JP2007114040A - Probing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probing device having a probe which is easy to handle, when it is processed or replaced. <P>SOLUTION: The probe 1 of the probing device consists of a cylindrical holding part 3, made of a second electrically conductive material and a probe member 2 which is provided at nearly the central part of one end face of the holding part 3 and has a sharp-pointed shape, consisting of a conical part and a cylindrical part which are made of a first electrically conductive material. The diameter of the probe member 2 is set to be not larger than 100 μm, the diameter of the holding part 3 is set to be not smaller than 100 μm, and the relation between the length L of the probe member 2 and the diameter R of the holding part 3 is set to be L>R/2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probing apparatus, and in particular, a technique effective when applied to a probing apparatus that evaluates electrical characteristics of a microelement by bringing a probe directly into contact with, for example, a nanometer (nm) scale microelement wiring or contact. It is about.

  The probe cantilever and probe are made conductive, and the probe is provided with a voltage value acquisition circuit. First, the probe is used as a probe for an atomic force microscope to determine the voltage measurement location on the fine wiring. Next, a voltage measuring apparatus is disclosed in which a probe is brought into contact with a fine wiring and a voltage is measured through a voltage value acquisition circuit unit (see, for example, Patent Document 1).

A plurality of probes having sharp tips are tilted from the normal of the sample surface (30 to 60 °) and arranged at intervals of 30 ° or more in azimuth angle, thereby simultaneously providing a plurality of probes in the submicron region. An electronic element evaluation apparatus is disclosed that performs characteristic analysis of circuit elements on an actual device by bringing them into contact (see, for example, Patent Document 2).
JP-A-5-251523 (paragraphs [0016] to [0020], FIG. 2) JP-A-9-26436 (paragraphs [0010], [0011], FIGS. 1 and 2)

  2. Description of the Related Art In recent years, a probing apparatus that measures the electrical characteristics of a single semiconductor element by bringing a probe having a tip diameter of about 10 nm directly into contact with a wiring or contact of a single semiconductor element on a nanometer scale has been adopted. The electrical characteristics of the single semiconductor element obtained by this measurement are used as basic data for product development and failure analysis.

  By the way, since the probe having a tip diameter of about 10 nm is directly brought into contact with a fine wiring or contact, it is desirable to reduce the curvature of the tip. Usually, the probe is manufactured from a wire having a diameter of about several tens of μm. Is done. In addition, the probe is repeatedly brought into contact with fine wiring or contacts in order to make electrical contact. However, this changes the shape of the tip of the probe, and it is necessary to replace the probe every time it is deformed. For these reasons, the probe must be easily handled with tweezers. Therefore, the present inventors make the probe easy to handle by welding the probe to the surface of the Cu wire serving as the holding portion.

  However, even with a probe welded to the holding portion, the probe may be removed from the holding portion while measuring the electrical characteristics of the single semiconductor element, and the probe has to be frequently replaced. Further, since the reproducibility of welding and the controllability of the probe mounting angle are poor, there is a problem that the direction of the probe varies and the usability is poor.

  An object of the present invention is to provide a probing apparatus including a probe that is easy to handle during processing or replacement.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  The probing device according to the present invention is composed of a tip-shaped probe material consisting of a conical portion and a cylindrical portion, and a cylindrical holding portion, and the probe material is provided at substantially the center of one end surface of the holding portion. One or two or more probes are provided, the diameter of the probe material is 100 μm or less, the tip diameter of the probe material is 10 to 500 nm, the diameter of the holding part is 100 μm or more, and the length of the probe material The relationship between the length L and the diameter R of the holding portion is L> R / 2.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  The probe can be handled easily when processing or replacing the probe.

  In this embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. Some or all of the modifications, details, supplementary explanations, and the like are related.

  Also, in this embodiment, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), unless otherwise specified, or in principle limited to a specific number in principle. The number is not limited to the specific number, and may be a specific number or more. Further, in the present embodiment, the constituent elements (including element steps and the like) are not necessarily essential unless particularly specified and apparently essential in principle. Yes. Similarly, in this embodiment, when referring to the shape, positional relationship, etc. of the component, etc., the shape, etc. substantially, unless otherwise specified, or otherwise considered in principle. It shall include those that are approximate or similar to. The same applies to the above numerical values and ranges.

