JP2007287927A - Ic component mounting method, die bonding apparatus, and electronic component - Google Patents

Ic component mounting method, die bonding apparatus, and electronic component Download PDF

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JP2007287927A
JP2007287927A JP2006113570A JP2006113570A JP2007287927A JP 2007287927 A JP2007287927 A JP 2007287927A JP 2006113570 A JP2006113570 A JP 2006113570A JP 2006113570 A JP2006113570 A JP 2006113570A JP 2007287927 A JP2007287927 A JP 2007287927A
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substrate
ic component
electrode
plasma
gas
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JP4702157B2 (en
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Kazuhiro Inoue
Toshio Nishi
Hiroyuki Tsuji
和弘 井上
壽雄 西
裕之 辻
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Matsushita Electric Ind Co Ltd
松下電器産業株式会社
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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Abstract

<P>PROBLEM TO BE SOLVED: To prevent a composition solution of an adhesive for bonding of an IC component from exuding onto an electrode and prevent a wire connection failure between the IC component and the substrate electrode, by restricting the exudation of the composition solution to the interior of a predetermined space between an IC component mount region and the electrode in the periphery thereof. <P>SOLUTION: In an IC component mounting method of mounting and bonding an IC component 3 on a substrate 2 and then connecting an electrode of the IC component 3 and an electrode 5 of the substrate 2 by a wire 7, a region 4a between an IC component mount region 4 of the substrate 2 and the electrode 5 of the substrate is plasma processed to modify its surface or to form a film prior to the connection by the wire 7 and to form a liquid repellent surface 9 to a composition solution 8 of an adhesive 6 for bonding of the IC component 3 to provide a liquid repellent property. Similar effects can be expected even when a lyophilic property is provided in place of the liquid repellent property. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention provides an IC component mounting method for connecting an IC component electrode and a substrate electrode with a wire after mounting the IC component on a substrate and bonding the same, a die bonding apparatus used therefor, and mounting the IC component on the substrate. It is related with the electronic component.

  Conventionally, as an electronic component in which an IC component such as a bare IC chip is mounted on a substrate, an adhesive is applied to the IC component mounting region of the substrate, the IC component is mounted and bonded, and then the electrode of the IC component and the substrate An electrode manufactured by a process of connecting electrodes by a wire bonding method, then applying a sealing resin, and curing the sealing resin is known.

  In this type of electronic component, after an adhesive is applied to the substrate, part of the adhesive composition liquid oozes out from the IC component mounting area to the surroundings (generally referred to as bleed out), and the IC There is a problem that the wire bonding in the subsequent process is hindered by adhering to the electrode through the insulating space provided between the component mounting region and the substrate electrode. In particular, when the adhesive is a conductive adhesive made of fine silver powder and an epoxy resin, there is a problem that silver that oozes with the resin may cause a short circuit failure. In the case of an insulating adhesive made of a resin or the like, there is a problem that the connection failure of the wire connection portion may occur due to the resin or alumina. In particular, when the substrate is a glass epoxy resin substrate and the adhesive is based on an epoxy resin, the epoxy resin is oily and the surface of the glass epoxy resin substrate is oleophilic. Therefore, there is a problem that the above-mentioned harmful effects are likely to occur. In addition, when the substrate is a ceramic substrate, the composition solution may reach the electrode by capillary force, and there is a similar problem.

  In order to solve this problem, as shown in FIG. 15, an adhesive on the substrate 80 is applied to a substrate in which an insulating space in which no electrode is provided is provided around a land to which an IC component is bonded with an adhesive. An insulating partition wall 85 surrounding an adhesive 84 is projected on an insulating space 83 between a land 81 on which a component is mounted and an electrode 82 around the land 81 (see, for example, Patent Document 1). ).

  Further, a groove 94 is provided between a region where the IC component 91 is bonded by the adhesive 92 on the printed circuit board 90 and the electrode 93 disposed around the area, and the adhesive 92 is moved to the electrode 93 side by the groove 94. A device that prevents bleeding out is also known (see, for example, Patent Document 2).

  In addition, as a plasma cleaning device that cleans the substrate surface prior to wire bonding after chip components are mounted and bonded to the substrate, the vacuum processing space that houses the substrate is configured with a case that can be opened and closed, and the chip In a state in which a part is covered and protected, a vacuum processing space is closed to generate plasma, and a circuit pattern on the substrate surface is etched and cleaned (see, for example, Patent Document 3). ).

