JP2008053550A - Substrate processing apparatus and method, and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique for avoiding or reducing an adverse effect on a device at the side of an atmosphere conveyance chamber when conveying a substrate subjected to processing in a vacuum processing chamber to the atmosphere conveyance chamber. <P>SOLUTION: A post processing chamber for post processing with the atmosphere is provided adjacently in a load lock chamber, thus removing products generated on a substrate in the post processing chamber before carrying the substrate to the atmosphere conveyance chamber. The substrate is carried into or out of the post processing chamber by a carrying means in the atmosphere conveyance chamber. The post processing chamber is partitioned from the atmosphere conveyance chamber by a partition wall, a slit-like opening required for passing the carrying means and the substrate is formed at the partition wall, and the substrate is carried in and out via the opening by the carrying means. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  TECHNICAL FIELD The present invention relates to a technical field for avoiding or reducing that a product generated on a substrate by vacuum processing touches the atmosphere and adversely affects the atmosphere transport chamber when the substrate subjected to vacuum processing is transported to the atmosphere transport chamber. .

  In the manufacture of a semiconductor device, there is a step of subjecting a substrate to be processed, for example, a semiconductor wafer (hereinafter referred to as a wafer) to plasma processing such as vacuum processing such as etching processing. A vacuum processing apparatus called a chamber system is used.

  Among these vacuum processing apparatuses, those having a vacuum processing chamber and an atmospheric transfer chamber are known. An example thereof is shown in FIG. 11, which includes a FOUP mounting table 10 on which a FOUP (Front Opening Unified Pod), which is a transport container storing a plurality of, for example, 25 wafers, and a transport arm for transporting the wafers, A transfer module (TM) 11 in a vacuum atmosphere and four process modules (PM) 12a, 12b, 12c, and 12d that are arranged around the transfer module (TM) 11 and perform predetermined processing on the wafer in a vacuum atmosphere And a transfer mechanism having a transfer arm for transferring the wafer, and is disposed between a loader module (LM) 14 in an air atmosphere, the loader module 14 and the transfer module 11, and a vacuum atmosphere and a normal pressure atmosphere. And two load lock modules (LLM) 15a and 15b that can be switched to each other, and the loader module It is known that an orienter (ORT) (not shown) is provided adjacent to the joule 14 and pre-aligns the position of the wafer. Note that G11 to G14 in FIG. 11 are gate valves.

  The wafer transfer path in the vacuum processing apparatus will be briefly described. The unprocessed wafer placed on the FOUP mounting table 10 is transferred in this order: LM → ORT → LLM → TM → PM. Then, for example, after the etching process is performed in a predetermined processing gas atmosphere in the process module 12a (12b, 12c, 12d), the processed wafer is transferred in this order from TM → LLM → LM → Hoop mounting table 10. .

  By the way, when the processed wafer is returned to the hoop mounting table 10, the gas generated by the reaction of by-products on the processed wafer with moisture in the atmosphere condenses on the wafer before the processing, May lead to device defects. As a measure against this cross contamination, the loader module 14 is provided with a purge storage 13 (chain line) for temporarily storing processed wafers in an air atmosphere.

  However, when the processed wafer is transferred from the load lock module 15a (15b) to the purge storage 13 via the loader module 14, there are the following problems. As an example, in the process module 12a (12b, 12c, 12d), for example, a processing gas such as HBr gas or Cl2 gas may be turned into plasma and etching may be performed on the polysilicon film formed on the wafer. At this time, products (silicon bromide, silicon chloride, etc.) associated with the etching process are generated on the wafer. When this wafer is carried into the loader module 14 in the atmospheric atmosphere, for example, the above-mentioned silicon bromide, silicon chloride, etc. react with moisture in the atmosphere, and are scattered as corrosive gas such as hydrogen bromide, hydrogen chloride, etc. These corrosive gases further react with ammonia present in minute amounts in the atmosphere to form fine particles such as ammonium bromide and ammonium chloride, and diffuse into the loader module 14. As a result, the metal portion of the loader module 14, for example, the wall portion of the transfer chamber or the transfer mechanism may be corroded, and the corroded portion may be rubbed by, for example, mechanical operation to cause metal contamination. Further, there is a concern that the fine particles adhere to the loader module 14 and cause particle contamination.

