JP2008034622A - Semiconductor light-emitting element assembly - Google Patents

Semiconductor light-emitting element assembly Download PDF

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JP2008034622A
JP2008034622A JP2006206293A JP2006206293A JP2008034622A JP 2008034622 A JP2008034622 A JP 2008034622A JP 2006206293 A JP2006206293 A JP 2006206293A JP 2006206293 A JP2006206293 A JP 2006206293A JP 2008034622 A JP2008034622 A JP 2008034622A
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semiconductor light
radiator
lead
emitting element
leads
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Takuro Ishikura
Tomihiro Ito
富博 伊藤
卓郎 石倉
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Sharp Corp
Sharp Niigata Denshi Kogyo Kk
シャープ新潟電子工業株式会社
シャープ株式会社
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Priority to JP2006206293A priority Critical patent/JP2008034622A/en
Publication of JP2008034622A publication Critical patent/JP2008034622A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • H05K1/021Components thermally connected to metal substrates or heat-sinks by insert mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can improve heat dissipation property.
SOLUTION: The semiconductor light emitting element assembly has a semiconductor light emitting element which has first and second leads, a semiconductor light emitting element chip which is subjected to die-bonding on the first lead and is subjected to wire-bonding to the second lead, a heat dissipation metallic body which is fixed to the first and second leads through an insulating adhesion layer, and a reflector which is fixed on the first and second leads and reflects light from the chip; a wiring substrate with an opening which can contain the reflector; a radiator which is disposed in contact with the heat dissipation metallic body; and a fastening fixture for fastening and fixing the space between the radiator and the wiring substrate. The first and second leads are fixed to the wiring substrate for housing the reflector in the opening, and a space holder for holding the space between the radiator and the wiring substrate at a prescribed distance or more is provided between the radiator and the wiring substrate.
COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は,半導体発光素子アセンブリに関し,より詳しくは,効率的に放熱をすることができる半導体発光素子アセンブリに関する。 The present invention relates to a semiconductor light emitting device assembly, and more particularly, to a semiconductor light emitting device assembly capable of efficiently radiating.

まず,図6を用いて,従来の半導体発光素子の一例である表面実装型発光ダイオードについて説明する(例えば,特許文献1を参照)。 First, with reference to FIG. 6, which is an example a surface-mount type light emitting diode of a conventional semiconductor light-emitting device will be described (e.g., see Patent Document 1).

この発光ダイオードは,絶縁基板51と,絶縁基板51の上面から側面を通って下面に延びるダイボンド電極パターン53及びセカンド電極パターン55と,ダイボンド電極パターン53上に導電性接着剤57を介して固着された発光ダイオード素子59と,発光ダイオード素子59とセカンド電極パターン55とを接続するボンディングワイヤー61と,発光ダイオード素子59とボンディングワイヤー61を封止する透光性樹脂体63とを備える。 The light emitting diode includes an insulating substrate 51, a die bonding electrode pattern 53 and the second electrode pattern 55 extending on the lower surface through the side surface from the upper surface of the insulating substrate 51 is secured via a conductive adhesive 57 on the die bonding electrode patterns 53 It was provided with a light emitting diode element 59, the bonding wire 61 connecting the light emitting diode element 59 and the second electrode pattern 55, and a translucent resin material 63 to seal the light emitting diode element 59 and the bonding wire 61. この発光ダイオードの配線基板(図示せず)への実装は,電極パターン53,55の下面を配線基板のランドにはんだ付けすることによって行う。 Implementation of the wiring board of the light-emitting diode (not shown) is performed by soldering the lower surface of the electrode patterns 53 and 55 to lands of the wiring board.

発光ダイオード素子59で発生した熱は,主に,絶縁基板51及び電極パターン53,55を通って,配線基板に放出される。 Heat generated in the light emitting diode element 59 is mainly through the insulating substrate 51 and the electrode patterns 53 and 55, is released into the wiring board.
特開平11−46018号公報 JP-11-46018 discloses

発光ダイオード素子59は,その温度が高くなるほど発光効率が下がり,その寿命も短くなる。 Light emitting diode element 59, the light emission efficiency decreases as the temperature rises, also shortened its lifetime. このため,さらに効率的に発光ダイオード素子59からの熱を除去することが望まれている。 Therefore, it is desirable to further remove heat from efficiently emitting diode element 59. このことは,半導体発光素子一般についても当てはまる。 This is also true for the semiconductor light-emitting device in general.

本発明はこのような事情に鑑みてなされたものであり,放熱性を向上させることができる半導体発光素子アセンブリを提供するものである。 The present invention has been made in view of such circumstances, it is to provide a semiconductor light emitting device assembly which can improve the heat dissipation.

課題を解決するための手段及び発明の効果 Effect of means and invention to solve the problems

本発明の半導体発光素子アセンブリは,第1及び第2リードと,第1リード上にダイボンディングされ,第2リードにワイヤーボンディングされた半導体発光素子チップと,絶縁性接着層を介して第1及び第2リードに固着された放熱用金属体と,第1及び第2リード上に固着され,前記チップからの光を反射させる反射器とを備える半導体発光素子と,前記反射器を収容可能な開口部を有する配線基板と,前記放熱用金属体に接触するように配置された放熱器と,放熱器と配線基板との間を締め付け固定する締め付け固定部とを備え,前記反射器が前記開口部に収容されるように,第1及び第2リードが前記配線基板に固着され,前記放熱器と前記配線基板の間に,前記放熱器と前記配線基板の間の間隔を所定距離以上に保つ間隔保持部を The semiconductor light-emitting element assembly of the present invention comprises first and second leads, is die-bonded on the first lead, a semiconductor light emitting element chip wire bonded to the second lead, the first and via the insulating adhesive layer a second metal for secured radiated to the lead body, is fixed on the first and second leads, a semiconductor light emitting element and a reflector for reflecting light from the chip, capable of accommodating opening said reflector comprising: a wiring board having a part, and arranged radiator so as to be in contact with the metal body for heat dissipation, and a fastening part fastening for fixing between the radiator and the wiring board, wherein the reflector is the opening to be received, the first and second leads are fixed to the wiring substrate, between the wiring board and the radiator, the interval for maintaining a distance between the wiring board and the radiator than the predetermined distance a holding unit けたことを特徴とする。 And wherein the digit.