Also, in the cleaning of the substrate to remove the compound layer that hinders bonding of wire bonding, the damage of the chip mounted on the substrate was avoided with the insulator mask or the conductor mask arranged close to the discharge generation limit distance or less. In the state, it is known that the surface of the substrate is plasma-cleaned (see, for example, Patent Document 4).
JP-A-5-21638 JP-A-63-181437 JP-A-8-115936 JP-A-8-162438

  However, in the configurations disclosed in Patent Document 1 and Patent Document 2, it is possible to prevent the adhesive from bleeding out by the partition walls and the grooves, thereby preventing the occurrence of poor bonding. Therefore, there is a problem that a work process for forming the uneven portion is required, and the work process and the apparatus are complicated. In addition, the region provided with the concavo-convex portion cannot be used effectively, and if the concavo-convex portion is too small, the effect cannot be obtained with certainty. In Patent Document 1, the partition wall is formed by applying a resin. However, it is necessary to widen the application area in consideration of bleeding due to resin application. For this reason, there is a problem that a large area that cannot be effectively used is generated, which becomes a serious obstacle to the recent increase in packaging density.

  In addition, as described in Patent Document 3, the method of plasma-cleaning the surface of a substrate in a state where a chip component mounted and bonded on the substrate is covered with a cover and protected is also high in the mounting density. When the space between the chip part and the electrode is narrow due to the conversion, the oozing of the resin component of the adhesive occurs in the narrow space between the chip part and the electrode, while the cover is used to protect the chip part from charged particles. Since the body needs to be largely covered without contacting the chip component, there is a problem that it is difficult to clean the resin that has been covered and covered with the cover body even if the narrow space between the chip component and the electrode is covered. .

  Also, as described in Patent Document 4, the method of plasma cleaning the surface of the substrate while protecting the chip component with a mask also allows a narrow space between the chip component and the electrode without damaging the chip component. There is a problem that it is difficult to manufacture a mask that can remove the resin component of the adhesive that has oozed out.

  In view of the above-described conventional problems, the present invention restricts the exudation of a composition liquid of an adhesive for adhering an IC component to a predetermined space between the IC component mounting area and the surrounding electrode and onto the electrode. IC component mounting method, die bonding apparatus used therefor, and electronic component produced by the mounting method can be provided to reliably prevent the composition liquid from exuding and to prevent the occurrence of wire connection failure between the IC component and the substrate electrode The purpose is to do.

  An IC component mounting method according to the present invention is an IC component mounting method in which an IC component electrode and a substrate electrode are connected by a wire after the IC component is mounted on and bonded to the substrate. The region between the IC component mounting region and the electrode is subjected to plasma treatment so as to have liquid repellency or lyophilicity with respect to the composition liquid of the adhesive that adheres the IC component. The present invention does not exclude performing the same plasma treatment on a region other than the region between the IC component mounting region and the electrode.

  According to this configuration, at least a region between the IC component mounting region and the electrode is subjected to plasma treatment so as to have liquid repellency with respect to the adhesive composition liquid. It can be confined inside to prevent exudation to the electrode side, or by making the adhesive composition liquid lyophilic, the adhesive composition liquid can be confined in this region, and the outer area can exude. Thus, it is possible to prevent the occurrence of poor bonding with the electrode during wire connection. In addition, since it is made liquid-repellent or lyophilic by plasma treatment, the effects are less likely to be lost due to the effects of various operations thereafter, so that the treatment is performed before applying an adhesive or mounting an IC component. Therefore, it is possible to perform processing in a state where there is no risk of damage to the arrangement components such as IC parts on the substrate without using complicated protective means at the time of plasma processing, and the plasma processing is efficiently performed with a simple apparatus. Thus, it is possible to prevent the occurrence of defective bonding of the wires. If plasma processing can be performed without fear of damaging the IC component, the processing may be performed after mounting the IC component.

  In addition, when the plasma treatment is performed by spraying atmospheric pressure plasma at least on the area between the IC component mounting area and the electrode before or after applying the adhesive to the IC component mounting area, the atmospheric pressure of a simple device configuration is obtained. Since it can be processed efficiently by the plasma generator and the plasma is irradiated only to the region, it can be processed easily even after the IC component is mounted.

  In addition, before applying the adhesive to the IC component mounting area, a mask covering the other area except for the area between the IC component mounting area and the electrode is disposed on the substrate in the vacuum processing chamber. If this is done, only the area between the IC component mounting area and the electrode can be accurately exposed to the plasma with a mask placed close to the board before applying the adhesive to the board. Batch processing can be performed in a vacuum processing chamber without adverse effects or damage.

  The plasma treatment uses an inert gas that generates plasma and a reactive gas containing at least one of a fluorine-based gas, a gas containing C and F, a gas containing C and H, and an oxygen gas. Then, at least the region between the IC component mounting region of the substrate and the electrode is subjected to surface modification so as to have liquid repellency or lyophilicity, or an inert gas that generates plasma, at least a fluorine-based gas, C and Using a gas containing at least one of a gas containing F, a gas containing C and H, and an oxygen gas, at least a region having liquid repellency or lyophilicity on a region between the IC component mounting region and the electrode of the substrate. It is preferable to form a film. In this specification, the inert gas is a gas for generating plasma, and the inert gas includes nitrogen gas. Further, the fluorine-based gas, the gas containing C and F, and the gas containing C and H are used for the treatment having liquid repellency, and the oxygen gas is used for the treatment having lyophilic property.

