JP2007033470A - Photomask blank, photomask, and method for manufacturing the same - Google Patents

Photomask blank, photomask, and method for manufacturing the same Download PDF

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JP2007033470A
JP2007033470A JP2005211942A JP2005211942A JP2007033470A JP 2007033470 A JP2007033470 A JP 2007033470A JP 2005211942 A JP2005211942 A JP 2005211942A JP 2005211942 A JP2005211942 A JP 2005211942A JP 2007033470 A JP2007033470 A JP 2007033470A
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film
light
chromium
photomask blank
nm
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JP4933754B2 (en
Inventor
Yuichi Fukushima
Takashi Haraguchi
Masahide Iwakata
Yoshiaki Konase
Tamotsu Maruyama
Satoshi Okazaki
Tadashi Saga
Hiroki Yoshikawa
保 丸山
匡 佐賀
崇 原口
博樹 吉川
智 岡崎
政秀 岩片
良紀 木名瀬
祐一 福島
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Shin Etsu Chem Co Ltd
Toppan Printing Co Ltd
信越化学工業株式会社
凸版印刷株式会社
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Priority claimed from DE200660021102 external-priority patent/DE602006021102D1/en
Priority claimed from CN200610107711.4A external-priority patent/CN1900819B/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a photomask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the same. <P>SOLUTION: A light shielding film 12 against exposure light is disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The film is designed in such a manner that the total film thickness of the light shielding film is 100 nm or less and that the film thickness of a chromium compound having optical density (OD) of 0.025 nm<SP>-1</SP>or less per unit film thickness with respect to light at 450 nm wavelength possesses 70% or more of the total film thickness. In order to use the photomask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 nm or 248 nm wavelength. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a photomask, a mask blank that is a material of the photomask, and a manufacturing technique thereof.

  In recent years, advanced semiconductor microfabrication technology has become an extremely important elemental technology in order to meet the demand for circuit pattern miniaturization accompanying the high integration of large-scale integrated circuits. For example, high integration of a large scale integrated circuit requires a thinning technique for a wiring pattern constituting a circuit and a miniaturization technique for a contact hole pattern for wiring between layers constituting a cell. The reason why pattern miniaturization of large-scale integrated circuits is accelerated is because of its high-speed operation and low power consumption, and the most effective method is that of pattern miniaturization.

  Since most of such advanced microfabrication is performed by a photolithography technique using a photomask, the photomask is a basic technique that supports the miniaturization technique together with the exposure apparatus and the resist material. For this reason, technological development for forming a finer and more accurate pattern on the photomask blank is underway for the purpose of realizing a photomask having the above-described thinned wiring pattern and miniaturized contact hole pattern. Has been.

  In order to form a highly accurate photomask pattern on a photomask substrate, it is premised that a resist pattern formed on a photomask blank is patterned with high accuracy. Since photolithography when microfabricating a semiconductor substrate is performed by a reduction projection method, the size of the pattern formed on the photomask is about four times the size of the pattern formed on the semiconductor substrate. This does not mean that the accuracy of the pattern formed on the photomask is relaxed, but rather it is required to form the photomask pattern with higher accuracy than the pattern accuracy obtained on the semiconductor substrate after exposure.

  At present, the size of a circuit pattern drawn on a semiconductor substrate by photolithography has become much smaller than the wavelength of exposure light, so a photomask pattern is formed by enlarging the circuit pattern four times as it is. When reduced exposure is performed using the photomask formed, the shape according to the photomask pattern cannot be transferred to the resist film due to the influence of exposure light interference or the like.

  Therefore, as a super-resolution mask, so-called optical proximity effect correction (OPC) is applied to the OPC mask, which uses optical proximity effect correction technology that degrades the transfer characteristics, and the phase of adjacent aperture patterns. Is normally used as a phase shift mask in which the light amplitude in the middle of adjacent aperture patterns is made zero by changing the angle 180 °. For example, it is necessary to form an OPC pattern (hammer head, assist bar, etc.) having a size of 1/2 or less of the circuit pattern on the OPC mask.

  In order to form a mask pattern, a photoresist film is usually formed on a photomask blank provided with a light-shielding film on a transparent substrate, and patterning is performed by irradiating the photoresist film with an electron beam. The photoresist film is developed to obtain a resist pattern. A photomask pattern is obtained by patterning this resist pattern as an etching mask for a light-shielding film. In order to obtain a fine photomask pattern, the photoresist film is formed for the following reasons. It is effective to reduce the thickness.

  If only the resist pattern is miniaturized without reducing the thickness of the resist film, the aspect ratio (the ratio between the resist film thickness and the pattern width) of the resist portion that functions as an etching mask for the light-shielding film increases. In general, when the aspect ratio of a resist pattern increases, the pattern shape tends to deteriorate, and the pattern transfer accuracy to a light-shielding film using this as an etching mask decreases. In extreme cases, a part of the resist pattern may fall down or peel off, resulting in pattern omission. Therefore, with the miniaturization of the photomask pattern, it is necessary to reduce the film thickness of the resist used as an etching mask for light shielding film patterning so that the aspect ratio does not become too large. The aspect ratio is desirably 3 or less. For example, in order to form a 70 nm resist pattern, the resist film thickness is desirably 210 nm or less.

  By the way, many materials have already been proposed as light-shielding film materials when patterning is performed using a photoresist as an etching mask. Of these, chromium metal films and chromium-based compound films have a large amount of information for etching, and chromium-based materials have always been used as materials for light-shielding films in practice, and have been established as de facto standard processing steps. Yes. For example, Patent Documents 1 to 3 disclose a configuration example of a photomask blank in which a light-shielding film having a light-shielding characteristic required for a photomask blank for ArF exposure is formed of a chromium-based compound.

  A light-shielding film of chromium-based compound is generally patterned by chlorine-based dry etching containing oxygen, but this etching condition often exhibits an etching effect that cannot be ignored even for organic films such as photoresist. . For this reason, if a light-shielding film of a chromium compound is etched using a relatively thin resist film as a mask, the resist is damaged during the etching and the shape of the resist pattern changes, and the original resist pattern is shielded from light. It becomes difficult to transfer accurately on the film.

  However, it is technically difficult to simultaneously achieve high resolution, high patterning accuracy, and etching resistance in a photoresist that is an organic film. Therefore, as long as the conventional patterning process is followed, in order to obtain high resolution, the photoresist film must be thinned. On the other hand, in order to ensure etching resistance in the patterning process, the photoresist film must be thinned. As a result, there is a trade-off between high resolution and etching resistance.

Therefore, in order to reduce the load on the photoresist to reduce the film thickness and form a highly accurate photomask pattern, the structure (thickness, composition, etc.) of the light-shielding film to be patterned is optimal. It is necessary to make it.
JP 2003-195479 A JP 2003-195483 A Registered Utility Model No. 3093632 JP 2001-312043 A JP-A 63-85553

  For example, Patent Document 4 reports an example in which a tantalum metal film is used as a light-shielding film for ArF exposure. In this example, a tantalum metal film is used as the light-shielding film, and a tantalum oxide film is used as the antireflection film. In order to reduce the load on the photoresist when etching these two layers, the photoresist is relatively damaged. Etching is performed with a fluorine-based gas plasma that is difficult to impart. However, even if such etching conditions are selected, there is a limit to reducing the load on the photoresist as long as the two layers of the light-shielding film and the antireflection film are etched using only the photoresist as a mask. It is difficult to sufficiently satisfy the requirement for forming a precise photomask pattern with high accuracy.

On the other hand, a technique of reducing the burden on the photoresist during dry etching by using a hard mask is also known. For example, Patent Document 5 discloses a technique using a SiO 2 film formed on a metal silicide film as an etching mask. A method of performing dry etching of a silicide film is disclosed. However, since the SiO 2 film has poor conductivity, there is a problem that charge-up occurs during electron beam exposure. Further, the defect inspection of the photomask blank is generally performed based on the reflectance, and in order to accurately perform the defect inspection of the ArF exposure mask in which the light having the wavelength of 257 nm is used, the wavelength of this wavelength is used. A reflectance of about 10 to 20% is required for light. However, when the SiO 2 film is used as an etching mask, there is a problem that the reflectivity of the SiO 2 film is too high and hinders the defect inspection itself.

