JP2007042700A - Surface-mounting semiconductor device - Google Patents

Surface-mounting semiconductor device Download PDF

Info

Publication number
JP2007042700A
JP2007042700A JP2005222380A JP2005222380A JP2007042700A JP 2007042700 A JP2007042700 A JP 2007042700A JP 2005222380 A JP2005222380 A JP 2005222380A JP 2005222380 A JP2005222380 A JP 2005222380A JP 2007042700 A JP2007042700 A JP 2007042700A
Authority
JP
Japan
Prior art keywords
lead frame
emitting element
case
semiconductor device
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005222380A
Other languages
Japanese (ja)
Inventor
Masafumi Shinahama
政文 尻無浜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2005222380A priority Critical patent/JP2007042700A/en
Publication of JP2007042700A publication Critical patent/JP2007042700A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface-mounting semiconductor device which can be easily manufactured with few number of processes, while at the same time, maintaining a high heat dissipation properties. <P>SOLUTION: In manufacturing the semiconductor light-emitting device 1; a lead frame 4 mounted with a light-emitting element 2 is held between metal molds, and resin is injected into a space formed by the lead frame and the metal molds to form a case 3. Then a lead frame 5 on the light-emitting element mounted side and a lead frame 6 on the wire side, which are made projecting from the short side-side side face of the case 3, are bent along the side face and the bottom face of the case 3. The heat, generated by the light-emitting element 2, is transmitted from the mounting plane 5a of the light-emitting element mounted-side lead frame 5 to the side face 5b, and then is dissipated from the bottom face 5c to the substrate side. At the same time, the heat transmitted to a heat sink 7 is dissipated into the air. Since the heat sink 7 is formed over nearly the entire surface of the long side-side side faces of the case 3, a large amount of heat can be dissipated into the air from these faces. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、基板に実装される表面実装型半導体装置に関する。   The present invention relates to a surface mount semiconductor device mounted on a substrate.

従来の表面実装型半導体装置として例えば特許文献1に記載のものがある。図4は従来の表面実装型半導体装置の斜視図であり、図5は図4の断面図、図6は図4のリードフレームを下面側から見た斜視図である。図4に示す表面実装型半導体装置21は、発光ダイオード25を収納する凹部22を設けた略立方体の樹脂パッケージ24にリードフレーム23を埋設して形成されている。図4から図6に示すように、リードフレーム23は、凹部22の表面に露出する反射面23aの上端から樹脂パッケージ24の側面に向かって延伸し、更にこの側面から下面24fに向かって表面に露出した状態で屈曲延伸し、下面24fの表面に沿って屈曲させた部分が端子電極23cとなっている。この端子電極23cは引き続き樹脂パッケージ24内へと屈曲延伸して、反射面23aの下端と接触し、凹部22の表面に露出する。そして、この露出した部分が発光ダイオード25を搭載する接続電極23bとなっている。また、基板に搭載する際に樹脂パッケージ24を上向きにも横向きにも搭載できるように、側面に露出したリードフレーム23の一部を、隣接する両側面にも延伸させて側面電極23dとしている。   As a conventional surface mount semiconductor device, for example, there is one described in Patent Document 1. 4 is a perspective view of a conventional surface mount semiconductor device, FIG. 5 is a cross-sectional view of FIG. 4, and FIG. 6 is a perspective view of the lead frame of FIG. The surface-mount semiconductor device 21 shown in FIG. 4 is formed by embedding a lead frame 23 in a substantially cubic resin package 24 provided with a recess 22 for accommodating a light emitting diode 25. As shown in FIGS. 4 to 6, the lead frame 23 extends from the upper end of the reflective surface 23a exposed on the surface of the recess 22 toward the side surface of the resin package 24, and further on the surface from the side surface toward the lower surface 24f. A portion that is bent and stretched in an exposed state and bent along the surface of the lower surface 24f is a terminal electrode 23c. The terminal electrode 23c continues to bend and extend into the resin package 24, contacts the lower end of the reflecting surface 23a, and is exposed on the surface of the recess 22. This exposed portion serves as a connection electrode 23b on which the light emitting diode 25 is mounted. In addition, a part of the lead frame 23 exposed on the side surface is extended to the adjacent side surfaces to form the side electrode 23d so that the resin package 24 can be mounted on the substrate in both the upward and lateral directions.

