JP2007096077A - Manufacturing method of wiring board and of display apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a wiring board capable of correcting a short-circuit by avoiding degradation of processing accuracy and damages to other wires. <P>SOLUTION: A short pulse width laser beam is emitted to a wire short circuit 26 to eliminate the circuit 26. The laser beam has an energy density smaller than a processing threshold value of a material configuring a third wire (scanning wire) 22 and greater than a material configuring at least either of a first wire (signal wire) 24 and a second wire (current supply wire) 25. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a wiring substrate including an active matrix thin film transistor and the like, and a method for manufacturing a display device including the wiring substrate.

A display device such as an organic electroluminescence (organic EL) display or a liquid crystal display includes a wiring board including a plurality of wirings such as active matrix thin film transistor (TFT) elements, such as signal wirings and current supply wirings. It is comprised by this and it is set as the apparatus structure which can be driven.
FIG. 5 shows a configuration example of a main part of a conventional display device using organic EL. In this display device 101, a pixel 110 having an anode 108 and a TFT element 109 as a driving element thereof is provided on a base 103, and signals extending in the vertical direction independently so as to partition the pixel 110. A large number of wirings 106 and current supply wirings 107, and scanning wirings 104 (shown by broken lines) that are separated from each other by the interlayer insulating film 105 and extend in the lateral direction are provided in accordance with the arrangement of the pixels.

In each pixel 110, at least an organic layer 111 made of an organic light emitting material and a cathode 112 are stacked in this order on the above-described anode 108, thereby forming a main light emitting structure.
In such a display device 101, the anode 108 is driven by the scanning wiring 104, the signal wiring 106, the current supply wiring 107, and the TFT element 109 that is supplied with current through these wirings. The organic layer 111 emits light by energization therebetween.

For the driving of the anode 108 in this display device 101, that is, the light emission operation of the pixel 110 by the wirings 104, 106, and 107, the scanning wiring 104 is set to X ₁ and X ₂ , and the signal wiring using the equivalent circuit of the unit pixel shown in FIG. Description will be made assuming that 106 is Y ₁ and the current supply wiring 107 is Y ₂ .
The equivalent circuit includes an organic EL light emitting unit EL, a first TFT transistor (MOS transistor) Tr1, a second TFT transistor (MOS transistor) Tr2, and a capacitor C. One main electrode (for example, source) of the second TFT transistor Tr2 is connected to the signal line Y1, the other main electrode (for example, drain) is connected to the current supply wiring Y2 via the capacitor C, and the gate electrode is the scanning line. Connected to X1. On the other hand, the anode of the light emitting portion EL is connected to the current supply wiring Y2 via the first TFT transistor Tr1, and the gate electrode of the first TFT transistor Tr1 is connected to the connection middle point of the second TFT transistor Tr2 and the capacitor C. Is done.

The operation of this equivalent circuit is as follows.
A current is constantly supplied to the current supply wiring Y2. When a scanning pulse is applied to the scanning line X1 and a required signal is supplied to the signal line Y1, the second TFT transistor Tr2 is turned on and a required signal is written to the capacitor C. Based on the written signal, the first TFT transistor Tr1 is turned on, a current corresponding to the signal amount is supplied to the light emitting unit EL through the current supply unit Y2, and the light emitting unit EL is lit and displayed.
The display device 101 is configured by arranging a plurality of unit pixels 110 that emit light in this manner in an XY matrix.

In the manufacture of a wiring board constituting such a display device or the like, as shown in FIGS. 7A and 7B, each wiring originally provided separately from each other, for example, between the signal wiring 106 and the current supply wiring 107, Since there is a possibility that a short circuit (wiring short circuit part 112) may occur due to impurities or pattern errors, a method for correcting this short circuit without causing a new problem has been demanded.
Conventionally, as a correction method for such a short circuit, a method of removing a wiring material located at the short circuit part by laser beam irradiation has been widely used.

However, in the case of normal laser light irradiation, a wiring board (ie, a substrate to be processed) is provided at a position where it is thermally connected to the signal wiring and current supply wiring described above, for example, through an interlayer insulating film ( For example, in the case of having so-called scanning wiring), it is impossible to correct the short-circuited portion.
This is because when the wiring short-circuited portion is removed by laser light irradiation, the heat generated during the processing diffuses to the insulating film, the scanning wiring, and the like. Therefore, as shown in FIG. This may cause damage or disconnection.

