JP2006143895A - Liquid crystal composition and electrooptic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal composition designed to have a higher response speed in a TN mode and to provide an electrooptic device. <P>SOLUTION: The liquid crystal composition is characterized in that it is prepared by adding a chiral material and an ultraviolet-curing liquid crystal to a nematic liquid crystal. The composition is embodied by one characterized in that it is prepared by adding a chiral material and an ultraviolet-curing liquid crystal to a nematic liquid crystal and the amount of the ultraviolet-curing liquid crystal is 5 to 10 wt.% based on the nematic liquid crystal. These compositions may be ones characterized in that the nematic liquid crystal has positive dielectric anisotropy. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention provides a liquid crystal composition comprising a mixture of a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal, and a light control layer comprising a mixture of a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal. The present invention relates to a liquid crystal electro-optical device that is held and operated in a twisted nematic mode.

  Currently, liquid crystal electro-optic devices are display devices for OA equipment such as projection televisions, small televisions, personal computers, word processors, EWS, and display devices for portable information terminals such as calculators, mobile phones, electronic books, electronic notebooks, etc. In general, a twisted nematic mode (hereinafter referred to as TN mode) in which the rubbing directions of the upper and lower substrates are shifted so as to be positioned at 90 ° is widely used.

  In the TN mode, the liquid crystal composition is sandwiched between the first substrate and the second substrate having electrodes on the substrate, and an electric field is applied to the liquid crystal composition by the electrodes on the substrate, and the dielectric of the liquid crystal material itself. The state of the liquid crystal molecules is changed by the anisotropy of the rate, and the electro-optic effect accompanying the change of the state of the liquid crystal molecules is utilized.

  In the TN mode using nematic liquid crystal widely used in liquid crystal electro-optical devices, the response time of the liquid crystal is several tens of msec. If high-speed response such as video display or field sequential method is required, the response of the liquid crystal Since the speed becomes insufficient, a liquid crystal material capable of a further high-speed response is required.

In addition, a liquid crystal composition formed by a composite of a nematic liquid crystal material and a polymerizable monomer is polymerized and cured in a state aligned along an electric field, so that no voltage is applied after polymerization and curing. It is also known that the alignment state of liquid crystal molecules is maintained. (Patent Document 1)
JP-A-10-239676

However, in the technique described in Patent Document 1, since the response speed of the liquid crystal is insufficient, when an operation mode that requires a high-speed response such as a moving image display or a field sequential method is driven in the TN mode, The response cannot keep up.
An object of the present invention is to provide a liquid crystal electro-optical device in which the response speed of the TN mode is increased in view of the above-described problems of the prior art.

  A liquid crystal composition comprising a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal, and a light control layer supported between a pair of substrates having electrodes, the light control layer comprising: A liquid crystal electro-optical device characterized by having a mixture of a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal, and this speeds up the response of the liquid crystal and causes a problem as a liquid crystal electro-optical device. Is a solution.

The nematic liquid crystal may be a biphenyl compound, a terphenyl compound, a phencyclohexane compound, a birimidine compound, a fluorine compound, a tolan compound, a fluorine compound, or the like, and a material having positive dielectric anisotropy may be used. In addition, by shifting the rubbing direction of the upper and lower substrates so as to be positioned at 90 ° in the TN mode, the orientation direction of the liquid crystal molecules is obtained by being twisted by 90 ° between the upper and lower substrates, but the nematic liquid crystal alone has a stable twisted state. To get inadequate,
Affects display quality such as contrast reduction. Therefore, a chiral material having a twisted molecular structure composed of a cyanobiphenyl derivative, a bisaryl derivative, an ester derivative, etc. having a chiral compound so that the liquid crystal molecule can be rotated in either the right direction or the left direction, Depending on the material, nematic liquid crystal added with 0.05% to 0.5% may be used. However, it goes without saying that the tilt direction of the pretilt and the twist direction of the chiral material need to coincide with each other.

  The ultraviolet curable liquid crystal contains a compound such as acrylate or methacrylate, and if the liquid crystal phase expression temperature is high, it is difficult to handle because it easily causes thermal polymerization. Therefore, a material having a liquid crystal phase near room temperature may be used. When the addition amount of the ultraviolet curable liquid crystal is small, the response speed is slow, and when the addition amount is large, the contrast is lowered. Therefore, it is desirable to use the addition amount of 5 wt% to 10 wt% although it varies depending on the material.

  According to the liquid crystal electro-optical device of the present invention configured as described above, the response when the liquid crystal is driven in the TN mode can be accelerated, so that a high-speed response such as a moving image display or a field sequential method is required. The response speed of the liquid crystal can be improved in various operation modes.

  The best mode for carrying out the invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention should not be construed as being limited to the description of the embodiments. In the drawings, common portions are denoted by the same reference numerals, and detailed description thereof is omitted.

(First embodiment)
In this embodiment, a manufacturing method of a liquid crystal electro-optical device including a mixture of a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal is shown with reference to FIGS.

