JP2008130699A - Wideband gap semiconductor device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wideband gap semiconductor device which has a high breakdown voltage characteristics, while reducing the manufacturing cost by utilizing selective embedding growth, and to provide a method of manufacturing the wideband gap semiconductor device. <P>SOLUTION: An n type drift layer 11 is grown on a 4H-SiC substrate 10, and then an opening of a mask member M1 is etched to form a recess Rs. By subjecting the structure with the mask member M1 to selective embedding epitaxial growth, a pad film 12 is formed as a first selective embedded growth layer, and subsequently a p-type anode side region 13 as a second selective embedded growth layer are formed. Since the interface region between the pad film 12 and the anode side region 13 as a p-n junction interface, hardly causes a large electric field encounter etching damages, a high breakdown voltage characteristic can be obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a wide band gap semiconductor device having a buried selective growth layer and a method for manufacturing the same.

  Silicon carbide (SiC), a kind of wide band gap semiconductor, is a III-V group compound semiconductor in which Si and C are combined at a component ratio of 1: 1, and is a material that has attracted particular attention in recent years. is there. A wide band gap semiconductor such as silicon carbide has a dielectric breakdown electric field about one digit higher than that of silicon, so that a high reverse breakdown voltage can be maintained even if a depletion layer in a pn junction or a Schottky junction is thinned. Therefore, when a wide band gap semiconductor is used, the thickness of the device can be reduced and the doping concentration can be increased. Therefore, it is expected to realize a power device with low on-resistance, high withstand voltage, and low loss. In addition to silicon carbide, wide band gap semiconductors include compound semiconductors such as GaN-based semiconductors and diamond.

  On the other hand, as a device using a compound semiconductor or the like, various elements of the device are formed on a substrate or an epitaxial growth layer for the purpose of enhancing various functions, and then a part of the device is locally etched to form a recess. An epitaxial growth layer (hereinafter referred to as a buried selective growth layer) is known. The buried selective growth layer is often formed when the dopant concentration or dopant concentration distribution for obtaining the desired function cannot be obtained by doping by the ion implantation method, or when the manufacturing cost becomes excessive. .

  For example, in Patent Document 1, in an optical semiconductor element using InP, which is a III-V group compound semiconductor, a mesa-type double heterostructure of an InP substrate is formed, and then the side portion is etched, and then epitaxial growth is performed. Thus, it is disclosed that a leakage current in the forward direction at the pn junction is reduced by forming a current blocking layer which is a buried selective growth layer. Patent Document 2 discloses that in an insulated gate transistor using a GaN-based semiconductor that is a wide band gap semiconductor, ion implantation is difficult by performing epitaxial growth after etching a source / drain formation region by plasma etching. It is disclosed that a source / drain region which is a buried selective growth layer containing a high concentration of dopant is formed in a GaN layer. In Patent Document 3, in a field effect transistor using GaAs, which is a III-V group compound semiconductor, a channel formation region is etched to form a recess, and then a part or all of the active region is embedded in the recess. It is disclosed that a high breakdown voltage characteristic and a stable operation are realized by regrowth as a growth layer.

JP-A-5-13882 JP-A-11-163334 JP 2001-250939 A

  In general, a wide band gap semiconductor has a high interatomic bonding force, and therefore requires a great deal of labor and equipment such as performing multi-stage implantation with different ion implantation energies during ion implantation. Therefore, the manufacturing cost can be reduced by the method of forming the buried growth layer as described in the above documents.

  However, during etching, a damage layer is formed on the bottom wall and side wall of the recess of the semiconductor substrate. In addition, the presence of the damaged layer has a problem that the breakdown voltage characteristic, which is an advantage of the wide band gap semiconductor, is deteriorated. Therefore, how to mitigate the adverse effect on the semiconductor device due to the damaged layer generated during etching is an important issue. Note that the damage layer is conspicuous in the case of dry etching using plasma. Plasma etching is advantageous in terms of manufacturing cost as compared with wet etching using liquid or simple gas etching, but conventionally, it has been difficult to apply without means for removing the damaged layer.

