JP2006186245A - トンネル酸化膜の窒化処理方法、不揮発性メモリ素子の製造方法および不揮発性メモリ素子、ならびにコンピュータプログラムおよび記録媒体 - Google Patents
トンネル酸化膜の窒化処理方法、不揮発性メモリ素子の製造方法および不揮発性メモリ素子、ならびにコンピュータプログラムおよび記録媒体 Download PDFInfo
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- 238000005121 nitriding Methods 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000004590 computer program Methods 0.000 title claims description 5
- 239000007789 gas Substances 0.000 claims abstract description 83
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 51
- 150000004767 nitrides Chemical class 0.000 claims abstract description 31
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 16
- 238000009832 plasma treatment Methods 0.000 claims abstract description 14
- 238000011282 treatment Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000013500 data storage Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 35
- 229910052757 nitrogen Inorganic materials 0.000 description 18
- 230000014759 maintenance of location Effects 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 241000293849 Cordylanthus Species 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical compound [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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Abstract
【解決手段】不揮発性メモリ素子におけるトンネル酸化膜102に窒化処理を施すに際し、窒素ガスを含む処理ガスを用いたプラズマ処理により、トンネル酸化膜の表面部分に窒化領域103を形成する。
【選択図】図1
Description
図1は、本発明に係るトンネル酸化膜の窒化処理方法を説明するための断面図である。この窒化処理は、例えば、EPROM、EEPROM、フラッシュメモリ等の不揮発性メモリ素子の製造工程の一環として行われる。
プラズマ窒化処理を施したトンネル酸化膜102の上にフローティングゲート104となるポリシリコン膜を形成し、その上に酸化膜、窒化膜、酸化膜を順次形成し、さらにその上にコントロールゲート109となるポリシリコン膜、またはポリシリコンとタングステンシリサイド等との積層膜を成膜する。この際の成膜は、例えばCVDにより行われる。
以上の工程により、図2に示す構造のメモリセルを有する不揮発性メモリ素子が形成される。
図3は、本発明に係るトンネル酸化膜の窒化処理方法を実施するためのプラズマ処理装置の一例を模式的に示す断面図である。
2…サセプタ
3…支持部材
5…ヒータ
15…ガス導入部材
16…ガス供給系
17…Arガス供給源
18…N2ガス供給源
23…排気管
24…排気装置
25…搬入出口
26…ゲートバルブ
28…マイクロ波透過板
29…シール部材
31…平面アンテナ部材
32…マイクロ波放射孔
37…導波管
37a…同軸導波管
37b…矩形導波管
39…マイクロ波発生装置
40…モード変換器
50…プロセスコントローラ
100…プラズマ処理装置
101…Si基板
102…トンネル酸化膜
103…窒化領域
104…フローティングゲート
108…ONO構造の誘電体膜
109…コントロールゲート
111…側壁酸化膜
W…ウエハ(基板)
Claims (19)
- 不揮発性メモリ素子におけるトンネル酸化膜に窒化処理を施す方法であって、
窒素ガスを含む処理ガスを用いたプラズマ処理により、前記トンネル酸化膜の表面部分に窒化領域を形成することを特徴とするトンネル酸化膜の窒化処理方法。 - 前記プラズマ処理は、複数のスロットを有する平面アンテナにて処理室内にマイクロ波を導入してプラズマを発生させるプラズマ処理装置を用いて行われることを特徴とする請求項1に記載のトンネル酸化膜の窒化処理方法。
- 前記処理ガスは、希ガスを含むことを特徴とする請求項1または請求項2に記載のトンネル酸化膜の窒化処理方法。
- 前記希ガスはArガスであることを特徴とする請求項3に記載のトンネル酸化膜の窒化処理方法。