特許文献1に記載の表面実装型半導体装置21は、まず帯状のアルミ板を順送り抜き曲げして立体形状にすることによりリードフレーム23を形成し、このリードフレーム23をインサート成形することによって樹脂成形部を成形して樹脂パッケージ24とし、そして、リードフレーム23の接続電極23bに発光ダイオード25を搭載して透明樹脂26で樹脂封止し、蓋部材27で凹部22を封止することによって製造される。   In the surface-mounted semiconductor device 21 described in Patent Document 1, first, a lead frame 23 is formed by progressively drawing and bending a belt-shaped aluminum plate into a three-dimensional shape, and resin molding is performed by insert molding the lead frame 23. This is manufactured by molding a portion into a resin package 24, mounting a light emitting diode 25 on the connection electrode 23 b of the lead frame 23, sealing with a transparent resin 26, and sealing the recess 22 with a lid member 27. The

特許文献1に記載の表面実装型半導体装置21は、発光ダイオード25を搭載しているリードフレーム23の接続電極23bと基板に接触する端子電極23cが連続しており、またその距離が近いので発光ダイオード25から放出される熱が基板へと伝わり易く、効率よく熱を基板側へと放出することが可能となっている。
特開2004−335740号公報
In the surface mount semiconductor device 21 described in Patent Document 1, the connection electrode 23b of the lead frame 23 on which the light emitting diode 25 is mounted and the terminal electrode 23c in contact with the substrate are continuous, and the light is emitted because the distance is short. Heat released from the diode 25 is easily transmitted to the substrate, and heat can be efficiently released to the substrate side.
JP 2004-335740 A

しかしながら、図6に示すように、特許文献1に記載の表面実装型半導体装置21のリードフレーム23は非常に複雑な形状をしており、帯状のアルミ板を打ち抜くための金型の形状も複雑となる。また、発光ダイオード25を搭載する接続電極23bを形成するために、この帯状のアルミ板を立体形状にする工程が必要となり、工程数が増えるだけでなく製造も容易ではない。   However, as shown in FIG. 6, the lead frame 23 of the surface mount semiconductor device 21 described in Patent Document 1 has a very complicated shape, and the shape of the die for punching the strip-shaped aluminum plate is also complicated. It becomes. In addition, in order to form the connection electrode 23b on which the light emitting diode 25 is mounted, a process of making this strip-shaped aluminum plate into a three-dimensional shape is required, which not only increases the number of processes but also makes it difficult to manufacture.

そこで本発明は、高い放熱性を維持しつつも、工程数が少なく容易に製造できる表面実装型半導体装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a surface mount semiconductor device that can be easily manufactured with a small number of steps while maintaining high heat dissipation.

本発明の表面実装型半導体装置は、半導体素子をケースの凹部に収納するとともに前記半導体素子に導通接続されるリードフレームを前記ケースの側面から突出させ、この突出したリードフレームをさらに前記側面から底面に沿って屈曲させた状態で基板に実装される表面実装型半導体装置において、側面に沿って屈曲させたリードフレームには、底面から、前記側面に隣接する少なくとも一方の他の側面に沿って、さらに屈曲させた放熱板が設けられ、前記放熱板は前記他の側面のほぼ全面に形成されたことを特徴とする。   The surface-mount type semiconductor device according to the present invention has a semiconductor element housed in a recess of a case and a lead frame that is conductively connected to the semiconductor element is protruded from a side surface of the case, and the protruding lead frame is further extended from the side surface to the bottom surface. In the surface mount type semiconductor device mounted on the substrate in a state bent along the lead frame, the lead frame bent along the side surface, from the bottom surface, along at least one other side surface adjacent to the side surface, Further, a bent heat radiating plate is provided, and the heat radiating plate is formed on almost the entire other side surface.

