JP2007510310A5 - - Google Patents
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- Publication number
- JP2007510310A5 JP2007510310A5 JP2006538273A JP2006538273A JP2007510310A5 JP 2007510310 A5 JP2007510310 A5 JP 2007510310A5 JP 2006538273 A JP2006538273 A JP 2006538273A JP 2006538273 A JP2006538273 A JP 2006538273A JP 2007510310 A5 JP2007510310 A5 JP 2007510310A5
- Authority
- JP
- Japan
- Prior art keywords
- electrically conductive
- forming
- conductive layer
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 61
- 238000000034 method Methods 0.000 claims 52
- 239000004065 semiconductor Substances 0.000 claims 30
- 239000000758 substrate Substances 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 7
- 239000011241 protective layer Substances 0.000 claims 7
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 5
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000000615 nonconductor Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000012809 cooling fluid Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000005219 brazing Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/695,153 | 2003-10-28 | ||
| US10/695,153 US6946403B2 (en) | 2003-10-28 | 2003-10-28 | Method of making a MEMS electrostatic chuck |
| PCT/US2004/035891 WO2005045921A1 (en) | 2003-10-28 | 2004-10-28 | Method of making a mems electrostatic chuck |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007510310A JP2007510310A (ja) | 2007-04-19 |
| JP2007510310A5 true JP2007510310A5 (https=) | 2007-12-06 |
| JP4725740B2 JP4725740B2 (ja) | 2011-07-13 |
Family
ID=34549968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006538273A Expired - Fee Related JP4725740B2 (ja) | 2003-10-28 | 2004-10-28 | Ｍｅｍｓ静電チャックの製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6946403B2 (https=) |
| EP (1) | EP1678752B1 (https=) |
| JP (1) | JP4725740B2 (https=) |
| KR (1) | KR20060092245A (https=) |
| CN (1) | CN100524683C (https=) |
| DE (1) | DE602004006639T2 (https=) |
| TW (1) | TWI360856B (https=) |
| WO (1) | WO2005045921A1 (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7072166B2 (en) * | 2003-09-12 | 2006-07-04 | Axcelis Technologies, Inc. | Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage |
| KR100666039B1 (ko) * | 2003-12-05 | 2007-01-10 | 동경 엘렉트론 주식회사 | 정전척 |
| US7457097B2 (en) * | 2004-07-27 | 2008-11-25 | International Business Machines Corporation | Pressure assisted wafer holding apparatus and control method |
| US20070081880A1 (en) * | 2005-09-29 | 2007-04-12 | Riordon Benjamin B | Wafer-handling method, system, and apparatus |
| US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
| AU2007285483B2 (en) | 2006-05-11 | 2011-12-22 | Regenics As | Administration of cells and cellular extracts for rejuvenation |
| WO2008051369A2 (en) * | 2006-10-25 | 2008-05-02 | Axcelis Technologies, Inc. | Low-cost electrostatic clamp with fast declamp time and the manufacture |
| US20090115060A1 (en) * | 2007-11-01 | 2009-05-07 | Infineon Technologies Ag | Integrated circuit device and method |
| CA2723848C (en) | 2008-05-09 | 2013-01-08 | Regenics As | Method of making salmon egg cytoplasmic extracts and use for increasing collagen production in skin |
| DE102008054982A1 (de) * | 2008-12-19 | 2010-07-01 | Carl Zeiss Smt Ag | Wafer-Chuck für die EUV-Lithographie |
| US7932570B1 (en) * | 2009-11-09 | 2011-04-26 | Honeywell International Inc. | Silicon tab edge mount for a wafer level package |
| US9330952B2 (en) | 2009-12-30 | 2016-05-03 | Solexel, Inc. | Bipolar mobile electrostatic carriers for wafer processing |
| AU2011249478B2 (en) | 2010-05-06 | 2014-12-04 | Regenics As | Use of cellular extracts for skin rejuvenation |
| CN103222043B (zh) * | 2010-09-08 | 2016-10-12 | 恩特格林斯公司 | 一种高传导静电夹盘 |
| US10242890B2 (en) * | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
| NL2009874A (en) | 2011-12-23 | 2013-06-26 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
| JP6359236B2 (ja) * | 2012-05-07 | 2018-07-18 | トーカロ株式会社 | 静電チャック |
| WO2014008110A1 (en) * | 2012-07-06 | 2014-01-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
| US8569115B1 (en) | 2012-07-06 | 2013-10-29 | LuxVue Technology Corporation | Method of forming a compliant bipolar micro device transfer head with silicon electrodes |
| JP5441021B1 (ja) * | 2012-09-12 | 2014-03-12 | Ｔｏｔｏ株式会社 | 静電チャック |
| EP3459522B1 (en) | 2012-12-10 | 2021-02-17 | Regenics AS | Use of egg cellular extracts for wound treatment |
| JP6526575B2 (ja) | 2013-02-07 | 2019-06-05 | エーエスエムエル ホールディング エヌ．ブイ． | リソグラフィ装置及び方法 |
| US9878901B2 (en) | 2014-04-04 | 2018-01-30 | Analog Devices, Inc. | Fabrication of tungsten MEMS structures |
| US20160230269A1 (en) * | 2015-02-06 | 2016-08-11 | Applied Materials, Inc. | Radially outward pad design for electrostatic chuck surface |
| US10381248B2 (en) | 2015-06-22 | 2019-08-13 | Lam Research Corporation | Auto-correction of electrostatic chuck temperature non-uniformity |
| US10763142B2 (en) | 2015-06-22 | 2020-09-01 | Lam Research Corporation | System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter |
| US10386821B2 (en) * | 2015-06-22 | 2019-08-20 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
| US9673025B2 (en) * | 2015-07-27 | 2017-06-06 | Lam Research Corporation | Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control |
| US20180025931A1 (en) * | 2016-07-22 | 2018-01-25 | Applied Materials, Inc. | Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing |
| US20180102247A1 (en) * | 2016-10-06 | 2018-04-12 | Asm Ip Holding B.V. | Substrate processing apparatus and method of manufacturing semiconductor device |
| US10535505B2 (en) * | 2016-11-11 | 2020-01-14 | Lam Research Corporation | Plasma light up suppression |
| US10943808B2 (en) * | 2016-11-25 | 2021-03-09 | Applied Materials, Inc. | Ceramic electrostatic chuck having a V-shape seal band |
| US20180148835A1 (en) | 2016-11-29 | 2018-05-31 | Lam Research Corporation | Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating |
| EP3884513A4 (en) * | 2018-11-19 | 2022-08-03 | Entegris, Inc. | ELECTROSTATIC CHUCK WITH CHARGE DISCHARGE COATING |
| JP7350153B2 (ja) * | 2020-03-04 | 2023-09-25 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| US12272585B2 (en) * | 2021-04-27 | 2025-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer chuck structure with holes in upper surface to improve temperature uniformity |
| US12497697B2 (en) * | 2021-10-08 | 2025-12-16 | Applied Materials, Inc. | Layer with discrete islands formed on a substrate support |
| KR102715367B1 (ko) * | 2021-12-02 | 2024-10-08 | 세메스 주식회사 | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5103367A (en) * | 1987-05-06 | 1992-04-07 | Unisearch Limited | Electrostatic chuck using A.C. field excitation |
| JP2779950B2 (ja) * | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | 静電チャックの電圧印加方法および電圧印加装置 |
| US5452177A (en) * | 1990-06-08 | 1995-09-19 | Varian Associates, Inc. | Electrostatic wafer clamp |
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US5444597A (en) * | 1993-01-15 | 1995-08-22 | Blake; Julian G. | Wafer release method and apparatus |
| JPH07153825A (ja) * | 1993-11-29 | 1995-06-16 | Toto Ltd | 静電チャック及びこの静電チャックを用いた被吸着体の処理方法 |
| US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
| US5583736A (en) * | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
| US5792562A (en) * | 1995-01-12 | 1998-08-11 | Applied Materials, Inc. | Electrostatic chuck with polymeric impregnation and method of making |
| JP3005461B2 (ja) * | 1995-11-24 | 2000-01-31 | 日本電気株式会社 | 静電チャック |
| US5838529A (en) * | 1995-12-22 | 1998-11-17 | Lam Research Corporation | Low voltage electrostatic clamp for substrates such as dielectric substrates |
| US5810933A (en) * | 1996-02-16 | 1998-09-22 | Novellus Systems, Inc. | Wafer cooling device |
| US5958813A (en) * | 1996-11-26 | 1999-09-28 | Kyocera Corporation | Semi-insulating aluminum nitride sintered body |
| US6117246A (en) * | 1997-01-31 | 2000-09-12 | Applied Materials, Inc. | Conductive polymer pad for supporting a workpiece upon a workpiece support surface of an electrostatic chuck |
| JPH10284583A (ja) | 1997-04-04 | 1998-10-23 | Mitsubishi Electric Corp | 静電チャック除電方法及び半導体製造装置 |
| US6138745A (en) * | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
| US5969934A (en) * | 1998-04-10 | 1999-10-19 | Varian Semiconductor Equipment Associats, Inc. | Electrostatic wafer clamp having low particulate contamination of wafers |
| US6149774A (en) * | 1998-06-10 | 2000-11-21 | Delsys Pharmaceutical Corporation | AC waveforms biasing for bead manipulating chucks |
| JP3323135B2 (ja) * | 1998-08-31 | 2002-09-09 | 京セラ株式会社 | 静電チャック |
| TW432453B (en) * | 1998-11-12 | 2001-05-01 | Applied Materials Inc | Apparatus for protecting a substrate support surface and method of fabricating same |
| US6067222A (en) * | 1998-11-25 | 2000-05-23 | Applied Materials, Inc. | Substrate support apparatus and method for fabricating same |
| US6236555B1 (en) * | 1999-04-19 | 2001-05-22 | Applied Materials, Inc. | Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle |
| JP3805134B2 (ja) * | 1999-05-25 | 2006-08-02 | 東陶機器株式会社 | 絶縁性基板吸着用静電チャック |
| JP3859937B2 (ja) * | 2000-06-02 | 2006-12-20 | 住友大阪セメント株式会社 | 静電チャック |
| JP2002009139A (ja) * | 2000-06-20 | 2002-01-11 | Nikon Corp | 静電チャック |
| WO2002001611A2 (en) * | 2000-06-23 | 2002-01-03 | Applied Materials, Inc. | Electrostatic chuck and method of fabricating the same |
-
2003
- 2003-10-28 US US10/695,153 patent/US6946403B2/en not_active Expired - Fee Related
-
2004
- 2004-10-27 TW TW093132546A patent/TWI360856B/zh not_active IP Right Cessation
- 2004-10-28 CN CNB200480032031XA patent/CN100524683C/zh not_active Expired - Fee Related
- 2004-10-28 DE DE602004006639T patent/DE602004006639T2/de not_active Expired - Lifetime
- 2004-10-28 KR KR1020067007513A patent/KR20060092245A/ko not_active Withdrawn
- 2004-10-28 WO PCT/US2004/035891 patent/WO2005045921A1/en not_active Ceased
- 2004-10-28 EP EP04796693A patent/EP1678752B1/en not_active Expired - Lifetime
- 2004-10-28 JP JP2006538273A patent/JP4725740B2/ja not_active Expired - Fee Related
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