JP2008066297A - Lighting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lighting device with a simple structure, without causing unevenness or rings in color or luminance on an irradiating face, and excellent in uniformity of light emission and color rendering properties. <P>SOLUTION: The lighting device has a solid light-emitting element module 10 and a phosphor module 20 bonded to the solid light-emitting element module 10. The solid light-emitting element module 10 is provided with a plurality of solid light-emitting elements 12. The phosphor module 20 is provided with a plurality of phosphor-containing sections 22 corresponding to the solid light-emitting elements 12, respectively. Thus, a light-emitting section is configured by integrally arranging a plurality of emission light sources having the solid light-emitting elements 12 and the phosphor-containing sections 22. An illuminance of synthesized light at a position separated by 30cm in a vertical direction from the light-emitting surface of the light-emitting section is 150 lux or more. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an illumination device that emits combined light. Specifically, the present invention relates to an illuminating device in which a plurality of light emitting light sources each having a light emitting element and a phosphor are integrated to emit combined light of primary light from each light emitting light source.

  Conventionally, various types of white lighting devices such as fluorescent lamps have been used, but in recent years, inorganic EL (Electro Luminescence), organic EL (OEL (Organic Electro Luminescence) and OLED (Organic Light Emitting Diode)) have been used. In addition, new light sources such as semiconductor light emitting elements have been developed, and lighting devices using these are also being developed. For example, in an illumination device such as an LED lamp using a semiconductor light emitting element, a phosphor is applied to the surface of the semiconductor light emitting element, or a phosphor powder is contained in a resin constituting the LED lamp, thereby providing a semiconductor. A light emitting color other than the original light emitting color of the light emitting element, such as one that obtains white light, has been put into practical use. In such an illuminating device, it is common to use a GaN-based semiconductor light emitting element that emits blue light having a center wavelength of about 460 nm. That is, a phosphor-containing layer containing a yellow-emitting cerium-activated yttrium aluminate (YAG) phosphor is provided on the surface of a blue-emitting GaN-based semiconductor light-emitting device, and light from the semiconductor light-emitting device is supplied to the phosphor-containing layer. To obtain white light.

  In the illumination device using such a semiconductor light emitting element, a part of blue that is excitation light is transmitted through the phosphor-containing layer, so that the central portion of the irradiated surface is blue, and the surrounding area is yellow. There has been a problem that unevenness of color occurs on the irradiated surface, such as a ring, and a uniform white color is not obtained.

  In order to solve this problem, in Patent Document 1 and Patent Document 2, a method of providing a lens having a central emission surface of a convex lens shape that emits emitted light to the outside, or a light shielding member that cuts the peripheral portion of the emitted light is provided. Such a method has been proposed.

  In Patent Document 3, a first phosphor including a blue light emitting phosphor that absorbs ultraviolet light and emits blue light on the LED chip using a semiconductor light emitting element (LED chip) that emits ultraviolet light. There has been proposed a method of forming a second phosphor layer including a layer and a yellow-orange phosphor that absorbs blue light and emits yellow-orange light thereon.

JP 2005-216682 A JP-A-2005-243608 JP 2000-183408 A

  However, the methods disclosed in Patent Documents 1 and 2 complicate the configuration of the illumination device, such as separately providing a lens having a specific structure and a light shielding member. Moreover, in the method of the said patent document 3, since a red component is insufficient, the color rendering property of an irradiation surface is low.

  The present invention has been made in view of the above problems, does not use a special optical member such as a lens having a specific structure or a light-shielding member, has a simple structure, and has unevenness and rings in color and brightness on the irradiation surface. An object of the present invention is to provide an illuminating device that has excellent light emission uniformity and excellent color rendering.

  The present invention solves the above-mentioned problems and has the following gist.

  [1] An illuminating device including a light emitting unit in which a plurality of types of light emitting light sources that emit primary light of different wavelengths are integrated and arranged, wherein the light emitting light source includes a solid light emitting element and a phosphor, An illumination device characterized in that the illuminance of the combined light at a position 30 cm away from the surface in the vertical direction is 150 lux or more.

  [2] The illumination device according to [1], wherein the color of the combined light observed at a position at least 10 cm away from the light emitting surface of the light emitting unit in the vertical direction is white.

[3] The area of the light emitting portion of the light emitting light source is 0.1 mm ^{2 to} 100 mm ² , and a first wavelength range from 430 nm to less than 500 nm from the light emitting light source, 500 nm to 580
Light having an emission peak wavelength is emitted in a second wavelength range of less than nm and a third wavelength range of not less than 580 nm and not more than 700 nm, and the energy ratio of the light emitting part of the light emitting light source is in the first wavelength range. E _{1 is} the energy of light having an emission peak wavelength, E _{2 is} the energy of light having an emission peak wavelength in the _second wavelength range, and E ₃ is the energy of light having an emission peak wavelength in the third wavelength range. The lighting device according to [1] or [2], wherein E ₁ : E ₂ : E ₃ = 5 to 90: 5 to 90: 5 to 90.

  [4] The illumination device according to [3], further including a control device that controls a driving condition of the light emitting light source for each of the first to third wavelength ranges.

  [5] The light-emitting light source according to any one of [1] to [4], wherein the light-emitting light source includes a solid-state light-emitting element module obtained by modularizing the solid-state light-emitting element and a phosphor module obtained by modularizing the phosphor. Lighting equipment.

  [6] The illumination device according to [5], wherein the solid light emitting element module includes a base and a solid light emitting element disposed on the base.

  [7] The illumination device according to [5] or [6], wherein the phosphor module includes a base and a phosphor-containing portion that is disposed on the base and contains the phosphor.

  [8] The solid-state light-emitting element module includes a plurality of the solid-state light-emitting elements, and the phosphor module contains phosphors at positions corresponding to the plurality of solid-state light-emitting elements, The lighting device according to any one of [5] to [7], wherein the phosphor module is joined to form a light emitting unit in which the plurality of types of light emitting light sources are integrated and arranged.

  According to the present invention, it is possible to provide an illuminating device that has a simple structure, is excellent in light emission uniformity, and has excellent color rendering properties without causing unevenness and rings in color and brightness on the irradiated surface.

  Hereinafter, although each element of this invention is demonstrated in detail, this invention is not limited to the following description, It can implement in various changes within the range of the summary.

  The illuminating device of the present invention is an illuminating device including a light emitting unit in which a plurality of types of light emitting light sources each emitting primary light having different wavelengths are integrated, the light emitting light source including a solid light emitting element and a phosphor, It is characterized in that the illuminance of the combined light at a position 30 cm away in the vertical direction from the light emitting surface of the light emitting unit is 150 lux or more.

  Hereinafter, each component requirement is explained in full detail.

[1] Light-emitting light source The light-emitting light source used in the illumination device of the present invention has the significance of emitting primary light that is a component of the combined light of the illumination device of the present invention.

  The light-emitting light source used in the present invention is characterized by containing a solid light-emitting element and a phosphor, and may contain other optional components as necessary.

  Specific examples of the light emission source include an LED lamp using a semiconductor light emitting element.

  Hereafter, the component of the light emission light source used for this invention is explained in full detail.

[1-1] Solid-state light-emitting device The solid-state light-emitting device used in the present invention emits light that excites a phosphor described in [1-2], which will be described later. The light emission wavelength of the solid light emitting device is not particularly limited as long as it overlaps with the absorption wavelength of the phosphor, and a light emitting device having a wide light emission wavelength region can be used.

  Although the kind of solid light emitting element used for the illuminating device of this invention does not have limitation in particular, For example, a semiconductor light emitting element, inorganic EL, organic EL etc. can be mentioned. Among these, it is preferable to use a semiconductor light emitting element from the viewpoints of long life, energy saving, low calorific value, high speed response, impact resistance, small size, light weight, and environmental resistance.

  Specifically, a light emitting diode (LED), a semiconductor laser diode (LD), or the like can be used as the semiconductor light emitting element. The emission peak wavelength of a semiconductor light-emitting element is an important factor related to the excitation efficiency of the phosphor, and in turn, the conversion efficiency of the phosphor's excitation light to fluorescence, and usually emits light from the near ultraviolet region to the blue region. A light emitting element having a wavelength is used, and a specific numerical value is usually a light emitting element having a peak emission wavelength of 300 nm or more, preferably 330 nm or more, and usually 500 nm or less, preferably 480 nm or less.

Of these, GaN LEDs and LDs using GaN compound semiconductors are preferred. This is because GaN-based LEDs and LDs have much higher light output and external quantum efficiency than SiC-based LEDs that emit light in this region, and are extremely low power and extremely low power when combined with phosphors described later. This is because bright light emission can be obtained. For example, for the same current load, a GaN-based LED or LD usually has a light emission intensity 100 times or more that of a SiC-based. GaN-based LEDs and LDs preferably have an Al _x Ga _y N light emitting layer, a GaN light emitting layer, or an In _x Ga _y N light emitting layer. Among GaN-based LEDs, those having an In _x Ga _y N light-emitting layer are particularly preferable because the emission intensity is very strong, and in GaN-based LDs, multiple layers of In _x Ga _y N layers and GaN layers are preferred. The quantum well structure is particularly preferable because the emission intensity is very strong.

  In the above, the value of x + y is usually in the range of 0.8 to 1.2. In the GaN-based LED, those in which the light emitting layer is doped with Zn or Si or those without a dopant are preferable for adjusting the light emission characteristics.

A GaN-based LED has these light emitting layer, p layer, n layer, electrode, and substrate as basic components, and the light emitting layer is made of n-type and p-type Al _x Ga _y N layers, GaN layers, or In _x. Those having a hetero structure sandwiched with a Ga _y N layer or the like have high luminous efficiency, and those having a hetero structure having a quantum well structure have higher luminous efficiency and are more preferable.

  Examples of the growth method of the GaN-based crystal layer for forming the GaN-based semiconductor light emitting device include the HVPE method, the MOVPE method, and the MBE method. When forming a thick film, the HVPE method is preferable, but when forming a thin film, the MOVPE method or the MBE method is preferable.

[1-2] Phosphor The phosphor used in the lighting device of the present invention is excited by the light emission from the solid light-emitting element described in [1-1], and converts the light from the solid light-emitting element to light of a different wavelength. To convert.

  When the light converted by the phosphor is used as a light emitting light source, the primary light is mixed at a short distance from the light emitting light source regardless of the package shape, and white combined light can be realized.

Although there is no restriction | limiting in particular in the composition of this fluorescent substance, Since the oxide fluorescent substance or nitride fluorescent substance is chemically stable, since the lifetime of a semiconductor light-emitting device and an illuminating device becomes long, it is preferable. Among these, metal oxides typified by Y ₂ O ₃ , Zn ₂ SiO _{4 and the} like which are crystal bases, metal nitrides typified by Sr ₂ Si ₅ N ₈ , and Ca ₅ (PO ₄ ) ₃ Cl are typical. And phosphates represented by ZnS, SrS, CaS, and the like, ions of rare earth metals such as Ce, Pr, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, A combination of metal ions such as Ag, Cu, Au, Al, Mn, and Sb as an activator element or a coactivator element is preferable.