本発明の表面実装型半導体装置によれば、表面実装型半導体装置を実装した基板側への放熱だけでなく、放熱板から空気中にも効率よく熱を放出することが可能となり、高い信頼性を有する表面実装型半導体装置とすることができる。また、この放熱板は、リードフレームをケースの側面から底面に沿って屈曲させた後、さらにケースの他の側面に沿って屈曲させるだけでよいので、容易に製造することができる。   According to the surface mount semiconductor device of the present invention, it is possible not only to radiate heat to the substrate side on which the surface mount semiconductor device is mounted, but also to efficiently release heat into the air from the heat radiating plate. A surface-mount semiconductor device having In addition, the heat radiating plate can be easily manufactured because the lead frame only needs to be bent along the other side surface of the case after the lead frame is bent along the bottom surface from the side surface of the case.

本願の第1の発明は、半導体素子をケースの凹部に収納するとともに半導体素子に導通接続されるリードフレームをケースの側面から突出させ、この突出したリードフレームをさらに側面から底面に沿って屈曲させた状態で基板に実装される表面実装型半導体装置において、側面に沿って屈曲させたリードフレームには、底面から、側面に隣接する少なくとも一方の他の側面に沿って、さらに屈曲させた放熱板が設けられ、放熱板は他の側面のほぼ全面に形成されたことを特徴とする表面実装型半導体装置である。   In the first invention of the present application, a lead frame that houses a semiconductor element in a recess of the case and is electrically connected to the semiconductor element protrudes from the side surface of the case, and the protruding lead frame is further bent from the side surface along the bottom surface. In a surface-mount type semiconductor device mounted on a substrate in a bent state, a lead frame bent along the side surface is further bent from the bottom surface along at least one other side surface adjacent to the side surface. And the heat sink is formed on substantially the entire other side surface.

放熱板は、リードフレームを突出させた側面に隣接する少なくとも一方の他の側面に設けられ、さらに他の側面のほぼ全面に形成されたことにより、本発明の表面実装型半導体装置は、この表面実装型半導体装置を実装した基板側への放熱だけでなく、放熱板から空気中にも効率よく熱を放出することが可能となる。また、この放熱板は、ケースの側面から突出したリードフレームを側面から底面に沿って屈曲させた後、さらにケースの他の側面に沿って屈曲させるだけでよいので、製造も容易となる。   The heat-radiating plate is provided on at least one other side surface adjacent to the side surface from which the lead frame is projected, and is formed on substantially the entire other side surface. It is possible to efficiently release heat not only to the substrate side on which the mounting type semiconductor device is mounted but also from the heat sink to the air. In addition, the heat radiating plate can be manufactured easily because the lead frame protruding from the side surface of the case only needs to be bent along the bottom surface from the side surface, and then further bent along the other side surface of the case.

本願の第2の発明は、本願の第1の発明において、半導体素子は、リードフレームにダイボンディングされたことを特徴とする。   According to a second aspect of the present invention, in the first aspect of the present invention, the semiconductor element is die-bonded to a lead frame.

熱の発生源である半導体素子は、リードフレーム上にダイボンディングされており、半導体素子から発生した熱を、リードフレームから放熱板へと直接伝えることができるので、基板だけでなく空気中へも効率よく放熱することが可能となる。   The semiconductor element that is the source of heat is die-bonded on the lead frame, and the heat generated from the semiconductor element can be directly transferred from the lead frame to the heat sink, so that not only the board but also the air It becomes possible to dissipate heat efficiently.

(実施の形態)
以下、図を用いて本発明の実施の形態における表面実装型半導体装置について説明する。図1は、本発明の実施の形態における表面実装型半導体装置の斜視図である。図2は、本発明の実施の形態における表面実装型半導体装置を示す図であり、(a)は平面図、(b)は底面図、(c)は左側面図、(d)は右側面図である。図3は、本発明の実施の形態における表面実装型半導体装置のリードフレームの展開図である。
(Embodiment)
Hereinafter, a surface mount semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of a surface mount semiconductor device according to an embodiment of the present invention. 2A and 2B are diagrams showing a surface-mounted semiconductor device according to an embodiment of the present invention, where FIG. 2A is a plan view, FIG. 2B is a bottom view, FIG. 2C is a left side view, and FIG. FIG. FIG. 3 is a development view of the lead frame of the surface mount semiconductor device according to the embodiment of the present invention.

