JP2007305723A - Semiconductor element with bump, its fabrication process, module employing the semiconductor element with bump - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element with bump in which good connection reliability is achieved between the semiconductor element with bump and a circuit board. <P>SOLUTION: The semiconductor element with bumps comprises a substrate 3, a semiconductor circuit provided on the substrate 3, an insulating film formed on the semiconductor circuit, a portion on the insulating film where the insulating film is not formed, and a conductor pad 6a formed in the portion where the insulating film is not formed and connected with the semiconductor circuit wherein the conductor pad 6a is connected with a transfer bump 8 formed by intaglio transcription. Since the clearance 25 can be enlarged between a circuit board 7 and a semiconductor element, thermal stress generated due to difference of linear expansion coefficient can be relaxed between the semiconductor element 1 with bump and the circuit board 7. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a bumped semiconductor element that is flip-chip mounted on a circuit board.

  A conventional bumped semiconductor element that is flip-chip mounted on a circuit board will be described below. A semiconductor circuit is formed on a wafer of a conventional semiconductor device with bumps. On the semiconductor circuit, a passivation film made of metal oxide is formed as an insulating film. Then, a passivation film non-forming portion is provided at a predetermined position of the passivation film.

  The passivation film non-formation portion is provided with an aluminum pad connected to the semiconductor circuit. The conductor bump is connected to the aluminum pad directly under the aluminum pad via a base plating, and is formed by gold plating.

  And such a conventional semiconductor device with bumps is mounted on a circuit board via an anisotropic conductive film (hereinafter referred to as ACF mounting), or directly pressed onto a circuit board using a non-conductive resin (hereinafter referred to as NCP implementation). The semiconductor element is electrically and mechanically connected to the circuit board by injecting resin into the gap between the circuit board and the semiconductor element and curing the resin.

As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
JP-A 63-76460

  However, in such a conventional semiconductor device with bumps, since the conductor bumps are formed by plating, the thickness is small, and the distance between the semiconductor element and the circuit substrate is small when mounted on the circuit substrate. For this reason, the stress at the connection portion that is generated due to the difference in the coefficient of linear expansion between the semiconductor element and the circuit board cannot be relieved, and this stress causes a crack or disconnection at the connection portion. Therefore, there is a problem that connection reliability is poor.

  Accordingly, the present invention has been made to solve this problem, and an object of the present invention is to provide a semiconductor element with a conductor bump having good connection reliability between the conductor bump and the circuit board.

  In order to achieve this object, the bumped semiconductor element of the present invention is formed on a base material, a semiconductor circuit provided on the base material, an insulating film formed on the semiconductor circuit, and the insulating film. An insulating film non-forming portion, and a conductor pad formed in the insulating film non-forming portion and connected to the semiconductor circuit, to which the transfer conductor bump formed by intaglio transfer is connected. It is a thing. As a result, the intended purpose can be achieved.

  As described above, according to the present invention, the base material, the semiconductor circuit provided on the base material, the insulating film formed on the semiconductor circuit, and the insulating film non-forming portion formed on the insulating film And a conductive pad connected to the semiconductor circuit and formed on the insulating film non-forming portion, and the conductive pad is a bumped semiconductor element to which a transfer conductive bump formed by intaglio transfer is connected. With this, since the transfer conductor bump is formed by intaglio transfer, the dimensional accuracy of the shape of the transfer conductor bump is good, and the interval between adjacent transfer conductor bumps can be reduced.

  Moreover, since the transfer conductor bump is formed by intaglio transfer, the height of the transfer conductor bump can be easily increased. Thereby, the clearance gap between the circuit board in which this semiconductor is mounted, and a semiconductor element can be enlarged. Therefore, since the thermal stress generated by the difference in linear expansion coefficient between the semiconductor element and the circuit board can be relaxed, the connection reliability can be increased.