  On the other hand, in Patent Document 1, entrained deposits attached to a sample by a plasma processing apparatus react with moisture in the atmosphere to generate new deposits or corrode surrounding structures. Then, after the gas is introduced into the load lock chamber under the negative pressure from the atmosphere side opening, the gas is introduced from the gas introduction port provided in the load lock chamber, and then the atmosphere side gate. The sample is carried in and out while opening the valve and continuing the introduction of gas from the gas introduction port and exhausting the atmosphere in the cover from the exhaust port provided in the cover while flowing the gas from the gas introduction port of the cover. It is described. However, even if it is attempted to remove deposits by forming an air flow in the load lock chamber, the residence time of the wafer in the load lock chamber is extremely limited in terms of throughput. This is a technique that cannot be used in actual machines.

Japanese Patent Laid-Open No. 2005-50852

  The present invention has been made in view of such circumstances, and its purpose is to avoid or reduce adverse effects on the apparatus on the atmosphere transfer chamber side when the substrate processed in the vacuum processing chamber is transferred to the atmosphere transfer chamber. It is to provide a technology that can do.

The substrate processing apparatus of the present invention, a mounting table for mounting a transport container storing a plurality of substrates,
A vacuum processing chamber for processing the substrate in a vacuum atmosphere;
A load lock chamber in which a substrate is transferred to and from this vacuum processing chamber, and can be switched between a vacuum atmosphere and a normal pressure atmosphere,
A post-processing chamber that is provided adjacent to the load lock chamber and performs post-processing in an air atmosphere to remove a product generated by vacuum processing on the processed substrate;
And an atmospheric transfer chamber provided between the load lock chamber and the mounting table and provided with a transfer means for transferring the substrate in an air atmosphere.

  It is preferable that loading and unloading of the substrate with respect to the post-processing chamber is performed by transfer means of the atmospheric transfer chamber. In this case, it is more preferable to employ the following configuration.

(1) The post-processing chamber and the atmospheric transfer chamber are partitioned by a partition wall, and a slit-like opening necessary for the passage of the transport means and the substrate is formed in the partition wall. Configuration (2) Configuration in which a gate valve provided between the atmospheric transfer chamber and the load lock chamber also serves as a gate valve between the load lock chamber and the post-processing chamber (3) The transfer port is bent along the length direction, and the gate valve is bent corresponding to the shape of the transfer port. The above-mentioned “bend” is a case where it is bent in a mountain shape and bent in an arc shape. Including any case of being curved (curved).

  Furthermore, in the present invention, as the load lock chamber, a first load lock chamber and a second load lock chamber are provided symmetrically on the back side of the atmospheric transfer chamber, and the post-processing chamber is the first load lock chamber. It is preferable to adopt a configuration provided in the middle of the second load lock chamber. In addition, the post-processing chamber can be configured to include, for example, a mounting unit on which a substrate can be mounted in a plurality of stages. In this case, the mounting unit in the post-processing chamber is configured to be moved up and down by a lifting unit. It is preferable. The post-processing chamber is provided, for example, for promoting the reaction between the product on the substrate generated during the processing in the vacuum processing chamber and the moisture in the atmosphere.

A substrate processing method according to the present invention includes a step of processing a substrate in a vacuum processing chamber,
Thereafter, a step of transporting the substrate from the vacuum processing chamber to a load lock chamber in a vacuum atmosphere;
A step of switching the atmosphere in the load lock chamber from a vacuum atmosphere to a normal pressure atmosphere;
Next, a step of transporting the substrate in the load lock chamber to a post-processing chamber provided adjacent to the load lock chamber;
In the post-treatment chamber, performing a post-treatment on the substrate in an air atmosphere in order to remove a product generated by vacuum treatment;
The substrate in the post-processing chamber is placed in an atmospheric transfer chamber provided with a transfer means for transferring the substrate in an atmospheric atmosphere, interposed between a mounting table for mounting a transport container storing a plurality of substrates and the load lock chamber. And a step of conveying.
Another invention is a storage medium for storing a program that is used in a substrate processing apparatus for processing a substrate in a vacuum atmosphere and operates on a computer,
The program has a group of steps so as to execute the substrate processing method of the present invention.

