JP2008108988A - Method and apparatus of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable an object to be stably coated with a resin without causing any stress on the object even when the amount of such resin is very small. <P>SOLUTION: When a specific electrode 3 on a semiconductor wafer 1 having a plurality of semiconductor integrated circuit elements 2 formed therein is coated with a resin 10, the resin ejected from a coating nozzle 11 located in the vicinity of the electrode 3 is heated to decrease the viscosity of the resin, the electrode 3 is previously adjusted at a temperature lower than the heating temperature of the resin, and the heated resin 10 is ejected onto the temperature-adjusted electrode 3. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method and an apparatus for manufacturing a semiconductor device, and more particularly to a technique for applying a resin to a specific electrode on a semiconductor wafer on which a plurality of semiconductor integrated circuit elements are formed.

  A plurality of semiconductor integrated circuit elements are formed on a semiconductor wafer through a diffusion process, divided into individual semiconductor devices, provided with leads for external connection, etc., sealed with resin or ceramic, etc. It becomes.

  As semiconductor manufacturing circuit elements become more miniaturized and multifunctional, burn-in (screening) tests are indispensable to ensure product quality and prevent problems after mounting. ing. The burn-in test applies temperature and electric load to a semiconductor integrated circuit element, and has been performed in the state of a product in the past. However, the form of selling a semiconductor integrated circuit element as a single device (chip) has increased, Since quality assurance in the wafer state has become important, a batch burn-in test in the wafer state has also been implemented. According to batch burn-in, in addition to finding defects in the process before assembling and shortening the inspection time in the post-process, the burn-in cost can also be reduced, so that the productivity can be improved and the inspection cost can be reduced.

  In order to realize batch wafer burn-in, it is necessary to apply power to the electrodes (AL pads) necessary for burn-in inspection formed on each of a plurality of semiconductor integrated circuit elements on the semiconductor wafer, and has a large diameter of 300 mm. In the wafer, more than 70,000 electrodes are collectively contacted.

  At that time, if power is supplied to a defective semiconductor integrated circuit element, abnormal heat will be generated, causing defects such as defective elements or burning out the probe card for wafer burn-in. It is necessary to cut off the power supply to the determined semiconductor integrated circuit element. Therefore, a method is adopted in which a number of electrodes present in one or more defective semiconductor integrated circuit elements on a semiconductor wafer are covered with an ultraviolet curable resin to be electrically insulated.

  As a resin coating method, for example, as shown in FIG. 10, an ultraviolet curable resin 10 is discharged on the electrode 3 of a required semiconductor integrated circuit element 2 on a semiconductor wafer by bringing a dispenser-type coating nozzle 11 into contact therewith. There is a coating method (see Patent Document 1).

There is also a coating method in which the coating nozzle is not brought into contact with the object. For example, the application nozzle is arranged at a predetermined height that does not contact the application site, the liquid is discharged, and when the discharge liquid comes into contact with the application site, the discharge liquid is drawn from the tip of the nozzle to the application site side. (See Patent Document 2). Application in which a resin is discharged by an inkjet method is also generally performed.
JP 2005-101439 A JP 2000-102758 A

  However, the coating method shown in FIG. 10 transfers the resin 10 by bringing the coating nozzle 11 into direct contact with the electrode 3, although various measures for reducing the contact impact on the electrode 3 have been taken. Stress is generated under the electrode 3 and under the electrode. Further, this application method utilizes the high viscosity property of the resin 10, and the discharge hole diameter of the application nozzle 11 is about 30 μm in order to prevent clogging. Application to is difficult.

  Regardless of whether the application nozzle is brought into contact with the application object or not, it is important to stabilize the application state. For this purpose, we studied changing the resin materials to control the spread according to the viscosity, but there were places where a stable spread could not be obtained depending on the surface condition of the semiconductor wafer. Varies from 5 μm to 20 μm, and an uninsulated electrode is formed.

  In view of the above problems, an object of the present invention is to enable a resin to be stably applied even in a minute amount without causing stress on an object.