  An object of the present invention is to provide a wide band gap semiconductor device capable of maintaining a high breakdown voltage characteristic while forming a buried selective growth layer to reduce manufacturing cost, and a method for manufacturing the same.

  According to the method of manufacturing the wide band gap semiconductor device of the present invention, a recess is formed in a part of the first conductivity type base semiconductor layer by etching, and then the first conductivity type or intrinsic first buried selection is performed in the recess. In this method, after the growth layer is epitaxially grown, the second conductive type second buried selective growth layer is epitaxially grown.

  By this method, even if a damaged layer is formed by etching in the boundary region between the underlying semiconductor layer and the first buried selective growth layer, the epitaxial growth process is performed without removing the damaged layer. Manufacturing costs can be reduced by speeding up. In the wide band gap semiconductor device formed by this method, even if an etching damage layer exists in the boundary region between the base semiconductor layer and the first buried selective growth layer, the first pn junction is formed. There is almost no etching damage layer in the boundary region between the buried selective growth layer and the second buried selective growth layer. Therefore, when a forward or reverse electric field is applied, a leak current generated at the pn junction is suppressed, and a wide band gap semiconductor device suitable for a power device having a high withstand voltage function can be obtained.

  In the manufacturing method of the wide band gap semiconductor device, the manufacturing process can be continuously performed by performing the recess formation and the epitaxial growth using a common mask member.

  When the mask member is oxidized by the oxidation treatment of the wide band gap semiconductor, the effect of the present invention can be obtained even when a semiconductor material in which it is difficult to remove the etching damage layer of the underlying semiconductor layer by the sacrificial oxidation method. The substantial value is great in that it can be demonstrated.

  When etching is performed by reactive ion etching, particularly large etching damage occurs, but even in that case, the etching damage can be kept away from the pn junction, so that the power with high withstand voltage function can be achieved while proceeding quickly. A device can be formed.

  The wide band gap semiconductor device of the present invention includes a first conductivity type or intrinsic first buried selective growth layer surrounded by side and bottom surfaces by a first conductivity type underlying semiconductor layer, and a first buried type. And a second buried selective growth layer of the second conductivity type whose side and bottom surfaces are surrounded by the selective growth layer.

  As a result, there is almost no damage layer due to etching in the boundary region between the first buried selective growth layer and the second buried selective growth layer that becomes the pn junction. Therefore, when a forward or reverse electric field is applied, a leak current generated at the pn junction is suppressed, and a wide band gap semiconductor device suitable for a power device having a high withstand voltage function can be obtained.

  The wide band gap semiconductor device of the present invention can be applied to a pn diode, a pin diode, a Schottky diode, and a field effect transistor.

  With the wide band gap semiconductor device and the manufacturing method thereof according to the present invention, it is possible to obtain a semiconductor device with high pressure resistance and suitable for a power device while reducing the manufacturing cost.

(Embodiment 1)
FIGS. 1A to 1F are cross-sectional views showing a manufacturing process of a pn diode D which is a wide bandgap semiconductor device in the first embodiment. The pn diode D of the present embodiment is a power device having a high withstand voltage function.

  In the process shown in FIG. 1A, the resistivity is 0.02 Ωcm, the thickness is 400 μm, and the (0 0 0 1) plane that is turned off by about 8 ° in the [1 1-2 0] direction is the main surface. A type 4H-SiC substrate 10 is prepared. Then, using a CVD epitaxial growth method with in-situ doping, a drift layer 11 (underlying semiconductor layer) containing an n-type dopant having a concentration of about 1 × 10 16 cm −3 and a thickness of about 10 μm is formed on the 4H—SiC substrate 10. ) Is epitaxially grown.

