JP2008098621A - Laser beam irradiation apparatus and laser beam irradiation method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser beam irradiation apparatus and a laser-beam irradiation method which can reduce the laser beam irradiation positional errors to the object to be irradiated during irradiation of a laser beam to the object to be irradiated via a beam expander optical system, and which can irradiate the laser beam of arbitrary size, without the need for remaking the beam expander optical system. <P>SOLUTION: The laser beam irradiation apparatus includes a laser oscillator, a beam expander optical system having zoom function, and a correction lens arranged at a position for conjugating the laser oscillator and the beam expander optical system. The beam expander optical system has at least three lenses and if they are sequentially designated as a first lens, a second lens, and a third lens in the advancing direction of the laser beam, the second lens and the third lens will work with one another, in matching with the magnification of the laser beam. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a laser beam irradiation apparatus and a laser beam irradiation method, and more particularly to a laser beam irradiation apparatus and a laser beam irradiation method using a beam expander optical system.

  In recent years, a technique for manufacturing a thin film transistor (hereinafter referred to as TFT) on a substrate has greatly advanced, and application development to an active matrix display device has been advanced. In particular, a TFT using a polycrystalline semiconductor film has higher field effect mobility (also referred to as mobility) than a conventional TFT using an amorphous semiconductor film, and thus can operate at high speed. For this reason, it is used that the control of the pixel portion, which has been conventionally performed by a driving circuit provided outside the substrate, is performed by a driving circuit formed on the same substrate as the pixel portion.

  By the way, as a substrate used for a semiconductor device, a glass substrate is considered to be more promising than a quartz substrate or a single crystal semiconductor substrate in terms of cost. Since glass substrates are inferior in heat resistance and easily deformed by heat, when crystallizing a semiconductor film to form a TFT using a polycrystalline semiconductor film on the glass substrate, in order to avoid thermal deformation of the glass substrate A method of crystallization by irradiating a semiconductor film with laser light is often used.

  The characteristics of crystallization of a semiconductor film by laser light are that the processing time can be significantly shortened compared to an annealing method using radiation heating or conduction heating, and the semiconductor substrate or the semiconductor film on the substrate is selectively used. And locally heating to cause little thermal damage to the substrate.

  In general, laser light (also referred to as a laser beam) oscillated by a laser oscillator has a Gaussian spatial intensity distribution. For this reason, when the irradiated object is directly irradiated with the laser beam oscillated from the laser oscillator, the energy distribution is different in the irradiation region. For example, when laser light is irradiated onto a semiconductor film such as silicon to improve crystallization or film quality, if the semiconductor film is directly irradiated with laser light having a Gaussian spatial intensity distribution, the center and edges of the irradiated region Since the energy distribution is different in the part, the melting time of the semiconductor film is different. As a result, the crystallinity of the semiconductor film becomes non-uniform, and a semiconductor film having desired characteristics cannot be obtained.

  Therefore, generally, by using some laser beam shaping means, the spatial intensity distribution of the laser beam oscillated from the laser oscillator is made uniform, and then the irradiated object is irradiated with the laser beam. For example, a beam expander optical system is widely used as a laser beam shaping means (see, for example, Patent Document 1).

The conventional beam expander optical system, two lenses 1102a as shown in FIG. 5 consists 1102b, the focal length _{f 1} of the lens 1102a, and a focal length of the lens 1102b was _{f 2,} the lens from the lens 1102a 1102b Until the optical distance is f ₁ + f ₂ . As a result, the laser beam 1105 emitted from the laser oscillator 1101 passes through the beam expander optical system 1102 and is magnified f ₂ / f ₁ times and projected onto the irradiated surface. For example, by arranging the diffractive optical element 1104 behind the beam expander optical system 1102, laser light having a desired shape can be obtained.

In general, since a diffractive optical element is an element having a fine and complicated structure, it is necessary to make a laser beam incident from an extremely accurate position. Since it is very difficult to reduce the diameter of the diffractive optical element at present, the method of expanding the laser beam by the beam expander optical system or the like and propagating it to the diffractive optical element as described above is used.
Japanese Unexamined Patent Publication No. 7-41845

  The laser light incident on the conventional beam expander optical system is emitted with the beam diameter changed according to the magnification X of the beam expander optical system. At this time, if the laser light is accurately incident on the center of the lens 1102a located at the entrance of the beam expander optical system, the enlarged laser light is emitted from the center of the lens 1102b located at the exit point of the beam expander optical system. The laser light is accurately incident on the diffractive optical element 1104 (see FIG. 5).

  However, laser light is unstable light in which the optical path of the laser light changes every moment depending on the state of the laser oscillator itself or the usage environment such as temperature change. Therefore, when laser light is incident on the beam expander optical system, the laser light is not accurately incident on the center of the first lens, and an error may occur in the incident position on the diffractive optical element.

  For example, when the magnification of the beam expander optical system is X, when the incident position on the first lens is shifted by a distance d from the center of the lens, the emission position of the laser light emitted from the second lens is The position is shifted by a distance Xd from the center of the lens. In other words, the error in the incident position of the laser beam to the beam expander optical system is enlarged by the same amount as the magnification of the laser beam, resulting in an error in the emission position. Therefore, the incident position on the diffractive optical element is also shifted by the distance Xd, and when a diffractive optical element that requires a precise irradiation position is used, there is a problem that laser light with desired performance cannot be obtained.

Further, the beam diameter at the exit of the laser oscillator differs depending on the individual difference of the laser oscillator. For example, when the laser oscillator is defective, the laser oscillator may be replaced. At this time, if the beam diameter of the laser beam emitted from the laser oscillator changes, the beam diameter at the incident position on the beam expander optical system also changes, so the size of the laser beam on the irradiated surface after passing through the beam expander optical system. It will also change. Therefore, in order to obtain laser light having the same size as that before the laser oscillator replacement on the irradiated surface, the magnification of the beam expander optical system must be changed. That is, each time the laser oscillator is replaced, the beam expander optical system must be redesigned, which is inefficient. In general, since the magnification of the beam expander optical system is fixed, the size of the laser light on the irradiated surface after passing through the beam expander optical system is fixed to one according to the magnification of the beam expander optical system. It was. Therefore, in order to change the size of the laser beam on the irradiated surface after passing through the beam expander optical system, the beam expander optical system has to be remade.

  In view of the above problems, the present invention reduces the error in the irradiation position of the laser beam on the irradiated object when irradiating the irradiated object with the laser beam via the beam expander optical system, and the beam expander optical system. It is an object of the present invention to provide a laser light irradiation apparatus and a laser light irradiation method that can irradiate laser light of an arbitrary size without modifying the laser beam.

  The laser beam irradiation apparatus of the present invention includes a laser oscillator, a beam expander optical system having a zoom function, and a correction lens disposed at a position where the laser oscillator and the beam expander optical system are conjugated, and the beam expander. The optical system has at least three lenses. When the first lens, the second lens, and the third lens are sequentially arranged in the laser beam traveling direction, the second lens and the third lens It is characterized by interlocking according to the magnification.

  Another configuration of the laser light irradiation apparatus of the present invention includes a laser oscillator, a beam expander optical system having a zoom function, and a correction lens disposed between the laser oscillator and the beam expander optical system, The expander optical system has a first lens, a second lens, and a third lens in order in the traveling direction of the laser light oscillated from the laser oscillator. The first lens is a concave lens, and the second lens is , Moving in the direction to change the distance from the first lens to enlarge or reduce the beam diameter of the laser light, the third lens works in conjunction with the second lens to make the laser light parallel light, The emission point of the oscillator is the first conjugate point, the point at which the image of the first conjugate point is imaged through the correction lens is the second conjugate point, the distance from the correction lens to the second conjugate point is B, Focus of the first lens A release f, and the distance between the correction lens and the first lens is X, X is, B-3 | f | ≦ X ≦ B + | f |, is characterized by satisfying. The concave lens used in this specification may be an optical element having a function equivalent to that of a concave lens.

In the laser beam irradiation apparatus of the present invention, X preferably satisfies X = B− | f | in the above configuration.

  In the above-described configuration, the laser beam irradiation apparatus of the present invention is preferably characterized in that the distance between the laser oscillator and the first lens is 0.5 m or more, more preferably 1 m or more.

  Another configuration of the laser beam irradiation apparatus includes a laser oscillator, a beam expander optical system having a zoom function, and a correction lens disposed between the laser oscillator and the beam expander optical system. The expander optical system has a first lens, a second lens, and a third lens in order in the traveling direction of the laser light oscillated from the laser oscillator. The first lens is a convex lens, and the second lens is , Moving in the direction to change the distance from the first lens to enlarge or reduce the beam diameter of the laser light, the third lens works in conjunction with the second lens to make the laser light parallel light, The emission point of the oscillator is the first conjugate point, the point at which the image of the first conjugate point is imaged through the correction lens is the second conjugate point, the distance from the correction lens to the second conjugate point is B, Focus of the first lens A release f, and the distance between the correction lens and the first lens is X, X is is characterized by satisfying B-f ≦ X ≦ B + 3f, a. The convex lens used in this specification may be an optical element having a function equivalent to that of a convex lens.

