JP2007273619A - Method for predicting rate of change, storage medium, and substrate-treating system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for predicting a rate of change achieving the equalization of the rate of change of the specification value of a specified film on a substrate and being capable of eliminating the need for the experimental acquisition of the strength of electron beams. <P>SOLUTION: In a substrate treating system 10, when the Low-k film of a wafer W is modified while changing the charging current value of an electron-beam tube 15 at the central section of an electron-beam irradiating mechanism 16, the distribution of the shrinkage rate of the Low-k film is measured (a step S71), and the relationship of the charging current value and the shrinkage rate measured in a section just under the electron-beam tube 15 is computed (the step S72). In the substrate treating system 10, the distribution of a dosage computed by a simulation is converted into the distribution of the shrinkage rate of the Low-k film on the basis of the ratio of the charging current value to the dosage and a power curve indicating the relationship of the charging current value and the measured shrinkage rate in this case (the step 74 and step 75). <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a change rate prediction method, a storage medium, and a substrate processing system, and more particularly, to a change rate prediction method for specification values of a film formed on a substrate.

  As semiconductor devices are highly integrated, the wiring structure on the substrate is becoming finer. Therefore, it is important to reduce the parasitic capacitance due to the insulating film between the wirings. In recent years, various organic materials and inorganic materials having a low dielectric constant have been developed in order to reduce parasitic capacitance due to an insulating film between wirings. Of these, organic materials are used as interlayer insulating films and protective films as low-k materials. The low-k film material is applied to the surface of the substrate using, for example, a spin coater and a baking furnace, and is subjected to heat treatment to form an SOD (Spin on dielectrics) film as an interlayer insulating film. However, the SOD film is a film formed by applying a liquid material, and further has a low mechanical strength in order to increase the porosity and ensure a low dielectric constant.

  As a method for improving the mechanical strength of an interlayer insulating film formed from a low-k film material, a polymer dielectric composition is formed by exposing a low dielectric polymer dielectric composition layer as an interlayer insulating film to an electron beam. A method of curing (modifying or curing) a physical layer is known (for example, see Patent Document 1).

  A curing apparatus (substrate processing apparatus) for modifying an interlayer insulating film by irradiating the interlayer insulating film with an electron beam includes a plurality of electron beam tubes. The plurality of electron beam tubes are equally arranged in a horizontal plane so that the interlayer insulating film on the substrate is uniformly irradiated with the electron beam from each electron beam tube. In addition, the curing device includes a mounting table with a built-in heater, and the mounting table heats the mounted substrate. Since the low-k film material has the property of a thermosetting resin, the interlayer insulating film can be modified by heating the substrate.

  When the interlayer insulating film is modified, the thickness of the interlayer insulating film is reduced. However, since the semiconductor device is cut out from each part of the substrate in the substrate, the reduction rate of the thickness of the interlayer insulating film on the substrate (hereinafter referred to as “shrink rate”) Need to be uniform.

However, when the thickness of the interlayer insulating film modified by the curing apparatus is measured, it is known that the shrinkage rate is not uniform on the substrate. For example, the shrinkage ratio directly under the electron beam tube is large, and the shrinkage ratio at a location away from the electron beam tube is small. Therefore, in the curing apparatus, the shrinkage rate on the substrate is made uniform by adjusting the intensity of the electron beam from each electron beam tube. The intensity of the electron beam can be predicted by using commercially available simulation software using the Monte Carlo method or the like.
Special table 2000-511006 gazette

  However, the electron beam intensity predicted using commercially available simulation software is qualitatively accurate, but not quantitatively accurate. Therefore, the shrinkage rate on the substrate cannot be quantitatively predicted from the intensity of the electron beam predicted by the simulation, and the shrinkage rate on the substrate cannot be made uniform using the simulation.

  Therefore, by actually modifying the interlayer insulating film on several substrates while changing the electron beam intensity, the electron beam intensity can be experimentally realized to achieve a uniform shrink rate on the substrate. Need to ask.

  An object of the present invention is to provide a rate-of-change prediction method, a storage medium, and a substrate processing system that can eliminate the need to experimentally obtain the intensity of an electron beam that realizes a uniform rate of change of a specification value of a predetermined film on a substrate. Is to provide.