  Next, after a TaC film having a thickness of about 0.5 μm is formed in the process shown in FIG. 1B, the TaC film (tantalum carbide film) is patterned by a lithography process, and a mask member M1 having an opening is formed. Form. Instead of the TaC film, a C film (carbon film) may be used.

  Next, in the step shown in FIG. 1C, by RIE (Reactive Ion Etching) (reactive ion etching) using a plasma generator, a region located in the opening of the mask member M1 in the drift layer 11 is formed. A recess Rs having a depth of about 1 μm is formed. At this time, etching damage is formed on the side wall and the bottom wall of the recess Rs. Etching damage is caused by high energy particles colliding with the surface of the underlying semiconductor layer by a plasma process, and it is estimated that damage such as charging occurs.

Next, in the step shown in FIG. 1D, a concentration of about 1 × 10 16 cm is formed on the bottom and side surfaces of the recess Rs by using a CVD epitaxial growth method with in-situ doping with the mask member M1 attached. A pad film 12 that is a first buried selective growth layer that includes an n-type dopant of −3 and has a thickness of 0.1 to 0.2 μm is epitaxially grown. At that time, for example, using _{SiH 4,} C 3 _{H 8} and _{N 2} gas added to _{H 2,} to perform selective epitaxial growth at a temperature range of 1500 ° C~1600 ° C.

  Next, in the step shown in FIG. 1E, a concentration of about 5 × 10 18 cm is formed on the bottom surface and the side surface of the recess Rs by using a CVD epitaxial growth method with in-situ doping with the mask member M 1 attached. The anode side region 13 which is a second selective growth layer containing a p-type dopant of −3 and having a thickness of about 0.5 μm is epitaxially grown. The conditions for selective epitaxial growth are almost the same as those for the growth of the pad film 12 except that the in-situ doped gas species is different.

Next, in the step shown in FIG. 1 (f), the mask member M1 is removed by wet etching using an etchant with 1: 1: 1 of HNO ₃ : HF: H ₂ O. Thereafter, the substrate surface is planarized by CMP (Chemical Mechanical Polishing) or the like as necessary. When the material of the mask member M1 is C, the mask member M1 can be removed by ashing using oxygen gas. In order to prevent epitaxial growth from being performed also from the upper end surface of the pad film 12, in the step shown in FIG. 1E, the mask member M1 is removed and a mask member covering the upper end surface of the pad film 12 is provided. It may be formed, and this may be used for selective epitaxial growth. However, it is preferable to remove the growth portion from the upper end surface of the pad film 12 by CMP.

  Further, a silicon oxide film 16 having a thickness of about 500 nm is formed on the substrate by a thermal oxidation method or a CVD method, and a portion of the silicon oxide film 16 located above the anode side region 13 is opened. The anode electrode 14 made of a Ni film having a thickness of about 0.1 μm is formed on the anode side region 13 using the above. Further, the cathode electrode 20 made of a Ni film having a thickness of about 0.1 μm is formed on the back surface of the 4H—SiC substrate 10 by vapor deposition, sputtering, or the like. Thereafter, the contact state between the anode electrode 14 and the anode-side region 13 and the contact state between the cathode electrode 20 and the 4H—SiC substrate 10 are changed from Schottky contact to ohmic contact by heat treatment in an argon atmosphere.

  In the pn diode D formed by the above process, the pad film 12 which is the first buried selective growth layer functions as a part of the first conductivity type drift region. The pn junction is a boundary region between the anode side region 13 and the pad film 12 which are the second buried selective growth layer. When a forward voltage or a reverse voltage is applied between the anode electrode 14 and the cathode electrode 20, the maximum voltage is applied to the boundary region between the anode side region 13 and the pad film 12, which is a pn junction. An electric field is generated. On the other hand, no large electric field is generated in the surface region of the drift layer 11 where etching damage exists.

