JP2008115334A - METHOD FOR MODIFYING Si-O-Si BOND-CONTAINING COMPOUND AND METHOD FOR MAKING DEVICE - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for modifying an Si-O-Si bond-containing compound whereby a light-emitting modified part can be formed on the surface or inside of the compound and to provide a method for making a device. <P>SOLUTION: A light-emitting modified part of silicon dioxide is formed on the surface or inside of a silicone 1 as an Si-O-Si bond-containing compound by irradiating it with a laser beam of a wavelength of below 266 nm through a mask 3 or a lens 4. Thus, it is possible to establish a novel method of making a light-emitting device based on an Si-O-Si bond-containing compound. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a compound modification method and a device for forming a light-emitting modified portion, and in particular, by irradiating light having a wavelength of less than 266 nm to a compound containing a Si—O—Si bond, The present invention relates to a method for modifying a compound containing a Si—O—Si bond and a method for producing a device capable of forming a light emitting modified portion on the surface or inside of the compound containing the Si—O—Si bond.

  Light emitting devices are indispensable in the fields of optoelectronics, photonics, bio / medical or welfare engineering. Currently, light emitting devices are often formed on rigid substrates such as silicon and silica glass. This has limited the use of the device in terms of lightness, impact resistance, weather resistance, flexibility, and the like.

  Establishing a method for manufacturing a new light-emitting device based on a compound containing a Si-O-Si bond by forming a light-emitting modified portion on the surface or inside of the compound containing a Si-O-Si bond To do.

  Therefore, in view of the above points, the present invention provides a method for modifying a compound containing a Si—O—Si bond that can form a light emitting modified portion on or inside the compound containing or containing a Si—O—Si bond. And it aims at providing a device preparation method.

  Other objects and novel features of the present invention will be clarified in embodiments described later.

  In order to achieve the above object, a method for modifying a compound containing a Si—O—Si bond according to an embodiment of the present invention provides light having a wavelength of less than 266 nm on the surface or inside of a compound containing a Si—O—Si bond. It is characterized in that a light emitting modified portion is formed by irradiation.

  In the method for modifying a compound including the Si—O—Si bond, the compound including the Si—O—Si bond may be irradiated with light in a vacuum or in a non-oxidizing atmosphere. Further, the compound containing the Si—O—Si bond may be placed in a vacuum or in a non-oxidizing atmosphere before the light irradiation.

  In the method for modifying a compound including the Si—O—Si bond, a mask is disposed on the surface of the compound including the Si—O—Si bond, and light having a wavelength of less than 266 nm is irradiated through the opening of the mask. Alternatively, the light having a wavelength of less than 266 nm may be condensed and irradiated through the optical element inside or inside the compound containing the Si—O—Si bond.

  In another device manufacturing method of the present invention, a light emitting material is formed on the surface or inside of a compound containing a Si—O—Si bond by a modification method of the compound containing a Si—O—Si bond. It is characterized by.

  According to the present invention, a novel light emitting device based on a compound containing a Si—O—Si bond is formed by forming a light emitting modified portion on the surface or inside of the compound containing a Si—O—Si bond. The law can be established.

  Further, when using a mask, an optical element for condensing light, etc., the light-emitting modified portion can be formed in a position-selective and space-selective manner, and a silicone rubber or the like as a compound containing a Si—O—Si bond By selecting a flexible material, a novel flexible light-emitting device based on a compound containing a Si—O—Si bond can be produced.

  Hereinafter, as the best mode for carrying out the present invention, an embodiment of a method for modifying a compound containing a Si—O—Si bond and a method for producing a device will be described with reference to the drawings.

  FIG. 1 shows an embodiment of a method for modifying a compound containing a Si—O—Si bond and a device manufacturing method according to the present invention.

  FIG. 1A shows a schematic configuration of an experiment used in Embodiment 1 in the case where a light-emitting modified layer is formed on the surface of a compound including a Si—O—Si bond, as a compound including a Si—O—Si bond. A mask 3 is disposed on the surface of the silicone 1, and a laser beam 2 having a wavelength of less than 266 nm is irradiated on the surface of the silicone 1 through an opening of the mask 3.

  A light emitting modified layer is formed on the surface of the silicone 1 irradiated with light through the opening of the mask 3. This light emitting modified layer is made of silicon oxide but not in stoichiometric composition (not silicon dioxide). The luminescent modified layer will be described in detail in the examples below.

