JP2008060279A - Nitride semiconductor light-emitting diode element and its manufacturing method - Google Patents

Nitride semiconductor light-emitting diode element and its manufacturing method Download PDF

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JP2008060279A
JP2008060279A JP2006234677A JP2006234677A JP2008060279A JP 2008060279 A JP2008060279 A JP 2008060279A JP 2006234677 A JP2006234677 A JP 2006234677A JP 2006234677 A JP2006234677 A JP 2006234677A JP 2008060279 A JP2008060279 A JP 2008060279A
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nitride semiconductor
layer
holding substrate
emitting diode
formed
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JP4882611B2 (en
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Hiroaki Murata
博昭 村田
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Mitsubishi Cable Ind Ltd
三菱電線工業株式会社
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<P>PROBLEM TO BE SOLVED: To provide a nitride LED having a metal holding substrate without an occurrence of a problem of creeping up of an excessive adhesive on the side surface of an element to short-circuit between a p-type layer and an n-type layer, and without causing the interference problem of the light emission from the side surface of the nitride semiconductor layer, and to provide a suitable method for manufacturing a nitride LED. <P>SOLUTION: The nitride semiconductor light-emitting diode element 10 has the metal holding substrate 11, and a nitride semiconductor layer 12 laminated on it with a concave part 16 provided on the undersurface of the holding substrate 11. Preferably, the concave part 16 is provided on the undersurface of the holding substrate 11 formed with a plastic forming. With the other preferable manufacturing method, the metal holding substrate having the concave part on its surface is formed by forming an electric conductive layer having the concave part on its surface and by electroplating it as a foundation layer to precipitate the metal film. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a nitride semiconductor light-emitting diode element (hereinafter also referred to as a nitride LED) in which a main part of a light-emitting element structure is composed of a nitride semiconductor, and a manufacturing method thereof, in particular, on a metal holding substrate, The present invention relates to a nitride LED having a structure in which a nitride semiconductor layer having a light emitting element structure is stacked, and a method for manufacturing the same.

The nitride semiconductor is a compound semiconductor represented by a chemical formula Al a In b Ga 1-ab N (0 ≦ a ≦ 1, 0 ≦ b ≦ 1, 0 ≦ a + b ≦ 1), and is a group III nitride semiconductor Also called. In the above chemical formula, a part of the group 3 element is substituted with B (boron), Tl (thallium), etc., and a part of N (nitrogen) is P (phosphorus), As (arsenic), Sb (antimony) Those substituted with Bi (bismuth) or the like are also included in the nitride semiconductor. As a light emitting element structure, a high-brightness nitride LED having a pn junction structure formed by stacking a p-type layer and an n-type layer made of a nitride semiconductor has been put into practical use. A nitride LED having a double hetero structure in which an active layer is provided at a pn junction exhibits particularly high emission luminance.

  Nitride LEDs tend to have lower luminous efficiency when the element temperature rises due to energization. Therefore, in order to prevent a decrease in luminance due to this temperature rise, a nitride LED having a configuration in which a nitride semiconductor layer having a light emitting element structure is stacked on a metal holding substrate with good heat dissipation is provided. It has been developed (Patent Document 1). FIG. 8 is a cross-sectional view of a conventional nitride LED having such a configuration. On the holding substrate 101 made of Au (gold) and having a thickness of about 50 μm, the nitride semiconductor layer 102 is n-side ohmic. They are stacked via the electrode 103. In this specification, when the structure of the light emitting diode element is described, for convenience, it is assumed that the substrate is on the lower side and the nitride semiconductor layer is stacked thereon, and the vertical direction is distinguished.

  In the nitride LED 100 shown in FIG. 8, the nitride semiconductor layer 102 includes an n-type GaN layer 102a, an InGaN active layer 102b, and a p-type GaN layer 102c in this order from the holding substrate 101 side. The n-side ohmic electrode 103 is made of Ti / Au and is in ohmic contact with the n-type GaN layer 102a. A p-side ohmic electrode 104 made of ITO (indium tin oxide) is in ohmic contact with the p-type GaN layer 102c. A bonding pad 105 is electrically connected to the p-side ohmic electrode 104.