In the laser beam irradiation apparatus of the present invention, X preferably satisfies X = Bf in the above configuration.

  In the above-described configuration, the laser beam irradiation apparatus of the present invention is preferably characterized in that the distance between the laser oscillator and the first lens is 0.5 m or more, more preferably 1 m or more.

The laser light irradiation apparatus of the present invention is characterized in that, in the above configuration, the third lens is a convex lens.

The laser beam irradiation apparatus of the present invention is characterized in that, in the above configuration, the correction lens is a convex lens.

  Further, the laser light irradiation apparatus of the present invention is characterized in that, in the above configuration, a diffractive optical element that makes the laser light incident through the beam expander optical system incident is disposed.

  In the above configuration, when the focal length of the correction lens is f ′ and the distance from the first conjugate point to the correction lens is A, A, B, and f ′ are 1 / A + 1 / B≈1 / f ′. It is a relationship that satisfies.

  According to the laser beam irradiation method of the present invention, the laser beam is emitted from the laser oscillator, the laser beam is incident on the correction lens, and the laser beam emitted from the correction lens is converted into the first beam expander optical system having a zoom function. When sequentially entering the lens, the second lens, and the third lens, the first lens is a concave lens, and the second lens moves in a direction that changes the distance from the first lens, so that the laser light The beam diameter is enlarged or reduced, and the third lens is linked with the second lens so that the laser beam becomes parallel light, the emission point of the laser oscillator is the first conjugate point, and the image of the first conjugate point is The point imaged through the correction lens is the second conjugate point, the distance from the correction lens to the second conjugate point is B, the focal length of the first lens is f, and the correction lens and the first lens are When the distance is X, X is B-3 | f | ≦ X ≦ + | F |, the laser oscillator so as to satisfy the, by disposing the correction lens and the first lens is characterized by irradiating a laser beam.

  In the laser beam irradiation method of the present invention, in the above configuration, preferably, the laser oscillator, the correction lens, and the concave lens are arranged so that X satisfies X = B− | f | It is characterized by that.

  In the laser beam irradiation method of the present invention, the distance between the laser oscillator and the concave lens or the distance between the laser oscillator and the first lens is preferably 0.5 m or more, more preferably 1 m or more. It is characterized by irradiating with laser light.

  In another laser light irradiation method of the present invention, a laser beam is emitted from a laser oscillator, the laser beam is incident on a correction lens, and the laser beam emitted from the correction lens is converted into a beam expander optical system having a zoom function. When the light enters the first lens, the second lens, and the third lens in this order, the first lens is a convex lens, and the second lens is moved in a direction that changes the distance from the first lens. The beam diameter of the laser beam is enlarged or reduced, the third lens is linked with the second lens, the laser beam is made into parallel light, the emission point of the laser oscillator is the first conjugate point, and the first conjugate The point at which the image of the point is formed through the correction lens is the second conjugate point, the distance from the correction lens to the second conjugate point is B, the focal length of the first lens is f, and the correction lens and the first If the distance from the lens is X, X is B−f ≦ ≦ B + 3f, the laser oscillator so as to satisfy the, by disposing the correction lens and the first lens is characterized by irradiating a laser beam.

  Further, the laser light irradiation method of the present invention is characterized in that, in the above structure, the laser light is irradiated by arranging a laser oscillator, a correction lens and a convex lens so that X satisfies X = B + f. Yes.

  In the laser beam irradiation method of the present invention, the laser beam is preferably irradiated with the distance between the laser oscillator and the first lens being 0.5 m or more, more preferably 1 m or more. It is a feature.

  The laser light irradiation method of the present invention is characterized in that, in the above structure, a convex lens is used as the third lens.

  The laser beam irradiation method of the present invention is characterized in that, in the above configuration, a convex lens is used as the correction lens.

  In the laser beam irradiation method of the present invention, the laser beam having passed through the beam expander optical system is incident on the diffractive optical element in the above configuration.

  The optical path is corrected between the laser oscillator and the beam expander optical system when the scale of the laser light oscillated from the laser oscillator is enlarged by the beam expander optical system having a zoom function and then incident on the irradiated object. A correction lens is provided. As a result, the shift of the incident position of the laser beam to the beam expander optical system can be reduced, and the laser beam can be propagated from an accurate position to the next irradiation surface of the beam expander optical system. In addition, the zoom function provided in the beam expander optical system can correct the difference in the beam diameter due to the individual difference of the laser oscillator.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals may be used in common in different drawings.

  (Embodiment 1)

  In this embodiment mode, an example of a laser beam irradiation apparatus and a laser beam irradiation method of the present invention will be described with reference to the drawings.

  First, FIG. 1 illustrates a configuration example of the laser beam irradiation apparatus described in this embodiment. The laser irradiation apparatus shown in FIG. 1 has at least a laser oscillator 101, a correction lens 102 for correcting an optical path, and a beam expander optical system 103 having a zoom function. The laser beam 105 oscillated from the laser oscillator 101 is propagated to the beam expander optical system 103 via the correction lens 102, and after the scale of the laser beam 105 is increased through the beam expander optical system 103, the irradiated object 104. Is irradiated (see FIG. 1).

  Further, the beam expander optical system according to the present embodiment has at least three lenses. In the beam expander optical system 103 of FIG. 1, a first lens 103a, a second lens 103b, and a third lens 103c are sequentially arranged in the traveling direction of the laser beam 105 oscillated from the laser oscillator 101. . Although FIG. 1 shows an example in which a biconcave lens is used as the first lens 103a, a plano-convex lens is used as the second lens 103b, and a plano-convex lens is used as the third lens 103c, the lens used is not limited to this. . The first lens 103a can be of any type as long as it is a concave lens. For example, a concave lens such as a plano-concave lens or a concave meniscus lens or an optical element having a function equivalent to that of a concave lens may be used as the first lens 103a. The third lens 103c can be of any type as long as it is a convex lens. For example, a convex lens such as a biconvex lens or a convex meniscus lens or an optical element having a function equivalent to that of a convex lens is used as the third lens 103c. Also good. Further, the second lens 103b can be of any type as long as it is a spherical lens. For example, a biconvex lens, a convex meniscus lens, a biconcave lens, a planoconcave lens, or a concave meniscus lens may be used as the second lens 103b. Moreover, you may use a 2 or more group lens for each lens.

As the laser oscillator 101, a continuous wave laser oscillator (CW laser oscillator) such as a YVO ₄ laser, a pseudo CW laser oscillator, or the like can be used. For example, gas lasers include Ar laser, Kr laser, CO ₂ laser, etc., and solid lasers include YAG laser, YLF laser, YAlO ₃ laser, GdVO ₄ laser, alexandrite laser, Ti: sapphire laser, Y ₂ O. _Three lasers or the like can be applied. The YAG laser, Y ₂ O ₃ laser, GdVO ₄ laser, and YVO ₄ laser may be a ceramic laser. An example of the metal vapor laser is a helium cadmium laser. A Disk laser may also be used. A feature of the Disk laser is that the laser medium has a disk shape so that the cooling efficiency is good, that is, the energy efficiency and the beam quality are good.

In the laser oscillator described above, it is preferable that the emitted laser light be oscillated by TEM ₀₀ because the energy uniformity of the linear beam spot obtained on the irradiated surface can be increased.

  When the laser light is incident on the beam expander optical system 103, if the incident position is shifted, the irradiation position of the laser light that has passed through the beam expander optical system 103 is greatly affected. However, even if the incident angle of the laser beam to the beam expander optical system 103 is slightly shifted, the irradiation position of the laser beam that has passed through the beam expander optical system 103 is not affected. Therefore, even if the incident angle of the laser light incident on the beam expander optical system 103 changes, if the incident light is incident on the optimum position of the beam expander optical system 103, the laser beam enters the following from a certain position and angle. Propagated to the irradiated surface. That is, the incident position is more important than the incident angle of the laser beam to the beam expander optical system 103.

  Therefore, in order to keep the incident position constant, the correction lens 102 is arranged at a position where the laser oscillator 101 and the first lens 103 a located at the entrance of the beam expander optical system 103 are conjugate. As described above, the laser light oscillated from the laser oscillator 101 is propagated to the beam expander optical system 103 via the correction lens 102, so that the laser light with an unstable optical path is brought to an accurate position of the beam expander optical system 103. In addition, the laser beam can be propagated to an accurate position on the surface of the irradiation object 104. The correction lens 102 is provided to control the incident position of the laser light incident on the first lens 103 a constituting the beam expander optical system 103.

  The laser light that has passed through the beam expander optical system 103 is propagated to the irradiated object 104. As the irradiated object 104, for example, a diffractive optical element can be used. A diffractive optical element is also referred to as a diffractive optics or a diffractive optics element, and is an element that obtains a spectrum by utilizing light diffraction. Further, since the diffractive optical element is an element having a fine and complicated structure, it is necessary to make the laser beam incident from an extremely accurate position. In general, it is very difficult to reduce the diameter of a diffractive optical element at present, and a method in which a laser beam is expanded by a beam expander optical system and then propagated to the diffractive optical element is applied as a method of using the diffractive optical element. ing. Therefore, when the beam expander optical system and the diffractive optical element are provided in combination, as described above, the correction lens 102 is provided at a position where the laser oscillator 101 and the beam expander optical system 103 are conjugated, and enters the diffractive optical element. It is very effective to reduce the deviation of the incident position of the laser beam.