Preferred examples of the crystal matrix include sulfides such as (Zn, Cd) S, SrGa ₂ S ₄ , SrS, and ZnS, oxysulfides such as Y ₂ O ₂ S, and (Y, Gd) ₃ Al ₅ O. ₁₂ , YAlO ₃ , BaMgAl ₁₀ O ₁₇ , (Ba, Sr) (Mg, Mn) Al ₁₀ O ₁₇ , (Ba, Sr, C
a) (Mg, Zn, Mn) Al ₁₀ O ₁₇ , BaAl ₁₂ O ₁₉ , CeMgAl ₁₁ O ₁₉
, (Ba, Sr, Mg) O.Al ₂ O ₃ , BaAl ₂ Si ₂ O ₈ , SrAl ₂ O ₄ , Sr ₄ Al ₁₄ O ₂₅ , Y ₃ Al ₅ O _12, etc., aluminates such as Y ₂ SiO ₅ Silicate such as Zn ₂ SiO ₄ , oxide such as SnO ₂ and Y ₂ O ₃ , borate such as GdMgB ₅ O ₁₀ and (Y, Gd) BO ₃ , Ca ₁₀ (PO ₄ ) ₆ (F, Cl ) ₂ , halophosphates such as (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ , phosphates such as Sr ₂ P ₂ O ₇ , (La, Ce) PO _4, etc. it can.

  However, the crystal matrix and the activator element or coactivator element are not particularly limited in element composition, and can be partially replaced with elements of the same family, and the obtained phosphor is light in the near ultraviolet to visible region. Any material that absorbs and emits visible light can be used.

Specifically, the following phosphors can be used, but these are merely examples, and phosphors that can be used in the present invention are not limited to these. In the following examples, phosphors that differ only in part of the structure are omitted as appropriate. For example, “Y ₂ SiO ₅ : Ce ³⁺ ”, “Y ₂ SiO ₅ : Tb ³⁺ ” and “Y ₂ SiO ₅ : Ce ³⁺ , Tb ³⁺ ” are changed to “Y ₂ SiO ₅ : Ce ³⁺ , Tb ³⁺ ”, “ “La ₂ O ₂ S: Eu”, “Y ₂ O ₂ S: Eu” and “(La, Y) ₂ O ₂ S: Eu” are collectively shown as “(La, Y) ₂ O ₂ S: Eu”. ing. Omitted parts are shown separated by commas (,). The total of the elements in () is 1 mol.

  The fluorescent color of the phosphor used in the present invention can be selected from various colors according to the purpose of the lighting device of the present invention. Specifically, those listed below can be used.

[1-2-1] Orange to red phosphors A substrate phosphor that emits orange to red fluorescence (hereinafter, a substrate phosphor that emits orange fluorescence is referred to as an "orange phosphor", and a substrate fluorescence that emits red fluorescence) The body is referred to as “red phosphor”, and the base phosphor that emits orange or red fluorescence is referred to as “orange to red phosphor”).

  Illustrating the specific wavelength range of the fluorescence emitted by the red phosphor suitable for the present invention, the main emission peak wavelength is usually 570 nm or more, preferably 580 nm or more, particularly preferably 610 nm or more, and usually 700 nm or less. Preferably it is 680 nm or less, Especially preferably, it is 660 nm or less.

  The half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 120 nm or less, preferably 110 nm or less, particularly preferably 100 nm or less.

  If the main emission peak wavelength is too long, the luminosity of the illuminating device may decrease (become dark) because the visibility is lowered, and if it is too short, the color rendering property when the illuminating device is used may be decreased. . Moreover, when the half width of the main light emission peak is out of the above range, the color rendering property when the lighting device is used may be lowered.

Examples of the orange to red phosphor include europium activation represented by (Mg, Ca, Sr, Ba) ₂ Si ₅ N ₈ : Eu that is composed of fractured particles having a red fracture surface and emits light in the red region. The alkaline earth silicon nitride phosphor is composed of growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in the red region (Y, La, Gd, L
u) Europium activated rare earth oxychalcogenide phosphor represented by ₂ O ₂ S: Eu.

  Furthermore, the oxynitride and / or acid containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W, and Mo described in JP-A-2004-300247 A phosphor containing a sulfide and containing an oxynitride having an alpha sialon structure in which a part or all of the Al element is substituted with a Ga element can also be used in this embodiment. These are phosphors containing oxynitride and / or oxysulfide.

In addition, examples of red phosphors include Eu-activated oxysulfide phosphors such as (La, Y) ₂ O ₂ S: Eu, Y (V, P) O ₄ : Eu, Y ₂ O ₃ : Eu, and the like. Eu-activated oxide phosphor, (Ba, Sr, Ca, Mg) 2 SiO 4: Eu, Mn, (Ba, Mg) 2 SiO 4: Eu, Eu such as Mn, Mn-activated silicate phosphor, (Ca, Sr) S: Eu-activated sulfide phosphors such as Eu, YAlO ₃ : Eu-activated aluminate phosphors such as Eu, LiY ₉ (SiO ₄ ) ₆ O ₂ : Eu, Ca ₂ Y ₈ ( SiO ₄ ) ₆ O ₂ : Eu, (Sr, Ba, Ca) ₃ SiO ₅ : Eu, Sr ₂ BaSiO ₅ : Eu-activated silicate phosphor such as Eu, (Y, Gd) ₃ Al ₅ O ₁₂ : Ce _{, (Tb, Gd) 3 Al} 5 O 12: Ce -activated aluminate phosphor such as Ce, (Ca, Sr, Ba ) 2 Si 5 _{8: Eu, (Mg, Ca} , Sr, Ba) SiN 2: Eu, (Mg, Ca, Sr, Ba) AlSiN 3: Eu -activated nitride phosphor such as Eu, (Mg, Ca, Sr , Ba) AlSiN ₃ : Ce-activated nitride phosphor such as Ce, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, Mn-activated halophosphate phosphor such as Eu and Mn, Ba ₃ MgSi ₂ O ₈ : Eu, Mn, (Ba, Sr, Ca, Mg) ₃ (Zn, Mg) Si ₂ O ₈ : Eu, Mn-activated silicate phosphor such as Eu, Mn, 3.5MgO · 0. 5MgF ₂ · GeO ₂ : Mn-activated germanate phosphor such as Mn, Eu-activated oxynitride phosphor such as Eu-activated α-sialon, (Gd, Y, Lu, La) ₂ O ₃ : Eu, Bi Eu, Bi activated oxide phosphors such as (Gd, Y, Lu, La) ₂ O ₂ S: Eu, Bi, etc. Eu, Bi-activated oxysulfide phosphor, (Gd, Y, Lu, La) VO ₄ : Eu, Bi-activated vanadate phosphor, etc., SrY ₂ S ₄ : Eu, Ce, etc. Eu, Ce activated sulfide phosphor, Ce activated sulfide phosphor such as CaLa ₂ S ₄ : Ce, (Ba, Sr, Ca) MgP ₂ O ₇ : Eu, Mn, (Sr, Ca, Ba, Mg) , Zn) ₂ P ₂ O ₇ : Eu, Mn activated phosphor phosphor such as Eu, Mn, (Y, Lu) ₂ WO ₆ : Eu, Mo activated tungstate phosphor such as Eu, Mo, (Ba, Sr, Ca) _x Si _y N _z : Eu, Ce activated nitride phosphor such as Eu, Ce (where x, y, z are integers of 1 or more), (Ca, Sr, Ba, _{mg) 10 (PO 4) 6} (F, Cl, Br, OH) 2: Eu, Eu such as Mn, Mn-activated halophosphate phosphor, ((Y, Lu Gd, Tb) it can also be used such as _{1-x Sc x Ce y)} 2 (Ca, Mg) 1-r (Mg, Zn) 2 + r Si z-q GeqO Ce -activated silicate phosphors _{12 + [delta],} etc. .

As the red phosphor, β-diketonate, β-diketone, aromatic carboxylic acid, or a red organic phosphor composed of a rare earth element ion complex having an anion such as Bronsted acid as a ligand, a perylene pigment (for example, Dibenzo {[f, f ′]-4,4 ′, 7,7′-tetraphenyl} diindeno [1,2,3-cd: 1 ′, 2 ′, 3′-lm] perylene), anthraquinone pigment, Lake pigments, azo pigments, quinacridone pigments, anthracene pigments, isoindoline pigments, isoindolinone pigments, phthalocyanine pigments, triphenylmethane basic dyes, indanthrone pigments, indophenol pigments, It is also possible to use a cyanine pigment or a dioxazine pigment.

Of the red phosphors, those having a peak wavelength in the range of 580 nm or more, preferably 590 nm or more, and 620 nm or less, preferably 610 nm or less can be suitably used as the orange phosphor. Examples of such orange phosphors include (Sr, Ba) ₃ SiO ₅ : Eu, (Sr, Mg) ₃ (PO ₄ ) ₂ : Sn, Eu-activated oxynitride fluorescence such as Eu-activated sialon. Examples include the body.

[1-2-2] Green phosphor The base phosphor that emits green fluorescence (hereinafter, referred to as “green phosphor” as appropriate) includes the following.

  Illustrating the specific wavelength range of the fluorescence emitted by the green phosphor suitable for the present invention, the main emission peak wavelength is usually 500 nm or more, preferably 510 nm or more, particularly preferably 520 nm or more, and usually 580 nm or less, Preferably it is 570 nm or less, Especially preferably, it is 560 nm or less.

  Further, the half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 120 nm or less, preferably 90 nm or less, particularly preferably 60 nm or less.

  If the main emission peak wavelength is too short than the above range, the illuminance of the lighting device may be lowered (darken) because the visibility is lowered, and if it is too long, the color rendering property of the lighting device is lowered. There is a fear.

  Moreover, when the half width of the main light emission peak is out of the above range, the color rendering property when the lighting device is used may be lowered.

As such a green phosphor, for example, europium activation represented by (Mg, Ca, Sr, Ba) Si ₂ O ₂ N ₂ : Eu that is composed of fractured particles having a fracture surface and emits light in the green region. An alkaline earth silicon oxynitride phosphor, composed of fractured particles having a fracture surface, emits green light (Ba, Ca, Sr, Mg) ₂ SiO ₄ : europium activated alkaline earth expressed by Eu Silicate phosphors and the like.