  Further, the die bonding apparatus of the present invention includes a conveying means for conveying and positioning a substrate, a coating means for applying an adhesive within an IC component mounting area of the substrate, and a component mounting means for mounting an IC component on the substrate. The atmospheric pressure plasma generating means and the plasma moving means for moving the atmospheric pressure plasma generating means along at least the area between the IC component mounting area and the electrode of the substrate.

  According to this configuration, at least the region between the IC component mounting region and the electrode is liquid repellent by the step of transporting the substrate and applying the adhesive, the step of mounting the IC component, and the plasma treatment by the atmospheric pressure plasma generating means. Since the IC component is mounted, the region between the IC component and the surrounding electrodes has a liquid repellency or lyophilic property. It can be manufactured with high productivity.

  Further, the atmospheric pressure plasma generating means supplies the inert gas generating plasma to the plasma generating portion even if the mixed gas of the inert gas generating reactive plasma and the reactive gas is supplied to the plasma generating portion. In addition, a reactive gas may be mixed with the generated plasma. In the former case, it is necessary to reduce the concentration of the reactive gas in order to reliably generate plasma with low power, but in the latter case, the concentration of the reactive gas in the plasma can be increased to improve the processing efficiency. It can be carried out in a suitable manner. In the case of the former, the ratio of the reactive gas in the mixed gas is preferably 0.2 to 10%, and in the case of the latter, it can be from several percent to several times and is not particularly limited.

  Further, another die bonding apparatus of the present invention includes a transfer means for transferring and positioning a substrate, and plasma is applied only to a region between the IC component mounting region and the electrode of the substrate by covering the substrate with a mask in the vacuum processing chamber. And plasma processing means for processing the area so as to have liquid repellency or lyophilicity with respect to the adhesive composition liquid, and application means for applying the adhesive in the IC component mounting area of the substrate, And a component mounting means for mounting an IC component on the substrate.

  According to this configuration, the substrate is transported, and plasma processing is performed in the vacuum processing chamber in a state where only the area between the IC component mounting area and the electrode is accurately exposed by the mask, and has liquid repellency or lyophilicity. And the process of applying the adhesive and the process of mounting the IC component, the region between the IC component and the surrounding electrodes is liquid repellent or lyophilic. Can be manufactured with high productivity.

  The plasma processing means is preferably configured to supply a mixed gas of an inert gas and a reactive gas that generates plasma into the vacuum processing chamber.

The inert gas is preferably composed of a single gas or a mixed gas selected from argon, neon, xenon, helium and nitrogen gas, and the reactive gas includes fluorine-based gas, C and It is preferable to include at least one of a gas containing F, a gas containing C and H, and an oxygen gas. When a fluorine-based gas, a gas containing C and F, or a gas containing C and H is used, -CH 3 , -CF 3 ,-(CH 2 )-,-( The plasma irradiation surface can be surface-modified or formed into a film so as to have a functional group such as CF 2 ) —. Further, by using oxygen gas, the surface can be modified so as to have lyophilicity, or a film can be formed.

  The electronic component of the present invention is an electronic component in which an IC component is mounted and bonded onto a substrate, and the electrode of the IC component and the electrode of the substrate are connected by a wire, and at least the IC component mounting region of the substrate The region between the electrodes has liquid repellency or lyophilicity to the composition liquid of the adhesive that adheres the IC component.

  According to this configuration, in an electronic component that is mounted and bonded on a substrate and the electrode of the IC component and the electrode of the substrate are wire-connected, the adhesive composition liquid may ooze out to the electrode of the substrate and cause a bonding failure of the wire Therefore, an electronic component with high bonding reliability can be provided.

  In addition, if liquid repellency or lyophilicity is imparted by surface modification or film formation by plasma treatment, highly reliable treatment can be made with good productivity, so that the highly reliable electronic connection of the wire is inexpensive. Parts are obtained and suitable.

  According to the IC component mounting method of the present invention, at least the region between the IC component mounting region and the electrode is subjected to plasma treatment so that the IC component is made liquid-repellent or lyophilic with respect to the adhesive composition liquid. The leaching of the composition liquid of the adhesive to be bonded can be limited to a predetermined space between the IC component mounting area and the surrounding electrode, and the oozing of the composition liquid onto the electrode can be surely prevented. And poor wire connection between the electrodes of the substrate can be prevented.

  Embodiments of an IC component mounting method of the present invention, a die bonding apparatus used therefor, and a manufactured electronic component will be described below with reference to FIGS.

