JP2007306640A - Protective device for power conversion apparatus - Google Patents

Protective device for power conversion apparatus Download PDF

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JP2007306640A
JP2007306640A JP2006129217A JP2006129217A JP2007306640A JP 2007306640 A JP2007306640 A JP 2007306640A JP 2006129217 A JP2006129217 A JP 2006129217A JP 2006129217 A JP2006129217 A JP 2006129217A JP 2007306640 A JP2007306640 A JP 2007306640A
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temperature
semiconductor element
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power
power conversion
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JP4471953B2 (en
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Shigeru Kojima
繁 児島
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To increase the output power of a power conversion apparatus by setting an overvoltage level to a preset overvoltage level when the detected temperature of a semiconductor element exceeds the temperature when a withstand voltage value starts lowering. <P>SOLUTION: The protective device includes a voltage detection means 10 for detecting DC voltage, a temperature detecting means 15 for detecting the temperature of the semiconductor element 7a of the power conversion apparatus 7, and an overvoltage level setting means 16 for setting the overvoltage level in view of the withstand voltage value corresponding to the detected temperature when the detected temperature detected by the temperature detecting means 15 is lower than the temperature when the withstand voltage of the semiconductor element 7a starts lowering, while setting the overvoltage level to the preset overvoltage level when the detected temperature is higher than the temperature when the withstand voltage value starts lowering. Furthermore, the device includes a voltage comparing means 17 for outputting an over-voltage signal conducting a semiconductor switch 03 when the DC voltage exceeds the overvoltage level. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

この発明は、直流電力間、交流電力間及び直流電力と交流電力との相互間で電力変換を行う電力変換装置の保護装置に関するものである。   The present invention relates to a protection device for a power conversion device that performs power conversion between DC power, between AC power, and between DC power and AC power.

従来の電力変換装置の保護装置は、電力変換装置の入力側に設けたフィルタコンデンサの電圧が過電圧レベルを超えると、電力変換装置へゲートオフ信号を与えると共に半導体スイッチとしての短絡用ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）をオンにして制限抵抗器を介してフィルタコンデンサを短絡し、直流電力を制限抵抗器に消費させる（例えば、特許文献１参照）。   In a conventional power converter protection device, when the voltage of a filter capacitor provided on the input side of the power converter exceeds an overvoltage level, a gate-off signal is given to the power converter and a short-circuit IGBT (Insulated Gate Bipolar) as a semiconductor switch is provided. (Transistor) is turned on, the filter capacitor is short-circuited via the limiting resistor, and DC power is consumed by the limiting resistor (see, for example, Patent Document 1).

特開平８−１２６１０１号公報（第４頁、図１）JP-A-8-126101 (page 4, FIG. 1)

従来の電力変換装置の保護装置では、電力変換装置を構成している半導体素子の温度に関わらずにフィルタコンデンサの電圧が過電圧レベルを超えると、直流電力を制限抵抗器に消費させるように一定の過電圧レベルが設定されている。従って、低温地域で電力変換装置を使用する場合に、半導体素子の温度が耐電圧値の低下が始まる温度以下で始動されるときに半導体素子が過電圧で破壊されるのを防止するために、過電圧レベルを電力変換装置が始動されるときの半導体素子の温度を考慮した耐電圧値に設定する必要がある。このため、過電圧レベルは電力変換装置が始動して半導体素子の温度が上昇しても耐電圧値の低下が始まる温度以下の耐電圧値を考慮した低い値に設定されているので、耐電圧値の低下が始まる温度以上においても電力変換装置の出力電力が抑制されるという問題点があった。   In the conventional power converter protection device, when the voltage of the filter capacitor exceeds the overvoltage level regardless of the temperature of the semiconductor element constituting the power converter, a constant resistor is consumed so that the DC power is consumed by the limiting resistor. Overvoltage level is set. Therefore, when using the power conversion device in a low-temperature region, the overvoltage is used to prevent the semiconductor element from being destroyed by the overvoltage when the temperature of the semiconductor element is started below the temperature at which the withstand voltage value starts to decrease. It is necessary to set the level to a withstand voltage value in consideration of the temperature of the semiconductor element when the power converter is started. For this reason, the overvoltage level is set to a low value in consideration of the withstand voltage value below the temperature at which the withstand voltage value starts to decrease even if the temperature of the semiconductor element rises when the power converter is started. There is a problem that the output power of the power conversion device is suppressed even at a temperature higher than the temperature at which the decrease starts.