本発明では,放熱用金属体が,絶縁性接着層を介して第1及び第2リードに固着されている。 In the present invention, the radiating metal body is affixed to the first and second lead via the insulating adhesive layer. 放熱用金属体は,通常,熱伝導度が大きいので,半導体発光素子チップから第1リードに伝わった熱は,絶縁性接着層を通って放熱用金属体に移動し,放熱用金属体全体に速やかに拡散し,外部に放出される。 Radiating metal body, usually, the thermal conductivity is high, the semiconductor light-emitting element chip heat transferred to the first lead passes through the insulating adhesive layer moves to the metal body for heat dissipation, throughout the metal body for heat dissipation rapidly diffused, it is discharged to the outside. このように,本発明では,放熱用金属体を新たに設けることによって半導体発光素子チップから第1リードに伝わった熱が第1リードに留まることがないので,放熱性を向上させることができる。 Thus, in the present invention, since the heat transferred to the first lead from the semiconductor light emitting device chip by newly providing the radiating metal body does not remain in the first lead, it is possible to improve heat dissipation.
さらに,本発明では,放熱用金属体に接触するように放熱器が配置されており,放熱器と配線基板は,締め付け固定部によって締め付け固定されている。 Furthermore, the present invention has been radiator placed in contact with the metal body for heat dissipation, the radiator and the wiring board is fastened by the fastening part. 放熱器が配線基板に締め付け固定されているので,放熱器のサイズを大きくした場合でも放熱器を配線基板に確実に固定することができる。 Since the radiator is fastened to the wiring board, it can be securely fixed to the wiring board to the radiator even if you increase the size of the radiator. 放熱器のサイズを大きくすることによって,放熱性を向上させることができる。 By increasing the size of the radiator, thereby improving the heat radiation property.

ところで,締め付け固定部によって放熱器と配線基板との間を締め付け過ぎると,配線基板が変形することがある。 However, too clamped between the radiator and the wiring board by fastening portions, there is the wiring board is deformed. 配線基板が変形すると,配線基板に固着された第1及び第2リードが変形したり,第1及び第2リードが配線基板から外れたりするといった問題が生じ得る。 When the wiring board is deformed, or deformed the first and second leads that are affixed to the wiring board, a problem first and second leads or off from the wiring board can occur. そこで,本発明では,放熱器と配線基板の間に,放熱器と配線基板の間の間隔を所定距離以上に保つ間隔保持部を設けることによって,ビスの締め過ぎ等による配線基板の変形を抑制した。 Therefore, in the present invention, suppression between the radiator and the wiring board, by providing the interval holding unit to maintain a predetermined distance or more the distance between the radiator and the wiring board, the deformation of the wiring board by tightening just like bis did.

以下,本発明の一実施形態を図面を用いて説明する。 Hereinafter, an embodiment of the present invention with reference to the drawings. 図面は,説明の便宜のために用いられるものであり,本発明の範囲は,以下の記載や図面に示す実施形態に限定されない。 The drawings are intended to be used for convenience of explanation, the scope of the present invention is not limited to the following embodiments described and drawings.

1. 1. 第1実施形態 図1(a)〜(c)を用いて,本発明の第1実施形態の半導体発光素子アセンブリ(以下,「アセンブリ」ともいう。)について説明する。 Using the first embodiment FIG. 1 (a) ~ (c), first embodiment of a semiconductor light-emitting element assembly of the present invention (hereinafter, also referred to as "assembly".) Will be described. 図1(a)は,本実施形態のアセンブリの平面図,図1(b)は,図1(a)のI−I断面図,図1(c)は,図1(a)のII−II断面図である。 1 (a) is a plan view of the assembly of the present embodiment, FIG. 1 (b), I-I section view of FIG. 1 (a), FIG. 1 (c), Figure 1 (a) II- II is a cross-sectional view.
本実施形態のアセンブリは,半導体発光素子1と,配線基板19と,放熱器23と,締め付け固定部31と,間隔保持部とを備える。 Assembly of the present embodiment includes a semiconductor light emitting element 1, the wiring substrate 19, a radiator 23, a fastening part 31, and a space holding portion. 以下,各構成要素について説明する。 Hereinafter, each component will be described.

(1)半導体発光素子 半導体発光素子1は,第1及び第2リード2,5と,第1リード2上にダイボンディングされ,第2リード5にワイヤーボンディングされた半導体発光素子チップ3と,絶縁性接着層7を介して第1及び第2リード2,5に固着された放熱用金属体9と,第1及び第2リード2,5上に固着され,チップ3からの光を反射させる反射器15とを備える。 (1) a semiconductor light emitting device semiconductor light emitting element 1, the first and second leads 2 and 5, is die-bonded on a first lead 2, a semiconductor light-emitting element chip 3 is wire-bonded to the second lead 5, an insulating and the radiating metal body 9 which is fixed to the first and second leads 2 and 5 through sexual adhesive layer 7, it is fixed on the first and second leads 2 and 5, to reflect light from the chip 3 reflected and a vessel 15.

チップ3は,導電性接着層11を介して,第1リード2上にダイボンディングされている。 Chip 3 via the conductive adhesive layer 11 is die-bonded on a first lead 2. チップ3は,ボンディングワイヤー13を介して第2リード5にワイヤーボンディングされている。 Chip 3 is wire-bonded to the second lead 5 via a bonding wire 13.
第1及び第2リード2,5上には,チップ3からの光を反射させる反射器15が固着されている。 On the first and second leads 2 and 5, a reflector 15 for reflecting light from the chip 3 is fixed. 反射器15は,反射面15aでチップ3からの光を反射させる。 The reflector 15 reflects the light from the chip 3 on the reflecting surface 15a. 反射器15の反射面15aよりも内側の空間には,チップ3およびボンディングワイヤーを保護するための透明樹脂16が充填されている。 The internal space of the reflecting surface 15a of the reflector 15, the transparent resin 16 for protecting the chip 3 and the bonding wires are filled. 第1及び第2リード2,5は,それぞれの先端2a,5aまで,チップ3の光出射方向(矢印A)に垂直な方向に延びている。 First and second leads 2 and 5, each of the tip 2a, until 5a, extends in a direction perpendicular to the light emitting direction of the chip 3 (arrow A). 第1及び第2リード2,5は,同一直線上で反対方向に延びている。 First and second leads 2 and 5 extend in opposite directions on the same straight line. 第1及び第2リード2,5は,放熱用金属体9等に接触して短絡することが無ければ屈曲又は湾曲していてもよい。 First and second leads 2 and 5, may be bent or curved Without shorting in contact with the metal body 9 for heat dissipation and the like.
チップ3は,発光ダイオード(LED)チップなどからなる。 Chip 3 consists of such as a light emitting diode (LED) chips. 絶縁性接着層7の厚さは,好ましくは20〜100μm程度であるが,絶縁性が確保できるのであればこれよりも薄くてもよい。 The thickness of the insulating adhesive layer 7 is preferably approximately from 20 to 100 [mu] m, the insulating properties may be thinner than this as long as it can ensure. 絶縁性接着層7は,絶縁性接着シートなどからなる。 Insulating adhesive layer 7 is made of an insulating adhesive sheet. 放熱用金属体は,アルミなどの熱伝導度の高い金属板などからなる。 Radiating metal body is made of a metal having high plate thermal conductivity such as aluminum.

