JP2008205404A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
- Publication number
- JP2008205404A JP2008205404A JP2007042924A JP2007042924A JP2008205404A JP 2008205404 A JP2008205404 A JP 2008205404A JP 2007042924 A JP2007042924 A JP 2007042924A JP 2007042924 A JP2007042924 A JP 2007042924A JP 2008205404 A JP2008205404 A JP 2008205404A
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- Prior art keywords
- impurity diffusion
- insulating film
- region
- film
- forming
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
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- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
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- 229910021332 silicide Inorganic materials 0.000 claims abstract description 41
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 32
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- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
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- 238000004544 sputter deposition Methods 0.000 description 4
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- 239000010936 titanium Substances 0.000 description 3
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- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 238000000137 annealing Methods 0.000 description 2
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- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
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- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
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- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Abstract
【解決手段】フローティングゲート8a、中間絶縁膜12、及びコントロールゲート16aを備えたフラッシュメモリセルFLを形成する工程と、第1、第2不純物拡散領域24a、24bを形成する工程と、シリコン基板1とフローティングゲート8aの表面を熱酸化する工程と、レジストパターン39の窓39bを通じて一部領域PRにおけるトンネル絶縁膜5をエッチングする工程と、一部領域PRにおける第1不純物拡散領域24a上に金属シリサイド層40を形成する工程と、フラッシュメモリセルFLを覆う層間絶縁膜43を形成する工程と、層間絶縁膜43の第1ホール43a内に、金属シリサイド層40に接続された導電性プラグ44を形成する工程とを有する半導体装置の製造方法による。
【選択図】図35
Description
本発明の実施の形態の説明に先立ち、本発明の予備的事項について説明する。
図33〜図35は、本実施形態に係る半導体装置の製造途中の断面図である。
前記半導体基板の表層に間隔をおいて形成された第1、第2不純物拡散領域と、
少なくとも前記第1、第2不純物拡散領域上とその間の前記半導体基板上とに形成された熱酸化膜と、
前記熱酸化膜の上に第1導電膜よりなるフローティングゲート、中間絶縁膜、及び第2導電膜よりなるコントロールゲートを順に積層してなり、前記第1、第2不純物拡散領域をソース/ドレイン領域とするフラッシュメモリセルと、
前記フラッシュメモリセルを覆い、前記第1不純物拡散領域の上方に第1ホールを備えた層間絶縁膜と、
前記第1ホール内に形成された第1導電性プラグとを有し、
前記熱酸化膜が前記第1不純物拡散領域の一部領域上で除去されたと共に、該第1部領域の前記第1不純物拡散領域上に金属シリサイド層が形成され、該金属シリサイド層と前記導電性プラグとが接続されたことを特徴とする半導体装置。
前記半導体基板の上にゲート絶縁膜とゲート電極とを積層してなり、前記第3、第4不純物拡散領域をソース/ドレイン領域とするMOSトランジスタとを更に有し、
前記第2不純物拡散領域と前記第3不純物拡散領域とが隣接して形成されたことを特徴とする付記1に記載の半導体装置。
前記コンタクト領域上の前記層間絶縁膜に第2ホールが形成され、
前記第2ホール内に、前記ゲート電極と電気的に接続された第2導電性プラグが形成されたことを特徴とする付記2に記載の半導体装置。