Also known is a method of correcting with a short pulse width laser beam (so-called femtosecond order) having a pulse width of, for example, 10 picoseconds or less, which is said to have less thermal diffusion than ordinary laser light. Yes.
However, this method using short pulse width laser light reduces melting and scattering at the time of removal on the wiring on the substrate surface that is the object of direct correction, but insulates laser light in a normally used short wavelength band (eg, 390 nm). Since the film passes through the film and reaches the lower scanning wiring, the scanning wiring is also damaged or disconnected.

In order to solve this problem, there has been proposed a processing method for suppressing damage by intentionally changing the focal position to a position different from the substrate surface, thereby suppressing energy transmitted to the underlayer (see, for example, Patent Document 1). ).
JP2003-1467

However, when the method described in Patent Document 1 is used, the processing accuracy is significantly reduced because the focal position is off the substrate surface.
In recent years, wiring boards such as active matrix substrates have been required to have a narrower pitch (higher definition) for the purpose of improving mounting density and the like. It is hard to say that it is the most suitable as a correction method in substrate manufacturing.

  The objective of this invention is providing the manufacturing method of the wiring board which can correct a short circuit, without impairing processing precision, and the manufacturing method of the display apparatus comprised by this wiring board.

  The method of manufacturing a wiring board according to the present invention includes a wiring having at least a first wiring and a second wiring, and a plurality of third wirings separated from the first wiring and the second wiring by an interlayer insulating film. A method for manufacturing a substrate, comprising: a correction step of removing a short-circuit portion in at least one of the first wiring and the second wiring, wherein the removal in the correction step is a processing threshold of a material constituting the third wiring It is performed by irradiation with a short pulse width laser beam which is smaller and has an energy density larger than a processing threshold of a material constituting at least one of the first wiring and the second wiring.

  The display device manufacturing method according to the present invention includes at least a first wiring and a second wiring, and a plurality of wirings each including a plurality of third wirings separated from the first wiring and the second wiring by an interlayer insulating film. A manufacturing method of a display device constituted by a substrate, comprising: a correction step of removing a short-circuit portion in at least one of the first wiring and the second wiring, wherein the removal in the correction step is performed using a third wiring. The irradiation is performed by irradiation with a short pulse width laser beam having an energy density that is smaller than a processing threshold of a material to be formed and larger than a processing threshold of a material forming at least one of the first wiring and the second wiring.

  According to the method for manufacturing a wiring board according to the present invention, the method includes a correction step of removing a short-circuit portion in at least one of the first wiring and the second wiring, and the removal is performed based on a processing threshold value of a material constituting the third wiring. Since it is performed by irradiation with a short pulse width laser beam having an energy density larger than the processing threshold of the material constituting at least one of the first wiring and the second wiring, it is possible to correct the short circuit without impairing the processing accuracy. Become.

  According to the method for manufacturing a display device according to the present invention, in the manufacture of the wiring substrate constituting the display device, the removal of the short-circuited portion in at least one of the first wiring and the second wiring is processed, and the material constituting the third wiring is processed. Since it is performed by irradiation with a short pulse width laser beam having an energy density that is smaller than the threshold and larger than the processing threshold of the material constituting at least one of the first wiring and the second wiring, damage or disconnection of the third wiring is avoided. Thus, the display device can be manufactured.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, the structure of an example of a processing apparatus suitable for implementing the manufacturing method according to the present invention will be described.

1A and 1B respectively show a schematic configuration diagram showing an example of a processing apparatus suitable for use in the method for manufacturing a wiring board according to the present invention, and a schematic cross-sectional view of a local exhaust device constituting the processing apparatus.
The processing device 1 according to the present embodiment is a so-called laser repair device, and in manufacturing a display device such as a liquid crystal or an organic electroluminescence display, there is a risk of causing a so-called defect by removing the short-circuited portion by laser light irradiation. It is used to correct the location.

  In the present embodiment, the processing apparatus 1 includes, as shown in FIG. 1A, at least a pulse laser light source section 2 and a local exhaust apparatus 4 that defines a local exhaust section 3 that is a main irradiated section (processing section) by laser light. A support base 5 provided in a common chamber with the local exhaust device 4 and serving as a placement portion of a substrate to be processed (wiring substrate; a wiring substrate including an active matrix TFT element in this embodiment) 6. .