  In the present invention, the product generated on the substrate by performing the vacuum processing is removed in the post-processing chamber provided adjacent to the load lock chamber before the substrate is transferred to the atmospheric transfer chamber. Therefore, it is possible to avoid or reduce adverse effects such as corrosion and adhesion of fine particles to the atmospheric transfer chamber (such as the wall of the transfer chamber and the transfer mechanism) caused by the product. If the substrate is carried into and out of the post-processing chamber by the transfer means of the atmospheric transfer chamber, there is no need to provide a dedicated transfer means for the post-processing chamber, which increases the complexity and cost of the apparatus. Can be suppressed. In this case, the transfer efficiency can be improved by partitioning the atmosphere transfer chamber and the load lock chamber and the load lock chamber and the post-processing chamber with a common gate valve.

  An embodiment of a substrate processing apparatus according to the present invention will be described. FIG. 1 is a schematic plan view of a substrate processing apparatus according to this embodiment, and FIG. 2 is a schematic perspective view showing a main part of the substrate processing apparatus. In FIG. 1, reference numeral 2 denotes a single-wafer type substrate processing apparatus that transfers a semiconductor wafer (hereinafter referred to as a wafer) W, which is a substrate to be processed, one by one to perform a predetermined process. The substrate processing apparatus 2 includes a planar vertically long hexagonal transfer module (TM) 20 and two process modules (PM) 30a disposed on one vertical side surface (Y-axis direction in FIG. 1) of the transfer module 20. , 30b, two process modules 30c, 30d arranged on the other vertical side surface (Y-axis direction in FIG. 1) of the transfer module 20, and one lateral slope of the transfer module 20 (in FIG. 1) And two load lock modules (LLM) 40a and 40b arranged in the X-axis direction, and a loader module 50 provided so as to be aligned with the load lock module 40a and the load lock module 40b. . The load lock module 40a corresponds to a first load lock chamber, and the load lock module 40b corresponds to a second load lock chamber.

  The process modules 30a to 30d supply wafer mounting tables 31a to 31d for mounting wafers in a vacuum processing chamber, electrodes for generating plasma, and a processing gas such as hydrogen bromide (HBr) gas to the vacuum processing chamber. For example, an etching process for etching, for example, a polysilicon film formed on the wafer W is performed by applying a high frequency power to the electrode to convert the process gas into plasma. It is like that.

  Gate valves G1, G2, G3, and G4 are provided at connecting portions between the transfer module 20 and the process modules 30a to 30d, respectively. The transfer module 20 includes a transfer arm unit 21 including two SCARA arm type transfer arms in a vacuum transfer chamber. The transfer arm unit 21 moves along a guide rail 22 arranged in the longitudinal direction (Y-axis direction in FIG. 1) in the transfer module 20, and each process module 30a to 30d or load lock module 40a, 40b. The wafer W is transferred between the two.

  The loader module 50 has a horizontally long box shape, and a fan filter unit (FFU) 55 that combines a fan and a filter is attached to the ceiling as shown in FIG. An exhaust fan unit 56 is installed. The exhaust fan unit 56 is connected to a factory exhaust system equipped with an abatement device, and a clean air descending airflow is formed between the FFU 55 and the exhaust fan 56. A slit-like opening 53 is formed in the partition wall 57 on the back surface of the loader module 50.

  The loader module 50 has a transfer arm mechanism 51 disposed therein, and three wafer loading / unloading ports serving as wafer W loading / unloading ports on the front surface corresponding to a hoop mounting table 70 to be described later, as shown in FIG. 51a, 51b, 51c are formed. The transfer arm mechanism 51 includes an X-axis moving unit that can reciprocate by an electromagnet drive along a guide rail 52 that is disposed in the longitudinal direction in the loader module 50, and a Z that can be moved up and down on the X-axis moving unit. It has a swivel that can be swiveled horizontally via an axis moving part, and an articulated transfer arm 54 that is provided on the swivel and that can expand and contract in the radial direction or the horizontal direction. As shown in FIG. 2, the transfer arm 54 is formed in a fork shape, for example, as shown in FIG. 2, and supports the peripheral edge of the lower surface of the wafer W.

  The load lock modules 40a and 40b are interposed between the back surface portion of the loader module 50 and the transfer module 20, and are symmetrically arranged on the left and right. The load lock modules 40a and 40b, the transfer module 20, Are connected to gate valves G5 and G6, respectively. The load lock modules 40a and 40b have wafer mounting tables 41a and 41b for mounting the wafer W, and the pressure in the load lock modules 40a and 40b is determined by a predetermined vacuum atmosphere and an atmospheric pressure such as nitrogen gas. It is comprised so that it can switch between atmospheric pressure atmospheres.