(First embodiment)
First, a first embodiment according to an IC component mounting method and an electronic component of the present invention will be described with reference to FIGS.

  First, the configuration of the electronic component of this embodiment will be described with reference to FIG. In FIG. 1, reference numeral 1 denotes an electronic component, which is configured by mounting an IC component 3 on a substrate 2. On the substrate 2, lands 4 that are mounting regions for the IC components 3 are formed, and a large number of electrodes 5 are formed around the regions 4 a serving as insulating spaces. The IC component 3 is bonded and fixed by an adhesive 6 applied on the land 4, and an electrode (not shown) provided on the IC component 3 and the electrode 5 of the substrate 2 are connected by a wire 7. In a region 4 a between the land 4 and the electrode 5 of the substrate 2, a liquid repellent surface 9 exhibiting liquid repellency with respect to the composition liquid 8 of the adhesive 6 is provided, and the composition liquid oozed from the adhesive 6 on the land 4. 8 is dammed by the liquid repellent surface 9, and exudation toward the electrode 5 is prevented. Needless to say, the region where the liquid repellent surface 9 is formed is not limited to the region 4a, but can be provided in other necessary regions.

  As shown in FIGS. 2A and 2B, the liquid repellent surface 9 in this embodiment is an atmospheric pressure plasma generator 10 in a state where the adhesive 6 is applied on the land 4 and the IC component 3 is mounted. The atmospheric pressure plasma generator 10 is moved along the entire circumference of the region 4 a between the land 4 and the electrode 5 while irradiating the plasma 11.

  Next, the entire manufacturing process of the electronic component 1 having the above configuration will be described with reference to FIG. In the first step (a), the adhesive 6 is applied on the lands 4 of the substrate 2, and in the next step (b), the IC component 3 is mounted on the lands 4 to be bonded and fixed, followed by the step (c). 2), the liquid repellent surface 9 is formed by moving the entire circumference of the region 4a between the land 4 and the electrode 5 while irradiating the plasma 11 from the atmospheric pressure plasma generator 10 as shown in FIG. In the next step, the substrate is heated to cure the adhesive (not shown), and then in step (d), the substrate 2 on which the IC component 3 is mounted is carried into a wire bonding apparatus (not shown). Then, the electrode of the IC component 3 and the electrode 5 of the substrate 2 are connected by the wire 7, and then in the step (e), the entire IC component 3 on the substrate 2 including the wire 7 is covered with the sealing resin 12, Finally, in step (f), the sealing resin 12 is cured to complete the electronic component 1.

  Next, a configuration example of the atmospheric pressure plasma generator 10 will be described with reference to FIGS. In the atmospheric pressure plasma generator 10 shown in FIG. 4, a coil 14 is wound around an outer periphery of a reaction tube 13 made of a dielectric, and a high-frequency voltage is applied to the coil 14 from a high-frequency power source 15. By supplying the gas 16, the plasma 11 is generated in the reaction tube 13, and the plasma 11 is blown out from the nozzle 13 a at the tip of the reaction tube 13. The atmospheric pressure plasma generator 10 is moved by the moving means 17 so that the liquid repellent surface 9 is formed in the area 4a around the land 4 as shown in FIG. Reference numeral 18 denotes a control unit that controls the moving means 17 to move along a preset movement route.

As a frequency band of the high frequency power supply 15, an RF frequency band represented by 13.56 MHz and a VHF frequency band represented by 100 MHz are suitable. A matching circuit (not shown) that suppresses reflected waves is interposed between the coil 14 and the high-frequency power source 15. As the gas 16 to be supplied, a mixed gas of an inert gas for generating plasma and a reactive gas for forming the liquid repellent surface 9 is preferably used. The inert gas is preferably composed of a single gas or a mixed gas selected from argon, neon, xenon, helium, and nitrogen gas. As the reactive gas, plasma irradiation is performed so as to have a functional group such as —CH 3 , —CF 3 , — (CH 2 ) —, — (CF 2 ) — which exhibits liquid repellency to the composition liquid of the adhesive 6. Any gas can be used as long as the surface can be surface-modified or formed into a film. Specifically, at least one of a fluorine-based gas, a gas containing C and F, a gas containing C and H, and an oxygen gas can be used. Is preferably included.

  As another configuration example of the atmospheric pressure plasma generator 10, as shown in FIG. 5, a pair of electrodes 19a and 19b are arranged at intervals on the outer periphery of a reaction tube 13 made of a dielectric material, and between the electrodes 19a and 19b. Alternatively, the plasma 11 may be blown out from the nozzle 13 a at the tip of the reaction tube 13 by applying a high-frequency voltage from the high-frequency power source 15 and supplying the gas 16 to the reaction tube 13.