The local exhaust device 4 includes a compressed gas supply means 9 that statically floats the local exhaust device 4 by injecting compressed nitrogen toward the support base 5, and a ring of compressed gas injected toward the support base 5. The exhaust means 10 for exhausting from the gas exhaust passage (suction groove) 15, the purge gas supply means 11 for supplying the purge gas from the purge gas passage 16 to the local exhaust section 3, and the raw material gas for laser CVD in the local exhaust section 3 Supply means 12 for supplying the material gas from the flow path 17 is provided.
The compressed gas supplied from the compressed gas supply means 11 is supported by the ring-shaped compressed gas supply passage 14 constituting the supply passage and the vent and the porous gas permeable membrane 13 disposed in the opening thereof so as to face the local exhaust device 4. The light is emitted toward the table 5 and floated by a so-called static pressure floating pad configuration.

On the other hand, as shown in FIG. 1B, the local exhaust part 3 is defined between the transparent window 18 and the arrangement part of the wiring board 6 in the region surrounded by the suction groove constituting the end part of the exhaust flow path 15. Is done. The local exhaust unit 3 is substantially inwardly formed as compared with the concentric ring formed by the suction groove 15 between the transparent window 18 in the local exhaust device 4 and the wiring substrate 6 placed on the support base 5. It is thought that it is formed as a cylindrical space.
Further, in addition to the raw material gas from the material gas supply means 12 and the purge gas from the purge gas supply means 11 are mainly introduced into the local exhaust part 3, by selecting the pressure, speed, position, angle, etc. for introducing this purge gas. In addition, it is possible to suppress adhesion of the material removed by the wiring board 6 on the surface of the transparent window 18 due to scattering.

The local exhaust device 4 can be displaced relative to the wiring substrate 6 on the support base 5. The material gas supply means 12, the purge gas supply means 11, and the exhaust means 10 can improve the floating rigidity. Figured.
Here, the levitation rigidity is an adsorption force between the local exhaust device 4 and the wiring board 6, and when the levitation rigidity is not sufficient, the height (gap) of the local exhaust apparatus 4 with respect to the wiring board 6. As a result, problems such as insufficient stability of the exhaust and mechanical or mechanical stability of the local exhaust device 4 may occur, so that sufficient levitation rigidity is ensured through a short-circuit correction operation for the wiring board 6. It is desirable to keep it.

  Next, the manufacturing method of the wiring board according to the present embodiment will be described using the processing apparatus 1 described above.

First, the wiring board 6 to be irradiated with the laser light L from the pulse laser light source unit 2 is placed on the support 5 and then moved below the local exhaust device 4.
At this time, the compressed gas supply means 9 injects compressed nitrogen of a required pressure, for example, 0.2 MPa through the compressed gas supply path 14 and the porous gas permeable membrane 13 and starts exhausting from the exhaust means 10. It is preferable to avoid collision with the wiring board 6 that has moved by causing the local exhaust device 4 to float with sufficient static pressure.

  Subsequently, the argon gas is introduced from the purge gas supply means 11 at a required flow rate, for example, 50 ccm, and finally, by the local exhaust means (not shown) serving as the main pressure adjusting means of the exhaust means 10 and the local exhaust section 4. The atmosphere at a predetermined position of the wiring board 6 serving as the irradiated portion in the irradiation of the laser beam L to be performed, that is, the atmosphere of the local exhaust portion 3 is sufficiently reduced. At the same time, by adjusting the pressure in the area other than the local exhaust part 3, that is, in the peripheral part, the height and rigidity between the local exhaust apparatus 4 and the wiring board 6 are ensured. The optimum height depends on the thickness of the wiring board 6, but can be selected to be about 10 μm, for example.

Subsequently, while observing the laser irradiation portion through the transparent window 18 of the local exhaust device 4, the support base 5 is moved to move the wiring board 6 to a desired position. Thereafter, a short pulse width laser beam L is emitted from the pulse laser light source unit 2 while continuing local pumping of the local pumping unit 3 by the local pumping unit.
A short pulse width laser beam from the pulse laser light source unit 2 is introduced into the local exhaust unit 3 through the mirror 7 that defines the optical path, the lens 8, and the transparent window 18 in the transmission hole 19 to be short-circuited on the wiring board 6. The correction process which removes this short circuit location is performed by irradiating a location. As will be described later, the pulse width of the short pulse width laser light is set to 10 picoseconds (ps) or less, which is generally in the femtosecond order, as an interval that becomes shorter than the thermal diffusion at the irradiated site. Is preferred.

