechanism connected to the chamber and introducing a source gas into the chamber;
An exhaust port provided in the chamber for exhausting the chamber;
An exhaust mechanism connected to the exhaust port;
It is characterized by comprising.

  According to the lamp heating type thermal CVD apparatus according to the present invention, the substrate is heated by the lamp light emitted from the lamp heater, and the lamp light passes through the chamber, so that the chamber can be prevented from being heated to a high temperature. For this reason, it can suppress that a CVD film adheres to the inner wall of a chamber like the conventional thermal CVD apparatus. As a result, the ratio of the amount of the CVD film formed on the substrate to the amount of the source gas supplied into the chamber can be increased, and the yield can be increased.

A lamp heating type thermal CVD apparatus according to the present invention is a CVD apparatus for forming a film on a substrate by a thermal CVD method.
A chamber;
A first lamp heater disposed outside the chamber and irradiating the substrate with lamp light transmitted through the chamber;
A second lamp heater disposed outside the chamber and irradiating the substrate with lamp light transmitted through the chamber;
A source gas introduction mechanism connected to the chamber and introducing a source gas into the chamber;
An exhaust port provided in the chamber for exhausting the chamber;
An exhaust mechanism connected to the exhaust port;
It is characterized by comprising.

In the lamp heating thermal CVD apparatus according to the present invention, each of the first lamp heater and the second lamp heater includes a lamp light emitting unit that emits lamp light, and a lamp seal that seals both ends of the lamp light emitting unit. And
A first shielding member that is shielded so that lamp light emitted from a lamp light emitting part of the second lamp heater is not irradiated to the lamp seal part of the first lamp heater;
A second shielding member that is shielded so that lamp light emitted from a lamp light emitting portion of the first lamp heater is not irradiated to the lamp seal portion of the second lamp heater;
It is also possible to further comprise.

  According to the lamp heating type thermal CVD apparatus according to the present invention, a shielding member that shields lamp light emitted from other lamp heaters is attached to the lamp seal portions of the first and second lamp heaters. It is possible to suppress the lamp seal portion from being heated by being irradiated with the lamp light. As a result, the lifetimes of the first and second lamp heaters can be significantly increased.

In the lamp heating thermal CVD apparatus according to the present invention, the substrate may have a long shape, and may further include a transport mechanism that continuously transports the substrate into the chamber.
Moreover, in the lamp heating type thermal CVD apparatus according to the present invention, the source gas introduction mechanism has a source gas introduction port, and the exhaust port is conveyed in the conveyance direction with respect to the source gas introduction port by the conveyance mechanism. It is preferable to be located on the downstream side.

In the lamp heating thermal CVD apparatus according to the present invention, the inner diameter of the chamber is preferably not more than twice the width of the substrate.
In the lamp heating thermal CVD apparatus according to the present invention, the source gas introduction mechanism has a source gas introduction port, and the distance between the substrate and the source gas introduction port is 1/4 of the inner diameter of the chamber. The following is preferable.

  As described above, according to the present invention, it is possible to provide a lamp heating type thermal CVD apparatus capable of efficiently forming a CVD film and improving the yield.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a sectional view showing a lamp heating type thermal CVD apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line 2-2 shown in FIG. This lamp heating type thermal CVD apparatus is an apparatus for continuously forming a CVD film on a long substrate 3.

  As shown in FIGS. 1 and 2, the lamp heating type thermal CVD apparatus has a quartz tube chamber 1, and the quartz tube chamber 1 has a length such as a steel film or a steel belt having a thickness of about 0.1 mm. A long substrate 3 is continuously supplied. That is, this apparatus has a transport mechanism for continuously transporting the substrate 3 along the longitudinal direction in the center of the quartz tube chamber 1. The inner diameter of the quartz tube chamber 1 is preferably not more than twice the width of the long substrate 3.

  A substrate supply unit (not shown) in which the substrate 3 is wound on a reel is disposed at one end of the quartz tube chamber 1, and the substrate 3 wound from the substrate supply unit is placed in the quartz tube chamber 1. It is supplied in the direction of the arrow 3a. A substrate recovery unit (not shown) in which the substrate 3 is wound on a reel is disposed at the other end of the quartz tube chamber 1, and a CVD film is formed on the substrate 3 in the quartz tube chamber 1. After that, the substrate 3 is wound around a reel and collected by the substrate collecting unit.

