JP2008132635A - Thermal head - Google Patents

Thermal head Download PDF

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JP2008132635A
JP2008132635A JP2006319505A JP2006319505A JP2008132635A JP 2008132635 A JP2008132635 A JP 2008132635A JP 2006319505 A JP2006319505 A JP 2006319505A JP 2006319505 A JP2006319505 A JP 2006319505A JP 2008132635 A JP2008132635 A JP 2008132635A
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layer
thermal head
wear
protective layer
heating resistor
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JP4397923B2 (en
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Naoki Takojima
直樹 田古嶋
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Toshiba Hokuto Electronics Corp
東芝ホクト電子株式会社
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Abstract

PROBLEM TO BE SOLVED: To manufacture a thermal head having a highly reliable and high-grade wear-resistant layer with a high yield.
A glaze layer 11b is formed on an insulating substrate 11a of a support substrate 11, a heating resistor layer 12 made of a cermet film is formed thereon, and an electrode 13 made of an individual electrode 13a and a common electrode 13b is formed thereon. Then, the protective layer 14 mainly composed of Si—O—N is formed on at least the heat generating portion 12 a of the heat generating resistor layer 12. On this protective layer 14, an intermediate layer 15 made of a cermet film similar to the heating resistor layer 12 is formed. For example, TaSiO 2 is suitable for the intermediate layer 15. Then, an abrasion-resistant layer 16 made of a metal film containing metal nitride as a main component is formed above the protective layer 14 via the intermediate layer 15.
[Selection] Figure 1

Description

  The present invention relates to a thermal head used as an image recording device.

  The thermal head is used as an image recording device that heats a heating resistor provided on a head substrate portion and records characters on thermal paper, plate-making film, photographic paper, media, or the like. In addition, it has advantages such as low noise and low running cost, and has recently attracted attention as an output device such as a video printer, an imager, and a seal printer.

  A conventional thermal head will be described with reference to FIG. FIG. 4 is a partially enlarged sectional view. A glaze layer 22 that functions as a heat storage layer or a smooth layer is provided on an insulating substrate 21 made of ceramic or the like. A heating resistor layer 23 constituting a plurality of heating resistors is provided on the glaze layer 22, and a plurality of electrodes 24 are provided on the heating resistor layer 23. The electrode 24 includes an individual electrode 24 a and a common electrode 24 b provided on the heating resistor layer 23. A gap having a predetermined length is provided between the individual electrode 24a and the common electrode 24b, and the heating resistor layer 23 in the gap functions as the heating part 23a.

  A protective layer 25 made of an insulating material for protecting the heat generating portion 23a is formed on the heat generating portion 23a by sputtering or the like. On the protective layer 25, an abrasion resistant layer 26 for preventing the protective layer 25 from being worn is provided by, for example, an ion plating method. The protective layer 25 is made of a film mainly composed of, for example, a Si—O—N-based material, and the wear-resistant layer 26 is made of a hard film mainly composed of a metal nitride such as TiN (titanium nitride) (for example). For example, see Patent Document 1).

In the above configuration, when printing on a recording medium such as recording paper, the recording medium is moved along the wear-resistant layer 26 in the vicinity of the heat generating portion 23a. At the same time, a current is supplied to the heat generating portion 23a to heat it, and printing on the recording medium is performed by the heat.
JP 2006-231523 A

  However, as shown in the region P of FIG. 4, if there is a film defect such as a pinhole 27 in a part of the protective layer 25, the wear-resistant layer 26 and the individual electrodes constituting the electrode 24 in the pinhole 27 portion 24a or the common electrode 24b is electrically short-circuited. And in the electrical inspection at the time of manufacture of a thermal head, it is determined that the resistance value of the heat generating portion 23a of the heat generating resistor layer 23 is apparently reduced. Even if it is within the short standard, if the wear-resistant layer 26 having a small resistance value is connected to the individual electrode 24a or the common electrode 24b in the pinhole 27 portion, In the print inspection in which the current value is higher than that in the normal operation, a printing failure occurs. For these reasons, the yield in the manufacturing process of the thermal head may be lowered. The resistance value of the heat generating part 23a is measured between the individual electrode 24a and the common electrode 24b, for example.

  SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned drawbacks, to improve the yield in the manufacturing process of the thermal head, and to provide a thermal head having a highly reliable and high-quality wear-resistant layer.

  In order to achieve the above object, a thermal head according to the present invention includes a support substrate, a heating resistor layer formed on the support substrate, and a heating resistor layer formed on the heating resistor layer. In the thermal head comprising: an electrode for supplying a current to the heat generating portion; a protective layer covering the heat generating portion of the heat generating resistor layer; and a wear resistant layer containing metal nitride formed on the protective layer. An intermediate layer made of a cermet film is interposed between the wear layer and the protective layer.

  According to the configuration of the present invention, the yield in the manufacturing process of the thermal head is improved, and a thermal head having a high-quality wear-resistant layer with high reliability can be easily manufactured.

  Embodiments of the present invention will be described below with reference to the drawings. In addition, the same code | symbol is attached | subjected to the mutually same or similar part, and duplication description is abbreviate | omitted. However, the drawings are schematic and ratios of dimensions and the like are different from actual ones. Here, FIG. 1 is a diagram in which a part of the head substrate is extracted, FIG. 1A is a top view thereof, FIG. 1B is a cross-sectional view taken along line XX in FIG. FIG.1 (c) is sectional drawing which extracted a part of FIG.1 (b).

  As shown in FIGS. 1A and 1B, the support substrate 11 has a structure in which a glaze layer 11b that functions as a heat storage layer and a smooth layer is provided on an insulating substrate 11a such as ceramic. A heating resistor layer 12 made of a cermet film is formed on the support substrate 11, and an electrode 13 is provided on the heating resistor layer 12. The electrode 13 has a pair of an individual electrode 13a and a common electrode 13b, and a plurality of pairs of the individual electrode 13a and the common electrode 13b are arranged in parallel, for example. A gap G is provided between the individual electrode 13a and the common electrode 13b, and the heating resistor layer 12 located in the gap G portion functions as the heating part 12a. Here, the ends of the individual electrode 13a and the common electrode 13b on the heat generating portion 12a side are referred to as leading edges.

  A protective layer 14 composed mainly of Si—O—N is formed at least on necessary portions on the heat generating portion 12a, for example, on the heat generating portion 12a and on the electrode 13 in the vicinity thereof. This protective layer 14 is a hard and dense insulator material, and has a passivation function that covers the heat generating portion 12a and the electrode 13 and protects against corrosion caused by contact with moisture contained in the atmosphere.

An intermediate layer 15 that is a characteristic technical matter of the present invention is formed on a part of the protective layer 14, for example, an upper part of the heat generating portion 12a. For example, the same material as the heating resistor layer 12 is used for the intermediate layer 15, and a Ta—Si—O-based cermet film containing Ta, Si, or O (oxygen) such as TaSiO 2 is preferably used. The intermediate layer 15 is formed by sputtering or the like using, for example, a target made of Ta and SiO 2 in the same manner as in the case of forming the heating resistor layer 12. In this case, the resistivity of the intermediate layer 15 and the heating resistor layer 12 are appropriately set as described later by adjusting the ratio of Ta and SiO 2 constituting the target and the sputtering conditions.

  In addition, the intermediate layer 15 may be a high melting point metal such as Ta, Ti, W, Mo, Co, Ni, Nb, or a resistor material mainly composed of Si and O. Specifically, for example, a cermet film formed from a TaSiNO, TiSiCO, or NbSiO-based resistor material can be used.

  A wear resistant layer 16 is formed on the intermediate layer 15. The wear-resistant layer 16 is formed of a hard metal film mainly composed of a metal nitride such as TiN. The wear-resistant layer 16 has an antistatic function for preventing the protective layer 14 from being worn by sliding contact with a recording medium such as recording paper and preventing the protective layer 14 from being charged by sliding contact. It also has.