  The nitride LED 100 includes (i) a nitride semiconductor layer 102 and an n-type GaN layer 102a on a crystal substrate such as a sapphire substrate using a vapor phase epitaxial growth method such as an organic metal compound vapor phase growth method (MOVPE method). (Ii) sequentially form a p-side ohmic electrode 104 and a bonding pad 105 on the p-type GaN layer 102c, and (iii) separate the crystal substrate from the nitride semiconductor layer 102, thereby exposing n An n-side ohmic electrode 103 is formed on the surface of the type GaN layer 102a, and (iv) the holding substrate 101 is formed by depositing an Au film by electroplating using the n-side ohmic electrode 103 as a plating base layer. (V) Manufactured according to the procedure of dividing the wafer into chips.

When the nitride LED 100 shown in FIG. 8 is mounted on a substrate, the lower surface of the holding substrate 101 is bonded and fixed to the substrate surface using an adhesive such as an Ag paste.
JP 2004-88083 A

  However, in the nitride LED 100 shown in FIG. 8, when adhering to the substrate surface, excess adhesive pops up the side surface of the element, causing the n-type GaN layer 102 a and the p-type GaN layer 102 c to be short-circuited or nitrided. There is a problem that light emission from the end face of the physical semiconductor layer 102 is hindered.

  The present invention has been made in view of such circumstances, and has improved the above-described conventional problems, and provided with a metal holding substrate, an extra adhesive climbed up the side surface of the element, and the p-type layer and the n-type An object of the present invention is to provide a nitride LED that does not cause a problem of short-circuiting between the layers or obstructing light emission from the end face of the nitride semiconductor layer. Moreover, an object of this invention is to provide the suitable manufacturing method of this nitride LED.

The present invention has the following features.
(1) A nitride semiconductor light-emitting diode element having a metal holding substrate and a nitride semiconductor layer laminated thereon, and having a recess formed on the lower surface of the holding substrate.
(2) The nitride semiconductor light-emitting diode element according to (1), wherein the recess includes a dot-like depression.
(3) A bonding pad is formed on the nitride semiconductor layer, and a concave portion that is a dot-like depression is provided inside the projected area of the bonding pad on the lower surface of the holding substrate. The nitride semiconductor light-emitting diode device according to 2).
(4) The nitride semiconductor light-emitting diode element according to (1), wherein the recess includes an annular groove.
(5) The nitride semiconductor light-emitting diode element according to (4), wherein the concave portion includes a plurality of annular grooves.
(6) The nitride semiconductor light-emitting diode element according to any one of (1) to (5), wherein a depth of the concave portion is 5 μm to 50 μm.
(7) A method for manufacturing a nitride semiconductor light-emitting diode element, comprising a metal holding substrate and a nitride semiconductor layer laminated thereon, wherein a recess is formed on the lower surface of the holding substrate by plastic working A method for producing a nitride semiconductor light-emitting diode device, comprising:
(8) The manufacturing method according to (7), wherein a step of providing the concave portion is performed after forming a stacked body in which a nitride semiconductor layer is stacked on a metal holding substrate having a chip size.
(9) (a) a step of forming a nitride semiconductor layer on the single crystal substrate by vapor phase epitaxial growth, (b) a step of separating the nitride semiconductor layer from the crystal substrate, and (c) A step of forming a conductive layer having a concave portion on the surface as a base layer for electroplating on any surface of the nitride semiconductor layer; and And depositing a metal film to form a metal holding substrate having a concave portion on the surface thereof.
(10) Before the step (c), on the surface of the nitride semiconductor layer on the side where the conductive layer is to be formed, the marking layer can be seen through the nitride semiconductor layer. In the step (c), the position of the concave portion on the surface of the conductive layer is determined based on the position of the marking layer.

  In the nitride semiconductor light-emitting diode element of the present invention, when adhering to a substrate, a stem or the like, an extra adhesive is accommodated in a recess provided on the lower surface of a metal holding substrate. The side surface is not pushed up, and the n-type layer and the p-type layer are not short-circuited, and light emission from the side surface of the nitride semiconductor layer is not disturbed. In addition, when a plurality of elements are arranged side by side, it is possible to prevent a problem that an excessive adhesive short-circuits the elements.

  According to the method for manufacturing a nitride semiconductor light-emitting diode element of the present invention, since the concave portion is provided on the metal holding substrate by simple plastic working, the manufacturing cost of the element can be kept low.