- 前記窒化領域のNドーズ量は、1×1015atoms/cm2以上であることを特徴とする請求項1から請求項3のいずれか1項に記載のトンネル酸化膜の窒化処理方法。
- 前記プラズマ処理は、6.7〜266Paの圧力で実施されることを特徴とする請求項1から請求項5のいずれか1項に記載のトンネル酸化膜の窒化処理方法。
- シリコン基板上にトンネル酸化膜を形成する工程と、
窒素ガスを含む処理ガスを用いたプラズマ処理により、前記トンネル酸化膜の表面部分に窒化領域を形成する工程と、
前記トンネル酸化膜の上にフローティングゲートを形成する工程と、
前記フローティングゲートの上に誘電体膜を形成する工程と
前記誘電体膜の上にコントロールゲートを形成する工程と、
前記フローティングゲートおよび前記コントロールゲートの側壁に側壁酸化膜を形成する工程と、
を有することを特徴とする不揮発性メモリ素子の製造方法。 - 前記プラズマ処理は、複数のスロットを有する平面アンテナにて処理室内にマイクロ波を導入してプラズマを発生させるプラズマ処理装置を用いて行われることを特徴とする請求項7に記載の不揮発性メモリ素子の製造方法。
- 前記処理ガスは、希ガスを含むことを特徴とする請求項7または請求項8に記載の不揮発性メモリ素子の製造方法。
- 前記希ガスはArガスであることを特徴とする請求項9に記載の不揮発性メモリ素子の製造方法。
- 前記窒化領域のNドーズ量は、1×1015atoms/cm2以上であることを特徴とする請求項7から請求項10のいずれか1項に記載の不揮発性メモリ素子の製造方法。
- 前記プラズマ処理は、6.7〜266Paの圧力で実施されることを特徴とする請求項7から請求項11のいずれか1項に記載の不揮発性メモリ素子の製造方法。
- シリコン基板と、
前記シリコン基板の上に形成されたトンネル酸化膜と、
前記トンネル酸化膜の上に形成されたフローティングゲートと、
前記フローティングゲートの上に形成された誘電体膜と、
誘電体膜の上に形成されたコントロールゲートと、
前記フローティングゲートおよび前記コントロールゲートの側壁に形成された側壁酸化膜と
を具備する不揮発性メモリ素子であって、
前記トンネル酸化膜は、その表面部分に、窒素ガスを含む処理ガスを用いたプラズマ処理により形成された窒化領域を有することを特徴とする不揮発性メモリ素子。 - 前記窒化領域は、複数のスロットを有する平面アンテナにて処理室内にマイクロ波を導入してプラズマを発生させるプラズマ処理装置を用いて形成されたものであることを特徴とする請求項13に記載の不揮発性メモリ素子。
- 前記窒化領域は、窒素ガスおよび希ガスを含む処理ガスを用いたプラズマ処理により形成されたものであることを特徴とする請求項13または請求項14に記載の不揮発性メモリ素子。
- 前記希ガスはArガスであることを特徴とする請求項15に記載の不揮発性メモリ素子。
- 前記窒化領域のNドーズ量は、1×1015atoms/cm2以上であることを特徴とする請求項15から請求項16のいずれか1項に記載の不揮発性メモリ素子。
- 窒素ガスを含む処理ガスを用いたプラズマ処理により、不揮発性メモリ素子のトンネル酸化膜の表面部分に窒化領域が形成されるように、コンピュータがプラズマ処理装置を制御するソフトウエアを含むコンピュータプログラム。
- 窒素ガスを含む処理ガスを用いたプラズマ処理により、不揮発性メモリ素子のトンネル酸化膜の表面部分に窒化領域が形成されるように、コンピュータがプラズマ処理装置を制御するソフトウエアを含む記録媒体。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2004380705A JP2006186245A (ja) | 2004-12-28 | 2004-12-28 | トンネル酸化膜の窒化処理方法、不揮発性メモリ素子の製造方法および不揮発性メモリ素子、ならびにコンピュータプログラムおよび記録媒体 |
CN2010101638948A CN101834133B (zh) | 2004-12-28 | 2005-12-22 | 氧化膜的氮化处理方法和等离子体处理装置 |
PCT/JP2005/023597 WO2006070685A1 (ja) | 2004-12-28 | 2005-12-22 | トンネル酸化膜の窒化処理方法、不揮発性メモリ素子の製造方法および不揮発性メモリ素子、ならびに制御プログラムおよびコンピュータ読取可能な記憶媒体 |
KR1020077014617A KR20070086697A (ko) | 2004-12-28 | 2005-12-22 | 터널 산화막의 질화 처리 방법, 불휘발성 메모리 소자의제조 방법, 불휘발성 메모리 소자, 제어 프로그램 및컴퓨터 판독 가능한 기억 매체 |
US11/813,043 US20080093658A1 (en) | 2004-12-28 | 2005-12-22 | Method for Nitriding Tunnel Oxide Film, Method for Manufacturing Non-Volatile Memory Device, Non-Volatile Memory Device, Control Program and Computer-Readable Recording Medium |
CN200580045366XA CN101095224B (zh) | 2004-12-28 | 2005-12-22 | 隧道氧化膜的氮化处理方法、非易失性存储元件的制造方法和非易失性存储元件,以及控制程序和计算机可读取的存储介质 |