本実施形態では,放熱用金属体9が,絶縁性接着層7を介して第1及び第2リード2,5に固着されている。 In the present embodiment, the radiating metal body 9 is fixed to the first and second leads 2 and 5 via the insulating adhesive layer 7. 放熱用金属体9は,通常,熱伝導度が大きいので,チップ3から第1リード2に伝わった熱は,絶縁性接着層7を通って放熱用金属体9に移動し,放熱用金属体9全体に速やかに拡散し,外部に放出される。 Radiating metal body 9 is generally the heat conductivity is high, heat transferred from the chip 3 to the first lead 2 moves to the metal body 9 for heat dissipation through an insulating adhesive layer 7, the metal body for heat dissipation 9 whole diffuses rapidly, is released to the outside. このように,絶縁性接着層7を介しているにもかかわらずチップ3で発生した熱がスムーズに放熱用金属体9に伝わるのは絶縁性接着層9が薄いからである。 Thus, the heat generated in spite of the chip 3 via an insulating adhesive layer 7 is transmitted to the metal body 9 for heat dissipation smoothly is because a thin insulating adhesive layer 9. また,絶縁性接着層7を薄くできるのは絶縁性接着シートを用いているため,リード2,5と放熱用金属体9とを圧力を加えて接着しても短絡しないことによる。 Also, can thin the insulating adhesive layer 7 is due to the use of insulating adhesive sheet, due to the fact that even when adhered by applying a pressure to the leads 2 and 5 and the metal body 9 for heat dissipation not short. 接着剤だけで圧着した場合,圧力が均一に加えられずに部分的に短絡する恐れがある。 If crimped just adhesives, there is a possibility that a short circuit partially without added uniformly pressure. 本実施形態では,放熱用金属体9を備えるのでチップ3から第1リード2に伝わった熱が第1リード2に留まることがないので,放熱性が高い。 In the present embodiment, since so comprises a metal body 9 for heat dissipation heat transmitted from the chip 3 to the first lead 2 is never remain in the first lead 2, a high heat dissipation.

(2)配線基板,放熱器 配線基板19は,反射器15を収容可能な開口部25を有する。 (2) a wiring board, the radiator wiring board 19 has a reflector 15 can accommodate the opening 25. 放熱器23は,放熱用金属体9に接触するように配置されている。 Radiator 23 is placed in contact with the metal body 9 for heat dissipation. 第1及び第2リード2,5は,反射器15が開口部25に収容されるように配線基板19に固着されている。 First and second leads 2 and 5, the reflector 15 is fixed to the wiring board 19 so as to be received in the opening 25. 第1及び第2リード2,5は,はんだ層21を介して配線基板19に固着されている。 First and second leads 2 and 5 is fixed to the wiring board 19 via a solder layer 21. 配線基板19の,第1及び第2リード2,5を固着させる部分には,第1及び第2リード2,5を固着させるためのランドが形成されている。 Of the wiring board 19, in part to fix the first and second leads 2 and 5, the lands for fixing the first and second leads 2 and 5 are formed.
配線基板19に取り付ける半導体発光素子1の数は,1つであっても,2つ以上であってもよい。 The number of the semiconductor light emitting element 1 attached to the wiring board 19, be one or may be two or more. 2つ以上の半導体素子は,例えば,例えばマトリックス状に配置することができる。 Two or more semiconductor elements, for example, can be arranged for example in a matrix. 半導体発光素子1の数が2つ以上である場合,それぞれの半導体発光素子1に放熱器23や後述する締め付け固定部及び間隔保持部を設けることができる。 If the number of the semiconductor light emitting element 1 is two or more, it can be provided fixed portion and a space holding portion clamping to radiator 23 and below the respective semiconductor light emitting element 1. または,放熱器23を複数の半導体発光素子1に共用してもよい。 Or it may share a radiator 23 into a plurality of semiconductor light-emitting element 1. この場合,締め付け固定部及び間隔保持部は,半導体発光素子1ごとに設けられることが好ましい。 In this case, the fastening part and the space holding portion is preferably provided for each semiconductor light emitting element 1.
放熱器23は,冷却フィンや水冷冷却器などからなる。 Radiator 23 is made of the cooling fins and water cooled condenser. 放熱器23は,はんだや接着剤などからなる固着層を介して間接的に放熱用金属体9に接触させてもよく,放熱用金属体9に直接接触させてもよい。 Radiator 23 may be indirectly brought into contact with the radiating metal body 9 via the fixing layer made of solder or adhesive, it may be contacted directly to the metal body 9 for heat dissipation. 好ましくは,放熱器23は,放熱器23と放熱用金属体9とが対向する面の面積が,放熱用金属体9よりも大きいことが好ましい。 Preferably, radiator 23, the area of ​​the surface of the radiator 23 and the radiating metal body 9 opposing, preferably larger than the metal body 9 for heat dissipation. 放熱器23が大きいほど,放熱性が向上するからである。 More radiator 23 is large, it is improved heat dissipation property.

本実施形態のアセンブリは,予め配線基板19に開口部25を形成しておき,開口部25に反射器15を嵌め込んだ状態で第1及び第2リード2,5を配線基板19にはんだ付けすることによって作製することができる。 Assembly of this embodiment is previously formed an opening 25 in advance on the wiring board 19, soldered to the wiring board 19 of the first and second leads 2 and 5 in a state of fitting the reflector 15 to the opening 25 it can be prepared by. 本実施形態のアセンブリでは,チップ3で発生した熱は,第1リード2を経由して配線基板19に放出されるのに加えて,放熱用金属体9からも放出されるので,放熱性が高い。 The assembly according to this embodiment, the heat generated by the chip 3, in addition to being released into the wiring board 19 via the first lead 2, since it is released from the metal body 9 for heat dissipation, heat dissipation is high. また,放熱器23が放熱用金属体9に接触するように配置されることによって放熱性がさらに高められている。 Further, the radiator 23 is further enhanced heat dissipation by being placed in contact with the metal body 9 for heat dissipation.