  According to another method of manufacturing a nitride semiconductor light-emitting diode device of the present invention, the step of forming a metal holding substrate laminated with the nitride semiconductor layer by electroplating may provide a recess on the surface. Therefore, the manufacturing cost of the element can be kept low.

  FIG. 1 shows a cross-sectional view of a nitride LED according to an embodiment of the present invention. In the nitride LED 10 shown in this figure, 11 is a holding substrate made of Au and having a film thickness of about 50 μm, and a nitride semiconductor layer 12 is laminated thereon via an n-side ohmic electrode 13 made of Ti / Au. ing. The nitride semiconductor layer 12 includes an n-type GaN layer 12a, an InGaN active layer 12b, and a p-type GaN layer 12c in this order from the holding substrate 11 side. The n-side ohmic electrode 13 is in ohmic contact with the n-type GaN layer 12a. A p-side ohmic electrode 14 made of ITO is in ohmic contact with the p-type GaN layer 12c. A bonding pad 15 is electrically connected to the p-side ohmic electrode 14. Below the bonding pad 15, an opening is formed in the p-side ohmic electrode 14 so that a hole current is not injected into the InGaN active layer 12 c immediately below the opening. That is, it is configured such that no light emission occurs immediately below the center portion of the bonding pad 15. This is because even if light is emitted at this portion, it is blocked by the bonding pad 15 and cannot be efficiently taken out of the device.

  One of the features of the nitride LED 10 is that a recess 16 is provided on the lower surface of the holding substrate 11. In this example, the recess 16 is a dot-like depression and is provided below the bonding pad 15, particularly inside the projection area of the bonding pad 15 on the lower surface of the holding substrate 11. The shape in the opening part of the recessed part 16 seen from the lower surface side of the holding substrate 11 is circular, for example. The shape of the opening can be arbitrarily determined, and may be an ellipse, a triangle, a quadrangle, a pentagon, other polygons, or an indefinite shape. By providing the recess 16, even when the nitride LED 10 is bonded to the substrate or the stem using an adhesive such as Ag paste or solder, even if an extra adhesive is applied, the excess adhesive remains in the recess 16. Therefore, the problem of the adhesive rising up until the side surface of the element reaches the end surface of the nitride semiconductor layer 12 does not occur. Therefore, defects are less likely to occur in the process of mounting the elements, and the yield of the process is improved. In addition, since the amount of adhesive applied can be controlled more gently, it is possible to widen the interval between the quality check of the adhesive and the maintenance of the adhesive application device, thereby reducing the manufacturing cost. It becomes possible. Another advantage of providing the recess 16 is that the contact area between the adhesive and the holding substrate 11 increases, so that the adhesion strength of the nitride LED 10 to the substrate, stem, and the like increases. If this adhesive strength is large, when the nitride LED 10 is molded with a transparent sealing material to form a lamp, even if the sealing material expands or contracts due to a temperature change, the element moves and disconnects. Does not occur.

  The size of the recess 16 can be set such that the area of the opening is 1% to 50% of the area of the holding substrate 11 and the depth d is 5 μm to 50 μm, for example. However, as is apparent from the above description, the most preferable size (internal volume) of the recess 16 varies depending on the amount of adhesive used for fixing the element. That is, when the amount of adhesive used is small, the amount of excess adhesive when the adhesive is applied excessively is small, so that even if the size (internal volume) of the recess 16 is small, a sufficient effect is obtained. On the other hand, when the amount of adhesive used is large, the amount of excess adhesive when the adhesive is applied excessively increases, so the size (internal volume) of the recess 16 is also in accordance with it. If not set, the effect obtained will be small. Therefore, the preferred size of the recess 16 is not uniquely determined, but generally the above range is exemplified.

  The recess 16 may be a linear or curved groove in addition to the dot-like depression as in the case of the nitride LED 10, or may include a configuration in which a plurality of grooves intersect. Moreover, the groove | channel may open to the side surface of an element. The number of the concave portions 16 may be one or plural, and the size and shape of the concave portions in the case where a plurality of the concave portions are plural may be the same or different.

Next, a method for manufacturing the nitride LED 10 will be described.
(Epitaxial growth process)
As shown in FIG. 2A, a nitride semiconductor layer 12 is formed on a single crystal substrate 17 such as a sapphire substrate having a wafer size by MOVPE, molecular beam epitaxy (MBE), hydride vapor phase epitaxy. The growth is performed using a known vapor phase epitaxial growth method in this field, such as (HVPE method). Although not shown, a buffer layer may be interposed between the crystal substrate 17 and the nitride semiconductor layer 12. In the nitride semiconductor layer, it is preferable that an n-type layer is grown first, and a p-type layer is grown thereon.