In addition, as the green phosphor, Eu-activated aluminate phosphor such as Sr ₄ Al ₁₄ O ₂₅ : Eu, (Ba, Sr, Ca) Al ₂ O ₄ : Eu, (Sr, Ba) Al ₂ Si ₂ O ₈ : Eu, (Ba, Mg) ₂ SiO ₄ : Eu, (Ba, Sr, Ca, Mg) ₂ SiO ₄ : Eu, (Ba, Sr, Ca) ₂ (Mg, Zn) Si ₂ O ₇ : Eu activated silicate phosphor such as Eu, Y ₂ SiO ₅ : Ce, Tb activated silicate phosphor such as Ce, Tb, Sr ₂ P ₂ O ₇ —Sr ₂ B ₂ O ₅ : Eu such as Eu Activated boric acid phosphor, Sr ₂ Si ₃ O ₈ -2SrCl ₂ : Eu activated halosilicate phosphor such as Eu, Zn ₂ SiO ₄ : Mn activated silicate phosphor such as Mn, CeMgAl ₁₁ O _{19: Tb, Y 3 Al 5} O 12: Tb -activated aluminate Sanshiohotaru of Tb such _{Body, Ca 2 Y 8 (SiO 4} ) 6 O 2: Tb, La 3 Ga 5 SiO 14: Tb -activated silicate phosphors such as Tb, (Sr, Ba, Ca ) Ga 2 S 4: Eu, Tb, Eu, Tb, Sm activated thiogallate phosphors such as Sm, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce, (Y, Ga, Tb, La, Sm, Pr, Lu) ₃ (Al, Ga) ₅ O ₁₂ : Ce-activated aluminate phosphor such as Ce, Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce, Ca ₃ (Sc, Mg, Na, Li) ₂ Si ₃ O ₁₂ : Ce-activated silicate such as Ce Phosphor, Ce activated oxide phosphor such as CaSc ₂ O ₄ : Ce, SrSi ₂ O ₂ N ₂ : Eu, (Sr, Ba, Ca) Si ₂ O ₂ N ₂ : Eu, Eu activated β sialon, etc. Eu Tsukekatsusan nitride _{phosphor, BaMgAl 10 O 17: Eu,} Eu such as Mn Mn-activated aluminate phosphor, SrAl ₂ O _4: Eu-activated aluminate phosphor such as Eu, (La, Gd, Y ) 2 O 2 S: Tb Tsukekatsusan sulfide phosphor such as Tb, LaPO ₄ : Ce, Tb activated phosphate phosphor such as Ce, Tb, sulfide phosphor such as ZnS: Cu, Al, ZnS: Cu, Au, Al, (Y, Ga, Lu, Sc, La) BO ₃ : Ce, Tb, Na ₂ Gd ₂ B ₂ O ₇ : Ce, Tb, (Ba, Sr) ₂ (Ca, Mg, Zn) B ₂ O ₆ : Ce, Tb activation such as K, Ce, Tb Borate phosphor, Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu, Mn activated halosilicate phosphor such as Eu, Mn, (Sr, Ca, Ba) (Al, Ga, In) ₂ S ₄ : Eu-activated thioaluminate phosphors such as Eu and thiogallate phosphors, (Ca, Sr) ₈ (Mg, Zn) (SiO ₄ ) ₄ It is also possible to use Eu, Mn activated halosilicate phosphors such as Cl ₂ : Eu, Mn.

  In addition, as the green phosphor, it is also possible to use a pyridine-phthalimide condensed derivative, a benzoxazinone-based, a quinazolinone-based, a coumarin-based, a quinophthalone-based, a nartaric imide-based fluorescent dye, or an organic phosphor such as a terbium complex. is there.

[1-2-3] Blue Phosphor The base phosphor that emits blue fluorescence (hereinafter, referred to as “blue phosphor” as appropriate) includes the following.

  Illustrating the specific wavelength range of the fluorescence emitted by the blue phosphor suitable for the present invention, the main emission peak wavelength is usually 430 nm or more, preferably 440 nm or more, and usually 500 nm or less, preferably 480 nm or less, particularly Preferably it is 460 nm or less.

  Further, the half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 100 nm or less, preferably 80 nm or less, particularly preferably 70 nm or less.

  If the main emission peak wavelength is too short, the visibility decreases, so the illuminance of the lighting device may decrease (become dark), and if it is too long, the color rendering properties of the lighting device may decrease. There is.

  Moreover, when the half width of the main light emission peak is out of the above range, the color rendering property when the lighting device is used may be lowered.

As such a blue phosphor, europium-activated barium magnesium aluminate represented by BaMgAl ₁₀ O ₁₇ : Eu, which is composed of growing particles having a substantially hexagonal shape as a regular crystal growth shape and emits light in a blue region. System phosphor, composed of growing particles having a nearly spherical shape as a regular crystal growth shape, and emits light in the blue region, with europium represented by (Ca, Sr, Ba) ₅ (PO ₄ ) ₃ Cl: Eu An active calcium halophosphate phosphor is composed of growing particles having a substantially cubic shape as a regular crystal growth shape, and emits light in a blue region (Ca, Sr, Ba) ₂ B ₅ O ₉ Cl: represented by Eu Europium-activated alkaline earth chloroborate phosphor, composed of fractured particles having a fracture surface, and emits light in the blue-green region (Sr _{Ca, Ba) Al 2 O 4} : Eu or _{(Sr, Ca, Ba) 4} Al 14 O 25: activated alkaline earth with europium aluminate-based phosphor such as represented by the Eu and the like.

In addition, as the blue phosphor, Sn-activated phosphate phosphors such as Sr ₂ P ₂ O ₇ : Sn, Sr ₄ Al ₁₄ O ₂₅ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, BaAl ₈ O ₁₃ : Eu-activated aluminate phosphors such as Eu, Ce-activated thiogallate phosphors such as SrGa ₂ S ₄ : Ce, CaGa ₂ S ₄ : Ce, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, BaMgAl ₁₀ O ₁₇ : Eu activated aluminate phosphor such as Eu, Tb, Sm, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, Mn activated aluminate phosphor such as Eu, Mn, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, (Ba, Sr, Ca) ₅ (PO ₄ ) ₃ (Cl, F, Br, OH): Eu activation such as Eu, Mn, Sb halophosphate phosphor, BaAl _{Si 2 O 8: Eu, (} Sr, Ba) 3 MgSi 2 O 8: Eu -activated silicate phosphors such as _{Eu, Sr 2 P 2 O 7} : Eu -activated phosphate phosphor such as Eu, ZnS: Sulfide phosphors such as Ag, ZnS: Ag, Al, etc. Y ₂ SiO ₅ : Ce-activated silicate phosphors such as Ce, tungstate phosphors such as CaWO ₄ , (Ba, Sr, Ca) BPO ₅ : Eu, Mn, (Sr, Ca ) 10 (PO 4) 6 · nB 2 O 3: Eu, 2SrO · 0.84P 2 O 5 · 0.16B 2 O 3: Eu such as Eu, Mn-activated borate phosphate It is also possible to use a salt phosphor, an Eu-activated halosilicate phosphor such as Sr ₂ Si ₃ O ₈ .2SrCl ₂ : Eu, or the like.

  In addition, as the blue phosphor, for example, naphthalic acid imide-based, benzoxazole-based, styryl-based, coumarin-based, pyrazoline-based, triazole-based compound fluorescent dyes, thulium complexes and other organic phosphors can be used. .

  In addition, the above-mentioned fluorescent substance may be used individually by 1 type, and may use 2 or more types together by arbitrary combinations and ratios.

[1-2-4] Yellow Phosphor The phosphor that emits yellow fluorescence (hereinafter, appropriately referred to as “yellow phosphor”) includes the following.

  Illustrating the specific wavelength range of the fluorescence emitted by the yellow phosphor, it is usually 530 nm or more, preferably 540 nm or more, more preferably 550 nm or more, and usually 620 nm or less, preferably 600 nm or less, more preferably 580 nm or less. It is preferable to be in the range.

  If the emission peak wavelength of the yellow phosphor is too short, there is a possibility that the yellow component is reduced and the lighting device is poor in color rendering, and if it is too long, the luminance of the lighting device may be reduced.

  Examples of such yellow phosphors include various oxide-based, nitride-based, oxynitride-based, sulfide-based, and oxysulfide-based phosphors.

In particular, RE ₃ M ₅ O ₁₂ : Ce (where RE represents at least one element of Y, Tb, Gd, Lu, and Sm, and M represents at least one element of Al, Ga, and Sc) . representing) and ^{_{M 2 3 M 3 2 M 4}} 3 O 12: Ce ( here, ^{M 2} is a divalent metal element, ^{M 3} is a trivalent metal element, ^{M 4} is a tetravalent metal element), etc. Garnet-based phosphor having a garnet structure represented, AE ₂ M ⁵ O ₄ : Eu (where AE represents at least one element of Ba, Sr, Ca, Mg, Zn, and M ⁵ represents Si , Ge represents at least one element)), etc., oxynitride phosphors obtained by substituting part of oxygen of the constituent elements of the phosphors with nitrogen, AEAlSiN _3: Ce (here, AE is, Ba, Sr, Ca, Mg , Z At least one element representative of a.) Fluorescent material activated with Ce, such as nitride-based phosphor having a CaAlSiN ₃ structure, such as the like.

In addition, examples of yellow phosphors include sulfide phosphors such as CaGa ₂ S ₄ : Eu (Ca, Sr) Ga ₂ S ₄ : Eu, (Ca, Sr) (Ga, Al) ₂ S ₄ : Eu. It is also possible to use a phosphor activated with Eu such as an oxynitride phosphor having a SiAlON structure such as Cax (Si, Al) ₁₂ (O, N) ₁₆ : Eu.

  The phosphors described in the above-mentioned items [1-2-1] to [1-2-4] are used in appropriate combination according to a desired emission spectrum, color temperature, chromaticity coordinates, color rendering properties, luminous efficiency, and the like. Also good. By appropriately combining specific phosphors, not only a white system (daylight color to daylight white to white to warm white to light bulb color) but also pastel color and monochromatic light can be realized.

[1-2-5] Other Physical Properties of Phosphor The particle size of the phosphor used in the present invention is not particularly limited, but the median particle size (D ₅₀ ) is usually 0.1 μm or more, preferably 2 μm or more. Preferably it is 10 micrometers or more. Moreover, it is 100 micrometers or less normally, Preferably it is 50 micrometers or less, More preferably, it is 20 micrometers or less.

When the median particle diameter (D ₅₀ ) of the phosphor is in the above range, light emitted from the semiconductor light emitting element is sufficiently scattered. Further, since light emitted from the semiconductor light emitting element is sufficiently absorbed by the phosphor particles, wavelength conversion is performed with high efficiency, and light emitted from the phosphor is irradiated in all directions. As a result, primary light from a plurality of types of phosphors can be mixed to make white, and a uniform white can be obtained. Therefore, in the combined light emitted by the illumination device of the present invention, uniform white light and illuminance are obtained. can get.

When the median particle diameter (D ₅₀ ) of the phosphor is larger than the above range, the phosphor cannot sufficiently fill the space of the light emitting part, and thus the light from the light emitting element may not be sufficiently absorbed by the phosphor. is there. The central particle size of the phosphor (D ₅₀₎ is smaller than the above range, to lower the luminous efficiency of the phosphor, the illuminance of the illumination device of the present invention may be decreased.

  For example, the particle size distribution (QD) of the phosphor particles is preferably smaller in order to align the dispersed state of the particles in the phosphor-containing portion described later, but in order to reduce the particle size, the classification yield is lowered and the cost is increased. Since it connects, it is 0.03 or more normally, Preferably it is 0.05 or more, More preferably, it is 0.07 or more. Moreover, it is 0.4 or less normally, Preferably it is 0.3 or less, More preferably, it is 0.2 or less. Further, the shape of the phosphor particles is not particularly limited as long as the phosphor part formation is not affected.

In the present invention, the median particle size (D ₅₀ ) and particle size distribution (QD) of the phosphor can be obtained from a weight-based particle size distribution curve. The weight-based particle size distribution curve is obtained by measuring the particle size distribution by a laser diffraction / scattering method, and specifically, for example, can be measured as follows.

  The phosphor is dispersed in a solvent such as ethylene glycol in an environment of a temperature of 25 ° C. and a humidity of 70%.

  Measurement is performed in a particle size range of 0.1 μm to 600 μm using a laser diffraction particle size distribution measuring device (“LA-300” manufactured by Horiba, Ltd.).