  In order to achieve the above object, the rate of change prediction method according to claim 1 includes a plurality of electron beam irradiation units that irradiate a predetermined film formed on a substrate with an electron beam, and a predetermined process on the predetermined film. In the substrate processing apparatus provided with a processing unit for performing the processing, the predetermined value of the predetermined film when the predetermined film is changed by irradiating the predetermined film with the electron beam and performing the predetermined processing is used. A change rate prediction method for predicting a change rate, wherein the predetermined film is irradiated with the electron beam while changing a current value applied to the single electron beam irradiation unit. A change rate measurement step of measuring a change rate of a specification value of the predetermined film when the predetermined processing is performed on the predetermined film by the processing unit; and from the single electron beam irradiation unit A single electron beam related value calculating step of calculating a related value of the input current received by the film by simulation; a relationship calculating step of calculating a relationship between the changing input current value and the actually measured change rate; An input current value related value step for calculating a related value of the input current when the electron beam is irradiated from the electron beam irradiation unit by simulation, and the calculated related value of the input current based on the relationship And a change rate conversion step for converting into a change rate of the specification value of the film.

  The change rate prediction method according to claim 2 is the change rate prediction method according to claim 1, wherein the change in the specification value of the predetermined film on the substrate is based on the change rate of the converted specification value of the predetermined film. It has the uniformity calculation step which calculates the uniformity of a rate, It is characterized by the above-mentioned.

  The change rate prediction method according to claim 3 is the change rate prediction method according to claim 1 or 2, wherein the predetermined film is an interlayer insulating film, and a change rate of a specification value of the predetermined film is the interlayer insulating film. The related value of the input current is a dose amount in the substrate.

  The change rate prediction method according to claim 4 is the change rate prediction method according to any one of claims 1 to 3, wherein the processing unit is a heater and the predetermined process is a heat treatment. To do.

  In order to achieve the above object, a storage medium according to claim 5 is provided with a plurality of electron beam irradiation units for irradiating a predetermined film formed on a substrate with an electron beam, and performing a predetermined process on the predetermined film. In a substrate processing apparatus comprising a processing unit, a change rate of a specification value of the predetermined film when the predetermined film is changed by irradiating the predetermined film with the electron beam and performing the predetermined processing A computer-readable storage medium for storing a program for causing a computer to execute a change rate prediction method for predicting a change rate, wherein the program changes the input current value to the single electron beam irradiation unit. In the case where the predetermined film is irradiated with the electron beam from the electron beam irradiation unit and the predetermined processing is performed on the predetermined film by the processing unit. A change rate measurement module for actually measuring a change rate of a specification value of a constant film; a relationship calculation module for calculating a relationship between the changed input current value and the measured change rate; and a plurality of the electron beam irradiation units An input current value related value module that calculates a related value of an input current when the electron beam is irradiated by simulation, and the calculated related value of the input current is calculated based on the relationship with the specification value of the predetermined film. It has a change rate conversion module for converting into a change rate.

  In order to achieve the above object, a substrate processing system according to claim 6, wherein a predetermined film formed on the substrate is irradiated with an electron beam, and a predetermined process is performed on the predetermined film. A substrate processing system comprising a substrate processing apparatus having a processing unit and a control device for controlling the substrate processing apparatus, wherein the control device changes a current value applied to a single electron beam irradiation unit, The measured value of the change rate of the specification value of the predetermined film when the predetermined film is irradiated with the electron beam from the single electron beam irradiation unit and the predetermined processing is performed on the predetermined film by the processing unit. And the relationship between the changing input current value and the related value of the input current when the electron beam is irradiated from the plurality of electron beam irradiation units calculated by simulation. , Characterized by conversion to the rate of change of the specifications of the predetermined film on the basis of the relationship.

  The substrate processing system according to claim 7 is the substrate processing system according to claim 6, wherein the control device irradiates from each electron beam irradiation unit based on a change rate of the converted specification value of the predetermined film. The intensity of the electron beam to be adjusted is adjusted.

  9. The substrate processing system according to claim 8, wherein the control device is configured to perform uniformity of the change rate on the substrate based on a change rate of the converted specification value of the predetermined film. And the intensity of the electron beam emitted from each of the electron beam irradiation units is adjusted based on the calculated uniformity of the change rate.