As described above, in the structure of the conventional photomask blank, it is difficult to sufficiently satisfy the demand for forming a fine photomask pattern on the light-shielding film with high accuracy, which means that the exposure light wavelength is short and high. This is particularly serious in a photomask for photolithography (KrF: 248 nm, ArF: 193 nm, F 2 : 157 nm) using light having a wavelength of 250 nm or less, which requires resolution, as exposure light. Accordingly, as the wavelength of exposure light becomes shorter, the design of a light-shielding film that can reduce the load on the photoresist for forming a high-precision photomask pattern becomes increasingly important.

  The present invention has been made in view of such a problem, and an object of the present invention is to make it possible to reduce the thickness of a photoresist used as a mask when forming a photomask pattern, thereby enabling fine photo processing. It is an object of the present invention to provide a photomask blank including a light-shielding film having a structure capable of forming a mask pattern with high accuracy, and a photomask manufactured using the photomask blank.

In order to solve such problems, the present invention provides a photomask blank having a light-shielding film against exposure light on a transparent substrate, wherein the light-shielding film is an entire film. The thickness of the chromium-based compound having a thickness of 100 nm or less and an optical density per unit film thickness (OD) of 0.025 nm −1 or less for light having a wavelength of 450 nm occupies 70% or more of the total film thickness. To do.

  According to a second aspect of the present invention, in the photomask blank according to the first aspect, the total film thickness of the light-shielding film is 80 nm or less.

  According to a third aspect of the present invention, in the photomask blank according to the first or second aspect, the light-shielding film has a total chromium film thickness of a chromium compound having a chromium content of 50 at% or less in atomic ratio. It occupies 70% or more.

  According to a fourth aspect of the present invention, in the photomask blank according to any one of the first to third aspects, the light-shielding film includes a chromium metal film having a chromium content of 50 at% or more in atomic ratio, and chromium. First and second chromium-based compound films having an atomic ratio of 50 at% or less, and the chromium metal film is provided between the first chromium-based compound film and the second chromium-based compound film. It is provided in.

  According to a fifth aspect of the present invention, in the photomask blank according to any one of the first to fourth aspects, the light-shielding film includes a first and a second one having a chromium content of 50 at% or more in atomic ratio. A chromium metal film, and first, second, and third chromium compound films having a chromium content of 50 at% or less in atomic ratio, wherein the first chromium metal film is the first chromium compound film And the second chromium-based compound film, and the second chromium metal film is provided between the second chromium-based compound film and the third chromium-based compound film. It is characterized by.

  A sixth aspect of the present invention is the photomask blank according to the fourth or fifth aspect, wherein the second chromium-based compound film has a thickness in the range of 3 to 30 nm.

  The invention according to claim 7 is the photomask blank according to any one of claims 1 to 6, wherein the light-shielding film has a reflectance of 30% or less with respect to light having a wavelength of 250 nm to 270 nm. Features.

  According to an eighth aspect of the present invention, in the photomask blank according to any one of the first to seventh aspects, the light-shielding film has an antireflection function.

  The invention according to claim 9 is the photomask blank according to any one of claims 1 to 8, wherein an optical density (OD) of the light-shielding film is from 2.5 to 193 nm with respect to light having a wavelength of 193 nm. It is 3.5.

  The invention according to claim 10 is the photomask blank according to any one of claims 1 to 8, wherein the optical density (OD) of the light-shielding film is 2.5 to 248 nm for light having a wavelength of 248 nm. It is 3.5.

  According to an eleventh aspect of the present invention, in the photomask blank according to any one of the first to tenth aspects, the light-shielding film is a multilayer film formed by laminating a plurality of films. The surface layer has a thickness of 10 to 40 nm.

  The invention described in claim 12 is the photomask blank according to any one of claims 1 to 11, wherein the light-shielding film is a multilayer film in which a plurality of films having different optical characteristics are laminated, The extinction coefficient (k) of the outermost layer of the multilayer film is 1.0 to 1.5 with respect to light having a wavelength of 193 nm.

  The invention according to claim 13 is the photomask blank according to any one of claims 1 to 12, wherein the light-shielding film is a multilayer film in which a plurality of films having different optical characteristics are laminated, The main constituent material of the outermost layer of the multilayer film is chromium oxide, chromium nitride or chromic oxynitride, and oxygen, nitrogen in the film at a depth range of 0.5 to 1.0 nm from the surface of the outermost layer, and The carbon content ratio (at%) is characterized by the relationship of oxygen content ratio> nitrogen content ratio> carbon content ratio.

  The invention described in claim 14 is the photomask blank according to any one of claims 1 to 13, wherein a chemically amplified photoresist film having a thickness of 250 nm or less is provided on the light-shielding film. It is characterized by that.

  The invention according to claim 15 is the photomask blank according to claim 14, wherein the chemically amplified photoresist film has a solid content of 10% by weight or less of the amount of the organic solvent, and a surfactant. It is a coating film of the chemical amplification type photoresist contained.

  A sixteenth aspect of the present invention is the photomask blank according to the fifteenth aspect, wherein the chemically amplified photoresist has a surfactant content ratio of 10 to 1000 ppm.

  The invention described in claim 17 is the photomask blank according to claim 15 or 16, wherein the surfactant includes a surfactant component having a fluorine substituent.

  The invention according to claim 18 is the photomask blank according to claim 15 or 16, wherein the surfactant includes a nonionic surfactant component having neither a fluorine substituent nor a silicon-containing substituent. It is characterized by that.

  The invention described in claim 19 is a photomask, which is produced using the photomask blank according to any one of claims 1 to 18.

  The invention described in claim 20 and claim 21 is a photomask blank and a method for manufacturing a photomask, respectively, wherein the surface of the photomask blank according to any one of claims 1 to 13 has a thickness of 250 nm or less. And a step of applying a chemically amplified photoresist film having a thickness of 5 mm.

  In the photomask blank of the present invention, a light-shielding film having a high etching rate and a low metal content is provided with a film thickness of 100 nm or less. Therefore, even if a thin photoresist film (for example, a chemically amplified photoresist film having a thickness of 250 nm or less) is applied and used as a mask, damage received during etching is greatly reduced. As described above, the photomask blank of the present invention optimizes the film thickness and composition of each layer so as to obtain desired optical characteristics, and the light-shielding film is a film having a low metal content ratio, thereby improving the dry etching rate. Since it was decided to increase, the load during dry etching on the photoresist used as a mask when forming a photomask pattern is reduced, etching resistance with no practical problems is secured, and the photoresist film can be made thin It becomes. That is, according to the present invention, it is possible to reduce the thickness of the photoresist film for forming a fine photomask pattern with high accuracy.

  Further, according to the present invention, the composition of the light-shielding film provided on the photomask blank is reduced in chrominance (light element enrichment) as compared with the conventional chromium-based light-shielding film to increase the dry etching rate, Since the film thickness and the laminated structure are optimized so as to achieve optical characteristics, the load during dry etching on the photoresist used as a mask when forming a photomask pattern is reduced, which is a practical problem. Therefore, it is possible to reduce the thickness of the photoresist film.

  In particular, the light-shielding film of the present invention has a structure in which a light element-rich, low-chromium composition film and a thin chromium metal (sex) film are laminated in order to reduce the thickness and ensure sufficient light-shielding properties. Therefore, in addition to the light-shielding property being improved by the thin chromium metal film, the stress acting between the laminated films is relieved, and further sufficient conductivity can be secured. .

