JP2006323481A

JP2006323481A - Manufacturing method of semiconductor device

Info

Publication number: JP2006323481A
Application number: JP2005143952A
Authority: JP
Inventors: Nobuhiro Imaizumi; Takeshi Ishizuka; Masashi Nakagawa; 誠志中川; 延弘今泉; 剛石塚
Original assignee: Fujitsu Ltd; 富士通株式会社
Priority date: 2005-05-17
Filing date: 2005-05-17
Publication date: 2006-11-30
Anticipated expiration: 2025-05-17
Also published as: JP4740645B2

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of mass production at low cost.
SOLUTION: A first step of forming an adhesive layer 13 through which a recognition mark 11 can be seen through on a whole main surface of a substrate 12 on which a recognition mark 11 for alignment is displayed; The second step of placing the semiconductor element 14 with the recognition mark 11 as a reference, and the third step of forming the protective layer 15 so as to cover the entire surface of the adhesive layer 13 on which the semiconductor element 14 is placed A method of manufacturing a semiconductor device includes a step and a fourth step of bonding the substrate 12 and the protective layer 15 via the adhesive layer 13.
[Selection] Figure 1

Description

The present invention relates to a method for manufacturing a semiconductor device such as an IC card.

In recent years, IC cards and IC tags incorporating semiconductor elements are rapidly spreading. The IC card is used for, for example, a commuter pass having a prepaid function, a prepaid card, an identification card having an electronic key function, and the like. In addition, the IC tag is used, for example, as an electronic identification sign that replaces a barcode attached to various articles.

As a manufacturing method of these IC cards and the like, an adhesive bonding method (for example, an adhesive is applied by interposing an IC inlet composed of components including an IC chip and an antenna between a first substrate and a second substrate) , See Patent Document 1.) An IC module is fixed to a base material part, an IC protective layer covering the IC module is disposed thereon, and an injection molding layer is formed on the IC protective layer by injection molding. A molding method (see, for example, Patent Document 2) is used. Here, the conventional adhesive bonding method which is the mainstream as a manufacturing method for IC cards and the like will be described with reference to the drawings.

FIG. 4 is a process diagram showing a process of manufacturing an IC card by a conventional adhesive bonding method, and only a hatched portion shows a cross section. First, as shown in FIG. 4A, the first adhesive 103 is partially applied to the upper part of the substrate 102 on which the alignment recognition mark 101 is displayed. At this time, since the first adhesive 103 is usually an opaque adhesive, it is applied to a part of the substrate 102 so as not to cover the recognition mark 101. Next, as shown in FIG. 4B, the IC chip 104 is placed on the first adhesive 103. Next, as illustrated in FIG. 4C, a second adhesive 105 is applied so as to cover the entire surface of the substrate 102. Next, as illustrated in FIG. 4D, the protective layer 106 is disposed on the second adhesive 105. Finally, the IC card 107 shown in FIG. 4E is manufactured by pressing the protective layer 106 toward the substrate 102 and heating it.
JP 2003-30618 A JP-A-8-310171

In order to further spread the aforementioned IC cards and IC chips in the future, the development of production technology that enables mass production at a low cost becomes an issue. However, in the conventional adhesive bonding method, it is necessary to apply the second adhesive 105 after the first adhesive 103 is applied, which requires a number of steps. In addition, it is necessary to mount one semiconductor element for each substrate, which complicates work. For this reason, mass production at low cost was difficult with the conventional adhesive bonding method.

The present invention solves the above problems and provides a method of manufacturing a semiconductor device such as an IC card that can be mass-produced at a low cost.

The method for manufacturing a semiconductor device of the present invention includes a first step of forming an adhesive layer through which the recognition mark can be seen through on the entire main surface of the substrate on which the recognition mark for alignment is displayed, and the adhesive layer. A second step of placing the semiconductor element on the basis of the recognition mark as a reference, and a third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed. And a fourth step of bonding the substrate and the protective layer through the adhesive layer.

