JP2006229109A - Semiconductor light emitting device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which keeps a color rendering property and the degradation of brightness is little in a red light emitting element. <P>SOLUTION: In the semiconductor light emitting device, a blue light emitting element 3b emitting a blue light and a red light emitting element 3c emitting a red light are mounted on a mounting surface of a submount element 3a; and a phosphor layer 8 is formed of a resin containing a phosphor to change the wavelength of the light incident from the blue light emitting element 3b, and emits a yellow light. The phosphor layer 8 covers the blue light emitting element 3b and is formed so that only a light extracting surface S1 is exposed opposite to the mounting surface of the red light emitting element 3c. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor light-emitting device including a blue light-emitting element and a red light-emitting element, and in particular, contains a phosphor that converts a part of light emitted from the blue light-emitting element into a yellow color and transmits the light. The present invention relates to a semiconductor light emitting device including a phosphor layer that is mixed with blue and yellow, which is colored by a phosphor, and becomes white, and a method for manufacturing the same.

  Semiconductor light emitting device including a phosphor layer that converts the wavelength of blue light from a blue light emitting element to develop a yellow color, and has a phosphor layer that turns white by mixing the transmitted blue color with the yellow color of the phosphor. There is a device. Although this semiconductor light emitting device can emit white light at low cost, the color rendering property is poor because the emitted light has few red components.

  Patent Document 1 describes a red light emitting element added to improve color rendering. The semiconductor light emitting device described in Patent Document 1 is shown in FIGS.

  In the conventional semiconductor light emitting device 20 shown in FIG. 10, a blue light emitting element 23 and a red light emitting element 24 are mounted side by side on a substrate 22 on which an electrode 21 is provided. The blue light emitting element 23 is covered with a phosphor layer 26 containing a phosphor 25 to form a white LED part 27, and the red light emitting element 24 is covered with a transparent resin layer 28 not containing the phosphor 25, and is red. The LED unit 29 is configured.

Further, in the conventional semiconductor light emitting device 30 shown in FIG. 11, the phosphor layer 26 covers both the blue light emitting element 23 and the red light emitting element 24.
JP 2004-55772 A

  However, in the conventional semiconductor light emitting device 20 shown in FIG. 10, since the phosphor layer 26 covers only the blue light emitting element 23 and the transparent resin layer 28 covers only the red light emitting element 24, the phosphor layer 26 and In order to form the transparent resin layer 28, it is necessary to apply the resin twice in a state where the blue light emitting element 23 and the red light emitting element 24 are mounted on the substrate 22, and the process is complicated.

  In addition, since the conventional semiconductor light emitting device 30 shown in FIG. 11 covers not only the blue light emitting element 23 but also the red light emitting element 24 with the phosphor layer 26, all the light emitted from the red light emitting element 24 is Since the progress is inhibited by the phosphor 25 contained in the phosphor layer 26, the luminance is greatly reduced. In this case, it is necessary to use a red light-emitting element with high power consumption in order to increase luminance, and the semiconductor light-emitting device becomes unsuitable for a battery-driven device.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor light emitting device and a method for manufacturing the same that maintain a color rendering property while reducing a decrease in luminance of a red light emitting element.

  In the semiconductor light emitting device of the present invention, a blue light emitting element that emits blue light and a red light emitting element that emits red light are mounted on a mounting surface, and a part of the light emitted from the blue light emitting element is wavelength-converted to yellow. In the semiconductor light emitting device provided with the wavelength conversion layer that emits light, the wavelength conversion layer covers only the blue light emitting element and only the main light extraction surface that is opposite to the mounting surface side of the red light emitting element is exposed. It is formed so that it may do.