  As the correction lens 102, a convex lens that condenses incident light can be used. Although FIG. 1 shows an example in which a plano-convex lens is used as the correction lens 102, a biconvex lens, a convex meniscus lens, or the like can also be used. Further, a cylindrical lens may be used. The cylindrical lens has a curvature in one direction, and can collect or diffuse only in a one-dimensional direction. Therefore, optical adjustment can be freely performed by providing a combination of a plurality of cylindrical lenses and combining the directions of curvature of the respective cylindrical lenses.

In addition, the laser beam irradiation apparatus described in this embodiment is configured so that the laser beam emitted from the laser oscillator 101 enters the first lens 103a of the beam expander optical system via the correction lens 102. The exit point (or beam waist, light source) is the first conjugate point O _1, and the point at which the image of the first conjugate point O ₁ is formed via the correction lens 102 is the second conjugate point O _2. and then, the distance from the first conjugate point _{O 1} to the correction lens 102 a, the distance from the correction lens 102 to the second conjugate point _{O 2} B, when the focal length of the first lens 103a and the _{f 2} In addition, the first lens 103a is arranged so that X satisfies B-3 | f ₂ | ≦ X ≦ B + | f ₂ | where X is the distance between the correction lens 102 and the first lens 103a. To do.

Arrangement that meets the formula above, the focus of the first lens 103a (here, the focal point of the first lens 103a located on the traveling direction side of the laser beam) When set to F _2, the second conjugate point O ₂ satisfies the relationship of being located in the range of 2f ₂ with respect to the traveling direction of the laser beam from the focal point F ₂ of the first lens 103a and the opposite direction. By arranging the laser oscillator 101, the correction lens 102, the first lens 103a, and the like so that X satisfies such a relationship, an incidence error of the laser light to the beam expander optical system can be reduced, and irradiation can be performed. It is possible to reduce the error in the irradiation position of the laser beam on the object 104.

Note that the first lens 103a is preferably provided at a position where the distance X at which the first lens 103a is disposed is X = B−f ₂ (see FIG. 2). That is, the second conjugate point O ₂ is formed at a position that becomes the focal point F ₂ of the first lens 103 a (here, the focal point of the first lens 103 a located on the traveling direction side of the laser light). 1 lens 103a is provided. In this case, when irradiating the irradiation object with the laser beam via the beam expander, the error in the irradiation position of the laser beam on the irradiation object can be reduced most.

When the focal length of the correction lens 102 is f ₁ , the distance from the first conjugate point O ₁ to the correction lens 102 is A, and the distance from the correction lens 102 to the second conjugate point O ₂ is B, the correction is performed. The focal length f ₁ of the lens 102 has a relationship satisfying 1 / A + 1 / B≈1 / f ₁ .

  In the laser beam irradiation apparatus described in this embodiment, the second lens 103b of the beam expander optical system 103 is provided in order to reduce or expand the spread angle of the laser beam that has passed through the first lens 103a. . The third lens 103c is provided to make the laser light emitted from the second lens 103b parallel light.

  Note that in the laser light irradiation apparatus described in this embodiment, the beam expander optical system 103 has a zoom function. Specifically, the second lens 103b is moved by the mechanism that changes the distance between the first lens 103a and the second lens 103b of the beam expander optical system 103 in FIG. By changing the interval C, the focal length of the lens system by the two lenses changes, and the magnification of the beam diameter of the laser beam 105 is enlarged or reduced. Further, the third lens 103c is interlocked with the second lens 103b in order to make the laser light emitted from the second lens 103b parallel light. By irradiating laser light through such a beam expander optical system having a zoom function, the magnification of the laser light irradiated on the irradiated surface can be easily changed. Any known lens moving means can be used as the mechanism for changing the distance between the first lens 103a and the second lens 103b.

  In general, since the size of the laser beam diameter varies depending on the laser oscillator to be emitted, it is necessary to prepare a beam expander optical system for each laser oscillator in order to provide the same size of laser light. It was. However, since the laser beam irradiation apparatus shown in this embodiment has the zoom function as described above in the beam expander optical system, it can provide laser beams of an arbitrary size regardless of individual differences of laser oscillators. Is possible.

  Note that the second lens 103b and the third lens 103c are preferably arranged so that the distance D between the second lens 103b and the third lens 103c is within 1 m.

  In addition, the laser beam irradiation apparatus or the laser beam irradiation method described in this embodiment is more effective as the distance between the laser oscillator 101 and the beam expander optical system 103 becomes larger. In general, when an optical system is arranged, it is necessary to provide the optical system with a certain interval in relation to the apparatus. Therefore, the laser beam irradiation apparatus shown in the present embodiment is more preferable when the distance between the laser oscillator 101 and the first lens 103a constituting the beam expander optical system 103 is preferably separated by 0.5 m or more. Is particularly effective when provided at a distance of 1 m or more.

  The present embodiment can be applied to all laser light irradiation apparatuses and laser light irradiation methods using a beam expander optical system.

  In the laser beam irradiation apparatus described in this embodiment, a correction lens is provided between a laser oscillator and a beam expander optical system having a zoom function, so that the positional deviation of the laser beam on the irradiated surface can be reduced. It is possible to accurately control the irradiation position. Furthermore, by providing the beam expander optical system with a zoom function, for example, even when the laser oscillator is replaced, it is possible to provide laser light of a desired size without changing the beam expander optical system. Also, when it is desired to change the size of the laser beam on the irradiated surface, it is possible to easily provide a laser beam of an arbitrary size without replacing the beam expander optical system.

(Embodiment 2)
In this embodiment mode, a laser beam irradiation apparatus and a laser beam irradiation method which are different from those in the above embodiment mode are described with reference to drawings. Specifically, the case where a beam expander optical system having a convex lens is used as the first lens will be described.

  First, FIG. 3 illustrates an example of a structure of the laser light irradiation apparatus described in this embodiment. The laser beam irradiation apparatus shown in FIG. 3 includes at least a laser oscillator 101, a correction lens 102 that corrects an optical path, and a beam expander optical system 203 having a zoom function. The laser beam 105 oscillated from the laser oscillator 101 is propagated to the beam expander optical system 203 through the correction lens 102, and after the scale of the laser beam 105 is increased through the beam expander optical system 203, the irradiated object 104. Is irradiated (see FIG. 3).

  As the beam expander optical system 203, a first lens 203a, a second lens 203b, and a third lens 203c can be used in combination. In FIG. 3, a first lens 203a, a second lens 203b, and a third lens 203c are sequentially arranged in the traveling direction of the laser beam 105 oscillated from the laser oscillator 101. Although FIG. 3 shows an example in which biconvex lenses are used as the first lens 203a, the second lens 203b, and the third lens 203c, the lens used is not limited to this. As long as the first lens 203a and the third lens 203c are convex lenses, any type can be used. For example, the first lens 203a or the third lens 203c is equivalent to a convex lens such as a plano-convex lens or a convex meniscus lens, or a convex lens. An optical element having the above function may be used. The second lens 203b can be of any type as long as it is a spherical lens. For example, a biconvex lens, a convex meniscus lens, a biconcave lens, a planoconcave lens, or a concave meniscus lens may be used as the second lens 203b. Moreover, you may use a 2 or more group lens for each lens.

  3 shows an example in which a plano-convex lens is used as the correction lens 102, a biconvex lens, a convex meniscus lens, or the like can also be used. Further, a cylindrical lens may be used.

  Even when the incident angle of the laser beam incident on the beam expander optical system 203 is changed, the laser beam is enlarged when the laser beam is incident on the optimum position of the beam expander optical system 203, Laser light is propagated from a certain position and angle to the next irradiation surface (in this case, the irradiation object 104). Therefore, in order to keep the incident position constant, the correction lens 102 is disposed between the laser oscillator 101 and the beam expander optical system 203. As described above, the laser light oscillated from the laser oscillator 101 is propagated to the beam expander optical system 203 through the correction lens 102, so that the laser light having an unstable optical path is incident on the accurate position of the beam expander optical system 203. Further, the laser beam can be propagated to an accurate position with respect to the surface of the object 104 to be irradiated. That is, here, the correction lens 102 is provided to control the incident position of the laser light incident on the first lens 203 a constituting the beam expander optical system 203.

  The laser light that has passed through the beam expander optical system 203 is propagated to the irradiated object 104. As the irradiated object 104, for example, a diffractive optical element can be used. In general, it is very difficult to reduce the diameter of a diffractive optical element at present, and a method in which a laser beam is expanded by a beam expander optical system and then propagated to the diffractive optical element is applied as a method of using the diffractive optical element. Has been. Therefore, as described above, by providing the correction lens 102 between the laser oscillator 101 and the beam expander optical system 203, the deviation of the incident position of the laser light incident on the irradiated object 104 (for example, the diffractive optical element) can be reduced. Can be reduced.