  Therefore, an increase in leakage current due to recombination current or the like due to etching damage can be suppressed. That is, when the anode side region 13 is formed by the ion implantation method, it is necessary to perform multi-stage ion implantation by changing the dose amount and the acceleration energy, and the high energy of MeV order is necessary as the acceleration energy. And the cost required for the process increases. Also, damage occurs during ion implantation. On the other hand, by forming the pad film 12 and the anode side region 13 which are buried selective growth layers as in the present embodiment, the influence of etching damage is eliminated while reducing the manufacturing cost, and a high breakdown voltage is achieved. The characteristic can be exhibited.

  FIG. 5 is a diagram showing the IV characteristics of the pn diode (invention product) of the present invention and the comparative pn diode (comparison product) with respect to the forward voltage. The pn diode of the present invention is formed by the method of Embodiment 1, and the comparative pn diode directly performs selective epitaxial growth of the anode side region without providing a pad film in the recess formed by RIE etching. It has been done. As shown in the figure, the breakdown voltage in the forward direction is greatly improved in the pn diode of the present invention as compared with the comparative pn diode. In the comparative pn diode, the ideal coefficient n value deteriorates to about 2, but in the pn diode of the present invention, the ideal coefficient n value can be improved to 1.0 to 1.1.

  FIG. 6 is a diagram showing IV characteristics (leakage current) with respect to the reverse voltage of the pn diode of the present invention (invention product) and the conventional pn diode (conventional product). As shown in the figure, the breakdown voltage in the reverse direction is greatly improved in the pn diode of the present invention as compared with the comparative pn diode.

(Embodiment 2)
2 (a) to 2 (f) and FIGS. 3 (a) to 3 (e) illustrate a manufacturing process of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is a wide band gap semiconductor device according to the second embodiment. FIG. In FIGS. 2A to 2F and FIGS. 3A to 3E, only two transistor cells M of the MOSFET are displayed.

  In the step shown in FIG. 2A, the resistivity is 0.02 Ωcm, the thickness is 400 μm, and the (0 0 0 1) plane that is turned off by about 8 ° in the [1 1-2 0] direction is the main surface. A 4H-SiC substrate 30 of a mold is prepared. Then, a drift layer 31 (underlying semiconductor layer) having an n-type dopant concentration of about 5 × 10 16 cm −3 and a thickness of about 10 μm is formed on the 4H—SiC substrate 30 using a CVD epitaxial growth method with in-situ doping. ) Is epitaxially grown.

  Next, after forming a TaC film having a thickness of about 0.5 μm in the process shown in FIG. 2B, the TaC film (tantalum carbide film) is patterned by a lithography process, and a mask member M2 having an opening is formed. Form. Instead of the TaC film, a C film (carbon film) may be used.

  Next, in the step shown in FIG. 2C, by RIE (Reactive Ion Etching) (reactive ion etching) using a plasma generator, a region located in the opening of the mask member M2 in the drift layer 31 is formed. A recess Rs having a depth of about 1.1 μm to 1.2 μm is formed. At this time, etching damage is formed on the side wall and the bottom wall of the recess Rs. It is presumed that damage such as charging occurs because high energy particles collide with the surface of the underlying semiconductor layer by the plasma process.

Next, in the step shown in FIG. 2D, a concentration of about 5 × 10 15 cm is formed on the bottom and side surfaces of the recess Rs by using a CVD epitaxial growth method with in-situ doping with the mask member M 2 attached. A pad film 32 which is a first buried selective growth layer containing an n-type dopant of −3 and having a thickness of 0.1 to 0.2 μm is epitaxially grown. At that time, for example, using _{SiH 4,} C 3 _{H 8} and _{N 2} gas added to _{H 2,} to perform selective epitaxial growth at a temperature range of 1500 ° C~1600 ° C.