  In other words, according to the present invention, a plurality of requirements of simultaneously controlling optical characteristics for setting the transmittance T and the reflectance R to desired values, stress relaxation during film formation, and conductivity control of the light-shielding film are simultaneously satisfied. In addition, a photomask blank capable of forming a fine photomask pattern on the light-shielding film with high accuracy can be obtained.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

(Light-shielding film provided in the photomask of the present invention)
In order to reduce the thickness of a photoresist used as a mask when forming a photomask pattern, it is possible to reduce damage to the photoresist during etching of a light-shielding film patterned by the photoresist mask. Therefore, the time required for etching the light-shielding film can be shortened by reducing the physical thickness of the light-shielding film to be patterned and / or increasing the etching speed of the light-shielding film. It is an important point.

  According to the results of investigations by the inventors, it has been confirmed that an increase in the etching rate of the light-shielding film can be achieved by lowering the metal content ratio in the film, which is generally used. This means that high-speed etching is possible by designing the film so that the chromium content (content ratio) of the chromium-based light-shielding film is low.

For example, when a chromium compound light-shielding film is dry-etched with chlorine gas containing oxygen (mixed gas of Cl 2 gas and O 2 gas), the chromium content ratio (atomic%) in the light-shielding film is The lower the film, the higher the etching rate. Therefore, if the chromium content ratio in the film is reduced and the light element content ratio is increased, the light-shielding film can be etched at high speed, and the load on the photoresist mask can be reduced.

  However, when the light element content ratio in the chromium compound film is increased and the chromium content ratio is decreased, the attenuation coefficient k on the long wavelength side is decreased, and as a result, the transmittance T is increased and the light shielding property is lowered. Therefore, if the chromium content in the film is simply lowered, the film thickness must be increased in order to ensure the light-shielding property as the light-shielding film, and the original etching time can be shortened. It becomes difficult. That is, there is a trade-off between increasing the etching rate of the light-shielding film and reducing the thickness.

  Further, as already described, the photomask blank is inspected for defects before its patterning. However, since this defect inspection is generally performed based on the reflectance of light having an inspection wavelength, the defect inspection is performed with high accuracy. For this purpose, it is necessary to design optical characteristics for making the reflectance within an appropriate range so that the reflectance of the light-shielding film does not become too high or too low. That is, in order to perform defect inspection of a photomask blank with high accuracy, the reflectance control of the light-shielding film is an important point.

  As described above, when designing a light-shielding film for a photomask blank that enables a thinner photoresist mask, dry etching is performed by lowering the chromium content of the chromium-based light-shielding film and increasing the light element content ratio. In addition, the chromium compound composition and the film thickness d for setting the attenuation coefficient k (transmittance T) and the reflectance R to be provided as an optical film to desired values must be selected. Further, when the light-shielding film is formed of a plurality of layers, it is necessary to make the laminated structure appropriate.

  Furthermore, from the viewpoint of film formation technology when a photomask blank is formed by laminating a plurality of films, the strain (stress) acting between the mutually laminated films can be sufficiently relaxed. In addition to being required, it is also necessary to have a predetermined range of conductivity required when used as a photomask.

  That is, in order to obtain a photomask in which a fine pattern is formed on the light-shielding film with high accuracy, control of optical characteristics for setting the transmittance T and the reflectance R to desired values, stress during film formation It is required to simultaneously satisfy a plurality of requirements such as relaxation and conductivity control of the light-shielding film.

  Therefore, in the photomask blank of the present invention, the composition of the light-shielding film of the chromium compound is a light element rich and low chromium composition as compared with the conventional film, thereby increasing the speed of dry etching, and desired. The composition, film thickness, and laminated structure for obtaining the transmittance T and the reflectance R are appropriately designed.

  The light-shielding film provided in the photomask blank of the present invention is formed by laminating a light element-rich, low-chromium composition film and a thin chromium metal (material) film in order to reduce the thickness and ensure sufficient light-shielding properties. It is made the structure. Providing a thin chromium metal (sex) film not only improves the light-shielding property, but also reduces the stress acting between the laminated films and increases the conductivity. It will be. Therefore, it is possible to simultaneously satisfy a plurality of requirements such as control of optical characteristics for setting the transmittance T and the reflectance R to desired values, stress relaxation during film formation, and conductivity control of the light-shielding film. A photomask blank is obtained.

  As described above, the light-shielding film included in the photomask blank of the present invention has a structure in which a light element-rich and low-chromium composition film and a thin chromium metal (sex) film are laminated. Various characteristics of the light element-rich and low-chromium composition film that is the basis of the invention will be described.

  1A to 1C are schematic cross-sectional views for explaining a configuration example of a light-shielding film provided in the photomask blank of the present invention, and FIG. 1D is an optical characteristic of these light-shielding films ( It is a figure for demonstrating the composition dependence (chromium content ratio dependence) of a reflectance and the transmittance | permeability. The three light-shielding films (A, B, and C) illustrated here are all formed on one main surface of an optically transparent quartz substrate 11 and have chromium as a main component element. This is an oxynitride film (CrON film) 12, and the chromium content ratio and the oxygen content ratio in the film are different. Specifically, the light shielding film A is 41 at% Cr · 46 at% O · 13 at% N, the light shielding film B is 43 at% Cr · 37 at% O · 20 at% N, and the light shielding film C is 45 at% Cr · 31 at%. % O · 24 at% N.

Each of these chromic oxynitride films has a thickness of about 70 nm. The substrate 11 may be a general transparent substrate such as CF 2 or aluminosilicate glass in addition to quartz.

  Here, the chromium content ratio is obtained by ESCA (Electron Spectrum for Chemical Analysis), and is a value obtained by averaging the chromium contained in the light-shielding film over the entire thickness of the film. The chromium content of a general chromium-based light-shielding film is about 55 to 70 at%, whereas the chromium content of the light-shielding film of the present invention is 50 at% or less, and the chromium content is greatly reduced. ing.

In the present specification, a light-shielding film having a chromium content ratio of 50 at% or more is sometimes referred to as a “metal film”. The film thickness of the compound is designed to occupy 70% or more of the total film thickness. Further, this light-shielding film is formed so that the film thickness of the chromium-based compound having an optical density OD per unit film thickness of 0.03 (nm −1 ) or less for light having a wavelength of 450 nm occupies 70% or more of the total film thickness. You may make it design. Here, “optical density per unit film thickness” means OD (dimensionless) of the light shielding film / film thickness (nm) of the light shielding film.

  FIG. 1D is a diagram for explaining the wavelength dependence of the transmittance of the light shielding films A, B, and C. According to the result shown in this figure, the chromium content ratio in the light shielding film is shown. It can be seen that the transmittance (and reflectivity) can be changed by changing. In particular, it is possible to change the transmittance (and transmittance) in a wavelength region longer than this wavelength while maintaining the transmittance for a wavelength shorter than 248 nm used in KrF exposure substantially constant.

  FIG. 2 is a diagram for explaining the dependency of the reflectance on light with a wavelength of 257 nm used for defect inspection of a photomask blank on the chromium content ratio in the film. As shown in this figure, a reflectance of about 10 to 20% is obtained from a light-shielding film having a chromium content ratio of 47 at% or less, and the chromium content ratio in the film is from the viewpoint of performing defect inspection with high accuracy. It can be seen that it is preferable to design within a range of 47 at% or less.

  The chromium content can be controlled by the amount of reactive gas introduced during sputtering, but the lower limit value varies depending on the reactive gas species. For example, when the reactive gas is oxygen, the stoichiometric amount when the number of chromium loads is +3 is 40 at%, and the lower limit is 40 at%. However, the chromium content may be as small as about 35 at% as a measured value. The reason why the content is lower than the lower limit of the stoichiometric amount is considered to be because chromium can take a load other than +3.

FIG. 3 is a diagram for explaining the dependency of the dry etching rate on the chromium content ratio obtained from the clear time when the above light-shielding film is subjected to oxygen-containing chlorine-based dry etching. Here, the dry etching rate shown in this figure is expressed as an OD-converted dry etching rate. The film thickness for providing the light-shielding property necessary for chromium varies depending on the composition and layer structure of the chromium film. On the other hand, what is required for the mask performance is the light shielding property of the chromium film. Therefore, in order to estimate the time required to remove the chromium film formed so as to obtain the required light shielding property by dry etching, the dry etching rate in terms of OD was defined as follows. The dry etching rate in terms of OD is defined by a value obtained by dividing the OD of the chromium film by the dry etching time (that is, the OD conversion dry etching rate = the OD of the chromium film / the dry etching time (sec −1 )).