さらに,第1及び第2リード2,5が矢印Aに垂直な方向に延びているので,第1及び第2リード2,5は,配線基板19に対向する面全体で,配線基板19に固着されている。 Further, since the first and second leads 2 and 5 extend in the direction perpendicular to the arrow A, the first and second leads 2 and 5, the entire opposing surfaces of the wiring board 19, fixed to the wiring board 19 It is. これによって,第1リード2と配線基板19との間の接触面積が大きくなり,放熱性がさらに高くなっている。 Thus, the contact area between the first lead 2 and the wiring board 19 is increased, becomes even higher heat dissipation.

(3)締め付け固定部,間隔保持部 放熱器23と配線基板19は,締め付け固定部31によって締め付け固定される。 (3) the fastening part, the interval holding unit heat radiator 23 and the wiring board 19 is fastened by the fastening part 31. また,放熱器23と配線基板19の間に,放熱器23と配線基板19の間の間隔を所定距離以上に保つ間隔保持部が設けられている。 Between the radiator 23 and the wiring board 19, the interval holding unit for maintaining a distance between the radiator 23 and the wiring board 19 than the predetermined distance is provided. 本実施形態では,間隔保持部は,第1及び第2リード2,5が延びる方向(図1(a)の直線I−I方向)に直交する方向(図1(a)の直線II−II方向)に放熱用金属体9が延長されて形成される放熱用金属体9の延長部9aによって構成される。 In the present embodiment, the interval holding unit linearly II-II direction (FIGS. 1 (a) perpendicular to the first and second directions leads 2 and 5 extend (straight II direction of FIG. 1 (a)) constituted by an extension 9a of the radiating metal body 9 for heat dissipation metal body 9 in the direction) is formed is extended.

締め付け固定部31は,放熱器23と配線基板19との間を締め付け固定できるものであればよく,その構成は限定されない。 Fastening part 31 is not limited as long as the tightening can be fixed between the radiator 23 and the wiring board 19, the configuration is not limited. 例えば,放熱器23にタップが切られている場合には,締め付け固定部31は,ボルトと放熱器のタップの組み合わせからなり,放熱器23にタップが切られていない場合には,締め付け固定部31は,ボルトとナットの組み合わせからなる。 For example, if you are taps are cut to the radiator 23, the fixed portion 31 tightening, a combination of the tap bolts and the radiator, if the tap to the radiator 23 is not cut, the fastening part 31 is a combination of bolts and nuts. 図1(c)では,放熱器23にタップが切られていて,締め付け固定部31が,ボルト(六角穴付ボルト) と放熱器のタップの組み合わせからなる場合を示している。 In FIG. 1 (c), have the tap is turned off to the radiator 23, the fastening part 31, it shows the case where bolts and (hexagon socket head cap screw) a combination of a tap of the radiator.
また,締め付け固定部31の数や設置位置は,特に限定されないが,放熱器23を確実に固定するために,締め付け固定部31は,2つ以上設けられることが好ましい。 Also, the number and installation position of the fastening part 31 is not particularly limited, in order to reliably fix the radiator 23, the fixing portion 31 clamping is preferably provided two or more. また,締め付け固定部31が2つである場合,2つの締め付け固定部31は,半導体発光素子1の中心に対して点対称となる位置に設置されることが好ましい。 Further, when the fastening part 31 is two, the two fastening part 31 is preferably provided at a position where a point symmetry with respect to the center of the semiconductor light emitting element 1. この場合,放熱器23がより確実に固定されるからである。 In this case, since the radiator 23 it can be more reliably fixed. さらに,第1及び第2リード2,5の変形を小さくするために,2つの締め付け固定部31は,半導体発光素子1の中心に対して点対称となり,かつ第1及び第2リード2,5が延びる方向に平行であって半導体発光素子1の中心を通る直線に対して線対称となるように配置されることがさらに好ましい。 Furthermore, in order to reduce the deformation of the first and second leads 2 and 5, the two fastening portions 31, becomes point-symmetrical with respect to the center of the semiconductor light emitting element 1, and the first and second leads 2 and 5 It is arranged to be symmetrical with respect to a straight line passing through the parallel even in the center of the semiconductor light emitting element 1 in the direction in which the extending more preferred.

ところで,締め付け固定部31によって放熱器23と配線基板19との間を締め付け過ぎると,配線基板19が図1(c)の矢印Bの方向に変形し,これによって,配線基板19に固着された第1及び第2リード2,5が変形したり,第1及び第2リード2,5が配線基板から外れたりするといった問題が生じ得る。 However, too clamped between the radiator 23 by the fastening part 31 and the wiring board 19, the wiring board 19 is deformed in the direction of arrow B in FIG. 1 (c), whereby, fixed to the wiring board 19 or deform the first and second leads 2 and 5, a problem first and second leads 2 and 5 or disengaged from the wiring board can occur. しかし,本実施形態では,配線基板19がある程度変形すると,配線基板19が,放熱用金属体9の延長部9aに当接し,配線基板19が,それ以上変形しないようになっている。 However, in the present embodiment, the wiring board 19 is somewhat deformed, the wiring board 19 comes into contact with the extension 9a of the radiating metal body 9, the wiring board 19 so as not to deform more. このため,配線基板19の変形に起因する第1及び第2リード2,5の変形が抑制され,上記問題の発生が抑制される。 Therefore, deformation of the first and second leads 2 and 5 due to the deformation of the wiring substrate 19 is suppressed, occurrence of the problems can be suppressed.

2. 2. 第2実施形態 図2(a)〜(c)を用いて,本発明の第2実施形態の半導体発光素子アセンブリについて説明する。 Second Embodiment FIG. 2 with (a) ~ (c), a description will be given of a semiconductor light-emitting element assembly of the second embodiment of the present invention. 図2(a)は,本実施形態のアセンブリの平面図,図2(b)は,図2(a)のI−I断面図,図2(c)は,図2(a)のII−II断面図である。 2 (a) is a plan view of the assembly of the present embodiment, FIG. 2 (b), I-I section view of FIG. 2 (a), FIG. 2 (c), FIG. 2 (a) II- II is a cross-sectional view.
本実施形態のアセンブリは,第1実施形態のアセンブリに類似しているが,間隔保持部の構成が異なっている。 Assembly of this embodiment is similar to the assembly of the first embodiment has a different configuration of the space holding portion. 本実施形態では,間隔保持部は,スペーサ33からなる。 In the present embodiment, the interval holding unit is made of a spacer 33.