  The load lock modules 40a and 40b have a pentagonal cross-sectional shape, and a wafer W transfer port 42a (to be described later) along two sides of the five sides of the pentagon facing each other between the load lock modules 40a and 40b. 42b) is formed, and gate valves G7 and G8 for opening and closing the transfer port 42a (42b) are provided. That is, these gate valves G7 and G8 are bent across two sides of the pentagon as shown in FIGS. 1 and 2, for example, are formed in a square shape, and the load lock module 40a (40b), the loader module 50, It has a role of partitioning with a purge storage (PST) 60 described later. The gate valves G7 and G8 also serve as gate valves between the load lock module 40a (40b) and a purge storage (PST) 60 described later. The configuration and opening / closing operation of the gate valves G7 and G8 will be described later.

  In the substrate processing apparatus 2, a region surrounded by the partition wall 57 on the back surface of the loader module 50, each of the two sides of the load lock modules 40 a and 40 b and one side of the transfer module 20 is a purge storage 60 which is a post-processing chamber. The processing chamber main body is formed. The purge storage 60 is generated by a plasma process, which is a vacuum process, and reacts with a moisture in the atmosphere by reacting a product that adversely affects the device on the loader module 50 side when exposed to the atmospheric atmosphere, so that a corrosive gas is scattered in advance. Is provided in order to implement a process (post-process).

  Inside the purge storage 60, as shown in FIGS. 2 and 3, a plurality of substrate mounting portions 63 for mounting four wafers W in this example in a shelf shape are arranged. The board mounting portion 63 includes a base 64 laid on the floor, a support 65 provided on one end of the support 64, and a plurality of arrays arranged at predetermined intervals on the upper end of the support 65. In this example, there are four support bases 66 and an elevating mechanism 67 for elevating the column 65. Further, as shown in FIG. 2, the support base 66 is formed in a U-shape, for example, so that the transport arm 54 can pass through a central space 66a. The elevating mechanism 67 plays a role of setting the support base 66 selected from the four-stage support base 66 to a height level corresponding to the height level of the transfer position of the transfer arm 54.

  An exhaust pipe 68 is connected to the floor of the purge storage 60, and the lower end side of the exhaust pipe 68 is connected to a factory exhaust system equipped with a detoxifying device. Thus, the purge storage 60 exhausts the clean air flowing from the loader module 50 side through the slit-shaped opening 53 to the factory exhaust system via the exhaust pipe 68.

  Further, on the front side of the loader module 50, a FOUP mounting table on which a FOUP (Front Opening Unified Pod), which is a transport container storing a plurality of wafers, for example, 25 wafers, is placed via the wafer loading / unloading ports 51a to 51c. 70a to 70c are respectively arranged. Further, an orienter (ORT) 71 for pre-aligning the position of the wafer W loaded into the loader module 50 from the hoop mounting tables 70a to 70c is disposed on the left side surface portion of the loader module 50 in FIG.

  Here, the gate valves G7 and G8 provided on the wall surfaces of the load lock modules 40a and 40b will be described in detail. As shown in FIG. 4, the gate valves G <b> 7 and G <b> 8 include a valve body 80 formed in a U-shape, a valve body support rod 81 for supporting the valve body 80, and a lower end of the valve body support rod 81. And a valve body drive mechanism 82 laid on the floor surface of the purge storage 60. An O-ring 83 that is a resin ring-like member is provided on the inner side surface of the valve body 80 in order to improve the adhesion between the wall surfaces of the load lock modules 40a and 40b and the valve body 80. The opening / closing operation of the gate valve G7 (G8) will be described with reference to FIG. 5. When the gate valve G7 (G8) is closed, first, the valve body drive mechanism 82 is used to bring the valve body 80 to a predetermined height position. Raise (see FIG. 5A). Subsequently, the valve body 80 is tilted by the valve body driving mechanism 82 to hermetically seal the horizontally long transport opening 42a (42b) formed on the wall surface of the load lock modules 40a and 40b (see FIG. 5B). ). When the gate valve G7 (G8) is opened, an operation opposite to the above-described operation is performed.

