JP2006339691A - 圧電薄膜弾性波素子及びこれを用いた情報処理装置 - Google Patents
圧電薄膜弾性波素子及びこれを用いた情報処理装置 Download PDFInfo
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- JP2006339691A JP2006339691A JP2005158300A JP2005158300A JP2006339691A JP 2006339691 A JP2006339691 A JP 2006339691A JP 2005158300 A JP2005158300 A JP 2005158300A JP 2005158300 A JP2005158300 A JP 2005158300A JP 2006339691 A JP2006339691 A JP 2006339691A
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- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 230000010287 polarization Effects 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 44
- 238000000137 annealing Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 230000010365 information processing Effects 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000008878 coupling Effects 0.000 abstract description 37
- 238000010168 coupling process Methods 0.000 abstract description 37
- 238000005859 coupling reaction Methods 0.000 abstract description 37
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 19
- 239000000523 sample Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000005259 measurement Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 238000010295 mobile communication Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
C軸の配向性を改善しても電気機械結合係数が改善されず、圧電薄膜弾性波素子必要な電気機械結合係数が得られない場合が存在する。このような場合には、圧電薄膜弾性波素子の損失が増加するため、受信系では受信感度が低下するおそれがあり、送信系では送信強度を高める必要が生じて省電力化に好ましくない。そこで、発明者らは、C軸の配向性以外に電気機械結合係数に影響を与える要因について調査し、電気機械結合係数を改善するための手法を検討した。
【解決手段】
圧電薄膜がAlN成膜された圧電薄膜弾性波素子において、前記圧電薄膜の分極強度が0.63×10−20 F/V以上であり、+C面においてAlN成膜されていることを特徴とする。
【選択図】 図7
Description
[mV]はSNDM測定系において、測定上直接的に得られるロックインアンプの出力信号(Vout)である。この信号は、例え同一の試料で測定したとしても、測定条件によって変わってしまう値であるため、普遍的ではない。言い換えると、異なる試料間でも、測定条件を調節すると同じ値を得ることができる。同一試料で、同一測定条件の下では、この出力信号で相対評価は可能である。しかし、同一試料で、異なる測定条件の下では、測定条件を考慮した出力で評価するべきである。測定パラメータを考慮した信号強度(Ig)は以下の式で与えられる。
以下、分極強度を[%]として表す場合の説明を示す。
この表示は試料面内における分極率として定義する。C面AlN膜の電気機械結合係数である0.25%を面内分極率100%としている(図7を参照)。以上に鑑みてそれぞれの成膜条件の実験結果を見ると、次のようになる。即ち、成膜条件1に関しては、成膜されたAlNは−C面成長していることがわかる。その分極強度は2628mV(または−1.00×10−20F/V)である。成膜条件2に関しては、同じく−C面成長している。分極強度は2381mV(または−1.51×10−20F/V)である。つまり、NH3アニールを行わない場合とNH3アニールを600℃で行う場合でほぼ同様の結果となり、−C面成長することがわかった。成膜条件3に関しては、+C面成長していることがわかった。成膜条件2との比較から、NH3アニールを1200℃で行うことによって、−C面から+C面成長に変化させることができることが分かる。さらに成長温度を1200℃で行った成膜条件4に関しては、分極強度の増した+C面膜であった。
Claims (9)
- 圧電薄膜の分極強度が0.63×10−20 F/V以上であることを特徴とする圧電薄膜弾性波素子。
- 請求項1記載の圧電薄膜弾性波素子において、
前記圧電薄膜はAlN、ZnOまたはGaNにより成膜されたことを特徴とする圧電薄膜弾性波素子。 - 請求項1又は2記載の圧電薄膜弾性波素子において、
前記圧電薄膜は、600℃以上の温度で成膜されたことを特徴とする圧電薄膜弾性波素子。 - 請求項1から3のいずれか記載の圧電薄膜弾性波素子において、
前記圧電薄膜は、前記圧電薄膜の結晶の+C面において成膜されたことを特徴とする圧電薄膜弾性波素子。 - 請求項1から4のいずれか記載の圧電薄膜弾性波素子において、
前記圧電薄膜は、1200℃以上の温度で窒化され、窒化された後に600℃以上の温度で成膜されたことを特徴とする圧電薄膜弾性波素子。 - 圧電薄膜がAlN成膜された圧電薄膜弾性波素子において、
前記圧電薄膜の分極強度が1.26×10−20 F/V以上であり、前記圧電薄膜の結晶の+C面においてAlN成膜されていることを特徴とする圧電薄膜弾性波素子。 - 請求項6記載の圧電薄膜弾性波素子において、
前記圧電薄膜は1200℃以上の温度で窒化され、窒化された後に600℃以上の温度で成膜されたことを特徴とする圧電薄膜弾性波素子。 - 請求項1から7のいずれか記載の圧電薄膜弾性波素子を備えたことを特徴とする情報処理装置。
- 圧電薄膜弾性波素子の製造方法であって、
前記圧電薄膜弾性波素子の圧電薄膜に対して水素アニールを行い、
前記水素アニールされた圧電薄膜に対して1200℃以上の温度で窒化を行い、
前記窒化された圧電薄膜に対して600℃以上の温度でAlN成膜を行うことを特徴とする圧電薄膜弾性波素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2005158300A JP5097338B2 (ja) | 2005-05-31 | 2005-05-31 | 圧電薄膜弾性波素子、圧電薄膜弾性波素子を用いた情報処理装置、及び圧電薄膜弾性波素子の製造方法 |
US11/442,355 US7714485B2 (en) | 2005-05-31 | 2006-05-30 | Piezoelectric thin-film acoustic wave device and information processing unit using the same |
US12/608,843 US7876031B2 (en) | 2005-05-31 | 2009-10-29 | Piezoelectric thin-film acoustic wave device and information processing unit using the same |