この発明は、上述のような課題を解決するためになされたもので、電力変換装置の始動時に検出された半導体素子の検出温度が半導体素子の耐電圧値が低下を始める温度以下のときの過電圧レベルを、検出温度を考慮した耐電圧値を設定し、検出温度が耐電圧値の低下が始まる温度以上では予め設定した過電圧レベルに設定することにより電力変換装置の出力電力の増大を図ることができる電力変換装置の保護装置を提供することを目的としたものである。   The present invention has been made to solve the above-described problems, and an overvoltage when the detected temperature of the semiconductor element detected at the time of starting the power conversion device is equal to or lower than the temperature at which the withstand voltage value of the semiconductor element starts to decrease. The level is set to a withstand voltage value in consideration of the detected temperature, and when the detected temperature is equal to or higher than a temperature at which the withstand voltage value starts to decrease, the output power of the power conversion device can be increased by setting the level to a preset overvoltage level. An object of the present invention is to provide a protective device for a power conversion device that can be used.

この発明に係わる電力変換装置の保護装置は、半導体素子で構成されて入力側又は出力側の少なくともいずれかが直流電力となる電力変換を行う電力変換装置の直流電圧を検出し、直流電圧が予め設定された過電圧レベルを越えると半導体スイッチが導通されて直流電力を制限抵抗器に消費させるようにした電力変換装置の保護装置において、直流電圧を検出する電圧検出手段と、電力変換装置の半導体素子の温度を検出する温度検出手段と、この温度検出手段が検出した検出温度が半導体素子の耐電圧値が低下を始める温度以下のときの過電圧レベルを検出温度に対応した耐電圧値を考慮して設定し、検出温度が耐電圧値の低下が始まる温度以上では予め設定した過電圧レベルにする過電圧レベル設定手段と、直流電圧が過電圧レベルを越えると半導体スイッチを導通させる過電圧信号を出力する電圧比較手段とを備えたものである。   A protection device for a power conversion device according to the present invention detects a DC voltage of a power conversion device that is configured by a semiconductor element and performs power conversion in which at least one of an input side and an output side becomes DC power, and the DC voltage is In a protection device for a power conversion device in which a semiconductor switch is turned on when a set overvoltage level is exceeded and DC power is consumed by a limiting resistor, voltage detection means for detecting DC voltage, and a semiconductor element of the power conversion device The temperature detecting means for detecting the temperature of the semiconductor element, and the overvoltage level when the detected temperature detected by the temperature detecting means is equal to or lower than the temperature at which the withstand voltage value of the semiconductor element starts to decrease is considered in consideration of the withstand voltage value corresponding to the detected temperature. Set the overvoltage level setting means to make the overvoltage level set in advance when the detected temperature is higher than the temperature at which the withstand voltage value starts to drop, and the DC voltage exceeds the overvoltage level. That when it is that a voltage comparing means for outputting an overvoltage signal for conducting semiconductor switches.