  In order to solve the above problems, a method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device including a resin application step of applying a resin to a specific electrode on a semiconductor wafer on which a plurality of semiconductor integrated circuit elements are formed. In the resin coating step, the resin discharged from the coating nozzle disposed in the vicinity of the electrode is heated to reduce the viscosity, and the electrode is adjusted to a temperature lower than the heating temperature of the resin, The heated resin is discharged from a coating nozzle onto a temperature-controlled electrode.

  The semiconductor device manufacturing apparatus of the present invention is a semiconductor device manufacturing apparatus having a resin application mechanism for applying a resin to a specific electrode on a semiconductor wafer on which a plurality of semiconductor integrated circuit elements are formed. The resin coating mechanism includes a coating nozzle disposed in the vicinity of the electrode, a heating unit that heats the resin discharged from the coating nozzle, and a temperature at which the semiconductor wafer can be controlled to a temperature lower than the heating temperature of the resin. And a control means.

  The above manufacturing method and manufacturing apparatus use the temperature dependence of the viscosity of the resin to heat the resin in advance and reduce the viscosity before discharging, and after adhering to the electrode, lower the temperature to the temperature of the electrode. To increase viscosity and optimize spreading. By doing so, the resin can be stably applied in a desired spread, and since the application nozzle does not directly contact the electrode, no load is applied and stress can be avoided.

  The resin coating step may be a step of forming an insulating film on the electrode of the defective semiconductor integrated circuit element among the plurality of semiconductor integrated circuit elements on the semiconductor wafer. Since the application state is stable as described above, even a large number of electrodes can be reliably insulated.

  Conveniently, the resin is an ultraviolet curable resin. This is because a film having a desired spread and a uniform spread can be obtained by irradiating and curing the ultraviolet rays while confirming the spread of the resin.

  A small amount of resin may be discharged from the coating nozzle to the center of the electrode, and then discharged to the boundary between the electrode and the outside of the electrode. This is because when the resin discharged to the center of the electrode is difficult to spread out of the electrode, it is possible to create a flow that spreads out of the electrode by discharging to the boundary, which is effective in controlling the film thickness.

  An inspection needle connection region to which an inspection needle provided on a first probe card interposed between inspection electrodes of a plurality of semiconductor integrated circuit elements on a semiconductor wafer is connected; When the inspection bumps provided on the probe card are divided into the bump connection areas to be connected, the bump connection areas of the electrodes of the semiconductor integrated circuit element determined to be defective by the inspection by the first probe card The resin may be applied only to the resin. Since the spread of the resin (coating film) can be limited only to the bump connection region as described above, the inspection needle does not hit the coating film when it is necessary to re-inspect with the first probe card. While being able to prevent damage, peeling of the coating and the resulting dust are not generated, and adverse effects on non-defective elements can be prevented.

  As temperature control means, it is convenient to arrange a Peltier element on a wafer stage on which a semiconductor wafer is placed. This is because the Peltier element can easily control heating and cooling by the applied voltage.

  The present invention is not limited to the semiconductor device manufacturing apparatus as described above, but as a liquid coating apparatus that applies a viscous liquid to a portion to be coated of an object, that is, a coating nozzle disposed in the vicinity of the portion to be coated, and the coating nozzle It is good also as a structure which has a heating means which heats the liquid discharged from, and a temperature control means which can control the to-be-coated part of the said object to temperature lower than the heating temperature of the said liquid.

  According to the present invention, a viscous liquid such as a resin is discharged in advance from a coating nozzle disposed in the vicinity of an application site such as an electrode, and the spread is controlled by increasing the viscosity on the application site. The liquid can be stably applied to the application site with a desired spread, and the quality can be improved. Depending on the type of coating nozzle, a very small amount of coating is possible, and it can also be applied to microelectrodes in a microprocess. Further, since the coating nozzle is not brought into contact with the portion to be coated, no load is applied and no stress is generated. Compared with the coating method in which the coating nozzle is brought into contact with the portion to be coated, since the vertical mechanism and the vertical movement are not required, the coating speed can be increased and the lead time can be shortened.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The semiconductor device manufacturing apparatus according to the present invention has a resin coating mechanism for coating a specific electrode on a semiconductor wafer on which a plurality of semiconductor integrated circuit elements are formed. Will be described.