As apparent from FIG. 3, the etching rate of the light-shielding film having a Cr content ratio of 52 to 100 at% is about 0.0035 sec −1 , but when the Cr content ratio is approximately 50 at% or less, the OD conversion etch rate suddenly increases. Will improve. The effect becomes more pronounced as the wavelength is shorter, and a sufficient effect can be obtained if the wavelength is 248 nm or less. Conventionally, the design of the chromium light-shielding film has been designed with light (450 nm) transmitted through a blue filter. In this case, it was difficult to improve the OD conversion etch rate even if the Cr content was adjusted. However, in a chromium light-shielding film limited to a short wavelength region of 248 nm or less, it is possible to improve the OD conversion dry etch rate by appropriately adjusting the chromium composition. As described above, the chromium-based light-shielding film is reduced in chromium to be a light element-rich film, so that the etching rate during dry etching is increased and high-speed etching is possible.

  In designing a photomask blank, optical characteristics (an extinction coefficient k and a refractive index n) for adjusting an etching rate, an overall film thickness as a light-shielding film, and reflectivity and transmittance for light of a predetermined wavelength are within an appropriate range. However, in the present invention, the metal region (metal film) which is the main factor for reducing the etching rate of the light-shielding film is used as a constituent element. A light-shielding film is designed, or such a metal film is designed to be very thin and used only as a transmittance adjusting layer.

  As described above, the light-shielding film of the present invention is formed of a compound of chromium and a light element. As such a compound, in addition to chromium oxynitride (CrON), chromium oxide (CrO), There are chromium nitride (CrN), chromium oxycarbide (CrOC), chromium nitride carbide (CrNC), chromic oxynitride carbide (CrONC), etc., from the viewpoint of ease of film formation and control of optical properties It is preferable to set the nitrogen content in the range of 0 to 50 at%, the oxygen content in the range of 10 to 60 at%, and the carbon content in the range of 0 to 40 at%.

  The light-shielding film provided in the photomask blank of the present invention is composed of only a single layer having a low chromium content ratio as shown in FIG. 1, and a plurality of layers having different chromium content ratios are laminated. You may make it comprise.

  4 (b) and 4 (c) show changes in optical characteristics of a light-shielding film formed by laminating layers having different chromium content ratios (relatively high chromium layer and relatively low chromium layer). The light-shielding film A is a light-shielding film (illustrated in FIG. 1) composed of a single layer with a film thickness of 47 nm having a composition of 41 at% Cr · 46 at% O · 13 at% N. Each of the conductive films D and E is a light-shielding film having a configuration in which two layers (12a and 12b) having different chromium contents are laminated. The light-shielding film shown in FIG. 4A is the same film as the light-shielding film A shown in FIG.

  Here, the light-shielding film D shown in FIG. 4B has an upper layer 12b having a composition of 41 at% Cr · 46 at% O · 13 at% N and a film thickness of 20 nm and a composition of 43 at% Cr · 37 at% O · 20 at% N. A total thickness of 47 nm is formed by laminating a lower layer 12 a having a thickness of 27 nm, and the light-shielding film E shown in FIG. 4C has a thickness of 41 at% Cr · 46 at% O · 13 at% N. A 20 nm upper layer 12b and a 27 nm lower layer 12a having a composition of 45 at% Cr · 31 at% O · 24 at% N are laminated to have a total film thickness of 47 nm. That is, in both the light-shielding films D and E, the composition of the upper layer 12b is the same as that of the light-shielding film A, but the composition of the lower layer 12a is different from the composition of the upper layer.

  The high chromium layer and the low chromium layer are also films mainly composed of chromium oxide, chromium nitride, chromium oxynitride, chromium oxide carbide, chromium nitride carbide, or chromium oxynitride carbide. 4 illustrates only the two-layer structure, it goes without saying that a light-shielding film may be formed by stacking a plurality of films having different chromium content ratios. Furthermore, a laminated structure including a thin metal film as a transmittance adjusting layer may be used.

  As shown in FIGS. 4D and 4E, these films have approximately the same transmittance (T) for light in the vicinity of a wavelength of approximately 200 nm (193 nm) used for ArF exposure, and both are 2%. However, the transmittance (T: Transmittance) and reflectance (R: Reflectance) in the long wavelength region vary greatly depending on the configuration of the light-shielding film. The advantage of the light-shielding film having a laminated structure is that the light-shielding film can be designed by using the composition and film thickness of the upper and lower layers as parameters. This is because the degree of freedom in design is greatly increased as compared with the case of forming with a single composition film.

  Here, when the reflectance and transmittance of the light-shielding film D and the light-shielding film E are compared, there is no significant difference in the transmittance in the wavelength region of 200 to 600 nm of these films. The wavelength dependency of the reflectance in the wavelength region is greatly different, and the reflectance of the light shielding film E is about 5% lower than the reflectance of the light shielding film D. The behavior of such optical characteristics is that the transmittance is almost determined by the chromium content in the film, whereas the reflectance is the light reflection characteristics at the interface region between the upper and lower layers of the light-shielding film, that is, these This is because it depends on the difference (Δn) in the refractive index n of the layers. In other words, a light-shielding film having a desired reflectance can be obtained by appropriately selecting the difference in chromium content between the high chromium layer and the low chromium layer. From the viewpoint of the design of the photomask blank and the film formation process, it is easy to control the refractive index difference Δn when the difference in the chromium content of these layers is 5 at% or more.

  In addition, as in the example of the light-shielding film shown in FIGS. 4B and 4C, the low-chromium layer having a relatively low chromium content ratio is provided on the outermost surface layer to reflect the light-shielding film. This is to ensure the prevention effect. That is, the low chromium layer provided on the outermost surface of the light-shielding film functions as an antireflection film, and a light-shielding film having a low reflectance can be obtained. On the contrary, if a low chromium layer is provided on the substrate side, there is an advantage that it is easy to ensure etching uniformity within the surface when dry etching is performed.

  For such a light-shielding film, the composition and the laminated structure are appropriately selected so that the optical characteristics required for the photomask blank to be produced are obtained, but preferably the transmittance for exposure light is 0.01% or more. It is designed so that the reflectance with respect to light of 5% or less and wavelengths of 250 nm to 270 nm is 10% or more and 20% or less. In order to ensure high patterning accuracy, it is preferable to make the physical film thickness thin, and it is desirable to set the total film thickness of the light-shielding film to 100 nm or less, and more desirably, it is designed to be 80 nm. It is preferable to do.

  FIG. 5 is a diagram for explaining an example of the optical characteristics of the light-shielding film provided in the photomask blank of the present invention, and FIG. 5A is a schematic cross-sectional view for explaining the layer structure of various light-shielding films. FIG. 5B and FIG. 5C show the reflectance characteristics and the transmittance characteristics of these light-shielding films, respectively.

  Light-shielding film No. 1, 2, and 3 are obtained by laminating a first light element rich / low chromium composition film 12 a, a thin chromium metal film 13, and a second light element rich / low chromium composition film 12 b on a substrate 11. It has a structured structure. Here, the light-shielding film No. The difference in configuration between 1, 2, and 3 is only the thickness of the first light element rich / low chromium composition film 12a on the substrate 11 side (respective film formation times are 240 sec, 230 sec, and 200 sec). The thickness of the second light element rich / low chromium composition film 12b on the side (deposition time 240 sec) and the thickness of the chromium metal film 13 (deposition time 66 sec) are generally constant. Note that the reference sample (Ref. 1) is a light-shielding film of only the light element-rich and low-chromium film 12 (the film thickness is 540 sec in film formation time). The light element rich and low chromium composition films shown in these drawings are chromic oxynitride films (CrON films) as described in FIG.