  Also, as shown in FIG. 6, an inner electrode 21 is disposed inside a reaction tube 20 made of a dielectric, an outer electrode 22 is disposed on the outer periphery, and a high frequency voltage is applied between the electrodes 21 and 22 from a high frequency power source 15. It may be configured such that the plasma 11 generated in the reaction tube 20 by blowing the gas 16 into the reaction tube 20 is blown out from the nozzle 20a at the tip.

  In the above configuration example, the mixed gas 16 of the inert gas and the reactive gas is supplied to the reaction tubes 13 and 20, but as shown in FIG. A gas supply pipe 23 is provided so that gas can be supplied toward the vicinity of the gas, and only the inert gas 24 is supplied to the reaction pipe 13 to blow out the plasma 11 from the nozzle 13a. The liquid repellent surface 9 may be formed by supplying the reactive gas 25 from the supply pipe 23. As described above, the configuration in which the reactive gas 25 is supplied toward the plasma 11 is preferable because the active species density of the reactive gas in the vicinity of the plasma 11 can be increased and the processing can be performed efficiently.

  4 to 7 show examples of the configuration of the atmospheric pressure plasma generator. However, the atmospheric pressure plasma generator is not limited to these. For example, a dielectric is disposed on at least one of the two electrodes. Alternatively, a configuration may be adopted in which gas is supplied to a reaction tube formed between a dielectric and two electrodes, and a high-frequency voltage is applied between the electrodes. Moreover, examples of the frequency band of the high-frequency voltage to be applied include a VHF frequency band typified by 13.56 MHz and a VHF frequency band typified by 100 MHz, but are not limited to this. A sine wave, rectangular wave, or pulse wave between several hundred MHz can be used.

(Second Embodiment)
Next, a second embodiment according to the IC component mounting method of the present invention will be described with reference to FIGS.

  In the first embodiment, after the adhesive 6 is applied on the land 4 of the substrate 2 and the IC component 3 is mounted, the plasma treatment for forming the liquid repellent surface 9 by the atmospheric pressure plasma generator 10 is performed. In this embodiment, as shown in FIGS. 8A and 8B, the atmospheric pressure plasma is applied before the adhesive 6 is applied onto the land 4 of the substrate 2 and the IC component 3 is mounted. The liquid repellent surface 9 is formed by moving the atmospheric pressure plasma generator 10 along the entire circumference of the region 4 a between the land 4 and the electrode 5 of the substrate 2 while blowing out the plasma 11 from the generator 10.

  The whole manufacturing process of the electronic component 1 will be described with reference to FIG. In the first step (a), as shown in FIG. 8, while the plasma 11 is irradiated from the atmospheric pressure plasma generator 10, the entire circumference of the region 4 a between the land 4 and the electrode 5 is moved to repel the liquid. Surface 9 is formed, and then, in step (b), adhesive 6 is applied onto land 4 of substrate 2, and IC component 3 is mounted on land 4 and bonded and fixed in next step (c). In the next step, the substrate is heated to cure the adhesive (not shown), and subsequently, in step (d), the substrate 2 on which the IC component 3 is mounted is carried into a wire bonding apparatus (not shown). Then, the electrode of the IC component 3 and the electrode 5 of the substrate 2 are connected by the wire 7, and then in the step (e), the entire IC component 3 on the substrate 2 including the wire 7 is covered with the sealing resin 12, Finally, in step (f), the sealing resin 12 is cured to complete the electronic component 1.

(Third embodiment)
Next, a third embodiment according to the die bonding apparatus of the present invention will be described with reference to FIGS.

  As shown in FIG. 10, the die bonding apparatus 30 according to the present embodiment includes a conveyance unit 31 that intermittently conveys the substrate 2 provided with a plurality of lands 4 at intervals of the lands 4. Along the conveyance direction 31, a coating portion 32 for the adhesive 6, a component mounting portion 33 for mounting the IC component 3, and a liquid repellent surface forming portion 34 by plasma treatment are disposed. A coating unit 35 is disposed in the coating unit 32. The coating means 35 is supported so that the coating nozzle 35a can be moved and positioned three-dimensionally by an X-axis table 35b, a Y-axis table 35c, and a Z-axis table 35d. A dispenser 35e for supplying the adhesive 6 toward the application nozzle 35a is provided, and an air tube 35f provided with a discharge control valve 35g for controlling the discharge amount is applied in order to accurately discharge a required amount of the adhesive 6. It is connected to the nozzle 35a.

  The component mounting unit 33 is provided with a component mounting unit 36 and an IC component supply unit 37. An arbitrary IC component 3 in the IC component supply unit 37 is taken out by the component mounting unit 36 and mounted on the land 4 of the substrate 2. Is configured to do. The IC component supply unit 37 is configured so that a wafer on which a large number of IC components 3 are created is cut and separated for each IC component 3. The component mounting means 36 is supported such that the nozzle 36a that sucks and holds the IC component 3 can be moved and positioned three-dimensionally by a mounting head 36d incorporating an X-axis table 36b, a Y-axis table 36c, and a Z-axis moving mechanism. Has been.