この発明は、半導体素子の検出温度が半導体素子の耐電圧値が低下を始める温度以下のときの過電圧レベルを検出温度に対応した耐電圧値を考慮して設定し、検出温度が耐電圧値の低下が始まる温度以上になると予め設定した過電圧レベルに設定することにより、半導体素子の温度が耐電圧値の低下が始まる温度以下で電力変換装置が始動されても半導体素子が過電圧で破壊されることなく、半導体素子の温度が耐電圧値の低下が始まる温度以上では電力変換装置の出力電力を増大させることができる。   In the present invention, the overvoltage level when the detected temperature of the semiconductor element is equal to or lower than the temperature at which the withstand voltage value of the semiconductor element starts to decrease is set in consideration of the withstand voltage value corresponding to the detected temperature. By setting the pre-set overvoltage level above the temperature at which the decrease starts, even if the power converter is started when the temperature of the semiconductor element is below the temperature at which the withstand voltage value starts to decrease, the semiconductor element is destroyed by the overvoltage. The output power of the power converter can be increased when the temperature of the semiconductor element is higher than the temperature at which the withstand voltage value starts to decrease.

図１は、この発明を実施するための実施の形態１における鉄道車両に適用された電力変換装置の保護装置の構成図、図２は半導体素子の耐電圧特性を示す説明図である。図１及び図２において、地上側の変電所（図示せず）から架線１を通して送電された直流電力は、車上側のパンタグラフ２、高速度遮断器３、電磁接触器４、電磁接触器４と並列接続された抵抗器５、及びフィルタリアクトル６を介して電力変換装置７に供給され、車輪８からレール９を介して変電所へ帰還する。電力変換装置７はＩＧＢＴ等の半導体素子７ａで構成されている。電力変換装置７の直流電力側に電圧検出手段１０、フィルタコンデンサ１１、及び制限抵抗器１２とＩＧＢＴ等の半導体スイッチ１３との直列回路が接続されている。電力変換装置７の３相交流電力が車両駆動用３相誘導電動機１４に供給される。半導体素子７ａの近傍に配置された温度検出手段１５の検出温度が過電圧レベル設定手段１６に入力される。なお、温度検出手段１５は赤外線等を利用して半導体素子７ａの温度を検出する。過電圧レベル設定手段１６には半導体素子７ａが過電圧で破壊されるのを防止するために予め過電圧レベルが設定されている。なお、過電圧レベル設定手段１６は図２に示す半導体素子７ａの温度と耐電圧値とを対応させたテーブル表を備えている。過電圧レベル設定手段１６で設定された過電圧レベルが電圧比較手段１７に入力される。電圧比較手段１７から出力された過電圧信号により半導体スイッチ１３が導通される。   FIG. 1 is a configuration diagram of a protection device for a power conversion device applied to a railway vehicle in Embodiment 1 for carrying out the present invention, and FIG. 2 is an explanatory diagram showing a withstand voltage characteristic of a semiconductor element. 1 and 2, DC power transmitted from a ground-side substation (not shown) through an overhead wire 1 is divided into a pantograph 2, a high-speed circuit breaker 3, an electromagnetic contactor 4, and an electromagnetic contactor 4 on the upper side of the vehicle. It is supplied to the power converter 7 via the resistor 5 and the filter reactor 6 connected in parallel, and returns from the wheel 8 to the substation via the rail 9. The power converter 7 is composed of a semiconductor element 7a such as an IGBT. A series circuit of a voltage detection means 10, a filter capacitor 11, and a limiting resistor 12 and a semiconductor switch 13 such as an IGBT is connected to the DC power side of the power converter 7. The three-phase AC power of the power conversion device 7 is supplied to the three-phase induction motor 14 for driving the vehicle. The detected temperature of the temperature detecting means 15 arranged in the vicinity of the semiconductor element 7 a is input to the overvoltage level setting means 16. The temperature detection means 15 detects the temperature of the semiconductor element 7a using infrared rays or the like. The overvoltage level setting means 16 is preset with an overvoltage level in order to prevent the semiconductor element 7a from being destroyed by the overvoltage. The overvoltage level setting means 16 includes a table that associates the temperature of the semiconductor element 7a and the withstand voltage value shown in FIG. The overvoltage level set by the overvoltage level setting means 16 is input to the voltage comparison means 17. The semiconductor switch 13 is turned on by the overvoltage signal output from the voltage comparison means 17.