  As shown in FIG. 5C, the light-shielding film (Ref. 1) having only the light element-rich and low-chromium film 12 has a light-shielding film as compared with the conventional chromium-based light-shielding film. Corresponding to the fact that the chromium content ratio in the inside is greatly reduced, the attenuation coefficient k is reduced, and as a result, the transmittance T is increased and the light shielding property is lowered. Therefore, in order to ensure a sufficient light-shielding property only with such a light element rich / low chromium composition film 12, the film thickness must be increased.

  On the other hand, the light-shielding film No. When the films 12a and 12b having a light element rich and low chromium composition and the thin chromium metal film 13 are laminated as in 1 to 3, the thin chromium metal film 13 can ensure sufficient light shielding properties. become able to. That is, the thin chromium metal film 13 can be used as a transmittance adjusting layer of the light shielding film.

  Further, according to the result shown in FIG. 5B, the reflectance of the light-shielding film is lowered by laminating the light element rich and low chromium composition films 12a and 12b and the thin chromium metal film 13. Can be made. This is because the light-shielding film of the present invention formed by laminating the light element-rich film 12 having a low chromium composition and the thin chromium metal film 13 has high reflectivity while keeping the reflectance low. This means that it is possible to facilitate the film design that ensures the light shielding property as the light shielding film.

  When the light-shielding film is formed by laminating the light element rich / low chromium composition film 12 and the thin chromium metal film 13 as in the present invention, in addition to the above-mentioned advantages in optical characteristic design, the laminated film It is possible to obtain both the stress relaxation effect and the conductivity improvement effect.

  Among these effects, the stress relaxation effect of the laminated film is as follows. That is, by combining the high chromium layer (metal film) and the low chromium layer, the film stress of the light shielding film can be controlled. Usually, the high chromium layer shows tensile stress, and the low chromium layer shows compressive stress. Therefore, by appropriately combining the high chromium layer and the low chromium layer, the film stress of the entire light shielding property can be made close to zero. . For example, when the low chromium layer is 30 to 45 nm and the high chromium layer is 5 to 20 nm, the stress of the light shielding film can be sufficiently reduced.

In general, the light-shielding film is required to have a conductivity of about 1 kΩ / □, but a practically sufficient conductivity can be obtained by using the thin chromium metal film 13 as a constituent element. For example, a light-shielding film composed of a single layer film of the reference sample (Ref. 1) has a sheet resistance of about 5 × 10 6 Ω / □, but No. 1 in FIG. With the light-shielding film having the configuration of 1, a sheet resistance as low as about 100Ω / □ can be realized.

  FIG. 6 is a diagram for explaining the relationship between the position of the chromium metal film in the light-shielding film provided with the chromium metal film as the transmittance adjusting layer and the reflectance of the light-shielding film. FIG. 6A is a schematic cross-sectional view for explaining various laminated structures with different positions of the chromium metal film in the light shielding film, and FIG. 6B is a reflectance characteristic of these light shielding films. For comparison, the reflectance of the light-shielding film (Ref. 2) composed of only the light element rich and low chromium composition film is also shown.

  Here, the light element rich / low chromium composition film shown in these drawings is a chromic oxynitride film (CrON film) as described with reference to FIG. 4, 5, and 6 are different from each other in the thickness of the first light element rich / low chromium composition film 12 a on the substrate 11 side (deposition times of 250 sec, 200 sec, and 150 sec, respectively) and the second on the surface side. The light element rich / low chromium composition film 12b has a thickness (deposition time of 150 sec, 200 sec, 250 sec, respectively), and the chromium metal films included in these light-shielding films all have substantially the same thickness (deposition time of 100 sec). It is said that. The light-shielding film No. 4 to 6 and the reference sample (Ref. 2) are formed so as to have substantially the same total film thickness (film formation time of 500 sec).

  As shown in this figure, the reflectance of the light-shielding film varies depending on the position where the chromium metal film 13 is provided, and the reflectance tends to decrease as the chromium metal film 13 is provided closer to the substrate 11 side. This is due to the light interference effect.

  Here, the wavelength at which the reflectance of the light-shielding film is minimized depends on the optical distance (proportional to the film thickness) of the light element rich / low chromium composition film 12b. For example, when the light element rich / low chromium composition film 12b is thickened (No. 6 film), the wavelength at which the reflectance is minimized becomes longer, and conversely, when the light element rich / low chromium composition film 12b is thinned (No. .4 film) The wavelength at which the reflectance is minimized is shortened. In this way, by adjusting the film thickness of the light element rich / low chromium composition film 12b, it is possible to obtain an arbitrary reflectance characteristic.

  FIG. 7 is a diagram for explaining that the reflectance of the light-shielding film of the present invention is dominantly determined by the light element rich / low chromium composition film provided on the surface side. FIG. FIG. 7B is a schematic cross-sectional view for explaining the layer structure of each light shielding film, and FIG. 7B shows the reflectance characteristics of these light shielding films. The light element rich and low chromium composition films shown in these figures are also chromic oxynitride films (CrON films).

  The total thickness of the light-shielding film exemplified here is 500 sec in terms of the film formation time. 5 is the film thickness of the light element rich / low chromium composition film 12a on the substrate side (in terms of film formation time) 200 sec, the film thickness of the chromium metal film 13 (in terms of film formation time) 100 sec, and the light element rich / low chromium on the surface side. The film thickness of the composition film 12b (in terms of film formation time) is 200 sec. 7 is the film thickness of the light element rich / low chromium composition film 12a on the substrate side (deposition time conversion) 150 sec, the film thickness of the chromium metal film 13 (equivalent to film formation time) 100 sec, and the light element rich / low chromium film on the surface side. The film thickness of the composition film 12b (deposition time conversion) is 250 sec. 8 is the film thickness of the light element rich / low chromium composition film 12a on the substrate side (in terms of film formation time) 200 sec, the film thickness of the chromium metal film 13 (in terms of film formation time) 150 sec, and the light element rich / low chromium on the surface side. The film thickness of the composition film 12b (deposition time conversion) is 150 sec.

  As shown in this figure, the reflectance of the light-shielding film of the present invention is determined predominantly by the film thickness of the light element rich / low chromium composition film 12b provided on the surface side. It can be seen that the film thickness of the chromium metal film 13 provided between the composition films 12a and 12b is not significantly affected.

  FIG. 8 is a diagram for explaining a configuration example and effects of a light-shielding film provided with a plurality of chromium metal films as transmittance adjusting films. Illustrated here are a light-shielding film (No. 4 and No. 9) provided with only one layer of chromium metal film and a light-shielding film (No. 10 and No. 11) provided with two layers of chromium metal film. (FIG. 8A), and the reflectance characteristics of these light-shielding films are shown in FIG. 8B. The light element rich and low chromium composition films shown in these figures are also chromic oxynitride films (CrON films).

  The total thickness of the light-shielding films exemplified here is 500 sec in terms of film formation time. 4 is a film thickness of the light element rich / low chromium composition film 12a on the substrate side (in terms of film formation time) 250 sec, a film thickness of the chromium metal film 13 (in terms of film formation time) 100 sec, and a light element rich / low chromium on the surface side. The film thickness of the composition film 12b (deposition time conversion) is 150 sec. 9 is the film thickness of the light element rich / low chromium composition film 12a on the substrate side (in terms of film formation time) 200 sec, the film thickness of the chromium metal film 13 (in terms of film formation time) 150 sec, and the light element rich / low chromium on the surface side. The film thickness of the composition film 12b (deposition time conversion) is 150 sec.

  Further, the light-shielding film No. 10 is a film side of the light element rich / low chromium composition film 12a on the substrate side (in terms of film formation time) 200 sec, a film thickness of the chromium metal film 13a on the substrate side (in terms of film formation time) 50 sec, and a surface side of the film thickness 50 sec. Film thickness of light element rich / low chromium composition film 12c sandwiched between chromium metal films 13b (deposition time) 50 sec, film thickness of light element rich / low chromium composition film 12b on the surface side (deposition time conversion) 150 sec It is.