According to the present invention, a semiconductor device in which a semiconductor element is disposed between a substrate and a protective layer can be manufactured by forming only one adhesive layer, and a plurality of semiconductor elements are disposed on one substrate. A semiconductor device can be manufactured at a time. For this reason, the manufacturing method of the semiconductor device which can be mass-produced at low cost can be provided.

An example of the method for manufacturing a semiconductor device of the present invention includes a first step of forming an adhesive layer through which the recognition mark can be seen through on the entire main surface of the substrate on which the recognition mark for alignment is displayed, and the adhesive layer. And a second step of placing the semiconductor element with the recognition mark as a reference, and a third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed. And a fourth step of joining the substrate and the protective layer through the adhesive layer.

Since the recognition mark can be seen through the adhesive layer, the adhesive layer can be formed on the recognition mark, and the adhesive layer can be formed on the entire surface of the substrate at once. Therefore, the bonding between the substrate and the semiconductor element and the bonding between the substrate and the protective layer can be performed with one adhesive layer, and the manufacturing process can be simplified.

Here, the term “perspectively visible” includes not only a case where the adhesive layer is completely colorless and transparent, but also a colored transparent, semi-transparent and the like as long as the recognition mark can be confirmed through the adhesive layer.

Moreover, it is preferable that a contact bonding layer contains a thermosetting resin and joins a board | substrate and a protective layer by heating and hardening an contact bonding layer. This is because bonding by heat curing using a thermosetting resin has high bonding reliability and can perform a bonding operation reasonably.

Further, when the adhesive layer includes a thermosetting resin, the adhesive layer located at least below the semiconductor element is heated and cured by placing the semiconductor element on the adhesive layer after heating, and the semiconductor element It is preferable to bond the substrate and the protective layer by fixing on the substrate and then curing the uncured adhesive layer by heating. This is because the workability thereafter is improved by fixing the semiconductor element on the substrate in advance.

In addition, a semiconductor device precursor in which a plurality of semiconductor elements are placed on an adhesive layer, and then the substrate and the protective layer are bonded via the adhesive layer, and the plurality of semiconductor elements are disposed between the substrate and the protective layer. It is preferable to form a body and then cut the semiconductor device precursor into pieces so that at least one semiconductor element is included. This is because a plurality of semiconductor devices can be manufactured from a single substrate, and mass production at low cost can be performed more reliably.

Also, a two-layer film composed of a release layer and a protective layer is disposed so that the protective layer faces the adhesive layer, and the protective layer is disposed on the adhesive layer by pressing the two-layer film against the adhesive layer. Then, it is preferable to separate the protective layer and the release layer. By using a two-layer film, the protective layer can be easily separated from the press even when pressed with a press or the like, and the protective layer can be formed without applying stress to the substrate or the semiconductor element.

The adhesive layer can be formed from a film adhesive. The film adhesive can be continuously supplied and can be mass-produced by continuous production.

The adhesive layer can be formed from a liquid adhesive. The liquid adhesive can be applied by a roll coater, and the adhesive application process can be performed rationally.

Moreover, it is preferable that the said contact bonding layer is formed from the transparent adhesive agent containing a nanoparticle filler. This is because inclusion of the nanoparticle filler can improve the heat resistance and water resistance of the adhesive layer while maintaining the transparency of the adhesive layer.

Moreover, it is preferable that the said protective layer is formed from the thermoplastic resin film. By forming the protective layer as a film in advance, the protective layer can be handled rationally, and by using the thermoplastic resin, the thermoplastic resin softens due to the heat when the adhesive layer is heated. It is because joining with a thermoplastic resin film can be performed more firmly.

Next, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is a process diagram showing an example of a manufacturing process of a semiconductor device of the present invention, and only a hatched portion shows a cross section. First, as shown in FIG. 1A, an adhesive layer 13 through which the recognition mark 11 can be seen through is formed on the entire main surface of the substrate 12 on which the alignment recognition mark 11 is displayed. By forming the adhesive layer 13 with a material through which the recognition mark 11 can be seen through, the recognition mark 11 can be recognized even if the adhesive layer 13 is formed on the entire surface of the substrate 12.

The adhesive layer 13 can be formed from a film adhesive or a liquid adhesive containing a main component of a thermosetting resin and a curing agent. The thickness of the adhesive layer 13 varies depending on the thickness of a semiconductor element described later, but is, for example, 0.05 mm to 0.3 mm.