  In the drawings used in the present embodiment, hatching may be added even in a plan view for easy understanding of the drawings. In the present embodiment, a MIS • FET (Metal Insulator Semiconductor Field Effect Transistor) representing a field effect transistor is abbreviated as MIS.

  In all the drawings for explaining the embodiments, components having the same function are denoted by the same reference numerals in principle, and the repeated description thereof is omitted. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  The probe according to this embodiment will be described with reference to FIGS. FIG. 1 shows a perspective view of the probe, and FIG. 2 shows a sectional view of the probe.

  The probe 1 provided in the probing apparatus includes a probe material 2 having a pointed tip 2a made of a conical portion 2b and a cylindrical portion 2c made of a first conductive material, and a columnar holding portion 3 made of a second conductive material. The probe material 2 is connected to a substantially central portion of one end face of the holding portion 3 by, for example, welding. Further, the diameter of the tip 2a of the probe material 2 is, for example, about 10 to 500 nm, the diameter r of the cylindrical portion 2c of the probe material 2 is set to 100 μm or less, and the diameter R of the holding part 3 is set to 100 μm or more. . Further, the length L of the probe material 2 and the diameter R of the holding portion 3 satisfy the relationship L> R / 2. As typical dimensions, the diameter of the tip 2a of the probe material 2 is 100 nm, the diameter r of the cylindrical portion 2c of the probe material 2 is 50 μm, the diameter R of the holding portion 3 is 500 μm, and the length L of the probe material 2 is The length of 300 μm and the holding part 3 can be exemplified as 10 mm.

  The first and second conductive materials are preferably conductive materials that are excellent in oxidation resistance and workability, have low resistance, and are inexpensive. For example, the first conductive material is Fe, W, Pt, Ag, Au, Pd, Ir, Cu, Mo, CNT (Carbon nanotube), Fe alloy, W alloy, Pt alloy, Ag alloy, Au alloy, Pd alloy, Ir Alloy, Cu alloy or Mo alloy, and the second conductive material is SUS, Fe, W, Pt, Ag, Au, Pd, Ir, Cu, Ni, Co, Mo, Fe alloy, W alloy, Pt alloy, Ag Alloy, Au alloy, Pd alloy, Ir alloy, Cu alloy, Ni alloy, Co alloy or Mo alloy. The first conductive material and the second conductive material may be selected from the same conductive material, or different conductive materials may be selected.

  FIG. 3 is a conceptual diagram when measuring the electrical characteristics of a single semiconductor element (MIS) using the probing apparatus provided with the probe according to the present embodiment. In FIG. 3, four probes are illustrated, but the number is not limited to this, and the probing apparatus can include one probe or two or more probes.

  As shown in FIG. 3, the tip 2a of the probe 1 is directly brought into contact with, for example, a nanometer-scale MIS gate electrode 4 and a plug 5 connected to the source and drain, respectively, and a voltage is applied to output current. The electrical characteristics of the MIS can be measured by reading by the measuring device 6 connected to the probe 1. Although not shown, the tip resistance 2a of the probe 1 can be directly brought into contact with, for example, a wiring formed in an upper layer of the MIS, and wiring resistance or contact resistance can be measured.

  Each MIS pattern with which the tip 2a of the probe 1 is brought into contact has an elliptical shape or a substantially circular shape with a diameter of about 100 to 500 nm, for example. Further, when the tip 2a of the probe 1 is brought into direct contact with each pattern of the MIS, the tip 2a of the probe 1 is brought close to a desired pattern by using an XYZ triaxial drive mechanism provided in the operation unit of the probe 1. , And contact. For this reason, it is desirable for the curvature of the tip 2a of the probe 1 to be small. Therefore, first, the diameter of the tip 2a of the probe 1 is considered to be an appropriate range of 10 to 500 nm as described above (it is not limited to this range depending on other conditions). As a range suitable for mass production, a peripheral range having a central value of 100 nm, such as 50 to 200 nm, is considered most preferable.