  Next, in the step shown in FIG. 2E, with the mask member M2 attached, a concentration of about 5 × 10 17 cm is formed on the bottom and side surfaces of the recess Rs by using a CVD epitaxial growth method with in-situ doping. A p body region 33 that is a second buried selective growth layer that includes a p-type dopant of −3 and has a thickness of about 1.0 μm is epitaxially grown. The conditions for selective epitaxial growth are almost the same as those for the growth of the pad film 32 except that the in-situ doped gas species is different.

Next, in the step shown in FIG. 2F, the mask member M2 is removed by wet etching using an etchant with a 1: 1: 1 ratio of HNO ₃ : HF: H ₂ O. Thereafter, the substrate surface is planarized by CMP (Chemical Mechanical Polishing) or the like as necessary. When the material of the mask member M2 is C, the mask member M2 can be removed by ashing using oxygen gas. Further, an n-type dopant having a concentration of 1 × 10 ¹⁹ cm ⁻³ is included in a part of the surface portion of the p body region 33 by selective ion implantation using an implantation mask (not shown), and has a thickness (depth). ) Form a source region 34 of about 0.3 μm and a p ⁺ contact region 35 containing a p-type dopant having a concentration of 5 × 10 ¹⁹ cm ⁻³ and a thickness (depth) of about 0.3 μm.

  Next, in the step shown in FIG. 3A, a gate insulating film 40 made of a silicon oxide film having a thickness of about 50 nm is formed on the substrate by thermal oxidation or CVD.

  Next, in the step shown in FIG. 3B, a drain electrode 43 made of a Ni film having a thickness of about 0.1 μm is formed on the back surface of the 4H—SiC substrate 30 by vapor deposition, sputtering, or the like.

  Next, in the step shown in FIG. 3C, after opening a portion of the gate insulating film 40 located above the source region 34, the region of the gate insulating film 40 opened using, for example, a lift-off method. A source electrode 41 made of a Ni film having a thickness of about 0.1 μm is formed thereon.

Next, in the step shown in FIG. 3D, heat treatment is performed in an argon atmosphere at 975 ° C. for 2 minutes, whereby Ni constituting the source electrode 41 and the drain electrode 43 and an underlying layer ((source region 33, p ⁺ contact region 35 and 4H-SiC substrate 30), the contact state with silicon carbide is changed from Schottky contact to ohmic contact.

  Next, in the step shown in FIG. 3E, a gate electrode 42 made of Al is formed on the gate insulating film 40 at a position separated from the source electrode 41.

  Through the above manufacturing process, an n-channel MOSFET that functions as a power device is formed. Although only two transistor cells M are shown in FIGS. 2A to 2F and FIGS. 3A to 3E, a large number of transistor cells M gather to form one vertical MOSFET. ing. The pad film 32 functions as a part of the drift layer 31, and the pn junction is formed in the boundary region between the pad film 32 and the p body region 33. When each transistor cell of the vertical MOSFET is turned on, the current supplied from the drain electrode 43 flows in the vertical direction from the 4H-SiC substrate 30 to the top of the drift layer 31, and then the top of the p body region 33. The source region 34 is reached through the channel region.

  According to the MOSFET of the present embodiment, since there is no etching damage in the interface region between the p body region 33 and the pad film 32 which are pn junctions where a large electric field is generated, the p body region is obtained by selective epitaxial growth. Even if 33 is formed, the leakage current can be reduced. That is, as in the first embodiment, the manufacturing cost can be reduced, the influence of etching damage can be eliminated, and high breakdown voltage characteristics can be exhibited.