  Further, in the method for manufacturing a semiconductor light emitting device of the present invention, a blue light emitting element that emits blue light and a red light emitting element that emits red light are mounted on a mounting surface, and a part of light emitted from the blue light emitting element has a wavelength. In the method of manufacturing a semiconductor light emitting device provided with a wavelength conversion layer that converts and emits yellow light, a mounting surface in which the red light emitting element and the blue light emitting element having a height lower than the red light emitting element are substantially planar And a wavelength conversion layer forming step in which the thickness of the wavelength conversion layer is formed from the mounting surface to the main light extraction surface of the red light emitting element.

  The wavelength conversion layer covers the blue light-emitting element and is formed so that only the main light extraction surface of the red light-emitting element is exposed. It can be a device.

  In the first invention of the present application, a blue light emitting element that emits blue light and a red light emitting element that emits red light are mounted on the mounting surface, and a part of the light emitted from the blue light emitting element is wavelength-converted to emit yellow light. In the semiconductor light emitting device provided with the wavelength conversion layer, the wavelength conversion layer is formed so as to cover the blue light emitting element and expose only the main light extraction surface opposite to the mounting surface side of the red light emitting element. It is characterized by being.

  Since the wavelength conversion layer covers the blue light emitting element and is formed so that only the main light extraction surface of the red light emitting element is exposed, even if the wavelength of the light emitted from the blue light emitting element is converted, the red Since the light emitted from the main light extraction surface of the light emitting element is not hindered, the reduction in luminance of the red light emitting element can be reduced.

  When forming the wavelength conversion layer, the main light extraction surface of the red light-emitting element can be covered even if the blue light-emitting element is covered by simply adjusting the thickness of the wavelength conversion layer according to the main light extraction surface of the red light-emitting element. It is possible to easily form a wavelength conversion layer that only exposes.

  A second invention of the present application is characterized in that the red light emitting element is formed higher than the blue light emitting element in a state where the blue light emitting element and the red light emitting element are mounted on a substantially flat mounting surface.

  Since the red light emitting element is formed higher than the blue light emitting element, even if the mounting surface is substantially flat, the blue light emitting element can be simply adjusted by adjusting the thickness of the wavelength conversion layer according to the main light extraction surface of the red light emitting element. And a wavelength conversion layer in which only the main light extraction surface of the red light emitting element is exposed can be formed.

  The third invention of the present application is characterized in that the blue light emitting element and the red light emitting element are each provided with a terminal for emitting light.

  Since the light emitting terminal is provided separately for the blue light emitting element and the red light emitting element, the red light emitting element not only contributes to the improvement of color rendering in white light emission, but also turns on or blinks only the red light emitting element. be able to. Accordingly, when the red light emitting element is mounted on a device such as a mobile phone, it can be made to function as a notification means by giving meaning to lighting and blinking. Even in that case, the wavelength conversion layer does not hinder the light emitted from the main light extraction surface of the red light emitting element, so that the decrease in luminance can be reduced.

  According to a fourth aspect of the present invention, a blue light emitting element that emits blue light and a red light emitting element that emits red light are mounted on a mounting surface, and a part of light emitted from the blue light emitting element is wavelength-converted to emit yellow light. In a method of manufacturing a semiconductor light emitting device provided with a wavelength conversion layer, a mounting step of mounting a red light emitting element and a blue light emitting element having a height lower than the red light emitting element on a substantially flat mounting surface, and wavelength conversion And a wavelength conversion layer forming step for forming the layer thickness from the mounting surface to the main light extraction surface of the red light emitting element.

  A blue light emitting element that is lower than the red light emitting element when mounted on a substantially flat mounting surface, and the thickness of the wavelength conversion layer is from the mounting surface to the main light extraction surface of the red light emitting element. Even if it coat | covers, the semiconductor light-emitting device provided with the wavelength conversion layer which only the main light extraction surface of a red light emitting element exposes can be manufactured. Accordingly, since the wavelength conversion layer covers the blue light emitting element and is formed so that only the main light extraction surface of the red light emitting element is exposed, the wavelength of the light emitted from the blue light emitting element can be converted. In addition, since the light emitted from the main light extraction surface of the red light emitting element is not hindered, the luminance of the red light emitting element can be reduced in luminance.