本実施形態では,スペーサ33によって,放熱器23と配線基板19の間の間隔が保持されるので,締め付け固定部31によって放熱器23と配線基板19との間を締め付け過ぎた場合でも,第1及び第2リード2,5の変形が抑制される。 In this embodiment, the spacer 33, the radiator 23 and the spacing between the wiring board 19 is held by the fastening part 31 even when the overtighten between the radiator 23 and the wiring board 19, first and deformation is suppressed in the second leads 2 and 5.
スペーサ33を配置する位置は,特に限定されない。 Position to place the spacer 33 is not particularly limited. スペーサ33は,例えば,図2(a)に示すように,締め付け固定部31と,放熱用金属体9との間に配置される。 Spacer 33 is, for example, as shown in FIG. 2 (a), the fastening part 31 is arranged between the metal body 9 for heat dissipation. このような位置にスペーサ33が配置されると,締め付け固定部31による締め付けによって生じる配線基板19の変形が,第1及び第2リード2,5に伝わりにくく,第1及び第2リード2,5の変形をさらに抑制することができる。 When spacer 33 is disposed at such a position, the deformation of the wiring board 19 caused by clamping by fastening section 31 is not easily transmitted to the first and second leads 2 and 5, the first and second leads 2 and 5 it is possible to further suppress the deformation.
スペーサ33の数は限定されず,1つであっても2つ以上であってもよい。 The number of the spacers 33 is not limited, it may be two or more be one. 図2(a),(c)に示すように,2つの締め付け固定部31によって放熱器23と配線基板19との間を締め付ける場合には,スペーサ33の数は2つ以上にすることが好ましく,各スペーサ33は,各締め付け固定部31と放熱用金属体9との間に配置されることが好ましい。 FIG. 2 (a), the as shown in (c), when the by two fastening portions 31 tighten between the radiator 23 and the wiring board 19, the number of the spacers 33 is preferably set to 2 or more each spacer 33 is preferably disposed between each fastening portion 31 and the radiating metal body 9.

3. 3. 第3実施形態 図3(a)〜(c)を用いて,本発明の第3実施形態の半導体発光素子アセンブリについて説明する。 Third Embodiment FIG. 3 with (a) ~ (c), a description will be given of a semiconductor light-emitting element assembly according to a third embodiment of the present invention. 図3(a)は,本実施形態のアセンブリの平面図,図3(b)は,図3(a)のI−I断面図,図3(c)は,図3(a)のII−II断面図である。 3 (a) is a plan view of the assembly of the present embodiment, FIG. 3 (b), I-I section view of FIG. 3 (a), FIG. 3 (c), Figure 3 (a) II- II is a cross-sectional view.
本実施形態のアセンブリは,第2実施形態のアセンブリに類似しているが,スペーサ33の配置位置が異なっている。 Assembly of this embodiment is similar to the assembly of the second embodiment, positions of the spacers 33 are different. 本実施形態では,スペーサ33は,2つであり,2つのスペーサ33は,第1及び第2リード2,5が延びる方向の延長線上にそれぞれ配置されている。 In this embodiment, the spacer 33 is two, two spacers 33 are arranged respectively on the extension of the direction in which the first and second leads 2 and 5 extend. スペーサ33は,このような位置に配置された場合でも,第1及び第2リード2,5の変形を抑制することができる。 Spacer 33, even when placed in such a position, it is possible to suppress deformation of the first and second leads 2 and 5.

4. 4. 第4実施形態 図4(a)〜(c)を用いて,本発明の第4実施形態の半導体発光素子アセンブリについて説明する。 Fourth Embodiment FIG. 4 with reference to (a) ~ (c), a description will be given of a semiconductor light-emitting element assembly according to a fourth embodiment of the present invention. 図4(a)は,本実施形態のアセンブリの平面図,図4(b)は,図4(a)のI−I断面図,図4(c)は,図4(a)のII−II断面図である。 4 (a) is a plan view of the assembly of the present embodiment, FIG. 4 (b), I-I section view of FIG. 4 (a), FIG. 4 (c), FIG. 4 (a) II- II is a cross-sectional view.
本実施形態のアセンブリは,第1実施形態のアセンブリに類似しているが,半導体発光素子1の構成が異なっている。 Assembly of this embodiment is similar to the assembly of the first embodiment, the configuration of the semiconductor light emitting element 1 is different. 本実施形態では,半導体発光素子1は,複数の発光モジュール35を有している。 In the present embodiment, the semiconductor light emitting element 1 has a plurality of light emitting modules 35. 各発光モジュール35は,第1及び第2リード2,5と,第1リード2上にダイボンディングされ,第2リード5にワイヤーボンディングされた半導体発光素子チップ3とから構成される。 Each light-emitting module 35 includes first and second leads 2 and 5, is die-bonded on a first lead 2, and a wire-bonded semiconductor light-emitting element chip 3 which the second lead 5. また,複数の発光モジュール35は,第1及び第2リード2,5が延びる方向に直交する方向に沿って並べられる。 Further, a plurality of light emitting modules 35 are arranged along the direction orthogonal to the direction in which the first and second leads 2 and 5 extend.
半導体発光素子1が複数の発光モジュール35を有する場合,半導体発光素子1からの総発熱量が多くなるので,それだけ放熱が重要になるが,本実施形態では,比較的大きな放熱器23を使用し,この放熱器23と配線基板19との間を締め付け固定部31によって締め付け固定することにより,高い放熱性を実現している。 When the semiconductor light emitting element 1 has a plurality of light emitting module 35, the total amount of heat generated from the semiconductor light emitting element 1 is increased, but that much heat dissipation becomes important, in the present embodiment, using a relatively large radiator 23 by tightening fixing by the fixing unit 31 clamped between the radiator 23 and the wiring board 19, thereby achieving high heat dissipation.

5. 5. 半導体発光素子アセンブリの製造方法 次に,図1(a)〜(c)に示すような半導体発光素子アセンブリの製造方法の一実施形態について,図5(a)〜(e)を用いて説明する。 The method of manufacturing a semiconductor light-emitting element assembly Next, an embodiment of a semiconductor manufacturing method of the light emitting device assembly as shown in FIG. 1 (a) ~ (c), will be described with reference to FIG. 5 (a) ~ (e) . 図5(a)〜(e)は,本実施形態の半導体発光素子アセンブリの製造工程を示す,図1(b)に対応する断面図である。 Figure 5 (a) ~ (e) show the fabrication process of the semiconductor light-emitting element assembly according to this embodiment is a cross-sectional view corresponding to FIG. 1 (b).

5−1. 5-1. 半導体発光素子製造工程 まず,半導体発光素子アセンブリに含まれる半導体発光素子を製造する。 The semiconductor light emitting device manufacturing process First, to produce a semiconductor light-emitting elements included in the semiconductor light-emitting element assembly. 以下,半導体発光素子を製造するための種々の工程について説明する。 The following describes various steps for preparing a semiconductor light-emitting element.