次に動作について説明する。図１及び図２において電力変換装置７が温度T１〜T３の範囲で運転されるとする。架線１からパンタグラグ２、高速度遮断器４及びフィルタリアクトル６を介して電力変換装置７に直流電力が供給されている。電力変換装置７から出力された３相交流電力により３相誘導電動機１４が駆動される。
過電圧レベルは半導体素子７ａの耐電圧値が低下を始める温度Ｔ２以下では、温度Ｔ２における耐電圧値Ｖ２を参照して予め過電圧レベル設定手段１６で設定されている。
しかし、例えば−４０℃等の極低温域温度Ｔ１で電力変換装置７が始動されるときは、半導体素子７ａも同様に極低温となっているので耐電圧値が図２に示すようにＶ１に低下している。
温度検出手段１５で検出された半導体素子７ａの検出温度が過電圧レベル設定手段１６に入力される。過電圧レベル設定手段１６は、検出温度が半導体素子７ａの耐電圧値が低下を始める温度Ｔ２以下で、例えば温度Ｔ１であれば過電圧レベルは検出温度Ｔ１を考慮した耐電圧値Ｖ１に設定される。電圧比較手段１７では電圧検出手段１０で検出された直流電圧が過電圧レベルを超えると半導体スイッチ１３を導通させる過電圧信号を出力する。過電圧信号で半導体スイッチ１３が導通されることにより、電力変換装置７に供給されている直流電力が制限抵抗器１２で消費されるので、半導体素子７ａに耐電圧値Ｖ１以上の過電圧が印加されるのを防止する。 Next, the operation will be described. Power converter 7 in FIG. 1 and FIG. 2 is to be operated in a temperature range of T 1 through T 3. DC power is supplied from the overhead wire 1 to the power converter 7 through the pan tag lug 2, the high-speed circuit breaker 4, and the filter reactor 6. The three-phase induction motor 14 is driven by the three-phase AC power output from the power conversion device 7.
Overvoltage level is below temperature T 2 of the withstand voltage value of the semiconductor element 7a starts to decrease is preset overvoltage level setting unit 16 with reference to the withstand voltage value V 2 at the temperature T 2.
However, when the power conversion device 7 is started at a cryogenic temperature T 1 such as −40 ° C., for example, the semiconductor element 7a is also at a very low temperature, so that the withstand voltage value is V as shown in FIG. It has dropped to 1 .
The detected temperature of the semiconductor element 7 a detected by the temperature detection means 15 is input to the overvoltage level setting means 16. Overvoltage level setting means 16, the detection temperature of the withstand voltage of the semiconductor element 7a below temperature T 2 which begins to fall, for example, over-voltage level when the temperature T 1 of the withstand voltage value V 1 in consideration of the detected temperatures T 1 Is set. When the DC voltage detected by the voltage detector 10 exceeds the overvoltage level, the voltage comparator 17 outputs an overvoltage signal that makes the semiconductor switch 13 conductive. By the semiconductor switch 13 is turned by an overvoltage signal, the DC power supplied to the power converter 7 is consumed by the limiting resistor 12, the withstand voltage value V 1 or overvoltage is applied to the semiconductor element 7a Is prevented.