  According to the change rate prediction method according to claim 1, the storage medium according to claim 5, and the substrate processing system according to claim 6, the input current value that changes to the single electron beam irradiation unit and the single electron beam irradiation When the predetermined film is irradiated with the electron beam from the unit and the predetermined process is performed on the predetermined film by the processing unit, the relationship with the measured value of the change rate of the predetermined value of the predetermined film is calculated and calculated by simulation Since the related value of the input current when the electron beam is irradiated from a plurality of electron beam irradiation units is converted into the change rate of the specification value of the predetermined film based on the above relationship, the specification value of the predetermined film by simulation The change rate of the film can be quantitatively predicted, so that the change rate of the specification value of the predetermined film can be made uniform using simulation. Therefore, it is possible to eliminate the need for experimentally obtaining the intensity of the electron beam that realizes the uniform change rate of the specification value of the predetermined film on the substrate.

  According to the change rate prediction method according to claim 2, the uniformity of the change rate of the specification value of the predetermined film on the substrate is calculated on the basis of the converted change rate of the specification value of the predetermined film. The rate of change of the specification value of the film can be made uniform quickly.

  According to the change rate predicting method of the third aspect, it is possible to eliminate the need to experimentally obtain the electron beam intensity for realizing the uniform thickness reduction rate of the interlayer insulating film on the substrate.

  According to the change rate prediction method of the fourth aspect, the processing unit is a heater, and the predetermined processing is heat treatment. The change in the specification value of the predetermined film is also promoted by heat treatment, but the change rate of the specification value of the predetermined film is quantitatively determined by simulation by converting the change rate of the specification value of the predetermined film based on the above relationship. It can be predicted accurately.

  According to the substrate processing system of the seventh aspect, since the intensity of the electron beam irradiated from each electron beam irradiation unit is adjusted based on the converted rate of change of the specification value of the predetermined film, the predetermined value on the substrate is determined. Therefore, it is possible to quickly find out the intensity of the electron beam that realizes the uniform change rate of the specification value of the film, and the uniform change rate of the specification value of the predetermined film can be quickly and easily performed.

  According to the substrate processing system of claim 8, the uniformity of the change rate on the substrate is calculated based on the converted change rate of the specified value of the predetermined film, and the calculated change rate is uniform. Since the intensity of the electron beam irradiated from each electron beam irradiation unit is adjusted based on the characteristics, the intensity of the electron beam that realizes the uniform change rate of the specification value of the predetermined film on the substrate can be found more quickly. Therefore, the rate of change of the specification value of a predetermined film can be made uniform more quickly and easily.

  Hereinafter, a substrate processing system according to an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment.

In FIG. 1, the substrate processing system 10 includes a curing device 11 and a control device 12. The curing apparatus 11 is an interlayer insulating film formed on the surface of a semiconductor wafer W (hereinafter simply referred to as “wafer W”) for an electronic device as a substrate, for example, Low − containing SiO ₂ and methyl groups as main components. The low-k film is modified by irradiating the k film (predetermined film) with an electron beam.

  The curing device 11 is made of, for example, aluminum and the like, and the inside of the curing device 11 is configured to be hermetically closed and accommodates the wafer W, and is disposed inside the accommodation chamber 13 and on the wafer W. With respect to the wafer W placed on the mounting table 14 and the mounting table 14 on which the wafer W is mounted substantially horizontally with the Low-k film facing upward And an electron beam irradiation mechanism 16 that irradiates an electron beam.

  The electron beam irradiation mechanism 16 includes 19 electron beam tubes 15 (electron beam irradiation units) that are equally arranged in a horizontal plane, and the 19 electron beam tubes 15 are mounted on the mounting table 14. Are arranged so as to occupy a circular region of substantially the same shape and are arranged concentrically. The electron beam irradiated from the electron beam irradiation mechanism 16 repeatedly collides and diffuses with inert molecules in the processing space in the storage chamber 13 to form a radial electron flow. The “electron beam” in the present embodiment is this Such an electron flow is meant.

  The mounting table 14 adjusts the distance between the electron beam irradiation mechanism 16 and the wafer W when the electron beam is irradiated onto the wafer W. The mounting table 14 has a heater (processing unit) (not shown) disposed on the mounting surface of the wafer W of the mounting table 14, and the heater heats the wafer W to a predetermined temperature and is low-k. The film is subjected to heat treatment (predetermined treatment).