Here, the wiring board 6 according to the present embodiment is a wiring board including an active matrix TFT element that constitutes a main part of the display device. In the present embodiment, as shown in FIG. 2, for example, a scanning wiring 22 made of Mo (molybdenum) having a thickness of 100 nm and a Si _x N _y (silicon nitride) having a thickness of 100 nm, for example, on a substrate 21 made of glass, for example. Are formed in this order, and the signal wiring 24 and the current supply wiring 25 made of Al (aluminum) having a thickness of 500 nm, for example, are separated from the scanning wiring 22 on the interlayer insulating film 23, respectively. It has an independently formed configuration. That is, in the present embodiment, the signal wiring (first wiring) 24 and the current supply wiring 25 (second wiring) and the scanning wiring (third wiring) 22 constituting the wiring board are separated by the interlayer insulating film 23. Has been.

The wiring short-circuit portion (short-circuit portion) 26 generated on the surface of the wiring substrate 6 from the signal wiring 24 to the current supply wiring 25 is subjected to the above-described correction process to remove the wiring short-circuit portion 26, thereby An electrical short circuit between the wiring 24 and the current supply wiring 25 can be eliminated.
In the method for manufacturing the wiring board according to the present embodiment, as will be described later, the first pulse and the second wiring by the signal wiring 24 and the current supply wiring 25 are irradiated at least in the irradiated portion with the irradiation of the short pulse width laser light. The third wiring (scanning wiring) is selected by selecting an energy density that is larger than the processing threshold of the material (Al) constituting the wiring and smaller than the processing threshold of the material (Mo) constituting the third wiring by the scanning wiring 22. It becomes possible to avoid the damage or disconnection of 22.

  Next, the selection of the energy density of the short pulse width laser beam and the examination results will be described with reference to FIGS.

FIG. 3 shows the results of measuring the wavelength dependence of the processing threshold values of aluminum and molybdenum in irradiation with a short pulse width laser having a pulse width of 3 picoseconds. In the figure, the dot indicates the measurement result of aluminum, and the broken line indicates the measurement result of molybdenum.
From this measurement result, in the case of aluminum, the processing threshold energy decreases as the wavelength of the laser beam increases, whereas in the case of molybdenum, the threshold value is substantially constant at 0.02 J / cm ² , It can be confirmed that there is almost no threshold fluctuation due to wavelength change.

Therefore, only in aluminum, the laser light absorption increases as the wavelength increases, so that at least when the wiring short-circuit portion 26 is made of the same material as at least one of the signal wiring 24 and the current supply wiring 25, the short pulse width When the wavelength of the laser light is less than 700 nm, the scanning wiring 22 is damaged or disconnected by the laser light that passes through the interlayer insulating film 23 and reaches the scanning wiring 22.
That is, as in this embodiment, when the signal wiring 24 and the current supply wiring 25 are made of aluminum and the scanning wiring 22 separated by the interlayer insulating film 23 is made of molybdenum, a short pulse width laser is used. By setting the wavelength of light to 700 nm or more, it is possible to obtain an energy density of 0.02 J / cm ² or less and to suppress deterioration of the material constituting the lower scanning wiring 22.

FIG. 4 shows the measurement results of the pulse width dependence of the melt thickness on the pulse laser irradiation of the aluminum thin film constituting the signal wiring 24 and the current supply wiring 25. The melting temperature was 600 ° C. corresponding to the melting point of aluminum.
From this measurement result, it can be confirmed that the melt thickness becomes 155 nm when the pulse width of the laser light is longer than 35 picoseconds. It can also be confirmed that when the pulse width of the laser light is 0.25 picoseconds, it is approximately 20 nm.

In general, since the interlayer insulating film 23 is formed with a thickness of 100 nm or more, the scanning wiring 22 which is the lower layer of the interlayer insulating film 23 is not affected by melting above the interlayer insulating film 23. It is necessary to suppress the thickness to 100 nm or less.
Therefore, from the measurement result of FIG. 4, it is considered preferable to set the pulse width of the short pulse width laser light to 10 picoseconds or less.

