JP2006269958A - 圧電素子およびその製造方法、インクジェット式記録ヘッド、並びに、インクジェットプリンタ - Google Patents
圧電素子およびその製造方法、インクジェット式記録ヘッド、並びに、インクジェットプリンタ Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 69
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 64
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 29
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 241000877463 Lanio Species 0.000 description 2
- 229910005855 NiOx Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910016062 BaRuO Inorganic materials 0.000 description 1
- 229910018921 CoO 3 Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002835 Pt–Ir Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910003114 SrVO Inorganic materials 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- BSLXDFGQRZUAAR-UHFFFAOYSA-N [Sc].[Pb] Chemical compound [Sc].[Pb] BSLXDFGQRZUAAR-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
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- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
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Abstract
【解決手段】 本発明に係る圧電素子10の製造方法は,
基板1の上方に第1電極4を形成する工程と、
第1電極4の上方に、ペロブスカイト構造を有する圧電体からなる圧電体層5を形成する工程と、
圧電体層5の上方に第2電極6を形成する工程と、を含み、
第1電極4を形成する工程は、スパッタ法により、立方晶(100)に配向するようにニッケル酸ランタン層42を形成する工程を有し、
スパッタ法に用いるターゲットにおけるニッケルのランタンに対する比(Ni/La)は、1より大きく,1.5より小さい。
【選択図】 図1
Description
基板の上方に第1電極を形成する工程と、
前記第1電極の上方に、ペロブスカイト構造を有する圧電体からなる圧電体層を形成する工程と、
前記圧電体層の上方に第2電極を形成する工程と、を含み、
前記第1電極を形成する工程は、スパッタ法により、立方晶(100)に配向するようにニッケル酸ランタン層を形成する工程を有し、
前記スパッタ法に用いるターゲットにおけるニッケルのランタンに対する比(Ni/La)は、1より大きく、1.5より小さい。
前記第1電極を形成する工程は、ニッケル酸ランタンに比べ比抵抗が低い導電材からなる低抵抗層を形成する工程を有することができる。
前記導電材は、金属、該金属の酸化物、および該金属からなる合金のうちの少なくとも1種を含み、
前記金属は、Pt、Ir、Ru、Ag、Au、Cu、Al、およびNiのうちの少なくとも1種であることができる。
前記ニッケル酸ランタン層は、前記低抵抗層の上方に形成されることができる。
前記ニッケル酸ランタン層と前記圧電体層とは、接するように形成されることができる。
前記圧電体は、菱面体晶、または、正方晶と菱面体晶との混晶であり、かつ(100)に配向することができる。
1−1. まず、第1の実施形態に係る圧電素子10について説明する。
2−1. 次に、第1の実施形態に係る圧電素子10を有するインクジェット式記録ヘッドの一実施形態について説明する。図4は、本実施形態に係るインクジェット式記録ヘッドの概略構成を示す側断面図であり、図5は、このインクジェット式記録ヘッドの分解斜視図である。なお、図5は、通常使用される状態とは上下逆に示したものである。
3−1. 次に、第2の実施形態に係るインクジェット式記録ヘッド50を有するインクジェットプリンタの一実施形態について説明する。図8は、本実施形態に係るインクジェットプリンタ600を示す概略構成図である。インクジェットプリンタ600は、紙などに印刷可能なプリンタとして機能することができる。なお、以下の説明では、図8中の上側を「上部」、下側を「下部」と言う。
Claims (9)
- 基板の上方に第1電極を形成する工程と、
前記第1電極の上方に、ペロブスカイト構造を有する圧電体からなる圧電体層を形成する工程と、
前記圧電体層の上方に第2電極を形成する工程と、を含み、
前記第1電極を形成する工程は、スパッタ法により、立方晶(100)に配向するようにニッケル酸ランタン層を形成する工程を有し、
前記スパッタ法に用いるターゲットにおけるニッケルのランタンに対する比(Ni/La)は、1より大きく、1.5より小さい、圧電素子の製造方法。 - 請求項1において、
前記第1電極を形成する工程は、ニッケル酸ランタンに比べ比抵抗が低い導電材からなる低抵抗層を形成する工程を有する、圧電素子の製造方法。 - 請求項2において、
前記導電材は、金属、該金属の酸化物、および該金属からなる合金のうちの少なくとも1種を含み、
前記金属は、Pt、Ir、Ru、Ag、Au、Cu、Al、およびNiのうちの少なくとも1種である、圧電素子の製造方法。 - 請求項2または3において、
前記ニッケル酸ランタン層は、前記低抵抗層の上方に形成される、圧電素子の製造方法。 - 請求項1〜4のいずれかにおいて、
前記ニッケル酸ランタン層と前記圧電体層とは、接するように形成される、圧電素子の製造方法。 - 請求項1〜5のいずれかにおいて、
前記圧電体は、菱面体晶、または、正方晶と菱面体晶との混晶であり、かつ(100)に配向する、圧電素子の製造方法。 - 請求項1〜6のいずれかに記載の圧電素子の製造方法により得られる圧電素子。
- 請求項7に記載の圧電素子を有する、インクジェット式記録ヘッド。
- 請求項8に記載のインクジェット式記録ヘッドを有する、インクジェットプリンタ。
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JP2007273976A (ja) * | 2006-03-10 | 2007-10-18 | Canon Inc | 圧電体素子、それを用いた液体吐出ヘッド、及び、光学素子 |
JP2009234022A (ja) * | 2008-03-27 | 2009-10-15 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びにアクチュエータ |
JP2010030077A (ja) * | 2008-07-25 | 2010-02-12 | Seiko Epson Corp | 液体吐出ヘッドの製造方法 |
JP2010167570A (ja) * | 2009-01-20 | 2010-08-05 | Seiko Epson Corp | 液体噴射ヘッドの製造方法、アクチュエーター装置の製造方法、液体噴射ヘッド及び液体噴射装置 |
JP2011173387A (ja) * | 2010-02-25 | 2011-09-08 | Seiko Epson Corp | 圧電素子、液体噴射ヘッド及び液体噴射装置 |
JP2013056559A (ja) * | 2012-12-27 | 2013-03-28 | Seiko Epson Corp | 液体吐出ヘッドの製造方法 |
US8678566B2 (en) | 2010-03-26 | 2014-03-25 | Seiko Epson Corporation | Piezoelectric element, method for manufacturing the same, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus |
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JP6073600B2 (ja) * | 2012-08-28 | 2017-02-01 | 東芝メディカルシステムズ株式会社 | 超音波プローブおよび圧電振動子 |
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JP2007273976A (ja) * | 2006-03-10 | 2007-10-18 | Canon Inc | 圧電体素子、それを用いた液体吐出ヘッド、及び、光学素子 |
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