JP2006275603A - Method for inspecting solid-state imaging element, and its device - Google Patents

Method for inspecting solid-state imaging element, and its device Download PDF

Info

Publication number
JP2006275603A
JP2006275603A JP2005091803A JP2005091803A JP2006275603A JP 2006275603 A JP2006275603 A JP 2006275603A JP 2005091803 A JP2005091803 A JP 2005091803A JP 2005091803 A JP2005091803 A JP 2005091803A JP 2006275603 A JP2006275603 A JP 2006275603A
Authority
JP
Japan
Prior art keywords
solid
light
inspection
state image
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005091803A
Other languages
Japanese (ja)
Inventor
Toru Sasayama
徹 笹山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2005091803A priority Critical patent/JP2006275603A/en
Publication of JP2006275603A publication Critical patent/JP2006275603A/en
Pending legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To illuminate a solid-state imaging element with light for inspection of desired intensity, without the calibration work, and thereby reducing the inspection cost. <P>SOLUTION: This inspection device is equipped with a light source device 10 for illuminating the solid-state imaging element 31, which is an inspecting object with a light 15 for inspection and a prober device 20 equipped with a probe card 22 for acquiring the output signal of the imaging element 31, by bringing a probe 22a into contact with a stage 21 for placing the imaging element 31 thereon and with the electrode pad of the imaging element 31. The imaging element 31 is inspected with a light sensor 25 provided in the prober device 20 for detecting the light 15 for illuminating the imaging element 31 and with a control means 14 provided for controlling the source device 10 according to a detection value of the sensor 25 to illuminate the imaging element 31 with the prescribed light 15. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明はCCD型イメージやCMOS型イメージセンサの様な固体撮像素子を検査する検査方法及びその装置に係り、特に、検査コストの低減を図ることができる固体撮像素子の検査方法及びその装置に関する。   The present invention relates to an inspection method and apparatus for inspecting a solid-state image sensor such as a CCD type image or a CMOS image sensor, and more particularly to an inspection method and apparatus for a solid-state image sensor that can reduce the inspection cost.

固体撮像素子を検査する場合、例えば下記特許文献1,2に記載されている様に、実際に所定強度の光(試験光)を固体撮像素子に照射し、そのとき得られる固体撮像素子の出力信号によって検査している。   When inspecting a solid-state imaging device, for example, as described in Patent Documents 1 and 2 below, the solid-state imaging device is actually irradiated with light (test light) of a predetermined intensity, and the output of the solid-state imaging device obtained at that time Inspected by signal.

図5は、従来の検査装置の構成図である。この検査装置は、光源装置100と、プローバ装置200と、これらを制御する制御装置300とから成る。光源装置100は、ハロゲンランプ等の光源101と、光源101からプローバ装置200に照射される試験光の出射光量を調整する光量調整器102と、光源101の近傍に配置され光源101の出力光強度を検出する光センサ103と、光センサ103の検出信号に基づいて光源101の電源電圧を制御し光センサ103の検出値が所定値となるように制御するAGC制御部104とからなる。光量調整器102は、第1スリット板102aと第2スリット板102bとから成り、両者を移動することで、両者間に形成されているスリット穴102cの開口量の調整を行い、試験光105の出射光量を調整する。   FIG. 5 is a configuration diagram of a conventional inspection apparatus. This inspection device includes a light source device 100, a prober device 200, and a control device 300 for controlling them. The light source device 100 includes a light source 101 such as a halogen lamp, a light amount adjuster 102 that adjusts an emitted light amount of test light emitted from the light source 101 to the prober device 200, and an output light intensity of the light source 101 that is disposed in the vicinity of the light source 101. And an AGC control unit 104 that controls the power supply voltage of the light source 101 based on the detection signal of the optical sensor 103 and controls the detection value of the optical sensor 103 to be a predetermined value. The light amount adjuster 102 includes a first slit plate 102a and a second slit plate 102b, and adjusts the opening amount of the slit hole 102c formed between the two by moving both of them. Adjust the amount of emitted light.