(1)反射器形成工程 まず,半導体発光素子チップ用の第1及び第2リード部2b,5bを有するリードフレーム27上に,反射面15aを有する反射器15を形成し,図5(a)に示す構造を得る。 (1) a reflector forming step First, the first and second lead portions 2b of the semiconductor light-emitting element chip, on the lead frame 27 having 5b, to form a reflector 15 having a reflecting surface 15a, FIGS. 5 (a) a structure shown in. 反射器15は,トランスファー成形によってテーパー上の開口部を有する樹脂層を形成し,この開口部の内面にアルミニウムや銀などの可視光に対して反射率の高い金属を蒸着して反射面15aを形成することによって,形成することができる。 The reflector 15, to form a resin layer having an opening on the tapered by transfer molding, a reflective surface 15a by depositing the high reflectance metal to visible light such as aluminum or silver on the inner surface of the opening by forming, it can be formed. 樹脂層の材料は,特に限定されないが,例えば,エポキシ樹脂にフィラ−(例えばシリカ)を混ぜたものを用いることができる。 The material of the resin layer is not particularly limited, for example, fillers in the epoxy resin - can be used after mixing (e.g., silica). また,樹脂層の材料に酸化チタンを含んだ白色の樹脂を用いると,テーパー面をそのまま反射面とすることができるので,アルミニウムなどの蒸着工程を省略することができる。 Moreover, the use of materials in the white resin containing titanium oxide of the resin layer, it is possible to directly reflecting surface a tapered surface, it is possible to omit the deposition process, such as aluminum.
また,トランスファー成型で反射層を作成する場合,リードと反射層をしっかりと固定するために,例えば,リードに貫通孔を設けて反射器を形成する樹脂をリードの裏側に回すと良い。 In the case of creating a reflective layer in transfer molding, to secure the lead and the reflective layer, for example, turning the resin forming the reflector to provide a through hole in the lead on the back side of the lead may. 該貫通孔はリードの下に放熱層が無い部分に設ければよい。 Through hole may be provided in the portion heat dissipation layer is not under the lead.
また,反射器を成型しておき,絶縁性接着シートでリードに圧着しても良い。 Also, leave molding a reflector may be crimped to the leads with an insulating adhesive sheet.

リードフレーム27には,枠部29が付いているが,枠部29は,後工程において,一点鎖線の位置で切り離される。 The lead frame 27 is marked with the frame portion 29, the frame unit 29, in a subsequent step, it is separated at the position of the dashed line. 枠部29の切り離し後に,第1及び第2リード部2b,5bが,それぞれ,第1及び第2リード2,5となる。 After disconnection of the frame portion 29, first and second lead portions 2b, 5b, respectively, the first and second leads 2 and 5.

なお,半導体発光素子チップからの光出力検出用のフォトダイオードチップを設ける場合には,反射器15の形成前にフォトダイオードチップをリードフレーム27にダイボンディング及びワイヤーボンディングしておくことができる。 Incidentally, in the case where a photodiode chip for the light output detection from the semiconductor light emitting device chip may have been die-bonded and wire bonded to the lead frame 27 and the photodiode chip before formation of the reflector 15. フォトダイオードチップは,反射器15内に埋め込まれる位置にダイボンディングしてもよい。 Photodiode chip may be die-bonded to a position that is embedded in the reflector 15. 半導体発光素子チップからの光の一部は,反射面15aで反射されずに透過するので,フォトダイオードチップが反射器15に埋め込まれていても,半導体発光素子チップからの光出力の検出は可能である。 Some of the light from the semiconductor light emitting device chip, so transmitted without being reflected by the reflecting surface 15a, even if the photodiode chip is embedded in the reflector 15, the detection of light output from the semiconductor light emitting device chip can it is.

(2)放熱用金属体固着工程 次に,リードフレーム27に,絶縁性接着層7を介して放熱用金属体9を固着し,図5(b)に示す構造を得る。 (2) radiating metal member fixing step Next, the lead frame 27, via the insulating adhesive layer 7 is fixed to the radiating metal body 9 to obtain a structure shown in Figure 5 (b).

放熱用金属体9は,アルミなどの熱伝導度の高い金属板などからなる。 Radiating metal body 9, made of a metal having high plate thermal conductivity such as aluminum. 放熱用金属体9とリードフレーム27とは,絶縁性接着シートからなる絶縁性接着層7を間に挟んで,熱圧着することによって,互いに固着することができる。 And the radiating metal body 9 and the lead frame 27 is sandwiched between the insulating adhesive layer 7 made of an insulating adhesive sheet by thermocompression bonding, it can be fixed to each other. 接着剤や溶融樹脂などで放熱用金属体9とリードフレーム27を熱圧着すると,両者の間から接着剤や溶融樹脂がはみ出すことがあるが,絶縁性接着シートを用いると,このようなはみ出しが起こり難い。 When the like in the metal body 9 for heat dissipation adhesive or molten resin Lead frame 27 thermocompression bonding, it is possible to protrude the adhesive and the molten resin from between the two, the use of insulating adhesive sheet, such protrusion is unlikely to occur. 絶縁性接着シートには,例えば,ポリエステルやポリ塩化ビニル等からなる絶縁性支持層の両面に,アクリル系ポリマーなどからなる接着層を有するものを用いることができる。 The insulating adhesive sheet, for example, on both sides of the insulating support layer consisting of polyester, polyvinyl chloride, can be used having an adhesive layer made of an acrylic polymer. このように絶縁性支持層を有する絶縁性接着シートを用いると,放熱用金属体9とリードフレーム27の間を確実に絶縁することができ,両者の間の短絡を防止することができる。 With such use of the insulating adhesive sheet having an insulating support layer, between the radiating metal body 9 and the lead frame 27 can reliably be insulated, it is possible to prevent a short circuit therebetween. 両面の接着層は,互いに同一であっても異なっていてもよい。 Both surfaces of the adhesive layer may being the same or different. このような絶縁性接着シートは,市販されており,例えば,リンテック株式会社社製の型式LE5004や日立化成工業株式会社製の型式GF−3600を用いることができる。 Such an insulating adhesive sheet is commercially available, for example, can be used LINTEC Corporation Co. Model LE5004 and Hitachi Chemical Model GF-3600 manufactured by Corporation.