Integrated value in the weight particle size distribution curve is denoted a particle size value when the 50% and median particle diameter D _50. Further, the particle size values when the integrated values are 25% and 75% are expressed as D ₂₅ and D ₇₅ , respectively, and defined as QD = (D ₇₅ −D ₂₅ ) / (D ₇₅ + D ₂₅ ). A small QD means a narrow particle size distribution.

[1-2-6] Surface treatment of phosphor The phosphor used in the present invention is a surface treatment for the purpose of enhancing water resistance or preventing unnecessary aggregation of the phosphor in the phosphor-containing portion described later. May be performed.

  Examples of such surface treatments include surface treatments using organic materials, inorganic materials, glass materials, and the like described in JP-A No. 2002-223008, and metal phosphates described in JP-A No. 2000-96045. Known surface treatments such as coating treatment, coating treatment with metal oxide, and silica coating can be used.

Specifically, for example, in order to coat the metal phosphate on the surface of the phosphor, the following procedure can be used.
(1) A predetermined amount of a water-soluble phosphate such as potassium phosphate or sodium phosphate and at least one of alkaline earth metals such as calcium chloride, strontium sulfate, manganese chloride and zinc nitrate, Zn and Mn A water-soluble metal salt compound is added to the phosphor suspension and stirred.
(2) A phosphate of at least one of alkaline earth metals, Zn and Mn is formed in the suspension and the generated metal phosphate is deposited on the phosphor surface.
(3) Remove moisture.

Examples of the silica coating treatment include a method of neutralizing water glass to precipitate SiO ₂ , a method of surface treating a hydrolyzed alkoxysilane (for example, JP-A-3-231987), and the like. In terms of enhancing the dispersibility, a method of surface-treating a hydrolyzed alkoxysilane is preferable.

[1-2-7] Amount of Phosphor Used The amount of these phosphors used in the lighting device of the present invention can be appropriately selected so as to satisfy the characteristics of the lighting device of the present invention. 5% to 90% by weight based on the sum of the total weight, the weight of a transparent resin or the like which will be described later, and the weight of an additive such as a viscosity modifier added as necessary It is preferable. When the phosphor is used in a transmission type, this ratio is preferably as small as 5 to 50% by weight, and when it is used in a reflection type, this ratio is preferably as large as 50 to 90% by weight.

[1-3] Sealing material The light-emitting light source used in the lighting device of the present invention is not particularly limited as long as it includes the above-described solid light-emitting element and phosphor. The solid light-emitting element and the phosphor are usually arranged so that the phosphor is excited by the light emission of the solid light-emitting element to generate light, and this light emission is extracted outside. In the case of having such a structure, the above-described solid light emitting device and phosphor are usually sealed and protected with a sealing material. Specifically, this sealing material is employed for the purpose of dispersing the above-described phosphor to form a light emitting portion, or bonding the light emitting element, the phosphor and the substrate.

  As the sealing material used, a thermoplastic resin, a thermosetting resin, a photocurable resin, and the like are usually used. However, the sealing material is sufficiently transparent to excitation light (peak wavelength: 350 nm to 430 nm) from a solid light emitting device. And durable resins are preferred.

  Specifically, (meth) acrylic resins such as poly (meth) acrylic acid methyl; styrene resins such as polystyrene and styrene-acrylonitrile copolymers; polycarbonate resins; polyester resins; phenoxy resins; butyral resins; Cellulose-based resins such as cellulose acetate and cellulose acetate butyrate; epoxy resins; phenol resins; silicone resins and the like. Further, an inorganic material such as a siloxane bond formed by solidifying a solution obtained by hydrolytic polymerization of a solution containing an inorganic material such as a metal alkoxide, ceramic precursor polymer or metal alkoxide by a sol-gel method, or a combination thereof. The inorganic material and glass which have can also be used.

  Among these, from the viewpoint of heat resistance, ultraviolet resistance (UV) resistance, etc., a solution obtained by hydrolyzing a solution containing a silicone resin, a metal alkoxide, a ceramic precursor polymer, or a metal alkoxide by a sol-gel method, or these An inorganic material obtained by solidifying these combinations, for example, an inorganic material having a siloxane bond is preferable.

Among such sealing materials, in particular, a silicone material or a silicone resin having one or more of the following features (1) to (3) (hereinafter referred to as “silicone material of the present invention”) .) Is preferred.
(1) The solid Si-nuclear magnetic resonance (NMR) spectrum has at least one of the following peaks (i) and / or (ii).

  (I) A peak whose peak top is in the region of chemical shift −40 ppm or more and 0 ppm or less, and whose peak half-value width is 0.3 ppm or more and 3.0 ppm or less.

(Ii) A peak whose peak top is in a region where the chemical shift is −80 ppm or more and less than −40 ppm, and the peak half-value width is 0.3 ppm or more and 5.0 ppm or less.
(2) The silicon content is 20% by weight or more.
(3) The silanol content is 0.01% by weight or more and 10% by weight or less.

  In the present invention, among the above features (1) to (3), a silicone material or a silicone resin having the feature (2) is preferable. More preferably, a silicone material or a silicone resin having the above characteristics (1) and (2) is preferable. Particularly preferably, a silicone material or a silicone resin having all the above features (1) to (3) is preferable.

  Hereinafter, these features (1) to (3) will be described.

[1-3-1] Solid Si-NMR spectrum The compound containing silicon as a main component is represented by the SiO ₂ · nH ₂ O formula, but structurally, each of the tetrahedrons of silicon atoms Si Oxygen atoms O are bonded to the vertices, and silicon atoms Si are further bonded to these oxygen atoms O to form a net-like structure. The schematic diagrams (A) and (B) shown below represent the Si—O net structure, ignoring the tetrahedral structure, but are represented by repeating units of Si—O—Si—O—. In which a part of the oxygen atom O is substituted with another member (for example, —H, —CH _3, etc.), and when attention is paid to one silicon atom Si, as shown in FIG. There are silicon atoms Si (Q ⁴ ) having four —OSi, and silicon atoms Si (Q ³ ) having three —OSi as shown in the schematic diagram (B). Then, in the solid-state Si-NMR measurement, peaks based on each silicon atom Si above is sequentially referred to ^{Q 4} peak, ^{Q 3} peak, and ....

These silicon atoms having four bonded oxygen atoms are generally referred to as Q sites. In the present invention, each peak of Q ^{0 to} Q ⁴ derived from the Q site is referred to as a Q ⁿ peak group. The Q ⁿ peak group of the silica film containing no organic substituent is usually observed as a multimodal peak continuous in the region of chemical shift of −80 to −130 ppm.

In contrast, silicon atoms to which three oxygen atoms are bonded and other atoms (usually carbon) are bonded are generally referred to as T sites. Peak derived from a T site as in the case of Q sites is observed as each peak of T ⁰ through T ^3. In the present invention, each peak derived from the T site is referred to as a ^Tn peak group. The T ⁿ peak group is generally observed as a multimodal peak continuous in the region on the higher magnetic field side (usually −80 to −40 ppm) than the Q ⁿ peak group.

Furthermore, a silicon atom to which two oxygen atoms are bonded and other atoms (usually carbon) are bonded is generally referred to as a D site. Similarly to the peak group derived from the Q site and the T site, the peak derived from the D site is observed as each peak of D ^{0 to} D ⁿ (referred to as a D ⁿ peak group), and the peak of Q ⁿ or T ⁿ is observed. Furthermore, it is observed as a multimodal peak in a region on the high magnetic field side (normally, a region with a chemical shift of 0 to −40 ppm). The ratio of the area of each peak group of D ⁿ , T ⁿ , and Q ⁿ is equal to the molar ratio of silicon atoms placed in the environment corresponding to each peak group. In terms of the molar amount, the total area of the D ⁿ peak group and the T ⁿ peak group usually corresponds to the molar amount of all silicon directly bonded to carbon atoms.

When measuring the solid Si-NMR spectrum of a silicone material of the present invention, the D ⁿ peak group and T ⁿ peak group originating from silicon atoms in which carbon atoms directly bonded organic groups, bonded to a carbon atom of an organic group Q ⁿ peaks derived from non-silicon atoms appear in different regions. Among these peaks, a peak of less than −80 ppm corresponds to the Q ⁿ peak as described above, and a peak of −80 ppm or more corresponds to the D ⁿ and T ⁿ peaks. In the silicone material of the present invention, the Q ⁿ peak is not essential, but at least one, preferably a plurality of peaks are observed in the D ⁿ and T ⁿ peak regions.

  In the silicone material of the present invention, the half width of the peak observed in the region of −80 ppm or more is smaller (narrow) than the half width range of the silicone material known so far by the sol-gel method. Features.

When organized by chemical shifts, in a silicone material of the present invention, the half width of ^{T n} peak group the position of the peak top is observed less than -80 ppm -40 ppm is usually 5.0ppm or less, preferably 4.0ppm In the following, it is usually 0.3 ppm or more, preferably 0.4 ppm or more.

Similarly, the half width of the D ⁿ peak group observed at the peak top position of −40 ppm or more and 0 ppm or less is generally smaller than that of the T ⁿ peak group because the molecular motion constraint is small, and usually 3.0 ppm or less. , Preferably 2.0 ppm or less, and usually in the range of 0.3 ppm or more.

  If the half width of the peak observed in the above chemical shift region is larger than the above range, the molecular motion is constrained and the strain becomes large, and cracks are likely to occur, which may result in a member having poor heat resistance and weather resistance. There is. For example, in the case where a large amount of tetrafunctional silane is used, or in the state where rapid drying is performed in the drying process and a large internal stress is stored, the full width at half maximum is larger than the above range.

  In addition, when the half width of the peak is smaller than the above range, Si atoms in the environment are not involved in the siloxane crosslinking, and the trifunctional silane remains in an uncrosslinked state and is formed mainly of siloxane bonds. There is a risk of becoming a member that is inferior in heat resistance and weather resistance to a substance.

  The composition of the silicone material of the present invention is limited to the case where the crosslinking in the system is mainly formed by inorganic components including silica. That is, even in the case of a silicone material containing a small amount of Si component in a large amount of organic component, even if the peak in the above-described half-value range is observed at -80 ppm or more, good heat resistance / light resistance and coating performance cannot be obtained. .

  The chemical shift value of the silicone-based material of the present invention can be calculated based on the results of solid Si-NMR measurement using the following method, for example. In addition, analysis of measurement data (half-width or silanol amount analysis) is performed by a method of dividing and extracting each peak by, for example, waveform separation analysis using a Gaussian function or a Lorentz function.

{Solid Si-NMR spectrum measurement}
When performing a solid Si-NMR spectrum about a silicone type material, a solid Si-NMR spectrum measurement and waveform separation analysis are performed on condition of the following. Further, from the obtained waveform data, the half width of each peak is determined for the silicone material.

<Device conditions>
Apparatus: Chemmagnetics Infinity CMX-400 Nuclear magnetic resonance spectrometer
²⁹ Si resonance frequency: 79.436 MHz
Probe: 7.5 mmφ CP / MAS probe Measurement temperature: room temperature Sample rotation speed: 4 kHz
Measurement method: Single pulse method
¹ H decoupling frequency: 50 kHz
²⁹ Si flip angle: 90 °
²⁹ Si 90 ° pulse width: 5.0 μs
Repeat time: 600s
Integration count: 128 Observation width: 30 kHz
Broadening factor: 20Hz

<Data processing method>
For silicone-based materials, 512 points are taken as measurement data, zero-filled to 8192 points, and Fourier transformed.

