JP2007235139A - 二つの酸化層を利用した不揮発性メモリ素子 - Google Patents
二つの酸化層を利用した不揮発性メモリ素子 Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 17
- 230000003647 oxidation Effects 0.000 claims abstract description 3
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 9
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- -1 or an oxide thereof Inorganic materials 0.000 description 9
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910003087 TiOx Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- B60Q5/00—Arrangement or adaptation of acoustic signal devices
- B60Q5/001—Switches therefor
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- B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
- B62D—MOTOR VEHICLES; TRAILERS
- B62D31/00—Superstructures for passenger vehicles
- B62D31/02—Superstructures for passenger vehicles for carrying large numbers of passengers, e.g. omnibus
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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Abstract
【解決手段】可変抵抗物質を含む不揮発性メモリ素子において、下部電極と、下部電極上に酸化状態の変化可能な酸化物から形成された形成された第1酸化層と、第1酸化層上に形成された第2酸化層と、第2酸化層上に形成された上部電極と、を備える二つの酸化層を利用した不揮発性メモリ素子である。
【選択図】図2
Description
12、21 下部電極
14 酸化層
16、24 上部電極
22 第1酸化層
23 第2酸化層
Claims (9)
- 可変抵抗物質を含む不揮発性メモリ素子において、
下部電極と、
前記下部電極上に酸化状態の変化可能な酸化物から形成された第1酸化層と、
前記第1酸化層上に形成された第2酸化層と、
前記第2酸化層上に形成された上部電極と、を備えることを特徴とする二つの酸化層を利用した不揮発性メモリ素子。 - 前記下部電極は、前記第1酸化層とショットキーコンタクトを行う金属または金属酸化物から形成されたことを特徴とする請求項1に記載の二つの酸化層を利用した不揮発性メモリ素子。
- 前記第1酸化層は、遷移金属酸化物から形成されたことを特徴とする請求項1に記載の二つの酸化層を利用した不揮発性メモリ素子。
- 前記遷移金属酸化物は、NiO、CeO2、VO2、V2O5、Nb2、Nb2O5、TiO2、Ti2O3、WO3、Ta2O5、またはZrO2から形成されたことを特徴とする請求項3に記載の二つの酸化層を利用した不揮発性メモリ素子。
- 前記第2酸化層は、非晶質酸化物から形成されたことを特徴とする請求項1に記載の二つの酸化層を利用した不揮発性メモリ素子。
- 前記非晶質酸化物は、IZOまたはITOであることを特徴とする請求項5に記載の二つの酸化層を利用した不揮発性メモリ素子。
- 前記下部電極は、Pt、Ru、Irまたはこれらの酸化物から形成されたことを特徴とする請求項2に記載の二つの酸化層を備える不揮発性メモリ素子。
- 前記下部電極は、TiまたはAgから形成されたことを特徴とする請求項2に記載の二つの酸化層を備える不揮発性メモリ素子。
- 前記上部電極は、Pt、Ru、Irまたはこれらの酸化物から形成されたことを特徴とする請求項3に記載の二つの酸化層を備える不揮発性メモリ素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060018879A KR100718155B1 (ko) | 2006-02-27 | 2006-02-27 | 두 개의 산화층을 이용한 비휘발성 메모리 소자 |
KR10-2006-0018879 | 2006-02-27 |
Publications (2)
Publication Number | Publication Date |
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JP2007235139A true JP2007235139A (ja) | 2007-09-13 |
JP4938493B2 JP4938493B2 (ja) | 2012-05-23 |
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JP2007045884A Active JP4938493B2 (ja) | 2006-02-27 | 2007-02-26 | 二つの酸化層を利用した不揮発性メモリ素子 |
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Country | Link |
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US (1) | US7417271B2 (ja) |
JP (1) | JP4938493B2 (ja) |
KR (1) | KR100718155B1 (ja) |
CN (1) | CN101030623B (ja) |
Cited By (15)
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JP2008016854A (ja) * | 2006-07-06 | 2008-01-24 | Samsung Electronics Co Ltd | 可変抵抗物質を含む不揮発性メモリ素子 |
WO2008047770A1 (fr) * | 2006-10-16 | 2008-04-24 | Fujitsu Limited | Élément variable en résistance |
JP2009260167A (ja) * | 2008-04-21 | 2009-11-05 | Fujitsu Ltd | スイッチング素子 |
JP2010147133A (ja) * | 2008-12-17 | 2010-07-01 | Nec Corp | 不揮発性記憶装置 |
US7764160B2 (en) | 2006-09-28 | 2010-07-27 | Fujitsu Limited | Variable-resistance element |
WO2010095296A1 (ja) * | 2009-02-20 | 2010-08-26 | 株式会社村田製作所 | 抵抗記憶素子およびその使用方法 |
WO2010095295A1 (ja) * | 2009-02-20 | 2010-08-26 | 株式会社村田製作所 | 抵抗記憶素子およびその使用方法 |
US7965539B2 (en) | 2007-09-28 | 2011-06-21 | Panasonic Corporation | Nonvolatile memory element, nonvolatile semiconductor memory apparatus, and reading method and writing method therefor |
JP2011199278A (ja) * | 2010-03-23 | 2011-10-06 | Internatl Business Mach Corp <Ibm> | 高密度メモリ素子 |
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JP4938493B2 (ja) | 2012-05-23 |
US20070200158A1 (en) | 2007-08-30 |
CN101030623A (zh) | 2007-09-05 |
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