前記中間絶縁膜の上に第2導電膜を形成する工程と、
前記第1導電膜、前記中間絶縁膜、及び前記第2導電膜をパターニングすることにより、フローティングゲート、前記中間絶縁膜、及びコントロールゲートを備えたフラッシュメモリセルを形成する工程と、
前記コントロールゲートの横の前記半導体基板に、前記フラッシュメモリセルのソース/ドレイン領域となる第1、第2不純物拡散領域を形成する工程と、
前記第1、第2不純物拡散領域を形成した後、前記半導体基板と前記フローティングゲートのそれぞれの表面を熱酸化する工程と、
前記熱酸化の後、前記熱酸化膜と前記フラッシュメモリセルの上に、前記第1不純物拡散領域の一部領域の上方に窓を備えたレジストパターンを形成する工程と、
前記窓を通じて前記一部領域における前記熱酸化膜をエッチングして除去する工程と、
前記レジストパターンを除去する工程と、
前記一部領域における前記第1不純物拡散領域上に金属シリサイド層を形成する工程と、
前記フラッシュメモリセルを覆う層間絶縁膜を形成する工程と、
前記一部領域の上の前記層間絶縁膜に第1ホールを形成する工程と、
前記第1ホール内に、前記金属シリサイド層に接続された導電性プラグを形成する工程と、
を有することを特徴とする半導体装置の製造方法。
前記ゲート電極の横の前記半導体基板に、前記MOSトランジスタのソース/ドレイン領域として、前記第1、第2不純物拡散領域よりも低い不純物濃度の第3、第4不純物拡散領域を形成する工程を更に有し、
前記第3不純物拡散領域を前記第2不純物拡散領域に隣接して形成することを特徴とする付記10に記載の半導体装置の製造方法。
前記一部領域における前記熱酸化膜を除去する工程において、前記コンタクト領域における前記中間絶縁膜をエッチングして除去すると共に、
前記金属シリサイド層を形成する工程において、前記コンタクト領域における前記ゲート電極の上面にも前記金属シリサイド層を形成し、
前記層間絶縁膜に前記第1ホールを形成する工程において、前記コンタクト領域の上の前記層間絶縁膜に第2ホールを形成して、
前記第1導電性プラグを形成する工程において、前記ゲート電極上の前記金属シリサイド層に接続された第2導電性プラグを前記第2ホール内に形成することを特徴とする付記11に記載の半導体装置の製造方法。
前記周辺回路領域における前記熱酸化膜を除去する工程の後に、該周辺回路領域における前記シリコン基板の上面にゲート絶縁膜を形成する工程とを更に有し、
前記第2導電膜を形成する工程において、前記周辺回路領域における前記ゲート絶縁膜の上にも前記第2導電膜を形成し、
前記コンタクト領域の上方の前記第2導電膜を除去する工程において、前記周辺回路領域における前記第2導電膜をパターニングして周辺回路用ゲート電極にすることを特徴とする付記13に記載の半導体装置の製造方法。
前記レジストパターンを形成する工程において前記窓を前記絶縁性サイドウォールから外して形成することにより、前記熱酸化膜をエッチングする工程において、前記第1不純物拡散領域の前記一部領域と前記絶縁性サイドウォールとの間に前記熱酸化膜を残すことを特徴とする付記10に記載の半導体装置の製造方法。
Claims (10)
- 半導体基板と、
前記半導体基板の表層に間隔をおいて形成された第1、第2不純物拡散領域と、
少なくとも前記第1、第2不純物拡散領域上とその間の前記半導体基板上とに形成された熱酸化膜と、
前記熱酸化膜の上に第1導電膜よりなるフローティングゲート、中間絶縁膜、及び第2導電膜よりなるコントロールゲートを順に積層してなり、前記第1、第2不純物拡散領域をソース/ドレイン領域とするフラッシュメモリセルと、
前記フラッシュメモリセルを覆い、前記第1不純物拡散領域の上方に第1ホールを備えた層間絶縁膜と、
前記第1ホール内に形成された第1導電性プラグとを有し、
前記熱酸化膜が前記第1不純物拡散領域の一部領域上で除去されたと共に、該第1部領域の前記第1不純物拡散領域上に金属シリサイド層が形成され、該金属シリサイド層と前記導電性プラグとが接続されたことを特徴とする半導体装置。 - 前記半導体基板の表層に間隔をおいて形成され、前記第1、第2不純物拡散領域よりも不純物濃度が低い第3、第4不純物拡散領域と、
前記半導体基板の上にゲート絶縁膜とゲート電極とを積層してなり、前記第3、第4不純物拡散領域をソース/ドレイン領域とするMOSトランジスタとを更に有し、
前記第2不純物拡散領域と前記第3不純物拡散領域とが隣接して形成されたことを特徴とする請求項1に記載の半導体装置。 - 前記第1〜前記第4不純物拡散領域が同じ導電型であり、前記MOSトランジスタが前記フラッシュメモリセルに対する選択トランジスタとして機能することを特徴とする請求項2に記載の半導体装置。
- 前記ゲート電極の上面において、コンタクト領域以外の部分に前記中間絶縁膜と前記第2導電膜とがこの順に形成されたと共に、
前記コンタクト領域上の前記層間絶縁膜に第2ホールが形成され、
前記第2ホール内に、前記ゲート電極と電気的に接続された第2導電性プラグが形成されたことを特徴とする請求項2に記載の半導体装置。 - 前記フローティングゲートの横に絶縁性サイドウォールが形成され、前記第1不純物拡散領域の前記一部領域と前記絶縁性サイドウォールとの間に、前記熱酸化膜が残存することを特徴とする請求項1に記載の半導体装置。
- 半導体基板の上に、熱酸化膜、第1導電膜、及び中間絶縁膜を順に形成する工程と、
前記中間絶縁膜の上に第2導電膜を形成する工程と、
前記第1導電膜、前記中間絶縁膜、及び前記第2導電膜をパターニングすることにより、フローティングゲート、前記中間絶縁膜、及びコントロールゲートを備えたフラッシュメモリセルを形成する工程と、
前記コントロールゲートの横の前記半導体基板に、前記フラッシュメモリセルのソース/ドレイン領域となる第1、第2不純物拡散領域を形成する工程と、
前記第1、第2不純物拡散領域を形成した後、前記半導体基板と前記フローティングゲートのそれぞれの表面を熱酸化する工程と、