  Furthermore, since the conductor bumps are formed by intaglio transfer, a plurality of conductor bumps can be formed at a time. Therefore, a semiconductor device with bumps with good productivity can be realized.

(Embodiment 1)
Hereinafter, the bumped semiconductor element 1 according to the present embodiment will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a module 2 using the bumped semiconductor element 1 according to the present embodiment, and FIG. 2 is an enlarged cross-sectional view of the main part of the module 2. First, the bumped semiconductor element 1 will be described with reference to FIGS. In the semiconductor device 1 with bumps in the present embodiment, a plurality of semiconductor circuits (not shown) are formed on a silicon base 3. These semiconductor circuits are connected by aluminum wiring. The aluminum wiring and the semiconductor circuit are covered with a metal oxide film (a so-called passivation film, not shown).

  Further, a resin insulating film 4 (shown in FIG. 2) is formed on the metal oxide film. Here, a metal oxide film non-formation part (not shown) is formed in the metal oxide film, and an insulating film non-formation part 5 is formed at the same position as the metal oxide film non-formation part. The insulating film 4 is a polyimide film, and the insulating film non-forming portion 5 has a larger opening than the non-forming portion of the metal oxide film. The insulating film non-forming portion 5 is provided with aluminum conductor pads 6a and 6b connected to the semiconductor circuit via aluminum wiring. As a result, part of the conductor pads 6 a and 6 b is exposed from the insulating film 4. The outer edges of the conductor pads 6a and 6b are covered with the insulating film 4. This is to prevent the semiconductor circuit adjacent to the conductor pads 6a and 6b from being exposed even if the position of the insulating film 4 with respect to the conductor pads 6a and 6b is shifted.

  The semiconductor device 1 with bumps in the present embodiment is connected to the circuit board 7 by NCP mounting. Transfer bumps 8 are provided to connect between the circuit board 7 and the conductor pads 6a and 6b. Specifically, the semiconductor circuit and the circuit board 7 are electrically connected by bringing the tip of the transfer bump 8 into contact with the connection land 9 of the circuit board 7. Here, the transfer bump 8 is also formed at a position immediately below the conductor pad 6a as shown in FIG. 1 or at a position different from the conductor pad 6b as shown in FIG. When the positions of the transfer bump 8 and the conductor pad 6 b are different, the transfer bump 8 is formed on the insulating film 4. The transfer bump 8 and the conductor pad 6b are connected by a connection conductor 10 formed on the insulating film 4. The transfer bump 8 and the connection conductor 10 are both formed by intaglio transfer described later.

  The aluminum on which the conductor pads 6a and 6b are formed is a metal that is difficult to join with other metals (for example, gold or solder). Therefore, a base metal layer (so-called under-barrier metal) is provided on the connection portion 11a between the conductor pads 6a, 6b and the transfer bump 8, or the connection portion 11b between the conductor pads 6a, 6b and the connection conductor 10. Yes.

  Next, details of the transfer bump 8 will be described. The transfer bump 8 has a pedestal portion 8a provided on the base 3 side and a small diameter portion 8b provided on the pedestal portion 8a. Both the base portion 8a and the small diameter portion 8b have a cylindrical shape. In the present embodiment, the height of the transfer bump 8 is 110 μm, the diameter of the pedestal portion 8a is about 150 μm, and the diameter of the small diameter portion 8b is about 100 μm. Such transfer bumps 8 are arranged at a pitch of about 200 μm on the semiconductor element. That is, the distance between the side surfaces of the adjacent pedestal portions 8a is only about 50 microns, and they are provided very close to each other. Therefore, in the present application, the transfer bump 8 is formed by intaglio transfer. In other words, the intaglio transfer can reduce blurring and the like, so that the accuracy of position and shape can be increased. Therefore, since the transfer bump 8 can be formed with high precision even for such a narrow pitch, the semiconductor element can be miniaturized. In addition, it is possible to reduce the number of places where rewiring or the like is required in the semiconductor element, and further reduce the size of the semiconductor element.