The main component of the thermosetting resin is not particularly limited as long as the recognition mark 11 can be seen through, but an epoxy resin is preferable in terms of bonding reliability. As the epoxy resin, for example, bisphenol A type epoxy, bisphenol F type epoxy, naphthalene type epoxy, brominated epoxy, phenol novolak type epoxy, cresol novolak type epoxy, biphenyl type epoxy, etc., which are solid type or liquid type, are used. Can do.

As the curing agent for the thermosetting resin, for example, an acid anhydride curing agent, an amine curing agent, a phenol curing agent, or the like can be used. Examples of the acid anhydride curing agent include 3,4-dimethyl-6- (2-methyl-1-propenyl) -4-cyclohexene-1,2-dicarboxylic acid anhydride, methyltetrahydrophthalic anhydride, methylhexahydro Phthalic anhydride, methyl hymic anhydride, hexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, tetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid, nadic anhydride and the like can be used. As the amine-based curing agent, for example, diethylenetriamine, triethylenetetramine, mensendiamine, isophoronediamine, metaxylenediamine, diaminodiphenylmethane, metaphenylenediamine, diaminodiphenylsulfone and the like can be used. As a phenol type hardening | curing agent, a phenol novolak type, a paraxylylene modified phenol type, a dicyclopentadiene modified phenol type etc. can be used, for example.

Moreover, it is preferable that a thermosetting resin further contains a nanoparticle filler. This is because the heat resistance and water resistance of the adhesive layer 13 can be improved while maintaining the transparency of the adhesive layer 13. As the nanoparticle filler, silica powder, alumina powder or the like having a particle diameter of 40 nm or less can be used. This is because if the particle diameter is smaller than this, the light scattering is not hindered and the transparency is not lowered. There is no restriction | limiting in particular in the addition amount of a nanoparticle filler.

The substrate 12 may be a ceramic substrate, a glass epoxy substrate, or the like as a rigid substrate, and a polyethylene terephthalate (PET) substrate, a polyimide (PI) substrate, or the like as a flexible substrate. Although the thickness of the board | substrate 12 is not specifically limited, Usually, it is 0.1 mm-1 mm.

Next, as shown in FIG. 1B, the semiconductor element 14 is placed on the adhesive layer 13 with the recognition mark 11 as a reference. At this time, if the semiconductor element 14 is heated in advance, a part of the adhesive layer 13 positioned under the semiconductor element 14 is cured, and the semiconductor element 14 can be temporarily fixed. The size and type of the semiconductor element 14 are not particularly limited. For example, an IC chip having a length of 1.0 mm to 2.0 mm, a width of 1.5 mm to 3.0 mm, and a thickness of 0.1 mm to 0.3 mm is applicable. .

Next, as shown in FIG. 1C, a protective layer 15 is disposed so as to cover the entire surface of the adhesive layer 13 on which the semiconductor element 14 is placed. The protective layer 15 can be formed from a thermoplastic resin film. Examples of the thermoplastic resin film include acrylic resin, polyether sulfone, polyester resin, ethylene vinyl acetate copolymer, ethylene acrylate copolymer, polyamide resin, butadiene rubber / styrene copolymer, phenoxy resin, or these A film made of a mixture or the like can be used. Although the thickness of the protective layer 15 is not specifically limited, For example, they are 0.1 mm-1 mm.

Finally, the protective layer 15 is pressed to the substrate 12 side while heating using a press (not shown). As a result, the semiconductor element 14 is embedded in the adhesive layer 13 and the adhesive layer 13 is also heated and cured, and the substrate 12 and the protective layer 15 are bonded to each other through the adhesive layer 13. 16 is manufactured.

(Embodiment 2)
FIG. 2 is a process diagram showing another example of the manufacturing process of the semiconductor device of the present invention, and only the hatched portion shows a cross section. This embodiment is different from Embodiment 1 in that a plurality of semiconductor elements are placed on a substrate, a two-layer film is used for forming a protective layer, and finally the substrate is cut into individual pieces. It is almost the same as the first embodiment. Therefore, a part of the description common to the first embodiment is omitted.