以上のように、温度検出手段１５で検出された半導体素子７ａの検出温度が半導体素子７ａの耐電圧値が低下を始める温度以下で電力変換装置が始動されても半導体素子７ａが過電圧で破壊されることがなく、検出温度が耐電圧値の低下が始まる温度以上では電力変換装置の出力電力の増大を図ることができる。
実施の形態１において、鉄道車両に適用された直流電力から交流電力に変換する電力変換装置の保護装置について説明したが、交流→直流に変換する電力変換装置に適用しても同様の効果を期待することができる。
また、直流電力から交流電力を介して直流電力に変換する電力変換装置に適用しても同様の効果を期待することができる。
さらに、実施の形態１において、鉄道車両に適用された電力変換装置の保護装置について説明したが、入力側又は出力側の少なくとも何れかが直流である電力変換装置７であれば、鉄道車両以外に適用しても同様の効果を期待することができる。 As described above, even if the power conversion device is started when the detected temperature of the semiconductor element 7a detected by the temperature detecting means 15 is lower than the temperature at which the withstand voltage value of the semiconductor element 7a starts to decrease, the semiconductor element 7a is destroyed by overvoltage. Therefore, when the detected temperature is equal to or higher than the temperature at which the withstand voltage value starts to decrease, the output power of the power converter can be increased.
In the first embodiment, the protection device for the power conversion device that converts the DC power applied to the railway vehicle to the AC power has been described. However, the same effect can be expected when applied to a power conversion device that converts AC to DC. can do.
Moreover, the same effect can be expected even when applied to a power converter that converts DC power to DC power via AC power.
Furthermore, in Embodiment 1, the protection device for the power conversion device applied to the railway vehicle has been described. However, if the power conversion device 7 has at least one of the input side and the output side that is direct current, other than the rail vehicle. Even if applied, the same effect can be expected.

実施の形態２．
図３は、この発明を実施するための実施の形態２における鉄道車両に適用された電力変換装置の保護装置の構成図である。図３において、１〜９、１１〜１４は実施の形態１のものと同様のものである。温度検出手段１５の検出温度が過電流レベル設定手段１８に入力される。過電流レベル設定手段１８で設定された過電流レベルは電流比較手段１９へ入力される。さらに、電力変換装置７の交流側の交流電流が電流検出手段２０で検出されて電流比較手段１９へ入力される。交流電流を検出することにより半導体素子７ａに流れている電流を検出できる。電流比較手段１９は交流電流が過電流レベルを超えると過電流信号を出力して半導体スイッチ１３を導通させる。
次に、動作について説明する。図４は電力変換装置の半導体素子の電流が遮断されたときに半導体素子に印加される電圧を示す説明図、図５は遮断された電流とオーバーシュート電圧との関係を示す説明図である。
図２から図５において、高速度遮断器３が投入されて電力変換装置７へ直流電力が供給されると、電力変換装置７で３相交流電力が出力されて３相誘導電動機１４が駆動される。
ここで、半導体素子７ａに流れている出力電流が遮断されると、図４に示すように直流側の定常時の直流電圧Ｖに対してオーバーシュート電圧ΔＶが発生し、半導体素子７ａにＶ＋ΔＶの電圧が印加される。このオーバーシュート電圧ΔＶは図５に示すように遮断された交流電流にほぼ比例する。
過電流レベル設定手段１８は、図５に示す遮断した交流電流とオーバーシュート電圧ΔＶとを対応させたテーブル表を備えている。温度検出手段１５で検出された検出温度が過電流レベル設定手段１８に入力されると、検出温度が半導体素子７ａの耐電圧値が低下を始める温度Ｔ２以下であれば、半導体素子７ａに流れている電流を遮断したときに半導体素子７ａに印加される電圧Ｖ＋ΔＶが検出温度における耐電圧値以下になるように過電流レベルを設定する。過電流レベル設定手段１８に入力された検出温度が半導体素子７ａの耐電圧値が低下を始める温度以上であれば予め設定された過電流レベルにする。
電流比較手段１９では過電流レベル設定手段１８で設定された過電流レベルと電流検出手段２０で検出された交流電流とを比較し、交流電流が過電流レベルを超えると半導体スイッチ１３へ過電流信号を与えて半導体スイッチ１３を導通させ、直流電力のエネルギーを制限抵抗器１２に消費させる。 Embodiment 2. FIG.
FIG. 3 is a configuration diagram of a protection device for a power conversion device applied to a railway vehicle according to Embodiment 2 for carrying out the present invention. In FIG. 3, 1 to 9 and 11 to 14 are the same as those in the first embodiment. The temperature detected by the temperature detection means 15 is input to the overcurrent level setting means 18. The overcurrent level set by the overcurrent level setting means 18 is input to the current comparison means 19. Further, the alternating current on the alternating current side of the power converter 7 is detected by the current detection means 20 and input to the current comparison means 19. By detecting the alternating current, the current flowing through the semiconductor element 7a can be detected. When the alternating current exceeds the overcurrent level, the current comparing means 19 outputs an overcurrent signal to make the semiconductor switch 13 conductive.
Next, the operation will be described. FIG. 4 is an explanatory diagram showing the voltage applied to the semiconductor element when the current of the semiconductor element of the power conversion device is interrupted, and FIG. 5 is an explanatory diagram showing the relationship between the interrupted current and the overshoot voltage.
2 to 5, when the high-speed circuit breaker 3 is turned on and DC power is supplied to the power converter 7, the power converter 7 outputs three-phase AC power to drive the three-phase induction motor 14. The
Here, when the output current flowing through the semiconductor element 7a is interrupted, an overshoot voltage ΔV is generated with respect to the steady DC voltage V on the DC side as shown in FIG. 4, and V + ΔV is generated in the semiconductor element 7a. A voltage is applied. This overshoot voltage ΔV is substantially proportional to the interrupted AC current as shown in FIG.
The overcurrent level setting means 18 includes a table that associates the interrupted AC current and the overshoot voltage ΔV shown in FIG. When the detection temperature detected by the temperature detector 15 is input to the overcurrent level setting unit 18, if the detected temperature is the withstand voltage of the semiconductor element 7a is less temperature T 2 which begins to fall, it flows into the semiconductor device 7a The overcurrent level is set so that the voltage V + ΔV applied to the semiconductor element 7a when the current is cut off is equal to or lower than the withstand voltage value at the detected temperature. If the detected temperature input to the overcurrent level setting means 18 is equal to or higher than the temperature at which the withstand voltage value of the semiconductor element 7a starts to decrease, the overcurrent level is set in advance.
The current comparison means 19 compares the overcurrent level set by the overcurrent level setting means 18 with the alternating current detected by the current detection means 20, and if the alternating current exceeds the overcurrent level, the overcurrent signal is sent to the semiconductor switch 13. And the semiconductor switch 13 is turned on, and the energy of the DC power is consumed by the limiting resistor 12.