  As the gate valve G7 (G8), a valve having the structure shown in FIG. 6 may be used. In this example, a downward sealing surface is formed at the opening edge of the transfer port 42a (42b) of the load lock module 40a, 40b, and an upward sealing surface is formed on the gate valve G7 (G8), and these are adhered to each other vertically. To obtain an airtight structure. That is, as shown in FIG. 7, a downward seal surface 95 located on the inner side of the load lock module 40a (40b) from the opening surface is formed at the lower edge of the transport port 42a (42b), and the transport port 42a ( 42b) is formed with a downward seal surface 94 protruding from the opening surface to the outside of the load lock module 40a (40b) from the opening surface, and further downwardly connecting these seal surfaces to the side edge of the transfer port 42a (42b). The sealing surface (not shown in FIG. 7) is formed. On the other hand, as shown in FIG. 6, on the upper edge and the lower edge of the curved valve body 90, upward seal surfaces 91 and 92 are formed at positions facing the downward seal surfaces 94 and 95, respectively. An upward seal surface 97 that connects the surfaces 91 and 92 is formed. The seal surfaces 91, 92, and 97 are provided with O-rings 93 that are resinous ring-shaped members. Then, as shown in FIG. 7, by raising the valve body 90, the downward seal surfaces 94, 95 on the conveying port 42a (42b) side and the upward seal surfaces 91, 92, 97 on the valve body 90 side are in close contact with each other. Thus, the horizontally long openings 42a (42b) formed on the wall surfaces of the load lock modules 40a and 40b are hermetically sealed (see FIG. 7B).

The substrate processing apparatus 2 includes a control unit 100. The control unit 100 includes, for example, a computer, and includes an operation sequence of the transfer arm unit 21, the transfer arm mechanism 51, the lifting mechanism 67, and the gate valves G1 to G8. A sequence of vacuum processing performed in the process modules 30a to 30d is controlled by a computer program. The program is stored in a storage medium such as a hard disk, a flexible disk, a compact disk, a magnet optical disk (MO), or a memory card, and downloaded from the storage medium to the control unit 100. Next, the substrate processing apparatus described above The operation of 2 will be described. First, when a hoop containing the wafer W from the outside is placed on, for example, the hoop placement table 70a, the lid of the hoop is removed, and the unprocessed wafer W is taken out by the transfer arm 54 through the wafer carry-in / out port 51a. And is loaded into a loader module (LM) 50. The unprocessed wafer W is transferred to the orienter (ORT) 71 through the loader module (LM) 50, and the position of the wafer W is aligned by the orienter (ORT) 71. Subsequently, the wafer W is taken out from the orienter (ORT) 71 by the transfer arm 54, and the wafer W is transferred to the load lock module (LLM) 40 a through the loader module (LM) 50.

  Here, the state in which the unprocessed wafer W is transferred from the loader module (LM) 50 to the load lock module (LLM) 40a by the transfer arm 54 will be described with reference to FIG. First, the transfer arm mechanism 51 is disposed, for example, in front of the load lock module (LLM) 40a, and the transfer arm 54 is extended so that the transfer arm 54 is formed on the wall surface of the load lock module 40a. 42a enters the load lock module (LLM) 40a (see FIG. 8B). For convenience of explanation in FIG. 8, the wafer W placed on the transfer arm 54 is indicated by a one-dot chain line.

  Subsequently, when the unprocessed wafer W is mounted on the wafer mounting table 41a of the load lock module (LLM) 40a, the wafer W is taken out by the transfer arm unit 21 and loaded into the transfer module (TM) 20. Then, the unprocessed wafer W passes through the transfer module (TM) 20 and is transferred to, for example, a process module (PM) 30a, and the process module (PM) 30a is subjected to, for example, an etching process which is a plasma process.

  After the processing is completed, the processed wafer W is taken out from the process module (PM) 30a by the transfer arm unit 21, and the wafer W is transferred to the load lock module (LLM) 40a through the transfer module (TM) 20. . Subsequently, a vent valve (not shown) is opened, for example, nitrogen gas is taken into the load lock module (LLM) 40a from an inert gas supply source (not shown), and the inside of the load lock module (LLM) 40a is switched from a vacuum atmosphere to a normal pressure atmosphere. Thereafter, the gate valve G7 is opened, and the processed wafer W is taken out from the load lock module (LLM) 40a by the transfer arm 54 and transferred to the purge storage (PST) 60.