  Here, the wear-resistant layer 16 is formed in a laminated structure as shown in FIG. 1 (c), for example, a first layer 161 such as Ti, Cr, etc. located on the intermediate layer 15 side, and the first layer 161, For example, it is composed of a second layer 162 made of, for example, TiN or CrN on the outer side farther from the intermediate layer 15 than the first layer 161. Here, the first layer 161 made of Ti, Cr or the like functions as an adhesive layer with the intermediate layer 15.

In addition, examples of the metal nitride of the wear resistant layer 16 include nitrides of refractory metals. Among them, TaN (tantalum nitride), WN (tungsten nitride), MoN (molybdenum nitride), and the like, which are nitrides of refractory metals with high wear resistance, can be suitably used. Even when such a metal nitride is used for the wear-resistant layer 16, Ti (1-x) Cr (x) (X = 0 to 1) composed of Ti and Cr should be used as an adhesive layer. Can do.

  Next, an example of a method for manufacturing the above-described thermal head will be described with reference to FIGS. Here, FIG. 2 is a cross-sectional view showing a laminated structure composed of various material films on the head substrate.

For example, a glaze layer 11b having a film thickness of 100 to 200 μm, for example, 100 μm, is formed on a ceramic insulating substrate 11 a such as Al 2 O 3 (alumina) to form the support substrate 11. Here, in the formation of the glaze layer 11b, a glass paste obtained by adding and mixing a suitable organic solvent and solvent to a glass powder of SiO 2 (silicon oxide) is applied and formed by a known screen printing method. Then, a glass film having a required film thickness is deposited on the surface of the support substrate 11 by baking at a predetermined temperature. In addition, this glaze layer 11b may be a polyimide resin or the like.

Thereafter, a heating resistor film made of TaSiO 2 and having a thickness of about 0.05 μm is formed on the support substrate 11 by sputtering. Further, an electrode film made of, for example, Al (aluminum) and having a film thickness of 0.5 μm to 1 μm, for example, 0.5 μm, is formed on the heating resistor film by sputtering. Thereafter, the heating resistor film and the electrode film are patterned by a photoengraving process to form the heating resistor layer 12 and the electrodes 13, for example, individual patterns 13a and common electrodes 13b. At this time, a gap G is provided between the individual electrode 13 a and the common electrode 13 b, and the heat generating portion 12 a is formed in the gap G portion of the heat generating resistor layer 12.

  Thereafter, a mask jig (shadow mask) is applied to a necessary portion on the electrode 13 including the leading edge in the vicinity of the heat generating portion 12a and the heat generating portion 12a, for example, so as to cover at least the heat generating portion 12a of the heat generating resistor layer 12. The protective layer 14 made of an insulating material made of Si—O—N and having a thickness of 2 to 5 μm, for example, 4 μm, is selectively formed by the used sputtering. Here, the composition of Si, O, and N in the protective layer 14 can be variously changed. When the protective layer 14 decreases the O component and increases the N component, the passivation function described above increases, but the thermal expansion coefficient increases and cracks and the like are likely to occur. For this reason, a SiON (silicon oxynitride) film can be particularly preferably used.

Then, the intermediate layer 15 is formed on the protective layer 14 in the same area as or wider than the area where the wear-resistant layer 16 is formed. In forming the intermediate layer 15, prior to the formation of the intermediate layer 15, the inside of the vacuum chamber is evacuated to a high vacuum of about 1 × 10 −4 Pa while being heated to about 200 ° C. with a sheathed heater or the like. Thereafter, argon gas is introduced, a reverse bias potential of about −100 V is applied to the head substrate side provided with the heating resistor layer 12, the electrode 13, the protective layer 14, etc., and the surface is etched and cleaned.