以上のように、温度検出手段１５で検出された半導体素子７ａの検出温度が半導体素子７ａの耐電圧値が低下を始める温度以下で半導体素子７ａに流れている電流を遮断したときに半導体素子７ａに印加される電圧Ｖ＋ΔＶが検出温度における半導体素子７ａの耐電圧値以下になるように過電流レベルを設定することにより、半導体素子７ａが過電圧で破壊されるのを防止することができる。さらに、検出温度が耐電圧値の低下が始まる温度以上では予め設定した過電流レベルに設定することにより、半導体素子７ａに印加される電圧を高くすることができるので出力電力の増大を図ることができる。   As described above, when the current flowing through the semiconductor element 7a is cut off when the detected temperature of the semiconductor element 7a detected by the temperature detecting means 15 is equal to or lower than the temperature at which the withstand voltage value of the semiconductor element 7a starts to decrease, the semiconductor element 7a By setting the overcurrent level so that the voltage V + ΔV applied to is equal to or lower than the withstand voltage value of the semiconductor element 7a at the detected temperature, the semiconductor element 7a can be prevented from being destroyed by the overvoltage. Furthermore, when the detected temperature is equal to or higher than the temperature at which the withstand voltage value starts to decrease, the voltage applied to the semiconductor element 7a can be increased by setting the preset overcurrent level, so that the output power can be increased. it can.