<Waveform separation analysis method>
For each peak of the spectrum after Fourier transform, optimization calculation is performed by a non-linear least square method with the center position, height, and half width of the peak shape created by Lorentz waveform and Gaussian waveform or a mixture of both as variable parameters.

  In addition, identification of a peak is AIChE Journal, 44 (5), p. Refer to 1141, 1998, etc.

[1-3-2] Silicon Content The silicon material of the present invention preferably has a silicon content of 20% by weight or more (feature (2)). The basic skeleton of a conventional silicone material is an organic resin such as an epoxy resin having a carbon-carbon and carbon-oxygen bond as the basic skeleton, whereas the basic skeleton of the silicone material of the present invention is glass (silicate). It is the same inorganic siloxane bond as glass). As is apparent from the chemical bond comparison table shown in Table 1 below, this siloxane bond has the following characteristics excellent as a silicone material.

(I) Since the binding energy is large and thermal decomposition and photolysis are difficult, light resistance is good.
(II) It is slightly polarized electrically.
(III) The degree of freedom of the chain structure is large, a structure having a high flexibility is possible, and the chain structure can freely rotate about the siloxane chain center.
(IV) The degree of oxidation is large and no further oxidation occurs.
(V) Excellent electrical insulation.

  Because of these characteristics, a silicone-based material formed with a skeleton in which siloxane bonds are three-dimensionally bonded with a high degree of crosslinking is close to an inorganic material such as glass or rock, and becomes a protective film rich in heat resistance and light resistance. Can understand. In particular, a silicone-based material having a methyl group as a substituent has no absorption in the ultraviolet region, so that photolysis hardly occurs and has excellent light resistance.

As described above, the silicon content of the silicone material of the present invention is 20% by weight or more, preferably 25% by weight or more, and more preferably 30% by weight or more. On the other hand, the upper limit is usually in the range of 47% by weight or less because the silicon content of the glass composed solely of SiO ₂ is 47% by weight.

  The silicon content of the silicone material is calculated based on the result of inductively coupled plasma spectrometry (hereinafter abbreviated as “ICP” where appropriate) using, for example, the following method. be able to.

{Measurement of silicon content}
A single cured product of silicone material is pulverized until the particle size becomes about 100 μm, and kept in a platinum crucible in air at 450 ° C. for 1 hour, then at 750 ° C. for 1 hour, and at 950 ° C. for 1.5 hours. After calcination and removal of the carbon component, add 10 times or more amount of sodium carbonate to a small amount of the resulting residue, heat with a burner to melt, cool this, add demineralized water, and then neutralize the pH with hydrochloric acid. The volume is adjusted to about several ppm as silicon while adjusting to the degree, and ICP analysis is performed.

[1-3-3] Silanol content The silicone material of the present invention has a silanol content of usually 0.01 wt% or more, preferably 0.1 wt% or more, more preferably 0.3 wt% or more, Further, it is usually 10% by weight or less, preferably 8% by weight or less, and more preferably 5% by weight or less (feature (3)).

  The silicone-based material of the present invention has excellent performance with low silanol content, little change with time, excellent long-term performance stability, and low moisture absorption and moisture permeability. However, since a member containing no silanol is inferior in adhesion, there exists an optimum range for the silanol content as described above.

  The silanol content of the silicone-based material is measured by, for example, measuring the solid Si-NMR spectrum using the method described in the above-mentioned section of {Solid Si-NMR spectrum measurement}, and the silanol-derived peak area relative to the total peak area. From the ratio, it can be calculated by obtaining the ratio (%) of silicon atoms which are silanols in all silicon atoms and comparing it with the separately analyzed silicon content.

  Further, since the silicone material of the present invention contains an appropriate amount of silanol, the silanol hydrogen bonds to the polar portion present on the device surface, thereby exhibiting adhesion. Examples of the polar part include a hydroxyl group and a metalloxane-bonded oxygen.

  In addition, the silicone material of the present invention can form a covalent bond by dehydration condensation with a hydroxyl group on the device surface by heating in the presence of an appropriate catalyst, and can exhibit stronger adhesion. .

  On the other hand, if the silanol content is too high, the inside of the system will thicken and it will become difficult to apply, or the activity will increase and solidify before the light boiling component volatilizes by heating, causing foaming and internal stress. There is a risk that an increase will occur, leading to cracks and the like.

[1-3-4] Hardness measurement value The silicone-based material of the present invention preferably exhibits an elastomeric shape. Specifically, it has the following feature (4).
(4) The hardness measurement value (Shore A) by durometer type A is usually 5 or more, preferably 7 or more, more preferably 10 or more, and usually 90 or less, preferably 80 or less, more preferably 70 or less.

  By having a hardness measurement value in the above range, it is possible to obtain an advantage that cracks are hardly generated and that reflow resistance and temperature cycle resistance are excellent. Reflow refers to a soldering method in which a solder paste is printed on a substrate, a component is mounted thereon, and heated and joined. The reflow resistance refers to a property that can withstand a thermal shock of a maximum temperature of 260 ° C. for 10 seconds.

  The hardness measurement value (Shore A) can be measured by the method described in JISK6253. Specifically, the measurement can be performed using an A-type rubber hardness meter manufactured by Furusato Seiki Seisakusho.

[1-3-5] Other Additives The silicone material of the present invention contains a metal element capable of providing a metal oxide having a high refractive index in order to adjust the refractive index of the sealing material. Can be present inside. Examples of metal elements that give a metal oxide having a high refractive index include Si, Al, Zr, Ti, Y, Nb, and B. These metal elements may be used alone or in combination of two or more in any combination and ratio.

  The presence form of such a metal element is not particularly limited as long as the transparency of the sealing material is not impaired. For example, even if a uniform glass layer is formed as a metalloxane bond, it exists in the sealing material in a particulate form. It may be. When present in the form of particles, the structure inside the particles may be either amorphous or crystalline, but is preferably a crystalline structure in order to provide a high refractive index. In addition, the particle diameter is usually not more than the emission wavelength of the semiconductor light emitting device, preferably not more than 100 nm, more preferably not more than 50 nm, particularly preferably not more than 30 nm so as not to impair the transparency of the sealing material. For example, by adding particles of silicon oxide, aluminum oxide, zirconium oxide, titanium oxide, yttrium oxide, niobium oxide, etc. to a silicone material, the above metal element can be present in the sealing material in the form of particles. it can.

  The silicone material of the present invention may further contain known additives such as a diffusing agent, a filler, a viscosity modifier, and an ultraviolet absorber.

  Specific examples of the silicone material of the present invention include silicone materials described in Japanese Patent Application No. 2006-176468.

[1-4] Other components The light-emitting light source used in the lighting device of the present invention includes, as an optional component, a dye, an antioxidant, a stabilizer (processing stability such as a phosphorus-based processing stabilizer) as an optional component. Any of additives known in the art such as a light-resistant stabilizer such as a oxidant, an oxidation stabilizer, a heat stabilizer, and an ultraviolet absorber), a silane coupling agent, a light diffusing material, and a filler. be able to.

[1-5] Structure of light-emitting light source The light-emitting light source used in the illumination device of the present invention is not particularly limited in its specific structure as long as it contains the light-emitting element and the phosphor described above. It is desirable to use an LED as the solid state light emitting device.

  Although the example of embodiment of the light emission light source using LED is explained in full detail below, this invention is not limited to the following description, It can implement in various changes within the range of the summary. .

[1-5-1] Embodiment 1
FIG. 1 is a diagram schematically showing the configuration of an LED lamp according to an embodiment of the present invention.

  The LED lamp 1 of the present embodiment includes a frame 2, an LED 3 that is a light emitting element, and a phosphor-containing portion 4 that absorbs a part of light emitted from the LED 3 and emits light having a wavelength different from that.

  The frame 2 is a metal base for holding the LED 3 and the phosphor-containing portion 4. The frame 2 has a pair of conductive members 2B and 2C, and a concave portion (dent) 2A having a trapezoidal cross section opened upward in FIG. 1 is formed on the upper surface of one conductive member 2B.

  At the bottom of the recess 2A, an LED 3 is installed as a light emitting element. The LED 3 emits light from the near-ultraviolet region to the blue region when power is supplied, and the one described in the above item [1-1] can be used. Furthermore, in the recess 2 </ b> A, a phosphor-containing part 4 that absorbs part of the light emitted from the LED 3 and emits light of a different wavelength is provided so as to cover the LED 3. Part of the light emitted from the LED 3 is absorbed as excitation light by the luminescent material (phosphor) in the phosphor-containing part 4, and another part is transmitted through the phosphor-containing part 4 and passes through the LED lamp 1. Is to be released from.

  Arbitrary methods can be adopted for installing the LED 3 in the recess 2A. In this embodiment, the LED 3 is installed in the recess 2 </ b> A by bonding with an adhesive 5.

  The LED 3 installed in the recess 2 </ b> A is electrically connected to the frame 2. By supplying electric power to the LED 3 through the frame 2, the LED 3 emits light. The electrical connection between the LED 3 and the frame 2 can be performed by an appropriate method according to the arrangement of electrodes (not shown) in the LED 3. For example, when a set of electrodes is provided only on one side of the LED 3, as shown in FIG. 1, the LED 3 is installed with the surface on which the electrode is provided facing upward, and each set of electrodes and each conductive member By connecting 2B and 2C with, for example, a gold wire 6, the frame 2 and the LED 3 can be electrically connected. In addition, when a pair of electrodes is provided on two opposite surfaces of the LED 3, the LED 3 is installed in the recess 2 </ b> A through the conductive paste with one set of electrodes facing down, and the remaining The frame 2 and the LED 3 can be electrically connected by connecting the pair of electrodes and the conductive member 2C with, for example, a gold wire.

  The phosphor-containing part 4 has a configuration containing a transparent resin and a phosphor. The phosphor is a substance that is excited by light emitted from the LED 3 and emits light having a different wavelength. One type of fluorescent substance which comprises the fluorescent substance containing part 4 may be sufficient, and a multiple types of mixture may be sufficient as it. In any case, the type of the phosphor may be selected so that the sum of the light emitted from the LED 3 and the light emitted from the phosphor contained in the phosphor-containing portion 4 has a desired color. The transparent resin not only transmits light emitted from the LED 3 and the phosphor, but also has a function of sealing the LED 3 and dispersing and holding the phosphor. If it has such a function, any material can be used as the transparent resin, and here, the above-described sealing material is used.

  From the LED lamp 1, a part of the light emitted from the LED 3 and the light emitted from the phosphor contained in the phosphor containing part 4 are emitted. As described above, since the LED 3 and the phosphor-containing portion 4 are provided in the cup-shaped recess 2A, the light emitted from the LED lamp 1 can have directivity, and the emitted light is effectively used. can do.

  The LED 3, the phosphor-containing part 4, the phosphor-containing part 4, etc. can be protected by the mold part 7 as necessary. By forming the mold part 7 in a predetermined shape, the mold part 7 can have a function as a lens (light distribution control element) for controlling light distribution characteristics. In this embodiment, the mold part 7 is formed in a bullet shape to have a lens function. The mold part 7 can be made of a transparent resin. Examples of the resin used for the mold part 7 include an epoxy resin, a urethane resin, and a silicone resin, and among these, an epoxy resin is particularly preferable. You may make the resin which comprises the mold part 7 contain additives, such as a viscosity modifier, a diffusion agent, and an ultraviolet absorber, as needed.