  Further, the light-shielding film No. No. 11 is a film thickness of the light element rich / low chromium composition film 12a on the substrate side (in terms of film formation time) 75 sec, film thickness of the chromium metal film 13a on the substrate side (in terms of film formation time) 50 sec, film thickness (film formation time) (Conversion) Film thickness of light element rich / low chromium composition film 12c sandwiched between 50 sec surface side chromium metal film 13b (deposition time conversion) 175 sec, film thickness of light element rich / low chromium composition film 12b (surface conversion) (Deposition time) 150 sec.

  As shown in this figure, when a plurality of chromium metal films as the transmittance adjusting film are provided, the reflectivity of the light-shielding film decreases, and the degree of the decrease in reflectivity is the distance between the two chromium metal films (light elements). The film thickness of the rich / low chromium composition film 12c).

  Here, when a plurality of chromium metal films are provided to form a light-shielding film for ArF exposure, the distance between these chromium metal films (that is, the film thickness of the light element rich / low chromium composition film sandwiched between them) ) Is preferably 3 nm or more and 30 nm or less. This is because light having a wavelength of 193 nm between the chromium metal films generates a standing wave and is attenuated in the film, and the light shielding property can be improved by reducing the transmittance of the light shielding film.

(Basic structure of photomask blank)
FIG. 9A is a schematic cross-sectional view for explaining an example of the structure of the photomask blank of the present invention. A light-shielding film 12 is provided on one main surface of a transparent substrate 11 such as quartz as a photomask substrate. ing. The light-shielding film 12 has the layer structure described in the first embodiment and can be a so-called “light-shielding film” as well as a film that also serves as an antireflection film. The reason why the film has such a composition is that it has excellent characteristics such as dry etching characteristics, conductivity, and chemical resistance.

  When the photomask blank of the present invention is used for preparing a mask for ArF exposure, the optical density OD of the light-shielding film 12 is a value in the range of 2.5 to 3.5 with respect to light having a wavelength of 193 nm. Thus, the film thickness and composition are selected. In order to obtain such an optical density OD, the film thickness may be set in the range of 50 nm to 80 nm, but in order to improve the patterning accuracy by shortening the dry etching time, the film thickness is 50 nm to 70 nm. It is desirable to set to.

  Further, when the mask for KrF exposure is manufactured, the film thickness is set so that the optical density OD of the light-shielding film 12 is a value in the range of 2.5 to 3.5 with respect to light having a wavelength of 248 nm. A composition is selected. In order to obtain such an optical density OD, the film thickness may be set in the range of 60 nm to 100 nm, but in order to improve the patterning accuracy by shortening the dry etching time, the film thickness is 60 nm to 90 nm. It is desirable to set to.

  When the light-shielding film 12 is configured as a multilayer film in which a plurality of films having different optical characteristics are laminated as shown in FIG. 9B, for example, chromium oxide or The content ratio (at%) of oxygen, nitrogen, and carbon in the film in the range of 0.5 to 1.0 nm from the surface of the outermost layer is made of chromium nitride or chromic oxynitride. It is preferable to select the composition such that the ratio> the nitrogen content ratio> the carbon content ratio. The thickness of the outermost layer is preferably in the range of 10 to 25 nm. Furthermore, when the photomask blank of the present invention is used for preparing a mask for ArF exposure, the extinction coefficient k of the outermost layer of the multilayer film is in the range of 1.0 to 1.5 for light with a wavelength of 193 nm. It is preferable to select the composition so as to be a value.

  As described above, the reflectance at the inspection wavelength (250 to 270 nm) can be easily controlled, and a sufficient OD conversion dry etching rate can be secured. Further, the basicity of the surface of the light-shielding film becomes appropriate, and the influence of the chemically amplified resist on the photoacid generator is reduced, so that the resist patterning accuracy can be kept good.

  The basic structure of the photomask blank of the present invention is as described above, but a photomask blank in which a chemically amplified photoresist film is previously provided on the light-shielding film 12 may be used. Here, the reason why the photoresist is of a chemical amplification type is that it is highly sensitive and suitable for forming a fine pattern. In this case, the chemically amplified photoresist film is formed by coating with a film thickness of 250 nm or less.

  The reason why such a film thickness is set is that the resist film for producing a photomask for ArF exposure that requires fine pattern formation is required to be relatively thin so that the aspect ratio does not increase. is there. Also, in principle, better resolution can be obtained by using a thinner resist film. On the other hand, if the resist pattern is damaged during etching, the pattern fidelity is lowered. In the case of a light-shielding film that can be etched, the etching time can be shorter than that of the conventional film, so that the resist film can be made thin, and a good processing accuracy can be obtained by using a resist film of 200 nm or less. it can. The lower limit of the thickness of the resist film is determined by comprehensively considering conditions such as etching resistance of the resist material to be used, but is generally preferably 75 nm or more, more preferably 100 nm or more. .

  The chemically amplified resist used may be either positive or negative, and a known resist, particularly one using a material having an aromatic skeleton in the polymer is preferably used.

  In the present invention, coating properties are very important, and a surfactant is added (contained) at a content ratio of, for example, 10 to 1000 ppm in the photoresist for forming a chemically amplified photoresist film, and the solid content The content ratio of is adjusted to be 10% by weight or less of the amount of the organic solvent. The surfactant added to the chemically amplified photoresist includes a surfactant component having a fluorine substituent, and a nonionic surfactant component having neither a fluorine substituent nor a silicon-containing substituent. It may be a thing, and may mix and use these.

(First example of photomask blank and patterning process)
FIG. 10 and FIG. 11 are respectively for explaining a configuration example of a film forming apparatus (sputtering apparatus) used for manufacturing the halftone photomask blank of the present invention and an example of process steps when patterning the photomask blank. FIG.

  In FIG. 10, reference numeral 11 denotes a transparent substrate which is a 6-inch square quartz substrate. In general, a quartz substrate whose surface and end face are precisely polished is used. 101 is a chamber, 102a is a first target, 102b is a second target, 103 is a sputter gas introduction port, 104 is a gas exhaust port, 105 is a substrate turntable, and 106a and 106b are first and second targets, respectively. This is a power source for applying a bias to the power source.

Both the first target 102a and the second target 102b are made of chromium metal, and a light-shielding film is formed. First, a mixed gas of 15 sccm Ar gas, 30 sccm N 2 gas and 15 sccm O 2 gas is introduced into the chamber 101 as a sputtering gas, and the gas pressure in the chamber is set to 0.1 Pa. A discharge power of 500 W and 500 W was applied to the second targets 102a and 102b, respectively, and a CrON film 70 nm having a chromium content of 50 at% or less in terms of atomic ratio was formed while rotating the substrate 11 at 30 rpm.

The film forming conditions for such a light-shielding film can be variously changed according to the film composition and the laminated structure design. For example, in the case of forming a CrONC film, as a sputtering gas, a gas containing carbon such as CH 4 , CO 2 and CO, a gas containing nitrogen such as NO, NO 2 and N 2 , and CO 2 , NO, One or more gases each containing oxygen such as O 2 may be introduced, or a gas obtained by mixing an inert gas such as Ar, Ne, or Kr may be used. In particular, from the viewpoint of substrate in-plane uniformity and controllability during production, it is preferable to use CO 2 gas or CO gas as the carbon source and oxygen source gas. As a gas introduction method, various sputtering gases may be separately introduced into the chamber, or some gases may be introduced together or all gases may be mixed.

  A preferable composition in the case of a CrON film having a chromium content of 50 at% or less by atomic ratio is Cr of 40 to 50 atomic%, N of 10 to 35 atomic%, and O of 25 to 50 atomic%. More preferably, Cr is 40 to 45 atomic%, N is 15 to 30 atomic%, and O is 30 to 50 atomic%. A preferable composition in the case of a CrONC film having a chromium content of 50 at% or less in terms of atomic ratio is as follows: Cr is 40 to 50 atomic%, N is 10 to 35 atomic%, O is 25 to 50 atomic%, and C is 5 to 5 atomic%. More preferably, Cr is 40 to 45 atom%, N is 15 to 30 atom%, O is 30 to 50 atom%, and C is 5 to 15 atom%.