実施の形態２において、鉄道車両に適用された直流電力から交流電力に変換する電力変換装置の保護装置について説明したが、交流→直流に変換する電力変換装置に適用しても同様の効果を期待することができる。
また、直流電力から交流電力を介して直流電力に変換する電力変換装置に適用しても同様の効果を期待することができる。
さらに、実施の形態２において、鉄道車両に適用された電力変換装置の保護装置について説明したが、入力側又は出力側の少なくとも何れかが直流である電力変換装置７であれば、鉄道車両以外に適用しても同様の効果を期待することができる。 In the second embodiment, the protection device for the power conversion device that converts the DC power applied to the railway vehicle to the AC power has been described. However, the same effect can be expected when applied to a power conversion device that converts AC to DC. can do.
Moreover, the same effect can be expected even when applied to a power converter that converts DC power to DC power via AC power.
Furthermore, in Embodiment 2, although the protection apparatus of the power converter device applied to the railway vehicle was described, if the power converter apparatus 7 in which at least one of the input side or the output side is a direct current is used, other than the railway vehicle Even if applied, the same effect can be expected.

この発明を実施するための実施の形態１における鉄道車両に適用された電力変換装置の保護装置の構成図である。It is a block diagram of the protection apparatus of the power converter device applied to the railway vehicle in Embodiment 1 for implementing this invention. 半導体素子の耐電圧特性を示す説明図である。It is explanatory drawing which shows the dielectric strength characteristic of a semiconductor element. この発明を実施するための実施の形態２における鉄道車両に適用された電力変換装置の保護装置の構成図である。It is a block diagram of the protection apparatus of the power converter device applied to the railway vehicle in Embodiment 2 for implementing this invention. 図３における電力変換装置の半導体素子の電流が遮断されたときに半導体素子に印加される電圧を示す説明図である。It is explanatory drawing which shows the voltage applied to a semiconductor element when the electric current of the semiconductor element of the power converter device in FIG. 3 is interrupted | blocked. 図３の電力変換装置において遮断された電流とオーバーシュート電圧との関係を示す説明図である。It is explanatory drawing which shows the relationship between the electric current interrupted | blocked in the power converter device of FIG. 3, and an overshoot voltage.

符号の説明Explanation of symbols

７ 電力変換装置、７ａ 半導体素子、１０ 電圧検出手段、１２ 制限抵抗器、
１３ 半導体スイッチ、１５ 温度検出手段、１６ 過電圧レベル設定手段、
１７ 電圧比較手段、１８ 過電流レベル設定手段、１９ 電流比較手段、
２０ 電流検出手段。 7 power conversion device, 7a semiconductor element, 10 voltage detection means, 12 limiting resistor,
13 semiconductor switch, 15 temperature detecting means, 16 overvoltage level setting means,
17 voltage comparison means, 18 overcurrent level setting means, 19 current comparison means,
20 Current detection means.

Claims (2)

