JP2007165888A - 電子素子内蔵印刷回路基板及びその製造方法 - Google Patents
電子素子内蔵印刷回路基板及びその製造方法 Download PDFInfo
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- JP2007165888A JP2007165888A JP2006332078A JP2006332078A JP2007165888A JP 2007165888 A JP2007165888 A JP 2007165888A JP 2006332078 A JP2006332078 A JP 2006332078A JP 2006332078 A JP2006332078 A JP 2006332078A JP 2007165888 A JP2007165888 A JP 2007165888A
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- insulating layer
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- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10431—Details of mounted components
- H05K2201/10507—Involving several components
- H05K2201/10515—Stacked components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4608—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated comprising an electrically conductive base or core
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
Abstract
【解決手段】電子素子内蔵印刷回路基板及びその製造方法が開示される。電子素子内蔵印刷回路基板は、コアシートと、コアシートの一面に実装される第1電子素子と、コアシートの他面に実装されて第1電子素子とオーバーラップされる第2電子素子と、コアシートの一面に第1電子素子をカバーしながら積層される第1絶縁層と、コアシートの他面に第2電子素子をカバーしながら積層される第2絶縁層と、第1絶縁層または第2絶縁層の表面に形成される回路パターンとを含む。
【選択図】図2
Description
12:コアホール
20:第1電子素子
30:第2電子素子
22、32:チップ接着剤(Chip Adhesives)
40:第1絶縁層
42:IVH
50:第2絶縁層
60:回路パターン
62:BVH
70:外層回路
Claims (29)
- コアシートと、
前記コアシートの一面に実装される第1電子素子と、
前記コアシートの他面に実装されて、前記第1電子素子とオーバーラップされる第2電子素子と、
前記コアシートの一面に前記第1電子素子をカバーしながら積層される第1絶縁層と、
前記コアシートの他面に前記第2電子素子をカバーしながら積層される第2絶縁層と、
前記第1絶縁層または前記第2絶縁層の表面に形成される回路パターンと、を含む電子素子内蔵印刷回路基板。 - 前記コアシートは、メタル基板である請求項1に記載の電子素子内蔵印刷回路基板。
- 前記メタル基板は、アルミニウム(Al)または銅(Cu)またはステンレススチール(SS)を含む請求項2に記載の電子素子内蔵印刷回路基板。
- 前記コアシートは、銅箔積層板(CCL)である請求項1に記載の電子素子内蔵印刷回路基板。
- 前記第1電子素子と前記第2電子素子はその大きさ及び形態が同一である請求項1に記載の電子素子内蔵印刷回路基板。
- 前記第1電子素子と前記第2電子素子は、前記コアシートを基準として互いに対称されるように実装される請求項1に記載の電子素子内蔵印刷回路基板。
- 前記第1電子素子または前記第2電子素子は、チップ接着剤(Chip Adhesives)を介在して前記コアシートに実装される請求項1に記載の電子素子内蔵印刷回路基板。
- 前記第1絶縁層または前記第2絶縁層は、プリプレグ(PPG)、RCC(rubber coated copper)、ABF(Ajinomoto Build-up Film)の中の一つ以上を含む請求項1に記載の電子素子内蔵印刷回路基板。
- 前記第1絶縁層、前記第2絶縁層及び前記コアシートを貫くIVH(interstitial via hole)をさらに含むが、前記コアシートには前記IVHが貫通されるように前記IVHより大きい断面を有するコアホールが形成される請求項1に記載の電子素子内蔵印刷回路基板。
- 前記IVHの内周面には、金属層が形成され、前記金属層は前記回路パターンと電気的に繋がれる請求項9に記載の電子素子内蔵印刷回路基板。
- (a)コアシートの一面に第1電子素子を実装する段階と、
(b)前記コアシートの一面に前記第1電子素子をカバーしながら第1絶縁層を積層する段階と、
(c)前記コアシートの他面に前記第1電子素子とオーバーラップされるように第2電子素子を実装する段階と、
(d)前記コアシートの他面に前記第2電子素子をカバーしながら第2絶縁層を積層する段階と、
(e)前記第1絶縁層または前記第2絶縁層の表面に回路パターンを形成する段階と、を含む電子素子内蔵印刷回路基板の製造方法。 - (a)コアシートの一面に第1電子素子を実装し、前記コアシートの他面に前記第1電子素子とオーバーラップされるように第2電子素子を実装する段階と、
(b)前記コアシートの一面に前記第1電子素子をカバーしながら第1絶縁層を積層し、前記コアシートの他面に前記第2電子素子をカバーしながら第2絶縁層を積層する段階と、
(c)前記第1絶縁層または前記第2絶縁層の表面に回路パターンを形成する段階を含む電子素子内蔵印刷回路基板の製造方法。 - 前記段階(b)と前記段階(c)の間に、前記コアシートの他面の向き方向が前記コアシートの一面の向き方向に転換されるように前記コアシートをフリップ(flip)する段階をさらに含む請求項11に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記コアシートはメタル基板である請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記メタル基板は、アルミニウム(Al)または銅(Cu)またはステンレススチール(SS)を含む請求項14に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記コアシートは、銅箔積層板(CCL)である請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記第1電子素子と前記第2電子素子は、大きさ及び形態が同一である請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記第1電子素子と前記第2電子素子は、前記コアシートを基準として互いに対称されるように実装される請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記第1電子素子または前記第2電子素子は、チップ接着剤(Chip Adhesives)を介在して前記コアシートに実装される請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記第1絶縁層または前記第2絶縁層は、プリプレグ(PPG)またはABFであり、前記回路パターンは、前記第1絶縁層または前記第2絶縁層の表面に銅箔層を積層して形成される請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記第1絶縁層及び前記第2絶縁層はRCCである請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記段階(d)の以前に、前記コアシートの一部を穿孔してコアホールを形成する段階をさらに含み、前記段階(d)の以後に前記第1絶縁層、前記第2絶縁層及び前記コアシートを貫くIVHを形成する段階をさらに含む請求項11に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記段階(b)の以前に、前記コアシートの一部を穿孔してコアホールを形成する段階をさらに含み、前記段階(b)の以後に前記第1絶縁層、前記第2絶縁層及び前記コアシートを貫くIVHを形成する段階をさらに含む請求項12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記コアホールは、前記IVHが貫通されるように前記IVHより大きい断面を有する請求項22または23に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記IVHの内周面には金属層が形成され、前記金属層は前記回路パターンと電気的に繋がれる請求項24に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記段階(d)の以後に前記第1電子素子の電極の位置に対応して前記第1絶縁層に第1のBVH(Blind via hole)を形成し、前記第2電子素子の電極の位置に対応して前記第2絶縁層に第2のBVHを形成する段階をさらに含む請求項11に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記段階(b)の以後に前記第1電子素子の電極の位置に対応して前記第1絶縁層に第1のBVH(Blind via hole)を形成し、前記第2電子素子の電極の位置に対応して前記第2絶縁層に第2のBVHを形成する段階をさらに含む請求項12に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記第1のBVH及び前記第2のBVHの表面にメッキ層が形成される請求項26または27に記載の電子素子内蔵印刷回路基板の製造方法。
- 前記回路パターンに絶縁層及び銅箔層をさらに積層し、前記銅箔層に外層回路を形成することをさらに含む請求項11または12に記載の電子素子内蔵印刷回路基板の製造方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010524213A (ja) * | 2007-03-30 | 2010-07-15 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 電子アッセンブリーの製造方法並びに電子アッセンブリー |
KR20150087682A (ko) * | 2014-01-22 | 2015-07-30 | 엘지이노텍 주식회사 | 임베디드 인쇄회로기판 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004038526A2 (en) | 2002-10-22 | 2004-05-06 | Isys Technologies | Non-peripherals processing control module having improved heat dissipating properties |
KR101197513B1 (ko) | 2002-10-22 | 2012-11-09 | 제이슨 에이. 설리반 | 동적 모듈식 처리 유닛을 제공하기 위한 시스템 및 방법 |
CA2504222C (en) | 2002-10-22 | 2012-05-22 | Jason A. Sullivan | Robust customizable computer processing system |
KR100704919B1 (ko) * | 2005-10-14 | 2007-04-09 | 삼성전기주식회사 | 코어층이 없는 기판 및 그 제조 방법 |
WO2008026335A1 (en) * | 2006-09-01 | 2008-03-06 | Murata Manufacturing Co., Ltd. | Electronic part device and method of manufacturing it and electronic part assembly and method of manufacturing it |
KR20080076241A (ko) * | 2007-02-15 | 2008-08-20 | 삼성전기주식회사 | 전자소자 내장 인쇄회로기판 및 그 제조방법 |
KR100858032B1 (ko) | 2007-02-27 | 2008-09-10 | 대덕전자 주식회사 | 능동 소자 내장형 인쇄회로기판 및 제조 방법 |
CN101296566B (zh) * | 2007-04-29 | 2011-06-22 | 鸿富锦精密工业(深圳)有限公司 | 电气元件载板及其制造方法 |
KR100996914B1 (ko) * | 2008-06-19 | 2010-11-26 | 삼성전기주식회사 | 칩 내장 인쇄회로기판 및 그 제조방법 |
DE102008040488A1 (de) * | 2008-07-17 | 2010-01-21 | Robert Bosch Gmbh | Elektronische Baueinheit und Verfahren zu deren Herstellung |
US8390083B2 (en) | 2009-09-04 | 2013-03-05 | Analog Devices, Inc. | System with recessed sensing or processing elements |
