JP2007250869A - ピエゾ抵抗素子及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 4
- 229910052796 boron Inorganic materials 0.000 claims 4
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000005685 electric field effect Effects 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 60
- 230000001133 acceleration Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D17/00—Excavations; Bordering of excavations; Making embankments
- E02D17/02—Foundation pits
- E02D17/04—Bordering surfacing or stiffening the sides of foundation pits
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D17/00—Excavations; Bordering of excavations; Making embankments
- E02D17/06—Foundation trenches ditches or narrow shafts
- E02D17/08—Bordering or stiffening the sides of ditches trenches or narrow shafts for foundations
- E02D17/083—Shoring struts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D2200/00—Geometrical or physical properties
- E02D2200/11—Height being adjustable
- E02D2200/115—Height being adjustable with separate pieces
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D2200/00—Geometrical or physical properties
- E02D2200/16—Shapes
- E02D2200/1671—Shapes helical or spiral
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D2600/00—Miscellaneous
- E02D2600/20—Miscellaneous comprising details of connection between elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
- G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Civil Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Pressure Sensors (AREA)
Abstract
【解決手段】ピエゾ抵抗素子を製造する方法において、半導体基板に溝を形成する工程と;溝の内部に半導体基板と異なる導電型の抵抗層を形成する工程と;抵抗層の上部に半導体基板と同じ導電型のシリコン層を形成する工程とを含むことを特徴とする。また、本発明の第2の態様に係るピエゾ抵抗素子は、半導体基板内に形成された一対のコンタクト領域と;半導体基板と異なる導電型であり、半導体基板の一対のコンタクト領域の間に形成された溝の内部に形成された抵抗層と;半導体基板と同じ導電型であり、抵抗層の上に形成されたシリコン層とを備えたこと特徴とする。
【選択図】図10
Description
Electrical Mechanical System)、欧州ではMIST(Micro System Technology)と呼ばれている。
(1)拡散法あるいはイオン注入法によって半導体基板に不純物を添加することにより、基板の表面に抵抗層を形成する。
(2)半導体基板表面に不純物拡散層を形成した後、その上に反対の導電型の不純物拡散層をさらに形成することにより、半導体基板内部に埋め込み抵抗層を形成する。
(3)特開平7−131035号公報に示されているように、半導体基板(例えば、n型)に、その基板表面層の導電型を残したままの状態で、当該半導体基板とは異なる導電型(例えば、p型)のドーパントを高エネルギー(例えば、1MeV)でイオン注入することによって、基板内部に埋め込み抵抗層を形成する。
Reliability 1 (2001) 1657-1662 又は、Sensors and Actuators A110 (2004) 150-156 に説明されている。
ここで、埋め込み層124a(シリコン膜124)の導電型は、SOI層106と同じn型とする。なお、SOI層106の導電型がp型の場合には、埋め込み層124aについてもp型とする。
12 ビーム
14 錘
18 ピエゾ抵抗素子
106 SOI層
110 コンタクト領域
114 溝
120 抵抗層
124a 多結晶膜
130 アルミ配線
Claims (17)
- ピエゾ抵抗素子を製造する方法において、
半導体基板に溝を形成する工程と;
前記溝の内部に前記半導体基板と異なる導電型の抵抗層を形成する工程と;
前記抵抗層の上部に前記半導体基板と同じ導電型のシリコン層を形成する工程とを含むことを特徴とするピエゾ抵抗素子の製造方法。 - 前記シリコン層は、多結晶シリコン層であることを特徴とする請求項1に記載の方法。
- 前記抵抗層は、ボロンイオン注入による埋め込み不純物拡散層であることを特徴とする請求項1又は2に記載の方法。
- 前記溝は、ウェットエッチングにより形成されることを特徴とする請求項1,2又は3に記載の方法。
- 前記溝を形成する前に、コンタクトホール形成領域に対応する位置にイオン注入を行って一対のコンタクト領域を形成し、
前記一対のコンタクト領域の間に前記溝を形成することを特徴とする請求項1,2,3又は4に記載の方法。 - ピエゾ抵抗素子を有する半導体装置の製造方法において、
前記ピエゾ抵抗素子を形成するにあたり、
半導体基板上のコンタクトホール形成領域に対応する位置にイオン注入を行って一対のコンタクト領域を形成し;
前記半導体基板の前記一対のコンタクト領域の間に溝を形成し;
前記溝の内部に前記半導体基板と異なる導電型の抵抗層を形成し;
前記抵抗層の上部に前記半導体基板と同じ導電型のシリコン層を形成し;
前記一対のコンタクト領域に配線を施すことを特徴とする半導体装置の製造方法。 - 前記シリコン層は、多結晶シリコン層であることを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記抵抗層は、ボロンイオン注入による埋め込み不純物拡散層であることを特徴とする請求項6又は7に記載の半導体装置の製造方法。
- 前記溝は、ウェットエッチングにより形成されることを特徴とする請求項6,7又は8に記載の半導体装置の製造方法。
- 半導体基板内に形成されるピエゾ抵抗素子において、
前記半導体基板内に形成された一対のコンタクト領域と;
前記半導体基板と異なる導電型であり、前記半導体基板の前記一対のコンタクト領域の間に形成された溝の内部に形成された抵抗層と;
前記半導体基板と同じ導電型であり、前記抵抗層の上に形成されたシリコン層とを備えたこと特徴とするピエゾ抵抗素子。 - 前記シリコン層は、多結晶シリコン層であることを特徴とする請求項10に記載のピエゾ抵抗素子。
- 前記抵抗層は、ボロンイオン注入による埋め込み不純物拡散層であることを特徴とする請求項10又は11に記載のピエゾ抵抗素子。
- 前記溝は、結晶ウェットエッチングにより形成されることを特徴とする請求項10,11又は12に記載のピエゾ抵抗素子。
- ピエゾ抵抗素子を有する半導体装置において、
前記ピエゾ抵抗素子は、
半導体基板内に形成された一対のコンタクト領域と;