プローバ装置200は、検査対象となる固体撮像素子が形成された半導体ウェハ301を載置するテーブル201と、固体撮像素子の電極パッドにプローブ針202aを当接して固体撮像素子の出力信号を収集する円盤形状のプローブカード202とを備えてなる。   The prober apparatus 200 collects output signals of a solid-state image sensor by contacting a probe 201a with a table 201 on which a semiconductor wafer 301 on which a solid-state image sensor to be inspected is formed, and an electrode pad of the solid-state image sensor. And a disk-shaped probe card 202.

制御装置300は、光源装置100及びプローバ装置200を制御し、プローブカード202の中心穴202bを通して固体撮像素子に光源装置100からの試験光105を照射したときにプローブカード202から得られる固体撮像素子の出力信号を取得し、固体撮像素子の良否等の検査を行う。   The control device 300 controls the light source device 100 and the prober device 200, and the solid-state imaging device obtained from the probe card 202 when the solid-state imaging device is irradiated with the test light 105 from the light source device 100 through the center hole 202b of the probe card 202. The output signal is acquired and the quality of the solid-state image sensor is checked.

固体撮像素子の検査装置は、所定強度の試験光を固体撮像素子に照射し検査を行う必要があるため、光源101が経年的に劣化し出力光強度が低下したときでも光センサ103の検出値が所定値となるようにAGC制御部104によって光源101の電源電圧を制御し、試験光強度を所定値に保っている。   Since the inspection device for a solid-state image sensor needs to inspect the solid-state image sensor by irradiating a test light with a predetermined intensity, the detection value of the optical sensor 103 even when the light source 101 deteriorates with time and the output light intensity decreases. The AGC control unit 104 controls the power supply voltage of the light source 101 such that the test light intensity is kept at a predetermined value.

特開2004―266250号公報Japanese Patent Laid-Open No. 2004-266250 特開2002―261141号公報JP 2002-261141 A

しかしながら、従来の固体撮像素子の検査装置は、光センサの設置位置が光源101の近傍であり、検査対象となる固体撮像素子から離れた位置であるため、固体撮像素子の位置における試験光強度を必要な強度にするために、多大な時間をかけて校正しており、また、この校正作業を検査装置のメンテナンス毎に行わなければならず、検査コストの増大を招いている。   However, in the conventional solid-state image sensor inspection device, since the installation position of the optical sensor is in the vicinity of the light source 101 and away from the solid-state image sensor to be inspected, the test light intensity at the position of the solid-state image sensor is obtained. In order to obtain the required strength, calibration takes a long time, and this calibration work must be performed every maintenance of the inspection apparatus, resulting in an increase in inspection cost.

本発明の目的は、校正作業を短時間で行うことができ、また、メンテナンス時間の短縮も図ることができる固体撮像素子の検査方法及びその装置を提供することにある。   An object of the present invention is to provide a solid-state imaging device inspection method and apparatus capable of performing calibration work in a short time and reducing maintenance time.

本発明の検査方法は、検査対象の固体撮像素子に検査用の光を照射する光源装置と、前記固体撮像素子を載置するステージ及び該固体撮像素子の電極パッドにプローブ針を接触させて該固体撮像素子の出力信号を取得するプローブカードを備えるブローバ装置とを備える検査装置の検査方法において、前記固体撮像素子に照射される前記検査用の光を検出する光センサを前記ブローバ装置内に設け、該光センサの検出値に応じて前記光源装置を制御し所定の検査用の光を前記固体撮像素子に照射させ該固体撮像素子の検査を行うことを特徴とする。   The inspection method of the present invention includes a light source device that irradiates a solid-state image sensor to be inspected with light for inspection, a stage on which the solid-state image sensor is mounted, and a probe needle in contact with an electrode pad of the solid-state image sensor. In the inspection method of an inspection apparatus provided with a blower device provided with a probe card which acquires an output signal of a solid-state image sensor, an optical sensor which detects the inspection light irradiated to the solid-state image sensor is provided in the blower device The light source device is controlled according to the detection value of the optical sensor, and the solid-state image sensor is inspected by irradiating the solid-state image sensor with a predetermined inspection light.