(Embodiment 3)
FIG. 4 is a cross-sectional view of a Schottky diode which is a wide band gap semiconductor device according to the third embodiment. In the present embodiment, although the illustration of the manufacturing process is omitted, a Schottky diode is formed by the following procedure. Similar to the first and second embodiments, a drift layer 51 containing about 5 × 10 ¹⁵ cm ⁻³ of n-type dopant and having a thickness of about 10 μm is grown on the 4H—SiC substrate 30. Then, similarly to the first and second embodiments, a recess having a depth of 0.6 μm to 0.7 μm is formed in a part of the drift layer 51 using a mask member made of a TaC film or a C film, and the bottom surface of the recess And a pad film 52 (first buried selective growth layer) having an n-type dopant concentration of about 5 × 10 ¹⁵ cm ⁻³ and a thickness of 0.1 μm to 0.2 μm is selectively epitaxially grown on the side surface. . Further, a p guard ring region 53 (second buried selective growth layer) having a p-type dopant having a concentration of about 1 × 10 ¹⁷ cm ⁻³ and a thickness (depth) of about 0.5 μm is formed on the pad film 52. ). Thereafter, as in the first and second embodiments, a silicon oxide film 57 having a thickness of about 500 nm, a back electrode 60 made of a Ni film having a thickness of about 0.1 μm, and a Schottky electrode made of a Ni film having a thickness of about 0.1 μm. 58.

  Also in the Schottky diode of this embodiment, there is almost no etching damage between the p guard ring region 53 and the pad film 52 which are pn interfaces where a large electric field is generated. Therefore, by providing the pad film 52 and the guard ring region 53 which are buried selective growth layers, as in the first and second embodiments, while reducing the manufacturing cost, the influence of etching damage is eliminated, High breakdown voltage characteristics can be exhibited.

(Other embodiments)
The wide bandgap semiconductor device of the present invention is not limited to those described in the first and second embodiments, and the structure, dimensions, dopant concentration, etc. of each part can be used as long as the effects of the invention are exhibited. Any variation can be taken.

In Embodiment 1, an example in which the present invention is applied to a pn diode has been described, but the present invention can also be applied to a pin diode. In that case, in the structure shown in FIG. 1F, the pad film 12 which is the first buried selective growth layer may be made intrinsic with a dopant concentration of 1 × 10 ¹³ cm ⁻³ or less. Even in this case, as in the first embodiment, high breakdown voltage characteristics can be exhibited while reducing the manufacturing cost.

  In the second embodiment, the example in which the silicon carbide semiconductor device of the present invention is applied to a MOSFET (MOSFET) has been described. However, in the silicon carbide semiconductor device of the present invention, not only the UMOSFET but also the gate insulating film is different from the silicon oxide film. In the case of an insulating film such as a silicon nitride film, a silicon oxynitride film, and other various dielectric films, that is, it can be generally applied to MISFETs. Further, it can be applied not only to MISFETs and diodes but also to JFETs, IGBTs, thyristors, and the like.

  The silicon carbide substrate which is one of the wide band gap semiconductor substrates in the present invention is not limited to a 4H-SiC substrate, but a polytype SiC substrate different from the 4H polytype, such as a 6H-SiC substrate, or Si A substrate made of a material different from the SiC substrate, such as a substrate, may be used. For example, even in a silicon carbide semiconductor device using a 3C—SiC drift layer heteroepitaxially grown on a Si substrate, by applying the present invention, high breakdown voltage characteristics can be exhibited while reducing manufacturing costs. .

  The wide band gap semiconductor of the present invention includes not only SiC but also compound semiconductors such as GaN-based semiconductors, diamond, and the like.

  The wide band gap semiconductor device of the present invention can be used for MISFETs, pn diodes, pin diodes, Schottky diodes, JFETs, IGBTs, thyristors and the like used as power devices and high frequency devices.

(A)-(f) is sectional drawing which shows the manufacturing process of the pn diode in Embodiment 1. FIG. (A)-(f) is sectional drawing which shows the first half part of the manufacturing process of MOSFET in Embodiment 2. FIGS. (A)-(e) is sectional drawing which shows the latter half part of the manufacturing process of MOSFET in Embodiment 2. FIGS. (A)-(d) is sectional drawing of the Schottky diode in Embodiment 3. FIG. It is a figure which shows the IV characteristic with respect to the forward voltage of pn diode (invention product) of Embodiment 1, and a comparison product. It is a figure which shows the IV characteristic with respect to the reverse voltage of pn diode (invention product) of Embodiment 1, and a comparison product.