  As described above, a plurality of LED lamps 1 as light emitting light sources having the LED 3 and the phosphor-containing portion 4 are integrated and arranged on a substrate, for example, to constitute the light emitting portion in the present invention. In a case where each light source does not have the mold part 7, a plurality of light sources may be integrated and then all the light sources may be collectively protected by the mold part.

[1-5-2] Embodiment 2
In the first embodiment, the LED 3 is sealed with the phosphor-containing portion 4 so that the solid light emitting element and the phosphor are configured as the same module. However, the solid light emitting element and the phosphor may be configured as separate modules. it can. Below, the light emission source of Embodiment 2 which comprised the solid light emitting element and the fluorescent substance by another module is demonstrated.

  The light emitting light source shown in FIG. 2A includes a solid light emitting element module 10 obtained by modularizing a solid light emitting element, and a phosphor module 20 obtained by modularizing a phosphor containing portion. As shown in FIG. 2B, the phosphor module 20 is joined to the solid state light emitting element module 10, thereby forming a light emission source.

  Hereinafter, each module will be described.

[1-5-2-1] Solid Light-Emitting Element Module As shown in FIG. 2B, the solid-state light-emitting element module 10 includes a base 11 and a solid-state light-emitting element 12 disposed on the base 11.

(I) Base The base 11 of the solid light emitting element module 10 fixes and supports the solid light emitting element 12. In FIG. 2B, a disk-shaped base 11 is shown. However, the base 11 can be used in the present embodiment as long as it can withstand the use conditions as the base of the solid state light emitting device module in the present embodiment, such as temperature conditions. As long as the effect of the above is not significantly impaired, it can be configured with any material, shape, and dimensions. In addition, the surface of the base 11 on which the solid light emitting element 12 is arranged may cover the entire base 11 so as to seal the solid light emitting element 12, and the mold part 7 may be formed. As resin which comprises the mold part 7, the same resin as used in Embodiment 1 can be used.

(Ii) Solid-state light-emitting element As the solid-state light-emitting element 12, the same light emitting light source as that described above, particularly an LED, can be preferably used in order to emit primary light. Therefore, when the primary light is emitted using the solid light emitting element 12 and the phosphor-containing portion 22 as shown in FIG. 2B, the solid light emitting element module 10 is provided with at least one solid light emitting element 12. In this case, the solid state light emitting device 12 may be configured to be shared by two or more phosphor portions 22.

  Further, the number of the solid light emitting elements 12 may be one or plural depending on the size of the base 11 or the like. In this embodiment, a plurality of, specifically, nine solid light emitting elements 12 are arranged on the base 11.

(Iii) Other members The solid light emitting element module 10 may include members other than the base portion 11 and the solid light emitting element 12. For example, the solid state light emitting element module 10 may have a wiring 13 for supplying power to the solid state light emitting element 12. Usually, the wiring 13 is provided on the base 11 of the solid state light emitting element module 10. When a plurality of solid state light emitting elements 12 are provided on the base 11, the wiring 13 is provided so that power can be supplied to each solid state light emitting element 12.

[1-5-2-2] Phosphor Module As shown in FIG. 2B, the phosphor module 20 is bonded to the upper surface of the solid light emitting element module 10, so that the light emitting source of the present embodiment is changed to a solid light emitting element. The module 10 is configured together with other members as necessary, and includes a base portion 21 and a phosphor-containing portion 22 disposed on the base portion 21. In order to effectively use light from the solid state light emitting element module 10, it is preferable that the phosphor module 20 is in close contact with the solid state light emitting element module 10, but the surface material of the solid state light emitting element module 10 and the transparency of the phosphor module 20 are transparent. Depending on the resin material, the phosphor module 20 may be arranged with a space between the solid light emitting element module 10.

(I) Base Part The base part 21 of the phosphor module 20 is a support for the phosphor-containing part 22 and can be composed of, for example, a transparent film or plate (sheet).

  The base 21 of the phosphor module 20 can be any material as long as it can withstand the use conditions as the base of the phosphor module in the present embodiment, such as temperature conditions, as long as the effects of the present embodiment are not significantly impaired. It can be configured by shape and size.

(Ii) Phosphor-containing part The phosphor-containing part 22 is formed in a partial region of the base part 21 and is dispersed in the transparent resin and the transparent resin in the same manner as the phosphor-containing part 4 described in the first embodiment. And a phosphor. As the fluorescent substance containing part 22, the thing similar to the fluorescent substance containing part 4 mentioned above can be used.

  The phosphor-containing part 22 is usually provided on the surface of the base 21, but when the transparent resin of the phosphor-containing part 22 is the same as the material constituting the base 21, the phosphor is contained in a part of the base 21. By doing so, the phosphor-containing portion 22 can also be configured.

  When forming the phosphor-containing part 22 on the surface of the base 21, as a method of providing the phosphor-containing part 22 on the base 21, for example, a dispersion liquid in which a phosphor is dispersed in a transparent resin (binder resin) is prepared. A method of patterning and coating this on the base 21 may be mentioned.

  Specific methods for patterning and coating the phosphor-containing portion 22 on the base 21 include printing methods such as screen printing, gravure printing, flexographic printing, and ink jet printing, or a photosensitive resist as a transparent resin. Examples include a method of patterning by preparing a dispersion liquid in which the body is dispersed, applying the dispersion liquid to the surface of the base portion 21, exposing through a mask, and developing and removing the unexposed portion. Of course, in addition to these methods, as another method for forming the phosphor-containing portion 22 at once, for example, any patterning method used when producing a color filter can be used, and a transparent resin to be selected is used. Depending on the case, a transfer molding method or an injection molding method may be used. A method using a general dispenser is also possible as a method of forming the phosphor-containing portion 22 only in a necessary portion.

  The phosphor-containing part 22 is positioned so that the phosphor-containing part 22 faces the solid-state light-emitting element 12 so that the phosphor-containing part 22 can receive light emitted from the solid-state light-emitting element 12 of the solid-state light-emitting element module 10. Placed in position.

  Further, the number of the phosphor-containing portions 22 may be one or plural depending on the size of the base portion 21 and the like. In the present embodiment, nine phosphor-containing portions 22 are provided corresponding to the number of solid light emitting elements 12 in the solid light emitting element module 10.

(Iii) Other members The phosphor module 20 may include members other than the base portion 21 and the phosphor-containing portion 22.

  The phosphor module 20 configured as described above is combined with the solid light emitting element module 10 so that the phosphor containing portion 22 receives light (excitation light) emitted from the solid light emitting element 12 of the solid light emitting element module 10. To do. When the phosphor-containing part 22 receives light from the solid-state light emitting element 12, the phosphor in the phosphor-containing part 22 is excited and emits fluorescence (that is, primary light).

[2] Light Emitting Unit The lighting device of the present invention includes a light emitting unit in which the above-described light emitting sources are integrated and arranged. In the light emitting unit, the plurality of light emitting light sources are arranged such that primary light emitted from the light emitting light source is synthesized within a predetermined distance from the light emitting surface of the light emitting unit and emits combined light.

  As described in the second embodiment, when the solid light emitting element module 10 and the phosphor module 20 have a plurality of solid light emitting elements 12 and phosphor containing portions 22, respectively, the entire configuration shown in FIG. 2A emits light. A light source can be configured by integrating and arranging a plurality of light sources, or a set of individual solid light emitting elements 12 and phosphor-containing units 22 is used as a light source, and the entire configuration shown in FIG. It can also be configured as. In the latter case, a plurality of types of phosphors are used as phosphors contained in each phosphor-containing portion 22 so that a plurality of types of primary light having different wavelengths are emitted.

  Hereinafter, the light emitting unit will be described in detail by taking, as an example, a light emitting unit using a plurality of bullet-type LED lamps (hereinafter simply referred to as “bullet-type LEDs”) as described in the first embodiment.

[2-1] Arrangement of Light-Emitting Light Sources When the lighting device of the present invention is configured by stacking a plurality of bullet-type LEDs having different emission colors, the number and arrangement of the bullet-type LEDs to be accumulated will be described later. Similarly, it can select suitably according to the magnitude | size of the illuminating device designed and the illumination intensity requested | required.

  In addition, when the structural axes (or optical axes) L (shown in FIG. 3) of the plurality of bullet-type LEDs that are integrated are non-parallel to each other, on the irradiation surface on which the combined light emitted from the plurality of bullet-type LEDs hits. It becomes difficult to obtain uniformity of illuminance. In particular, when the distance between the LEDs is increased, it is difficult to obtain illuminance uniformity. Therefore, when a plurality of bullet-type LEDs are mounted on a wiring board to form a light emitting unit, the structure axis (or optical axis) L of the bullet-type LED 100 is arranged so as to be perpendicular to the wiring board surface. Is preferred. The same applies to the case where the solid state light emitting device is a surface mount type LED chip.

  When the solid state light emitting device is a bullet type LED or a surface mount type LED chip as described above, the light emitting surface of the light emitting unit in the present invention includes the tip of the light emitting side of the light emitting light source, and the solid state light emitting devices are integratedly arranged. A plane parallel to the wiring board to be formed. Moreover, in the case of the light emission light source and light emission part modularized like the above-mentioned Embodiment 2, let the light emission side surface of a fluorescent substance module be a light emission surface.

[2-2] Combination of light emitting light sources The lighting device of the present invention includes a plurality of the above light emitting light sources.

  The plurality of light-emitting light sources emit two or more types of light having different wavelengths (primary light). By mixing the primary light of these two or more different wavelengths, it can be set as the synthesized light.

  A conventional white light emitting device combining an LED and a phosphor of one or more colors has a package dependency, that is, there is an influence of LED wavelength variation, phosphor dispersion variation, package size and shape, etc. When constructing the color (target color), it is complicated to formulate a prescription, and there is a possibility that technical difficulties may arise. In the present invention, since the light emitting unit is configured by arranging a plurality of light emitting light sources in an integrated manner, it has a very technical significance in that a desired color can be obtained simply by adjusting the primary light emitted from each light emitting light source. large.

  The primary light is usually 2 colors or more, preferably 3 colors or more. In constituting the target color, the primary light is preferably multicolored, so that the illumination light source such as daylight color to daylight white to white to warm white to bulb color, CIE standard light (A, B, C and D65) can be used. ), Sunlight (natural light) spectrum, and the like, a target color having a wide spectrum from near ultraviolet light to near infrared light can be reproduced.

  Specific examples of the combination of primary light include the following.

Example of mixing two colors:
Combinations of emission peak wavelengths of 400 nm to 490 nm (blue) and 560 nm to 590 nm (yellow), 480 nm to 500 nm (blue green), and 580 nm to 700 nm (red). Among these, combinations of 400 nm to 490 nm (blue) and 560 nm to 590 nm (yellow) are preferable.

Example of mixing three colors:
Combinations of emission peak wavelengths of 430 nm to 500 nm, 500 nm to 580 nm, and 580 nm to 700 nm, combinations of 430 nm to 480 nm, 480 nm to 500 nm, and 580 nm to 700 nm, combinations of 430 nm to 500 nm, 560 nm to 590 nm, and 590 nm to 700 nm. Among these, combinations of 430 nm to 500 nm, 500 nm to 580 nm, and 580 nm to 700 nm are preferable.