Further, in the laser beam irradiation apparatus described in this embodiment, when the laser beam oscillated from the laser oscillator 101 is incident on the first lens 203a via the correction lens 102, the emission point of the laser oscillator 101 (or A beam waist, a light source) is defined as a first conjugate point O _1, and a point at which an image of the first conjugate point O ₁ is formed through the correction lens 102 is defined as a second conjugate point O ₂ . the distance from the conjugate point _{O 1} to the correction lens 102 a, the distance from the correction lens 102 to the second conjugate point _{O 2} B, the focal length of the first lens 203a upon the _{f 2,} the first The lens 203a is arranged so that X satisfies B−f ₂ ≦ X ≦ B + 3f ₂ where X is the distance between the correction lens 102 and the first lens 203a.

Arrangement that meets the formula above (here, the focal point of the first lens 203a positioned on the opposite side of the traveling direction of the laser beam) focal point of the first lens 203a when the set to F _2, the second The conjugate point O ₂ satisfies the relationship of being located in the range of 2f ₂ with respect to the traveling direction of the laser light from the focal point F ₂ of the first lens 203a and the opposite direction. By arranging the laser oscillator 101, the correction lens 102, the first lens 203a, and the like so that X satisfies such a relationship, the incidence error of the laser light to the beam expander optical system is reduced, and the irradiation target is irradiated. It is possible to reduce the error in the irradiation position of the laser beam on the object 104.

Incidentally, it is preferred that the distance X is, providing the first lens 203a at a position to be X = B + _{f 2.} That is, the second conjugate point O ₂ is formed at a position that becomes the focal point F ₂ of the first lens 203 a (here, the focal point of the first lens 203 a positioned on the laser beam traveling direction side). 1 lens 203a is provided. In this case, when irradiating the irradiation object 104 with laser light via the beam expander optical system 203, the error in the irradiation position of the laser light on the irradiation object 104 can be reduced most.

When the focal length of the correction lens 102 is f ₁ , the distance from the first conjugate point O ₁ to the correction lens 102 is A, and the distance from the correction lens 102 to the second conjugate point O ₂ is B, the correction is performed. The focal length f ₁ of the lens 102 has a relationship satisfying 1 / A + 1 / B≈1 / f ₁ .

  In the laser beam irradiation apparatus described in this embodiment, the second lens 203b of the beam expander optical system 203 is provided to reduce or expand the spread angle of the laser beam that has passed through the first lens 203a. . The third lens 203c is provided to make the laser light emitted from the second lens 203b parallel light.

  Note that in the laser light irradiation apparatus described in this embodiment, the beam expander optical system 203 has a zoom function. Specifically, when the second lens 203b of the beam expander optical system 203 moves and changes the distance C from the first lens 203a, the focal length of the lens system by the two lenses changes, The magnification of the beam diameter of the laser beam 105 is enlarged or reduced. Further, the third lens 203c works in conjunction with the second lens 203b to make the laser light emitted from the second lens 203b parallel light.

  In general, there is an individual difference in the beam diameter of the laser beam depending on the laser oscillator to be emitted. In order to provide the laser beam of the same size, it is necessary to prepare a beam expander optical system for each laser oscillator. . However, since the laser beam irradiation apparatus shown in this embodiment has the zoom function as described above in the beam expander optical system, it can provide laser beams of an arbitrary size regardless of individual differences of laser oscillators. Is possible.

  Note that the second lens 203b and the third lens 203c are preferably arranged so that the distance D between the second lens 203b and the third lens 203c is within 1 m.

  In addition, the laser beam irradiation apparatus or the laser beam irradiation method described in this embodiment is more effective as the distance between the laser oscillator 101 and the beam expander optical system 203 increases. In general, when an optical system is arranged, it is necessary to provide the optical system with a certain interval in relation to the apparatus. Therefore, the laser beam irradiation apparatus shown in the present embodiment is more preferable when the distance between the laser oscillator 101 and the first lens 203a constituting the beam expander optical system 203 is preferably separated by 0.5 m or more. Is particularly effective when provided at a distance of 1 m or more.

  The present embodiment can be applied to all laser light irradiation apparatuses and laser light irradiation methods using a beam expander optical system.

(Embodiment 3)
In this embodiment, a method for manufacturing a semiconductor device using the laser light irradiation apparatus or the laser light irradiation method described in the above embodiment will be described with reference to drawings.

  First, a separation layer 702 is formed over one surface of a substrate 701, and then an insulating film 703 and an amorphous semiconductor film 704 (for example, a film containing amorphous silicon) serving as a base are formed (see FIG. 6A). ). Note that the separation layer 702, the insulating film 703, and the amorphous semiconductor film 704 can be formed successively.

  As the substrate 701, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating film formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like may be used. If such a substrate is used, the area and shape thereof are not greatly limited. For example, if the substrate 701 is a rectangular substrate having a side of 1 meter or more and a rectangular shape, productivity is remarkably improved. be able to. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that although the separation layer 702 is provided over the entire surface of the substrate 701 in this step, the separation layer 702 may be selectively provided by a photolithography method after being provided over the entire surface of the substrate 701 as needed. In addition, although the separation layer 702 is formed so as to be in contact with the substrate 701, an insulating film serving as a base is formed so as to be in contact with the substrate 701 as necessary, and the separation layer 702 is formed so as to be in contact with the insulation film. May be.

The peeling layer 702 can be formed using a metal film, a stacked structure of a metal film and a metal oxide film, or the like. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A single layer or a stack of films made of an element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component To form. The release layer 702 can be formed using these materials by various CVD methods such as a sputtering method and a plasma CVD method. A stacked structure of a metal film and a metal oxide film, after forming a metal film described above, a plasma treatment under an oxygen atmosphere or an N _{2 O} atmosphere, by performing heat treatment in an oxygen atmosphere or an N _{2 O} atmosphere The oxide or oxynitride of the metal film can be provided on the surface of the metal film. For example, in the case where a tungsten film is provided as a metal film by a sputtering method, a CVD method, or the like, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In forming the tungsten oxide, the oxidation number is not particularly limited, and it is preferable to determine which oxidation number oxide is formed based on the etching rate or the like. In addition, for example, after forming a metal film (for example, tungsten), an insulating film such as silicon oxide is provided on the metal film by a sputtering method, and a metal oxide (for example, tungsten on tungsten) is formed on the metal film. Oxide) may be formed. Further, as the plasma processing, for example, high-density plasma processing may be performed. In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment or heat treatment may be performed on the metal film in a nitrogen atmosphere or a nitrogen and oxygen atmosphere.

  The insulating film 703 is formed as a single layer or a stack of a film containing silicon oxide or silicon nitride by a sputtering method, a plasma CVD method, or the like. In the case where the base insulating film has a two-layer structure, for example, a silicon nitride oxide film may be formed as the first layer and a silicon oxynitride film may be formed as the second layer. When the base insulating film has a three-layer structure, a silicon oxide film is formed as the first insulating film, a silicon nitride oxide film is formed as the second insulating film, and oxynitriding is performed as the third insulating film. A silicon film is preferably formed. Alternatively, a silicon oxynitride film may be formed as the first insulating film, a silicon nitride oxide film may be formed as the second insulating film, and a silicon oxynitride film may be formed as the third insulating film. The insulating film serving as a base functions as a blocking film that prevents impurities from entering from the substrate 701.

  The amorphous semiconductor film 704 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by sputtering, LPCVD, plasma CVD, or the like.

  Next, crystallization is performed by irradiating the amorphous semiconductor film 704 with laser light. Note that the amorphous semiconductor film 704 is crystallized by a combination of laser light irradiation, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or the like. You may go. After that, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 704a, 704b, 704c, and 704d, and the gate insulating film 705 is formed so as to cover the crystalline semiconductor films 704a to 704d. It is formed (see FIG. 6B).

  An example of a manufacturing process of the crystalline semiconductor films 704a to 704d will be briefly described below. First, an amorphous semiconductor film with a thickness of 50 to 60 nm is formed using a plasma CVD method. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. After that, laser light is irradiated and crystalline semiconductor films 704a to 704d are formed by using a photolithography method. Note that the amorphous semiconductor film may be crystallized only by laser light irradiation without performing thermal crystallization using a metal element that promotes crystallization.

  Here, an example of a laser beam irradiation apparatus and a laser beam irradiation method used for laser beam irradiation is shown (see FIG. 4). 4 includes a laser oscillator 901, a correction lens 902, a beam expander optical system 903 having a first lens 903a, a second lens 903b, and a third lens 903c, and a diffractive optical element 904. And a mirror 905, a suction stage 908, an X stage 909, and a Y stage 910.

  First, a substrate 701 on which an amorphous semiconductor film 704 is formed is prepared. The substrate 701 is fixed on the suction stage 908. The suction stage 908 can be freely moved in the X-axis and Y-axis directions by using the X stage 909 and the Y stage 910. Note that various stages such as a motor stage, a ball bearing stage, and a linear motor stage can be used for movement in the X-axis direction and the Y-axis direction.

  The laser light oscillated from the laser oscillator 901 enters the beam expander optical system 903 via the correction lens 902, and the scale of the laser light is greatly enlarged by the beam expander optical system 903, and then passes through the diffractive optical element 904. After that, the amorphous semiconductor film 704 provided over the substrate 701 is irradiated.