  As shown in FIG. 1, a semiconductor wafer 1 is of a certain type and has a plurality of semiconductor integrated circuit elements 2 formed thereon. As shown in FIG. 2A, each semiconductor integrated circuit element 2 is generally present, and the electrode 3 is formed on the periphery of the element so as to surround the circuit part 4. In some cases, like the semiconductor integrated circuit element 2 shown in FIG. 2B, the electrode 3 is formed not only in the periphery of the element but also in the element. Since further increase in electrode 3, narrow pitch, and narrowing are expected, it is required to apply a very small amount of resin with high positional accuracy, and particularly with high positional accuracy when the electrode 3 is formed to the inside of the element. .

  FIG. 3 shows the configuration of the resin coating mechanism provided in the semiconductor device manufacturing apparatus of one embodiment of the present invention. This resin coating mechanism will be described as being for forming an insulating film on the electrode of a defective semiconductor integrated circuit element among a plurality of semiconductor integrated circuit elements on a semiconductor wafer.

  As shown in FIG. 3A, a wafer stage 12 for installing the semiconductor wafer 1, an XY table 13 for moving the wafer stage 12 in the X direction and the Y direction, and a target of the semiconductor wafer 1 on the wafer stage 12 A coating unit 14 for coating an electrode with an electrically insulating resin, a coating unit controller 15 for controlling the coating operation of the coating unit 14, and a target electrode on the semiconductor wafer 1 and a coating position for recognizing the coating position from above. A position recognition camera 16 and a position recognition camera controller 17, a wafer stage controller 18 for controlling the operation of the XY table 13 so as to place the target electrode on the semiconductor wafer 1 at a coating position by the coating unit 14, a wafer stage 12 and coating Temperature control unit for controlling the temperature of the unit 14 The roller 19, and a integrated controller 20 for integrally controlling the the coating unit controller 15 and the position recognizing camera controller 17 and wafer stage controller 18 and the temperature control controller 19.

  The coating unit 14 is disposed outside the inkjet coating nozzle 11 in which an opening is disposed in the vicinity of the target electrode, a resin storage unit 21 that supplies resin to the coating nozzle 11, and the coating nozzle 11 and the resin storage unit 21. The heating part 22 is provided. As shown in FIG. 3B, the wafer stage 12 includes a temperature adjusting unit 23 that can cool the wafer stage 12. The coating nozzle 11 and the wafer stage 12 are provided with temperature sensors 24 and 25. The heating unit 22 and the temperature adjusting unit 23 are connected to the temperature controller 19 described above.

  The integrated controller 20 controls the temperatures of the coating nozzle 11, the resin storage unit 21, and the wafer stage 12 through the temperature control controller 19, the heating unit 22, and the temperature adjustment unit 23, and the discharge timing from the coating nozzle 11 is set. To be controlled. The temperature at which the coating nozzle 11 and the resin storage unit 22 are controlled is a predetermined temperature at which the viscosity of the internal resin is reduced to a predetermined value, and the temperature at which the wafer stage 12 is controlled is a semiconductor wafer placed thereon. 1 is a predetermined temperature that is lower than the temperature of the resin.

  With the above configuration, the target electrode on the semiconductor wafer 1 is positioned immediately below the coating nozzle 11 while being confirmed by the position recognition camera 16 in a state where the coating nozzle 11, the resin storage unit 21, and the wafer stage 12 are controlled to a predetermined temperature. Then, the resin is discharged from the coating nozzle 11 onto the target electrode by an injection signal emitted from the integrated controller 20. This step is repeated for the number of target electrodes.

  As shown in FIG. 4, the resin 10 discharged with the viscosity lowered by heating adheres to the target electrode 3 (shown by a solid line) and gradually spreads. At this time, if the temperature of the electrode 3 is low, the resin 10 becomes highly viscous immediately after adhering, and remains on the electrode 3 in an almost intact shape (right part indicated by an imaginary line), and the temperature of the electrode 3 is high. Then, the viscosity of the resin 10 becomes low and spreads to the outer periphery from the electrode 3 (left portion shown by an imaginary line). L in the figure is a scribe lane.