(P-side electrode formation process)
After the formation of the nitride semiconductor layer 12, as shown in FIG. 2B, a p-side ohmic electrode 14 and a bonding pad 15 are sequentially formed on the upper surface of the p-type layer 12c.

(Growth substrate removal process)
As shown in FIG. 2C, the single crystal substrate 17 used in the epitaxial growth process is removed from the wafer on which the p-side electrode is formed. This step is performed after a holding film (not shown) that can be peeled off by heating is bonded to the upper surface of the wafer. Examples of a method for removing the single crystal substrate 17 include a method of abrasion by grinding and / or polishing, a wet etching method, a dry etching method, and a laser lift-off method. The wet etching method is suitable when the crystal substrate 17 is a Si substrate, and the laser lift-off method is suitable when the crystal substrate 17 is a sapphire substrate, but is not limited thereto.

(N-side electrode forming step)
As shown in FIG. 2D, the n-side ohmic electrode 13 is formed on the surface of the n-type GaN layer 12a exposed by removing the single crystal substrate 17 in the growth substrate removing step. Prior to the electrode formation, in order to clean the surface of the n-type GaN layer on which the electrode is to be formed, processes such as chemical mechanical polishing, wet etching, and dry etching can be appropriately performed. The n-side ohmic electrode 13 is not limited to a Ti / Au electrode, and any known electrode having ohmic properties with respect to an n-type nitride semiconductor, such as a Ti / Al electrode, can be used arbitrarily. The n-type ohmic electrode 13 may be formed of an oxide semiconductor such as ITO. In this example, the n-type ohmic electrode 13 is formed so as to cover the surface of the n-type GaN layer 12a, but is not essential. An n-type ohmic electrode and a highly reflective film may be partially formed on the surface of the n-type GaN layer.

(Plating process)
Electroplating is performed using the Ti / Au layer formed as the n-side ohmic electrode 13 as an underlayer, and an Au film is deposited to form the holding substrate 11 as shown in FIG. In the case of forming the holding substrate 11 by this method, the material of the holding substrate is not limited to Au, and it is preferably used as long as it is a metal used as an electrodeposited metal in electroforming. it can. Particularly preferred are Ni (silver), Cu (copper), Ag (silver), etc. in addition to Au. When the n-side ohmic electrode is a metal film, electroplating can be performed by using the n-side ohmic electrode itself as a plating underlayer, but forming a metal layer suitable as a plating underlayer on the n-side ohmic electrode by vapor deposition or the like. And you can go on. A barrier layer for preventing metal diffusion may be provided between the n-side ohmic electrode and the plating base layer formed thereon. For details of the plating base layer and the barrier layer, for example, JP-A-2004-47704 can be referred to.

(Dicing and recess formation process)
After the formation of the holding substrate 11, as shown in FIG. 3 (f), the wafer is divided by dicing so that the elements are formed into chips. Thereafter, a metal needle is abutted against the lower surface of the holding substrate 11 of the chip-like element fixed by a method such as affixing to an adhesive tape to form a recess 16 as shown in FIG. That is, the concave portion 16 is formed by plastic processing for plastically deforming the holding substrate 11. The reason why the concave portion 16 can be formed by such a simple plastic working is that the holding substrate 11 is made of metal. Therefore, the method of forming the holding substrate 11 is not limited to the above-described electroplating, and may be a vapor deposition method, an electroless plating method, a CVD method, a sputtering method, or the like. The holding substrate 11 may be a metal substrate manufactured separately and bonded to the nitride semiconductor layer 12 with an adhesive. The recess can be formed in various shapes by changing the shape of the tool used to plastically deform the lower surface of the holding substrate.