As the laser oscillator 901, a continuous oscillation laser oscillator (CW laser oscillator) or a pulse oscillation laser oscillator (pulse laser oscillator) can be used. The laser beam that can be used here is a gas laser such as an Ar laser, a Kr laser, or an excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants A laser oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonic laser beams of these fundamental waves, a crystal having a large grain size can be obtained. For example, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. In this case, a power density of the laser is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec. Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta, a laser using a medium added with one or more, an Ar ion laser, or a Ti: sapphire laser should be continuously oscillated. It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation or mode synchronization. When the laser beam is oscillated at an oscillation frequency of 10 MHz or more, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

  Further, the laser oscillator 901, the correction lens 902, and the first lens 903a are arranged so as to satisfy the relationship shown in the first embodiment. In this way, by providing the correction lens 902 between the laser oscillator 901 and the first lens 903a, the laser light incident on the substrate 701 through the diffractive optical element 904 after passing through the beam expander optical system 903 is obtained. The positional deviation can be reduced, and the irradiation position of the laser beam can be accurately controlled.

  In addition, the first lens 903a, the second lens 903b, and the third lens 903c of the beam expander optical system 903 are arranged so as to satisfy the relationship described in the first embodiment. As described above, the second lens 903b and the third lens 903c are moved according to the size of the beam diameter of the laser light emitted from the laser oscillator, so that any arbitrary difference can be obtained regardless of the individual difference of the laser oscillator 901. Can be provided.

  Typical examples of the diffractive optical element 904 include a holographic optical element and a binary optical element. The diffractive optical element 904 is also called a diffractive optics or a diffractive optics element, and is an element that obtains a spectrum by utilizing light diffraction. A material that exhibits a condensing lens function by forming a plurality of grooves on the surface of the diffractive optical element 904 is used. By using the diffractive optical element 904, the laser light emitted from the laser oscillator can be formed into a linear or rectangular laser light having a uniform energy distribution.

  Note that a laser beam irradiation apparatus that can be used in this embodiment mode is not limited to the configuration in FIG. Although FIG. 4 shows the case where the first lens 903a constituting the beam expander optical system 903 is a concave lens, this may be replaced with a convex lens, for example. In this case, the convex lens replaced in place of the laser oscillator 901, the correction lens 902, and the first lens 903a is disposed so as to satisfy the relationship shown in the second embodiment. In FIG. 4, the second lens 903b is a convex lens. However, for example, this may be replaced with a concave lens.

  A condensing lens may be provided on the irradiation surface side or the laser side of the diffractive optical element 904. For example, two cylindrical lenses can be used. In this case, laser light is incident perpendicularly to the two cylindrical lenses. Since the cylindrical lens has a curvature in one direction, it can be condensed or diffused only in a one-dimensional direction. Therefore, by making the curvature directions of the two cylindrical lenses the X-axis direction and the Y-axis direction, respectively, the size of the beam spot on the irradiation surface can be arbitrarily changed in the XY direction, so that optical adjustment is easy. Yes, and the degree of freedom of adjustment is high. Alternatively, a single cylindrical lens may be used to act only in one direction. In addition, when focusing is performed while maintaining the ratio of the major axis to the minor axis of the image formed by the diffractive optical element 904, a spherical lens may be used instead of the cylindrical lens.

  Note that in the laser light irradiation apparatus illustrated in FIG. 4, the distance between the laser oscillator 901 and the first lens 903 a is preferably 0.5 m or more, more preferably 1 m or more, in terms of the apparatus. In addition, it is preferable to dispose the second lens 903b and the third lens 903c so that the distance between the second lens 903b and the third lens 903c is within 1 m.

  As described above, the amorphous semiconductor film 704 can be uniformly crystallized by using the above-described laser light irradiation method.

  Next, an example of a method for manufacturing the gate insulating film 705 (see FIG. 6B) covering the crystalline semiconductor films 704a to 704d is described below. The gate insulating film 705 is formed by a single layer or a stack of films containing silicon oxide or silicon nitride by a CVD method, a sputtering method, or the like. Specifically, a film containing silicon oxide, a film containing silicon oxynitride, or a film containing silicon nitride oxide is formed as a single layer or a stacked layer.

Alternatively, the gate insulating film 705 may be formed by performing high-density plasma treatment on the crystalline semiconductor films 704a to 704d and oxidizing or nitriding the surface. For example, the plasma treatment is performed by introducing a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide (NO ₂ ), ammonia, nitrogen, or hydrogen. When excitation of plasma in this case is performed by introducing microwaves, high-density plasma can be generated at a low electron temperature. The surface of the semiconductor film can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by this high-density plasma.

  By such treatment using high-density plasma, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the semiconductor film. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the semiconductor film can be extremely low. Such high-density plasma treatment directly oxidizes (or nitrides) a semiconductor film (crystalline silicon or polycrystalline silicon), so that the variation in thickness of the formed insulating film is ideally extremely small. can do. In addition, since oxidation is not strengthened even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, the surface of the semiconductor film is solid-phase oxidized by the high-density plasma treatment shown here, thereby forming an insulating film with good uniformity and low interface state density without causing an abnormal oxidation reaction at the grain boundaries. can do.

  As the gate insulating film, only an insulating film formed by high-density plasma treatment may be used, or an insulating film such as silicon oxide, silicon oxynitride, or silicon nitride is deposited by a CVD method using plasma or thermal reaction. , May be laminated. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

  Further, the crystalline semiconductor films 704a to 704d obtained by scanning in one direction while irradiating the semiconductor film with a continuous wave laser beam or a laser beam oscillating at a frequency of 10 MHz or higher are crystallized. There is a characteristic that crystals grow in the scanning direction. By arranging the transistors in accordance with the scanning direction in the channel length direction (the direction in which carriers flow when a channel formation region is formed) and combining the gate insulating layer, characteristic variation is small and field effect mobility is reduced. A high thin film transistor (TFT) can be obtained.

  Next, a first conductive film and a second conductive film are stacked over the gate insulating film 705. Here, the first conductive film is formed with a thickness of 20 to 100 nm by a plasma CVD method, a sputtering method, or the like. The second conductive film is formed with a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride film and a tungsten film, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, and the like. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

  Next, a resist mask is formed using photolithography, and an etching process is performed to form the gate electrode and the gate line, so that the gate electrode 707 is formed above the crystalline semiconductor films 704a to 704d.

  Next, a resist mask is formed by photolithography, and an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 704a to 704d at a low concentration by ion doping or ion implantation. As the impurity element imparting n-type conductivity, an element belonging to Group 15 may be used. For example, phosphorus (P) or arsenic (As) is used.

  Next, an insulating film is formed so as to cover the gate insulating film 705 and the gate electrode 707. The insulating film is formed by a single layer or a stacked layer of a film containing an inorganic material such as silicon, silicon oxide or silicon nitride, or a film containing an organic material such as an organic resin by plasma CVD or sputtering. To do. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction, so that an insulating film 708 (also referred to as a sidewall) in contact with the side surface of the gate electrode 707 is formed. The insulating film 708 is used as a doping mask when an LDD (Lightly Doped Drain) region is formed later.

  Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 704a to 704d using a resist mask formed by a photolithography method, the gate electrode 707, and the insulating film 708 as masks. An n-type impurity region 706a (also referred to as an LDD region), a second n-type impurity region 706b, and a channel region 706c are formed (see FIG. 6C). The concentration of the impurity element contained in the first n-type impurity region 706a is lower than the concentration of the impurity element in the second n-type impurity region 706b.

  Subsequently, an insulating film is formed as a single layer or a stacked layer so as to cover the gate electrode 707, the insulating film 708, and the like, so that thin film transistors 730a, 730b, 730c, and 730d are formed (see FIG. 6D). Insulating film is formed by CVD, sputtering, SOG, droplet discharge, screen printing, etc., inorganic materials such as silicon oxide and silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy, etc. A single layer or a stacked layer is formed using an organic material, a siloxane material, or the like. For example, when the insulating film has a two-layer structure, a silicon nitride oxide film can be formed as the first insulating film 709 and a silicon oxynitride film can be formed as the second insulating film 710.

  Note that before the insulating films 709 and 710 are formed, or after one or both of the insulating films 709 and 710 are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  Next, the insulating films 709 and 710 and the like are etched by photolithography to form contact holes that expose the second n-type impurity regions 706b. Subsequently, a conductive film is formed so as to fill the contact hole, and the conductive film is selectively etched to form a conductive film 731. Note that silicide may be formed on the surfaces of the crystalline semiconductor films 704a to 704d exposed in the contact holes before the conductive film is formed.