本発明の検査方法は、前記光センサが前記ステージ内またはステージ上に設けられることを特徴とする。   The inspection method of the present invention is characterized in that the optical sensor is provided in or on the stage.

本発明の検査方法は、前記光センサが前記プローブカード上に設けられることを特徴とする。   The inspection method of the present invention is characterized in that the optical sensor is provided on the probe card.

本発明の固体撮像素子の検査装置は、検査対象の固体撮像素子に検査用の光を照射する光源装置と、前記固体撮像素子を載置するステージ及び該固体撮像素子の電極パッドにプローブ針を接触させて該固体撮像素子の出力信号を取得するプローブカードを備えるブローバ装置とを備える固体撮像素子の検査装置において、前記ブローバ装置内に設置され前記固体撮像素子に照射される前記検査用の光を検出する光センサと、該光センサの検出値に応じて前記光源装置を制御し所定の検査用の光を前記固体撮像素子に照射させる制御手段とを備えることを特徴とする。   An inspection apparatus for a solid-state image sensor according to the present invention includes a light source device that irradiates a test solid-state image sensor with light for inspection, a stage on which the solid-state image sensor is mounted, and a probe needle on an electrode pad of the solid-state image sensor. In a solid-state image sensor inspection apparatus comprising a probe card including a probe card that obtains an output signal of the solid-state image sensor by contact with the light, the inspection light that is installed in the blower apparatus and irradiated on the solid-state image sensor And a control means for controlling the light source device in accordance with a detection value of the light sensor and irradiating the solid-state image sensor with predetermined inspection light.

本発明の固体撮像素子の検査装置は、前記光センサが前記ステージ内またはステージ上に設置されることを特徴とする。   The solid-state imaging device inspection apparatus according to the present invention is characterized in that the optical sensor is installed in or on the stage.

本発明の固体撮像素子の検査装置は、前記光センサが前記プローブカード上に設置されることを特徴とする。   The inspection device for a solid-state imaging device according to the present invention is characterized in that the optical sensor is installed on the probe card.

本発明によれば、検査対象の固体撮像素子近傍に設置された光センサの検出値により試験光の光源を制御するため、校正無しで所望強度等の試験光が得られ、これにより検査コストの低減を図ることが可能となる。   According to the present invention, since the light source of the test light is controlled by the detection value of the optical sensor installed in the vicinity of the solid-state imaging device to be inspected, test light having a desired intensity can be obtained without calibration, thereby reducing the inspection cost. Reduction can be achieved.

以下、本発明の一実施形態について、図面を参照して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

図1は、本発明の第1の実施形態に係る固体撮像素子の検査装置の構成図である。   FIG. 1 is a configuration diagram of a solid-state imaging device inspection apparatus according to a first embodiment of the present invention.

本実施形態に係る検査装置は、光源装置10と、プローバ装置20と、これらを制御する制御装置30とから成る。   The inspection apparatus according to this embodiment includes a light source device 10, a prober device 20, and a control device 30 that controls them.

光源装置10は、ハロゲンランプ等の光源11と、光源11からプローバ装置20に照射される試験光の出射光量を調整する光量調整器12と、プローバ装置20内に設置された後述の光センサ25の検出信号に基づいて光源11の電源電圧を制御し光センサ25の検出値が所定値となるように制御する光源制御部14とを備える。   The light source device 10 includes a light source 11 such as a halogen lamp, a light amount adjuster 12 that adjusts an emitted light amount of test light emitted from the light source 11 to the prober device 20, and an optical sensor 25 described later installed in the prober device 20. And a light source controller 14 that controls the power supply voltage of the light source 11 based on the detection signal of the light source 11 and controls the detection value of the optical sensor 25 to be a predetermined value.

