JP2008235822A - Semiconductor module and manufacturing method therefor - Google Patents

Semiconductor module and manufacturing method therefor Download PDF

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Publication number
JP2008235822A
JP2008235822A JP2007077305A JP2007077305A JP2008235822A JP 2008235822 A JP2008235822 A JP 2008235822A JP 2007077305 A JP2007077305 A JP 2007077305A JP 2007077305 A JP2007077305 A JP 2007077305A JP 2008235822 A JP2008235822 A JP 2008235822A
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JP
Japan
Prior art keywords
substrate
wiring
film
film wiring
anisotropic conductive
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Pending
Application number
JP2007077305A
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Japanese (ja)
Inventor
Tomohiro Iguchi
Takashi Nagatsuka
Michiko Ono
知洋 井口
美智子 小野
貴史 長塚
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Toshiba Corp
株式会社東芝
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Publication date
Application filed by Toshiba Corp, 株式会社東芝 filed Critical Toshiba Corp
Priority to JP2007077305A priority Critical patent/JP2008235822A/en
Publication of JP2008235822A publication Critical patent/JP2008235822A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module by which a substrate is smoothly reused without deteriorating connection reliability between the substrate and a new film wiring board, by leaving no anisotropic conductive adhesive agent between wiring patterns of the substrate, and to provide a method for manufacturing the semiconductor module. <P>SOLUTION: The semiconductor module M is constituted, in such a way that a plurality of wiring patterns 2A formed on the substrate 1 at predetermined intervals and a plurality of wiring patterns 4A formed on the film wiring substrate 3 at predetermined intervals are electrically connected via the anisotropic conductive adhesive agent 5; further, the substrate can be reused by removing defective or unnecessary film wiring board from the substrate; the distance between the wiring patterns formed on the substrate is set at less than 20 times the diameter of particles which constitute an anisotropic conductive adhesive agent; the distance between the wiring patterns, formed on the film wiring board is set at about 300 μm; and the wiring patterns of the substrate and that of the film wiring board are so formed as to have equal pitches. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor module in which wiring patterns formed on a substrate and a film wiring substrate are electrically connected via a connecting member, and a substrate after removing a defective or unnecessary film wiring substrate. The present invention relates to a method for manufacturing a semiconductor module for use.

  In a semiconductor module or a liquid crystal display device, a plurality of wiring patterns formed on a film wiring board (TCP) are opposed to a plurality of wiring patterns formed on the substrate, and an anisotropic conductive adhesive (ACF) is provided between the wiring patterns. ) Or the like is interposed, and the wiring patterns are electrically connected to each other.

Specifically, it is configured as schematically shown in FIG. 2A, the thickness of the substrate 1 is 0.6 mm, the thickness of the wiring pattern 2 formed on the substrate 1 is 18 μm, and the width dimension La is 250 μm. The distance (interval dimension) Lb between the wiring patterns 2 is set to 300 μm, and the pitch P between the wiring patterns 2 is set to 550 μm. (The above is “about”. The same shall apply hereinafter.)
On the other hand, the thickness of the film wiring board 3 is 10 μm, the thickness of the wiring pattern 4 formed on the film wiring board 3 is 12 μm, the width dimension La of the wiring pattern 4, the distance Lb between the wiring patterns 4, and the wiring pattern 4 The mutual pitch P is set to 250 μm, 300 μm, and 550 μm, similarly to the wiring pattern 2 of the substrate 1.

  In such an assembling process of the semiconductor module Ma, misalignment may occur for some reason, and defective products may be produced due to other circumstances in which the wiring patterns 2 and 4 are not normally electrically connected to each other. Therefore, the film wiring board 3 is peeled from the board 1 and at least the board 1 is to be reused (repaired).

  FIG. 2B shows a state where the film wiring substrate 3 is peeled from the substrate 1. At this time, the peeling heating tool T heated to a predetermined temperature is brought into contact with the film wiring board 3 and heated. Since heat is transferred to the anisotropic conductive adhesive 5 through the film wiring substrate 3 and the adhesive strength of the anisotropic conductive adhesive 5 is reduced, the film wiring substrate 3 is peeled off from the substrate 1.

  In [Patent Document 1], a connection member that peels off a film wiring board connected via a connecting member from a defective or unnecessary liquid crystal panel of a liquid crystal display device and adheres to the peeled film wiring board. A method for recycling a film wiring board mounted with a semiconductor element is described in which the film wiring board is regenerated by removing the film.