As described above, according to the method of manufacturing the wiring board according to the present embodiment, at least the first wiring and the second wiring, and the third wiring separated from the first wiring and the second wiring by the interlayer insulating film, In the manufacturing of the wiring board having the first wiring and the second wiring, the removal in the correction step of removing the short-circuited portion in at least one of the first wiring and the second wiring is smaller than the processing threshold of the material constituting the third wiring. This is performed by irradiation with a short pulse width laser beam having an energy density larger than the processing threshold of the material constituting at least one of the above, and therefore it is possible to correct the short circuit without impairing the processing accuracy.
Furthermore, when the display is configured by the wiring board obtained by the manufacturing method according to the present embodiment, the third wiring is prevented from being damaged or disconnected, and a high-quality display device such as an image quality is manufactured with high yield. Is possible.

In the method for manufacturing a wiring board according to the present invention, at least one of the pulse width, wavelength, and irradiation energy of the short pulse width laser light is selected based on the thickness of the interlayer insulating film. Is preferred. This is because the material of the interlayer insulating film has such a degree that the thermal influence by the laser beam irradiation on the interlayer insulating film including the above-described melt thickness is exerted on the lower third wiring (scanning wiring in the present embodiment). Rather, it varies depending on its thickness.
The wavelength of the short pulse width laser light is preferably selected based on the absorption wavelength band of the material constituting the interlayer insulating film. This is because when the laser light itself is absorbed by the interlayer insulating film, the interlayer insulating film is altered or removed, so that the first wiring and the second wiring separated from each other by the interlayer insulating film and the third wiring are separated. This is because a new short circuit may occur with the wiring.

<Example>
Examples of the present invention will be described.
Set the attenuator so that the processing energy of the laser beam with a wavelength of 780 nm and a pulse width of 3 picoseconds is 0.015 J / cm ² or less, which is the aluminum processing threshold, set the processing size to 10 μm □, and short-circuit the slit position When laser irradiation is performed multiple times under predetermined conditions in accordance with the area, only the wiring short-circuited portion on the interlayer insulating film is removed and completely repaired without affecting the underlying scanning wiring of molybdenum. I was able to.

On the other hand, as a comparative example, the attenuator is set so that the processing energy of the laser beam having a wavelength of 390 nm and a pulse width of 3 picoseconds is 0.04 J / cm ² which is the processing threshold of aluminum, and the processing size is 10 μm □, Similarly, under the predetermined conditions, pulsed laser light was applied several times to the wiring short-circuited portion. As in the case of the prior art (FIG. 7C), not only the wiring short-circuited portion by aluminum but also the interlayer insulating film and scanning It was confirmed that even the wiring was removed and the scanning wiring was disconnected.

  The embodiment of the manufacturing method and the example of the wiring board manufacturing method and display device according to the present invention have been described above. However, the materials used, the amount thereof, the processing time, and the dimensions mentioned in the description of the above embodiment. The numerical conditions such as are merely preferred examples, and the dimensional shapes and arrangement relationships in the drawings used for the description are also schematic. That is, the present invention is not limited to this embodiment.

For example, the third wiring does not necessarily need to exist immediately below the wiring short-circuit portion, and the present invention can be applied to a position where the third wiring is thermally connected from the wiring short-circuit portion via the interlayer insulating film.
Further, for example, the signal wiring and the current supply wiring may be made of different materials, and in this case, as long as the wiring short-circuit portion can be removed, the energy density is larger than the processing threshold of the material constituting at least one of them. What is necessary is just to irradiate a laser beam.

In addition, each material constituting the first wiring to the third wiring is not limited to aluminum or molybdenum, and the structure of each wiring is, for example, a structure including an alloy or a laminated structure including 50% or more of aluminum or molybdenum. You can also
Further, for example, with respect to the processing apparatus 1, while selecting the arrangement of the mirror 7 and the like, for example, by adopting an apparatus configuration having a CW (Continuous Wave) laser light source, it is combined with correction by laser CVD (Chemical Vapor Deposition). The manufacturing method according to the present invention can be variously modified and changed such that a wiring board can be manufactured.