  When irradiating the laser beam 2 in the atmosphere or in an oxidizing atmosphere, when the laser beam wavelength is 190 nm or less, silicon dioxide having a stoichiometric composition is mainly formed as a modified layer, and the light emitting property is lost. The laser beam to be irradiated is preferably longer than 190 nm and shorter than 266 nm.

  In addition, when the laser light irradiation is performed in a vacuum or in a non-oxidizing atmosphere, silicon oxide having a non-stoichiometric composition is formed even at a shorter wavelength (that is, a wavelength of 190 nm or less) than in the air or an oxidizing atmosphere. It will be easier.

  Further, in the case where the silicone 1 is a silicone rubber or the like in which oxygen molecules enter, in order to exclude the oxygen molecules inside, the silicone 1 is put in a vacuum or in a non-oxidizing atmosphere from before the laser light irradiation. It is more preferable to arrange them.

  According to the first embodiment, the following effects can be obtained.

(1) By irradiating the silicone 1 with the laser beam 2 through the mask 3, the light emitting modified layer can be formed in a position-selective manner. That is, by using the mask 3 having a desired opening shape, the light emitting modified layer having the desired shape and size defined by the opening shape and size is provided at the desired position defined by the opening position. Can be formed on the surface of the silicone 1.

(2) By performing light irradiation on the silicone 1 as a compound containing a Si—O—Si bond in a vacuum or in a non-oxidizing atmosphere, even in light having a shorter wavelength than in the atmosphere or in an oxidizing atmosphere, Silicon oxide (light-emitting modified layer) can be formed. Furthermore, in order to exclude oxygen molecules inside the silicone 1, by placing the silicone 1 in a vacuum or in a non-oxidizing atmosphere before the light irradiation, a compound such as silicone rubber in which oxygen molecules are contained inside In contrast, the light emitting modified layer can be formed by light irradiation with a short wavelength.

(3) By adopting a material such as flexible silicone rubber as the silicone 1 for providing the light emitting modified layer, a flexible light emitting device in which a light emitting material is formed can be produced.

  FIG. 1B is a schematic configuration of an experiment used in Embodiment 2 in the case where a light emitting modified portion is formed inside a compound containing a Si—O—Si bond, and a laser beam having a wavelength of less than 266 nm inside the silicone 1. 2 is condensed and irradiated through a lens 4 as an optical element.

  In this case, the silicone 1 can be finely moved in a three-dimensional manner. As a result, the laser beam 2 is scanned in a three-dimensional manner.

  Also in the second embodiment, when the laser beam 2 is irradiated in the atmosphere or in an oxidizing atmosphere, when the wavelength of the laser beam is shortened, silicon dioxide having a stoichiometric composition is formed as a modified layer, and light is emitted. Therefore, it is desirable that the laser beam to be irradiated has a wavelength longer than 190 nm and shorter than 266 nm.

  Further, when the laser light irradiation is performed in a vacuum or in a non-oxidizing atmosphere, it is considered that silicon oxide having a non-stoichiometric composition is likely to be formed even at a wavelength shorter than that in air or in an oxidizing atmosphere. In the case of silicone rubber or the like in which oxygen molecules enter, silicone 1 is placed in a vacuum or in a non-oxidizing atmosphere before the laser light irradiation in order to exclude the oxygen molecules inside. Is more preferable.

  According to the second embodiment, by adjusting the focal position of the laser beam 2 inside the silicone 1, it is possible to form the light emitting modified portion in a position selective manner and a space selective manner (three dimensional). Other functions and effects are the same as those of the first embodiment.

  In FIG. 1B, the light emitting modified layer having a desired shape and size is formed at a desired position on the surface of the silicone 1 by aligning the focal position of the laser beam 2 with the surface of the silicone 1. You can also.

  In FIGS. 1A and 1B, the laser light having a wavelength of less than 266 nm is irradiated on the silicone 1, but the present invention is not limited to the laser light.

  Hereinafter, a modification method of a compound containing a Si—O—Si bond and a device manufacturing method according to the present invention will be described in detail in Examples.

1A, an ArF excimer laser having a wavelength of 193 nm was used as the laser beam 2. In FIG. The energy density in the laser light irradiation portion was fixed at about 30 mJ / cm ² / pulse. The pulse repetition frequency was constant at 10 Hz. The laser beam irradiation time was changed from 10 to 60 minutes. Silicone rubber was used as silicone 1, and its thickness was 0.5 mm and 2 mm. The experiment was conducted in the atmosphere. The luminescent modified layer could be formed on the surface with any silicone rubber thickness.