本実施の形態の表面実装型半導体装置は半導体発光装置1であり、ダイボンディングによりリードフレーム4上に搭載された半導体素子である発光素子2を、樹脂材料により略直方体に形成されたケース3の凹部3aに収納し、凹部3aを図示しない封止樹脂により封止したものである。   The surface mount type semiconductor device according to the present embodiment is a semiconductor light emitting device 1, and a light emitting element 2, which is a semiconductor element mounted on a lead frame 4 by die bonding, is formed in a substantially rectangular parallelepiped with a resin material. The recess 3a is housed, and the recess 3a is sealed with a sealing resin (not shown).

図3に示すように、リードフレーム4は、発光素子搭載側リードフレーム5とワイヤ側リードフレーム6とにより構成され、アルミ板や鉄板または銅板などの金属製の材料からなる帯状の薄板材を抜き型により抜くことによって隙間4aを隔てた状態で一体的に形成される。   As shown in FIG. 3, the lead frame 4 is composed of a light emitting element mounting side lead frame 5 and a wire side lead frame 6, and a strip-like thin plate material made of a metal material such as an aluminum plate, an iron plate or a copper plate is extracted. It is integrally formed with the gap 4a separated by being pulled out by a mold.

図2および図3に示すように、発光素子搭載側リードフレーム5は、発光素子搭載面5aと、ケース3の短辺側の側面から突出してこの側面に沿って屈曲される側面部5bと、ケース3の短辺側の側面からさらに底面に沿って屈曲される底面部5cと、この底面部5cから連続して形成され、ケース3の長辺側の側面に沿って屈曲される放熱板7とにより構成される。   As shown in FIGS. 2 and 3, the light emitting element mounting side lead frame 5 includes a light emitting element mounting surface 5a, a side surface portion 5b protruding from the side surface on the short side of the case 3 and bent along the side surface, A bottom surface portion 5c that is further bent along the bottom surface from the side surface on the short side of the case 3, and a heat sink 7 that is formed continuously from the bottom surface portion 5c and is bent along the side surface on the long side of the case 3. It consists of.

放熱板7は、発光素子2で発生した熱を効率よく放熱するために、長辺側の側面のほぼ全面に形成されるように、長辺側の側面と略同じ形状に形成されている。   In order to efficiently dissipate the heat generated in the light emitting element 2, the heat radiating plate 7 is formed in substantially the same shape as the side surface on the long side so as to be formed on almost the entire side surface on the long side.

また、ワイヤ側リードフレーム6は、ワイヤ2aがボンディングされるワイヤボンディング面6aと、ケース3の短辺側の側面から突出してこの側面に沿って屈曲される側面部6bと、ケース3の短辺側の側面からさらに底面に沿って屈曲される底面部6cとにより構成される。   The wire-side lead frame 6 includes a wire bonding surface 6a to which the wire 2a is bonded, a side surface portion 6b that protrudes from a side surface on the short side of the case 3 and is bent along the side surface, and a short side of the case 3 It is comprised by the bottom face part 6c bent further along the bottom face from the side surface of the side.

発光素子2で発生した熱を効率よく放熱するために、図2(b)に示すように、発光素子搭載側リードフレーム5の底面部5cはワイヤ側リードフレーム6の底面部6cよりも大きく形成されている。なお、さらに放熱性を高めるためには、底面部6cに接触しない程度にできる限り大きく底面部5cを形成するとよい。また、図2(c)、(d)に示すように、発光素子搭載側リードフレーム5の側面部5bもワイヤ側リードフレーム6の側面部6bより幅広に形成されている。   In order to efficiently dissipate the heat generated in the light emitting element 2, the bottom surface portion 5c of the light emitting element mounting side lead frame 5 is formed larger than the bottom surface portion 6c of the wire side lead frame 6 as shown in FIG. Has been. In order to further improve heat dissipation, the bottom surface portion 5c may be formed as large as possible so as not to contact the bottom surface portion 6c. 2C and 2D, the side surface portion 5b of the light emitting element mounting side lead frame 5 is also formed wider than the side surface portion 6b of the wire side lead frame 6.

次に、本実施の形態の半導体発光装置1の製造方法について説明する。   Next, a method for manufacturing the semiconductor light emitting device 1 of the present embodiment will be described.