  The liquid repellent surface forming portion 34 is provided with an atmospheric pressure plasma generating means 38 and a plasma moving means 39 for moving the plasma nozzle 38a. The plasma nozzle 38a corresponds to the reaction tube 13 or 20 of the above embodiment, and gas is supplied from the plasma generating means main body 38d incorporating the gas supply means and the high frequency power source through the gas supply tube 38b, and the high frequency voltage is supplied through the cable 38c. Have been supplied. The plasma moving means 39 is configured to move and position the plasma nozzle 38a three-dimensionally by the Y-axis table 39a, the X-axis table 39b, and the Z-axis table 39c. Thus, the plasma nozzle 38 a moves along the region 4 a between the land 4 and the electrode 5 of the substrate 2 while blowing out the plasma 11, thereby forming the liquid repellent surface 9.

  As shown in FIG. 11, the die bonding apparatus 30 controls the transport unit 31, the component mounting unit 36, the IC component supply unit 37, the atmospheric pressure plasma generation unit 38, and the plasma moving unit 39 with a control unit 40. It is configured. The control unit 40 is connected to a storage unit 41 that stores a predetermined operation program and various data, an operation unit 42 that inputs an operation command and data, and a display unit 43 that displays necessary data to an operator. ing.

  According to the die bonding apparatus 30 of this embodiment, while the substrate 2 is transported, the step of applying the adhesive 6, the step of mounting the IC component 3, and the plasma treatment by the atmospheric pressure plasma generation means 38 are performed. Since the step of imparting liquid repellency to the region 4a between the land 4 and the electrode 5 is sequentially performed, the region 4a between the IC component 3 and the electrode 5 around the IC component 3 is liquid repellant. Can be manufactured with good productivity.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to FIGS. This embodiment relates to the IC component mounting method of the second embodiment, and before applying the adhesive 6 to the land 4 on which the IC component 3 is mounted, the region 4a between the surrounding electrodes 5 is provided. Another configuration example of the process of treating the liquid repellent surface 9 is shown.

  In the third embodiment, the atmospheric pressure plasma generation means 38 is used. However, in this embodiment, the substrate 2 is covered with a mask 52 in a vacuum processing chamber 51 as shown in FIG. The plasma processing means 50 is used to irradiate the plasma only on the region 4 a between the land 4 and the electrode 5, and to treat the region 4 a so as to become the liquid repellent surface 9 for the composition liquid of the adhesive 6. In FIG. 12A, reference numeral 53 denotes a substrate electrode on which the substrate 2 is installed, to which a high frequency power source 54 is connected. Reference numeral 55 denotes a counter electrode disposed to face the substrate electrode, and is grounded. Then, while the vacuum processing chamber 51 is evacuated and maintained at a predetermined vacuum pressure, a mixed gas of an inert gas and a reactive gas is introduced by a gas introduction means (not shown), and a high-frequency voltage is applied to the substrate electrode 53. Is generated between the substrate electrode 53 and the counter electrode 55, and the plasma 56 is exposed from the exposed opening 52 a formed in the mask 52 as shown in FIG. 12C to the region 4 a of the substrate 2. As shown in FIG. 12B, a liquid repellent surface 9 is formed. In the case where a plurality of lands 4 are provided on the substrate 2, for example, as shown in FIG. 12D, a mask in which an exposed opening 52a is formed in the surrounding area corresponding to each land 4. 52 is used.

  FIG. 12 shows the basic configuration of the present embodiment. Next, a more specific configuration example will be described with reference to FIGS. 13 and 14. FIG. 13 shows the main part of the die bonding apparatus 60 in the present embodiment, and the plasma processing means 50 using the vacuum processing chamber 51 and the substrate 2 in the transport direction of the transport means 61 for transporting and positioning the substrate 2. Application means (not shown) for applying the adhesive 6 to the lands 4 and component mounting means (not shown) for mounting the IC components 3 on the lands 4 are arranged. These application means and component mounting means are the same as those in the third embodiment described with reference to FIG.

  In the present embodiment, a substrate supply unit 62 that sequentially supplies the substrates 2 to the transport unit 61 is disposed at the start end of the transport unit 61, and a plasma processing unit 50 is disposed near the start end of the transport unit 61. The vacuum processing chamber 51 of the plasma processing means 50 is configured to be openable and closable on the transfer means 61 by a main body case 63 that is moved up and down by a cylinder 64, and the substrate 2 is carried in and out with the main body case 63 opened upward. Is configured to do. A seal member 63 a is provided at the lower end of the main body case 63 and presses against the upper surface of the transport means 61 to form the vacuum processing chamber 51 in a sealed manner. The body case 63 is provided with an exhaust port 65 and a gas introduction port 66, which are connected to a vacuum pump 67 and a gas supply unit 68, respectively, and are evacuated as described above to maintain an inert gas and a predetermined vacuum pressure. A mixture of reactive gases is introduced. Reference numeral 69 denotes a transfer means for the substrate 2 having a guide rod, and 69a denotes a transfer claw.