  Further, since the curvature of the tip 2a of the probe 1 is desired to be small, the probe material 2 needs to be finely processed. Therefore, the diameter r of the cylindrical portion 2c constituting a part of the probe material 2 is 100 μm or less, and 40 to 50 μm is considered the most suitable range for mass production. Furthermore, since the tip 2a of the probe material 2 repeatedly contacts each MIS pattern, the shape of the conical portion 2b constituting a part of the probe material 2 is easily deformed, and the probe material 2 needs to be replaced frequently. . For this reason, it is desirable that the probe material 2 is easy to handle. Therefore, in order to process the probe material 2 and replace the probe 1 with relative ease, the diameter R of the holding portion 3 is considered to be the most preferable range of 100 μm or more. Further, by setting the relationship between the length L of the probe material 2 and the diameter R of the holding portion 3 to L> R / 2, there is less vibration and the probe 1 can be detected in each MIS pattern relatively easily. The needle material 2 can be brought into contact.

  4 (a), 4 (b), 4 (c), 4 (d) and 4 (e) show modifications of the probe shown in FIG. 1 and FIG. These drawings are sectional views of the respective probes.

  The probe 1a shown in FIG. 4A is formed on the probe material 2 made of the first conductive material, the first conductive material placed in the center, and the outer periphery of the first conductive material. The first conductive material that is composed of the holding part 3 made of two conductive materials and the second conductive material, and that forms part of the holding part 3 and the first conductive material that forms the probe material 2 And one.

  The probe 1b shown in FIG. 4 (b) has conductivity on the probe material 2 made of the first conductive material, the first conductive material placed in the center, and the outer periphery of the first conductive material. The holding portion 3 is made of two or more conductive materials formed by superposing two or more layers of pipe material having the first conductive material constituting the probe material 2 and one of the holding portions 3. The first conductive material constituting the part is integrated. FIG. 4B illustrates a probe 1b composed of four layers of the first conductive material C1 and the holding portion 3 composed of the first pipe material P1, the second pipe material P2, and the third pipe material P3. However, the number of layers is not limited to this. These four layers may all be made of different materials, or some of the same materials may be used. For example, the first conductive material C1 and the second pipe material P2 can be the same material, and the first pipe material P1 and the third pipe material P3 can be the same material. Thus, by making the holding part 3 have a multilayer structure, the processing of the holding part 3 can be facilitated.

  A probe 1c shown in FIG. 4 (c) is an integrated probe in which the probe material 2 and the holding portion 3 are made of the same conductive material.

  The appearances of the probes 1a, 1b and 1c shown in FIGS. 4A, 4B and 4C are the same as the appearance of the probe 1 shown in FIG. Probes 1d and 1e shown in FIGS. 4D and 4E are different from the appearance of the probe 1 shown in FIG.

  The probe 1d shown in FIG. 4 (d) is composed of a probe material 2 made of a first conductive material and a holding part 3 made of a second conductive material. The end surface on the side of the needle material 2 has a curved shape that is convex outward. A probe 1e shown in FIG. 4 (e) is composed of a probe material 2 made of a first conductive material and a holding part 3 made of a second conductive material. A part of 2 has a shape bent obliquely with a certain angle, and contact with each pattern of a single semiconductor element can be performed relatively easily.

  5 (a), (b), (c), (d) and (e) show examples of a probe with a marker in which a marker is attached to the probe 1 shown in FIG. 1 and FIG. These figures are perspective views of each marker-equipped probe.