Explanation of symbols

10 4H-SiC substrate 11 Drift layer (underlying semiconductor layer)
12 Pad film (first buried selective growth layer)
13 Anode side region (second buried selective growth layer)
14 Anode electrode 16 Silicon oxide film 20 Cathode electrode 30 4H-SiC substrate 31 Drift layer (underlying semiconductor layer)
32 Pad film (first buried selective growth layer)
33 p body region (second buried selective growth layer)
34 source region 35 p + contact region 40 gate insulating film 41 source electrode 42 gate electrode 43 drain electrode 50 4H-SiC substrate 51 drift layer (underlying semiconductor layer)
52 Pad film (first buried selective growth layer)
53 p guard ring region (second buried selective growth layer)
57 Silicon oxide film 58 Schottky electrode 60 Back electrode

Claims (10)

Forming a recess in a part of the base semiconductor layer of the first conductivity type made of a wide band gap semiconductor by etching (a);
A step (b) of epitaxially growing a first conductivity type or intrinsic first buried selective growth layer in the recess;
A step (c) of, after the step (b), epitaxially growing a second buried selective growth layer of a second conductivity type on the first buried selective growth layer;
Of manufacturing a wide bandgap semiconductor device. In the manufacturing method of the wide band gap semiconductor device according to claim 1,
The said process (a) and (b) is a manufacturing method of the wide band gap semiconductor device performed using a common mask member. In the manufacturing method of the wide band gap semiconductor device according to claim 1 or 2,
The method of manufacturing a wide band gap semiconductor device, wherein the mask member is oxidized by a process of oxidizing the wide band gap semiconductor. In the manufacturing method of the wide band gap semiconductor device according to any one of claims 1 to 3,
The said process (a) is a manufacturing method of the wide band gap semiconductor device performed by reactive ion etching. A base semiconductor layer of a first conductivity type made of a wide band gap semiconductor;
A first buried selective growth layer of a first conductivity type or intrinsic having side and bottom surfaces surrounded by the underlying semiconductor layer;
A second conductive selective growth layer of a second conductivity type surrounded by side and bottom surfaces by the first buried selective growth layer;
A wide band gap semiconductor device comprising: In the wide band gap semiconductor device according to claim 5,
The base semiconductor layer and the first buried selective growth layer are drift regions of the first conductivity type,
The second buried selective growth layer is an anode side region of a second conductivity type,
A wide band gap semiconductor device that functions as a pn diode. In the wide band gap semiconductor device according to claim 5,
The base semiconductor layer is a drift region of a first conductivity type;
The first buried selective growth layer is an intrinsic i region;
The second buried selective growth layer is an anode side region of a second conductivity type,
A wide band gap semiconductor device that functions as a pin diode. In the wide band gap semiconductor device according to claim 5,
The base semiconductor layer and the first buried selective growth layer are drift regions of the first conductivity type,
The second buried selective growth layer is a second conductivity type guard ring region,
A wide band gap semiconductor device that functions as a Schottky diode. In the wide band gap semiconductor device according to claim 5,
The base semiconductor layer and the first buried selective growth layer are drift regions of the first conductivity type,
The second buried selective growth layer is a body region of a second conductivity type,
A source region of a first conductivity type having a bottom surface and a side surface surrounded by the second buried selective growth layer;
A gate insulating film straddling the source region and the body region;
A gate electrode formed on the gate insulating film;
Further comprising
A wide band gap semiconductor device that functions as a field effect transistor. In the wide band gap semiconductor device according to any one of claims 5 to 9,
The base semiconductor layer is a wide band gap semiconductor device made of silicon carbide.

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