  For patterning when producing a mask using the photomask blank of the present invention, first, a light-shielding film 12 having the composition and film thickness described in Example 1 and Example 2 is sequentially laminated on the transparent substrate 11. On the main surface of the mask blank, a chemically amplified photoresist film 14 is formed by coating with a film thickness of 250 nm or less (FIG. 11A). Since the normal photoresist film thickness is about 300 nm, the film thickness of 250 nm is reduced by about 17%. As already described, it is also possible to handle a state in which such a chemically amplified photoresist film 14 is applied as a “photomask blank”.

  Here, prior to the formation of the photoresist film 14, the surface energy of the coating surface (the surface of the light-shielding film 12) is reduced for the purpose of preventing the occurrence of problems such as peeling and falling of a fine pattern in a later process. It is preferable to carry out a surface treatment to keep it. As a preferable method of such surface treatment, there is a method in which the photomask substrate surface is alkylsilylated with hexamethyldisilazane (HMDS) or other organic silicon-based surface treatment agent commonly used in the semiconductor manufacturing process. The surface may be exposed to such a surface treatment agent gas, or the surface treatment agent may be directly applied to the substrate surface.

  A resist pattern is formed on the photoresist film 14 (FIG. 11B), and the light-shielding film 12 is patterned by oxygen-containing chlorine-based dry etching using the obtained resist pattern as a mask (FIG. 11C). Finally, the remaining photoresist film 14 is removed to obtain a photomask (FIG. 11D).

  In this embodiment, since the clear time of the light-shielding film 12 (in chlorine + oxygen-based dry etching) is 300 seconds, the clear time can be greatly shortened compared to the clear time of 480 seconds of the conventional light-shielding film. It has been realized. In addition, when the photoresist (mask) after dry etching was checked with a scanning electron microscope, the mask pattern was not deteriorated, and it was confirmed that damage to the photoresist was reduced by shortening the clear time. It was.

(Photomask blank and second example of patterning process)
This embodiment will also be described with reference to FIGS. The structure of the film forming apparatus (sputtering apparatus) is as described above, and the substrate used is a transparent substrate that is a 6-inch square quartz substrate.

Both the first target 102a and the second target 102b are made of chromium metal, and a light-shielding film is formed on the translucent film. First, a mixed gas of 15 sccm Ar gas, 30 sccm N 2 gas and 15 sccm O 2 gas is introduced into the chamber 101 as a sputtering gas, and the gas pressure in the chamber is set to 0.1 Pa. A discharge power of 500 W and 500 W was applied to the second targets 102a and 102b, respectively, and a CrON film having a thickness of 30 nm was formed while rotating the substrate 11 at 30 rpm.

  Next, Ar gas of 30 sccm is introduced into the chamber 101 to set the gas pressure in the chamber to 0.1 Pa, and discharge powers of 500 W and 500 W are respectively applied to the first and second targets 102a and 102b. A 15 nm-thick Cr film was formed while applying and rotating the substrate 11 at 30 rpm.

Further, a mixed gas of 15 sccm of Ar gas, 30 sccm of N 2 gas and 15 sccm of O 2 gas is introduced into the chamber 101 so that the gas pressure in the chamber is set to 0.1 Pa. A chromium compound having a chromium content of 50 at% or less in atomic ratio is formed by applying discharge power of 500 W and 500 W to the targets 102a and 102b, respectively, and forming a CrON film with a film thickness of 25 nm while rotating the substrate 11 at 30 rpm. A light-shielding film having a total thickness of 70 nm was formed, accounting for 70% or more of the total film thickness.

The film forming conditions for such a light-shielding film can be variously changed according to the film composition and the laminated structure design. For example, in the case of forming a CrONC film, as a sputtering gas, a gas containing carbon such as CH 4 , CO 2 and CO, a gas containing nitrogen such as NO, NO 2 and N 2 , and CO 2 , NO, One or more gases each containing oxygen such as O 2 may be introduced, or a gas obtained by mixing an inert gas such as Ar, Ne, or Kr may be used. In particular, from the viewpoint of substrate in-plane uniformity and controllability during production, it is preferable to use CO 2 gas or CO gas as the carbon source and oxygen source gas. As a gas introduction method, various sputtering gases may be separately introduced into the chamber, or some gases may be introduced together or all gases may be mixed.

  A preferable composition in the case of a CrON film having a chromium content of 50 at% or less by atomic ratio is Cr of 40 to 50 atomic%, N of 10 to 35 atomic%, and O of 25 to 50 atomic%. More preferably, Cr is 40 to 45 atomic%, N is 15 to 30 atomic%, and O is 30 to 50 atomic%. A preferable composition in the case of a CrONC film having a chromium content of 50 at% or less in terms of atomic ratio is as follows: Cr is 40 to 50 atomic%, N is 10 to 35 atomic%, O is 25 to 50 atomic%, and C is 5 to 5 atomic%. More preferably, Cr is 40 to 45 atom%, N is 15 to 30 atom%, O is 30 to 50 atom%, and C is 5 to 15 atom%.

  For patterning when producing a mask using the photomask blank of the present invention, first, a photomask in which the light-shielding film 12 having the composition and film thickness described in Example 1 and Example 2 is formed on the transparent substrate 11. On the main surface of the blank, a chemically amplified photoresist film 14 is formed by coating with a film thickness of 250 nm or less (FIG. 11A). Since the normal photoresist film thickness is about 300 nm, the film thickness of 250 nm is reduced by about 17%. As already described, it is also possible to handle a state in which such a chemically amplified photoresist film 14 is applied as a “photomask blank”.

  Here, prior to the formation of the photoresist film 14, the surface energy of the coating surface (the surface of the light-shielding film 12) is reduced for the purpose of preventing the occurrence of problems such as peeling and falling of a fine pattern in a later process. It is preferable to carry out a surface treatment to keep it. As a preferable method of such surface treatment, there is a method in which the photomask substrate surface is alkylsilylated with hexamethyldisilazane (HMDS) or other organic silicon-based surface treatment agent commonly used in the semiconductor manufacturing process. The surface may be exposed to such a surface treatment agent gas, or the surface treatment agent may be directly applied to the substrate surface.

  A resist pattern is formed on the photoresist film 14 (FIG. 11B), and the light-shielding film 12 is patterned by oxygen-containing chlorine-based dry etching using the obtained resist pattern as a mask (FIG. 11C). Finally, the remaining photoresist film 14 is removed to obtain a photomask (FIG. 11D).

  In this embodiment, since the clear time of the light-shielding film 12 (in chlorine + oxygen-based dry etching) is 300 seconds, the clear time can be greatly shortened compared to the clear time of 480 seconds of the conventional light-shielding film. It has been realized. In addition, when the photoresist (mask) after dry etching was checked with a scanning electron microscope, the mask pattern was not deteriorated, and it was confirmed that damage to the photoresist was reduced by shortening the clear time. It was.

  As mentioned above, although the photomask blank of this invention and the photomask produced using this were demonstrated by the Example, the said Example is only an example for implementing this invention, This invention is limited to these. It is not a thing. It is obvious from the above description that various modifications of these embodiments are within the scope of the present invention, and that various other embodiments are possible within the scope of the present invention.

  The present invention provides a photomask in which a fine photomask pattern is formed with high accuracy and a photomask blank for producing the photomask.