  A marker-provided probe 1 f shown in FIG. 5A is a long and narrow projection formed on the surface of the holding unit 3 from one end of the holding unit 3 on the probe material 2 side to the other end on the opposite side. A marker is formed. In the marker-equipped probe 1 g shown in FIG. 5B, a marker including a protrusion 7 shorter than the length of the holding unit 3 is formed on a part of the surface of the holding unit 3. A marker-provided probe 1h shown in FIG. 5C is a long and narrow slit 8 formed on the surface of the holding unit 3 from one end of the holding unit 3 on the probe material 2 side to the other end on the opposite side. A marker is formed. In the marker-equipped probe 1 i shown in FIG. 5D, a marker having a cut 8 shorter than the length of the holding unit 3 is formed on a part of the surface of the holding unit 3. A marker-equipped probe 1j shown in FIG. 5 (e) is an elongated piece of paint 9 on the surface of the holding unit 3 from one end of the holding unit 3 on the probe material 2 side to the other end on the opposite side. A marker is formed. The paint 9 may be formed on a part of the surface of the holding unit 3 to be shorter than the length of the holding unit 3. Thus, by forming a marker on the surface of the probe 1, the position and angle of the probe 1 can be easily confirmed.

  FIG. 5 shows an example of a probe with a marker in which a marker is attached to the probe 1 shown in FIGS. 1 and 2, but the probes 1a, 1b, 1c, 1d shown in FIG. It is also possible to attach the marker to 1e, whereby the position and angle of the probe 1a, 1b, 1c, 1d or 1e can be confirmed.

  As described above, according to the present embodiment, the probe 1 provided in the probing apparatus is configured by the probe material 2 having a pointed tip 2a composed of the conical portion 2b and the cylindrical portion 2c and the cylindrical holding portion 3. Then, the probe material 2 is provided at substantially the center of one end surface of the holding portion 3, the diameter r of the cylindrical portion 2 c is 100 μm or less, the diameter R of the holding portion 3 is 100 μm or more, and the length L of the probe material 2 And the diameter R of the holding portion 3 are set such that L> R / 2, the probe 1 can be easily handled when the probe 1 is processed or replaced.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the above-described embodiment, the probing apparatus that measures the electrical characteristics of a single-meter semiconductor element on the nanometer scale has been described. However, the present invention can be applied to other multi-probing systems using a probe having a fine tip diameter, for example. And the same effect can be obtained.

  The present invention can be applied to a probing apparatus or a multi-probing system including a fine probe having a tip diameter of 10 to 500 nm (typically about 100 nm).

It is a principal part perspective view of the probe by one embodiment of this invention. It is principal part sectional drawing of the probe by one embodiment of this invention. It is a conceptual diagram at the time of measuring the electrical characteristic of MIS using the probing apparatus provided with the probe by one embodiment of this invention. (A)-(e) is principal part sectional drawing of the probe which shows the modification of the probe by one embodiment of this invention. (A)-(e) is a principal part perspective view which shows the probe with a marker by one embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Probe 1a, 1b, 1c, 1d, 1e Probe 1f, 1g, 1h, 1i, 1j Probe with marker 2 Probe material 2a Tip 2b Conical part 2c Cylindrical part 3 Holding part 4 Gate electrode 5 Plug 6 Measuring instrument 7 Projection 8 Cut 9 Paint C1 First conductive material L Length P1 First pipe material P2 Second pipe material P3 Third pipe material r Diameter R Diameter

Claims (5)

A probe material having a pointed shape consisting of a conical portion and a cylindrical portion and a cylindrical holding portion, and one probe surface provided with the probe material substantially at the center of one end surface of the holding portion or A probing device comprising two or more probes, and measuring the electrical characteristics of the element by directly contacting the tip of the probe material of the probe to each pattern constituting the element,
The diameter of the probe material is 100 μm or less, the diameter of the holding portion is 100 μm or more, and the relationship between the length L of the probe material and the diameter R of the holding portion is L> R / 2. Probing device.   2. The probing apparatus according to claim 1, wherein a diameter of a tip of the probe material constituting a part of the probe is 10 to 500 nm.   2. The probing apparatus according to claim 1, wherein a part of the probe material constituting a part of the probe is bent obliquely with a certain angle.   2. The probing apparatus according to claim 1, wherein the holding portion constituting a part of the probe is formed of one material, or two or more materials are stacked in layers. apparatus.   2. The probing apparatus according to claim 1, wherein a marker made of a protrusion, a notch, or a paint is formed on a part of the surface of the holding portion constituting a part of the probe.

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