JP2007266081A5 - - Google Patents
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- Publication number
- JP2007266081A5 JP2007266081A5 JP2006085744A JP2006085744A JP2007266081A5 JP 2007266081 A5 JP2007266081 A5 JP 2007266081A5 JP 2006085744 A JP2006085744 A JP 2006085744A JP 2006085744 A JP2006085744 A JP 2006085744A JP 2007266081 A5 JP2007266081 A5 JP 2007266081A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- disposed
- deposited
- film
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000003860 storage Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229920001709 polysilazane Polymers 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006085744A JP5132068B2 (ja) | 2006-03-27 | 2006-03-27 | 半導体装置及びその製造方法 |
| KR1020060084012A KR100770820B1 (ko) | 2006-03-27 | 2006-09-01 | 반도체 장치 및 그 제조 방법 |
| US11/685,984 US7803721B2 (en) | 2006-03-27 | 2007-03-14 | Semiconductor device and method of manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006085744A JP5132068B2 (ja) | 2006-03-27 | 2006-03-27 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007266081A JP2007266081A (ja) | 2007-10-11 |
| JP2007266081A5 true JP2007266081A5 (https=) | 2007-11-22 |
| JP5132068B2 JP5132068B2 (ja) | 2013-01-30 |
Family
ID=38638817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006085744A Expired - Fee Related JP5132068B2 (ja) | 2006-03-27 | 2006-03-27 | 半導体装置及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7803721B2 (https=) |
| JP (1) | JP5132068B2 (https=) |
| KR (1) | KR100770820B1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008010537A (ja) * | 2006-06-28 | 2008-01-17 | Toshiba Corp | Ｎａｎｄ型不揮発性半導体記憶装置およびｎａｎｄ型不揮発性半導体記憶装置の製造方法 |
| JP2009076638A (ja) | 2007-09-20 | 2009-04-09 | Toshiba Corp | 半導体装置の製造方法 |
| KR20100027388A (ko) * | 2008-09-02 | 2010-03-11 | 삼성전자주식회사 | 반도체 소자의 절연막 및 그를 이용한 반도체 소자의 형성방법 |
| US8080463B2 (en) * | 2009-01-23 | 2011-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method and silicon oxide film forming method |
| US11600628B2 (en) * | 2020-01-15 | 2023-03-07 | Globalfoundries U.S. Inc. | Floating gate memory cell and memory array structure |
| US11222825B2 (en) * | 2020-03-10 | 2022-01-11 | Micron Technology, Inc. | Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2834667B2 (ja) * | 1994-03-25 | 1998-12-09 | 川崎製鉄株式会社 | 半導体装置の製造方法 |
| FR2734811B1 (fr) * | 1995-06-01 | 1997-07-04 | Saint Gobain Vitrage | Substrats transparents revetus d'un empilement de couches minces a proprietes de reflexion dans l'infrarouge et/ou dans le domaine du rayonnement solaire |
| KR100459691B1 (ko) * | 1998-01-05 | 2005-01-17 | 삼성전자주식회사 | 반도체 장치의 트랜치 소자 분리 방법 |
| KR100281192B1 (ko) * | 1999-03-04 | 2001-01-15 | 황인길 | 반도체 소자 분리를 위한 얕은 트렌치 제조 방법 |
| TW444252B (en) * | 1999-03-19 | 2001-07-01 | Toshiba Corp | Semiconductor apparatus and its fabricating method |
| US6492283B2 (en) * | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
| US6358785B1 (en) * | 2000-06-06 | 2002-03-19 | Lucent Technologies, Inc. | Method for forming shallow trench isolation structures |
| US6635565B2 (en) * | 2001-02-20 | 2003-10-21 | United Microelectronics Corp. | Method of cleaning a dual damascene structure |
| KR20030000436A (ko) * | 2001-06-25 | 2003-01-06 | 주식회사 하이닉스반도체 | 반도체 소자의 격리막 제조방법 |
| JP3586268B2 (ja) * | 2002-07-09 | 2004-11-10 | 株式会社東芝 | 半導体装置及びその製造方法 |
| KR20040008874A (ko) * | 2002-07-19 | 2004-01-31 | 삼성전자주식회사 | 반도체 장치의 소자 분리 방법 |
| JP2005166700A (ja) * | 2003-11-28 | 2005-06-23 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2005175277A (ja) | 2003-12-12 | 2005-06-30 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP2005243709A (ja) | 2004-02-24 | 2005-09-08 | Toshiba Corp | 半導体装置およびその製造方法 |
| US7524735B1 (en) * | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
| JP2005332885A (ja) * | 2004-05-18 | 2005-12-02 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JP4594648B2 (ja) * | 2004-05-26 | 2010-12-08 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US7332408B2 (en) * | 2004-06-28 | 2008-02-19 | Micron Technology, Inc. | Isolation trenches for memory devices |
| US7521378B2 (en) * | 2004-07-01 | 2009-04-21 | Micron Technology, Inc. | Low temperature process for polysilazane oxidation/densification |
| US7361958B2 (en) * | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
| JP4329740B2 (ja) * | 2004-10-22 | 2009-09-09 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法、及び有機エレクトロルミネッセンス装置 |
| US7837838B2 (en) * | 2006-03-09 | 2010-11-23 | Applied Materials, Inc. | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
| JP2009076638A (ja) * | 2007-09-20 | 2009-04-09 | Toshiba Corp | 半導体装置の製造方法 |
-
2006
- 2006-03-27 JP JP2006085744A patent/JP5132068B2/ja not_active Expired - Fee Related
- 2006-09-01 KR KR1020060084012A patent/KR100770820B1/ko not_active Expired - Fee Related
-
2007
- 2007-03-14 US US11/685,984 patent/US7803721B2/en not_active Expired - Fee Related
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