  Here, how the processed wafer W is transferred from the load lock module (LLM) 40a to the purge storage (PST) 60 by the transfer arm 54 will be described with reference to FIG. 9. For example, the transfer arm mechanism 51 is load-locked. The load lock module (LLM) is arranged in front of the module (LLM) 40a, extends the transfer arm 54, and passes through a slit-like opening 53 formed in the partition wall 57 on the back side of the loader module (LM) 50. The wafer W enters the wafer 40a, lifts the wafer W from the wafer mounting table 41a by a lift pin (not shown) embedded in the wafer mounting table 41a, and lifts the transfer arm 54 from below the wafer W, whereby the wafer is transferred to the transfer arm 54. W is delivered. Next, the transfer arm 54 is slightly retracted, the wafer W is pulled out to the near side, the transfer arm 54 is slightly rotated clockwise, and the transfer arm 54 is further moved in the X-axis direction so that the holding portion of the transfer arm 54 is moved. The substrate mounting portion 63 is stopped at a position that fits in the upper region of the space surrounded by the U-shaped support base 66. Thereafter, the support base 66 is raised to hold the peripheral edge of the wafer W on the transfer arm 54, and then the transfer arm 54 is retracted and positioned on the front side of the support base 66, and then extended again. Then, the support base 66 is moved up and down to receive another wafer W at the substrate mounting portion 63 that has already been processed. Note that the left and right widths of the transfer arm 54 are slightly smaller than the left and right widths of the space 66a surrounded by the U-shaped portion of the support table 66 so that the transfer arm 54 and the support table 66 do not interfere planarly. ing. In this case, the support table 66 is lowered and the wafer W placed on the support table 66 is transferred to the transfer arm 54. The transfer arm 54 returns the wafer W into, for example, a FOUP on the FOUP mounting table 70a, and receives, for example, the next wafer W from the FOUP and transfers it to the load lock module (LLM) 40a. For convenience of explanation in FIG. 9, the wafer W placed on the transfer arm 54 is indicated by a one-dot chain line.

  Next, the processing of the wafer W in the purge storage (PST) 60 will be described. The inside of the purge storage (PST) 60 is always exhausted by the exhaust pipe 68, and a partition on the back surface of the loader module (LM) 50 by the negative pressure. The air in the loader module (LM) 50 flows through the slit-shaped opening 53 of the wall 57. On the other hand, for example, silicon halide (for example, silicon bromide), which is a product, is attached to the wafer W by the plasma etching process, and this silicon halide reacts with moisture in the atmosphere to generate hydrogen bromide gas. The hydrogen bromide gas reacts with a small amount of ammonia in the atmosphere to produce fine particles of ammonium bromide. The hydrogen bromide gas, which is a corrosive gas, and the fine particles are exhausted from the exhaust pipe 68 along the exhaust flow. The hydrogen bromide gas is removed by a chemical filter (not shown) provided in the middle of the exhaust path.

  By the way, the transfer sequence of the wafer W described above depends on the number of process modules (PM) to be used, the processing time in each of the process modules (PM) 30a to 30d, and the above-described post-processing time in the purge storage (PST) 60. It will be decided. In this example, when etching is performed in parallel using, for example, four process modules (PM) 30a to 30d, and the residence time in each process module (PM) is t1, the time required for the post-processing is 3/4.・ We expect t1. That is, the timing at which the processed wafer W is loaded into one of the load lock modules (LLM) 40a and 40b is 1/4 · t1, and therefore, each wafer W is transferred to the purge storage (PST) by 3/4 · t1. Three stages of support bases 66 are prepared so that t1 stays, and one stage as a buffer is provided to provide a total of four stages of support bases 66. Note that the processing time given here is merely an example for a schematic explanation.

  As a transfer sequence, loading and unloading of the load lock modules (LLM) 40a and 40b may be prioritized over unloading of the wafer W that has been post-processed by the purge storage (PST) 60. For example, after the wafer W is transferred from the load lock module (LLM) 40 a to the purge storage (PST) 60, even if the wafer W that has been post-processed already exists in the purge storage (PST) 60, The next wafer W is loaded into the empty load lock module (LLM) 40a from the hoop on the mounting table 70a, and then the wafer W in the purge storage (PST) 60 is placed on the hoop mounting table 70a. You may make it return to a hoop.

  Further, both of the two load lock modules (LLM) 40a and 40b may be used for both loading of unprocessed wafers W and unloading of processed wafers W. However, the load lock modules (LLM) 40a and 40b may be combined. One of them may be dedicated for loading unprocessed wafers W, and the other may be dedicated for unloading processed wafers W.