光量調整器12は、図5と同様に、第1スリット板12aと第2スリット板12bとから成り、両者を移動することで、両者間に形成されているスリット穴12cの開口量の調整を行い、試験光15の出射光量を調整する。   Similarly to FIG. 5, the light amount adjuster 12 is composed of a first slit plate 12a and a second slit plate 12b, and by moving both, the opening amount of the slit hole 12c formed between the two is adjusted. And adjust the amount of light emitted from the test light 15.

プローバ装置20は、検査対象となる固体撮像素子が形成された半導体ウェハ31を載置するテーブル21と、固体撮像素子の電極パッドにプローブ針22aを当接して固体撮像素子の出力信号を収集する円盤形状のプローブカード22とを備えてなり、テーブル21内の固体撮像素子設置位置直下には、受光面がテーブル上面に露出する光センサ25が設けられている。   The prober apparatus 20 collects output signals of the solid-state image sensor by bringing the probe needle 22a into contact with the table 21 on which the semiconductor wafer 31 on which the solid-state image sensor to be inspected is formed, and the electrode pad of the solid-state image sensor. A disk-shaped probe card 22 is provided, and an optical sensor 25 having a light receiving surface exposed on the upper surface of the table is provided immediately below the position where the solid-state imaging device is installed in the table 21.

制御装置30は、光源装置10及びプローバ装置20を制御し、プローブカード22の中心穴22bを通して固体撮像素子に光源装置10からの試験光15を照射したときにプローブカード22から得られる固体撮像素子の出力信号を取得し、固体撮像素子の良否等の検査を行う。   The control device 30 controls the light source device 10 and the prober device 20, and the solid-state imaging device obtained from the probe card 22 when the solid-state imaging device is irradiated with the test light 15 from the light source device 10 through the center hole 22 b of the probe card 22. The output signal is acquired and the quality of the solid-state image sensor is checked.

この検査装置を用いて固体撮像素子の検査を行う場合、半導体ウェハ31をステージ21に載せない状態で、光センサ25の受光面が試験光15を受光する位置となるようにステージ21の位置調整を行う。そして、光源11を制御し、検査に必要な光強度となるように、即ち、光センサ25の検出値が所定値となるように光源制御部14が光源11の電源電圧の調整を行い、この調整値をメモリ等に保存しておく。このとき、光量調整器12を調整し、必要な光量の基での調整値を求める。   When inspecting a solid-state imaging device using this inspection apparatus, the position of the stage 21 is adjusted so that the light receiving surface of the optical sensor 25 is positioned to receive the test light 15 without placing the semiconductor wafer 31 on the stage 21. I do. Then, the light source 11 is controlled, and the light source control unit 14 adjusts the power supply voltage of the light source 11 so that the light intensity necessary for the inspection is obtained, that is, the detection value of the optical sensor 25 becomes a predetermined value. The adjustment value is stored in a memory or the like. At this time, the light amount adjuster 12 is adjusted to obtain an adjustment value based on the necessary light amount.

次に、ステージ21上に、固体撮像素子が形成された半導体ウェハ31を載置し、ステージ21を移動させて固体撮像素子を試験光15の直下位置にする。このとき、光源制御部14は、メモリ等に保存されている調整値を用いて光源11の制御を行う。これにより、検査に必要な光強度の試験光15が固体撮像素子に照射され、固体撮像素子の出力信号が制御装置30に取り込まれ、固体撮像素子の良否等が判定される。   Next, the semiconductor wafer 31 on which the solid-state imaging device is formed is placed on the stage 21, and the stage 21 is moved so that the solid-state imaging device is positioned immediately below the test light 15. At this time, the light source control unit 14 controls the light source 11 using an adjustment value stored in a memory or the like. Thereby, the test light 15 having the light intensity necessary for the inspection is irradiated onto the solid-state image sensor, and the output signal of the solid-state image sensor is taken into the control device 30 to determine whether the solid-state image sensor is good or bad.