  Here, the diameter of each of the pedestal portion 8a and the small diameter portion 8b is gradually increased from the front end side of the transfer bump 8 toward the base material 3 side. That is, these side surfaces are provided with an inclination 12 extending in the direction from the front end side toward the base material 3 side. As a result, in intaglio transfer, the intaglio plate can be easily removed, so that the transfer bumps 8 are not easily damaged. Further, in the present embodiment, a flat portion 13 is provided at the tip of the small diameter portion 8b. As a result, the strength at the tip of the small-diameter portion 8b is increased, so that conductor loss at the tip is less likely to occur.

  In addition, although the front-end | tip of the small diameter part 8b was made into the flat part 13 in this Embodiment, you may provide roundness (what is called a fillet). In addition, although the transfer bump 8 in the present embodiment has a stepped shape having a pedestal portion 8a and a small diameter portion 8b, it may have a conical or cylindrical shape. In the case of a conical shape, since there is no step, it is difficult for the transfer bump 8 to be broken in the middle. In addition, since the strength of the transfer bump 8 can be further increased by using a cylindrical shape, defects and the like can be further reduced. Note that the width of the flat portion 13 in the present embodiment is about 50 micrometers.

  Next, the module 2 on which the bumped semiconductor element 1 is mounted will be described. In the module 2 in the present embodiment, in order to mount the bumped semiconductor element 1 on the circuit board 7 by NCP mounting, connection lands 9 are formed on the circuit board 7 at positions corresponding to the transfer bumps 8. These connection lands 9 are connected to the chip component 15 through the front side pattern 14. The front side pattern 14 is connected to the back side pattern 17 through the through hole 16, and is connected to the mounting terminal 18 through the back side pattern 17. The circuit board 7 in the present embodiment uses a six-layer glass epoxy multilayer resin substrate.

  Here, a solder resist film 19 is formed on each of the front side pattern 14 and the back side pattern 17. The solder resist film 19 on the front surface 20 is formed with a resist non-forming portion 21a and a resist non-forming portion 21b, and the solder resist film 19 on the back surface 22 is formed with a resist non-forming portion 21c. The resist non-formation portion 21a is provided with a component land 24 for mounting the chip component 15 via the cream solder 23, and the resist non-formation portion 21b is a connection land for mounting the semiconductor device 1 with bumps. 9 is provided. On the other hand, the resist non-forming portion 21c is provided with a mounting terminal 18 for mounting the module 2 on a parent substrate (not shown).

  In order to maintain electrical connection and mechanical connection strength between the semiconductor element 1 with bumps and the circuit board 7, a resin 26 is provided in the gap 25 between the semiconductor element 1 with bumps and the circuit board 7. The resin 26 in the present embodiment is a thermosetting resin. This is because the resin 26 does not remelt even when reflow heat or the like when the module 2 is mounted on a parent substrate (not shown) is applied, and thus the reliability is good. In this embodiment, the semiconductor element is connected to the wiring board by NCP. However, this may be a connection method using an anisotropic conductive film (so-called ACF).

  With the above configuration, the transfer bump 8 is formed by intaglio transfer, so that the dimensional accuracy of the shape is good. Thereby, the space | interval of adjacent transfer bump 8 can be made small. Therefore, the semiconductor element can be miniaturized and the small module 2 can be realized. Furthermore, since it is possible to form the transfer bump 8 at a position immediately below the conductor pads 6a and 6b of the semiconductor element, it is possible to reduce the number of the most wiring portions of the semiconductor element. Therefore, the price of the semiconductor element can be reduced.

  Further, since both the conductor pattern and the transfer bump 8 are formed by intaglio transfer, it is possible to form them together. Therefore, the productivity of bump formation on the semiconductor element is good, and the bumped semiconductor element 1 can be reduced in price.