  According to the above-described embodiment, the wafer W that has been etched by plasma is placed in an air atmosphere in the purge storage (PST) 60 provided adjacent to the load lock modules (LLM) 40a and 40b, and is etched. The produced product is reacted with moisture in the atmosphere to disperse corrosive gas, and then the wafer W is transferred into the loader module (LM) 50. Accordingly, since generation of fine particles due to the reaction between the product on the wafer W and moisture is suppressed in the loader module (LM) 50, the loader module (LM) 50, that is, the atmospheric transfer chamber (in the atmospheric transfer chamber) Corrosion of the wall and the transport mechanism is suppressed, and adhesion of fine particles to the member is suppressed, so that particle contamination can be reduced.

  Further, since the wafer W is loaded into and unloaded from the purge storage (PST) 60 by the transfer arm 54 in the loader module (LM) 50 which is an atmospheric transfer chamber, the purge storage (PST) 60 is loaded into the load lock module (LLM). It is not necessary to add a transport system by providing it adjacent to 40a and 40b. Further, since the purge storage (PST) 60 is provided between the load lock modules (LLM) 40a and 40b, the load lock modules (LLM) 40a and 40b are loaded after the wafer W is loaded into and unloaded from the purge storage (PST) 60. Since the wafer W can be transferred immediately to any of the above, high throughput can be obtained and the apparatus can be made compact.

  In addition, since the substrate mounting portion 63 provided in the purge storage (PST) 60 can be moved up and down, it is necessary for the transfer of the wafer W by the transfer arm 54 between the support 66 of the substrate mounting portion 63 and the loader module 50. Since the height is limited, that is, it is not necessary to raise and lower the transfer arm 54, the opening 53 of the partition wall 57 on the back surface of the loader module 50 can be slit-shaped as shown in FIG. Since the opening area can be reduced, entry of corrosive gas from the purge storage (PST) 60 into the loader module (LM) 50 can be suppressed.

  Further, the gate valves G7 and G8 provided on the wall surfaces of the load lock modules 40a and 40b, respectively, use a bent valve body 80 (90) as shown in FIGS. Thus, when the processed wafer W is transferred from the load lock modules (LLM) 40a and 40b to the purge storage (PST), the transfer arm 54 is not brought into the loader module (LM) 50 as shown in FIG. The wafer W can be transferred to the purge storage (PST) by sliding the transfer arm 54 sideways. For this reason, since the stroke of the transfer arm 54 can be shortened and the turning radius of the transfer arm 54 can be reduced, the loader module (LM) 50 can be reduced, and the apparatus can be made compact.

  The load lock modules 40a and 40b are provided with transfer arms, and the processed wafers W in the load lock modules 40a and 40b are transferred to the substrate mounting portion 63 of the purge storage 60 by the transfer arms provided in the load lock modules 40a and 40b. Alternatively, the unprocessed wafer W supported by the support 66 of the substrate mounting unit 63 may be transferred to the load lock modules 40a and 40b.

  In the above embodiment, the purge storage 60 is provided between the load lock module 40a and the load lock module 40b. However, as shown in FIG. 10, the left side surface of the load lock module 40a and the right side of the load lock module 40b are provided. A purge storage 60 may be provided on each surface portion. Also in this case, the gate valve G7 (G8) provided between the purge storage 60 and the load lock module 40a (40b) is bent, and is placed on the wafer mounting table 41a (41b) of the load lock module 40a (40b). The processed wafer W placed thereon is received by the transfer arm 54 provided in the loader module 50, and the transfer arm 54 is slid sideways to be transferred to the substrate mounting portion 63 of the purge storage 60. Yes. Even in such a configuration, the same effect as the above-described embodiment can be obtained. In the present invention, the purge storage 60 may be provided only on one of the left side surface portion of the load lock module 40a and the right side surface portion of the load lock module 40b. In this case, for example, the load lock module 40a (40b) on the side where the purge storage 60 is provided side by side is dedicated to carrying out the processed wafer W. In the apparatus shown in FIG. 10, the load lock modules 40a and 40b may be provided with a transfer arm, and the processed wafer W may be transferred from the load lock module 40a (40b) to the purge storage 60 by the transfer arm. Good.