前記半導体基板と異なる導電型であり、前記半導体基板の前記一対のコンタクト領域の間に形成された溝の内部に形成された抵抗層と;
前記半導体基板と同じ導電型であり、前記抵抗層の上に形成されたシリコン層とを備えていること特徴とする半導体装置。 - 前記シリコン層は、多結晶シリコン層であることを特徴とする請求項14に記載の半導体装置。
- 前記抵抗層は、ボロンイオン注入による埋め込み不純物拡散層であることを特徴とする請求項14又は15に記載の半導体装置。
- 前記溝は、ウェットエッチングにより形成されることを特徴とする請求項14,15又は16に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006072750A JP4897318B2 (ja) | 2006-03-16 | 2006-03-16 | ピエゾ抵抗素子及びその製造方法 |
US11/649,217 US20070215966A1 (en) | 2006-03-16 | 2007-01-04 | Piezoresistance element and semiconductor device having the same |
KR1020070004931A KR20070094453A (ko) | 2006-03-16 | 2007-01-16 | 피에조 저항 소자 및 그 제조 방법 |
CNA2007100042841A CN101038864A (zh) | 2006-03-16 | 2007-01-19 | 压电电阻元件及其制造方法 |
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JP2006072750A JP4897318B2 (ja) | 2006-03-16 | 2006-03-16 | ピエゾ抵抗素子及びその製造方法 |
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JP2007250869A true JP2007250869A (ja) | 2007-09-27 |
JP4897318B2 JP4897318B2 (ja) | 2012-03-14 |
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JP2006072750A Active JP4897318B2 (ja) | 2006-03-16 | 2006-03-16 | ピエゾ抵抗素子及びその製造方法 |
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US (1) | US20070215966A1 (ja) |
JP (1) | JP4897318B2 (ja) |
KR (1) | KR20070094453A (ja) |
CN (1) | CN101038864A (ja) |
Cited By (1)
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JP2019158576A (ja) * | 2018-03-13 | 2019-09-19 | アズビル株式会社 | ピエゾ抵抗型センサ |
Families Citing this family (5)
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JP4610447B2 (ja) * | 2005-08-31 | 2011-01-12 | Okiセミコンダクタ株式会社 | 半導体装置とその製造方法及び検査方法 |
EP2275825A1 (en) * | 2009-07-10 | 2011-01-19 | Yamaha Corporation | Uniaxial acceleration sensor |
DE102010012607B4 (de) * | 2010-03-24 | 2012-01-26 | Eads Deutschland Gmbh | HF-MEMS-Schalter |
JP2018077201A (ja) * | 2016-11-11 | 2018-05-17 | ソニーセミコンダクタソリューションズ株式会社 | センサ素子、慣性センサ及び電子機器 |
US11764111B2 (en) * | 2019-10-24 | 2023-09-19 | Texas Instruments Incorporated | Reducing cross-wafer variability for minimum width resistors |
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JP2006030158A (ja) * | 2004-06-15 | 2006-02-02 | Canon Inc | 半導体装置およびその製造方法 |
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US6892582B1 (en) * | 1999-08-20 | 2005-05-17 | Hitachi, Ltd. | Semiconductor pressure sensor and pressure sensing device |
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2006
- 2006-03-16 JP JP2006072750A patent/JP4897318B2/ja active Active
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2007
- 2007-01-04 US US11/649,217 patent/US20070215966A1/en not_active Abandoned
- 2007-01-16 KR KR1020070004931A patent/KR20070094453A/ko not_active Application Discontinuation
- 2007-01-19 CN CNA2007100042841A patent/CN101038864A/zh active Pending
Patent Citations (6)
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JPH07162017A (ja) * | 1993-12-08 | 1995-06-23 | Nec Corp | 半導体加速度センサの製造方法 |
JP2002289875A (ja) * | 2001-12-25 | 2002-10-04 | Denso Corp | 半導体力学量センサ及びその製造方法 |
JP2005181232A (ja) * | 2003-12-24 | 2005-07-07 | Citizen Watch Co Ltd | 電気機械変換器とその製造方法 |
JP2005283393A (ja) * | 2004-03-30 | 2005-10-13 | Fujitsu Media Device Kk | 慣性センサ |
JP2005345294A (ja) * | 2004-06-03 | 2005-12-15 | Oki Electric Ind Co Ltd | 加速度センサ及びその製造方法 |
JP2006030158A (ja) * | 2004-06-15 | 2006-02-02 | Canon Inc | 半導体装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019158576A (ja) * | 2018-03-13 | 2019-09-19 | アズビル株式会社 | ピエゾ抵抗型センサ |
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KR20070094453A (ko) | 2007-09-20 |
JP4897318B2 (ja) | 2012-03-14 |
US20070215966A1 (en) | 2007-09-20 |
CN101038864A (zh) | 2007-09-19 |
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