まず、アルミ板や鉄板または銅板などの金属製の材料からなる帯状の薄板材を抜き型により抜くことによって発光素子搭載側リードフレーム5およびワイヤ側リードフレーム6を形成する。そして、発光素子搭載側リードフレーム5の発光素子搭載面5aに発光素子2をダイボンディングし、発光素子2のワイヤ2aをワイヤ側リードフレーム6のワイヤボンディング面6aにボンディングする。この状態のリードフレーム4を樹脂成形のための金型で挟持し、リードフレーム4と金型との間に形成された箱状の空間に樹脂を注入してケース3を成形する。このとき、発光素子2は、ケース3の凹部3aに収納された状態であり、発光素子搭載側リードフレーム5およびワイヤ側リードフレーム6の側面部5b,6bはそれぞれケース3の短辺側の側面から突出した状態となっている。   First, a light emitting element mounting side lead frame 5 and a wire side lead frame 6 are formed by removing a strip-shaped thin plate material made of a metal material such as an aluminum plate, an iron plate, or a copper plate with a punching die. Then, the light emitting element 2 is die-bonded to the light emitting element mounting surface 5 a of the light emitting element mounting side lead frame 5, and the wire 2 a of the light emitting element 2 is bonded to the wire bonding surface 6 a of the wire side lead frame 6. The lead frame 4 in this state is held between molds for resin molding, and the case 3 is molded by injecting resin into a box-like space formed between the lead frame 4 and the mold. At this time, the light emitting element 2 is housed in the recess 3 a of the case 3, and the side surface portions 5 b and 6 b of the light emitting element mounting side lead frame 5 and the wire side lead frame 6 are side surfaces on the short side of the case 3, respectively. It is in a state protruding from.

ケース3の成形が終わると、金型から取り外し、ケース3の短辺側の側面に沿って発光素子搭載側リードフレーム5およびワイヤ側リードフレーム6の側面部5b,6bを底面側へと屈曲させる。そして、ケース3の短辺側の側面から底面に沿って、発光素子搭載側リードフレーム5およびワイヤ側リードフレーム6の底面部5c,6cを屈曲させる。発光素子搭載側リードフレーム5においては、さらにケース3の長辺側の側面に沿って放熱板7をそれぞれ屈曲させる。最後に、凹部3aに封止樹脂を注入することにより、発光素子2を封止する。以上の工程により半導体発光装置1が製造される。   When the molding of the case 3 is completed, the case 3 is removed from the mold, and the side surface portions 5b and 6b of the light emitting element mounting side lead frame 5 and the wire side lead frame 6 are bent toward the bottom surface along the side surface on the short side of the case 3. . Then, the bottom surface portions 5 c and 6 c of the light emitting element mounting side lead frame 5 and the wire side lead frame 6 are bent along the bottom surface from the side surface on the short side of the case 3. In the light emitting element mounting side lead frame 5, the heat sink 7 is further bent along the long side surface of the case 3. Finally, the light emitting element 2 is sealed by injecting a sealing resin into the recess 3a. The semiconductor light emitting device 1 is manufactured through the above steps.

本実施の形態の半導体発光装置1は、図示しない基板に実装されて使用されるが、発光素子2で発生した熱は、発光素子搭載側リードフレーム5の発光素子搭載面5aから側面部5bに伝わり、さらに底面部5cから基板側へと放熱されると同時に、底面部5cから放熱板7へ伝わった熱は空気中へ放熱される。放熱板7はケース3の長辺側の側面のほぼ全面に形成されているので、この面から空気中へ大量の熱を放出することができる。   The semiconductor light emitting device 1 of the present embodiment is used by being mounted on a substrate (not shown), but the heat generated in the light emitting element 2 is transferred from the light emitting element mounting surface 5a of the light emitting element mounting side lead frame 5 to the side surface portion 5b. At the same time, heat is radiated from the bottom surface portion 5c to the substrate side, and at the same time, heat transmitted from the bottom surface portion 5c to the heat radiating plate 7 is radiated into the air. Since the heat radiating plate 7 is formed on almost the entire side surface of the long side of the case 3, a large amount of heat can be released from this surface into the air.