Example of mixing four colors:
Emission peak wavelengths are 430 nm to 500 nm, 500 nm to 580 nm, 580 nm to 620 nm and 620 nm to 700 nm in combination, 430 nm to 480 nm, 480 nm to 500 nm, 500 nm to 580 nm and 580 nm to 700 nm in combination, 430 nm to 480 nm, 480 nm to 500 nm, 560 nm to Combination of 590 nm and 590 nm to 700 nm. Of these, combinations of 400 nm to 490 nm, 490 nm to 580 nm, 580 nm to 620 nm, and 620 nm to 700 nm are preferable.

Example of mixing 5 colors:
Combinations of emission peak wavelengths of 430 nm to 480 nm, 480 nm to 500 nm, 500 nm to 580 nm, 580 nm to 620 nm, 620 nm to 700 nm, and the like.

[2-3] Energy ratio of light emitting part of light emitting light source The illumination device of the present invention emits primary light of two or more different wavelengths from a plurality of light emitting light sources as described above in [2-2]. By mixing these primary lights, a composite light having a desired color can be created. Here, when creating synthetic light including a combination of three types of primary light having emission peak wavelengths in the following first to third different wavelength ranges, the energy ratio of the light emitting part of the light emitting light source is The primary light having the emission peak wavelength in the first wavelength range is E ₁ , the primary light energy having the emission peak wavelength in the second wavelength range is E ₂ , and the primary light has the emission peak wavelength in the third wavelength range. energy when the set to E _{3 of, E 1: E 2: E} 3 = 5~90: 5~90: is preferably 5 to 90. By combining at such an energy ratio, fine white light control can be achieved.
First wavelength range: 430 nm or more and less than 500 nm (hereinafter, this wavelength range may be referred to as “Rb”).
Second wavelength range: 500 nm or more and less than 580 nm (hereinafter, this wavelength range may be referred to as “Rg”.)
Third wavelength range: 580 nm to 700 nm (hereinafter, this wavelength range may be referred to as “Rr”).
In this case, in order to create a synthesized light by color mixing of the primary light more effectively, it is preferable area of the light emitting portion of the light emission source is in the range of 0.1 mm ² of 100 mm ^2.

The energy ratio E ₁ : E ₂ : E ₃ is preferably 5 to 90: 5 to 90: 5 to 90, and more preferably 10 to 80:10 to 80:10 to 80. Energy ratio E ₁ : E ₂ : E ₃
If it is out of the above range, there is a possibility that a sufficient amount of light cannot be obtained, energy efficiency is lowered, a desired spectrum or color temperature cannot be obtained, and sufficient color rendering properties cannot be obtained.

  Here, “the energy of the light emitting part of the light emitting light source” refers to the light emitted from the light emitting light source of each wavelength expressed by the amount of energy. Factors that determine the amount of energy include, for example, the area of the light emitting portion of the light emitting light source, the light emitting time of the light emitting light source, the driving current value of the light emitting light source, and the power amount of the light emitting light source (driving current value × voltage value). be able to.

  Further, for example, “the energy of the light emitting portion of the light emitting light source at the wavelength of Rb” represents the sum of the energy of the plurality of light emitting light sources when there are a plurality of light emitting light sources that emit primary light of the Rb wavelength. .

[2-3-1] Area of the light emitting part of the light emitting light source The area of the light emitting part of the light emitting light source is defined as an area per unit with the light emitting part of one unit of the light emitting light source as a surface, for example, Rb, Rg described above And Rr multiplied by the number of light emitting light sources having wavelengths in each region.

  That is, the energy ratio of the light emitting portion can be adjusted by adjusting the number of light emitting light sources having the wavelengths in the Rb, Rg, and Rr regions and the area per unit.

  Therefore, for example, in each of the Rb, Rg, and Rr regions, if the factors that determine the energy amount other than the area of the light emitting part are the same, the area of the light emitting part of the light emitting light source at each wavelength is set to the light of the light emitting light source. The above-mentioned energy ratio can be calculated as the energy of the emission part.

[2-3-2] Light Emission Time of Light Emitting Light Source The light emission time of the light emitting light source is the light emitting time per unit time within a certain time of the light emitting light source. For example, Rb, Rg, and This is multiplied by the number of light emitting light sources having wavelengths in each region of Rr.

  That is, the energy ratio of the light emitting part can be adjusted by adjusting the light emission time of the light emitting light source having the wavelength in each of the Rb, Rg, and Rr regions.

  Therefore, for example, in each of the Rb, Rg, and Rr regions, if the factors that determine the energy amount other than the light emission time are the same, the light emission time of the light emission source at each wavelength is the energy of the light emission part of the light emission light source. As mentioned above, the above-mentioned energy ratio can be calculated.

  Furthermore, the above-mentioned energy ratio can be freely changed by adding a control device for controlling the light emission time, which is one of the driving conditions of the light emitting light source, for each region of Rb, Rg, and Rr. Thereby, it can be set as the illuminating device from which the brightness | luminance of the synthetic light emitted from a light emission part, color temperature, and saturation are variable, and illumination quality can be adjusted arbitrarily as desired.

  Specific control devices for controlling the light emission time include those based on a general AC power supply (50/60 Hz) or those using a high-frequency circuit, and are performed by PWM control for emitting light in a pulsed manner. be able to.

[2-3-3] Driving Current Value of Light-Emitting Light Source The driving current value of the light-emitting light source is a driving current value per unit of the light-emitting light source. For example, each region of Rb, Rg, and Rr described above Multiplied by the number of light-emitting light sources having the wavelength in FIG. When the light emission sources are the same type, the drive voltage values are almost the same.

  That is, the energy ratio of the light emitting part can be adjusted by adjusting the drive current value of the light emitting light source having the wavelength in each of the Rb, Rg, and Rr regions.

  Therefore, for example, in the Rb, Rg, and Rr regions, if the factors that determine the energy amount other than the driving current value are the same, the driving current value of the light emitting light source at each wavelength is set to the energy of the light emitting portion of the light emitting light source. As mentioned above, the above-mentioned energy ratio can be calculated.

  Furthermore, the above-mentioned energy ratio can be freely changed by adding a control device for controlling the drive current, which is one of the drive conditions of the light emitting light source, for each region of Rb, Rg, and Rr. Thereby, it can be set as the illuminating device from which the brightness | luminance of the synthetic light emitted from a light emission part, color temperature, and saturation are variable, and illumination quality can be adjusted arbitrarily as desired.

[2-3-4] Electric energy of the light emitting light source (drive current value × voltage value)
The power amount of the light emitting light source is a power amount per unit of the light emitting light source, which is multiplied by the number of light emitting light sources having a wavelength in each of the aforementioned Rb, Rg, and Rr regions. When the emission light source is of a different type (element structure, element size, wavelength, etc.), the drive voltage value is different.

  That is, the energy ratio of the light emitting part can be adjusted by adjusting the amount of power of the light emitting light source having the wavelength in each of the Rb, Rg, and Rr regions.

  Therefore, for example, in each region of Rb, Rg, and Rr, if the factors that determine the amount of energy other than the amount of power are the same, the amount of power of the light emitting light source at each wavelength is used as the energy of the light emitting portion of the light emitting light source. The above energy ratio can be calculated.

  Furthermore, the above-mentioned energy ratio can be freely changed by adding a control device for controlling the amount of power, which is one of the driving conditions of the light emitting light source, for each region of Rb, Rg, and Rr. Thereby, it can be set as the illuminating device from which the brightness | luminance of the synthetic light emitted from a light emission part, color temperature, and saturation are variable, and illumination quality can be adjusted arbitrarily as desired.

[2-3-5] Arrangement of light emitting light source In addition to the above-mentioned energy ratio, as a factor contributing to dimming, for example, appropriately arranging the light emitting light sources of the respective wavelengths described above can be cited. The following can be given as an example of an appropriate arrangement when combining three-color light emission sources (red, green, and blue).

  (I) By preventing red, green, and blue from being adjacent to each other as much as possible, a uniform white color can be achieved. In this case, when the energy ratio of red, green, and blue is adjusted by the area ratio, a uniform white color can be achieved by combining patterns in which red, green, and blue increase. For example, FIGS. 4A to 4D show four pattern examples in which the area ratio of red increases. It is also possible to replace red, green and blue. Further, the patterns shown in FIGS. 4A to 4D may be appropriately combined to form a module.

  (Ii) The same thing can also be made to adjoin only a part so that red, green, and blue may adjoin each other. For example, FIGS. 4E to 4H show four pattern examples in which the area ratio of red, green, and blue is made constant and the energy ratio is adjusted by the drive power amount or the drive current value. It is also possible to replace red, green and blue. Further, the patterns shown in FIGS. 4E to 4H may be appropriately combined to be modularized.

(Iii) As shown in FIG. 5, intervals (pitch P ₁ , P ₂ ,
In order to narrow P ₃ ), the red, green, and blue ones are arranged as repeating units of the smallest unit of equilateral triangles combined by close packing. By narrowing the pitches P ₁ , P ₂ , and P ₃ , an effect of shortening the color mixing distance of the three color light sources (red, green, and blue) can be obtained.

  (Iv) As another example of arranging the three light emitting light sources (red, green, blue) with a narrow interval (pitch), a conventional arrangement in which the light emitting light sources are square as shown in FIG. A honeycomb structure inclined by 45 degrees can be mentioned. Since the pitch of the light emitting light sources can be made narrower than the conventional arrangement in which the light emitting light sources are square (FIG. 6B), the effect of shortening the color mixing distance of the three color light emitting light sources (red, green, blue) is achieved. Can be obtained.

  4 to 6, B represents a light emitting light source having a wavelength of blue (Rb), G represents a green color (Rg), and R represents a red (Rr) wavelength.

[3] Illuminating device [3-1] Illuminance In the illuminating device of the present invention, the illuminance of the combined light at a position 30 cm away from the light emitting surface of the light emitting unit in the vertical direction is 150 lux or more.

  Conventional light emitting devices using LEDs and phosphors have used synthesized light for image display, but have no specific concept of using them as lighting devices. Therefore, it does not assume a configuration or structure in which the illuminance at a position 30 cm away is more than a certain level. The illumination device of the present invention is clearly distinguished from a conventional light emitting device (backlight) for an image display device, and this point has the technical significance of the present invention.

  In the illumination device of the present invention, the illuminance at a position 30 cm away from the light emitting surface of the light emitting portion in the vertical direction is 150 lux or more, more preferably 300 lux or more, and particularly preferably 500 lux or more. If the illuminance is too low, the combined light is too weak and the irradiated surface becomes too dark and the light source of the present embodiment may not be used for lighting devices (hereinafter referred to as “illumination” where appropriate). There is a possibility that the light source of the present embodiment cannot be used for illumination due to excessive glare. On the other hand, the quality of lighting is not only determined by illuminance, but the impression changes depending on the color temperature and color rendering, so comprehensive performance is important.

  In order for the illuminating device of the present invention to achieve the above illuminance, specifically, the structure, number and arrangement of the light emitting light sources to be integrated are appropriately selected according to the size of the illuminating device and the required illuminance.

[3-2] Illumination color In the illumination device of the present invention, the color of the synthesized light observed at a position at least 10 cm away from the light emitting surface of the light emitting unit in the vertical direction is preferably white.

  In general, lighting is required to be as white as possible and have high color rendering properties so that the observer can perceive the color of the object correctly. For example, the color of an object cannot be perceived correctly under a red, yellow or sodium lamp. Therefore, the color of illumination by the illumination device of the present invention is preferably white or a pastel color that is a white peripheral color.