  This will be described in detail with reference to FIG. The wafer stage 12 on which the semiconductor wafer 1 is installed has a built-in Peltier element as the temperature adjustment unit 23 and has a temperature sensor 25 on the wafer installation surface, and the temperature adjustment unit 23 controls the temperature of the wafer stage 12. Accordingly, the temperature of the semiconductor wafer 1 including the electrode 3 thereon is uniformly controlled.

  For this reason, after the resin 10 discharged onto the electrode 3 adheres on the electrode 3 as shown by the solid line, it is cooled to the temperature of the electrode 3 (and hence the temperature of the semiconductor wafer 1), the viscosity increases, and the spread increases. While being suppressed, it spreads uniformly out of the electrode as shown by the solid line. That is, the resin 10 having a low viscosity can be quickly and stably ejected in an amount corresponding to the coating nozzle 11, and can have a desired spread on the electrode 3 to ensure an optimal coating state. Since the coating nozzle 11 does not contact the electrode 3 directly, no load is applied to the electrode 3 or under the electrode, and the coating can be performed without stress.

  Since the application nozzle 11 is an ink jet type, the discharge amount is a very small amount of several picoliters, and the amount of heat held by the discharged resin 10 is much smaller than the amount of heat held by the semiconductor wafer 1. After adhering to the semiconductor wafer 1, the semiconductor wafer 1 is quickly cooled to the temperature.

  Since the Peltier element used as the temperature adjusting unit 23 can easily control the heating and cooling by the applied voltage, both the heating and cooling functions of the Peltier element may be used. For example, when the resin 10 is discharged, all of the semiconductor integrated circuit elements 2 that require an insulating coating, that is, all of the defective semiconductor integrated circuit elements 2 are held while the temperature of the semiconductor wafer 1 is lowered to prevent the resin 10 from spreading. The ultraviolet curable resin 10 is discharged to all the target electrodes 3. After the discharge is completed, the temperature of the semiconductor wafer 1 is raised to spread the resin 10 of all the electrodes 3 at once, and when it spreads moderately, the temperature of the semiconductor wafer 1 is lowered again to stop the spread of the resin 10. If it does in this way, the resin 10 which spread moderately on all the electrodes 3 of object can be hardened by ultraviolet irradiation collectively.

  FIG. 6 is a graph showing temperature characteristics of the viscosity of the ultraviolet curable resin. Both resins A and B are generally used as electrically insulating and ultraviolet curable resins, and have a characteristic that the viscosity decreases as the temperature rises. The viscosity of the resin A is about 10 mPa · S at 80 ° C. and 700 mPa · S at about 25 ° C. (normal temperature). The viscosity of the resin B is around 10 mPa · S at 60 ° C. and 100 mPa · S around 25 ° C. Here, the viscosity of about 10 mPa · S is a viscosity that can be used in an inkjet type application nozzle.

  Therefore, for the resin A, when the temperature of the coating nozzle (and the resin storage section) is 80 ° C., the viscosity becomes around 10 mPa · S and can be easily discharged, while the wafer temperature is kept at 25 ° C. The viscosity of the resin discharged to the resin increases and can be expanded appropriately. Similarly, when the temperature of the coating nozzle (and the resin storage unit) is 60 ° C., the resin B has a viscosity of about 10 mPa · S and can be easily discharged. On the other hand, if the wafer temperature is kept at 25 ° C., the electrode The viscosity of the resin discharged on the top increases and can be expanded appropriately. In other words, by changing a resin with 100 mPa · S or more at room temperature (25 ° C) to a low viscosity of 10 mPa · S or less by heating, it becomes possible to inject it from an inkjet type application nozzle, and increase the viscosity at the injection destination. It can be expanded moderately.

  The resin 10 may be discharged not only at one place on the electrode 3 but also at a plurality of places. For example, as shown in FIG. 7, the application nozzle 11 may be moved to discharge the resin 10 to the center of the electrode 3 and the boundary between the electrode 3 and the surrounding wafer. This method may be adopted when the resin 10 discharged to the center of the electrode 3 does not spread so much and remains on the electrode 3 and the thickness becomes 10 μm or more. By adding the resin 10 (boundary portion) to the outer peripheral side of the previous resin 10 (center portion), the flow and spread of the previous resin 10 to the outer peripheral side is induced, and the outside of the electrode as shown by the phantom line It becomes possible to make it moderate spread. In order to ensure an optimum film thickness and spread, the liquid may be discharged from the center portion once to a plurality of times and to the boundary portion from one time to a plurality of times.