  The conductive film 731 is an element selected from aluminum, tungsten, titanium, tantalum, molybdenum, nickel, platinum, copper, gold, silver, manganese, neodymium, carbon, silicon, or these elements by a CVD method, a sputtering method, or the like. An alloy material or a compound material containing as a main component is formed in a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. For example, the conductive film 731 may have a stacked structure of a barrier film, an aluminum silicon film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon film, a titanium nitride film, and a barrier film. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive film 731 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

  Next, an insulating film 711 is formed so as to cover the conductive film 731, and a conductive film 712 is formed over the insulating film 711 so as to be electrically connected to the conductive film 731 (see FIG. 7A). The insulating film 711 is formed as a single layer or a stacked layer using an inorganic material or an organic material by a CVD method, a sputtering method, an SOG method, a droplet discharge method, a screen printing method, or the like. The insulating film 711 is preferably formed with a thickness of 0.75 to 3 μm. The conductive film 712 can be formed using any of the materials described for the conductive film 731 described above.

  Next, a conductive film 713 is formed over the conductive film 712. The conductive film 713 is formed using a conductive material by a CVD method, a sputtering method, a droplet discharge method, a screen printing method, or the like (see FIG. 7B). Preferably, the conductive film 713 is formed using an element selected from aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), and gold (Au), or an alloy material containing these elements as a main component, or The compound material is formed as a single layer or a stacked layer. Here, a paste containing silver is formed over the conductive film 712 by a screen printing method, and then heat treatment is performed at 50 to 350 degrees to form the conductive film 713. Alternatively, after the conductive film 713 is formed over the conductive film 712, laser light irradiation may be performed on a region where the conductive film 713 and the conductive film 712 overlap in order to improve electrical connection. Note that the conductive film 713 can be selectively provided over the conductive film 731 without providing the insulating film 711 and the conductive film 712.

  Next, an insulating film 714 is formed so as to cover the conductive films 712 and 713, and the insulating film 714 is selectively etched by photolithography to form an opening 715 that exposes the conductive film 713 (FIG. 7 ( C)). The insulating film 714 is formed as a single layer or a stacked layer using an inorganic material or an organic material by a CVD method, a sputtering method, an SOG method, a droplet discharge method, a screen printing method, or the like.

Next, a layer including the thin film transistors 730 a to 730 d and the like (hereinafter also referred to as “layer 732”) is peeled from the substrate 701. Here, after the opening 716 is formed by irradiation with laser light (eg, UV light) (see FIG. 8A), the layer 732 can be peeled from the substrate 701 with physical force. Alternatively, before the layer 732 is peeled from the substrate 701, an etching agent may be introduced into the opening 716 to remove the peeling layer 702. As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the layer 732 is peeled from the substrate 701. Note that the peeling layer 702 may be partially left without being completely removed. By doing so, it is possible to suppress the consumption of the etching agent and shorten the processing time required for removing the release layer. Further, the layer 732 can be held on the substrate 701 even after the peeling layer 702 is removed. In addition, the substrate 701 from which the layer 732 is peeled is preferably reused for cost reduction.

  Here, after the insulating film is etched by laser light irradiation to form the opening 716, one surface of the layer 732 (the exposed surface of the insulating film 714) is bonded to the first sheet material 717 to form a substrate. Peel completely from 701 (see FIG. 8B). As the first sheet material 717, for example, a heat peeling tape whose adhesive strength is weakened by applying heat can be used.

  Next, the second sheet material 718 is provided on the other surface (the peeled surface) of the layer 732, and then one or both of heat treatment and pressure treatment are performed to bond the second sheet material 718. In addition, when the second sheet material 718 is provided, the first sheet material 717 is peeled at the same time or after the second sheet material 718 is provided (see FIG. 9A). As the second sheet material 718, a hot melt film or the like can be used. In the case where a heat peeling tape is used as the first sheet material 717, the heat can be peeled using heat applied when the second sheet material 718 is bonded.

  Further, as the second sheet material 718, a film provided with an antistatic measure for preventing static electricity or the like (hereinafter referred to as an antistatic film) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, surfactants such as metals, oxides of indium and tin (ITO), amphoteric surfactants, cationic surfactants and nonionic surfactants can be used. . In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By providing the antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when the semiconductor device is handled as a product.

  Next, an element group 733 is formed by forming a conductive film 719 so as to cover the opening 715 (see FIG. 9B). Note that electrical connection may be improved by irradiating the conductive films 712 and 713 with laser light before or after the conductive film 719 is formed.

  Next, the element group 733 is selectively irradiated with laser light to be divided into a plurality of element groups (see FIG. 10A).

  Next, the element group 733 is bonded to the substrate 721 over which the conductive film 722 functioning as an antenna is formed (see FIG. 10B). Specifically, the conductive film 722 functioning as an antenna formed over the substrate 721 and the conductive film 719 of the element group 733 are attached to each other so as to be electrically connected. Here, the substrate 721 and the element group 733 are bonded using a resin 723 having adhesiveness. Further, the conductive film 722 and the conductive film 719 are electrically connected using conductive particles 724 included in the resin 723.

  Note that this embodiment can be freely combined with the above embodiment. In other words, the materials and formation methods described in the above embodiments can be used in combination with this embodiment, and the materials and formation methods described in this embodiment are also used in combination with the above embodiments. be able to.

(Embodiment 4)
In this embodiment, an example of usage of a semiconductor device obtained using the manufacturing method described in Embodiment 3 will be described. Specifically, application examples of a semiconductor device capable of inputting and outputting data without contact will be described below with reference to the drawings. A semiconductor device in which data can be input / output without contact is also referred to as an RFID tag, an ID tag, an IC tag, an IC chip, an RF tag, a wireless tag, an electronic tag, or a wireless chip depending on the application.

  The semiconductor device 80 has a function of communicating data without contact, and controls the high frequency circuit 81, the power supply circuit 82, the reset circuit 83, the clock generation circuit 84, the data demodulation circuit 85, the data modulation circuit 86, and other circuits. A control circuit 87, a memory circuit 88, and an antenna 89 are provided (see FIG. 11A). The high frequency circuit 81 is a circuit that receives a signal from the antenna 89 and outputs the signal received from the data modulation circuit 86 from the antenna 89, and the power supply circuit 82 is a circuit that generates a power supply potential from the received signal, and a reset circuit 83. Is a circuit that generates a reset signal, a clock generation circuit 84 is a circuit that generates various clock signals based on the reception signal input from the antenna 89, and a data demodulation circuit 85 demodulates the reception signal to control the control circuit 87. The data modulation circuit 86 is a circuit that modulates the signal received from the control circuit 87. The control circuit 87 includes, for example, a code extraction circuit 91, a code determination circuit 92, a CRC determination circuit 93, and an output unit circuit 94. The code extraction circuit 91 is a circuit that extracts a plurality of codes included in an instruction sent to the control circuit 87, and the code determination circuit 92 compares the extracted code with a code corresponding to a reference. The CRC determination circuit 93 is a circuit that detects the presence or absence of a transmission error or the like based on the determined code.

  Next, an example of operation of the above-described semiconductor device will be described. First, a radio signal is received by the antenna 89. The radio signal is sent to the power supply circuit 82 via the high frequency circuit 81, and a high power supply potential (hereinafter referred to as VDD) is generated. VDD is supplied to each circuit included in the semiconductor device 80. The signal sent to the data demodulation circuit 85 via the high frequency circuit 81 is demodulated (hereinafter, demodulated signal). Further, the signal and the demodulated signal that have passed through the reset circuit 83 and the clock generation circuit 84 via the high frequency circuit 81 are sent to the control circuit 87. The signal sent to the control circuit 87 is analyzed by the code extraction circuit 91, the code determination circuit 92, the CRC determination circuit 93, and the like. Then, information on the semiconductor device stored in the memory circuit 88 is output in accordance with the analyzed signal. The output semiconductor device information is encoded through the output unit circuit 94. Further, the encoded information of the semiconductor device 80 passes through the data modulation circuit 86 and is transmitted on the radio signal by the antenna 89. Note that in a plurality of circuits included in the semiconductor device 80, a low power supply potential (hereinafter referred to as VSS) is common and VSS can be GND.

  As described above, by transmitting a signal from the reader / writer to the semiconductor device 80 and receiving the signal transmitted from the semiconductor device 80 by the reader / writer, the data of the semiconductor device can be read.

  Further, the semiconductor device 80 may be of a type in which power supply voltage is supplied to each circuit by electromagnetic waves without mounting a power source (battery), or each circuit is mounted by using electromagnetic waves and a power source (battery). It is good also as a type which supplies a power supply voltage to.

  By using the manufacturing method described in Embodiment Mode 3, a semiconductor device that can be bent can be manufactured; therefore, it can be attached to an object having a curved surface.

  Next, an example of usage of a semiconductor device that is flexible and can input and output data without contact will be described. A reader / writer 3200 is provided on a side surface of the portable terminal including the display portion 3210, and a semiconductor device 3230 is provided on a side surface of the article 3220 (see FIG. 11B). When the reader / writer 3200 is held over the semiconductor device 3230 included in the product 3220, information about the product such as the description of the product, such as the raw material and origin of the product, the inspection result for each production process and the history of the distribution process, is displayed on the display unit 3210. Is done. Further, when the product 3260 is conveyed by the belt conveyor, the product 3260 can be inspected using the reader / writer 3240 and the semiconductor device 3250 provided in the product 3260 (see FIG. 11C). . In this manner, by using a semiconductor device in the system, information can be easily acquired, and high functionality and high added value are realized.