  Lamp heaters (halogen heaters, infrared heaters) 4 to 7 are disposed outside the film formation zone 4 a of the quartz tube chamber 1. That is, these lamp heaters 4 to 7 are arranged so as to surround the outer periphery of the film formation zone 4a at equal intervals. Although the lamp light (for example, infrared light) emitted by these lamp heaters 4 to 7 passes through the quartz tube chamber 1 and is irradiated onto the substrate 3, the substrate 3 is quickly heated in the film formation zone 4a. The quartz tube chamber 1 is not heated.

  Each of the lamp heaters 4 to 7 includes a lamp light emitting portion 8 that emits infrared light, and a lamp seal portion 9 that seals both ends of the lamp light emitting portion 8. The proper use temperature of the lamp seal portion 9 is 350 ° C. or less. The reason is that if the temperature exceeds 350 ° C., the lamp seal portion 9 is cracked due to the difference in thermal expansion coefficient of the material used for the lamp seal portion 9, and the crack causes failure of the lamp heater. Since molybdenum is used for the lamp seal portion 9, the oxidation of molybdenum starts from the crack, the volume of molybdenum increases, and the crack further advances.

  On the other hand, in the present embodiment, the lamp heaters 4 to 7 are arranged so as to surround the outer periphery of the quartz tube chamber 1 at equal intervals, so that the infrared light emitted from the lamp light emitting unit 8 is also irradiated to the lamp seal unit 9. Therefore, it is preferable to prevent the lamp seal portion 9 from being irradiated with the infrared light. Therefore, a shielding member 10 that shields infrared light emitted from other lamp heaters is attached to the lamp seal portions 9 of the lamp heaters 4 to 7. The shielding member 10 protects the lamp seal portion 9 from infrared light and prevents the occurrence of cracks. The shielding member 10 is preferably made of a metal plate such as stainless steel, a metal plate treated with Au plating or alumite oxalate, or the like. The surface of the metal plate is preferably a mirror surface. Thereby, infrared light can be reflected.

  In the present embodiment, the shielding member 10 is attached to the lamp seal portion 9. However, it may not be directly attached to the lamp seal portion 9 as long as infrared light can be shielded. It may be attached. Various materials can be used as the material of the shielding member 10 as long as it can shield infrared light.

  Further, each of the lamp heaters 4 to 7 has an air cooling mechanism 11 for lowering the temperature at the time of use. The air cooling mechanism 11 has an air supply port 12 for supplying purge air, and the air supply port 12 is connected to an air passage 13. The air passage 13 is connected to a plurality of purge air introduction ports 14, and purge air is supplied from the purge air introduction ports 14 to the lamp light emitting unit 8. Thereby, the lamp light emission part 8 is cooled.

  A first partition plate 17 and a second partition plate 18 are attached in the quartz tube chamber 1. The first partition plate 17 is located near one end of the lamp heaters 4 to 7, and the second partition plate 18 is located near the other ends of the lamp heaters 4 to 7. The quartz tube chamber 1 located between the substrate supply unit and the first partition plate 17 is a temperature raising zone 15a for preheating the substrate 3 to be supplied. The inside of the quartz tube chamber 1 located between the first partition plate 17 and the second partition plate 18 is a film formation zone 4a for forming a CVD film on the substrate 3 to be supplied. The quartz tube chamber 1 located between the second partition plate 18 and the substrate recovery part is a temperature lowering zone 16a for lowering the temperature of the substrate 3 heated to a high temperature in the film formation zone. The first and second partition plates 17 and 18 are provided with slits (or holes) 17a and 18a that allow the substrate 3 to pass therethrough.

  A temperature increase zone heater 15 is provided outside the temperature increase zone 15a of the quartz tube chamber 1 so as to cover the outer periphery. The temperature increase zone heater 15 is provided between the lamp heaters 4 to 7 and the substrate supply section. Located between. Further, a cooling zone heater 16 is provided outside the cooling zone 16a of the quartz tube chamber 1 so as to cover the outer periphery, and this cooling zone heater 16 is provided between the lamp heaters 4 to 7 and the substrate recovery section. Is located.

  The heater 15 for temperature rising zone preheats the board | substrate 3 supplied to the temperature rising zone 15a, and the temperature of this preheating is 500-600 degreeC, for example. Further, the temperature-lowering zone heater 16 lowers the temperature of the substrate 3 heated to a high temperature of, for example, about 800 ° C. in the film formation zone 4a in the temperature-lowering zone 16a, and the temperature of the substrate 3 after the temperature reduction is, for example, 500 to 600 ° C. It is.