  According to a fifth aspect of the present invention, in the blue light emitting element, an n-type semiconductor and a p-type semiconductor are stacked on a transparent substrate, the n-type semiconductor is provided with an n-side electrode, and the p-type semiconductor is provided with a p-side electrode. A light-emitting element mounted on the mounting surface with the n-side electrode and the p-side electrode as the mounting surface side. After mounting the light-emitting element on the mounting surface in the mounting process, the surface that becomes the main light extraction surface of the transmissive substrate is polished. Thus, the wavelength conversion layer is formed in the wavelength conversion layer forming step to the height adjusted.

  When the blue light emitting element is a flip chip type light emitting element in which an n-type semiconductor and a p-type semiconductor are stacked on a transparent substrate, an n-side semiconductor is provided with an n-side electrode, and a p-type semiconductor is provided with a p-side electrode. By polishing the transparent substrate, a blue light emitting element having a height lower than that of the red light emitting element when mounted on a flat mounting surface can be obtained. Moreover, since the distance which the light radiate | emitted from the blue light emitting element passes the wavelength conversion layer can be adjusted by this grinding | polishing, it can be set as the color nearer to white.

  In a sixth invention of the present application, the wavelength conversion layer forming step is formed to have a thickness from the mounting surface to the main light extraction surface of the red light emitting element, and at a position where the blue light emitting element and the red light emitting element are mounted on the mounting surface. A screen mask provided with a housing part for housing the blue light emitting element and the red light emitting element is placed on the mounting surface with the housing part being aligned with the blue light emitting element and the red light emitting element, and the resin serving as a wavelength conversion layer in the housing part And a wavelength conversion layer is formed by leveling the surface of the screen mask.

  The wavelength conversion layer forming step can be performed using a screen printing method. At that time, the screen mask is formed to have a thickness from the mounting surface to the main light extraction surface of the red light emitting element, and the blue light emitting element and the red light emitting element are disposed at the positions where the blue light emitting element and the red light emitting element are mounted on the mounting surface. By using the one provided with a housing portion for housing the element, it is possible to easily form a wavelength conversion layer that covers the blue light emitting element and exposes only the main light extraction surface of the red light emitting element. This is merely a thickness from the mounting surface to the main light extraction surface of the red light emitting element in the screen mask used when forming the resin conversion layer of the conventional semiconductor light emitting device, and no additional process is required.

  The seventh invention of the present application is characterized in that after the wavelength conversion layer forming step, the surface of the wavelength conversion layer formed by filling the screen mask with a resin is polished.

  Furthermore, after forming the wavelength conversion layer, the main light extraction surface of the red light emitting element is polished, so that when the wavelength conversion layer is formed by the screen printing method, it adheres to the main light extraction surface of the red light emitting element even slightly. The removed resin can be removed and the luminance of the red light emitting element can be prevented from lowering.

(Embodiment)
A configuration of a semiconductor light emitting device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a plan view illustrating a semiconductor light emitting device according to an embodiment of the present invention. FIG. 2 is a vertical sectional view for explaining a semiconductor light emitting device according to an embodiment of the present invention. FIG. 3 is a plan view illustrating the light emitting unit. FIG. 4 is a vertical sectional view for explaining the phosphor layer. FIG. 5 is a front view illustrating the light emitting element.

  As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 includes a lead frame 2, a light emitting unit 3 mounted on the lead frame 2, a wire 4 that electrically connects the lead frame 2 and the light emitting unit 3, and light emission. And a resin package 5 covering the portion 3.

  The lead frame 2 is formed of a plate material obtained by performing Ni / Ag plating treatment or the like on a Cu alloy or the like, and the first electrode portion 2a and the second electrode portion projecting from one side surface of the resin package 5 2b, a third electrode portion 2c and a fourth electrode portion 2d projecting from the other side surface, and a mounting portion 2e on which the light emitting portion 3 is mounted.