First, as shown in FIG. 2A, an adhesive layer 23 through which the recognition mark 21 can be seen through is formed on the entire main surface of the substrate 22 on which the alignment recognition mark 21 is displayed. By forming the adhesive layer 23 with a material through which the recognition mark 21 can be seen through, the recognition mark 21 can be recognized even if the adhesive layer 23 is formed on the entire surface of the substrate 22. The adhesive layer 23 can be formed from a film adhesive or a liquid adhesive containing a main component of a thermosetting resin and a curing agent.

Next, as shown in FIG. 2B, a plurality of semiconductor elements 24 are placed on the adhesive layer 23 with the recognition mark 21 as a reference. At this time, if the semiconductor element 24 is preliminarily heated, a part of the adhesive layer 23 located under the semiconductor element 24 is cured, and the semiconductor element 24 can be temporarily fixed. The size and type of the semiconductor element 24 are not particularly limited.

Next, as shown in FIG. 2C, a two-layer film 27 composed of a protective layer 25 and a release layer 26 is formed so as to cover the entire surface of the adhesive layer 23 on which the semiconductor element 24 is placed. The press 28 is disposed on the two-layer film 27. The heating press 28 can be formed from stainless steel or the like.

The protective layer 25 can be formed from a thermoplastic resin film. Examples of the thermoplastic resin film include acrylic resin, polyether sulfone, polyester resin, ethylene vinyl acetate copolymer, ethylene acrylate copolymer, polyamide resin, butadiene rubber / styrene copolymer, phenoxy resin, or these A film made of a mixture or the like can be used. Although the thickness of the protective layer 25 is not specifically limited, For example, they are 0.1 mm-1 mm. The release layer 26 is made of a peelable material. The release material is not particularly limited, and any of inorganic release agents and organic release agents can be used. Although the thickness of the peeling layer 26 is not specifically limited, For example, it is 0.1 mm-1 mm.

Next, as illustrated in FIG. 2D, the two-layer film 27 is pressed against the adhesive layer 23 using a press 28 while being heated. The temperature of the press 28 is set to be equal to or higher than the curing temperature of the adhesive layer 23. As a result, the semiconductor element 24 is embedded in the adhesive layer 23, and the adhesive layer 23 is also heated and cured, so that the substrate 22 and the protective layer 25 are bonded together via the adhesive layer 23.

Next, as shown in FIG. 2E, when the two-layer film 27 and the press 28 are lifted, the protective layer 25 and the release layer 26 are easily separated. The peeling layer 26 can be smoothly separated from the protective layer 25 by lifting the protective layer 25 after pressing it against the substrate 22 using the two-layer film 27 provided with the peeling layer 26.

Finally, a plurality of semiconductor devices are manufactured by cutting the cutting portions a, b, and c shown in FIG. 2E with a cutter or the like.

FIG. 3 is a side view showing the press 28 and the two-layer film 27. The two-layer film 27 is unwound from the roll 29 and pressed by the press 28, and then wound on the roll 30.

Hereinafter, the present invention will be specifically described based on examples. However, the present invention is not limited to the following examples.

(Example)
An IC card was produced in the same manner as in Embodiment 2 as described below.

First, an adhesive layer was formed by applying a transparent adhesive with a thickness of 0.1 mm to one whole main surface of the substrate on which the alignment recognition mark was displayed, using a roll coater. As this adhesive, 100 parts by weight of bisphenol F type epoxy resin “EXA830LVP” (trade name) manufactured by Dainippon Ink as the main agent and methyltetrahydrophthalic anhydride “KRM-291-5” manufactured by Asahi Denka as the curing agent ( Epoxy resin adhesive containing 100 parts by weight of the product name), 1 part by weight of imidazole “1M2EZ” (trade name) made by Shikoku Kasei as the curing catalyst, and 40 parts by weight of silica fine particles having an average particle size of 30 nm as the nanoparticle filler. The agent was used. As the substrate, a PET substrate having a length of 246 mm, a width of 374 mm, and a thickness of 0.38 mm was used.