このように、本実施の形態の半導体発光装置1は、リードフレームを予め立体成形することなく帯状の薄板材に発光素子2を接着させた状態で樹脂成形することができ、樹脂成形によって形成されたケース3の側面および底面に沿って、突出した発光素子搭載側リードフレーム5およびワイヤ側リードフレーム6をそれぞれ屈曲させるだけで高い放熱性を有する半導体発光装置を容易に製造することができる。   As described above, the semiconductor light emitting device 1 according to the present embodiment can be resin-molded in a state where the light-emitting element 2 is bonded to a strip-shaped thin plate material without the three-dimensional molding of the lead frame in advance, and is formed by resin molding. A semiconductor light emitting device having high heat dissipation can be easily manufactured by simply bending the light emitting element mounting side lead frame 5 and the wire side lead frame 6 protruding along the side and bottom surfaces of the case 3.

なお、放熱板7はリードフレーム4と一体的に形成されており導電性を有するので、発光素子搭載側の端子としても利用することができる。また、本実施の形態の放熱板7はケース3の長辺側の両側面に形成されていたが、発光素子2の熱の発生量が多くない場合は、片方だけに設ける構成であってもよい。また、放熱板7を発光素子搭載側リードフレーム5の側面部5bに連設させて形成することも可能であるが、発光素子搭載側リードフレーム5を形成するために必要とする帯状の薄板材の面積が増える上に無駄な部分ができてしまうので注意する必要がある。   In addition, since the heat sink 7 is integrally formed with the lead frame 4 and has conductivity, it can also be used as a terminal on the light emitting element mounting side. Moreover, although the heat sink 7 of this Embodiment was formed in the both sides | surfaces of the long side of case 3, when the amount of heat generation of the light emitting element 2 is not large, even if it is the structure provided only in one side Good. Further, although it is possible to form the heat radiating plate 7 continuously with the side surface portion 5b of the light emitting element mounting side lead frame 5, a strip-shaped thin plate material necessary for forming the light emitting element mounting side lead frame 5 is used. In addition to increasing the area, it is necessary to be careful because unnecessary parts are formed.

本発明は、高い放熱性を維持しつつも、工程数が少なく容易に製造できる表面実装型半導体装置として有用である。   The present invention is useful as a surface-mount semiconductor device that can be easily manufactured with a small number of steps while maintaining high heat dissipation.

本発明の実施の形態における表面実装型半導体装置の斜視図The perspective view of the surface mounting type semiconductor device in an embodiment of the invention 本発明の実施の形態における表面実装型半導体装置を示す図であり、(a)は平面図、(b)は底面図、(c)は左側面図、(d)は右側面図BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the surface mount type semiconductor device in embodiment of this invention, (a) is a top view, (b) is a bottom view, (c) is a left view, (d) is a right view. 本発明の実施の形態における表面実装型半導体装置のリードフレームの展開図FIG. 3 is a development view of a lead frame of a surface mount semiconductor device in an embodiment of the present invention 従来の表面実装型半導体装置の斜視図Perspective view of a conventional surface mount semiconductor device 従来の表面実装型半導体装置の断面図Sectional view of a conventional surface mount semiconductor device 従来の表面実装型半導体装置のリードフレームを下面側から見た斜視図A perspective view of a lead frame of a conventional surface mount semiconductor device as seen from the lower surface side

符号の説明Explanation of symbols

1 半導体発光装置
2 発光素子
3 ケース
3a 凹部
4 リードフレーム
4a 隙間
5 発光素子搭載側リードフレーム
5a 発光素子搭載面
5b 側面部
5c 底面部
6 ワイヤ側リードフレーム
6a ワイヤボンディング面
6b 側面部
6c 底面部
7 放熱板
DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Light emitting element 3 Case 3a Recessed part 4 Lead frame 4a Gap 5 Light emitting element mounting side lead frame 5a Light emitting element mounting surface 5b Side surface part 5c Bottom surface part 6 Wire side lead frame 6a Wire bonding surface 6b Side surface part 6c Bottom surface part 7 Heat sink

Claims (2)