  The first electrode portion 2a to the fourth electrode portion 2d protrude to the sides of the resin package 5, bend to the back side of the semiconductor light emitting device 1, and further bend the tip portion outward to It is formed to stretch.

  The light emitting unit 3 is fixed to the mounting unit 2e with silver paste. Here, the light emitting unit 3 will be described in detail with reference to FIGS. 3 and 4.

  As shown in FIGS. 3 and 4, the light emitting unit 3 includes a submount element 3a, three blue light emitting elements 3b, one red light emitting element 3c, and a phosphor layer 8, and emits blue light. The element 3b and the red light emitting element 3c are flip-chip mounted on the submount element.

  The submount element 3a is made of ceramic, and a wiring pattern 3a-1 that is connected to the electrodes provided on the blue light emitting element 3b and the red light emitting element 3c and led out to both ends is provided on the mounting surface that is the upper surface of the submount element 3a. It has been. In the present embodiment, the submount element 3a is a ceramic that easily reflects light from the blue light emitting element 3b and the red light emitting element 3c. However, a zener diode may be configured by an n-type semiconductor and a p-type semiconductor. .

  The wiring pattern 3a-1 is individually provided corresponding to the anode and the cathode provided in each blue light emitting element 3b and red light emitting element 3c. And as shown in FIG. 1, the wire 4 has connected the wiring pattern 3a-1 provided individually, and the 1st electrode part 2a to the 4th electrode part 2d, respectively. Therefore, when a voltage is applied from the first electrode portion 2a to the third electrode portion 2c, each blue light emitting element 3b is turned on, and when a voltage is applied to the fourth electrode portion 2d, the red light emitting element 3c is turned on. To do.

  The blue light emitting element 3b and the red light emitting element 3c are obtained by stacking an n-type semiconductor and a p-type semiconductor on a transparent substrate, and providing an n-side electrode on the n-type semiconductor and a p-side electrode on the p-type semiconductor. is there. Here, the blue light emitting element 3b and the red light emitting element 3c will be described in detail with reference to FIG. In FIG. 5, the blue light-emitting element 3 b and the red light-emitting element 3 c have the same basic configuration and will be referred to as a light-emitting element for convenience.

  As shown in FIG. 5, the light-emitting element 7 includes a n-type semiconductor layer 7b formed of an n-type semiconductor, a light-emitting layer 7c that emits light, and a p-type semiconductor formed of a p-type semiconductor on a transparent substrate 7a such as sapphire. The light emitting layer 7c and the p-type semiconductor layer 7d are partially removed by etching to expose the n-type semiconductor layer 7b, and the n-side electrode 7e is formed on the exposed n-type semiconductor layer 7b. The p-type semiconductor layer 7d is provided with a p-side electrode 7f. The light-emitting element 7 is mounted on the submount element 3a so that the n-side electrode 7e and the p-side electrode 7f are on the mounting surface side, and the upper surface of the transparent substrate 7a on the opposite side is the main light extraction surface S1. . The height of the light emitting element 7 is about 150 μm in the case of the red light emitting element 3c, and is about 60 μm in the case of the blue light emitting element 3b.

  Returning to FIG. 4, the phosphor layer 8 is a wavelength conversion layer formed of a resin containing a phosphor (not shown) that changes the wavelength of light from the blue light emitting element 3 b to develop yellow. The phosphor layer 8 is formed in a rectangular shape in plan view so as to cover the blue light emitting element 3b on the mounting surface of the submount element 3a and to expose only the main light extraction surface S1 of the red light emitting element 3c. Has been. Therefore, the phosphor layer 8 has a thickness of about 150 μm since it extends from the mounting surface of the submount element 3a to the main light extraction surface S1 of the red light emitting element 3c.

  As shown in FIGS. 1 and 2, the resin package 5 is formed of a resin such as transparent epoxy. The resin package 5 is formed in a rectangular shape in plan view, and the first electrode portion 2a and the second electrode portion 2b are formed from one side surface, and the third electrode portion 2c and the fourth electrode portion are formed from the other side surface. The base part 5a from which 2d protruded and the lens part 5b formed in the substantially hemispherical shape are provided.