  The control device 12 includes a computer or the like, and is connected to each component of the curing device 11, for example, each electron beam tube 15. The operation of each component, for example, the intensity of the electron beam irradiated by the electron beam tube 15 and the heater Controls the amount of heat emitted by. The control device 12 is also connected to a film thickness measuring device (not shown) that measures the thickness of the Low-k film on the wafer W, and is based on the thickness of the Low-k film actually measured by the film thickness measuring device. Thus, the shrink rate (the rate of change of the specification value of the predetermined film, the thickness reduction rate) which is the reduction rate of the thickness of the Low-k film is calculated. That is, the substrate processing system 10 can measure the shrink rate of the low-k film.

  In addition, the control device 12 calculates a dose (related value of input current), which is an injection amount of electrons per unit area, by simulation as the intensity of the electron beam irradiated onto the wafer W from one electron beam tube 15. Is also connected to a simulator (not shown).

  By the way, prior to the present invention, the inventor places the wafer W on the mounting table 14 in the substrate processing system 10 as shown in FIG. 2, and moves the electrons toward the Low-k film 17 of the wafer W. When the low-k film 17 is modified by irradiating the electron beam 18 only from the electron beam tube 15 at the center of the beam irradiation mechanism 16 and heating the wafer W by the heater of the mounting table 14, the low− The distribution of the shrink rate of the k film was measured.

  Specifically, the distribution of the shrink rate of the Low-k film when the input current value to the electron beam tube 15 that is closely related to the dose amount was changed was measured. Further, the distribution of the actually measured shrink rate was plotted on a graph with the horizontal axis representing the distance from the center of the wafer W (see FIG. 3).

  As shown in the graph of FIG. 3, when the intensity of the irradiated electron beam 18 is increased by increasing the input current value, the overall shrink rate increases, but this is particularly true immediately below the electron beam tube 15. It has been found that the shrink rate at the center of the wafer W to be increased is remarkably increased. That is, it has been found that the shrinkage ratio varies depending on the part. It was also found that the low-k film shrinks even when the input current value is 0 μA. This was considered due to the heating of the heater.

  Next, when the input current value is set to 2800 μA, the present inventor calculates the dose distribution by the electron beam irradiated to the wafer W from one electron beam tube 15 by simulation, as shown in the graph of FIG. The calculated dose distribution was superimposed on the measured shrinkage distribution when the input current value was 2800 μA with the distance from the center of the wafer W as the horizontal axis. At this time, as shown in the graph of FIG. 4, it was found that the dose distribution calculated by the simulation is different from the actually measured shrinkage distribution.

  Therefore, the present inventor has paid attention to the relationship between the dose amount and the shrink rate in order to eliminate the deviation between the dose amount distribution and the shrink rate distribution. Specifically, paying attention to the relationship between the input current value and the shrink rate, which is closely related to the dose amount, the input current value and the measured shrink rate at the center of the wafer W (directly under the electron beam tube 15) are shown in the graph of FIG. Got a relationship.

  FIG. 5 is a graph showing the relationship between the input current value and the actually measured shrink rate.

  In the graph of FIG. 5, the relationship between the input current value and the actually measured shrinkage ratio is as follows. When the input current value is “y” and the shrinkage ratio is “x”, an approximate curve, for example, a power represented by the following equation (1) I found that it was represented by a curve.

y = 20.898x ^2.4332 ...... (1)
Note that the relationship between the input current value and the actually measured shrinkage rate was not represented by a straight line was considered to be due to the effect of heat treatment by the heater. Note that the relationship between the input current value and the actually measured shrinkage ratio changes according to the specifications of the electron beam tube, and so is not limited to the above power curve.

  Further, the relationship between the input current value represented by the graph of FIG. 5 and the actually measured shrinkage ratio is as follows: the input current value input to one electron beam tube 15 and immediately below the one electron beam tube 15. As described above, this relationship is represented by an approximate curve, for example, a power curve, and each electron beam tube 15 (of 19 electron beam tubes 15 in the electron beam irradiation mechanism 16). The relationship between the input current value input to each) and the average value of the total low-k film shrinkage ratio on the wafer W can also be expressed by an approximate curve, for example, a power curve.