  As shown in FIG. 14, the mask 52 is supported by the main body case 63 and the counter electrode 55 by the connecting member 70, and the main body case 63 is lowered by the cylinder 64 so that the vacuum processing chamber 51 is hermetically formed. Therefore, it is configured to be disposed on or close to the substrate 2. The mask 52 may be an insulator mask or a conductor mask. In the case of a conductor mask, the mask 52 may be in a state of being electrically floated from the substrate electrode 53 and the counter electrode 55.

  According to the die bonding apparatus 60 of the present embodiment, while the substrate 2 is transported by the transport unit 61, the region 4 a between the land 4 and the electrode 5 is liquid repellent by plasma processing by the plasma processing unit 50. , The step of applying the adhesive 6 and the step of mounting the IC component 3 are sequentially performed, so that the region 4a between the IC component 3 and the electrode 5 around the IC component 3 is formed. The substrate 2 having liquid repellency can be manufactured with high productivity.

  In the description of each of the above embodiments, an example in which the substrate 2 is surface modified so as to form the liquid repellent surface 9 with respect to the composition liquid 8 of the adhesive 6 by plasma treatment has been mainly described. In addition to the reforming, the film may be formed by adjusting and setting the plasma processing conditions such as changing the reactive gas to be used. The film having liquid repellency (oil) is not particularly limited as long as it exhibits the properties, but among them, a fluorocarbon polymer film (see JP-A No. 2002-220668, etc.) is most preferable, and a reactive gas A gas for forming this film, for example, PFC gas (perfluorocarbon gas) can be preferably used.

  Furthermore, in the above description of the embodiment, an example in which the adhesive 6 has liquid repellency with respect to the composition liquid 8 has been described. Since the exudation of the liquid 8 is strongly limited within the lyophilic surface and the outer side is relatively liquid-repellent, the same effect can be obtained. This lyophilic plasma treatment can be realized, for example, by using oxygen gas as a reactive gas. The reactive gas is not limited to oxygen gas, and any gas can be used as long as it can be made lyophilic with respect to the composition liquid 8 that may ooze out in the various adhesives 6. Can be used.

  According to the present invention, the composition of the adhesive that adheres the IC component by plasma-treating the region between the IC component mounting region and the electrode and imparting liquid repellency or lyophilicity to the composition liquid of the adhesive. The oozing of the liquid can be limited to a predetermined space between the IC component mounting area and the surrounding electrodes, and the oozing of the composition liquid onto the electrodes can be surely prevented. Since the occurrence of poor wire connection can be prevented, it can be suitably used for an electronic component in which an IC component is mounted on a substrate and wire-connected.

Sectional drawing of the state which remove | excluding sealing resin of the electronic component to which 1st Embodiment of IC component mounting method of this invention is applied. The plasma processing in the embodiment is shown, (a) is a plan view of the processed state, (b) is a front view of the plasma processing step. The manufacturing process figure of the electronic component of the embodiment. The front view which shows schematic structure of the 1st structural example of the atmospheric pressure plasma generator used in the embodiment. The perspective view which shows schematic structure of the 2nd structural example of the atmospheric pressure plasma generator used in the embodiment. The partial cross section front view which shows schematic structure of the 3rd structural example of the atmospheric pressure plasma generator used in the embodiment. The perspective view which shows schematic structure of the 4th structural example of the atmospheric pressure plasma generator used in the embodiment. The plasma processing in 2nd Embodiment of the IC component mounting method of this invention is shown, (a) is the top view of the processed state, (b) is a front view of a plasma processing process. The manufacturing process figure of the electronic component of the embodiment. The perspective view which shows the die bonding apparatus of the 3rd Embodiment of this invention. The block diagram which shows the control part structure of the die-bonding apparatus. The principle structure of the plasma processing means in the die-bonding apparatus of the 4th Embodiment of this invention is shown, (a) is a longitudinal front view, (b) is a top view of a plasma processing state, (c) is a top view of a mask, (D) is a top view of the other structural example of a mask. The perspective view of the principal part of the embodiment. The longitudinal section front view of the plasma processing means in the embodiment. The perspective view of the adhesive agent application process of the IC component mounting method of a prior art example. Sectional drawing of the wire connection state in the IC component mounting method of another prior art example.