Thereafter, using a target made of Ta and SiO 2 , an intermediate layer 15 of a cermet film made of TaSiO 2 is selectively deposited, for example, by sputtering using a mask jig. In the deposition of the intermediate layer 15, the resistivity of the intermediate layer 15 can be controlled by reactive sputtering in which O 2 gas is introduced into the chamber. The Ta composition ratio of the target is desirably 60 mol% or less in consideration of the resistivity of the intermediate layer 15 to be formed.

Here, the resistivity of the intermediate layer 15 is set in a range of 10 2 to 10 6 mΩ · cm, which is higher in conductivity than the protective layer 14. When the resistivity of the intermediate layer 15 is smaller than 10 2 mΩ · cm, when the protective layer 14 has a film defect such as a pinhole, a leakage current increases, and a short-circuit defect described later tends to occur. On the other hand, if the resistivity of the intermediate layer 15 is greater than 10 6 mΩ · cm, the antistatic function of the wear resistant layer 16 is degraded.

  And the film thickness of the intermediate | middle layer 15 has the suitable range of 0.05-0.5 micrometer. When the film thickness is less than 0.05 μm, it becomes difficult to control the composition of the cermet film, and the accuracy of the resistivity of the intermediate layer 15 decreases. Further, when the film thickness exceeds 0.5 μm, the resistivity decreases, and the leakage current of the electrode 13 increases when pinholes exist in the protective layer 14.

  Next, using Ti as a raw material, Ti is evaporated at a hollow cathode to form a film having a thickness of, for example, 0.3 μm, and the first layer 161 portion of the wear-resistant layer 16 is formed. Thereafter, nitrogen gas is introduced into the film forming chamber while applying a substrate bias, a TiN film is formed to a thickness of 1.0 μm, for example, and the second layer 162 portion of the wear resistant layer 16 is formed. A 3 μm wear-resistant layer 16 is formed.

In the wear-resistant layer 16, the first layer 161 positioned on the protective layer 14 side is formed of Ti, and the second layer 162 positioned outside the first layer 161 is formed of TiN. However, Cr can be used instead of Ti. Further, as described above, both Ti and Cr metals represented by Ti (1-x) Cr (x) (X = 0 to 1) can be used.

In this case, since the first layer 161 functions as an adhesive layer that enhances the adhesion between the second layer 162 of high-hardness metal nitride and the intermediate layer 15, the Ti (1-x) Cr (x) (X = 0 to 1) are desirable. Further, in order to ensure wear resistance, the second layer 162 has a high hardness metal component represented by Ti (1-x) Cr (x) (X = 0 to 1) of 30 at. It is desirable that the balance is substantially nitrogen as a main component. Moreover, C (carbon) may be mixed for the purpose of further improving the wear resistance. In this case, a substrate bias is applied to the substrate of the film forming chamber, the chamber pressure is set to the 10 −1 Pa level, and nitrogen gas and carbon source, for example, acetylene gas is controlled at a flow rate ratio of 1: 1, and C ( For example, carbon) is introduced into the outermost surface of the wear-resistant layer 16.

  According to the configuration described above, the intermediate layer 15 is provided on the protective layer 14 and between the first layer 161. Here, even if a pinhole is generated in the protective layer 14 and the intermediate layer 15 and the electrode 13 are electrically short-circuited in the pinhole portion, the resistivity of the intermediate layer 15 is moderately higher than that of the wear resistant layer 16. Therefore, the leakage current in the electrode 13 is suppressed. As a result, short-circuit defects and printing defects are prevented, and the yield in the manufacturing process is greatly improved.

Next, the effect of improving the manufacturing yield of the thermal head will be described with reference to FIG. 3 in comparison with the conventional thermal head. FIG. 3 is a table showing the proportion of short-circuit defects in the electrical inspection of 100 prototypes and print defects in the print inspection. In this embodiment, TaSiO 2 having a thickness of 0.1 μm and a resistivity of 400 mΩ · cm is formed as the intermediate layer 15. The laminated structure of other various material films is as described in FIG. On the other hand, the structure of the conventional thermal head for comparison is the same as that of the present embodiment except that the intermediate layer 15 is not formed.