  As shown in FIG. 8, by using a multi-nozzle having a plurality of coating nozzles 11a and 11b, the resin 10 is discharged to the central portion and the boundary portion of the electrode 3 all at once, so that the outside of the electrode as indicated by the phantom line is reached. You may make it ensure the breadth of. By doing so, the thickness of the resin 10 on the electrode 3 can be suppressed to 10 μm or less. The number of nozzles may be determined based on the size of the electrode 3 and the amount of resin discharged. For example, when 1 picoliter of resin is ejected, it adheres to the electrode 3 with a diameter of about 5 μm. Therefore, if the electrode 3 is 50 μm wide, 10 nozzles are arranged in a simple calculation. For example, the spread of the resin 10 after adhering is calculated as doubled, and five nozzles are arranged. As described above, the plurality of application nozzles 11a, 11b,... Are arranged in consideration of the size of the electrode 3 and the discharge amount and spread of the resin 10, thereby discharging the resin 10 to a plurality of locations on the electrode 3 at once. It is possible to obtain an optimal spread.

  As shown in FIGS. 9A and 9B, an inspection needle connection for connecting an inspection needle 26 (probe needle) provided on a probe card that interposes the electrode 3 of the semiconductor integrated circuit element 2 with the inspection device. It is also possible to divide the region 3a into the bump connection region 3b to which the bump electrode 27 provided on the wafer burn-in probe card is connected, and perform each inspection in each region. Reference numeral 28 in the drawing indicates a trace of the inspection needle 26.

  The above-mentioned insulating film is defective in the inspection in which the inspection needle 26 is connected prior to the batch wafer burn-in with the probe card having the bump electrodes 27 corresponding to the total number of the plurality of semiconductor integrated circuit elements 2 on the semiconductor wafer 1. Since the electrode 3 of the semiconductor integrated circuit element 2 determined to be insulated is formed so as to be insulated, it is sufficient to form a film only on the bump connection region 3b for the electrode 3 thus divided.

  Therefore, when the semiconductor device manufacturing apparatus according to the present invention appropriately controls the temperature of the semiconductor wafer 1 and the resin 10 is discharged only into the bump connection region 3b in the form of minute protrusions at equal intervals as shown in the figure. Each protruding resin 10 does not spread but stays in the bump connection region 3b, and the discontinuous insulating film formed thereby insulates the electrode 3 (bump connection region 3b) from the bump electrode 27. If the resin discharge amount is such that the film thickness of the insulating coating does not become 10 μm or more, there will be no hindrance to the connection of other bump electrodes 27 that are simultaneously connected to non-defective elements. When reinspecting with the inspection needle 26, it can be directly connected to the electrode 3 (inspection needle connection region 3a).

  On the other hand, depending on the conventional method in which the resin is simply discharged, the resin spreads over the entire electrode 3 and a film is formed. Therefore, when re-inspecting with the inspection needle 26, the inspection needle 26 penetrates the film. The inspection needle 26 itself may be damaged, the coating may be peeled off, and dust may be generated, thereby adversely affecting the non-defective semiconductor integrated circuit element 2.

  Although the above embodiment has been described as using an ink jet type application nozzle, the present invention is not limited to this. The application to the microelectrode is preferable because the above-mentioned ink jet type application nozzle can discharge even at 1 picoliter or less, but if it is a dispenser type application nozzle, the minimum discharge amount is about 30 picoliters, but the viscosity is low. High resin can be discharged, and it can be efficiently applied to a large electrode area of about 50 μm × 50 μm.

  The dispenser method is a method of discharging an appropriate amount of liquid by controlling the air pressure and the discharge time (several milliseconds to several seconds). Since high-viscosity liquid materials can also be discharged, it is generally used as a discharge method for resin, viscous liquid, etc. in the manufacture of semiconductor devices. When UV curable resin (viscosity 100 mPa · S) as used here is discharged from the needle hole diameter of 20 to 30 μm at the tip of the nozzle, it is stable from the needle hole diameter, resin viscosity (normal temperature use), etc. The discharge amount is 30 picoliters or more as described above.