本実施形態では、検査対象となる固体撮像素子の近傍位置に光センサを設置したため、この光センサの検出値から求めた光源11の制御値(上記の調整値)で光源11を制御すれば、校正無しで検査に必要な強度の試験光15が得られる。   In this embodiment, since the optical sensor is installed in the vicinity of the solid-state imaging device to be inspected, if the light source 11 is controlled by the control value (the adjustment value) of the light source 11 obtained from the detection value of the optical sensor, The test light 15 having the intensity required for inspection can be obtained without calibration.

尚、上記の例では、光源11の電源電圧を調整して所望の光強度を得ているが、電流値を調整して所望の光強度を得るようにしても良いことはいうまでもない。また、制御はアナログ信号を用いる他、デジタル信号で制御を行ってもよい。更に、試験光の光強度を所望の値とする様に制御した例を説明したが、光センサ25として色温度センサを用い、光源に設けた色温度フィルタを制御部14で調整して試験光15の色温度を所望色温度に制御することでもよい。   In the above example, the desired light intensity is obtained by adjusting the power supply voltage of the light source 11, but it goes without saying that the desired light intensity may be obtained by adjusting the current value. In addition to the analog signal, the control may be performed using a digital signal. Further, an example in which the light intensity of the test light is controlled to a desired value has been described. However, a color temperature sensor is used as the light sensor 25, and the color temperature filter provided in the light source is adjusted by the control unit 14 to thereby test light. The fifteen color temperature may be controlled to a desired color temperature.

図2は、本発明の第2の実施形態に係る検査装置の構成図である。本実施形態に係る検査装置と図1の第1の実施形態に係る検査装置とは、光センサの設置位置が異なるだけであるので、同一構成部材には同一符号を付してその説明は省略し、異なる部分についてのみ説明する。   FIG. 2 is a configuration diagram of an inspection apparatus according to the second embodiment of the present invention. Since the inspection apparatus according to the present embodiment and the inspection apparatus according to the first embodiment of FIG. 1 only differ in the installation position of the optical sensor, the same components are denoted by the same reference numerals and description thereof is omitted. Only the different parts will be described.

本実施形態の検査装置では、光センサ26は、試験光15が透過する中心穴22bが穿設されたプローブカード22の中心穴22bの直ぐ近くの上面に設置されている。プローブカード22は、制御装置30との間で種々の電気信号を授受するラインを持っているため、プローブカード22の信号線を利用して光センサ26を光源制御部14に接続することができる。   In the inspection apparatus of this embodiment, the optical sensor 26 is installed on the upper surface immediately adjacent to the center hole 22b of the probe card 22 in which the center hole 22b through which the test light 15 is transmitted. Since the probe card 22 has lines for transmitting and receiving various electrical signals to and from the control device 30, the optical sensor 26 can be connected to the light source control unit 14 using the signal lines of the probe card 22. .

本実施形態によれば、第1の実施形態と同様の効果が得られる他、固体撮像素子の検査中でも光センサ26が試験光15を受光するため、光源制御部14は、常時、光センサ26の検出値を用いて光源11をオンラインでフィードバック制御することができる。   According to the present embodiment, the same effects as those of the first embodiment can be obtained, and the light sensor 26 always receives the test light 15 even during the inspection of the solid-state imaging device. The light source 11 can be feedback-controlled online using the detected value.

図3は、本発明の第3の実施形態に係る検査装置の構成図である。本実施形態に係る検査装置と図1の第1の実施形態に係る検査装置とは、光センサの設置位置が異なるだけであるので、同一構成部材には同一符号を付してその説明は省略し、異なる部分についてのみ説明する。   FIG. 3 is a configuration diagram of an inspection apparatus according to the third embodiment of the present invention. Since the inspection apparatus according to the present embodiment and the inspection apparatus according to the first embodiment of FIG. 1 only differ in the installation position of the optical sensor, the same components are denoted by the same reference numerals and description thereof is omitted. Only the different parts will be described.