  The reason why the recess 16 is formed after dicing the element into chips is that it is difficult to know the position where the recess 16 should be formed in the wafer state because the holding substrate 11 made of Au is opaque. . On the other hand, if the element is formed into chips, the recess can be easily formed at a predetermined position on the lower surface of the holding substrate 11 of each chip. In particular, if the position of the bonding pad 15 is determined to be the central portion of the element, the concave portion 16 is reliably formed below the bonding pad 15 by abutting the needle against the central portion of the lower surface of the holding substrate 11 after being formed into a chip. can do. However, it is not essential to form the recess 16 after dicing. In addition, when the recess 16 is formed by this method, a region of the InGaN active layer 12b located immediately above the recess 16 may be damaged. However, in the nitride LED 10, p is below the bonding pad 15 in the nitride LED 10. Since the opening is provided in the side ohmic electrode 14 so that the InGaN active layer 12b does not emit light, even if the region of the InGaN active layer 12b is damaged, the effect on the light emission efficiency is small.

Next, another embodiment of the present invention will be described.
FIG. 4 is a cross-sectional view of a nitride LED according to another embodiment of the present invention. In the nitride LED 20 shown in FIG. 4, reference numeral 21 denotes a holding substrate made of Au and having a film thickness of about 50 μm, and a nitride semiconductor layer 22 is laminated thereon via a p-side ohmic electrode 24 made of Ni / Au. ing. The nitride semiconductor layer 22 includes a p-type GaN layer 22c, an InGaN active layer 22b, and an n-type GaN layer 22a in this order from the holding substrate 21 side. An n-side ohmic electrode 23 made of Ti / Au is in ohmic contact with the n-type GaN layer 22a. The n-side ohmic electrode 23 also serves as a bonding pad. The n-side ohmic electrode may be formed using a transparent material such as ITO so as to cover the surface of the n-type GaN layer, and a metal bonding pad may be formed thereon.

  In the nitride LED 20 shown in FIG. 4, two types of recesses 26 a and 26 b are provided on the lower surface of the holding substrate 21. The recess 26a is a dot-like recess, while the recess 26b is an annular groove surrounding the recess 26a. When the adhesive applied excessively at the time of mounting enters the recess 26a, which is an annular groove, moves toward the portion where there is little adhesive inside, so that the lower surface of the holding substrate 21 and the element are to be fixed. The distribution of the amount of adhesive existing between the surface of the substrate, stem, etc. is made uniform. Therefore, it becomes easy to fix the element so that the light emitting surface of the light emitting diode element is parallel to the surface of the substrate, the stem or the like. Such an effect of uniform distribution of the adhesive becomes more prominent when multiple annular grooves are formed on the lower surface of the holding substrate 21. In the nitride LED 20 as well, the recesses 26a and 26b prevent the problem of the adhesive rising on the side surfaces of the element and, of course, the effect of increasing the adhesive strength of the element to the substrate, stem, etc. is obtained. It is.

  For example, the sum of the areas of the openings of the recesses 26 a and 26 b can be 1% to 50% of the area of the holding substrate 21, and the depth d can be 5 μm to 50 μm. Also in this embodiment, the most preferable size (internal volume) of the recesses 26a and 26b varies depending on the amount of adhesive used for fixing the element.

Next, a method for manufacturing the nitride LED 20 will be described.
(Epitaxial growth process)
As shown in FIG. 5A, a nitride semiconductor layer 22 is formed on a single crystal substrate 27 such as a sapphire substrate having a wafer size by MOVPE, molecular beam epitaxy (MBE), hydride vapor phase epitaxy. Using the vapor phase epitaxial growth method such as (HVPE method), the n-type GaN layer 22a is grown in order.

(Marking layer forming process)
After the formation of the nitride semiconductor layer 22, a marking layer S made of Ti (titanium) is formed on the surface of the p-type GaN layer 22c. The marking layer S is formed at a boundary portion (a region that will be on a dicing line in a later process) between a plurality of element portions to be formed on the wafer. The purpose of providing the marking layer S is that the positions of the recesses 26a and 26b provided on the surface of the holding substrate 21 are arranged from the nitride semiconductor layer 22 side even after the holding substrate 21 made of non-translucent Au is formed. This is to make it easy to know. In other words, in the n-side electrode forming process described later, the position where the n-side ohmic electrode 23 should be formed and the region where the nitride semiconductor layer 22 should be etched can be easily determined.

  The marking layer S may be any layer that can be seen through the nitride semiconductor layer 22. Therefore, the marking layer S is preferably formed of a material having a color different from that of the p-side ohmic electrode 24. This is the reason why the marking layer S is formed of Ti in this example. The marking layer S can also be formed of a transparent material such as silicon oxide. In this case, if the color of the p-side ohmic electrode 24 and the color of the plating base layer formed on the marking layer S in a later step are different, the position of the marking layer S can be visually recognized. Alternatively, the transparent marking layer S is formed thick enough to focus only on the lower surface of the plating base layer formed on the marking layer S when observed through an optical microscope through the nitride semiconductor layer 22. Then, the position of the marking layer S can be visually recognized.