  A method of manufacturing the semiconductor light emitting device according to the embodiment of the present invention configured as described above will be described with reference to FIGS. 6 to 8 are views for explaining a method of manufacturing a semiconductor light emitting device according to the embodiment of the present invention.

  First, a blue light emitting element 3b and a red light emitting element 3c are prepared. As shown in FIG. 6, the blue light emitting elements 3b are mounted three by three on the flat aggregate substrate 10 serving as the base of the submount element 3a through Au bumps so as to have the arrangement shown in FIG. To do.

  The main light extraction surface S1 of the transparent substrate 7a (see FIG. 5) of the blue light emitting element 3b mounted on the collective substrate 10 is polished, and the height of each blue light emitting element 3b from the surface to be the mounting surface of the submount element 3a. Adjust so that is uniform. The chromaticity of white is determined by the distance that light passes through the phosphor layer 8 when the blue light emitting element 3b is coated on the phosphor layer 8. For example, if the distance from the tips of the n-side electrode 7e and the p-side electrode 7f of the blue light emitting element 3b to the main light extraction surface S1 of the transparent substrate 7a is short, when the phosphor layer 8 is covered, light is transmitted from the transparent substrate 7a. The distance that the light is emitted and passes through the phosphor layer 8 becomes long, and the excitation of the phosphor occurs much, so that yellow becomes a strong white color. Therefore, when a plurality of blue light emitting elements 3b are prepared, the main light extraction surface S1 of the transparent substrate 7a of the blue light emitting element 3b is polished to adjust the white chromaticity, thereby increasing the height of each blue light emitting element 3b. And the distance through which the light passes through the phosphor layer 8 is matched. By this polishing, the blue light emitting element 3b, which was originally about 90 μm, becomes about 60 μm by this polishing.

  Next, as shown in FIG. 7, the red light emitting elements 3c are mounted on the collective substrate 10 via Au bumps at respective predetermined positions, thereby completing the mounting process.

  When the mounting process is completed, a wavelength conversion layer forming process for forming the phosphor layer 8 which is a wavelength conversion layer is performed. This step is performed using a screen printing method. First, as shown in FIG. 8, the screen mask 9 is disposed above the collective substrate 10 on which the red light emitting element 3c and the blue light emitting element 3b are mounted.

  The screen mask 9 is formed to have a thickness from the mounting surface of the collective substrate 10 to be the submount element 3a to the main light extraction surface S1 of the red light emitting element 3c, and the blue light emitting element 3b and the red light emitting element 3c are mounted on the mounting surface. It is the board which provided the accommodating part 9a in the made position.

  This screen mask 9 is placed on the submount element 3a so that the red light emitting element 3c and the blue light emitting element 3b are accommodated in the accommodating portion 9a. The housing portion 9a is filled with a resin containing a phosphor, and the upper surface of the screen mask 9 is leveled with a squeegee or the like. When the resin containing the phosphor is cured, the phosphor layer 8 is formed.

  The screen mask 9 is formed to have a thickness from the mounting surface of the submount element 3a to the main light extraction surface S1 of the red light emitting element 3c, and is accommodated in a position where the blue light emitting element 3b and the red light emitting element 3c are mounted on the mounting surface. By using what provided the part 9a, the fluorescent substance layer 8 which coat | covered the blue light emitting element 3b and exposed only the main light extraction surface S1 of the red light emitting element 3c can be formed easily.

  Further, the surface of the phosphor layer 8 formed by filling the accommodating portion 9a of the screen mask 9 with resin is polished. By polishing the surface of the phosphor layer 8, the exposed main light extraction surface S1 of the red light emitting element 3c is polished. By doing so, when the phosphor layer 8 is formed by the screen printing method, the resin adhering to the main light extraction surface S1 of the red light emitting element 3c can be removed even slightly, and the luminance of the red light emitting element 3c can be further improved. A decrease can be prevented.