Next, 16 IC chips, which were aligned with the recognition mark as a reference and heated to about 200 ° C., were placed on the adhesive layer and mounted by bonding. The size of the IC chip was 1.5 mm in length, 2.1 mm in width, and 0.12 mm in thickness, and the bonding pressure was 5 kgf / 1 chip.

Next, a two-layer film composed of a protective layer and a release layer is disposed so as to cover the entire surface of the substrate on which the IC chip is mounted so that the protective layer faces the adhesive layer of the substrate, and two layers of press are applied. Placed on the film. As the protective layer, an acrylic resin film having a thickness of 0.8 mm made by 3M was used. As the release layer, an inorganic release coating agent was used by coating the surface of the protective layer with a thickness of 0.5 mm. The press used was a stainless steel press.

Next, while heating the two-layer film using a press heated to 150 ° C., it is pressed to the substrate side with a press load of 64 kgf, the adhesive layer is heated and cured, and the substrate and the protective layer are interposed via the adhesive layer. Joined.

Finally, the substrate was cut into a size of 54 mm in length and 86 mm in width, and an IC card of this example in which one IC chip was mounted was produced.

(Comparative example)
As described below, an IC card was produced in the same manner as the conventional process shown in FIG.

First, a first adhesive having a thickness of 0.1 mm was applied to a part of the substrate (54 mm long and 86 mm wide) on which the alignment recognition marks were displayed so as not to cover the recording marks. As the first adhesive, the same adhesive as in Example 1 was used. In addition, as the substrate, the PET substrate used in Example 1 was cut into a size of 54 mm long and 86 mm wide.

Next, on the first adhesive, one IC chip that was positioned at the reference mark and heated to about 200 ° C. was placed and mounted by bonding. As the IC chip, the same IC chip as in Example 1 was used. The bonding pressure of the IC chip was 5 kgf.

Next, the 2nd adhesive agent was apply | coated by thickness 0.2mm using the roll coater so that the whole surface of the board | substrate with which the IC chip was mounted may be covered. An epoxy adhesive was used as the second adhesive.

Next, a protective layer was disposed on the second adhesive. As the protective layer, the same acrylic resin film as in Example 1 was used.

Finally, while pressing the protective layer using a press heated to 150 ° C., the substrate is pressed to the substrate side with a press load of 4 kgf to heat and cure the second adhesive, and the substrate and the protective layer are bonded to the second layer. The IC card of this comparative example was produced by bonding through an adhesive.

In the above embodiment, an IC card in which an IC chip is arranged between the substrate and the protective layer can be manufactured by using only one type of adhesive, and the manufacturing process can be simplified. In addition, by arranging a plurality of IC chips between the substrate and the protective layer and then cutting, a plurality of IC cards can be manufactured at a time, and the manufacturing efficiency can be improved. Therefore, a method for manufacturing a semiconductor device such as an IC card that can be mass-produced at low cost can be provided.

On the other hand, in the comparative example, it is necessary to apply two types of adhesives, and the manufacturing process becomes complicated. Further, since one IC chip is arranged for each substrate, the manufacturing efficiency is not good.

Regarding the embodiment of the present invention including the above examples, the following additional notes are further disclosed.

(Additional remark 1) The 1st process of forming the adhesive layer which can see through the said recognition mark on one whole main surface of the board | substrate with which the recognition mark for alignment was displayed,
A second step of placing a semiconductor element on the adhesive layer with the recognition mark as a reference; and
A third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed;
A method for manufacturing a semiconductor device, comprising: a fourth step of bonding the substrate and the protective layer through the adhesive layer.

(Appendix 2) The adhesive layer includes a thermosetting resin,
The method for manufacturing a semiconductor device according to appendix 1, wherein, in the fourth step, the substrate and the protective layer are joined by heating and curing the adhesive layer.

(Additional remark 3) The said contact bonding layer contains a thermosetting resin,
In the second step, by heating the semiconductor element and placing it on the adhesive layer, the adhesive layer located at least under the semiconductor element is heated and cured, and the semiconductor element is Fixed on the board,
The method for manufacturing a semiconductor device according to appendix 1, wherein, in the fourth step, the uncured adhesive layer is heated and cured to join the substrate and the protective layer.

