JP2006344748A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000000137 annealing Methods 0.000 claims abstract description 140
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 101
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000003990 capacitor Substances 0.000 claims abstract description 46
- 238000004220 aggregation Methods 0.000 claims abstract description 43
- 230000002776 aggregation Effects 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000003870 refractory metal Substances 0.000 claims description 51
- 239000012298 atmosphere Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052710 silicon Inorganic materials 0.000 abstract description 23
- 239000010703 silicon Substances 0.000 abstract description 23
- 230000008569 process Effects 0.000 abstract description 12
- 238000002844 melting Methods 0.000 abstract description 6
- 230000008018 melting Effects 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 199
- 239000010410 layer Substances 0.000 description 102
- 229910017052 cobalt Inorganic materials 0.000 description 52
- 239000010941 cobalt Substances 0.000 description 52
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 52
- 229910052814 silicon oxide Inorganic materials 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- 239000011229 interlayer Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 16
- 238000011084 recovery Methods 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 238000011835 investigation Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 230000015654 memory Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000003963 antioxidant agent Substances 0.000 description 6
- 230000003078 antioxidant effect Effects 0.000 description 6
- 239000003292 glue Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000003064 anti-oxidating effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013039 cover film Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000005156 Dehydration Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】 シリコン基板10の一部領域に高融点金属シリサイド層13a〜13cを形成する工程と、高融点金属シリサイド層13a〜13cの上に層間絶縁膜21を形成する工程と、層間絶縁膜21の上に、第1導電膜31、強誘電体膜32、及び第2導電膜33を順に形成する工程と、第1導電膜33、強誘電体膜32、及び第2導電膜31をパターニングすることにより、下部電極31a、キャパシタ誘電体膜32a、及び上部電極33aで構成されるキャパシタQを形成する工程と、高融点金属シリサイド層13a〜13cの凝集面積が上限面積以下となるようなアニール時間でアニールを行う工程と、
を有する半導体装置の製造方法による。
【選択図】 図4
Description
前記高融点金属シリサイド層の上に絶縁膜を形成する工程と、
前記絶縁膜の上に、第1導電膜、強誘電体膜、及び第2導電膜を順に形成する工程と、
前記第1導電膜、前記強誘電体膜、及び前記第2導電膜をパターニングすることにより、下部電極、キャパシタ誘電体膜、及び上部電極で構成されるキャパシタを形成する工程と、
前記高融点金属シリサイド層の凝集面積が上限面積以下となるようなアニール時間でアニールを行う工程と、
を有することを特徴とする半導体装置の製造方法。
前記高融点金属シリサイド層を形成する工程において、前記ソース/ドレイン上に該高融点金属シリサイド層を形成することを特徴とする付記1に記載の半導体装置の製造方法。
Claims (10)
- 半導体基板の一部領域に高融点金属シリサイド層を形成する工程と、
前記高融点金属シリサイド層の上に絶縁膜を形成する工程と、
前記絶縁膜の上に、第1導電膜、強誘電体膜、及び第2導電膜を順に形成する工程と、
前記第1導電膜、前記強誘電体膜、及び前記第2導電膜をパターニングすることにより、下部電極、キャパシタ誘電体膜、及び上部電極で構成されるキャパシタを形成する工程と、
前記高融点金属シリサイド層の凝集面積が上限面積以下となるようなアニール時間でアニールを行う工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記アニール時間は、前記高融点金属シリサイド層の凝集面積とアニール時間との関係を示す第1のグラフを用いて、前記上限面積に対応するアニール時間の上限時間を求め、該上限時間以下の時間とされることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記高融点金属シリサイド層を形成する前に、前記半導体基板の前記一部領域にMOSトランジスタのソース/ドレイン領域を形成する工程を有し、
前記高融点金属シリサイド層を形成する工程において、前記ソース/ドレイン上に該高融点金属シリサイド層を形成することを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記上限面積として、前記高融点金属シリサイド層と前記ソース/ドレイン領域とを合わせた抵抗値が上限抵抗値以下となる面積を採用することを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記高融点金属シリサイド層の凝集面積とアニール時間との関係を示す第1のグラフと、前記高融点金属シリサイド層と前記ソース/ドレイン領域とを合わせた抵抗値とアニール時間との関係を示す第2のグラフとを用いることにより、前記上限抵抗値に対応する前記凝集面積の値を求め、該値を前記上限面積とすることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記凝集面積として、前記高融点金属シリサイド層に発生する複数の凝集部分の面積のメジアンを採用することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記上限面積として、0.008μm2を採用することを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記アニールを行う工程は、前記キャパシタ誘電体膜を形成した後に、該キャパシタ誘電体膜に対してファーネスを用いて行われることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記アニールを行う工程は、前記強誘電体膜をパターニングする前に、該強誘電体膜を急速熱処理して行われることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記アニールを行う工程は、酸素含有雰囲気中で行われることを特徴とする請求項1に記載の半導体装置の製造方法。
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JP2005168603A JP5005190B2 (ja) | 2005-06-08 | 2005-06-08 | 半導体装置の製造方法 |
US11/235,362 US7338815B2 (en) | 2005-06-08 | 2005-09-27 | Semiconductor device manufacturing method |
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Cited By (1)
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JP2009026920A (ja) * | 2007-07-19 | 2009-02-05 | Seiko Epson Corp | 半導体装置の製造方法及び合わせマークの形成方法、半導体装置 |
Families Citing this family (1)
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KR101030765B1 (ko) * | 2007-02-27 | 2011-04-27 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 기억 장치, 반도체 기억 장치의 제조 방법, 및 패키지 수지 형성 방법 |
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