  Furthermore, since intaglio transfer is used, the height of the transfer bumps 8 can be easily increased by increasing the depth of the recesses 51 described later. Thereby, the clearance gap 25 between the semiconductor element 1 with a bump and the base material 3 can be enlarged. Therefore, the injection property of the resin 26 into the gap 25 is good, and the workability is good. Further, by increasing the gap 25, thermal stress generated by the difference between the linear expansion coefficient of the base material 3 (silicon) and the circuit board 7 (glass epoxy) of the semiconductor element and the linear expansion coefficient of the base material 3 is also increased. It becomes easy to relax. Therefore, the connection reliability between the semiconductor element and the circuit board 7 can be increased.

  As described above, the transfer bumps 8 in the padded semiconductor element of the present embodiment are formed by intaglio transfer. Then, next, the manufacturing method (intaglio transfer) of this semiconductor device with a pad and the module 2 is demonstrated using drawing. FIG. 3 is a manufacturing flowchart of the padded semiconductor element according to the present embodiment, and FIG. 4 is an enlarged cross-sectional view of the main part of the recess 51. 3, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof is simplified.

  3 and 4, in the intaglio manufacturing process 31, a recess 51 having a shape corresponding to the shape of the transfer bump 8 and a groove having a shape corresponding to the shape of the connection conductor 10 are processed into a film 52 to manufacture an intaglio. In the conductor filling step 32, the conductor paste 33 is filled in the intaglio plate manufactured in the intaglio manufacturing step 31 with the conductor paste 33 and then the solvent is evaporated to harden the conductor paste 33 in advance. Note that polyimide is used as the material of the film 52 in the present embodiment, and the film 51 is irradiated with an excimer laser to process the recesses 51 and the grooves. And these recessed parts 51 are provided with the inclination 53 of the direction where a width | variety, a diameter, etc. become wide toward the opening side.

  On the other hand, a plurality of semiconductor circuits and aluminum wirings are previously formed on the silicon wafer 34, and a metal oxide film is formed thereon. In the insulating film forming step 35, the insulating film 4 is formed on the metal oxide film of the silicon wafer 34. The insulating film 4 is formed by uniformly applying a liquid resin paste onto the silicon wafer 34 with a coater or the like. Then, the insulating film non-formation part 5 is formed by hardening the insulating film 4 only in a required location with ultraviolet rays or heat. In the adhesive application process 36, a thermoplastic adhesive is printed on the insulating film 4 thus formed by screen printing or the like.

  Next, in the transfer step 37, the silicon wafer 34 on which the adhesive is printed and the intaglio plate filled with the conductive paste 33 are bonded together in the direction in which the recess 51 faces the substrate 3. In the curing step 38, in this state, pressure and heat are applied by a hot press or the like to cure the adhesive, and the conductor paste 33 and the silicon wafer 34 are securely bonded. When the intaglio is peeled from the silicon wafer 34 in this state, the shape of the recess 51 and the groove is reproduced on the silicon wafer 34 almost faithfully, and the transfer bump 8 and the connection conductor 10 are completed (in this application, this is the case). The formation of the transfer bumps 8 is called intaglio transfer).

  An important point at this time is the leakage property of the conductor paste 33 with respect to the recess 51. If this looseness is poor, the conductor paste 33 remains in the recess 51 when the intaglio is peeled from the silicon wafer 34, and the transfer bump 8 on the silicon wafer 34 is damaged. Therefore, in this embodiment, the recess 51 is provided with an inclination 53. In the present embodiment, the leakage property is improved by setting the inclination 53 to 6 degrees. Thereby, the inclination 12 of the direction which spreads toward the base material 3 side from the front-end | tip is formed in the side surface of the transfer bump 8. FIG.

  Then, after this curing step 38, a dicing step 39 is performed. In the dicing process 39, the semiconductor device 1 with bumps is completed by cutting the silicon wafer 34 using diamond teeth or the like.