  When the polishing of the phosphor layer 8 is completed, the collective substrate 10 is diced into individual pieces of submount elements 3a on which the blue light emitting element 3b and the red light emitting element 3c are mounted.

  Then, the phosphor layer 8 is provided, and the submount element 3a as a single piece is mounted on the mounting portion 2e of the lead frame 2 via an adhesive such as Ag paste. The wiring pattern 3a-1 of the submount element 3a and the first electrode portion 2a to the fourth electrode portion 2d of the lead frame 2 are connected by wires 4 respectively. Finally, the resin package 5 is molded by a transfer molding method.

  Next, a usage state of the semiconductor light emitting device according to the embodiment of the present invention will be described.

  First, when white light is emitted, a predetermined voltage is applied from the first electrode portion 2a to the fourth electrode portion 2d. By applying a voltage, a current flows through each of the one red light emitting element 3c and the three blue light emitting elements 3b to emit light. When the light emitted from the blue light emitting element 3b passes through the phosphor layer 8, the phosphor contained in the phosphor layer 8 is excited to emit yellow light and the blue light that has passed through the phosphor layer 8 as it is. The mixed colors become white and enter the resin package 5. The phosphor layer 8 is formed not only around the blue light emitting element 3b but also around the red light emitting element 3c. Therefore, not only around the blue light emitting element 3b but also around the red light emitting element 3c is white. It seems to emit light. The light emitted from the main light extraction surface S1 of the red light emitting element 3c is incident on the resin package 5 without hindering the progress of light because the main light extraction surface S1 is exposed from the phosphor layer 8. be able to. Therefore, since the light emitted from the main light extraction surface S1 is not reduced in luminance by the phosphor layer 8, the phosphor layer 8 is formed around the side of the red light emitting element 3c, but the main light extraction is performed. By exposing the surface S <b> 1 from the phosphor layer 8, the luminance reduction of the red light emitting element can be reduced while maintaining the color rendering properties as an illumination device.

  Moreover, as a use state of the semiconductor light emitting device 1, for example, it can be used as a lighting device with high color rendering properties, and in addition, the semiconductor light emitting device 1 can be used by applying a voltage only to the fourth electrode portion 2d corresponding to the red light emitting element 3c. Since the light emitting device 1 can light only the red light emitting element 3c, it can function as a notification means. Even in such a case, the phosphor layer 8 does not hinder the light emitted from the main light extraction surface S1 of the red light emitting element 3c, so that the reduction in luminance can be reduced.

  In the present embodiment, as shown in FIG. 4, the height from the mounting surface of the submount element 3a to the surface of the phosphor layer 8 is substantially equal to the height from the main light extraction surface S1 of the red light emitting element 3c. However, as shown in FIG. 9, the phosphor layer 11 may be formed so as to be lower than the main light extraction surface S1 of the red light emitting element 3c. Even in such a case, the light emitted from the main light extraction surface S1 of the red light emitting element 3c is not hindered by the phosphor layer 11, so that the luminance reduction of the red light emitting element 3c is reduced while maintaining the color rendering. There is no change in that it can.

  The present invention can reduce the luminance reduction of the red light emitting element while maintaining the color rendering, and thus relates to a semiconductor light emitting device including a blue light emitting element and a red light emitting element, and in particular, emitted from the blue light emitting element. It is suitable for a semiconductor light emitting device that includes a phosphor that converts the wavelength of the emitted light and has a phosphor layer in which the transmitted blue color and the yellow color of the phosphor are mixed to become white.

