JP2007297714A - 抵抗性半導体ウェハ上に薄膜を電気化学処理するための装置及び方法 - Google Patents
抵抗性半導体ウェハ上に薄膜を電気化学処理するための装置及び方法 Download PDFInfo
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Abstract
【解決手段】 125mm又はそれより大きい半導体ウェハであって、少なくとも一部が電解質溶液と接触し、第1電極として機能する半導体ウェハを、導電性表面と電気接触する状態で準備するステップと、電解質溶液の中に第2電極を準備するステップであって、第1及び第2電極が電源装置の両端に接続されるステップと、電流が第1及び第2電極にわたって印加されるときに、光源を用いて半導体ウェハの表面を照射するステップと、を含む電気化学プロセスである。本発明はまた、光源と電気化学プロセスを実施する電気化学構成要素とを含む装置も対象とする。
【選択図】 図5
Description
1g/リットルから300g/リットルのCuSO4、1ml/リットルから250ml/リットルのH2SO4、及び、1から10000ppmのCl−から成るめっき溶液を使用することができる。例えば、めっき溶液は、pH1から2を有する、240g/リットルのCuSO4と100g/リットルのH2SO4を含むことができる。Cl−の原料は塩化ナトリウムである。さらに、臭化物、ヨウ化物、フッ化物、硫化物、硫酸塩、ホウ酸、ホウ酸塩及び金属塩のような他の無機成分、ならびに、界面活性剤、光沢剤、促進剤、抑制剤及びならし剤(レベラー)のような有機添加剤を加えることができる。
1g/リットルから100g/リットルのNH4ReO4と、1ml/リットルから250ml/リットルのHCl(38wt.%)から成るめっき溶液を使用することができる。例えば、めっき溶液は、10g/リットルのNH4ReO4と、1から2のpHを有する、10ml/リットルのHCl(38wt.%)を含むことができる。NH4ReO4に加えて、他の過レニウム塩(perrhenate salt)と無機Re塩を使用することができる。HClに加えて、他の塩化物を使用することができる。さらに、他の無機成分(臭化物、ヨウ化物、フッ化物、硫化物、硫酸塩、ホウ酸、ホウ酸塩及び金属塩)と、有機添加剤(界面活性剤)を加えることができる。
102:ツール・ヘッド
103:リング・シール
104:金属プレート
105:対向電極
106:シャッタ
107:光源
108:電源
109:電源
111:半導体ウェハ
Claims (20)
- 電気化学プロセスであって、
125mm又はそれより大きい半導体ウェハであって、少なくとも一部が電解質溶液と接触し、第1電極として機能する半導体ウェハを、導電性表面と電気接触する状態で準備するステップと、
前記電解質溶液の中に第2電極を準備するステップであって、前記第1及び第2電極が電源装置の両端に接続されるステップと、
電流が前記第1及び前記第2電極にわたって印加されるときに、光源を用いて前記半導体ウェハの表面を照射するステップと、
を含む、電気化学プロセス。 - 前記半導体ウェハが、Si半導体ウェハ、Ge半導体ウェハ、又は(Si−Ge)半導体ウェハから選択されたドープ又は非ドープの半導体ウェハであるか、又は、Ga、As、P、Sb、In、Se、及びAlを含むドープ又は非ドープの二種、三種及び四種の半導体を含む半導体ウェハである、請求項1に記載のプロセス。
- 前記半導体ウェハが、Cd、Zn、Te、Se、及びSを含むドープ又は非ドープのII−IV族半導体ウェハ、Ti又はZr酸化物を含むドープ又は非ドープの酸化物半導体ウェハ、Cuベース又はSrベースの半導体ウェハ、又は、シリコン・オン・インシュレータ又はシリコンゲルマニウム・オン・インシュレータの組合せから選択された半導体・オン・インシュレータ半導体ウェハである、請求項1に記載のプロセス。
- 前記半導体ウェハが、ポリアセチレン、ポリ(ジアルコキシp−フェニレン−ビニレン、ポリ(ジアルキルフルオレン)及びそれらの各々の誘導体から選択されたエレクトロルミネセント・ポリマーを含む、請求項1に記載のプロセス。
- 前記電気化学プロセスが、Ru、Re、Ni、Pd、Co、Pt、Rh、Cr、Mn、Cu、Fe、Zn、Cd、Ce、Ta、Hf、Ti、Al、V、Ga、Ge、As、Se、Nb、Mo、Ag、In、Sn、Sb、Te、W、Os、Ir、Au、Hg、Tl、Pb、Bi、P、B、C、N、O、Cl、又はそれらのいずれかの組合せからなる群から選択された1つ又はそれ以上の元素が前記半導体ウェハ上に堆積される、電着プロセスである、請求項1に記載のプロセス。
- 前記印加される電流が、1μA/cm2から50A/cm2であり、定電流、定電圧、又はパルス・モードで作動される、請求項5に記載のプロセス。
- 前記電気化学プロセスが電着プロセスであり、前記半導体ウェハが、Si半導体ウェハ、Ge半導体ウェハ又は(Si−Ge)半導体ウェハから選択されるドープ又は非ドープの半導体ウェハであるか、又は、Ga、As、P、Sb、In、Al、Se、Cd、Zn、Te、Se及びSからなるドープ又は非ドープの二種、三種、及び四種半導体ウェハである、請求項1に記載のプロセス。
- 前記電気化学プロセスが電気エッチング又は陽極酸化処理プロセスであり、前記半導体ウェハが、Al、Ti、Zr、Nb、Hf、Ta、W、Mo、及びCdから選択された1つ又はそれ以上の金属を含み、又は、前記半導体ウェハが、Si、Ge、In、Ga、Sb、P及びそれらのいずれかの組合せからなる半導体ウェハである、請求項1に記載のプロセス。
- 前記電流が、定電流、定電位、パルス電流又はパルス電位として印加される、請求項8に記載のプロセス。