  Next, a method of manufacturing the module 2 using the bumped semiconductor element 1 will be described with reference to the drawings. FIG. 5 is a manufacturing flowchart of the module 2 in the present embodiment, and FIG. 6 is an enlarged cross-sectional view of the main part of the module 2 in the resin injection step 65.

  In FIG. 5, in the connection member application step 61, the cream solder 23 is printed on the component land 24 of the circuit board 7, and in the chip component mounting step 62, the chip component 15 is mounted on the surface 20 side of the circuit board 7. Then, after the chip component 15 is mounted, the circuit board 7 is heated in the reflow process 63, so that the chip component 15 is accurately connected to a predetermined position of the circuit board 7. This is due to the self-alignment effect generated by the surface tension of the melted cream solder 23.

  On the other hand, in the semiconductor mounting process 64, the bumped semiconductor element 1 is mounted on the connection land 9. At this time, since the diameter of the small diameter portion 8b of the transfer bump 8 is smaller than that of the connection land 9, even when the semiconductor element 1 with bumps is mounted with a deviation from the center of the connection land 9, the transfer bump 8 is transferred. The bump 8 is surely brought into contact with the connection land 9. In the present embodiment, since the diameter of the connection land 9 is 125 μm and the diameter of the small diameter portion 8b is 100 μm, poor connection or the like is unlikely to occur even when a displacement of about 12.5 μm occurs during mounting.

  FIG. 6 is a cross-sectional view of the module 2 in the resin injection process 65. In the resin injection step 65, as shown in FIG. 6, the thermosetting resin 26 is injected into the gap 25 between the semiconductor element and the bumped semiconductor element 1, and heated at a temperature of about 200 ° C. Is cured. As a result, the transfer bump 8 and the connection land 9 are completely electrically and mechanically connected. At this time, it is desirable that the cream solder 23 between the chip component 15 and the circuit board 7 is not melted. Therefore, in the present embodiment, a high melting point solder having a melting point of 230 ° C. is used for the cream solder 23.

  As described above, since the transfer bumps 8 are formed using intaglio transfer, the height of the transfer bumps 8 can be increased compared to screen printing or the like. As a result, the gap 25 between the bumped semiconductor element 1 and the circuit board 7 can be increased. Therefore, since it becomes easy to relieve the thermal stress due to the difference in linear expansion coefficient between the circuit board 7 and the base material 3, a highly reliable connection is possible.

  In addition, bleeding such as a screen can be reduced, and an interval between adjacent transfer bumps 8 can be reduced. Accordingly, since a small semiconductor element can be used, a small module 2 can be realized.

(Embodiment 2)
The second embodiment will be described below with reference to the drawings. FIG. 7 is an enlarged cross-sectional view of a main part of a module 72 using the semiconductor element 71 with bumps in the present embodiment. 7, the same components as those in FIG. 1 and FIG. 2 are denoted by the same reference numerals, and the description thereof is simplified.

  In FIG. 7, the difference between the present embodiment and the first embodiment is the difference in the mounting method on the circuit board 7. That is, in the first embodiment, the semiconductor device 71 with bumps is mounted on the circuit board 7 via the solder bumps 73, although mounted by NCP or ACF. Therefore, in the present embodiment, a depression 75 is formed on the top surface of the transfer bump 74 from the periphery toward the center. Then, solder bumps 73 are mounted in the depressions 75, and the solder bumps 73 are melted, whereby the bumped semiconductor element 71 and the circuit board 7 are connected. The bumped semiconductor element 71 in the present embodiment can be manufactured using the same process as the bumped semiconductor element 1 in the first embodiment. That is, in the intaglio manufacturing process 31, the recess 51 having the shape of the depression 75 may be formed in the film.