JP 2002-170846 A

  By the way, even if the film wiring substrate 3 is peeled off from the substrate 1, eventually, as shown in FIG. 2B, anisotropic conductive bonding is performed between the adjacent wiring patterns 2 and 4 of the substrate 1 and the film wiring substrate 3. The agent 5 remains as it is. Further, the anisotropic conductive adhesive 5 may remain on the facing surfaces of the wiring patterns 2 and 4.

  As a factor, the distance Lb (300 μm) between the wiring patterns 2 and 4 of the substrate 1 and the film wiring substrate 3 is the same. Therefore, since the adhesiveness to the anisotropic conductive adhesive is the same between the substrate 1 and the film wiring substrate 3, the establishment that the anisotropic conductive adhesive remains is the same between the substrate 1 and the film wiring substrate 3. Therefore, the anisotropic conductive adhesive does not selectively remain on the film wiring substrate 3, and ACF remains on the substrate 1.

  An anisotropic conductive adhesive 5 is interposed between the wiring patterns 2 and 4 of the substrate 1 and the film wiring substrate 3, and the gap is substantially the same as the diameter of the adhesive particles. Therefore, even if the heat of the heating tool T effectively reduces the chain strength between the adhesive particles, and even if the anisotropic conductive adhesive 5 remains on the surface of the wiring pattern 2 of the substrate 1, it can be almost ignored.

  By further increasing the heating amount of the peeling heating tool T, the adhesive strength of the anisotropic conductive adhesive 5 should be reduced quickly and reliably. However, a simple increase in the amount of heating in the heating tool T may have a thermal adverse effect on the substrate 1 itself to be reused, the semiconductor elements mounted on the substrate 1, and the like.

  When the anisotropic conductive adhesive 5 remains between the wiring patterns 2 on the substrate 1 and a new anisotropic conductive adhesive 5 is supplied to match the new film wiring substrate 3, the same amount as the remaining amount. The supply adhesive 5 is pushed out from between the substrates 1 and 3 and protrudes. The protruding anisotropic conductive adhesive 5 adheres to the heating tool T and obstructs the manufacture of the continuous semiconductor module M.

  The present invention has been made on the basis of the above circumstances, and the object of the present invention is a configuration in which no connection member remains between the wiring patterns of the substrates after the defective or unnecessary film wiring substrate is peeled from the substrate. Thus, it is an object of the present invention to provide a semiconductor module and a method for manufacturing the semiconductor module that can smoothly reuse the substrate without reducing the connection reliability between the substrate and the new film wiring substrate.

In order to satisfy the above object, the present invention provides a plurality of wiring patterns formed on a substrate with a predetermined interval and a plurality of wiring patterns formed on a film wiring substrate with a predetermined interval. A semiconductor module that is connected through and peels off a defective or unnecessary film wiring substrate from the substrate and allows the substrate to be reused.
The distance between the wiring patterns formed on the substrate is set within 20 times the particle size of the particles constituting the connecting member, and the distance between the wiring patterns formed on the film wiring substrate is set to about 300 μm. These wiring patterns and the wiring pattern of the film wiring board are formed at an equal pitch.

  In order to satisfy the above object, a method for manufacturing a semiconductor module according to the present invention includes a repair method in which a defective or unnecessary film wiring board is peeled off from a substrate using the semiconductor module described above, and the substrate is reused. To do.

  According to the present invention, the connection member does not remain between the wiring patterns of the substrate after the film wiring substrate is peeled off, and the substrate can be reused without reducing the connection reliability with the new film wiring substrate. There are effects such as smoothing.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1A is a schematic cross-sectional view of the semiconductor module M, and FIG. 1B is a view for explaining a repair method of the semiconductor module M.
First, referring to FIG. 1A, reference numeral 1 denotes a substrate, and a plurality of wiring patterns 2A are formed on the upper surface of the substrate 1 at an equal pitch P with a predetermined interval. Reference numeral 3 denotes a film wiring board (TCP), and a plurality of wiring patterns 4A are formed on the lower surface of the film wiring board 3 at equal intervals with a predetermined interval.

  The central axis a of the wiring pattern 2A of the substrate 1 and the central axis a of the wiring pattern 4A of the film wiring substrate 3 are correctly opposed to each other, and therefore the wiring patterns 2 and 4 are formed at equal pitches. An anisotropic conductive adhesive (ACF) 5 as a connecting member is interposed between the substrate 1 and the film wiring substrate 3 to connect the substrate 1 and the film wiring substrate 3.

  That is, the plurality of wiring patterns 2 formed on the substrate 1 by the anisotropic conductive adhesive 5 and the plurality of wiring patterns 4 formed on the film wiring substrate 3 are electrically connected to each other, and thus the semiconductor module. M is configured.