  The lamp heating type thermal CVD apparatus has a source gas introduction mechanism 19 for introducing a source gas for a CVD film, for example, a source gas for a YBCO film, into the quartz tube chamber 1 (see FIG. 1). The source gas introduction mechanism 19 has a source gas inlet 20 through which source gas is supplied to the substrate 3. The source gas inlet 20 is located in the film formation zone 4 a in the quartz tube chamber 1 and above the substrate 3. The distance between the source gas introduction port 20 and the substrate 3 is preferably ½ or less of the inner diameter of the quartz tube chamber 1. The source gas inlet 20 is preferably an aggregate of a plurality of inlets and supplies the source gas to the substrate 3 in a shower form.

  The quartz tube chamber 1 is provided with an exhaust port 21 located in the film forming zone 4a, and this exhaust port 21 is connected to a vacuum pump (not shown) for evacuating the inside of the quartz tube chamber 1. The exhaust port 21 is disposed in the vicinity of the second partition plate 18. As a result, the source gas introduced above the substrate 3 by the source gas introduction mechanism 19 can be made to flow in the transport direction of the substrate 3 and over the surface of the substrate 3.

  Next, a method for forming a CVD film on a substrate using the lamp heating thermal CVD apparatus will be described.

  The inside of the quartz tube chamber 1 is evacuated by a vacuum pump to reduce the inside of the quartz tube chamber 1 to a predetermined pressure. Further, a source gas for the YBCO film is supplied from the source gas inlet 20 to the surface of the substrate 3 by the source gas introduction mechanism 19, and this source gas is caused to flow in the direction of transport of the substrate 3 and over the surface of the substrate 3, Exhaust from the exhaust port 21. The temperature raising zone 15 a of the quartz tube chamber 1 is heated to 500 to 600 ° C. by the temperature raising zone heater 15. Further, the film formation zone 4 a of the quartz tube chamber 1 is heated to 800 ° C. by the lamp heaters 4 to 7. Further, the temperature lowering zone 16 a of the quartz tube chamber 1 is heated to 500 to 600 ° C. by the temperature lowering zone heater 16.

  After the lamp heating thermal CVD apparatus is in the above state, the substrate 3 is transferred from the substrate supply unit to the temperature raising zone 15a, the film forming zone 4a, and the temperature lowering zone 16a at a constant speed, and then the substrate 3 is transferred to the substrate. Collect in the collection unit. Thereby, a YBCO film is continuously formed on the substrate 3.

Hereinafter, a detailed film forming method will be described.
The substrate 3 is heated to 500 to 600 ° C. in the temperature raising zone 15a. Next, the heated substrate 3 is transported to the film formation zone 4 a, and the substrate 3 is quickly heated to 800 ° C. by the lamp heaters 4 to 7 in the film formation zone 4 a and the source gas is supplied to the surface of the substrate 3. To do. Thereby, a YBCO film is formed on the substrate 3. Next, the substrate 3 on which the YBCO film is formed is transported to the temperature lowering zone 16a, and the temperature of the substrate 3 is lowered to 500 to 600 ° C. in the temperature lowering zone 16a. Next, the temperature-reduced substrate 3 is recovered by the substrate recovery unit. In this way, the YBCO film is continuously formed on the long substrate 3 such as a stainless film.

  According to the above embodiment, the substrate 3 is heated by the lamp light emitted from the lamp heaters 4 to 7, and this lamp light is transmitted through the quartz tube chamber 1, so that the quartz tube chamber 1 located in the film formation zone 4a Heating to a high temperature can be suppressed. For this reason, it can suppress that a CVD film adheres to the inner wall of a chamber like the conventional thermal CVD apparatus. As a result, the ratio of the amount of CVD film formed on the substrate 3 to the amount of source gas supplied into the quartz tube chamber 1 can be increased, and the yield can be increased.

  Further, in the present embodiment, by arranging the exhaust port 21 on the downstream side in the transport direction of the substrate 3 (the direction of the arrow 3 a) with respect to the raw material gas introduction port 20, the source gas is disposed in the transport direction of the substrate 3. The surface of the substrate 3 can be flown over. As a result, it can be expected that the amount of source gas exhausted without film formation is reduced, and the yield can be increased.

  In the present embodiment, the amount of source gas supplied into the quartz tube chamber 1 can be reduced by making the inner diameter of the quartz tube chamber 1 not more than twice the width of the long substrate 3. In addition, the flow rate of the source gas in the quartz tube chamber 1 can be increased, and the flow of the source gas can be made to go straight. As a result, the yield can be increased.