  Next, the manufacturing method of the module 72 is demonstrated using drawing. FIG. 8 is a manufacturing flowchart of the module 72. In FIG. 8, the same steps as those in FIG. 5 are denoted by the same reference numerals and the description thereof is simplified. In the bumped semiconductor element 71 of the present embodiment, in the connection member application step 81, not only the cream solder 23 is supplied to the component land 24 but also the flux 82 is applied to the connection land 9. In this embodiment, the reflow process 63 is performed between the semiconductor mounting process 64 and the resin injection process 65.

  As described above, the connection between the semiconductor element 71 with bumps and the circuit board 7 can be performed simultaneously with the reflow process 63 for connecting the chip component 15 and the circuit board 7, so that the module 2 with high productivity and low cost is realized. it can.

  Further, since the solder bumps 73 are interposed between the semiconductor element 71 with bumps and the circuit board 7, variations in the height of the transfer bumps 74 can be absorbed. Furthermore, since the depression 75 is provided on the top surface of the transfer bump 74, the solder bump 73 can be mounted with high accuracy. Therefore, a short circuit between adjacent connection lands 9 hardly occurs.

(Embodiment 3)
Embodiment 3 will be described below with reference to the drawings. FIG. 9 is an enlarged cross-sectional view of the main part of the module 92 using the semiconductor element 91 with bumps in the present embodiment. 9, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof is simplified.

  In FIG. 9, there is a difference between the structure of the transfer bump 93 and the manufacturing method thereof between the present embodiment and the first embodiment. That is, the transfer bump 93 in the present embodiment has a transfer protrusion resin body 94 formed by intaglio transfer at the center, and the surface layer of the transfer protrusion resin body 94 is covered with the metal film 95. Yes.

  Now, a method of manufacturing the bumped semiconductor element 91 in the present embodiment will be described with reference to the drawings. FIG. 10 is a manufacturing flowchart of the bumped semiconductor element 91 in the present embodiment. 10, the same steps as those in FIG. 3 are denoted by the same reference numerals, and the description thereof is simplified.

  In the intaglio manufacturing process 101 of the present embodiment, only the recess 51 corresponding to the transfer protrusion resin body 94 is processed into the film 52. In the resin filling step 102, the resin paste 103 is used instead of the conductor paste 33 of the first embodiment, and the resin paste 103 is filled into the recess 51 processed in the intaglio plate manufacturing step 101. In the transfer step 104, the transfer protrusion resin body 94 is formed by transferring the resin paste 103 filled in the recess 51 onto the insulating film 4 in the silicon wafer 34. The resin paste uses a thermosetting resin. As a result, when the module 2 on which the bumped semiconductor element 91 is mounted is mounted on the parent substrate, the transfer protrusion resin body 94 does not melt, so that mounting with high connection reliability can be realized.

  In the metal film forming step 105, a metal film 95 is formed on the transfer protrusion resin body 94 and the silicon wafer 34 thus formed. Specifically, by forming a metal plating film on the silicon wafer 34 (insulating film 4) or on the surface of the transfer projection resin body 94 by electroless plating 106, and leaving only necessary portions by photolithography 107 or the like, A metal film 95 is formed. As described above, since the connection conductor 10 and the metal film 95 can be simultaneously formed by plating or the like, the productivity of the bumped semiconductor element 91 is good, and the low-cost bumped semiconductor element 91 can be realized. .

  Furthermore, since the center of the transfer bump 93 is a resin, it is possible to relieve stress on the connection portion that is generated due to the difference in thermal expansion coefficient between the base material 3 (silicon) and the circuit board 7 (glass epoxy). Therefore, the bumped semiconductor element 91 can be mounted with high reliability.

  It is desirable that the thermal expansion coefficient of the transfer protrusion resin body 94 be equal to or greater than the thermal expansion coefficient of the resin 26. As a result, even if the temperature of the module 2 changes, good contact reliability can be maintained between the transfer protrusion conductor 93 and the connection land 9. In the present embodiment, the thermal expansion coefficient of the transfer protrusion resin body 94 is approximately the same as the thermal expansion coefficient of the resin 26. Therefore, the amount of expansion and contraction between the transfer protrusion conductor 93 and the resin 26 is almost the same with respect to the temperature change, so that even better contact reliability can be secured even if the temperature of the module 2 changes.