前記熱酸化の後、前記熱酸化膜と前記フラッシュメモリセルの上に、前記第1不純物拡散領域の一部領域の上方に窓を備えたレジストパターンを形成する工程と、
前記窓を通じて前記一部領域における前記熱酸化膜をエッチングして除去する工程と、
前記レジストパターンを除去する工程と、
前記一部領域における前記第1不純物拡散領域上に金属シリサイド層を形成する工程と、
前記フラッシュメモリセルを覆う層間絶縁膜を形成する工程と、
前記一部領域の上の前記層間絶縁膜に第1ホールを形成する工程と、
前記第1ホール内に、前記金属シリサイド層に接続された導電性プラグを形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記フラッシュメモリセルを形成する工程において、前記フラッシュメモリセルから間隔をおいた部分の前記熱酸化膜の上に、前記第1導電膜、前記中間絶縁膜、及び前記第2導電膜を残し、該残された第1導電膜をMOSトランジスタのゲート電極とする共に、
前記ゲート電極の横の前記半導体基板に、前記MOSトランジスタのソース/ドレイン領域として、前記第1、第2不純物拡散領域よりも低い不純物濃度の第3、第4不純物拡散領域を形成する工程を更に有し、
前記第3不純物拡散領域を前記第2不純物拡散領域に隣接して形成することを特徴とする請求項6に記載の半導体装置の製造方法。 - 前記第1〜前記第4不純物拡散領域を同じ導電型にし、前記MOSトランジスタを前記フラッシュメモリセルに対する選択トランジスタとして機能させることを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記ゲート電極のコンタクト領域の上方の前記第2導電膜を除去する工程を更に有し、
前記一部領域における前記熱酸化膜を除去する工程において、前記コンタクト領域における前記中間絶縁膜をエッチングして除去すると共に、
前記金属シリサイド層を形成する工程において、前記コンタクト領域における前記ゲート電極の上面にも前記金属シリサイド層を形成し、
前記層間絶縁膜に前記第1ホールを形成する工程において、前記コンタクト領域の上の前記層間絶縁膜に第2ホールを形成して、
前記第1導電性プラグを形成する工程において、前記ゲート電極上の前記金属シリサイド層に接続された第2導電性プラグを前記第2ホール内に形成することを特徴とする請求項7に記載の半導体装置の製造方法。 - 前記第2導電膜を形成する工程の前に、前記半導体基板の周辺回路領域に形成された前記熱酸化膜、前記第1導電膜、及び前記中間絶縁膜を除去する工程と、
前記周辺回路領域における前記熱酸化膜を除去する工程の後に、該周辺回路領域における前記シリコン基板の上面にゲート絶縁膜を形成する工程とを更に有し、
前記第2導電膜を形成する工程において、前記周辺回路領域における前記ゲート絶縁膜の上にも前記第2導電膜を形成し、
前記コンタクト領域の上方の前記第2導電膜を除去する工程において、前記周辺回路領域における前記第2導電膜をパターニングして周辺回路用ゲート電極にすることを特徴とする請求項9に記載の半導体装置の製造方法。
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US12/013,709 US8466509B2 (en) | 2007-02-22 | 2008-01-14 | Semiconductor device having a contact plug connecting to a silicide film formed on a diffusion region of a flash memory cell |
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CN105097954B (zh) * | 2014-05-23 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
CN105336698B (zh) * | 2014-07-10 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN105448692B (zh) * | 2014-09-29 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
CN104538362B (zh) * | 2014-12-29 | 2019-02-05 | 上海华虹宏力半导体制造有限公司 | Otp器件的结构和制作方法 |
CN105892149A (zh) * | 2016-06-07 | 2016-08-24 | 京东方科技集团股份有限公司 | 发光组件、背光模组和显示装置 |
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KR20080078540A (ko) | 2008-08-27 |
US8865546B2 (en) | 2014-10-21 |
CN102969279B (zh) | 2015-06-10 |
TWI375302B (en) | 2012-10-21 |
TW200836298A (en) | 2008-09-01 |
US20080203465A1 (en) | 2008-08-28 |
EP1962332A2 (en) | 2008-08-27 |
EP1962332A3 (en) | 2009-04-29 |
CN101252133A (zh) | 2008-08-27 |
CN102969279A (zh) | 2013-03-13 |
JP5076548B2 (ja) | 2012-11-21 |
US8466509B2 (en) | 2013-06-18 |
CN101252133B (zh) | 2013-03-06 |
KR100965501B1 (ko) | 2010-06-24 |
US20130005098A1 (en) | 2013-01-03 |
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