- 前記電気化学プロセスが電着プロセスであり、主に結晶金属膜をもたらすように、電着された金属又は金属合金をアニーリングするステップをさらに含む、請求項1に記載のプロセス。
- 前記電着及びアニールされた金属膜が本質的にルテニウムからなり、前記ルテニウムの膜は、結晶配向101の反射強度が100又は002の反射強度よりも大きいXRDスペクトルを有する、請求項10に記載のプロセス。
- 前記電着及びアニールされた金属膜が本質的にレニウムからなり、前記レニウムの膜は、結晶配向002の反射強度が101又は100の反射強度よりも大きいXRDスペクトルを有する、請求項10に記載のプロセス。
- 前記電気化学プロセスが電着プロセスであり、前記半導体ウェハが、n型シリコン領域とp型シリコン領域を含み、前記p型シリコン領域上の金属の選択的電着が前記半導体ウェハの照射の間に起こる、請求項1に記載のプロセス。
- 前記電気化学プロセスが電着プロセスであり、前記半導体ウェハが誘電体を備えたp型シリコンを含む、請求項1に記載のプロセス。
- 前記電解質溶液が、Ru、Re、Ni、Pd、Co、Pt、Rh、Cr、Mn、Cu、Fe、Zn、Cd、Ce、Ta、Hf、Ti、Al、V、Ga、Ge、As、Se、Nb、Mo、Ag、In、Sn、Sb、Te、W、Os、Ir、Au、Hg、Tl、Pb、Bi、P、B、C、N、O、Cl又はそれらのいずれかの組合せからなる群から選択された1つ又はそれ以上のイオンを含む、請求項14に記載のプロセス。
- 125mm又はそれよりも大きい、任意の絶縁体層を備えたp型半導体ウェハのカソード電着プロセスであって、
125mm又はそれよりも大きいp型半導体ウェハを電解質溶液の中に設置するステップと、
前記電解質溶液の中に対向電極を設置するステップと、
光源を用いて、前記p型半導体ウェハ又は存在すれば前記絶縁体層の前側を照射し、又は、前記半導体ウェハの裏側を照射するステップと、
前記半導体ウェハ及び前記対向電極に電流を印加するステップと、
を含むプロセス。 - 1μA/cm2から50A/cm2の電流を印加することにより、Ru、Re、Ni、Pd、Co、Pt、Rh、Cr、Mn、Cu、Fe、Zn、Cd、Ce、Ta、Hf、Ti、Al、V、Ga、Ge、As、Se、Nb、Mo、Ag、In、Sn、Sb、Te、W、Os、Ir、Au、Hg、Tl、Pb、Bi、P、B、C、N、O、Cl又はそれらのいずれかの組合せからなる群から選択された1つ又はそれ以上の元素を、前記半導体ウェハ上に堆積させるステップをさらに含み、前記電流が、定電流、定電圧又はパルス・モードで印加される、請求項16に記載のプロセス。
- 125mm又はそれよりも大きい、金属層を備えたn型半導体ウェハのアノード電気化学プロセスであって、
125mm又はそれよりも大きいn型半導体ウェハを電解質溶液の中に設置するステップと、
前記電解質溶液の中に対向電極を設置するステップと、
光源を用いて前記n型半導体ウェハの前側又は裏側を照射するステップと、
前記半導体ウェハ及び前記対向電極に電流を印加するステップと、
を含むプロセス。 - 前記アノード電気化学プロセスが、前記半導体ウェハ上に配置された前記金属層の電気エッチング・プロセスであるか又は前記金属層の陽極酸化プロセスである、請求項18に記載のプロセス。
- 電解質溶液を収容するためのタンクと、
半導体ウェハの表面に接触し、電源に電気接触する導電性表面と、
前記半導体ウェハの反対側の面に向けられた光源と、
前記電源と電気接触し、前記電解質溶液に接触することができるように前記タンク内に設置された、電極と、
を含む装置。
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JP2012522126A (ja) * | 2009-03-27 | 2012-09-20 | アルシメール | 半導体基板の表面において電気化学反応を実施するためのデバイスおよび方法 |
JP2011225991A (ja) * | 2010-04-19 | 2011-11-10 | Internatl Business Mach Corp <Ibm> | 半導体に直接電着する方法 |
JP2012126999A (ja) * | 2010-12-13 | 2012-07-05 | Rohm & Haas Electronic Materials Llc | 半導体の電気化学エッチング |
JP2021103706A (ja) * | 2019-12-24 | 2021-07-15 | 株式会社デンソー | 光電気化学エッチング装置 |
JP7279629B2 (ja) | 2019-12-24 | 2023-05-23 | 株式会社デンソー | 光電気化学エッチング装置 |
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US20120318673A1 (en) | 2012-12-20 |
JP5102534B2 (ja) | 2012-12-19 |
KR20070108087A (ko) | 2007-11-08 |
CN101070602A (zh) | 2007-11-14 |
US20120322243A1 (en) | 2012-12-20 |
US20090057154A1 (en) | 2009-03-05 |
US8303791B2 (en) | 2012-11-06 |
CN101070602B (zh) | 2010-05-26 |
US20070256937A1 (en) | 2007-11-08 |
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