(3)ダイボンディング,ワイヤーボンディング,透明樹脂充填工程 第1リード部2b上に半導体発光素子チップ3をダイボンディングし,チップ3と第2リード部5bをワイヤーボンディングする。 (3) a die bonding, wire bonding, die-bonded semiconductor light-emitting element chip 3 to the transparent resin filling process on the first lead portion 2b, wire-bonded to the chip 3 and the second lead portion 5b. ダイボンディング及びワイヤーボンディングは,それぞれ,導電性接着層11及びボンディングワイヤー13を介して行うことができる。 Die bonding and wire bonding can be carried out respectively, through a conductive adhesive layer 11 and the bonding wire 13.

次に,反射器15の反射面15aよりも内側の空間に,透明樹脂16を充填し,図5(c)に示す構造を得る。 Then, the inner space of the reflecting surface 15a of the reflector 15, filled with a transparent resin 16, the structure shown in FIG. 5 (c). 透明樹脂16は,エポキシ樹脂などからなる。 The transparent resin 16 is made of epoxy resin.

(4)第1及び第2リード部を切り出し工程 次に,リードフレーム27から枠部29を切り離すことによって,第1及び第2リード部2b,5bを切り出して,図5(d)に示す第1及び第2リード2,5を有する半導体発光素子1を得る。 (4) Step cut out the first and second lead parts Next, by separating the frame portion 29 from the lead frame 27, the first and second lead portions 2b, cut out 5b, first shown in FIG. 5 (d) obtaining a semiconductor light-emitting device 1 having a first and second leads 2 and 5.

5−2. 5-2. 半導体発光素子アセンブリ製造工程 次に,半導体発光素子1に配線基板や放熱器を取り付けて,半導体発光素子アセンブリを製造する工程について説明する。 The semiconductor light emitting device assembly manufacturing process Next, by attaching the wiring board and the radiator to the semiconductor light emitting element 1, steps for manufacturing the semiconductor light-emitting element assembly.
(1)配線基板の取り付け工程 まず,図5(e)に示すように,開口部25を有する配線基板19を準備し,反射器15が開口部25に収容されるように半導体発光素子1を配置し,はんだ層21を介して半導体発光素子1の第1及び第2リード2,5を配線基板19に固着させる。 (1) attachment process of the wiring board first, as shown in FIG. 5 (e), to prepare a wiring board 19 having an opening 25, the semiconductor light emitting element 1 as reflectors 15 is accommodated in the opening 25 arrangement, and to fix the first and second leads 2 and 5 of the semiconductor light emitting element 1 via a solder layer 21 on the wiring board 19. 配線基板19の,第1及び第2リード2,5を固着させる部分には,予め第1及び第2リード2,5固着用のランドを形成しておく。 Of the wiring board 19, in part to fix the first and second leads 2 and 5, formed in advance first and second leads 2 and 5 lands for fixation.

(2)放熱器の取り付け,締め付け固定工程 次に,図1(a)〜(c)に示すように,放熱用金属体9に接触するように放熱器23を配置し,締め付け固定部31によって放熱器23と配線基板19との間を締め付け固定し,半導体発光素子アセンブリの製造を完了する。 (2) mounting of the radiator, fastening step Next, as shown in FIG. 1 (a) ~ (c), the heat radiator 23 to be in contact with the metal body 9 for heat dissipation disposed, the fastening part 31 radiator 23 and fixedly fastened between the wiring substrate 19, to complete the fabrication of semiconductor light-emitting element assembly. 本実施形態によれば,締め付け固定部31による締め付け固定が強すぎても,放熱用金属体9の延長部9aからなる間隔保持部が存在することによって,第1及び第2リード2,5の変形が抑制される。 According to this embodiment, even if fixed is too strong tightening by the fastening part 31, by the interval holding unit consisting of the extension 9a of the radiating metal body 9 are present, the first and second leads 2 and 5 deformation is suppressed.
なお,配線基板19には複数個の半導体発光素子1を取り付けてもよく、この場合,上記と同様の方法で,複数個の半導体発光素子1のそれぞれについて,第1及び第2リード2,5を配線基板19に固着させ、放熱用金属体9に接触するように放熱器23を配置し,締め付け固定部31によって放熱器23と配線基板19との間を締め付け固定する。 Incidentally, it may be mounted a plurality of semiconductor light emitting element 1 to the wiring board 19, in this case, in the same manner as described above, for each of the plurality of semiconductor light-emitting device 1, the first and second leads 2 and 5 It was fixed to the wiring board 19, the radiator 23 so as to be in contact with the metal body 9 for heat dissipation arranged, tightening fastening fixed between the radiator 23 and the wiring board 19 by the fixing section 31. または,放熱器23を複数の半導体発光素子1に共用してもよく、この場合,複数個の半導体発光素子1のそれぞれについて第1及び第2リード2,5を配線基板19に固着させ、共用される放熱器23を各半導体発光素子1の放熱用金属体9に接触するように配置し,締め付け固定部31によって放熱器23と配線基板19との間を締め付け固定する。 Or it may share the radiator 23 into a plurality of semiconductor light-emitting element 1, in this case, by fixing the first and second leads 2 and 5 for each of the plurality of semiconductor light emitting element 1 to the wiring board 19, the shared It is a radiator 23 disposed so as to be in contact with the metal body 9 for heat dissipation of the semiconductor light-emitting elements 1 is, tightening the clamping fixing between the radiator 23 and the wiring board 19 by the fixing section 31. 締め付け固定部31は,好ましくは半導体発光素子1ごとに設けられる。 Fastening part 31 is preferably provided for each semiconductor light emitting element 1.

以上の実施形態で示した種々の特徴は,互いに組み合わせることができる。 Various features shown in the above embodiments can be combined with one another. 1つの実施形態中に複数の特徴が含まれている場合,そのうちの1又は複数個の特徴を適宜抜き出して,単独で又は組み合わせて,本発明に採用することができる。 If there are one embodiment a plurality of in features, of which one or a plurality of features are extracted appropriate, either alone or in combination, may be employed in the present invention.