  As a signal transmission method in the semiconductor device capable of inputting and outputting non-contact data as described above, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be appropriately selected by the practitioner in consideration of the intended use, and an optimal antenna may be provided according to the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a signal transmission method in a semiconductor device, the conductive film functioning as an antenna is used because electromagnetic induction due to a change in magnetic field density is used. Are formed in a ring shape (for example, a loop antenna) or a spiral shape (for example, a spiral antenna).

  In addition, when a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a signal transmission method in a semiconductor device, the wavelength of an electromagnetic wave used for signal transmission is considered. The shape such as the length of the conductive film functioning as an antenna may be set as appropriate. For example, the conductive film functioning as an antenna can be formed into a linear shape (for example, a dipole antenna), a flat shape (for example, a patch antenna), a ribbon shape, or the like. Further, the shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

  The conductive film functioning as an antenna is formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. The conductive material is an element selected from aluminum, titanium, silver, copper, gold, platinum, nickel, palladium, tantalum, and molybdenum, or an alloy material or a compound material containing these elements as a main component, and has a single-layer structure or It is formed with a laminated structure.

  For example, when a conductive film that functions as an antenna is formed using a screen printing method, a conductive paste in which conductive particles having a particle size of several nanometers to several tens of micrometers are dissolved or dispersed in an organic resin is selectively used. Can be provided by printing. As the conductor particles, use one or more metal particles such as silver, gold, copper, nickel, platinum, palladium, tantalum, molybdenum, and titanium, silver halide fine particles, or dispersible nanoparticles. Can do. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins that function as a binder, a solvent, a dispersant, and a coating material of metal particles can be used. Typically, an organic resin such as an epoxy resin or a silicone resin can be given. In forming the conductive film, baking is preferably performed after providing a conductive paste. For example, when fine particles containing silver as a main component (for example, a particle size of 1 nm or more and 100 nm or less) are used as a material for the conductive paste, the conductive film is obtained by being cured by baking in a temperature range of 150 to 300 ° C. Can do. Further, fine particles mainly composed of solder or lead-free solder may be used. In this case, it is preferable to use fine particles having a particle diameter of 20 μm or less. Solder and lead-free solder have the advantage of low cost.

  In addition to the materials described above, ceramics, ferrites, etc. may be applied to the antenna, and other materials (metamaterials) that have a negative dielectric constant and magnetic permeability in the microwave band may be applied to the antenna. Is also possible.

  Further, in the case where an electromagnetic coupling method or an electromagnetic induction method is applied and a semiconductor device provided with an antenna is provided in contact with a metal, a magnetic material having a permeability between the semiconductor device and the metal is used. It is preferable to provide it. When a semiconductor device provided with an antenna is provided in contact with a metal, an eddy current flows in the metal as the magnetic field changes, and the change in the magnetic field is weakened by the demagnetizing field generated by the eddy current, thereby reducing the communication distance. . Therefore, by providing a material having magnetic permeability between the semiconductor device and the metal, it is possible to suppress the eddy current of the metal and suppress the decrease in the communication distance. As the magnetic material, a metal thin film having high magnetic permeability and low high-frequency loss, or ferrite can be used.

  In addition to the above, flexible semiconductor devices have a wide range of uses, and any product that can be used for production, management, etc. without contact and clarifying information such as the history of objects. Can be applied. For example, banknotes, coins, securities, certificate documents, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, health supplies, daily necessities, medicines, etc. It can be provided and used in an electronic device or the like. These examples will be described with reference to FIG.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, etc. (see FIG. 12A). The certificate refers to a driver's license, a resident's card, etc. (see FIG. 12B). Bearer bonds refer to stamps, gift cards, various gift certificates, and the like (see FIG. 12C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (see FIG. 12D). Books refer to books, books, and the like (see FIG. 12E). The recording media refer to DVD software, video tapes, and the like (see FIG. 12F). The vehicles refer to vehicles such as bicycles, ships, and the like (see FIG. 12G). Personal belongings refer to bags, glasses, and the like (see FIG. 12H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (television receivers, flat-screen television receivers), cellular phones, and the like.

  Forgery can be prevented by providing the semiconductor device 20 on bills, coins, securities, certificate documents, bearer bonds, and the like. Also, by providing the semiconductor device 20 in personal items such as packaging containers, books, recording media, personal items, foods, daily necessities, electronic equipment, etc., the efficiency of inspection systems and rental store systems will be improved. Can do. By providing the semiconductor device 20 in vehicles, health supplies, medicines, etc., it is possible to prevent forgery and theft, and in the case of medicines, mistakes in taking medicine can be prevented. The semiconductor device 20 can be provided by being attached to the surface of the article or embedded in the article. For example, a book can be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Since the semiconductor device has flexibility, even when the semiconductor device is provided on paper or the like, damage to elements included in the semiconductor device can be prevented by using the structure described in the above embodiment mode. can do.

  In this way, by providing semiconductor devices in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. it can. Further, forgery or theft can be prevented by providing a semiconductor device in the vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding a semiconductor device equipped with a sensor in a living creature such as livestock, it is possible to easily manage health conditions such as body temperature as well as the year of birth, gender or type.

  Note that this embodiment can be freely combined with the above embodiment. In other words, the materials and formation methods described in the above embodiments can be used in combination with this embodiment, and the materials and formation methods described in this embodiment are also used in combination with the above embodiments. be able to.

  In the present embodiment, when the laser expander optical system having a laser oscillator, a correction lens, and a zoom function is arranged as shown in FIG. 1, the image of the exit point of the laser oscillator is formed by the correction lens. The calculation result when the beam expander optical system is moved will be described.

  First, as shown in FIG. 13, a laser oscillator 601, a correction lens 602, a concave lens 603a as a first lens constituting a beam expander optical system 603, a convex lens 603b as a second lens, and a third lens as Assume an optical system in which a convex lens 603c and an object to be irradiated 604 are sequentially arranged in the traveling direction of laser light oscillated from a laser oscillator 601. When the laser oscillator 601 oscillates by shifting the angle of the laser beam 605 by θ ° with respect to the horizontal direction, the arrangement of the concave lens 603a (distance X between the correction lens 602 and the concave lens 603a) is changed. The irradiation position of the laser beam applied to the irradiation object 604 was calculated. The irradiation position was compared with the irradiation position of θ = 0 ° as a reference.

Here, when the laser beam 605 oscillated from the laser oscillator 601 is incident on the concave lens 603a via the correction lens 602, the emission point (or beam waist, light source) of the laser oscillator 601 is the first conjugate point. and O _1, the first image of the conjugate point O ₁ is a conjugate point O ₂ to the point to be imaged of the second through the correction lens 602, the distance from the first conjugate point O ₁ to the correction lens 602 Where A is B, the distance from the correction lens 602 to the second conjugate point O ₂ is B, and the focal length of the concave lens 603a is f ₂ , A = B = 500 mm and f ₂ = 10.3 mm. . The distance between the concave lens 603a and the convex lens 603b is always constant.

  The radius of curvature of the correction lens 602 is 137 mm, the radius of curvature of the concave lens 603a is 11.37 mm, the radius of curvature of the convex lens 603b and the convex lens 603c is 271.5 mm, the thickness of the correction lens 602 is 2.7 mm, and the thickness of the concave lens 603a. The calculation was performed assuming that the thickness of the convex lens 603b and the convex lens 603c was 5.1 mm.

  Table 1 shows the calculation result of the irradiation position of the laser beam irradiated to the irradiation object 604 in the case where θ = 0.717 °. The value of θ is actually the laser oscillated from the laser oscillator 601 generated by the use environment such as temperature change when the laser oscillator, the correction lens, and the beam expander optical system are arranged as shown in FIG. This is a numerical value that takes into account the error of the light emission angle.

From Table 1, when θ = 0.0017 °, X = 470 mm to X = 490 mm, that is, the second conjugate point O ₂ is the laser beam traveling direction from the focal point F _{2 of the} concave lens 603a and the opposite direction. On the other hand, within the range of 2f ₂ , it can be said that the deviation of the irradiation position of the laser beam applied to the irradiated object is sufficiently small. In addition, when X = 490 mm (when the second conjugate point O ₂ and the focal point F _{2 of the} concave lens 603a substantially overlap), the result of the smallest deviation of the laser light irradiation position was obtained.

From the above calculation results, even when the emission angle θ from the laser oscillator 601 is changed, the second conjugate point O ₂ moves from the focal point F _{2 of the} concave lens 603a to the traveling direction of the laser beam and the opposite direction. Within each range of 2f ₂ , the deviation of the irradiation position of the laser beam is sufficiently small. Further, when the second conjugate point O ₂ and the focal point F _{2 of the} concave lens 603a are substantially overlapped, the deviation of the irradiation position of the laser beam irradiated to the irradiation object becomes the smallest. Therefore, by providing a correction lens between the laser oscillator and the beam expander optical system to reduce the deviation of the incident position of the laser beam on the beam expander optical system, the deviation of the irradiation position of the laser beam on the irradiated object can be reduced. Can be reduced.