  In the above embodiments, it has been described that an electrically insulating resin is applied to form an insulating film on the electrodes of defective semiconductor integrated circuit elements among a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer. However, it is also possible to form conductive bumps on the electrodes using a conductive resin. Furthermore, a viscous liquid that is not a resin can be applied in the same manner.

  According to the coating method of the present invention, a viscous liquid can be stably applied even in a minute amount, and therefore, a resin is placed at a specific position with respect to the microelectrode of the semiconductor integrated circuit element of the semiconductor wafer that is being miniaturized. It is particularly useful for applications where it is applied.

Plan view of a conventional semiconductor wafer to be processed 1 is a plan view of a plurality of semiconductor integrated circuit elements formed on the semiconductor wafer of FIG. Configuration diagram of resin coating mechanism of semiconductor device manufacturing apparatus according to the present invention Explanatory drawing which shows the spread of the resin discharged on the electrode of a semiconductor wafer Another explanatory view showing the spread of the resin discharged on the electrode of the semiconductor wafer Graph showing temperature characteristics of viscosity of UV curable resin Explanatory drawing which shows the state which discharges resin with the single application nozzle to several places on the electrode of a semiconductor wafer Explanatory drawing which shows the state which discharges resin with multiple application nozzles to multiple places on the electrode of a semiconductor wafer Explanatory drawing which shows the state which discharged resin to the partial area | region on an electrode Explanatory drawing showing the application method with a conventional application nozzle

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Semiconductor integrated circuit element 3 Electrode
3a Inspection needle connection area
3b Bump connection area
10 Resin
11 Application nozzle
13 Wafer stage
21 Resin storage
22 Heating section
23 Temperature controller
24,25 temperature sensor
26 Inspection needle
27 Bump electrode

Claims (8)

A method of manufacturing a semiconductor device including a resin application step of applying a resin to a specific electrode on a semiconductor wafer on which a plurality of semiconductor integrated circuit elements are formed,
In the resin application step, the resin discharged from an application nozzle arranged in the vicinity of the electrode is heated to lower the viscosity, and the electrode is adjusted to a temperature lower than the heating temperature of the resin, and the temperature is adjusted. A method of manufacturing a semiconductor device, wherein the heated resin is discharged from a coating nozzle onto an electrode.   2. The method of manufacturing a semiconductor device according to claim 1, wherein the resin coating step is a step of forming an insulating film on an electrode of a defective semiconductor integrated circuit element among a plurality of semiconductor integrated circuit elements on the semiconductor wafer. .   2. The method of manufacturing a semiconductor device according to claim 1, wherein the resin is an ultraviolet curable resin.   2. The method of manufacturing a semiconductor device according to claim 1, wherein a small amount of resin is discharged from a coating nozzle to the center of the electrode and then discharged to a boundary between the electrode and the outside of the electrode.   An inspection needle connection region to which an inspection needle provided on a first probe card interposed between inspection electrodes of a plurality of semiconductor integrated circuit elements on a semiconductor wafer is connected; When the inspection bumps provided on the probe card are divided into the bump connection areas to be connected, the bump connection areas of the electrodes of the semiconductor integrated circuit element determined to be defective by the inspection by the first probe card 3. The method of manufacturing a semiconductor device according to claim 2, wherein the resin is applied only to the semiconductor device. A semiconductor device manufacturing apparatus having a resin application mechanism for applying a resin to a specific electrode on a semiconductor wafer on which a plurality of semiconductor integrated circuit elements are formed,
The resin coating mechanism can control a coating nozzle disposed in the vicinity of the electrode, a heating unit for heating the resin discharged from the coating nozzle, and a temperature lower than the heating temperature of the resin. An apparatus for manufacturing a semiconductor device, comprising: a temperature control unit.   7. The semiconductor device manufacturing apparatus according to claim 6, wherein the temperature control means is a Peltier element arranged on a wafer stage on which a semiconductor wafer is placed. A liquid application device for applying a viscous liquid to an application location of an object,
An application nozzle disposed in the vicinity of the application location, a heating means for heating the liquid discharged from the application nozzle, and the application location of the object can be controlled to a temperature lower than the heating temperature of the liquid. And a temperature control means.

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