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JP2005158300A JP5097338B2 (ja) | 2005-05-31 | 2005-05-31 | 圧電薄膜弾性波素子、圧電薄膜弾性波素子を用いた情報処理装置、及び圧電薄膜弾性波素子の製造方法 |
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JP2006339691A true JP2006339691A (ja) | 2006-12-14 |
JP5097338B2 JP5097338B2 (ja) | 2012-12-12 |
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Families Citing this family (4)
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KR101001366B1 (ko) | 2006-09-28 | 2010-12-14 | 오티스 엘리베이터 컴파니 | 엘리베이터 로핑 용 조립체 |
JP5324110B2 (ja) * | 2008-01-16 | 2013-10-23 | 国立大学法人東京農工大学 | 積層体およびその製造方法 |
CN103095244A (zh) * | 2013-01-23 | 2013-05-08 | 天津理工大学 | 一种择优取向的AlN压电薄膜及其制备方法 |
CN110954591B (zh) * | 2019-12-04 | 2021-08-17 | 清华大学 | 氧化锌晶界老化过程离子迁移行为观测方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11308070A (ja) * | 1998-04-20 | 1999-11-05 | Murata Mfg Co Ltd | 圧電体素子 |
JP2000201050A (ja) * | 1998-11-02 | 2000-07-18 | Ngk Insulators Ltd | 表面弾性波装置用基板およびその製造方法 |
JP2003198319A (ja) * | 2001-12-26 | 2003-07-11 | Ube Electronics Ltd | 窒化アルミニウム薄膜−金属電極積層体およびそれを用いた薄膜圧電共振子 |
JP2003289235A (ja) * | 2002-03-28 | 2003-10-10 | Toshiba Corp | 薄膜圧電共振子 |
JP2005072409A (ja) * | 2003-08-27 | 2005-03-17 | Ngk Insulators Ltd | エピタキシャル基板、半導体積層構造、エピタキシャル基板の製造方法、およびエピタキシャル基板表面におけるピット発生抑制方法 |
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US4356424A (en) * | 1980-11-24 | 1982-10-26 | Eastman Kodak Company | Pseudo-AC method of nonuniformly poling a body of polymeric piezoelectric material and flexure elements produced thereby |
US6590336B1 (en) * | 1999-08-31 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Light emitting device having a polar plane piezoelectric film and manufacture thereof |
US6936837B2 (en) | 2001-05-11 | 2005-08-30 | Ube Industries, Ltd. | Film bulk acoustic resonator |
AU2003209209A1 (en) * | 2002-01-25 | 2003-09-02 | Michigan State University | Surface acoustic wave devices based on unpolished nanocrystalline diamond |
US6927651B2 (en) * | 2003-05-12 | 2005-08-09 | Agilent Technologies, Inc. | Acoustic resonator devices having multiple resonant frequencies and methods of making the same |
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2005
- 2005-05-31 JP JP2005158300A patent/JP5097338B2/ja not_active Expired - Fee Related
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2006
- 2006-05-30 US US11/442,355 patent/US7714485B2/en not_active Expired - Fee Related
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- 2009-10-29 US US12/608,843 patent/US7876031B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11308070A (ja) * | 1998-04-20 | 1999-11-05 | Murata Mfg Co Ltd | 圧電体素子 |
JP2000201050A (ja) * | 1998-11-02 | 2000-07-18 | Ngk Insulators Ltd | 表面弾性波装置用基板およびその製造方法 |
JP2003198319A (ja) * | 2001-12-26 | 2003-07-11 | Ube Electronics Ltd | 窒化アルミニウム薄膜−金属電極積層体およびそれを用いた薄膜圧電共振子 |
JP2003289235A (ja) * | 2002-03-28 | 2003-10-10 | Toshiba Corp | 薄膜圧電共振子 |
JP2005072409A (ja) * | 2003-08-27 | 2005-03-17 | Ngk Insulators Ltd | エピタキシャル基板、半導体積層構造、エピタキシャル基板の製造方法、およびエピタキシャル基板表面におけるピット発生抑制方法 |
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Publication number | Publication date |
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US7714485B2 (en) | 2010-05-11 |
US20100045138A1 (en) | 2010-02-25 |
US7876031B2 (en) | 2011-01-25 |
JP5097338B2 (ja) | 2012-12-12 |
US20070024157A1 (en) | 2007-02-01 |
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