半導体素子をケースの凹部に収納するとともに前記半導体素子に導通接続されるリードフレームを前記ケースの側面から突出させ、この突出したリードフレームをさらに前記側面から底面に沿って屈曲させた状態で基板に実装される表面実装型半導体装置において、
側面に沿って屈曲させたリードフレームには、底面から、前記側面に隣接する少なくとも一方の他の側面に沿って、さらに屈曲させた放熱板が設けられ、前記放熱板は前記他の側面のほぼ全面に形成されたことを特徴とする表面実装型半導体装置。
A semiconductor element is housed in a recess of the case and a lead frame that is conductively connected to the semiconductor element is protruded from the side surface of the case, and the protruding lead frame is further bent from the side surface along the bottom surface to the substrate. In the surface mounted semiconductor device to be mounted,
The lead frame bent along the side surface is provided with a further bent heat radiating plate from the bottom surface along at least one other side surface adjacent to the side surface, and the heat radiating plate is substantially the same as the other side surface. A surface-mount type semiconductor device formed over the entire surface.
前記半導体素子は、前記リードフレームにダイボンディングされたことを特徴とする請求項1に記載の表面実装型半導体装置。 2. The surface mount semiconductor device according to claim 1, wherein the semiconductor element is die-bonded to the lead frame.
JP2005222380A 2005-08-01 2005-08-01 Surface-mounting semiconductor device Pending JP2007042700A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005222380A JP2007042700A (en) 2005-08-01 2005-08-01 Surface-mounting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005222380A JP2007042700A (en) 2005-08-01 2005-08-01 Surface-mounting semiconductor device

Publications (1)

Publication Number Publication Date
JP2007042700A true JP2007042700A (en) 2007-02-15

Family

ID=37800436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005222380A Pending JP2007042700A (en) 2005-08-01 2005-08-01 Surface-mounting semiconductor device

Country Status (1)

Country Link
JP (1) JP2007042700A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053726A (en) * 2006-08-23 2008-03-06 Seoul Semiconductor Co Ltd Light emitting diode package
JP2009088534A (en) * 2007-10-01 2009-04-23 Yiguang Electronic Ind Co Ltd Light emitting diode device
JP2010040791A (en) * 2008-08-05 2010-02-18 Nichia Corp Optical semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053726A (en) * 2006-08-23 2008-03-06 Seoul Semiconductor Co Ltd Light emitting diode package
JP2009088534A (en) * 2007-10-01 2009-04-23 Yiguang Electronic Ind Co Ltd Light emitting diode device
JP2010040791A (en) * 2008-08-05 2010-02-18 Nichia Corp Optical semiconductor device

Similar Documents

Publication Publication Date Title
TWI515932B (en) Led package with efficient, isolated thermal path
US9698312B2 (en) Resin package and light emitting device
KR101326888B1 (en) Semiconductor light emitting device package
TWI533477B (en) Light emitting device and package array for light emitting devices
JP2005294736A (en) Manufacturing method for semiconductor light emitting device
JP2006093470A (en) Lead frame, light-emitting device, and manufacturing method thereof
US20090289274A1 (en) Package structure of light emitting diode and method of manufacturing the same
WO2007069399A1 (en) Light emitting device, semiconductor device, and its manufacturing method
JP4976168B2 (en) Light emitting device
JP2008016744A (en) Package for semiconductor light emitting device, and manufacturing method thereof
US9159893B2 (en) Light emitting device including lead having terminal part and exposed part, and method for manufacturing the same
US9018653B2 (en) Light emitting device, circuit board, packaging array for light emitting device, and method for manufacturing packaging array for light emitting device
JP2006344717A (en) Light-emitting device and its manufacturing method
KR20110103929A (en) Light emitting diode package and light unit having the same
KR101851818B1 (en) Light-emitting device, and method for manufacturing circuit board
JP2007042700A (en) Surface-mounting semiconductor device
KR20080079745A (en) Led package base having double heat sink structure of lead-flame and heat sink plate and method of fabricating thereof
KR100700883B1 (en) Light emitting device package and method for fabricating the same
TW201409763A (en) Light emitting diode package and method for manufacturing the same
US20120314419A1 (en) Heat dissipation structure of light-emitting diode
JP2008218762A (en) Light-emitting device
JP2017098212A (en) Lamp fitting and manufacturing method of the same
US20120106171A1 (en) Led package structure
KR101725221B1 (en) mold structure for light emitting diode pakage
JP5359135B2 (en) Light emitting device