Specifically, the thickness of the substrate 1 is 0.6 mm, the thickness of the wiring pattern 2A formed on the substrate 1 is 18 μm, and the width dimension Lc is set to 500 μm. The distance (interval dimension) Ld between these wiring patterns 2A is set to 50 μm, and the pitch P between the wiring patterns 2A is 550 μm. (All figures are “about”. The same applies hereinafter.)
The thickness of the film wiring board 3 is 10 μm, the thickness of the wiring pattern 4A formed on the film wiring board 3 is 12 μm, and the width dimension La of the wiring pattern 4A is set to 250 μm. The distance Lb between these wiring patterns 4A is set to 300 μm, and the pitch P between the wiring patterns 4A is 550 μm.

  Therefore, the pitch P: 550 μm between the wiring patterns 2A of the substrate 1 and the pitch P: 550 μm between the wiring patterns 4A of the film wiring substrate 3 are set to be equal to each other (equal pitch). Moreover, as described above, the central axis a of the wiring pattern 2A of the substrate 1 and the central axis a of the wiring pattern 4A of the film wiring substrate 3 are correctly opposed to each other.

  In other words, the width dimension Lc (500 μm) of the wiring pattern 2A of the substrate 1 and the width dimension La (250 μm) of the wiring pattern 4A of the film wiring substrate 3 are opposed to each other at a ratio of 2: 1. The mutual gap Ld (50 μm) and the wiring pattern 4A mutual gap Lb (300 μm) of the film wiring board 3 face each other at a ratio of 1: 6.

On the other hand, the anisotropic conductive adhesive 5 is usually one having a particle diameter of 3 μm (for example, AC-2120Y manufactured by Hitachi Chemical Co., Ltd.). As described above, the distance Ld (50 μm) between the wiring patterns 2A of the substrate 1 is about 16.7 times the particle size (3 μm) of the particles constituting the anisotropic conductive adhesive 5.
For the reason described later, the distance Ld between the wiring patterns 2A needs to be set within 20 times the particle size of the anisotropic conductive adhesive 5.

  As a result of inspecting the completed semiconductor module M, the wiring pattern 4A of the film wiring substrate 3 is not correctly opposed to the wiring pattern 2A of the substrate 1, and the position of the wiring pattern 4A is shifted, thereby impairing the reliability of electrical connection. Turned out to be. Or it turned out that the semiconductor element or circuit mounted in the film wiring board 3 is defective.

  Since the substrate 1 is a defective product as it is, the film wiring board 3 is peeled off from the board 1, and the peeled film wiring board 3 is discarded. Then, a new film wiring substrate 3 is prepared and connected to the substrate 1 via an anisotropic conductive adhesive 5 that is a connecting member. Therefore, the substrate 1 is reused (repaired).

In order to peel off the defective (or unnecessary) film wiring substrate 3 from the substrate 1, it is performed as shown in FIG.
That is, the peeling heating tool T heated to a predetermined temperature is brought into contact with the film wiring board 3 and heated. Heat is transmitted to the anisotropic conductive adhesive 5 through the film wiring substrate 3, and the adhesive strength of the anisotropic conductive adhesive 5 is reduced. The film wiring substrate 3 is peeled off from the substrate 1 with the adhesive strength sufficiently lowered.

  In this state, the distance Ld (50 μm) between the wiring patterns 2A formed on the substrate 1 is extremely narrower than the distance Lb (300 μm) between the wiring patterns 4A formed on the film wiring board 3. The distance Ld between the wiring patterns 2A formed on the substrate 1 is set to about 5 times the particle diameter (8 μm) of the anisotropic conductive adhesive 5.

  From this, the heat of the peeling heating tool T is transmitted from the film wiring board 3 to the anisotropic conductive adhesive 5 between the wiring patterns 2A, and this bonding strength is reduced, and the wiring pattern 2A surface of the board 1 is also reduced. And the strength of the anisotropic conductive adhesive 5 filled between the wiring pattern 4A of the film wiring board 3 and the wiring pattern 3 are reduced.

  On the other hand, the distance Lb between the wiring patterns 4 </ b> A formed on the film wiring board 3 is set to about 40 times the particle diameter of the anisotropic conductive adhesive 5. That is, even if the adhesive strength of the anisotropic conductive adhesive 5 decreases, the adhesive strength of the anisotropic conductive adhesive 5 interposed between the distances Lb between the wiring patterns 4A to the film wiring board 3 becomes anisotropic conductive. It is sufficiently higher than the strength of the adhesive 5 and the wiring pattern 2A.