(a)は,本発明の第1実施形態の半導体発光素子アセンブリの平面図,(b)は,(a)のI−I断面図,(c)は,(a)のII−II断面図である。 (A) is a plan view of a semiconductor light-emitting element assembly of the first embodiment of the present invention, (b) is, II cross-sectional view, (c) is, II-II cross-sectional view of (a) of (a) it is. (a)は,本発明の第2実施形態の半導体発光素子アセンブリの平面図,(b)は,(a)のI−I断面図,(c)は,(a)のII−II断面図である。 (A) is a plan view of a semiconductor light-emitting element assembly of the second embodiment of the present invention, (b) is, II cross-sectional view, (c) is, II-II cross-sectional view of (a) of (a) it is. (a)は,本発明の第3実施形態の半導体発光素子アセンブリの平面図,(b)は,(a)のI−I断面図,(c)は,(a)のII−II断面図である。 (A), the third plane view of a semiconductor light emitting device assembly embodiment of the present invention, (b) is, II cross-sectional view, (c) is, II-II cross-sectional view of (a) of (a) it is. (a)は,本発明の第4実施形態の半導体発光素子アセンブリの平面図,(b)は,(a)のI−I断面図,(c)は,(a)のII−II断面図である。 (A) is a fourth plan view of a semiconductor light emitting device assembly embodiment of the present invention, (b) is, II cross-sectional view, (c) is, II-II cross-sectional view of (a) of (a) it is. (a)〜(e)は,本発明の第1実施形態の半導体発光素子アセンブリの製造工程を示す,図1(b)に対応する断面図である。 (A) ~ (e) show the fabrication process of the semiconductor light-emitting element assembly of the first embodiment of the present invention, is a cross-sectional view corresponding to FIG. 1 (b). 従来の半導体発光素子の一例を示す断面図である。 It is a sectional view showing an example of a conventional semiconductor light-emitting device.

符号の説明 DESCRIPTION OF SYMBOLS

1:半導体発光素子 2:第1リード 2a:第1リードの先端 2b:リードフレームの第1リード部 3:半導体発光素子チップ 5:第2リード 5a:第2リードの先端 5b:リードフレームの第2リード部 7:絶縁性接着層 9:放熱用金属体 9a:放熱用金属体の延長部(間隔保持部) 11:導電性接着層 13:ボンディングワイヤー 15:反射器 15a:反射器の反射面 16:透明樹脂 17:配線基板の開口部 19:配線基板 21:はんだ層 23:放熱器 25:配線基板の開口部 27:リードフレーム 29:リードフレームの枠部 31:締め付け固定部 33:スペーサ(間隔保持部) 51:絶縁基板 53:ダイボンド電極パターン 55:セカンド電極パターン 57:導電性接着剤 59:発光ダイオード素子 61:ボンデ 1: semiconductor light-emitting device 2: first lead 2a: first lead tip 2b: first lead portion 3 of the lead frame: a semiconductor light-emitting element chip 5: second lead 5a: second lead tip 5b: the lead frame first 2 leads 7: insulating adhesive layer 9: radiating metal member 9a: extension of the radiating metal body (space holding portion) 11: conductive adhesive layer 13: bonding wire 15: reflector 15a: the reflecting surface of the reflector 16: transparent resin 17: circuit board opening 19: wiring board 21: solder layer 23: radiator 25: circuit board opening 27: lead frame 29: the frame portion 31 of the lead frame: fastening portion 33: spacer ( interval holding section) 51: insulating substrate 53: die bonding electrode pattern 55: second electrode pattern 57: conductive adhesive 59: light emitting diode element 61: Bonde ングワイヤー 63:透光性樹脂体 Packaging Wire 63: translucent resin material

Claims (7)

  1. 第1及び第2リードと,第1リード上にダイボンディングされ,第2リードにワイヤーボンディングされた半導体発光素子チップと,絶縁性接着層を介して第1及び第2リードに固着された放熱用金属体と,第1及び第2リード上に固着され,前記チップからの光を反射させる反射器とを備える半導体発光素子と, First and second leads, is die-bonded on the first lead, a semiconductor light emitting element chip wire bonded to the second lead, for heat dissipation, which is fixed to the first and second lead via the insulating adhesive layer and the metal body is secured to the first and second on lead, a semiconductor light emitting element and a reflector for reflecting light from said chip,
    前記反射器を収容可能な開口部を有する配線基板と, A wiring board having a housing capable of opening the reflector,
    前記放熱用金属体に接触するように配置された放熱器と, And it arranged radiator so as to be in contact with the metal body for heat dissipation,
    放熱器と配線基板との間を締め付け固定する締め付け固定部とを備え, Radiator and a fastening part fastening for fixing between the wiring substrate,
    前記反射器が前記開口部に収容されるように,第1及び第2リードが前記配線基板に固着され, Wherein such reflector is accommodated in the opening, the first and second leads are fixed to the wiring board,
    前記放熱器と前記配線基板の間に,前記放熱器と前記配線基板の間の間隔を所定距離以上に保つ間隔保持部を設けたことを特徴とする半導体発光素子アセンブリ。 Wherein between radiator and of the wiring board, the semiconductor light-emitting element assembly, characterized in that the distance between the wiring board and the radiator is provided a gap holding unit to maintain a predetermined distance or more.
  2. 前記間隔保持部は,第1及び第2リードが延びる方向に直交する方向に前記放熱用金属体が延長されて形成される前記放熱用金属体の延長部によって構成される請求項1に記載のアセンブリ。 The interval holding unit, according to configured claim 1 by an extension of the radiating metal body the radiating metal body in a direction perpendicular to the direction in which the first and second leads extend is formed is extended assembly.
  3. 前記間隔保持部は,スペーサからなる請求項1に記載のアセンブリ。 The interval holding unit assembly according to claim 1 comprising a spacer.
  4. 前記スペーサは,前記締め付け固定部と,前記放熱用金属体との間に配置される請求項3に記載のアセンブリ。 The spacer includes: the fastening part, assembly according to claim 3 which is disposed between the radiating metal body.
  5. 前記半導体発光素子は,第1及び第2リードと,第1リード上にダイボンディングされ,第2リードにワイヤーボンディングされた半導体発光素子チップからなる発光モジュールを複数備え, The semiconductor light emitting element includes a first and a second lead, is die-bonded on the first lead, a plurality of light-emitting modules comprising a wire bonded semiconductor light-emitting device chip to the second lead,
    複数の発光モジュールは,第1及び第2リードが延びる方向に直交する方向に沿って並べられる請求項1に記載のアセンブリ。 The plurality of light emitting modules, assembly of claim 1, which is arranged along the direction orthogonal to the direction in which the first and second leads extend.
  6. 前記絶縁性接着層は,絶縁性接着シートからなる請求項1に記載のアセンブリ。 The insulating adhesive layer assembly according to claim 1 made of an insulating adhesive sheet.
  7. 前記絶縁性接着シートは,絶縁性支持層と,絶縁性支持層の両面に接着層とを備える請求項6に記載のアセンブリ。 The insulating adhesive sheet assembly of claim 6, comprising an insulating support layer, an adhesive layer on both sides of the insulating support layer.
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US7462880B2 (en) 2008-12-09
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US20080048204A1 (en) 2008-02-28

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