JP2008091728A - 半導体基板の製造方法及び半導体基板 - Google Patents
半導体基板の製造方法及び半導体基板 Download PDFInfo
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Abstract
【解決手段】本発明の第1側面に係る半導体基板の製造方法は、下地基板の上にクロム層を7nm以上45nm未満の平均層厚で成膜するクロム層成膜工程と、前記クロム層を1000℃以上の温度で窒化してクロム窒化物膜にする窒化工程とを備えたことを特徴とする。
【選択図】図13
Description
李旭鉉、外7名、「MBE法による低温CrxNバッファ層を用いたGaNの成長」、応用物理学会予稿集、364ペ−ジ
20 Cr層
30,130 クロム窒化物膜
40,140 バッファ層
50,150 結晶層
Claims (7)
- 下地基板の上にクロム層を7nm以上45nm未満の平均層厚で成膜するクロム層成膜工程と、
前記クロム層を1000℃以上の温度で窒化してクロム窒化物膜にする窒化工程と、
を備えたことを特徴とする半導体基板の製造方法。 - 下地基板の上にクロム層を7nm以上45nm未満の平均層厚で成膜するクロム層成膜工程と、
前記クロム層を1000℃以上の温度で窒化してクロム窒化物膜にする窒化工程と、
前記クロム窒化物膜の上にIII族窒化物半導体の結晶層を成長させる結晶層成長工程と、
を備えたことを特徴とする半導体基板の製造方法。 - 前記クロム層成膜工程では、前記下地基板における六方晶系及び擬似六方晶系のいずれかの(0001)面もしくは立方晶の(111)面の上に、前記クロム層を成膜する
ことを特徴とする請求項1又は2に記載の半導体基板の製造方法。 - 前記クロム層成膜工程では、前記クロム層を10nm以上40nm以下の平均層厚で成膜する
ことを特徴とする請求項1から3のいずれか1項に記載の半導体基板の製造方法。 - 前記クロム窒化物膜をエッチングして前記III族窒化物半導体の結晶を前記下地基板から分離する分離工程をさらに備えた
ことを特徴とする請求項1から4のいずれか1項に記載の半導体基板の製造方法。 - 下地基板と、
前記下地基板の上に形成された平均膜厚10nm以上68nm未満のクロム窒化物膜と、
前記クロム窒化物膜の上にIII族窒化物半導体で形成された結晶層と、
を備えたことを特徴とする半導体基板。 - 前記クロム窒化物膜の平均膜厚は、15nm以上60nm未満である
ことを特徴とする請求項6に記載の半導体基板。
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JP4236121B2 JP4236121B2 (ja) | 2009-03-11 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010074346A1 (ja) | 2008-12-26 | 2010-07-01 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
WO2010110489A1 (ja) | 2009-03-27 | 2010-09-30 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
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2006
- 2006-10-03 JP JP2006272322A patent/JP4236121B2/ja not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010074346A1 (ja) | 2008-12-26 | 2010-07-01 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
KR101358541B1 (ko) | 2008-12-26 | 2014-02-05 | 도와 일렉트로닉스 가부시키가이샤 | Ⅲ족질화물 반도체 성장용 기판, ⅲ족질화물 반도체 에피택셜 기판, ⅲ족질화물 반도체소자 및 ⅲ족질화물 반도체 자립 기판, 및, 이들의 제조 방법 |
US8736025B2 (en) | 2008-12-26 | 2014-05-27 | Dowa Electroncs Materials Co., Ltd. | III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity |
WO2010110489A1 (ja) | 2009-03-27 | 2010-09-30 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
KR101321654B1 (ko) | 2009-03-27 | 2013-10-23 | 도와 일렉트로닉스 가부시키가이샤 | Ⅲ족 질화물 반도체 성장용 기판, ⅲ족 질화물 반도체 에피택셜 기판, ⅲ족 질화물 반도체 소자 및 ⅲ족 질화물 반도체 자립 기판, 및 이들의 제조 방법 |
US8878189B2 (en) | 2009-03-27 | 2014-11-04 | Dowa Holdings Co., Ltd. | Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same |
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