  In this embodiment, since the shielding member 10 that shields the lamp light emitted from the other lamp heaters is attached to the lamp seal portions 9 of the lamp heaters 4 to 7, the lamp light is incident on the lamp seal portion 9. Irradiation and heating to 350 ° C. or higher can be suppressed. As a result, the lifetime of the lamp heaters 4 to 7 can be greatly prolonged. Specifically, it has been confirmed that the lamp heaters 4 to 7 to which the shielding member 10 is attached have a lifetime that is at least twice that of the lamp heater to which the shielding member is not attached.

  Moreover, in this Embodiment, since the board | substrate 3 is heated with the some lamp heaters 4-7, the temperature uniformity of the board | substrate 3 can be improved. Further, since the substrate 3 is heated by the lamp heaters 4 to 7, the temperature of the substrate 3 can be quickly increased as compared with a conventional CVD apparatus that heats the substrate by a cantal heater. For this reason, the operating rate of the apparatus can be increased.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the above embodiment, a long substrate is used, but a non-long substrate can also be used.

  In the above embodiment, a lamp heating thermal CVD apparatus having a transport mechanism for continuously transporting a long substrate 3 to the quartz tube chamber 1 has been described. However, a lamp heating thermal CVD apparatus having no transport mechanism is described. It is also possible to apply the present invention to a CVD apparatus. In this case, the substrates are inserted one by one into the quartz tube chamber, and a CVD film is formed on the substrate.

  Moreover, in the said embodiment, although the four lamp heaters 4-7 are arrange | positioned outside the quartz tube chamber 1, you may arrange | position three or less lamp heaters outside the quartz tube chamber 1, Five or more lamp heaters may be arranged.

It is sectional drawing which shows the lamp heating type thermal CVD apparatus by embodiment of this invention. It is sectional drawing along the 2-2 line shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Quartz tube chamber 3 ... Board | substrate 3a ... Arrow 4-7 ... Lamp heater 4a ... Film-forming zone 8 ... Lamp light emission part 9 ... Lamp seal part 10 ... Shielding member 11 ... Air cooling mechanism 12 ... Air supply port 13 ... Air passage 14 Purge air introduction port 15 Heating zone heater 15a Heating zone 16 Temperature falling zone heater 16a Temperature falling zone 17 First partition plate 18 Second partition plates 17a, 18a Slit (or hole)
19 ... Raw material gas introduction mechanism 20 ... Raw material gas introduction port 21 ... Exhaust port

Claims (7)

In a CVD apparatus for forming a film on a substrate by a thermal CVD method,
A chamber;
A lamp heater disposed outside the chamber and irradiating the substrate with lamp light transmitted through the chamber;
A source gas introduction mechanism connected to the chamber and introducing a source gas into the chamber;
An exhaust port provided in the chamber for exhausting the chamber;
An exhaust mechanism connected to the exhaust port;
A lamp heating type thermal CVD apparatus comprising: In a CVD apparatus for forming a film on a substrate by a thermal CVD method,
A chamber;
A first lamp heater disposed outside the chamber and irradiating the substrate with lamp light transmitted through the chamber;
A second lamp heater disposed outside the chamber and irradiating the substrate with lamp light transmitted through the chamber;
A source gas introduction mechanism connected to the chamber and introducing a source gas into the chamber;
An exhaust port provided in the chamber for exhausting the chamber;
An exhaust mechanism connected to the exhaust port;
A lamp heating type thermal CVD apparatus comprising: In Claim 2, each of the first lamp heater and the second lamp heater includes a lamp light emitting part that emits lamp light, and a lamp seal part that seals both ends of the lamp light emitting part,
A first shielding member that is shielded so that lamp light emitted from a lamp light emitting part of the second lamp heater is not irradiated to the lamp seal part of the first lamp heater;
A second shielding member that is shielded so that lamp light emitted from a lamp light emitting portion of the first lamp heater is not irradiated to the lamp seal portion of the second lamp heater;
A lamp heating type thermal CVD apparatus characterized by further comprising:   4. The lamp heating type according to claim 1, wherein the substrate has a long shape, and further includes a transport mechanism that continuously transports the substrate into the chamber. 5. Thermal CVD equipment.   5. The raw material gas introduction mechanism according to claim 4, wherein the raw material gas introduction mechanism has a raw material gas introduction port, and the exhaust port is located downstream of the raw material gas introduction port in the transport direction transported by the transport mechanism. Lamp heating type thermal CVD apparatus.   6. The lamp heating type thermal CVD apparatus according to claim 4, wherein an inner diameter of the chamber is not more than twice a width of the substrate.   7. The source gas introduction mechanism according to claim 1, wherein the source gas introduction mechanism has a source gas introduction port, and a distance between the substrate and the source gas introduction port is ¼ or less of an inner diameter of the chamber. There is a lamp heating type thermal CVD apparatus.

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