  As shown in FIG. 3, in the above-described conventional thermal head, the average value of the short-circuit defect rate in the electrical inspection of 100 prototypes is 13%, and the average value of the print defect rate in the print inspection is 7%. On the other hand, in the case of this embodiment, both defect rates are 0%, and it has been demonstrated that the defect rate is greatly reduced. As described above, in the thermal head of this embodiment, the intermediate layer 15 as described above is interposed between the protective layer 14 and the wear-resistant layer 16, thereby greatly improving the yield in the manufacturing process of the thermal head. I understand that.

Even if the intermediate layer 15 is made of NbSiO, TaSiNO, or TiSiCO-based cermet film other than TaSiO 2 , the effect due to the insertion of the intermediate layer 15 is similarly caused to some extent. Further, even when a nitride of a refractory metal such as TaN, WN, or MoN is used as the metal nitride of the wear resistant layer 16, the effect of inserting the intermediate layer 15 similarly occurs.

  In the present embodiment, the intermediate layer 15 is interposed between the protective layer 14 and the wear-resistant layer 16 so that the film peeling of the wear-resistant layer 16 is stable in the laminated structure as shown in FIG. Will not occur. This effect is remarkable when the protective layer 14 is a Si—O—N silicon oxynitride film.

As in the prior art, in the laminated structure in which the first layer 161 of the wear-resistant layer made of Ti (1-x) Cr (x) (X = 0 to 1) is formed on the surface of the protective layer 14, the protection A solid-phase reaction proceeds between the layer 14 and the first layer 161, and N (nitrogen) contained in the protective layer 14 and Ti or Cr are chemically bonded to generate TiN or CrN. Here, this solid-phase reaction occurs even at a low temperature such as 300 to 400 ° C., and occurs in the step of resin-sealing the drive IC on the thermal head, for example, although not described in the above embodiment. As this solid-phase reaction proceeds, the function of the first layer 161 as an adhesive layer disappears, and film abrasion of the wear-resistant layer 16 including the first layer 162 thereon is likely to occur.

On the other hand, as shown in FIG. 2, the intermediate layer 15 is interposed between the protective layer 14 and the first layer 161 of the wear-resistant layer, so that the intermediate layer 15 is interposed between the protective layer 14 and the first layer 161. The solid phase reaction is blocked. The intermediate layer 15 has a function of suppressing and capturing N diffusion in the film, and prevents nitriding of Ti (1-x) Cr (x) (X = 0 to 1) of the first layer 161. . Such an intermediate layer 15 is preferably formed of a resistor material made of a refractory metal such as Ta, Ti, W, Mo, Co, Ni, and Nb, Si, and O (oxygen). If a refractory metal is present in the intermediate layer 15, it reacts with N and is trapped as its nitride. Here, as described above, a resistor material made of TaSiO 2 is particularly preferable. In addition, the film thickness of the intermediate layer 15 is preferably 0.05 μm or more from the viewpoint of maintaining the function of preventing the solid-phase reaction.

  In this way, the resistance to film peeling of the thermal head formed in the laminated structure is greatly improved, so that it is possible to easily manufacture a thermal head having a high-quality wear-resistant layer with high reliability.

  Further, the intermediate layer 15 can be formed of the same material as the heating resistor layer 12, and it is not necessary to develop a new material or introduce a new manufacturing facility, so that the thermal head can be manufactured at high productivity and at low cost. Can be manufactured.

  In the present embodiment, for example, an intermediate layer 15 is formed of a resistor material similar to the heating resistor layer between the protective layer 14 of the thermal head and the wear-resistant layer 16th, thereby pinholes in the protective layer 14. As a result, short-circuit defects and printing defects due to film defects such as the above are greatly reduced. Further, a thermal head having a highly reliable and high-grade wear-resistant layer can be manufactured very easily. In this way, a high-quality thermal head can be manufactured with high productivity, low cost, and high yield.