本実施形態の検査装置では、光センサ27は、半導体ウェハ31を載置するステージ21の所定位置に固定設置されている。ステージ21は、半導体ウェハ31を交換するときに図3に示す位置に移動され、固体撮像素子の検査時には、図4に示す位置に移動される。そこで、半導体ウェハ31の交換時にステージ21が移動されたとき、試験光15の直下位置となる位置に光センサ27を取り付けておく。   In the inspection apparatus of this embodiment, the optical sensor 27 is fixedly installed at a predetermined position of the stage 21 on which the semiconductor wafer 31 is placed. The stage 21 is moved to the position shown in FIG. 3 when the semiconductor wafer 31 is replaced, and is moved to the position shown in FIG. 4 when inspecting the solid-state imaging device. Therefore, when the stage 21 is moved when the semiconductor wafer 31 is replaced, the optical sensor 27 is attached at a position that is directly below the test light 15.

第1の実施形態では、光センサ25をステージ21内に内蔵させたが、本実施形態では、光センサ27はステージ21上に設置され、光センサ27の設置が容易となる。   In the first embodiment, the optical sensor 25 is built in the stage 21, but in the present embodiment, the optical sensor 27 is installed on the stage 21, and the optical sensor 27 is easily installed.

この検査装置を用いて固体撮像素子の検査する場合、半導体ウェハ31を交換するためにステージ21が移動されると、光センサ27の受光面が試験光15を受光する位置となる(図3)。このとき、光源11を制御し、検査に必要な光強度となるように、即ち、光センサ27の検出値が所定値となるように光源制御部14が光源11の電源電圧等の調整を行い、この調整値をメモリ等に保存しておく。このとき、光量調整器12を調整し、必要な光量の基での調整値を求める。   When inspecting a solid-state imaging device using this inspection apparatus, when the stage 21 is moved to replace the semiconductor wafer 31, the light receiving surface of the optical sensor 27 is positioned to receive the test light 15 (FIG. 3). . At this time, the light source 11 controls the light source 11 so that the light intensity necessary for the inspection is obtained, that is, the light source control unit 14 adjusts the power supply voltage of the light source 11 so that the detection value of the optical sensor 27 becomes a predetermined value. The adjustment value is stored in a memory or the like. At this time, the light amount adjuster 12 is adjusted to obtain an adjustment value based on the necessary light amount.

次に、ステージ21が移動されて半導体ウェハ31の固体撮像素子が試験光15の直下位置に来ると(図4)、光源制御部14は、メモリ等に保存されている調整値を用いて光源11の制御を行う。これにより、検査に必要な光強度の試験光15が固体撮像素子に照射され、固体撮像素子の出力信号が制御装置30に取り込まれ、固体撮像素子の良否等が判定される。   Next, when the stage 21 is moved and the solid-state imaging device of the semiconductor wafer 31 comes to a position immediately below the test light 15 (FIG. 4), the light source control unit 14 uses the adjustment value stored in the memory or the like as the light source. 11 is controlled. Thereby, the test light 15 having the light intensity necessary for the inspection is irradiated onto the solid-state image sensor, and the output signal of the solid-state image sensor is taken into the control device 30 to determine whether the solid-state image sensor is good or bad.

本実施形態によれば、第1,第2の実施形態と同様の効果が得られる。   According to this embodiment, the same effects as those of the first and second embodiments can be obtained.

本発明によれば、固体撮像素子の検査に必要な試験光を容易に得ることができるため検査コストの低減を図ることができ、固体撮像素子の検査方法及びその装置として有用である。   According to the present invention, it is possible to easily obtain test light necessary for inspecting a solid-state imaging device, and therefore, the inspection cost can be reduced, which is useful as a solid-state imaging device inspection method and apparatus.

