JP2007501333A5 - - Google Patents
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- JP2007501333A5 JP2007501333A5 JP2006533061A JP2006533061A JP2007501333A5 JP 2007501333 A5 JP2007501333 A5 JP 2007501333A5 JP 2006533061 A JP2006533061 A JP 2006533061A JP 2006533061 A JP2006533061 A JP 2006533061A JP 2007501333 A5 JP2007501333 A5 JP 2007501333A5
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- JP
- Japan
- Prior art keywords
- targets
- voltage
- target
- substrate
- alternating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 74
- 230000008021 deposition Effects 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 51
- 238000000151 deposition Methods 0.000 claims 30
- 239000003990 capacitor Substances 0.000 claims 16
- 238000000034 method Methods 0.000 claims 16
- 238000004804 winding Methods 0.000 claims 7
- 230000001186 cumulative effect Effects 0.000 claims 3
- 230000005684 electric field Effects 0.000 claims 1
- 230000001960 triggered effect Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/446,005 US7179350B2 (en) | 2003-05-23 | 2003-05-23 | Reactive sputtering of silicon nitride films by RF supported DC magnetron |
| US10/446,005 | 2003-05-23 | ||
| PCT/US2004/015115 WO2004107411A2 (en) | 2003-05-23 | 2004-05-12 | Deposition apparatus and method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007501333A JP2007501333A (ja) | 2007-01-25 |
| JP2007501333A5 true JP2007501333A5 (https=) | 2007-08-02 |
| JP5324744B2 JP5324744B2 (ja) | 2013-10-23 |
Family
ID=33450968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006533061A Expired - Fee Related JP5324744B2 (ja) | 2003-05-23 | 2004-05-12 | 付着装置及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7179350B2 (https=) |
| EP (1) | EP1634317A2 (https=) |
| JP (1) | JP5324744B2 (https=) |
| TW (1) | TW200502426A (https=) |
| WO (1) | WO2004107411A2 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7758982B2 (en) * | 2005-09-02 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | SiN overcoat for perpendicular magnetic recording media |
| US7517437B2 (en) * | 2006-03-29 | 2009-04-14 | Applied Materials, Inc. | RF powered target for increasing deposition uniformity in sputtering systems |
| US20080083611A1 (en) * | 2006-10-06 | 2008-04-10 | Tegal Corporation | High-adhesive backside metallization |
| US20090246385A1 (en) * | 2008-03-25 | 2009-10-01 | Tegal Corporation | Control of crystal orientation and stress in sputter deposited thin films |
| US8808513B2 (en) * | 2008-03-25 | 2014-08-19 | Oem Group, Inc | Stress adjustment in reactive sputtering |
| US8482375B2 (en) * | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
| GB2473655A (en) * | 2009-09-21 | 2011-03-23 | Mantis Deposition Ltd | Magnetron sputtering techiques and apparatus |
| WO2012095961A1 (ja) * | 2011-01-12 | 2012-07-19 | 日新電機株式会社 | プラズマ装置 |
| US20170178878A1 (en) | 2015-12-21 | 2017-06-22 | IonQuest LLC | Electrically and Magnetically Enhanced Ionized Physical Vapor Deposition Unbalanced Sputtering Source |
| US11359274B2 (en) | 2015-12-21 | 2022-06-14 | IonQuestCorp. | Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source |
| US12217949B2 (en) | 2015-12-21 | 2025-02-04 | Ionquest Corp. | Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films |
| US11823859B2 (en) * | 2016-09-09 | 2023-11-21 | Ionquest Corp. | Sputtering a layer on a substrate using a high-energy density plasma magnetron |
| US20210230739A1 (en) * | 2020-01-27 | 2021-07-29 | Applied Materials, Inc. | Physical Vapor Deposition Apparatus And Methods With Gradient Thickness Target |
| CN116155231A (zh) * | 2023-02-28 | 2023-05-23 | 苏州敏声新技术有限公司 | 一种体声波谐振器及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63230872A (ja) * | 1984-05-17 | 1988-09-27 | バリアン・アソシエイツ・インコ−ポレイテツド | タ−ゲツト及び磁気的に強められたｒ．ｆ．バイアスを分離する分離制限磁場を有するマグネトロン・スパツタ装置 |
| US4661228A (en) * | 1984-05-17 | 1987-04-28 | Varian Associates, Inc. | Apparatus and method for manufacturing planarized aluminum films |
| JPH01116068A (ja) * | 1987-10-28 | 1989-05-09 | Hitachi Ltd | バイアススパッタ装置 |
| US4810347A (en) | 1988-03-21 | 1989-03-07 | Eaton Corporation | Penning type cathode for sputter coating |
| JPH02225662A (ja) * | 1989-02-27 | 1990-09-07 | Tokuda Seisakusho Ltd | スパッタ装置 |
| DE4127262C1 (en) | 1991-08-17 | 1992-06-04 | Forschungsges Elektronenstrahl | Sputtering equipment for coating large substrates with (non)ferromagnetic material - consisting of two sub-targets electrically isolated and cooling plates whose gap in between is that in region of pole units |
| US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
| DE19848636C2 (de) * | 1998-10-22 | 2001-07-26 | Fraunhofer Ges Forschung | Verfahren zur Überwachung einer Wechselspannungs-Entladung an einer Doppelelektrode |
| JP2001003166A (ja) * | 1999-04-23 | 2001-01-09 | Nippon Sheet Glass Co Ltd | 基体表面に被膜を被覆する方法およびその方法による基体 |
| EP1235947A4 (en) | 1999-10-15 | 2009-04-15 | Advanced Energy Ind Inc | METHOD AND DEVICE FOR POLARIZING SUBSTRATE IN MULTIPLE ELECTRODE SPUTTERING SYSTEMS |
| US6824653B2 (en) * | 2003-02-21 | 2004-11-30 | Agilent Technologies, Inc | Magnetron with controlled DC power |
-
2003
- 2003-05-23 US US10/446,005 patent/US7179350B2/en not_active Expired - Lifetime
-
2004
- 2004-05-12 WO PCT/US2004/015115 patent/WO2004107411A2/en not_active Ceased
- 2004-05-12 JP JP2006533061A patent/JP5324744B2/ja not_active Expired - Fee Related
- 2004-05-12 EP EP04752195A patent/EP1634317A2/en not_active Withdrawn
- 2004-05-20 TW TW093114246A patent/TW200502426A/zh unknown
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