  Next, based on the relationship between the obtained input current value and the actually measured shrink rate (the above formula (1)), the measured shrink rate when the input current value is 2800 μA is converted into the input current value. As shown in the graph of FIG. 6, it was found that the distribution of the converted input current value and the distribution of the dose amount calculated by the simulation almost coincide. Therefore, it was found that the measured shrinkage rate can be predicted from the dose distribution calculated by the simulation, using the relationship between the input current value and the actually measured shrinkage rate.

  Next, a shrink rate prediction method for a Low-k film as a change rate prediction method according to the present embodiment will be described. The shrink rate prediction method is based on the knowledge obtained above.

  FIG. 7 is a flowchart of a shrink rate prediction method for a Low-k film as a change rate prediction method according to the present embodiment.

  In FIG. 7, first, the electron beam is irradiated only from the electron beam tube 15 toward the Low-k film of the wafer W while changing the input current value of the electron beam tube 15 at the center of the electron beam irradiation mechanism 16. At the same time, the wafer W is heated by the heater of the mounting table 14 to actually measure the distribution of shrinkage of the Low-k film when the modification of the Low-k film is performed (step S71) (change rate measurement step).

  Next, a power curve indicating the relationship between the input current value and the measured shrinkage ratio at the center of the wafer W (just below the electron beam tube 15) is calculated (relation calculation step) (step S72). The relationship represented by the power curve calculated at this time may be a relationship between an input current value input to one electron beam tube 15 and an actual shrink rate directly under the one electron beam tube 15. The relationship between the input current value input to each electron beam tube 15 (each of the 19 electron beam tubes 15) in the electron beam irradiation mechanism 16 and the average value of the total Low-k film shrinkage ratio on the wafer W, Also good.

  Next, the distribution of the dose amount by the electron beam applied to the wafer W from the 19 electron beam tubes 15 is calculated by simulation (input current value related value step) (step S73). Specifically, as shown in FIG. 8, a distance from each electron beam tube 15 to a point P on the wafer W is calculated, and an electron beam irradiated from each electron beam tube 15 based on the calculated distance. The integrated value of the dose amount is calculated. Then, by calculating the integrated value of the dose at each point on the wafer W, the distribution of the dose is calculated.

  Next, the calculated dose distribution is converted into an applied current value distribution (step S74). For this conversion, for example, the ratio between the input current value and the dose amount in the graph of FIG. 6 is used. Further, the distribution of the converted input current value is converted into the distribution of the shrink rate of the Low-k film based on the power curve indicating the relationship between the calculated input current value and the actually measured shrink rate (step S75). ) (Change rate conversion step), this process is terminated.

  According to the process of FIG. 7, the input current value that changes in the electron beam tube 15 and the case where the low-k film is irradiated with the electron beam from the single electron beam tube 15 and the heat treatment is performed on the low-k film by the heater. A power curve indicating the relationship with the measured value of the shrink rate is calculated, and the dose distribution when the electron beam is irradiated from the 19 electron beam tubes 15 calculated by the simulation shows the input current value and the dose amount. Since the ratio and the calculated power curve are converted into the distribution of the shrink rate of the low-k film, the shrink rate of the low-k film can be quantitatively predicted by simulation, and the simulation is performed. Can be used to equalize the shrink rate of the Low-k film. Accordingly, it is possible to eliminate the need to experimentally obtain the electron beam intensity for realizing the uniform shrink rate on the wafer W.

  In the substrate processing system 10, the uniformity of the shrink rate of the Low-k film on the wafer W may be calculated based on the distribution of the shrink rate of the Low-k film converted by the control device 12. The shrinkage rate can be made uniform quickly. Furthermore, the control device 12 may adjust the intensity of the electron beam emitted from each electron beam tube 15 based on the calculated uniformity of the shrink rate of the Low-k film. As a result, it is possible to quickly find out the intensity of the electron beam that realizes the uniformity of the shrink rate of the low-k film on the wafer W, so that the shrink rate of the low-k film can be made uniform quickly and easily. be able to.

  In the process of FIG. 7 described above, the distribution of the integrated value of the dose is converted into the distribution of the input current value. However, the distribution of the dose irradiated from one electron beam tube 15 and the center of the wafer W (electron beam) in advance. The distance from the center of the wafer W as shown in the graph of FIG. 9 using the ratio of the input current value and the dose amount in the graph of FIG. The integrated value of the input current value may be calculated at each point of the wafer W.