US20110067910A1 (en) * | 2009-09-18 | 2011-03-24 | International Business Machines Corporation | Component securing system and associated method |
TWI392405B (zh) * | 2009-10-26 | 2013-04-01 | Unimicron Technology Corp | 線路結構 |
KR101119303B1 (ko) * | 2010-01-06 | 2012-03-20 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
CN102208292A (zh) * | 2010-03-30 | 2011-10-05 | 深圳富泰宏精密工业有限公司 | 便携式电子装置按键结构 |
US20110253439A1 (en) * | 2010-04-20 | 2011-10-20 | Subtron Technology Co. Ltd. | Circuit substrate and manufacturing method thereof |
US20120002455A1 (en) * | 2010-06-07 | 2012-01-05 | Sullivan Jason A | Miniturization techniques, systems, and apparatus relatng to power supplies, memory, interconnections, and leds |
WO2012051340A1 (en) | 2010-10-12 | 2012-04-19 | Analog Devices, Inc. | Microphone package with embedded asic |
US9324673B2 (en) * | 2011-06-23 | 2016-04-26 | Stats Chippac Ltd. | Integrated circuit packaging system with wafer level reconfiguration and method of manufacture thereof |
KR20130014122A (ko) * | 2011-07-29 | 2013-02-07 | 삼성전기주식회사 | 전자 소자 내장 인쇄회로기판 및 그 제조방법 |
JP2013182076A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | 映像表示装置および発光装置 |
US9704780B2 (en) | 2012-12-11 | 2017-07-11 | STATS ChipPAC, Pte. Ltd. | Semiconductor device and method of forming low profile fan-out package with vertical interconnection units |
US9161454B2 (en) * | 2012-12-24 | 2015-10-13 | Unimicron Technology Corp. | Electrical device package structure and method of fabricating the same |
TWI491017B (zh) * | 2013-04-25 | 2015-07-01 | 矽品精密工業股份有限公司 | 半導體封裝件及其製法 |
JP6103054B2 (ja) * | 2013-06-18 | 2017-03-29 | 株式会社村田製作所 | 樹脂多層基板の製造方法 |
US9847462B2 (en) | 2013-10-29 | 2017-12-19 | Point Engineering Co., Ltd. | Array substrate for mounting chip and method for manufacturing the same |
CN104684269B (zh) * | 2013-12-03 | 2017-09-05 | 旭景科技股份有限公司 | 具有嵌入式电子元件的印刷电路板及其制造方法 |
CN104409423B (zh) * | 2014-10-15 | 2017-06-30 | 香港应用科技研究院有限公司 | 具有提供多层压缩力的防分层结构的塑封器件 |
US10170403B2 (en) * | 2014-12-17 | 2019-01-01 | Kinsus Interconnect Technology Corp. | Ameliorated compound carrier board structure of flip-chip chip-scale package |
CN107431850B (zh) | 2015-03-23 | 2019-11-22 | 美商楼氏电子有限公司 | 微机电系统麦克风 |
CN104810332A (zh) * | 2015-05-05 | 2015-07-29 | 三星半导体(中国)研究开发有限公司 | 一种扇出晶圆级封装件及其制造方法 |
US9666558B2 (en) | 2015-06-29 | 2017-05-30 | Point Engineering Co., Ltd. | Substrate for mounting a chip and chip package using the substrate |
CN105578762B (zh) * | 2016-02-25 | 2019-02-12 | Oppo广东移动通信有限公司 | 一种软硬结合板和移动终端 |
EP3433286A1 (en) | 2016-03-24 | 2019-01-30 | Celanese International Corporation | Aqueous cross-linkable polymer dispersions |
EP3792960A3 (en) * | 2016-04-11 | 2021-06-02 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Batch manufacture of component carriers |
JP6612723B2 (ja) * | 2016-12-07 | 2019-11-27 | 株式会社東芝 | 基板装置 |
JP7247046B2 (ja) * | 2019-07-29 | 2023-03-28 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01175297A (ja) | 1987-12-28 | 1989-07-11 | Toshiba Corp | 多層印刷配線板装置 |
US5099309A (en) * | 1990-04-30 | 1992-03-24 | International Business Machines Corporation | Three-dimensional memory card structure with internal direct chip attachment |