  FIG. 2 is a photograph of a sample in which a light emitting modified layer is formed on the silicone rubber surface by laser light irradiation for 60 minutes. When the modified sample was irradiated with a He—Cd laser beam having a wavelength of 325 nm, strong white fluorescence from the modified layer was observed. It has also been found that this fluorescence spectrum changes with post-annealing of the sample.

  The chemical composition of the luminescent modified layer was examined by X-ray photoelectron spectroscopy and infrared spectroscopy. As a result, it was found that the light emitting modified layer was silicon oxide. However, it has also been found that this silicon oxide layer is not of stoichiometric composition (not silicon dioxide). It was also found that no carbon was mixed in the modified layer.

  When the fourth harmonic (wavelength 266 nm) of an Nd: YAG laser is used instead of the ArF excimer laser, the above light emitting modified layer is not formed at all, and carbon is deposited on the silicone rubber surface instead. did.

When an F ₂ laser beam having a wavelength of 157 nm is used instead of the ArF excimer laser (energy density: about 10 mJ / cm ² / pulse constant, pulse repetition frequency: 10 Hz constant), the above light emitting modified layer is completely Instead, a silicon dioxide layer was formed on the silicone rubber surface. However, when the silicone rubber was previously held in a vacuum (10 ⁻⁴ pa) for 64 hours and subsequently irradiated with F ₂ laser light, a light emitting modified layer was formed on the silicone rubber surface.

  This is because when the silicone rubber is left in the vacuum in advance, oxygen molecules in the silicone rubber are excluded from the silicone rubber, and a luminescent modified layer is easily formed (a silicon dioxide having a stoichiometric composition is formed). It seems that it was because it was difficult to be done.

  Although the embodiments and examples of the present invention have been described above, it is obvious to those skilled in the art that the present invention is not limited thereto and various modifications and changes can be made within the scope of the claims. I will.

  According to the present invention, a compound surface or Si-O-Si bond containing Si-O-Si bond, which has been considered to be difficult by irradiating the compound surface or Si-O-Si bond containing light with a wavelength of less than 266 nm to the surface. A light emitting modified layer can be formed inside, and the light emitting modified layer can be selectively and spatially selected. As a result, the present invention can be used as a basic technology for device fabrication in the fields of optoelectronics, photonics, bio / medical or welfare engineering as well as electrical and electronic fields. It becomes an indispensable technology.

  Further, the present invention is not limited to these fields, and can be greatly used in the field of device fabrication that will be developed in the future using micro / nano machining techniques.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an embodiment of a method for modifying a compound containing a Si—O—Si bond and a device manufacturing method according to the present invention, in which FIG. It is a block diagram which shows Embodiment 2 which uses this. In the Example of this invention, it is the photograph figure by which white fluorescence was observed by irradiating the He-Cd laser beam to the silicone rubber in which the light emission property modification layer was formed. Formed by an embodiment of the present invention

Explanation of symbols

1 Silicone 2 Laser light 3 Mask 4 Lens

Claims (6)

  Modification of a compound containing Si—O—Si bond, characterized in that a light emitting modified portion is formed by irradiating light having a wavelength of less than 266 nm on the surface or inside of the compound containing Si—O—Si bond. Quality law.   The method for modifying a compound containing a Si-O-Si bond according to claim 1, wherein light irradiation to the compound containing the Si-O-Si bond is performed in a vacuum or in a non-oxidizing atmosphere.   The method for modifying a compound containing a Si-O-Si bond according to claim 2, wherein the compound containing the Si-O-Si bond is placed in a vacuum or a non-oxidizing atmosphere before the light irradiation.   4. The Si—O—Si bond according to claim 1, wherein a mask is disposed on a surface of the compound containing the Si—O—Si bond, and the light having a wavelength of less than 266 nm is irradiated through the opening of the mask. Compound modification method.   4. Modification of a compound containing a Si—O—Si bond according to claim 1, wherein the light having a wavelength of less than 266 nm is focused and irradiated through an optical element on or inside the compound surface containing the Si—O—Si bond. Law.   A light-emitting material is formed on the surface or inside of a compound containing a Si-O-Si bond by the method for modifying a compound containing a Si-O-Si bond according to claim 1, 2, 3, 4, or 5. A device fabrication method characterized by