  Therefore, it is difficult for the film wiring 3 to be peeled off from the anisotropic conductive adhesive 5 positioned between the distances Lb between the wiring patterns 4A. Most of the anisotropic conductive adhesive 5 positioned between the wiring patterns 2A of the substrate 1 moves to the side between the wiring patterns 4A of the film wiring substrate 3, and is almost between the wiring patterns 2A of the substrate 1. It does not remain.

  In addition, the portion T on the upper surface of the wiring pattern 2A of the substrate 1 and facing the surface of the wiring pattern 4A of the film wiring substrate 3 originally has a very small distance between the facing surfaces of the wiring patterns 2A and 4A. The anisotropic conductive adhesive 5 hardly remains at the T portion of the wiring pattern 2A.

  It is inevitable that a certain amount of the anisotropic conductive adhesive 5 remains in the portion S that does not oppose the wiring pattern 4A surface of the film wiring board 3 on the upper surface of the wiring pattern 2A. However, since this portion S faces the wiring patterns 4A of the film wiring board 3, most of the anisotropic conductive adhesive 5 moves between the wiring patterns 4A, and the portion S is negligible. Only remains.

  When the new film wiring substrate 3 is opposed to the substrate 1 thus obtained through the anisotropic conductive adhesive 5, and the new film wiring substrate 3 is heated and pressurized with the heating tool T, the substrate 1 is again A semiconductor module M as shown in FIG.

  At this time, in particular, since the anisotropic conductive adhesive 5 hardly remains in the gap between the wiring patterns 2A of the substrate 1, the new anisotropic conductive adhesive 5 easily enters the gap and fills the gap. .

  In addition, since the anisotropic conductive adhesive 5 hardly remains on the upper surface of the wiring pattern 2A of the substrate 1 regardless of the T portion and the S portion, the newly supplied anisotropic conductive adhesive 5 is removed from the substrate 1. And the film wiring board 3 do not protrude.

  As a result, the wiring pattern 2A of the substrate 1 and the wiring pattern 4A of the film wiring substrate 3 are reliably electrically connected. That is, it is possible to obtain a semiconductor module in which the substrate 1 can be reused smoothly without reducing the connection reliability between the substrate 1 after the film wiring substrate 3 is peeled off and the new film wiring substrate 3.

  In addition, the present invention is not limited to the above-described embodiments as they are, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above-described embodiments.

Sectional drawing of the semiconductor module based on Embodiment in this invention, and the figure explaining the process of peeling a film wiring board from a board | substrate. Sectional drawing of the conventional semiconductor module, and the figure explaining the process of peeling a film wiring board from a board | substrate.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2A ... (Wiring board) wiring pattern, 3 ... Film wiring board, 4A ... (Film wiring board) wiring pattern, 5 ... Connection member (anisotropic conductive adhesive).

Claims (3)

  1. A plurality of wiring patterns formed on the substrate with a predetermined interval and a plurality of wiring patterns formed on the film wiring substrate with a predetermined interval are electrically connected via a connecting member, It is a semiconductor module that enables a film wiring board that is defective or unnecessary to be peeled off from the board and reused.
    The distance between the wiring patterns formed on the substrate is set within 20 times the particle size of the particles constituting the connection member,
    The distance between wiring patterns formed on the film wiring board is set to about 300 μm,
    The semiconductor module according to claim 1, wherein the wiring pattern of the substrate and the wiring pattern of the film wiring substrate are formed at an equal pitch.
  2.   The semiconductor module according to claim 1, wherein the connection member that connects the substrate and the film wiring substrate is an anisotropic conductive adhesive (ACF).
  3. A repair method in which a defective or unnecessary film wiring substrate is peeled off from the substrate using the semiconductor module according to claim 1 or 2, and the substrate is reused.
    A method for manufacturing a semiconductor module, comprising:
JP2007077305A 2007-03-23 2007-03-23 Semiconductor module and manufacturing method therefor Pending JP2008235822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007077305A JP2008235822A (en) 2007-03-23 2007-03-23 Semiconductor module and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007077305A JP2008235822A (en) 2007-03-23 2007-03-23 Semiconductor module and manufacturing method therefor

Publications (1)

Publication Number Publication Date
JP2008235822A true JP2008235822A (en) 2008-10-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007077305A Pending JP2008235822A (en) 2007-03-23 2007-03-23 Semiconductor module and manufacturing method therefor

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JP (1) JP2008235822A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2498871A (en) * 2012-01-25 2013-07-31 In2Tec Ltd Recycling printed circuit assemblies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2498871A (en) * 2012-01-25 2013-07-31 In2Tec Ltd Recycling printed circuit assemblies
US9706693B2 (en) 2012-01-25 2017-07-11 In2Tec Limited Recyclable circuit assembly

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