本発明の第1の実施形態に係る固体撮像素子の検査装置の構成図である。1 is a configuration diagram of an inspection apparatus for a solid-state imaging element according to a first embodiment of the present invention. 本発明の第2の実施形態に係る固体撮像素子の検査装置の構成図である。It is a block diagram of the inspection apparatus of the solid-state image sensor which concerns on the 2nd Embodiment of this invention. 本発明の第3の実施形態に係る固体撮像素子の検査装置の半導体ウェハ交換時における構成図である。It is a block diagram at the time of semiconductor wafer replacement | exchange of the inspection apparatus of the solid-state image sensor which concerns on the 3rd Embodiment of this invention. 本発明の第3の実施形態に係る固体撮像素子の検査装置の検査時における構成図である。It is a block diagram at the time of the test | inspection of the test | inspection apparatus of the solid-state image sensor which concerns on the 3rd Embodiment of this invention. 従来の固体撮像素子の検査装置の構成図である。It is a block diagram of the inspection apparatus of the conventional solid-state image sensor.

符号の説明Explanation of symbols

10 光源装置
11 光源
12 光量調整器
14 光源制御部
15 試験光(検査用の光)
20 プローバ装置
21 ステージ
22 プローブカード
22a プローブ針
22b 中心穴
25,26,27 光センサ
30 制御装置
31 固体撮像素子が形成された半導体ウェハ
DESCRIPTION OF SYMBOLS 10 Light source device 11 Light source 12 Light quantity adjuster 14 Light source control part 15 Test light (light for test | inspection)
20 prober device 21 stage 22 probe card 22a probe needle 22b center hole 25, 26, 27 optical sensor 30 control device 31 semiconductor wafer on which solid-state imaging device is formed

Claims (6)

検査対象の固体撮像素子に検査用の光を照射する光源装置と、前記固体撮像素子を載置するステージ及び該固体撮像素子の電極パッドにプローブ針を接触させて該固体撮像素子の出力信号を取得するプローブカードを備えるブローバ装置とを備える検査装置の検査方法において、前記固体撮像素子に照射される前記検査用の光を検出する光センサを前記ブローバ装置内に設け、該光センサの検出値に応じて前記光源装置を制御し所定の検査用の光を前記固体撮像素子に照射させ該固体撮像素子の検査を行うことを特徴とする固体撮像素子の検査方法。   A light source device for irradiating inspection light to a solid-state image sensor to be inspected, a stage on which the solid-state image sensor is mounted, and an electrode pad of the solid-state image sensor to contact an output signal of the solid-state image sensor In an inspection method of an inspection apparatus including a probe card including a probe card to be acquired, an optical sensor for detecting the inspection light irradiated on the solid-state imaging device is provided in the blower apparatus, and a detection value of the optical sensor In accordance with the method, the solid-state image sensor is inspected by controlling the light source device and irradiating the solid-state image sensor with predetermined inspection light. 前記光センサが前記ステージ内またはステージ上に設けられることを特徴とする請求項1に記載の固体撮像素子の検査方法。   The method for inspecting a solid-state imaging device according to claim 1, wherein the optical sensor is provided in or on the stage. 前記光センサが前記プローブカード上に設けられることを特徴とする請求項1に記載の固体撮像素子の検査方法。   The method for inspecting a solid-state imaging device according to claim 1, wherein the optical sensor is provided on the probe card. 検査対象の固体撮像素子に検査用の光を照射する光源装置と、前記固体撮像素子を載置するステージ及び該固体撮像素子の電極パッドにプローブ針を接触させて該固体撮像素子の出力信号を取得するプローブカードを備えるブローバ装置とを備える固体撮像素子の検査装置において、前記ブローバ装置内に設置され前記固体撮像素子に照射される前記検査用の光を検出する光センサと、該光センサの検出値に応じて前記光源装置を制御し所定の検査用の光を前記固体撮像素子に照射させる制御手段とを備えることを特徴とする固体撮像素子の検査装置。   A light source device for irradiating inspection light to a solid-state image sensor to be inspected, a stage on which the solid-state image sensor is mounted, and an electrode pad of the solid-state image sensor to contact an output signal of the solid-state image sensor An inspection apparatus for a solid-state image pickup device including a blower device including a probe card to be acquired, an optical sensor that is installed in the blower device and detects the light for inspection irradiated on the solid-state image pickup device, and the optical sensor An inspection apparatus for a solid-state imaging device, comprising: a control unit that controls the light source device according to a detection value to irradiate the solid-state imaging device with predetermined inspection light. 前記光センサが前記ステージ内またはステージ上に設置されることを特徴とする請求項4に記載の固体撮像素子の検査装置。   The solid-state imaging device inspection apparatus according to claim 4, wherein the optical sensor is installed in or on the stage. 前記光センサが前記プローブカード上に設置されることを特徴とする請求項4に記載の固体撮像素子の検査装置。   The solid-state imaging device inspection apparatus according to claim 4, wherein the optical sensor is installed on the probe card.
JP2005091803A 2005-03-28 2005-03-28 Method for inspecting solid-state imaging element, and its device Pending JP2006275603A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005091803A JP2006275603A (en) 2005-03-28 2005-03-28 Method for inspecting solid-state imaging element, and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005091803A JP2006275603A (en) 2005-03-28 2005-03-28 Method for inspecting solid-state imaging element, and its device