Explanation of symbols

1 Electronic component 2 Substrate 3 IC component 4 Land (mounting area)
4a Region between land 4 and electrode 5 5 Electrode 6 Adhesive 7 Wire 8 Composition liquid 9 Liquid repellent surface 10 Atmospheric pressure plasma generator 11 Plasma 23 Gas supply pipe 24 Inert gas 25 Reactive gas 30 Die bonding apparatus 31 Transport Means 35 Coating means 36 Component mounting means 38 Atmospheric pressure plasma generating means 39 Plasma moving means 50 Plasma processing means 51 Vacuum processing chamber 52 Mask 60 Die bonding apparatus 61 Conveying means

Claims (14)

  1.   In an IC component mounting method in which an IC component is mounted on a substrate and bonded, and then the IC component electrode and the substrate electrode are connected by a wire, before the connection by the wire, at least the IC component mounting region of the substrate and the electrode A method of mounting an IC component, characterized in that a plasma treatment is performed on a region between the two to make the composition liquid of an adhesive for adhering the IC component lyophobic or lyophilic.
  2.   2. The IC according to claim 1, wherein the plasma treatment is performed by blowing atmospheric pressure plasma at least on a region between the IC component mounting region and the electrode before or after applying the adhesive to the IC component mounting region. Component mounting method.
  3.   Before applying the adhesive to the IC component mounting area, plasma processing should be performed by placing a mask covering the other area except for the area between the IC component mounting area and the electrode on the substrate in the vacuum processing chamber. The IC component mounting method according to claim 1.
  4.   The plasma treatment uses at least a substrate by using an inert gas that generates plasma and a reactive gas including at least one of a fluorine-based gas, a gas including C and F, a gas including C and H, and an oxygen gas. The IC component mounting method according to claim 1, wherein surface modification of a region between the IC component mounting region and the electrode is performed.
  5.   The plasma treatment is performed using an inert gas that generates plasma, at least a fluorine-based gas, a gas containing C and F, a gas containing C and H, and a gas containing at least one of oxygen gas, and at least an IC of the substrate. 4. The IC component mounting method according to claim 1, wherein a liquid-repellent or lyophilic film is formed on a region between the component mounting region and the electrode.
  6.   Conveying means for conveying and positioning the substrate, coating means for applying an adhesive in the IC component mounting area of the substrate, component mounting means for mounting the IC component on the substrate, atmospheric pressure plasma generating means, and atmospheric pressure A die bonding apparatus comprising plasma moving means for moving plasma generating means along at least a region between an IC component mounting region and an electrode on a substrate.
  7.   7. The die bonding apparatus according to claim 6, wherein the atmospheric pressure plasma generating means is configured to supply a mixed gas of an inert gas and a reactive gas that generates plasma to the plasma generating portion.
  8.   7. The die bonding according to claim 6, wherein the atmospheric pressure plasma generating means is configured to supply an inert gas for generating plasma to the plasma generating portion and to mix a reactive gas with the generated plasma. apparatus.
  9.   A conveying means for conveying and positioning the substrate, and a substrate is covered with a mask in the vacuum processing chamber, and plasma is irradiated only to a region between the IC component mounting region and the electrode of the substrate, and the region is a composition liquid of an adhesive Plasma processing means for treating the substrate so as to have liquid repellency or lyophilicity, coating means for applying an adhesive in the IC component mounting area of the substrate, and component mounting means for mounting the IC component on the substrate, A die bonding apparatus comprising:
  10.   10. The die bonding apparatus according to claim 9, wherein the plasma processing means is configured to supply a mixed gas of an inert gas and a reactive gas that generates plasma into the vacuum processing chamber.
  11.   11. The die bonding apparatus according to claim 7, wherein the inert gas is composed of a single gas selected from argon, neon, xenon, helium, and nitrogen gas or a plurality of mixed gases.
  12.   11. The die bonding apparatus according to claim 7, wherein the reactive gas includes at least one of a fluorine-based gas, a gas containing C and F, a gas containing C and H, and an oxygen gas. .
  13.   An electronic component in which an IC component is mounted and bonded on a substrate, and the electrode of the IC component and the electrode of the substrate are connected by a wire, and at least the region between the IC component mounting region and the electrode of the substrate is the IC component An electronic component having liquid repellency or lyophilicity with respect to a composition liquid of an adhesive for adhering an adhesive.
  14.   14. The electronic component according to claim 13, wherein the liquid repellency or lyophilicity is imparted by surface modification or film formation by plasma treatment.
JP2006113570A 2006-04-17 2006-04-17 IC component mounting method and die bonding apparatus Expired - Fee Related JP4702157B2 (en)

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JP2014060306A (en) * 2012-09-19 2014-04-03 Renesas Electronics Corp Semiconductor device manufacturing method
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US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
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GB2561921A (en) * 2017-04-28 2018-10-31 Cirrus Logic Int Semiconductor Ltd MEMS Device and process

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