  Although the preferred embodiments of the present invention have been described above, the above-described embodiments do not limit the present invention. Those skilled in the art can make various modifications and changes in specific embodiments without departing from the technical idea and technical scope of the present invention.

  For example, in the above embodiment, the wear-resistant layer 16 covers a part of the intermediate layer 15, but the wear-resistant layer 16 may cover the entire intermediate layer 15. Further, the intermediate layer 15 may cover the entire exposed portion of the protective layer 14.

  The cermet film used for the intermediate layer 15 or the heating resistor layer 12 may be a composite of a refractory metal and a ceramic other than those described in the above embodiment.

It is a figure for demonstrating embodiment of this invention, Comprising: (a) is a top view, (b) is the XX arrow sectional drawing, (c) is a partial sectional view. It is sectional drawing which shows the laminated structure of the various material film | membrane of the thermal head concerning embodiment of this invention. It is the table | surface which showed the ratio of the short defect in the electrical test | inspection of the prototype explaining the effect of this invention, and the printing defect in a printing test | inspection. It is typical sectional drawing which shows the thermal head of a prior art.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11 ... Support substrate, 11a ... Insulating substrate, 11b ... Glaze layer, 12 ... Heating resistor layer, 12a ... Heat generating part, 13 ... Electrode, 13a ... Individual electrode, 13b ... Common electrode, 14 ... Protective layer, 15 ... Intermediate layer , 16 ... wear-resistant layer, 161 ... first layer of the wear-resistant layer, 162 ... second layer of the wear-resistant layer

Claims (5)

  1. A supporting substrate, a heating resistor layer formed on the supporting substrate, an electrode formed on the heating resistor layer and supplying a current to a heating portion of the heating resistor layer, and the heating resistor layer In a thermal head comprising a protective layer covering the heat generating part and a wear-resistant layer containing metal nitride formed on the protective layer,
    A thermal head, wherein an intermediate layer made of a cermet film is interposed between the wear-resistant layer and the protective layer.
  2. The thermal head according to claim 1, wherein the resistivity of the intermediate layer is in a range of 10 2 to 10 6 mΩ · cm.
  3.   3. The thermal head according to claim 1, wherein the thickness of the intermediate layer is in the range of 0.05 μm to 0.5 μm.
  4. The wear-resistant layer has a laminated structure, and includes a first layer made of Ti (1-x) Cr (x) (X = 0 to 1) and an outer layer of TiN and CrN. A second layer made of at least one metal nitride, the protective layer is made of a Si—O—N-based material, and the intermediate layer is made of a resistor material made of a refractory metal, Si and O. The thermal head according to any one of claims 1 to 3, wherein the thermal head is provided.
  5. The thermal head according to claim 4, wherein the intermediate layer is formed of a TaSiO 2 resistor material.
JP2006319505A 2006-11-28 2006-11-28 Thermal head Active JP4397923B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012056279A (en) * 2010-09-13 2012-03-22 Toshiba Hokuto Electronics Corp Thermal head
JP2012206298A (en) * 2011-03-29 2012-10-25 Toshiba Hokuto Electronics Corp Thermal head, and manufacturing method therefor
JP2015020318A (en) * 2013-07-18 2015-02-02 東芝ホクト電子株式会社 Thermal print head and method for manufacturing the same
JPWO2013080915A1 (en) * 2011-11-28 2015-04-27 京セラ株式会社 Thermal head and thermal printer equipped with the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012056279A (en) * 2010-09-13 2012-03-22 Toshiba Hokuto Electronics Corp Thermal head
JP2012206298A (en) * 2011-03-29 2012-10-25 Toshiba Hokuto Electronics Corp Thermal head, and manufacturing method therefor
JPWO2013080915A1 (en) * 2011-11-28 2015-04-27 京セラ株式会社 Thermal head and thermal printer equipped with the same
JP2015020318A (en) * 2013-07-18 2015-02-02 東芝ホクト電子株式会社 Thermal print head and method for manufacturing the same

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