Publications (1)

Publication Number Publication Date
JP2006275603A true JP2006275603A (en) 2006-10-12

Family

ID=37210538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005091803A Pending JP2006275603A (en) 2005-03-28 2005-03-28 Method for inspecting solid-state imaging element, and its device

Country Status (1)

Country Link
JP (1) JP2006275603A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007208253A (en) * 2006-01-09 2007-08-16 Samsung Electronics Co Ltd Image sensor test method and apparatus for it
CN101959081A (en) * 2009-07-15 2011-01-26 金大凤 Device and method for inspecting camera module product
CN105548855A (en) * 2015-12-23 2016-05-04 陕西华经微电子股份有限公司 Testing device of thick film ceramic support used for LED light source packaging and testing method thereof
KR101629838B1 (en) * 2015-03-16 2016-06-13 (주)이즈미디어 Camera module test apparatus and control method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007208253A (en) * 2006-01-09 2007-08-16 Samsung Electronics Co Ltd Image sensor test method and apparatus for it
CN101959081A (en) * 2009-07-15 2011-01-26 金大凤 Device and method for inspecting camera module product
KR101629838B1 (en) * 2015-03-16 2016-06-13 (주)이즈미디어 Camera module test apparatus and control method thereof
CN105548855A (en) * 2015-12-23 2016-05-04 陕西华经微电子股份有限公司 Testing device of thick film ceramic support used for LED light source packaging and testing method thereof

Similar Documents

Publication Publication Date Title
JPH07123212A (en) Method and device for adjustment-controlling light source
JP2006275603A (en) Method for inspecting solid-state imaging element, and its device
JP2012247368A (en) Substrate inspection device, substrate inspection method and storage medium
JP4444838B2 (en) Light intensity adjustment system
JP2006184177A (en) Infrared inspection device and method
WO2018008051A1 (en) Inspection device and inspection method
JP6654704B2 (en) Light source device and driving method of light source device
KR20050049261A (en) Calibration apparatus for inspection object and method there of
KR101298974B1 (en) Apparatus and method for processing images through light sources control and image calibration
JP3810694B2 (en) Pattern inspection apparatus and pattern inspection method
JPH1073865A (en) Power unit for light source
KR20080041792A (en) Apparatus for testing a image sensor
WO2015040894A1 (en) Defect viewing device and defect viewing method
KR20080029206A (en) Vision inspection system that use divided illumination
KR100567798B1 (en) Apparatus for Setting Vision Inspector in Surface Mounting Device And Method for Setting the Same
JP2009276108A (en) Image sensor surface inspection method
JP4030570B2 (en) Image processing light irradiation apparatus and image processing light irradiation method
JP2006253201A (en) Inspection device and optical source apparatus
JP2005024271A (en) Imaging control method and substrate-inspecting apparatus
JP2006170830A (en) Imaging element inspection device
JP6720430B1 (en) Inspection device and inspection method
JP2006324124A (en) Electron beam generating device and tft array substrate inspection device
JP2009156574A (en) Inspection apparatus and inspection method
TW201716854A (en) Mask inspection device and method thereof
JP2005151269A (en) Image scanner

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061127