The top view explaining the semiconductor light-emitting device concerning embodiment of this invention Vertical sectional view illustrating a semiconductor light emitting device according to an embodiment of the present invention The top view explaining the light emission part of the semiconductor light-emitting device concerning embodiment of this invention Vertical sectional view illustrating a phosphor layer of a semiconductor light emitting device according to an embodiment of the present invention Front view illustrating a light-emitting element of a semiconductor light-emitting device according to an embodiment of the present invention The figure explaining the manufacturing method of the semiconductor light-emitting device concerning embodiment of this invention The figure explaining the manufacturing method of the semiconductor light-emitting device concerning embodiment of this invention The figure explaining the manufacturing method of the semiconductor light-emitting device concerning embodiment of this invention Vertical sectional view illustrating a phosphor layer of a semiconductor light emitting device according to another embodiment of the present invention The figure explaining the conventional semiconductor light-emitting device The figure explaining the conventional semiconductor light-emitting device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Lead frame 2a 1st electrode part 2b 2nd electrode part 2c 3rd electrode part 2d 4th electrode part 2e Mounting part 3 Light emitting part 3a Submount element 3a-1 Wiring pattern 3b Blue light emitting element 3c Red light emitting element 4 Wire 5 Resin package 5a Base part 5b Lens part 7 Light emitting element 7a Transparent substrate 7b N type semiconductor layer 7c Light emitting layer 7d P type semiconductor layer 7e N side electrode 7f P side electrode 8 Phosphor layer 9 Screen mask 9a Housing part 10 Collective substrate 11 Phosphor layer S1 Main light extraction surface

Claims (7)

A blue light-emitting element that emits blue light and a red light-emitting element that emits red light are mounted on the mounting surface, and a wavelength conversion layer that converts a part of the light emitted from the blue light-emitting element to emit yellow light is provided. In a semiconductor light emitting device,
The wavelength conversion layer is formed so as to cover only the blue light emitting element and to expose only a main light extraction surface that is opposite to the mounting surface side of the red light emitting element. Light emitting device. 2. The red light emitting element is formed higher than the blue light emitting element in a state where the blue light emitting element and the red light emitting element are mounted on the mounting surface which is substantially flat. Semiconductor light emitting device. The semiconductor light-emitting device according to claim 1, wherein the blue light-emitting element and the red light-emitting element are individually provided with terminals that emit light. A blue light-emitting element that emits blue light and a red light-emitting element that emits red light are mounted on the mounting surface, and a wavelength conversion layer that converts a part of the light emitted from the blue light-emitting element to emit yellow light is provided. In the manufacturing method of the semiconductor light emitting device,
A mounting step of mounting the red light emitting element and the blue light emitting element having a height lower than that of the red light emitting element on a mounting surface having a substantially flat surface;
And a wavelength conversion layer forming step of forming the wavelength conversion layer from the mounting surface to the main light extraction surface of the red light emitting element. The blue light emitting element includes an n-type semiconductor and a p-type semiconductor stacked on a transmissive substrate, the n-type semiconductor is provided with an n-side electrode, and the p-type semiconductor is provided with a p-side electrode. A light-emitting element mounted on the mounting surface with the p-side electrode as the mounting surface side;
After the light emitting element is mounted on the mounting surface in the mounting step, the height that is adjusted by polishing the surface that becomes the main light extraction surface of the transmissive substrate is adjusted in the wavelength conversion layer forming step. 5. The method of manufacturing a semiconductor light emitting device according to claim 4, wherein a wavelength conversion layer is formed. The wavelength conversion layer forming step is formed to a thickness from the mounting surface to the main light extraction surface of the red light emitting element, and the blue light emitting element and the red light emitting element are mounted at the position where the mounting surface is mounted. A screen mask provided with an accommodating portion for accommodating the blue light emitting element and the red light emitting element is placed on the mounting surface with the accommodating portion aligned with the blue light emitting element and the red light emitting element, and 6. The method of manufacturing a semiconductor light emitting device according to claim 4, wherein the wavelength conversion layer is formed by filling a resin to be a wavelength conversion layer and leveling a surface of the screen mask. The method of manufacturing a semiconductor light emitting device according to claim 6, wherein the surface of the wavelength conversion layer formed by filling the screen mask with a resin is polished after the wavelength conversion layer forming step.

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