TW094146774A TWI390632B (zh) | 2004-12-28 | 2005-12-27 | Nitriding treatment of tunneling oxide film |
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JP2004380705A JP2006186245A (ja) | 2004-12-28 | 2004-12-28 | トンネル酸化膜の窒化処理方法、不揮発性メモリ素子の製造方法および不揮発性メモリ素子、ならびにコンピュータプログラムおよび記録媒体 |
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US (1) | US20080093658A1 (ja) |
JP (1) | JP2006186245A (ja) |
KR (1) | KR20070086697A (ja) |
CN (2) | CN101834133B (ja) |
TW (1) | TWI390632B (ja) |
WO (1) | WO2006070685A1 (ja) |
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KR100933835B1 (ko) * | 2007-11-12 | 2009-12-24 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조 방법 |
JP2011040533A (ja) * | 2009-08-10 | 2011-02-24 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
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KR20090025780A (ko) * | 2007-09-07 | 2009-03-11 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조 방법 |
JP5232425B2 (ja) * | 2007-09-10 | 2013-07-10 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
US20090309150A1 (en) * | 2008-06-13 | 2009-12-17 | Infineon Technologies Ag | Semiconductor Device And Method For Making Semiconductor Device |
US8501610B2 (en) * | 2009-04-28 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memories and methods of fabrication thereof |
CN104733296B (zh) * | 2013-12-24 | 2017-12-12 | 北京兆易创新科技股份有限公司 | 一种快闪存储器隧道绝缘层的制作方法 |
KR102263315B1 (ko) | 2014-08-06 | 2021-06-15 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조방법 |
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CN104992902A (zh) * | 2015-05-27 | 2015-10-21 | 上海华力微电子有限公司 | 一种提高隧道氧化层可靠性的方法 |
CN105206581B (zh) * | 2015-08-31 | 2018-10-16 | 上海华力微电子有限公司 | 一种sonos器件中ono结构的制造方法 |
JP7173082B2 (ja) * | 2020-04-17 | 2022-11-16 | 信越半導体株式会社 | 気相成長用のシリコン単結晶基板、気相成長基板及びこれらの製造方法 |
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- 2005-12-22 WO PCT/JP2005/023597 patent/WO2006070685A1/ja not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
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KR20070086697A (ko) | 2007-08-27 |
CN101095224B (zh) | 2010-06-16 |
TWI390632B (zh) | 2013-03-21 |
WO2006070685A1 (ja) | 2006-07-06 |
CN101095224A (zh) | 2007-12-26 |
CN101834133A (zh) | 2010-09-15 |
US20080093658A1 (en) | 2008-04-24 |
TW200633065A (en) | 2006-09-16 |
CN101834133B (zh) | 2012-01-25 |
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