Next, the results of a similar investigation are shown for the case where the concave lens 603a as the first lens of the beam expander optical system is replaced with the convex lens 613a (see FIG. 14). Incidentally, the curvature radius of the convex lens 613a 11.37Mm, and its thickness was 2.55 mm, the focal length _{f 2} of the convex lens 613a was calculated as _f 2 = 10.3 mm. Other conditions were set in the same manner as in FIG.

  Table 2 shows the calculation result of the irradiation position of the laser beam irradiated to the irradiation object 604 in the case where θ = 0.717 °. The value of θ is actually a laser oscillated from the laser oscillator 601 generated by the state of use environment such as a temperature change when the laser oscillator, the correction lens, and the beam expander optical system are arranged as shown in FIG. This is a numerical value that takes into account the error of the light emission angle.

From Table 2, when θ = 0.0017 °, the range of X = 490 mm to X = 530 mm, that is, the second conjugate point O ₂ is the laser beam traveling direction from the focal point F _{2 of the} convex lens 613a and the opposite direction. On the other hand, within the range of 2f ₂ , it can be said that the deviation of the irradiation position of the laser beam applied to the irradiated object is sufficiently small. In addition, when X = 510 mm (when the second conjugate point O ₂ and the focal point F _{2 of the} convex lens 613a substantially overlap), the result of the smallest deviation of the irradiation position of the laser light irradiated on the irradiated object is obtained. It was.

From the above calculation results, even when the emission angle θ from the laser oscillator 601 is changed, the second conjugate point O ₂ moves from the focal point F _{2 of the} convex lens 613a to the traveling direction of the laser beam and the opposite direction. Within each range of 2f ₂ , the deviation of the irradiation position of the laser beam is sufficiently small. Furthermore, the deviation of the irradiation position of the laser beam irradiated to the irradiated object becomes the smallest when the focal point F ₂ of the second conjugate point O ₂ and the convex lens 613a overlaps schematic. Therefore, by providing a correction lens between the laser oscillator and the beam expander optical system to reduce the deviation of the incident position of the laser beam on the beam expander optical system, the deviation of the irradiation position of the laser beam on the irradiated object can be reduced. Can be reduced.

The figure which shows an example of the laser beam irradiation apparatus of this invention. The figure which shows an example of the laser beam irradiation apparatus of this invention. The figure which shows an example of the laser beam irradiation apparatus of this invention. The figure which shows an example of the laser beam irradiation apparatus of this invention. The figure which shows an example of the conventional laser beam irradiation apparatus. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device using a laser beam irradiation apparatus of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device using a laser beam irradiation apparatus of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device using a laser beam irradiation apparatus of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device using a laser beam irradiation apparatus of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device using a laser beam irradiation apparatus of the present invention. FIG. 13 illustrates an example of a usage mode of a semiconductor device manufactured using the laser irradiation apparatus of the present invention. FIG. 13 illustrates an example of a usage mode of a semiconductor device manufactured using the laser irradiation apparatus of the present invention. The figure which shows an example of the laser beam irradiation apparatus of this invention. The figure which shows an example of the laser beam irradiation apparatus of this invention.

Explanation of symbols

101 Laser oscillator 102 Correction lens 103 Beam expander optical system 103a First lens 103b Second lens 103c Third lens 104 Object 105 Laser light 203 Beam expander optical system 203a First lens 203b Second lens 203c Second lens 203c 3 lenses

Claims (17)

A laser oscillator;
A beam expander optical system having a first lens, a second lens, and a third lens in order in the traveling direction of the laser light oscillated from the laser oscillator, and having a zoom function;
A correction lens disposed between the laser oscillator and the beam expander optical system;
A mechanism for changing a distance between the first lens and the second lens in order to enlarge or reduce the beam diameter of the laser light;
The laser beam irradiation apparatus, wherein the third lens collaborates with the second lens to convert the laser beam into parallel light. A laser oscillator;
A beam expander optical system having a first lens, a second lens, and a third lens in order in the traveling direction of the laser light oscillated from the laser oscillator, and having a zoom function;
A correction lens disposed between the laser oscillator and the beam expander optical system;
A mechanism for changing a distance between the first lens and the second lens in order to enlarge or reduce the beam diameter of the laser light;
The first lens is a concave lens;
The laser beam irradiation apparatus, wherein the third lens collaborates with the second lens to convert the laser beam into parallel light. In claim 2,
The emission point of the laser oscillator is a first conjugate point, the point at which the image of the first conjugate point is imaged through the correction lens is the second conjugate point, and the second conjugate point is the second conjugate point. If the distance to the conjugate point is B, the focal length of the first lens is f, and the distance between the correction lens and the first lens is X,
X is
B-3 | f | ≦ X ≦ B + | f |
The laser beam irradiation apparatus characterized by satisfy | filling. 3. The correction lens according to claim 2, wherein an emission point of the laser oscillator is a first conjugate point, and a point at which an image of the first conjugate point is formed through the correction lens is a second conjugate point. When the distance from the second conjugate point to B is B, the focal length of the first lens is f, and the distance between the correction lens and the first lens is X, the X is
X = B− | f |,
A laser beam irradiation apparatus characterized by the above. A laser oscillator;
A beam expander optical system having a first lens, a second lens, and a third lens in order in the traveling direction of the laser light oscillated from the laser oscillator, and having a zoom function;
A correction lens disposed between the laser oscillator and the beam expander optical system;
A mechanism for changing a distance between the first lens and the second lens in order to enlarge or reduce the beam diameter of the laser light;
The first lens is a convex lens;
The laser beam irradiation apparatus, wherein the third lens collaborates with the second lens to convert the laser beam into parallel light. In claim 5,
The emission point of the laser oscillator is a first conjugate point, the point at which the image of the first conjugate point is imaged through the correction lens is the second conjugate point, and the second conjugate point is the second conjugate point. If the distance to the conjugate point is B, the focal length of the first lens is f, and the distance between the correction lens and the first lens is X,
X is
B−f ≦ X ≦ B + 3f,
The laser beam irradiation apparatus characterized by satisfy | filling. In claim 5,
The emission point of the laser oscillator is a first conjugate point, the point at which the image of the first conjugate point is imaged through the correction lens is the second conjugate point, and the second conjugate point is the second conjugate point. If the distance to the conjugate point is B, the focal length of the first lens is f, and the distance between the correction lens and the first lens is X,
X is
X = B + f,
A laser beam irradiation apparatus characterized by the above. In any one of Claims 1 thru | or 7,
A laser beam irradiation apparatus, wherein a distance between the laser oscillator and the first lens is 0.5 m or more. In any one of Claims 1 thru | or 8,
The laser light irradiation apparatus, wherein the third lens is a convex lens. In any one of Claims 1 thru | or 9,
The laser light irradiation apparatus, wherein the correction lens is a convex lens. In any one of Claims 1 thru | or 10,
2. A laser light irradiation apparatus, comprising: a diffractive optical element that makes the laser light incident through the beam expander optical system incident thereon. Laser light is emitted from the laser oscillator,
The laser light is incident on the correction lens,
When the laser light emitted from the correction lens is sequentially incident on the first lens, the second lens, and the third lens of the beam expander optical system having a zoom function,
The first lens is a concave lens;
The second lens moves in a direction to change the distance from the first lens, and enlarges or reduces the beam diameter of the laser light,
The third lens works in conjunction with the second lens to make the laser light parallel light,
The emission point of the laser oscillator is a first conjugate point, the point at which the image of the first conjugate point is imaged through the correction lens is the second conjugate point, and the second conjugate point is the second conjugate point. If the distance to the conjugate point is B, the focal length of the first lens is f, and the distance between the correction lens and the first lens is X,
X is B-3 | f | ≦ X ≦ B + | f |,
The laser light irradiation method, wherein the laser oscillator, the correction lens, and the first lens are disposed so as to satisfy the above-described conditions, and laser light is irradiated. Laser light is emitted from the laser oscillator,
The laser light is incident on the correction lens,
When the laser light emitted from the correction lens is sequentially incident on the first lens, the second lens, and the third lens of the beam expander optical system having a zoom function,
The first lens is a convex lens;
The second lens moves in a direction to change the distance from the first lens, and enlarges or reduces the beam diameter of the laser light,
The third lens works in conjunction with the second lens to make the laser light parallel light,
The emission point of the laser oscillator is a first conjugate point, the point at which the image of the first conjugate point is imaged through the correction lens is the second conjugate point, and the second conjugate point is the second conjugate point. If the distance to the conjugate point is B, the focal length of the first lens is f, and the distance between the correction lens and the first lens is X,
X is B−f ≦ X ≦ B + 3f,
The laser light irradiation method, wherein the laser oscillator, the correction lens, and the first lens are disposed so as to satisfy the above-described conditions, and laser light is irradiated. In claim 12 or 13,
A laser light irradiation method comprising irradiating a laser beam with a distance of 0.5 m or more between the laser oscillator and the first lens. In any one of Claims 12 thru | or 14,
The method of irradiating laser light, wherein the third lens is a convex lens. In any one of Claims 12 thru | or 15,
The method for irradiating laser light, wherein the correction lens is a convex lens. In any one of Claims 12 thru | or 16,
A laser light irradiation method, wherein the laser light that has passed through the beam expander optical system is incident on a diffractive optical element.

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