(A) thru | or (c) is a cross-sectional schematic diagram for demonstrating the structural example of the light shielding film provided in the photomask blank of this invention, (d) is the optical characteristic (reflectance and transmission) of these light shielding films. It is a figure for demonstrating the composition dependence (chromium content ratio dependence) of a ratio. It is a figure for demonstrating the chromium content ratio dependence in the film | membrane of the reflectance with respect to the light of wavelength 257nm used for the defect inspection of a photomask blank. It is a figure for demonstrating the chromium content ratio dependence of the dry etching rate calculated | required from the clear time at the time of performing oxygen-containing chlorine-type dry etching of the light-shielding film. (A) thru | or (c) is a cross-sectional schematic for demonstrating the structural example of the light-shielding film | membrane provided in the photomask blank of this invention, (d) and (e) are the reflectance of these light-shielding films, respectively. It is a figure for demonstrating the wavelength dependence of (Reflectance) and the transmittance | permeability (Transmittance). It is a figure for demonstrating the optical characteristic example of the light-shielding film with which the photomask blank of this invention is equipped, (a) is a cross-sectional schematic diagram for demonstrating the layer structure of various light-shielding films, (b) and (c) ) Are the reflectance characteristics and the transmittance characteristics of these light-shielding films. It is a figure for demonstrating the relationship between the position of the said chromium metal film in the light shielding film provided with the chromium metal film as a transmittance | permeability adjusting layer, and the reflectance of a light shielding film, (a) is a light shielding film The cross-sectional schematic for demonstrating the various laminated structure from which the chromium metal film | membrane position differs in (b) is the reflectance characteristic of these light shielding films. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure for demonstrating that the reflectance of the light shielding film of this invention is dominantly determined by the light element rich and low chromium composition film | membrane provided in the surface side, (a) is a layer of each light shielding film A schematic cross-sectional view for explaining the structure, (b) shows the reflectance characteristics of these light-shielding films. It is a figure for demonstrating the example of a structure and effect of the light-shielding film which provided multiple chromium metal films as a transmittance | permeability adjustment film | membrane. It is the cross-sectional schematic for demonstrating the structural example of the photomask blank of this invention. It is a figure for demonstrating the structural example of the film-forming apparatus (sputtering apparatus) used for preparation of the photomask blank of this invention. It is a figure for demonstrating the example of a process process at the time of patterning to the photomask blank of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Transparent substrate 12 Light-shielding film 13 Chromium metal film 14 Chemical amplification type photoresist film 101 Chamber 102a 1st target 102b 2nd target 103 Sputter gas introduction port 104 Gas exhaust port 105 Substrate turntable 106a, 106b Power supply


Claims (21)

  1. A photomask blank having a light-shielding film against exposure light on a transparent substrate,
    The light-shielding film has an overall film thickness of 100 nm or less, and an optical density (OD) per unit film thickness with respect to light having a wavelength of 450 nm is 7025 nm −1 or less. A photomask blank characterized by occupying at least%.
  2. The photomask blank according to claim 1, wherein the total thickness of the light-shielding film is 80 nm or less.
  3. 3. The photomask blank according to claim 1, wherein the light-shielding film has a chromium-based compound having a chromium content of 50 at% or less in atomic ratio and occupies 70% or more of the total film thickness.
  4. The light-shielding film includes a chromium metal film having a chromium content of 50 at% or more in atomic ratio, and first and second chromium-based compound films having a chromium content of 50 at% or less in atomic ratio,
    4. The photo according to claim 1, wherein the chromium metal film is provided between the first chromium-based compound film and the second chromium-based compound film. 5. Mask blank.
  5. The light-shielding film includes first and second chromium metal films having a chromium content of 50 at% or more in atomic ratio, and first, second, and third chromium having a chromium content of 50 at% or less in atomic ratio. System compound film,
    The first chromium metal film is provided between the first chromium compound film and the second chromium compound film, and the second chromium metal film is formed between the second chromium compound film and the second chromium compound film. The photomask blank according to any one of claims 1 to 4, wherein the photomask blank is provided between the third chromium-based compound film and the third chromium-based compound film.
  6. 6. The photomask blank according to claim 4, wherein a film thickness of the second chromium-based compound film is in a range of 3 to 30 nm.
  7. The photomask blank according to any one of claims 1 to 6, wherein the light-shielding film has a reflectance of 30% or less with respect to light having a wavelength of 250 nm to 270 nm.
  8. The photomask blank according to claim 1, wherein the light-shielding film has an antireflection function.
  9. The photomask blank according to any one of claims 1 to 8, wherein an optical density (OD) of the light-shielding film is 2.5 to 3.5 with respect to light having a wavelength of 193 nm.
  10. The photomask blank according to any one of claims 1 to 8, wherein an optical density (OD) of the light-shielding film is 2.5 to 3.5 with respect to light having a wavelength of 248 nm.
  11. The said light-shielding film | membrane is a multilayer film which laminated | stacked the several film | membrane, and the film thickness of the outermost layer of this multilayer film is 10-40 nm, The any one of Claim 1 thru | or 10 characterized by the above-mentioned. Photomask blank.
  12. The light-shielding film is a multilayer film in which a plurality of films having different optical characteristics are laminated, and the extinction coefficient (k) of the outermost layer of the multilayer film is 1.0-1. The photomask blank according to any one of claims 1 to 11, wherein the photomask blank is 5.
  13. The light-shielding film is a multilayer film in which a plurality of films having different optical properties are laminated, and the main constituent material of the outermost layer of the multilayer film is chromium oxide, chromium nitride, or chromium oxynitride. The content ratio (at%) of oxygen, nitrogen, and carbon in the film in a depth range of 0.5 to 1.0 nm from the surface of the surface layer is in a relationship of oxygen content ratio> nitrogen content ratio> carbon content ratio. The photomask blank according to claim 1, wherein the photomask blank is a photomask blank.
  14. The photomask blank according to any one of claims 1 to 13, further comprising a chemically amplified photoresist film having a thickness of 250 nm or less on the light-shielding film.
  15. 15. The chemical amplification type photoresist film is a coating film of a chemical amplification type photoresist having a solid content ratio of 10% by weight or less of the amount of an organic solvent and containing a surfactant. The photomask blank described in 1.
  16. The photomask blank according to claim 15, wherein a content ratio of the surfactant in the chemically amplified photoresist is 10 to 1000 ppm.
  17. The photomask blank according to claim 15 or 16, wherein the surfactant contains a surfactant component having a fluorine substituent.
  18. 17. The photomask blank according to claim 15, wherein the surfactant includes a nonionic surface active component having neither a fluorine substituent nor a silicon-containing substituent.
  19. The photomask produced using the photomask blank of any one of Claims 1 thru | or 18.
  20. A photomask blank manufacturing method comprising a step of applying a chemically amplified photoresist film having a thickness of 250 nm or less to the surface of the photomask blank according to any one of claims 1 to 13. Method.
  21. A method for producing a photomask, comprising a step of applying a chemically amplified photoresist film having a thickness of 250 nm or less to the surface of the photomask blank according to claim 1. .


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JP2005211942A JP4933754B2 (en) 2005-07-21 2005-07-21 Photomask blank, photomask, and manufacturing method thereof
DE200660021102 DE602006021102D1 (en) 2005-07-21 2006-06-29 Photomask blank, photomask and their manufacturing process
EP20060013457 EP1746460B1 (en) 2005-07-21 2006-06-29 Photomask blank, photomask and fabrication method thereof
PCT/JP2006/314258 WO2007010935A1 (en) 2005-07-21 2006-07-19 Photo mask blank, photo mask, and their fabrication method
CN201210160739.XA CN102654730B (en) 2005-07-21 2006-07-20 Photomask blank, photomask and fabrication method thereof
CN201310724734.XA CN103809369B (en) 2005-07-21 2006-07-20 Photo blanks, photomask and preparation method thereof
TW103135044A TWI548931B (en) 2005-07-21 2006-07-20 Photomask blank, photomask and fabrication method thereof
US11/489,477 US7771893B2 (en) 2005-07-21 2006-07-20 Photomask blank, photomask and fabrication method thereof
TW095126577A TWI480678B (en) 2005-07-21 2006-07-20 Photomask blank, photomask and fabrication method thereof
CN200610107711.4A CN1900819B (en) 2005-07-21 2006-07-20 Photomask blank, photomask and fabrication method thereof
KR1020060068275A KR101207724B1 (en) 2005-07-21 2006-07-21 Photomask blank, photomask and fabrication method thereof

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