(Appendix 4) In the second step, a plurality of the semiconductor elements are placed on the adhesive layer,
In the fourth step, the substrate and the protective layer are bonded via the adhesive layer, and a semiconductor device precursor in which a plurality of the semiconductor elements are arranged between the substrate and the protective layer is formed. ,
The semiconductor device manufacturing method according to appendix 1, further comprising a fifth step of cutting the semiconductor device precursor into individual pieces so that at least one semiconductor element is included.

(Supplementary Note 5) In the third step, a two-layer film composed of a release layer and the protective layer is disposed so that the protective layer faces the adhesive layer, and the two-layer film is disposed on the adhesive layer. The manufacturing method of the semiconductor device according to appendix 1, wherein the protective layer and the release layer are separated after the protective layer is disposed on the adhesive layer by pressing.

(Additional remark 6) The said adhesive layer is a manufacturing method of the semiconductor device of any one of Additional remarks 1-5 currently formed from the film adhesive.

(Additional remark 7) The said adhesive layer is a manufacturing method of the semiconductor device of any one of Additional remarks 1-5 currently formed from the liquid adhesive agent.

(Additional remark 8) The said liquid adhesive is a manufacturing method of the semiconductor device of Additional remark 7 applied using a roll coater.

(Additional remark 9) The said contact bonding layer is a manufacturing method of the semiconductor device of any one of Additional remark 1-8 currently formed from the transparent adhesive agent containing a nanoparticle filler.

(Additional remark 10) The said protective layer is a manufacturing method of the semiconductor device of any one of Additional remarks 1-5 currently formed from the thermoplastic resin film.

It is process drawing which shows an example of the manufacturing process of the semiconductor device of this invention. It is process drawing which shows another example of the manufacturing process of the semiconductor device of this invention. It is a side view of a press and a two-layer film. It is process drawing which shows the process of manufacturing an IC card by the conventional adhesive bonding method.

Explanation of symbols

11, 21, 101 Recognition mark 12, 22, 102 Substrate 13, 23 Adhesive layer 14, 24 Semiconductor element 15, 25, 106 Protective layer 16 Semiconductor device 26 Release layer 27 Two-layer film 28 Press 29, 30 Roll 103 First Adhesive 104 IC chip 105 Second adhesive 107 IC card

Claims

A first step of forming an adhesive layer through which the recognition mark can be seen through on the entire main surface of one of the substrates on which the recognition mark for alignment is displayed;
A second step of placing a semiconductor element on the adhesive layer with the recognition mark as a reference; and
A third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed;
A method for manufacturing a semiconductor device, comprising: a fourth step of bonding the substrate and the protective layer through the adhesive layer.
The adhesive layer includes a thermosetting resin,
The method of manufacturing a semiconductor device according to claim 1, wherein in the fourth step, the substrate and the protective layer are joined by heating and curing the adhesive layer.
The adhesive layer includes a thermosetting resin,
In the second step, by heating the semiconductor element and placing it on the adhesive layer, the adhesive layer located at least under the semiconductor element is heated and cured, and the semiconductor element is Fixed on the board,
2. The method of manufacturing a semiconductor device according to claim 1, wherein in the fourth step, the substrate and the protective layer are joined by heating and curing the uncured adhesive layer.
In the second step, a plurality of the semiconductor elements are placed on the adhesive layer,
In the fourth step, the substrate and the protective layer are bonded via the adhesive layer, and a semiconductor device precursor in which a plurality of the semiconductor elements are arranged between the substrate and the protective layer is formed. ,
The method of manufacturing a semiconductor device according to claim 1, further comprising a fifth step of cutting the semiconductor device precursor into individual pieces so that at least one semiconductor element is included.
In the third step, a two-layer film composed of a release layer and the protective layer is disposed so that the protective layer faces the adhesive layer, and the two-layer film is pressed against the adhesive layer. 2. The method of manufacturing a semiconductor device according to claim 1, wherein after the protective layer is disposed on the adhesive layer, the protective layer and the release layer are separated.