JP2008091910A5 - - Google Patents

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Publication number
JP2008091910A5
JP2008091910A5 JP2007251152A JP2007251152A JP2008091910A5 JP 2008091910 A5 JP2008091910 A5 JP 2008091910A5 JP 2007251152 A JP2007251152 A JP 2007251152A JP 2007251152 A JP2007251152 A JP 2007251152A JP 2008091910 A5 JP2008091910 A5 JP 2008091910A5
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JP
Japan
Prior art keywords
semiconductor laser
absorption region
semiconductor
region
absorption
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Pending
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JP2007251152A
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English (en)
Japanese (ja)
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JP2008091910A (ja
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Publication date
Priority claimed from DE102006046297A external-priority patent/DE102006046297A1/de
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Publication of JP2008091910A publication Critical patent/JP2008091910A/ja
Publication of JP2008091910A5 publication Critical patent/JP2008091910A5/ja
Pending legal-status Critical Current

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JP2007251152A 2006-09-29 2007-09-27 半導体レーザ Pending JP2008091910A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006046297A DE102006046297A1 (de) 2006-09-29 2006-09-29 Halbleiterlaser

Publications (2)

Publication Number Publication Date
JP2008091910A JP2008091910A (ja) 2008-04-17
JP2008091910A5 true JP2008091910A5 (https=) 2011-06-16

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ID=38667082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007251152A Pending JP2008091910A (ja) 2006-09-29 2007-09-27 半導体レーザ

Country Status (4)

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US (1) US20080089374A1 (https=)
EP (1) EP1906498A1 (https=)
JP (1) JP2008091910A (https=)
DE (1) DE102006046297A1 (https=)

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DE102019103909A1 (de) 2019-02-15 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Laserdiode und Verfahren für deren Herrstellung
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