1A and 1B are a schematic configuration diagram showing an example of a processing apparatus suitable for use in the method for manufacturing a wiring board according to the present invention, and a schematic cross-sectional view of a local exhaust device that constitutes the processing apparatus. It is a schematic sectional drawing of the wiring board with which it uses for description of an example of the manufacturing method of the wiring board which concerns on this invention. It is a schematic diagram which shows the measurement result of the wavelength dependence of the process threshold value of the material which comprises the 1st wiring, the 2nd wiring, and the 3rd wiring in an example of the manufacturing method of the wiring board which concerns on this invention. It is a schematic diagram which shows the result of having measured the pulse width dependence of the melt thickness of the material which comprises the 1st wiring and the 2nd wiring in an example of the manufacturing method of the wiring board which concerns on this invention. It is a typical perspective view which shows the structural example of the principal part of the conventional display apparatus. It is a circuit diagram with which it uses for description of the drive and light emission operation in the pixel of the conventional display apparatus. Each of A, B, and C is a schematic perspective view for explaining a short circuit in a wiring board constituting a conventional display device, a schematic sectional view for explaining a short circuit in the wiring board, and a short-circuit correcting method by a conventional manufacturing method. It is a schematic sectional drawing with which it uses for description.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Processing apparatus, 2 ... Pulse laser light source part, 3 ... Local exhaust part, 4 ... Local exhaust apparatus, 5 ... Support stand, 6 ... Wiring board (substrate to be processed) , 7 ... Mirror, 8 ... Lens, 9 ... Compressed gas supply means, 10 ... Exhaust means, 11 ... Purge gas supply means, 12 ... Material gas supply means, 13 ... Porous ventilation membrane, 14 ... compressed gas supply passage, 15 ... exhaust passage (suction groove), 16 ... purge gas passage, 17 ... material gas passage, 18 ... transparent window, DESCRIPTION OF SYMBOLS 19 ... Transmission hole, 21 ... Base | substrate, 22 ... Scanning wiring, 23 ... Interlayer insulation film, 24 ... Signal wiring, 25 ... Current supply wiring, 26 ... Wiring short-circuit part 101 ... Conventional display device, 102 ... Conventional wiring board, 103 ... Substrate, 104 ... Scanning wiring, 105. Interlayer insulating film 106 ... Signal wiring 107 ... Current supply wiring 108 ... Anode 109 ... TFT element 110 ... Pixel 111 ... Organic layer 112 ... Cathode, 113 ... Wiring short-circuit part

Claims (11)

A method of manufacturing a wiring board having at least a first wiring and a second wiring, and a plurality of third wirings separated from the first wiring and the second wiring by an interlayer insulating film, respectively.
A correction step of removing a short-circuit portion in at least one of the first wiring and the second wiring;
The short pulse width having an energy density that is smaller than a processing threshold value of a material constituting the third wiring and larger than a processing threshold value of a material constituting at least one of the first wiring and the second wiring. A method for manufacturing a wiring board, comprising performing irradiation with laser light. The method of manufacturing a wiring board according to claim 1, wherein the wiring board is a wiring board including an active matrix type thin film transistor. The method for manufacturing a wiring board according to claim 1, wherein a pulse width of the short pulse width laser light is 10 picoseconds or less. The method of manufacturing a wiring board according to claim 1, wherein a wavelength of the short pulse width laser light is 700 nm or more. The method for manufacturing a wiring board according to claim 1, wherein the first wiring is a signal wiring, the second wiring is a current supply wiring, and the third wiring is a scanning wiring. The method for manufacturing a wiring board according to claim 1, wherein the material constituting the first wiring includes aluminum. The method for manufacturing a wiring board according to claim 1, wherein the material constituting the third wiring contains molybdenum. The method of manufacturing a wiring board according to claim 1, wherein the irradiation energy of the short pulse width laser light is 0.02 J / cm ² or less at the irradiated portion. In the short pulse width laser light irradiation,
The method for manufacturing a wiring board according to claim 1, wherein at least one of a pulse width, a wavelength, and an irradiation energy is selected based on a thickness of the interlayer insulating film. The method for manufacturing a wiring board according to claim 1, wherein the wavelength of the short pulse width laser light is selected based on an absorption wavelength band of a material constituting the interlayer insulating film. A method for manufacturing a display device comprising a wiring substrate having at least a first wiring and a second wiring, and a plurality of third wirings separated from the first wiring and the second wiring by an interlayer insulating film. There,
A correction step of removing a short-circuit portion in at least one of the first wiring and the second wiring;
The short pulse width having an energy density that is smaller than a processing threshold value of a material constituting the third wiring and larger than a processing threshold value of a material constituting at least one of the first wiring and the second wiring. A method for manufacturing a display device, which is performed by laser light irradiation.

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