  Further, when the p-side ohmic electrode 24 is formed of a transparent material such as ITO, the marking layer S and the plating base layer formed on the p-side ohmic electrode 24 in a later step are made different colors. For example, the position of the marking layer S can be visually recognized through the nitride semiconductor layer 22. As another method in this case, instead of providing the marking layer S, a region where a plating base layer is directly formed on the p-type GaN layer 22c without the p-side ohmic electrode 24 as a marking region is predetermined. And the bottom surface of the plating base layer formed in the marking region (the plating base layer formed directly on the p-type GaN layer 22c) when observed through an optical microscope through the nitride semiconductor layer 22. If the transparent p-side ohmic electrode 24 is formed thick enough to focus only on the lower surface), the position of the marking region can be visually recognized through the nitride semiconductor layer 22. This can be used as a reference when determining the formation position of the n-side ohmic electrode 23.

(P-side electrode formation process)
Next, as shown in FIG. 5C, the p-side ohmic electrode 24 is formed on the upper surface of the p-type layer 22c so as not to cover the marking layer S. This is to make the marking layer S visible when the mask layer M is formed in the next step. Therefore, the marking layer S and the p-side ohmic electrode 24 need to have different colors so that they can be identified even when viewed from the upper surface side. The order of the p-side electrode forming step and the marking layer forming step may be reversed. Since the p-side ohmic electrode 24 is used as a plating underlayer in a later step, a metal layer suitable for the plating underlayer may be provided as the uppermost layer as a laminated structure.

(Plating process)
When the p-side ohmic electrode 24 is formed, an insulating mask M made of a photoresist is finally formed on the surface of the holding substrate 21 on the surface of the p-side ohmic electrode 24 as shown in FIG. It forms in the pattern of the recessed part made into. At that time, the position of the mask M is determined based on the position of the marking layer S. Here, when the marking layer S is made of a material that is not suitable as a plating base layer, the surface of the marking layer S is also covered with a mask layer M as shown in FIG. Next, as shown in FIG. 6E, the p-side ohmic electrode 24 is used as a plating base layer, and an Au layer 21-1 is formed by electroplating on the exposed portion of the surface not covered with the mask M. Form.

  When the mask M is lifted off after the formation of the Au layer 21-1, as shown in FIG. 6 (f), on the p-type layer 22c, [the p-side ohmic electrode 24 and the Au layer 21-1 are formed. , A conductive layer having a concave portion of the pattern reflecting the pattern of the mask M] is obtained.

  Next, electroplating is performed again using the conductive layer as a plating base layer to form an Au layer 21-2. Prior to this electroplating, a metal layer suitable for the plating underlayer may be formed by vapor deposition or the like so as to cover the entire upper surface of the wafer including the surface of the marking layer S. Since the concave portion reflecting the concave pattern on the surface of the plating base layer is formed on the surface of the Au layer 21-2 formed by electroplating, finally, as shown in FIG. The holding substrate 21 having the recesses 26a and 26b on the surface, which is composed of the layer 21-1 and the Au layer 21-2, is obtained.

(Growth substrate removal process)
Next, as shown in FIG. 7H, the single crystal substrate 27 used in the epitaxial growth process is removed from the wafer after the holding substrate 21 is formed by the plating process. Examples of the method for removing the single crystal substrate 27 include a method of abrasion by grinding and / or polishing, a wet etching method, a dry etching method, and a laser lift-off method.

(N-side electrode forming step)
As shown in FIG. 7I, an n-side ohmic electrode 23 is formed on the surface of the n-type GaN layer 22a exposed by removing the single crystal substrate 27 in the growth substrate removing step. At this time, since the marking layer S that can be seen through the nitride semiconductor layer 22 is provided, the n-side ohmic electrode 23 is to be formed even though the holding substrate 21 is opaque (this example Then, it can be easily known from the side of the nitride semiconductor layer 22) immediately above the recess 26 a on the lower surface of the holding substrate 21.