  Moreover, the process of FIG. 7 mentioned above can also be applied to a substrate processing system including a curing device having an electron beam irradiation mechanism in which electron beam tubes of different specifications are mixed. However, in this case, it is necessary to calculate a power curve indicating the relationship between the input current value and the actually measured shrinkage rate for each electron beam tube having a different specification.

  Furthermore, the process of FIG. 7 can also be applied to the calculation of the distribution of the shrink rate of the Low-k film (see FIG. 10) when the electron beam tube 15 fails in the electron beam irradiation mechanism 16. In this case, when calculating the integrated value of the dose amount at each point on the wafer W, the dose amount due to the electron beam irradiated from the failed electron beam tube 15 may not be added.

  In addition, the substrate on which the low-k film is modified in the substrate processing system 10 described above is not limited to a semiconductor wafer for electronic devices, but various substrates used for LCD (Liquid Crystal Display), FPD (Flat Panel Display), etc. It may be a photomask, a CD substrate, a printed circuit board, or the like.

  An object of the present invention is to supply a storage medium in which a program code of software for realizing the functions of the above-described embodiment is recorded to the control device 12, and the computer (or CPU, MPU, etc.) of the control device 12 stores the storage medium. It is also achieved by reading out and executing the program code stored in.

  In this case, the program code itself read from the storage medium realizes the functions of the above-described embodiment, and the program code and the storage medium storing the program code constitute the present invention. .

  Examples of the storage medium for supplying the program code include a floppy (registered trademark) disk, a hard disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, a DVD-RAM, and a DVD. An optical disc such as RW or DVD + RW, a magnetic tape, a nonvolatile memory card, a ROM, or the like can be used. Alternatively, the program code may be downloaded via a network.

  Further, by executing the program code read by the computer, not only the functions of the present embodiment are realized, but also an OS (operating system) running on the computer based on the instruction of the program code, etc. Includes a case where part or all of the actual processing is performed and the above-described functions of the present embodiment are realized by the processing.

  Furthermore, after the program code read from the storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the expanded function is based on the instruction of the program code. This includes a case where the CPU or the like provided on the expansion board or the expansion unit performs part or all of the actual processing, and the above-described functions of the present embodiment are realized by the processing.

  The form of the program code may include an object code, a program code executed by an interpreter, script data supplied to the OS, and the like.

  Next, examples of the present invention will be specifically described.

  First, in the substrate processing system 10 described above, a wafer W is mounted on the mounting table 14, and the electron beam is irradiated from the 19 electron beam tubes 15 in the electron beam irradiation mechanism 16 toward the low-k film 17 of the wafer W. , And the wafer W was heated by the heater of the mounting table 14 to measure the distribution of the shrink rate of the Low-k film when the Low-k film was modified (see FIG. 11A). .

  In the substrate processing system 10 described above, the distribution of the shrink rate of the Low-k film was calculated by simulation by executing the processing of FIG. 7 described above (see FIG. 11B).

  As a result of comparing the shrink rate distributions shown in FIGS. 11A and 11B, it was found that the actually measured shrink rate distribution and the shrink rate distribution calculated by the simulation almost coincide. That is, by converting the dose distribution by the electron beams from the plurality of electron beam tubes 15 calculated by the simulation into the shrink rate distribution based on the relationship between the input current value and the actually measured shrink rate, Low-k It was found that the shrink rate of the film can be predicted quantitatively.

It is a figure which shows schematic structure of the substrate processing system which concerns on embodiment of this invention. It is a figure which shows typically the electron beam irradiation to the Low-k film | membrane of a wafer from the electron beam tube in the substrate processing system of FIG. It is a graph which shows distribution of the shrink rate in the measured wafer. It is a graph which shows distribution of dose amount computed by simulation, and an actually measured shrink rate. It is a graph which shows the relationship between an input current value and the measured shrink rate. It is a graph which shows the distribution of the injection current value calculated by the distribution of the injection current value converted from the distribution of the measured shrink rate based on the relationship between the input current value and the measured shrink rate, and the simulation. It is a flowchart of the shrink rate prediction method of the Low-k film as a change rate prediction method according to the present embodiment. It is a figure which shows the calculation method of the integrated value of the dose amount in the point on a wafer. It is a figure which shows the relationship between input current value and the distance from the center of a wafer. It is a figure which shows distribution of the shrink rate of a Low-k film | membrane when the electron beam tube calculated by simulation fails. It is a figure which shows distribution of the shrink rate of a Low-k film when the modification of a Low-k film is performed, (A) is distribution of measured shrink rate, (B) performs the process of FIG. Then, the shrink rate distribution is calculated by simulation.