  Further, although the transfer bump 93 in this embodiment is formed at a position different from the conductor pad 6b, it may be provided immediately below the conductor pad 6a.

(Embodiment 4)
Hereinafter, the present embodiment will be described with reference to the drawings. In the present embodiment, the metal film 95 is obtained by another method with respect to the metal film processing step 105 in the third embodiment. FIG. 11 is a manufacturing flowchart of the metal film processing step in the fourth embodiment, and FIG. 12 is an enlarged cross-sectional view of the main part of the transfer protrusion resin body in each step of the metal film processing step. 12A to 12E are an electroless copper plating process 111, a plating resist forming process 112, an electrolytic plating process 114, a plating resist peeling process 115, and an etching process 116, respectively.

  11 and 12, the same components as those in FIGS. 1 to 10 are denoted by the same reference numerals, and the description thereof is simplified. Now, the metal film processing step 105 in the present embodiment will be described in the order of the steps shown in FIG.

  11 and 12, in the electroless copper plating step 111, a copper plating film 121 is formed electrolessly on the entire surface of the substrate 3 on which the transfer protrusion resin body 94 is formed in the resin transfer step 34. The copper plating film 121 is used as an electrode for performing electrolytic plating later. Since the copper plating 121 is only used as an electrode, it may be a very thin plating of 1 μm or less.

  After the electroless copper plating step 111, a plating resist forming step 112 is performed. In this plating resist forming step 112, a plating resist 113 is applied to both surfaces of the base material 3. At this time, the transfer protrusion resin 21 serves as a plating resist non-forming portion 122. In this embodiment, a liquid resist is applied to the base material 3 and the plating resist 113 at a location corresponding to the transfer protrusion resin 21 is removed by a photolithography process, thereby obtaining the non-formed portion 122.

  After the plating resist forming step 112, an electrolytic plating step 114 is performed. This electrolytic plating step 114 is a step of forming a copper plating layer 123 on the plating resist non-forming portion 122 by electrolytic plating. In the present embodiment, the thickness of the copper plating layer 123 is approximately 10 μm.

  After the electrolytic plating step 114, a plating resist peeling step 115 is performed. In this plating resist peeling step 115, the plating resist 113 is removed to expose the electroless plating layer. Then, after the plating resist peeling step 115, an etching step 116 is performed, and unnecessary portions of the copper plating 121a are removed. Through the steps as described above, a metal film 95 made of the copper plating film 121b and the copper plating layer 123 is formed on the surface of the transfer protrusion resin body 94. Simultaneously with the formation of the metal film 95, the connection conductor 10 that connects the metal film 95 and the conductor pads 6a and 6b is also formed, and the connection between the metal film 22 and the front-side conductor pattern 5 is also completed.

  Then, after the etching process 116, a polishing process 117 is performed. In this polishing step 117, in order to match the height of the transfer bump 93, the tip portion is polished and the height is made uniform. In this embodiment, the polishing is performed until the thickness of the copper plating layer becomes about 6 μm in this polishing step. Thus, since the height accuracy of the transfer bump 93 is increased by the polishing step 117, the connection land 9 and the transfer bump 93 can be brought into contact with each other reliably, and high reliability can be realized.

  The semiconductor device with bumps according to the present invention has an effect that the reliability of the connection portion can be increased with respect to temperature change, and is particularly useful when used as a semiconductor device with bumps that are flip-chip mounted.