半導体素子で構成されて入力側又は出力側の少なくともいずれかが直流電力となる電力変換を行う電力変換装置の直流電圧を検出し、上記直流電圧が予め設定された過電圧レベルを越えると半導体スイッチが導通されて直流電力を制限抵抗器に消費させるようにした電力変換装置の保護装置において、上記直流電圧を検出する電圧検出手段と、上記電力変換装置の上記半導体素子の温度を検出する温度検出手段と、この温度検出手段が検出した検出温度が上記半導体素子の耐電圧値が低下を始める温度以下のときの過電圧レベルを上記検出温度に対応した耐電圧値を考慮して設定し、上記検出温度が耐電圧値の低下が始まる温度以上では予め設定した過電圧レベルにする過電圧レベル設定手段と、上記直流電圧が上記過電圧レベルを越えると上記半導体スイッチを導通させる過電圧信号を出力する電圧比較手段とを備えたことを特徴とする電力変換装置の保護装置。   When a DC voltage of a power converter configured by a semiconductor element and performing power conversion in which at least one of the input side and the output side becomes DC power is detected and the DC voltage exceeds a preset overvoltage level, the semiconductor switch In a protection device for a power conversion device which is made conductive and consumes DC power to a limiting resistor, voltage detection means for detecting the DC voltage, and temperature detection means for detecting the temperature of the semiconductor element of the power conversion device And an overvoltage level when the detected temperature detected by the temperature detecting means is equal to or lower than a temperature at which the withstand voltage value of the semiconductor element starts to decrease is set in consideration of the withstand voltage value corresponding to the detected temperature, and the detected temperature Overvoltage level setting means for setting a pre-set overvoltage level above the temperature at which the withstand voltage value starts decreasing, and when the DC voltage exceeds the overvoltage level Serial protection system for a power conversion apparatus characterized by comprising a voltage comparing means for outputting an overvoltage signal for conducting semiconductor switches. 半導体素子で構成されて入力側又は出力側の少なくともいずれかが直流電力となる電力変換を行う電力変換装置の交流電流を検出し、上記交流電流が予め設定された過電流レベルを越えると半導体スイッチが導通されて直流電力を制限抵抗器に消費させるようにした電力変換装置の保護装置において、上記交流電流を検出する電流検出手段と、上記電力変換装置の上記半導体素子の温度を検出する温度検出手段と、この温度検出手段が検出した検出温度が上記半導体素子の耐電圧値が低下を始める温度以下のときに上記交流電流を遮断したときに発生するオーバーシュート電圧を含めて上記半導体素子に印加される電圧が、上記温度検出手段が検出した検出温度を考慮した耐電圧値以下になるように過電流レベルを設定する過電流レベル設定手段と、上記出力電流が上記過電流レベルになると上記半導体スイッチを導通させる過電流信号を出力する電流比較手段とを備えたことを特徴とする電力変換装置の保護装置。   A semiconductor switch comprising a semiconductor element that detects an alternating current of a power conversion device that performs power conversion in which at least one of an input side and an output side becomes direct-current power, and the alternating current exceeds a preset overcurrent level. In the protection device for the power conversion device, in which the DC power is consumed by the limiting resistor, the current detection means for detecting the alternating current and the temperature detection for detecting the temperature of the semiconductor element of the power conversion device And an overshoot voltage generated when the alternating current is cut off when the detected temperature detected by the temperature detecting means is equal to or lower than a temperature at which the withstand voltage value of the semiconductor element starts to decrease. Overcurrent level setting that sets the overcurrent level so that the detected voltage is equal to or less than the withstand voltage value considering the detected temperature detected by the temperature detecting means. Stage and protection system for a power converter in which the output current is characterized in that a current comparing means for outputting an overcurrent signal thereby turning on the semiconductor switch becomes to the overcurrent level.
JP2006129217A 2006-05-08 2006-05-08 Protection device for power converter Expired - Fee Related JP4471953B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008081722A1 (en) * 2007-01-04 2008-07-10 Toyota Jidosha Kabushiki Kaisha Load device control device and vehicle
JP2012228132A (en) * 2011-04-22 2012-11-15 Fuji Electric Co Ltd Power conversion apparatus
JP2016054603A (en) * 2014-09-03 2016-04-14 株式会社デンソー Motor-driven vehicle

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008081722A1 (en) * 2007-01-04 2008-07-10 Toyota Jidosha Kabushiki Kaisha Load device control device and vehicle
JP2008167616A (en) * 2007-01-04 2008-07-17 Toyota Motor Corp Controller for load device, and vehicle
JP4678374B2 (en) * 2007-01-04 2011-04-27 トヨタ自動車株式会社 LOAD DEVICE CONTROL DEVICE AND VEHICLE
US7952236B2 (en) 2007-01-04 2011-05-31 Toyota Jidosha Kabushiki Kaisha Control apparatus for load device, and vehicle
JP2012228132A (en) * 2011-04-22 2012-11-15 Fuji Electric Co Ltd Power conversion apparatus
JP2016054603A (en) * 2014-09-03 2016-04-14 株式会社デンソー Motor-driven vehicle

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