  In order to clean the surface of the n-type GaN layer 22a prior to the formation of the n-side ohmic electrode 23, processes such as chemical mechanical polishing, wet etching, and dry etching can be appropriately performed. In order to promote light extraction from the surface of the n-type GaN layer 22a, a treatment for roughening the surface may be performed. In this example, before or after the n-side ohmic electrode 23 is formed, the nitride semiconductor layer 22 in a region between adjacent elements on the wafer is removed by etching, so that the upper surface of the holding substrate 21 is exposed. Yes.

(Dicing process)
After forming the n-side ohmic electrode 23, as shown in FIG. 7 (j), the holding substrate 21 is cut by dicing at the position where the marking layer S is formed, and the wafer is divided into chips.

  Although the present invention has been described with reference to specific embodiments, the present invention is not limited to these specific examples, and various modifications can be made within a range in which the effects of the invention can be obtained.

1 is a cross-sectional view of a nitride semiconductor light emitting diode device according to an embodiment of the present invention. FIG. 6 is a cross-sectional view for illustrating a manufacturing step for the nitride semiconductor light-emitting diode element shown in FIG. 1. FIG. 6 is a cross-sectional view for illustrating a manufacturing step for the nitride semiconductor light-emitting diode element shown in FIG. 1. 1 is a cross-sectional view of a nitride semiconductor light emitting diode device according to an embodiment of the present invention. FIG. 5 is a cross-sectional view for illustrating a manufacturing step for the nitride semiconductor light-emitting diode element shown in FIG. 4. FIG. 5 is a cross-sectional view for illustrating a manufacturing step for the nitride semiconductor light-emitting diode element shown in FIG. 4. FIG. 5 is a cross-sectional view for illustrating a manufacturing step for the nitride semiconductor light-emitting diode element shown in FIG. 4. It is sectional drawing of the conventional nitride semiconductor light-emitting-diode element.

Explanation of symbols

10, 20 Nitride semiconductor light-emitting diode element 11, 21 Metal holding substrate 12, 22 Nitride semiconductor layer 13, 23 n-side ohmic electrode 14, 24 p-side ohmic electrode 15 Bonding pads 16, 26a, 26b Recess

Claims (10)

  1.   A nitride semiconductor light-emitting diode element having a metal holding substrate and a nitride semiconductor layer laminated thereon, and having a recess formed on a lower surface of the holding substrate.
  2.   The nitride semiconductor light-emitting diode element according to claim 1, wherein the recess includes a dot-like depression.
  3.   The bonding pad is formed on the nitride semiconductor layer, and a concave portion that is a dot-like depression is provided inside the projected area of the bonding pad on the lower surface of the holding substrate. Nitride semiconductor light emitting diode device.
  4.   The nitride semiconductor light-emitting diode device according to claim 1, wherein the recess includes an annular groove.
  5.   The nitride semiconductor light-emitting diode device according to claim 4, wherein the recess includes a plurality of annular grooves.
  6.   The nitride semiconductor light-emitting diode device according to any one of claims 1 to 5, wherein a depth of the concave portion is 5 µm to 50 µm.
  7.   A method for manufacturing a nitride semiconductor light-emitting diode element, comprising a metal holding substrate and a nitride semiconductor layer laminated thereon, comprising a step of forming a recess by plastic working on the lower surface of the holding substrate A method for producing a nitride semiconductor light-emitting diode device, comprising:
  8.   The manufacturing method of Claim 7 which performs the process of providing the said recessed part, after forming the laminated body by which the nitride semiconductor layer was laminated | stacked on the metal holding substrate which has chip size.
  9. (A) forming a nitride semiconductor layer on the single crystal substrate using a vapor phase epitaxial growth method;
    (B) separating the nitride semiconductor layer from the crystal substrate;
    (C) forming a conductive layer having a recess on the surface as an underlayer for electroplating on any surface of the nitride semiconductor layer;
    (D) a step of depositing a metal film by electroplating using the conductive layer as a base layer to form a metal holding substrate having a recess on the surface;
    A method for manufacturing a nitride semiconductor light-emitting diode device, comprising:
  10. Before the step (c), a marking layer is formed on the surface of the nitride semiconductor layer on the side where the conductive layer is to be formed so that the position can be seen through the nitride semiconductor layer. The manufacturing method according to claim 9, wherein, in the step (c), the position of the concave portion on the surface of the conductive layer is determined based on the position of the marking layer.

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