It is a top view which shows schematic structure of the substrate processing apparatus which concerns on embodiment of this invention. It is a perspective view which shows the principal part of the substrate processing apparatus which concerns on embodiment of this invention. It is sectional drawing which shows schematic structure of purge storage. It is a schematic perspective view which shows the gate valve provided between the load lock module and the purge storage. It is explanatory drawing which shows operation | movement of the gate valve shown in FIG. It is a schematic perspective view which shows the other gate valve provided between the load lock module and the purge storage. It is explanatory drawing which shows the effect | action of the gate valve shown in FIG. It is explanatory drawing which shows operation | movement of the conveyance arm provided in the loader module. It is explanatory drawing which shows operation | movement of the conveyance arm provided in the loader module. It is a top view which shows schematic structure of the substrate processing apparatus which concerns on other embodiment of this invention. It is a top view which shows schematic structure of the conventional substrate processing apparatus.

Explanation of symbols

2 substrate processing apparatus 20 transfer module 21 transfer arm units 30a to 30d process modules 40a and 40b load lock module 50 loader module 51 transfer arm mechanism 60 purge storage 70a to 70c hoop mounting table 71 orienter

Claims (14)

A mounting table for mounting a transport container storing a plurality of substrates;
A vacuum processing chamber for processing the substrate in a vacuum atmosphere;
A load lock chamber in which a substrate is transferred to and from this vacuum processing chamber, and can be switched between a vacuum atmosphere and a normal pressure atmosphere,
A post-processing chamber that is provided adjacent to the load lock chamber and performs post-processing in an air atmosphere to remove a product generated by vacuum processing on the processed substrate;
A substrate processing apparatus comprising: an atmospheric transfer chamber provided with a transfer unit that is interposed between the load lock chamber and the mounting table and transfers a substrate in an air atmosphere.   The substrate processing apparatus according to claim 1, wherein the substrate is carried into and out of the post-processing chamber by a transfer unit in the atmospheric transfer chamber.   The post-processing chamber and the atmospheric transfer chamber are partitioned by a partition wall, and a slit-like opening necessary for the passage of the transport means and the substrate is formed in the partition wall. The substrate processing apparatus according to claim 1 or 2.   4. The gate valve provided between the atmospheric transfer chamber and the load lock chamber also serves as a gate valve between the load lock chamber and the post-processing chamber. The substrate processing apparatus as described in one.   5. The substrate processing apparatus according to claim 4, wherein the transfer port of the load lock chamber is bent along a length direction, and the gate valve is bent corresponding to the shape of the transfer port. As the load lock chamber, a first load lock chamber and a second load lock chamber are provided symmetrically on the back side of the atmospheric transfer chamber,
6. The substrate processing apparatus according to claim 1, wherein the post-processing chamber is provided in the middle of the first and second load lock chambers.   The substrate processing apparatus according to claim 1, wherein the post-processing chamber includes a placement unit that can place the substrate in a plurality of stages.   8. The substrate processing apparatus according to claim 7, wherein the mounting portion in the post-processing chamber is configured to be lifted and lowered by a lifting means.   9. The post-processing chamber is provided to promote a reaction between a product on the substrate generated during processing in the vacuum processing chamber and moisture in the atmosphere. The substrate processing apparatus as described in one. A step of processing the substrate in a vacuum processing chamber;
Thereafter, a step of transporting the substrate from the vacuum processing chamber to a load lock chamber in a vacuum atmosphere;
A step of switching the atmosphere in the load lock chamber from a vacuum atmosphere to a normal pressure atmosphere;
Next, a step of transporting the substrate in the load lock chamber to a post-processing chamber provided adjacent to the load lock chamber;
In the post-treatment chamber, performing a post-treatment on the substrate in an air atmosphere in order to remove a product generated by vacuum treatment;
The substrate in the post-processing chamber is placed in an atmospheric transfer chamber provided with a transfer means for transferring the substrate in an atmospheric atmosphere, interposed between a mounting table for mounting a transport container storing a plurality of substrates and the load lock chamber. A substrate processing method.   The substrate processing method according to claim 10, wherein loading and unloading of the substrate to and from the post-processing chamber is performed by a transfer unit in the atmospheric transfer chamber.   The substrate processing method according to claim 10, wherein the substrate is transferred between the post-processing chamber and the atmospheric transfer chamber through a slit-shaped opening formed in the partition wall.   13. The gate valve provided between the atmospheric transfer chamber and the load lock chamber also serves as a gate valve between the load lock chamber and the post-processing chamber. One substrate processing method of description. A storage medium used for a substrate processing apparatus for processing a substrate in a vacuum atmosphere and storing a program that operates on a computer,
14. A storage medium characterized in that the program includes a group of steps so as to execute the substrate processing method according to any one of claims 10 to 13.

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