JPH0823149A (ja) | 1994-05-06 | 1996-01-23 | Seiko Epson Corp | 半導体装置及びその製造方法 |
US5567657A (en) * | 1995-12-04 | 1996-10-22 | General Electric Company | Fabrication and structures of two-sided molded circuit modules with flexible interconnect layers |
US5801072A (en) * | 1996-03-14 | 1998-09-01 | Lsi Logic Corporation | Method of packaging integrated circuits |
JP3420748B2 (ja) * | 2000-12-14 | 2003-06-30 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
KR100391094B1 (ko) * | 2001-02-22 | 2003-07-12 | 삼성전자주식회사 | 듀얼 다이 패키지와 그 제조 방법 |
US20020175402A1 (en) * | 2001-05-23 | 2002-11-28 | Mccormack Mark Thomas | Structure and method of embedding components in multi-layer substrates |
JP3733419B2 (ja) | 2001-07-17 | 2006-01-11 | 日立エーアイシー株式会社 | 電子部品内蔵型多層基板とその製造方法及びそれに使用するメタルコア基板 |
TW550997B (en) * | 2001-10-18 | 2003-09-01 | Matsushita Electric Ind Co Ltd | Module with built-in components and the manufacturing method thereof |
US6709897B2 (en) | 2002-01-15 | 2004-03-23 | Unimicron Technology Corp. | Method of forming IC package having upward-facing chip cavity |
JP2003249763A (ja) * | 2002-02-25 | 2003-09-05 | Fujitsu Ltd | 多層配線基板及びその製造方法 |
US20050005504A1 (en) | 2003-06-30 | 2005-01-13 | Munagavalasa Murthy S. | Volatile insect control sheet and method of manufacture thereof |
JP4114629B2 (ja) | 2004-04-23 | 2008-07-09 | 松下電工株式会社 | 部品内蔵回路板及びその製造方法 |
JP4339739B2 (ja) * | 2004-04-26 | 2009-10-07 | 太陽誘電株式会社 | 部品内蔵型多層基板 |
KR100619367B1 (ko) * | 2004-08-26 | 2006-09-08 | 삼성전기주식회사 | 고유전율을 갖는 커패시터를 내장한 인쇄회로기판 및 그제조 방법 |
US7504706B2 (en) * | 2005-10-21 | 2009-03-17 | E. I. Du Pont De Nemours | Packaging having an array of embedded capacitors for power delivery and decoupling in the mid-frequency range and methods of forming thereof |
-
2005
- 2005-12-13 KR KR1020050122289A patent/KR100656751B1/ko not_active IP Right Cessation
-
2006
- 2006-12-06 DE DE102006057542A patent/DE102006057542A1/de not_active Ceased
- 2006-12-08 JP JP2006332078A patent/JP2007165888A/ja active Pending
- 2006-12-12 CN CN2006101672694A patent/CN1984533B/zh not_active Expired - Fee Related
- 2006-12-13 US US11/637,664 patent/US7697301B2/en not_active Expired - Fee Related
-
2010
- 2010-02-16 US US12/656,781 patent/US20100154210A1/en not_active Abandoned
-
2012
- 2012-09-14 US US13/617,694 patent/US20130042472A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010524213A (ja) * | 2007-03-30 | 2010-07-15 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 電子アッセンブリーの製造方法並びに電子アッセンブリー |
KR20150087682A (ko) * | 2014-01-22 | 2015-07-30 | 엘지이노텍 주식회사 | 임베디드 인쇄회로기판 |
KR102237778B1 (ko) * | 2014-01-22 | 2021-04-09 | 엘지이노텍 주식회사 | 임베디드 인쇄회로기판 |
Also Published As
Publication number | Publication date |
---|---|
US7697301B2 (en) | 2010-04-13 |
DE102006057542A1 (de) | 2007-07-05 |
US20130042472A1 (en) | 2013-02-21 |
US20100154210A1 (en) | 2010-06-24 |
KR100656751B1 (ko) | 2006-12-13 |
CN1984533A (zh) | 2007-06-20 |
CN1984533B (zh) | 2011-09-21 |
US20070132536A1 (en) | 2007-06-14 |
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