  This illumination color is realized by adjusting the mixing ratio of the respective colors (for example, blue, green, and red) of the light emitting light source. For example, if the amount of the red light source is increased, the white peripheral color becomes reddish.

  The position where the color of the synthesized light observed by the lighting device of the present invention is observed to be white is preferably a position of at least 10 cm or more, more preferably a position of at least 5 cm or more in the vertical direction from the light emitting surface of the light emitting unit. It is. If the position where white is observed is too short, color separation may occur on the irradiated surface.

  Further, if the color on the illumination side is separated in the surface irradiated with white, the object color cannot be perceived correctly. In particular, this color separation uses light from a blue semiconductor light emitting element having a wavelength of 430 nm or more and a phosphor that is excited by this light and emits yellow or green and red. This is likely to occur with a so-called white LED obtained by mixing colors. This is because the degree of color mixing is poor because the light distribution characteristics of the emission light of blue and phosphor are different. The white or white pastel color in the present invention is not a color mixture with excitation light, but is a phosphor that emits blue, green, and red light, for example, by excitation light from the above-described solid light-emitting element. The color is mixed by the light emission from.

[3-3] Color temperature Furthermore, the color temperature of the synthesized light according to the present embodiment can also be arbitrarily set according to its use and the like, but is usually 2000K or higher, preferably 2500K or higher, more preferably 2700K or higher. Moreover, it is 12000K or less normally, Preferably it is 10000K or less, More preferably, it is 7000K or less. Light in this range is often used because it looks good in cold and warm colors. Further, if it is out of this range, it becomes difficult to use the light source of the present embodiment for a lighting device for normal use. Note that the color temperature of the synthesized light can be measured by, for example, a color luminance meter, a radiance meter, or the like.

[3-4] Luminous Efficiency In the lighting device of the present embodiment, the luminous efficiency of the synthesized light is usually 30 lm / W or higher, preferably 50 lm / W or higher, more preferably 80 lm / W or higher. If the luminous efficiency is too low, the energy cost required for use may be too high, and the required characteristics as a lighting device with high energy efficiency are not satisfied. If the light emission efficiency is too low, there is a risk that element destruction will occur due to heat generation when the light source is integrated as an image display device. Note that the luminous efficiency of the light emitting light source can be measured, for example, by dividing the luminous flux of the combined light measured with an integrating sphere by the supply power.

[3-5] Average color rendering index Ra
The lighting device of the present invention has an average color rendering index Ra of 80 or more, preferably 85 or more, particularly preferably 90 or more, and is very excellent in color rendering.

  The average color rendering index Ra is calculated according to JIS Z 8726.

[3-6] Characteristics of the spectrum of the synthesized light Furthermore, the spectrum of the synthesized light according to the present embodiment is usually a combination of the spectra of the primary light. Further, it is preferable that the spectrum of the synthesized light is a continuous light of visible light because an illuminating device exhibiting good color rendering can be obtained, and it is more preferable that the spectrum of the synthesized light is as close as possible to Planck radiation.

  The spectrum of the synthesized light can be measured with a spectrophotometer.

  EXAMPLES Hereinafter, although this invention is demonstrated more concretely using an Example, this invention is not limited to a following example, unless the summary is exceeded.

[E1] Production of LED The package used was an SMD type package made of PPA having an outer diameter of 3.5 mm × 2.8 mm, and a one-component transparent silicone resin was used as the sealing material.

  In Examples 1 and 2 and Comparative Example 3, red, green, and blue LEDs were manufactured using the following semiconductor light-emitting elements and phosphors. In Comparative Examples 1 and 2, white LEDs were produced.

[E1-1] Semiconductor light emitting device [E1-1-1] Example 1, Example 2, and Comparative Example 1
An InGaN light emitting diode (LED) having a peak wavelength of 405 nm, a half width of 30 nm, and a size of 300 μm × 300 μm square was used.
[E1-1-2] Comparative Example 2
A blue InGaN light emitting diode (LED) having a peak wavelength of 460 nm, a half width of 30 nm, and a size of 300 μm × 300 μm square was used.
[E1-1-3] Comparative Example 3
A blue InGaN light emitting diode (LED) having a peak wavelength of 460 nm, a green InGaN light emitting diode (LED) having a peak wavelength of 520 nm, and an orange AlInGaP light emitting diode (LED) having a peak wavelength of 620 nm were used.

[E1-2] Phosphor [E1-2-1] Example 1 and Comparative Example 1
The following blue, green and red phosphors were used.

Blue phosphor (B1): Ba _0.7 Eu _0.3 MgAl ₁₀ O ₁₇ , main emission peak peak wavelength 457 nm, weight median diameter 11 μm.

Green phosphor (G1): Ba _1.39 Sr _0.46 Eu _0.15 SiO ₄ , main emission peak peak wavelength 525 nm, weight median diameter 20 μm.

Red phosphor (R1): Sr _0.792 Eu _0.008 Ca _0.2 AlSiN ₃ , main emission peak peak wavelength 628 nm, weight median diameter 9 μm.
[E1-2-1] Example 2
The same blue phosphor and green phosphor as in Example 1 were used, and the following was used as the red phosphor.

Red phosphor (R2): Ca _0.992 Eu _0.008 AlSiN ₃ , main emission peak peak wavelength 650 nm, weight median diameter 9 μm.
[E1-2-2] Comparative Example 2
The following yellow phosphor was used.

Yellow phosphor (Y1): (Y, Gd) ₃ Al ₅ O ₁₂ : Ce, main emission peak peak wavelength 565 nm, weight median diameter 8 μm.

[E2] Production of Lighting Device The LEDs obtained in [E1] were integrated in the following arrangement to produce a lighting device.

[E2-1] Example 1, Example 2, Comparative Example 3
As shown in FIGS. 7A-1 and 7A-2.

[E2-2] Comparative Example 1 and Comparative Example 2
As shown in FIGS. 7B-1 and 7B-2.

[E3] Characteristic Evaluation Regarding the lighting device obtained in [E2]
1) The energy ratio of red, green, and blue light sources, and 2) the color mixing distance, illuminance, color temperature, luminous efficiency, and average color rendering index (Ra) of the lighting device were evaluated.

  The evaluation results are shown in Table 2. Moreover, the emission spectrum of the illuminating device of Example 1 and Comparative Examples 1-3 is shown in FIG.

  The measurement conditions of * i) and * ii) in the table are as follows.

i) Measurement conditions (arrangement of FIGS. 7A-1 and 7B-1)
Drive current: 20mA
Color mixing distance: Hold the light source over the white scattering sheet from the top and determine the distance until color separation disappears visually.

    Illuminance: Measured using a TOPCON illuminance measuring instrument “Im-5” at a position 20 cm from a vertically installed light source.

    Color temperature: Measured with a spectral radiance meter “CS-1000” manufactured by Konica Minolta.

ii) Measurement conditions (arrangement of FIGS. 7 (a-2) and (b-2))
Drive current: Adjust RGB drive current to match chromaticity (5-20mA)
Luminous efficiency, average color rendering index, energy ratio: Measured with LED evaluation device “OL770” manufactured by Optronic Laboratories.

  From the above Examples and Comparative Examples, it was found that the luminous efficiency of the light emitting unit that synthesized the primary light of the phosphor single color LED of Example 1 was better than the white LED mixed with the phosphor of Comparative Example 1. Moreover, it turned out that the color mixing distance of the light emission unit which synthesize | combined the primary light of phosphor single color LED is shorter than the light emission unit which synthesize | combined the primary light of the single color LED of the comparative example 3. FIG. From these facts, it was found that the method of synthesizing primary light from a plurality of light emitting sources that emit primary light of different wavelengths has excellent overall performance as an illumination device.

  The light output without resin sealing of the LED having a peak wavelength of 405 nm used in Example 1 is 6 mW, but when a high output type 12 mW LED is used, an illumination device with a luminous efficiency of 55 lm / W can be realized. is there.

It is typical sectional drawing which shows Embodiment 1 of the light emission light source in this invention. It is a typical perspective view of Embodiment 2 of the light emission light source in this invention. It is a disassembled perspective view of the light emission light source shown to FIG. 2A. It is explanatory drawing explaining the structural axis of LED. It is a schematic diagram which shows the example of arrangement | positioning of the light emission light source of the illuminating device of this invention. It is a schematic diagram which shows the example of arrangement | positioning of the light emission light source of the illuminating device of this invention. It is a schematic diagram which shows the example of arrangement | positioning of the light emission light source of the illuminating device of this invention. It is a schematic diagram which shows integration | stacking arrangement | positioning of LED of the illuminating device produced in Example 1, 2 and Comparative Examples 1-3. It is a graph which shows the emission spectrum of the illuminating device produced in Example 1 and Comparative Examples 1-3.

Explanation of symbols

1 LED lamp 2 Frame 2A Recess 3 LED (light emitting element)
4 Phosphor-containing part 5 Adhesive 6 Wire 7 Mold part (light distribution control element)
DESCRIPTION OF SYMBOLS 10 Solid light emitting element module 11 Base 12 Solid light emitting element 20 Phosphor module 21 Base 22 Phosphor containing part 100 LED
L Structure axis

Claims (8)

A lighting device including a light emitting unit in which a plurality of types of light emitting light sources that emit primary light of different wavelengths are integrated and arranged,
The light emitting source contains a solid light emitting element and a phosphor;
The illumination device characterized in that the illuminance of the combined light at a position 30 cm away from the light emitting surface of the light emitting unit in the vertical direction is 150 lux or more.   The illumination device according to claim 1, wherein the color of the synthesized light observed at a position at least 10 cm away from the light emitting surface of the light emitting unit in the vertical direction is white. Area of the light emitting portion of the light emitting source is a 0.1 mm ² 100 mm ^2,
The light source emits light having an emission peak wavelength in a first wavelength range of 430 nm to less than 500 nm, a second wavelength range of 500 nm to less than 580 nm, and a third wavelength range of 580 nm to 700 nm,
The energy ratio of the light emitting part of the light emitting light source is
The energy of light having an emission peak wavelength in the first wavelength range is E1, the energy of light having an emission peak wavelength in the second wavelength range is E2, and the light having an emission peak wavelength in the third wavelength range is The lighting device according to claim 1 or 2, wherein when E3 is energy, E1: E2: E3 = 5 to 90: 5 to 90: 5 to 90.   The lighting device according to claim 3, further comprising a control device that controls a driving condition of the light emitting light source for each of the first to third wavelength ranges.   The illuminating device according to claim 1, wherein the light emitting light source includes a solid light emitting element module obtained by modularizing the solid light emitting element and a phosphor module obtained by modularizing the phosphor.   The lighting device according to claim 5, wherein the solid light-emitting element module includes a base and a solid light-emitting element disposed on the base.   The lighting device according to claim 5 or 6, wherein the phosphor module includes a base and a phosphor-containing portion that is disposed on the base and contains the phosphor. The solid state light emitting device module has a plurality of the solid state light emitting devices,
The phosphor module contains phosphors at positions corresponding to the plurality of solid state light emitting devices,
The lighting device according to any one of claims 5 to 7, wherein the solid-state light emitting element module and the phosphor module are joined to form a light emitting unit in which the plurality of types of light emitting light sources are integratedly arranged. .