Explanation of symbols

W wafer 10 substrate processing system 11 curing device 12 control device 14 mounting table 15 electron beam tube 16 electron beam irradiation mechanism 17 low-k film 18 electron beam

Claims (8)

A substrate processing apparatus comprising: a plurality of electron beam irradiation units that irradiate a predetermined film formed on a substrate with an electron beam; and a processing unit that performs a predetermined process on the predetermined film. A change rate prediction method for predicting a change rate of a specification value of the predetermined film when the predetermined film is changed by irradiating a beam and performing the predetermined process,
Irradiating the predetermined film from the single electron beam irradiation unit while irradiating the electron beam to the predetermined film while changing a current value applied to the single electron beam irradiation unit, the predetermined processing is performed by the processing unit. A change rate measurement step of actually measuring the change rate of the specification value of the predetermined film when applied to
A relationship calculating step of calculating a relationship between the changing input current value and the actually measured change rate;
A charge current value related value step for calculating a related value of a charge current when the electron beam is irradiated from a plurality of the electron beam irradiation units;
A change rate prediction method comprising: a change rate conversion step of converting the calculated related value of the input current into a change rate of a specification value of the predetermined film based on the relationship.   2. The uniformity calculation step of calculating uniformity of the change rate of the specification value of the predetermined film on the substrate based on the converted change rate of the specification value of the predetermined film. Change rate prediction method.   The predetermined film is an interlayer insulating film, a change rate of a specification value of the predetermined film is a film thickness reduction ratio of the interlayer insulating film, and a related value of the input current is a dose amount in the substrate. The rate-of-change prediction method according to claim 1 or 2, characterized in that:   The change rate prediction method according to claim 1, wherein the processing unit is a heater, and the predetermined processing is heat treatment. A substrate processing apparatus comprising: a plurality of electron beam irradiation units that irradiate a predetermined film formed on a substrate with an electron beam; and a processing unit that performs a predetermined process on the predetermined film. A computer storing a program for causing a computer to execute a change rate prediction method for predicting a change rate of a specification value of the predetermined film when the predetermined film is changed by irradiating a beam and performing the predetermined process A readable storage medium, wherein the program is
Irradiating the predetermined film from the single electron beam irradiation unit while irradiating the electron beam to the predetermined film while changing a current value applied to the single electron beam irradiation unit, the predetermined processing is performed by the processing unit. A change rate measurement module that actually measures the change rate of the specification value of the predetermined film when applied to
A relationship calculation module for calculating a relationship between the changing input current value and the actually measured change rate;
A charge current value related value module for calculating a related value of a charge current when the electron beam is irradiated from a plurality of the electron beam irradiation units;
A storage medium comprising a change rate conversion module that converts the calculated related value of the input current into a change rate of a specification value of the predetermined film based on the relationship. A substrate processing apparatus having a plurality of electron beam irradiation units that irradiate a predetermined film formed on a substrate with an electron beam, and a processing unit that performs a predetermined process on the predetermined film, and a control device that controls the substrate processing apparatus A substrate processing system comprising:
The control device irradiates the predetermined film from the single electron beam irradiation unit while changing the input current value to the single electron beam irradiation unit, and performs the predetermined processing by the processing unit. The relationship between the measured value of the rate of change of the specification value of the predetermined film and the changing input current value when applying to the predetermined film is calculated from the plurality of electron beam irradiation units calculated by simulation. A substrate processing system, wherein a related value of an input current when the electron beam is irradiated is converted into a change rate of a specification value of the predetermined film based on the relationship.   7. The substrate according to claim 6, wherein the control device adjusts the intensity of the electron beam emitted from each of the electron beam irradiation units based on the converted rate of change of the specification value of the predetermined film. Processing system.   The control device calculates the uniformity of the change rate on the substrate based on the converted change rate of the specification value of the predetermined film, and further calculates each uniformity based on the calculated uniformity of the change rate. The substrate processing system according to claim 6, wherein the intensity of the electron beam irradiated from the electron beam irradiation unit is adjusted.

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