Sectional drawing of the semiconductor element with a conductor bump in Embodiment 1 of this invention Same as above, enlarged sectional view of the main part Same as above, manufacturing flowchart of semiconductor device with bumps Same as above, enlarged sectional view of intaglio Same as above, module manufacturing flowchart Same as above, sectional view of module in resin injection process The principal part expanded sectional view of the module in Embodiment 2 of this invention Same as above, module manufacturing flowchart Module main part enlarged sectional view in Embodiment 3 of the present invention Same manufacturing flow chart of semiconductor element with conductor bump Manufacturing flowchart of metal forming step in Embodiment 4 of the present invention (A) The principal part expanded sectional view of the transfer protrusion resin in the electroless copper plating process, (b) The principal part enlarged sectional view of the transfer protrusion resin in the plating resist forming process, (c) The electrolytic plating The main part expanded sectional view of the transfer protrusion resin in the process, (d) The same main part enlarged sectional view of the transfer protrusion resin in the plating resist peeling process, (e) The same main part enlarged view of the transfer protrusion resin in the etching process Cross section

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor element with bump 3 Base material 4 Insulating film 5 Insulating film non-formation part 6a, 6b Conductor pad 8 Transfer bump

Claims (15)

A base material, a semiconductor circuit provided on the base material, an insulating film formed on the semiconductor circuit, an insulating film non-forming portion formed on the insulating film, and an insulating film non-forming portion And a conductive pad connected to the semiconductor circuit, and a bumped semiconductor element to which a transfer bump formed by intaglio transfer is connected. A base material, a semiconductor circuit provided on the base material, an insulating film formed on the semiconductor circuit, an insulating film non-forming portion formed on the insulating film, and an insulating film non-forming portion A transfer pad connected to the conductor pad, the transfer bump including a transfer protrusion resin body formed by intaglio transfer, and the transfer protrusion resin. A bumped semiconductor element comprising a metal film formed on the surface of a body. The semiconductor element with a bump according to claim 1 or 2, wherein a tip of the transfer bump is narrower than a base material side. The semiconductor element with a bump according to claim 1, wherein a side surface of the transfer bump is inclined in a direction of spreading downward. The semiconductor element with a bump according to claim 1, wherein a fillet is provided at a tip of the transfer bump. The semiconductor element with a bump according to claim 1, wherein a tip of the transfer bump is flat. The semiconductor element with a bump according to claim 1 or 2, wherein a depression is provided on the top surface of the transfer bump from the peripheral edge toward the center. The semiconductor element with a bump according to claim 7, wherein a solder bump is mounted in the recess. 2. The semiconductor device with bumps according to claim 1, wherein the conductor pad and the transfer bump are formed at different positions and have a connection conductor connecting the conductor pad and the transfer bump. 3. The semiconductor element with bumps according to claim 9, wherein the conductor pattern is a transfer conductor obtained by transferring a conductor paste by intaglio transfer. A module comprising the semiconductor element with bumps according to claim 1, a wiring board on which the semiconductor element with bumps is mounted, and a resin injected between the wiring board and the semiconductor element with bumps. 2. The method for manufacturing a semiconductor device with bumps according to claim 1, wherein a concave portion is processed into a film, and then the conductive paste is filled in the concave portion, and then the concave portion is filled on the semiconductor element. The manufacturing method of the semiconductor element with a bump which forms a transfer conductor bump by transcribe | transferring and transferring it after that. 13. The bumped semiconductor element according to claim 12, wherein a conductor pattern connecting between the conductor pad and the transfer bump is formed by intaglio transfer, and the conductor pattern and the transfer bump are collectively transferred to the semiconductor element. Production method. 3. The method for manufacturing a semiconductor device with bumps according to claim 2, wherein a recess is processed into a film, and then the resin paste is filled into the recess, and then the resin paste is filled into the recess on the semiconductor element. A method of manufacturing a semiconductor device with bumps, in which a transfer protrusion resin body is formed by transferring the film and then heated to form a metal film on the surface of the transfer protrusion resin body. A method of manufacturing a semiconductor device with bumps, wherein a conductor pad and a transfer bump of a semiconductor element are formed at different positions, and a connection conductor and a metal film connecting the conductor pad and the transfer bump are formed simultaneously.

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