  First, as illustrated in FIG. 1A, a transparent conductive film 103 is formed by a sputtering method or an evaporation method over a light-transmitting substrate 101 or 102 such as a glass substrate, a quartz substrate, or a plastic substrate. As the transparent conductive film 103, an oxide film of indium and tin (Indium-Tin-Oxide), tin oxide, zinc oxide, or the like may be used.

  Next, a resist resin 104 (ultraviolet photosensitive resin) is applied onto the transparent conductive film 103 by spin coating and calcined, and then the resist resin 104 is exposed using an electrode mask with a known exposure machine, Development with alkaline developer and washing with running water. As the alkali developer, an organic alkali such as trimethylammonium hydride or tetramethylammonium hydroxide, sodium carbonate, or the like may be used.

  Next, as shown in FIG. 1B, etching of the uncovered portion of the transparent conductive film 103 is performed with an etchant to form an electrode pattern. As the etchant, an aqueous hydrochloric acid solution, an aqueous solution of hydrochloric acid and nitric acid, ferric chloride, or the like may be used to increase the reactivity by heating as necessary. Further, a chemical dry etching method using gas plasma may be used. After etching, the resist resin 104 is removed using a stripping solution as shown in FIG. 1C, and baking is performed to increase the transmittance of the transparent conductive film 103 and to decrease the resistivity. Here, the substrates 101 and 102 on which the electrodes of the transparent conductive film 103 are formed are referred to as substrates 110 and 111 having electrodes, respectively.

  As shown in FIG. 1D, the substrates 110 and 111 having electrodes are washed, and polyimide resin 105 is printed on the electrodes by offset printing or spin-coated by a spinner, and then baked. After baking, the film surface of the polyimide resin 105 is subjected to an alignment treatment using a rubbing method in which the surface of the polyimide resin 105 is rubbed with a rubbing cloth such as felt or cotton, or photo-alignment, and then washed. As the polyimide resin 105, a polyimide resin in which polyamic acid is dissolved in a solvent in which N-methyl-2-pyrrolidone or the like and cellosolve acetate are mixed, polyimide resin in which polyamic acid is imidized and dissolved in the solvent, or the like may be used. .

  Next, the sealing material 106 mixed with a cylindrical or spherical silica-based gap holding material is formed on the substrate 110 having one electrode by a dispenser or screen printing with the sealing material 106 on the outside of the electrode. As the sealant 106, an epoxy resin-based, phenol resin-based, or acrylic resin-based thermosetting or ultraviolet curable material may be used.

  A spacer for maintaining a gap in the cell is mixed with an alcohol-based solvent. As the solvent, a water / alcohol mixed solvent may be used. The mixed solvent is sprayed with a spacer (not shown) on the substrate 111 having the other electrode by a spin coating method. The spacer to be dispersed may be a resin type spacer or a silica type spacer as long as it is a spherical type. The spraying is not limited to the wet spraying but may be a dry spraying in which a powdery spacer is sprayed on the substrate with an air flow such as dry air or compressed dry nitrogen. Further, a photo spacer may be formed on the substrate by a known method.

  Next, bonding is performed so that the rubbing direction of the substrate 110 having the electrode on which the pattern of the sealant 106 is formed and the substrate 111 having the electrode on which the spacer is dispersed is shifted by 90 °, and pressure is applied with a liquid crystal panel seal firing jig. While doing, heat press in a clean oven. Alternatively, hot pressing is performed while applying pressure on a hot plate. The substrate after hot pressing is cut into a panel size so that the electrodes can be taken out.

  An ultraviolet curable liquid crystal is added to the nematic liquid crystal to which the chiral material is added, and the liquid crystal composition 112 is manufactured. It is confirmed that the response speed becomes slow when the addition amount of the ultraviolet curable liquid crystal is small, and it is confirmed that the contrast cannot be obtained when the addition amount is large. It is desirable to use with the addition amount of%.

  The nematic liquid crystal may be a biphenyl compound, a terphenyl compound, a phencyclohexane compound, a birimidine compound, a fluorine compound, a tolan compound, a fluorine compound, or the like, and a material having positive dielectric anisotropy may be used. In addition, by shifting the rubbing direction of the upper and lower substrates so as to be positioned at 90 ° in the TN mode, the orientation direction of the liquid crystal molecules is obtained by being twisted by 90 ° between the upper and lower substrates, but the nematic liquid crystal alone has a stable twisted state. It is insufficient to obtain and affects display quality such as a reduction in contrast. Therefore, a chiral material having a twisted molecular structure composed of a cyanobiphenyl derivative, a bisaryl derivative, an ester derivative, etc. having a chiral compound so that the liquid crystal molecule can be rotated in either the right direction or the left direction, Depending on the material, nematic liquid crystal added with 0.05% to 0.5% may be used. However, the tilt direction of the pretilt and the twist direction of the chiral material must be matched.

  The ultraviolet curable liquid crystal contains a compound such as acrylate or methacrylate, and if the liquid crystal phase expression temperature is high, it is difficult to handle because it easily causes thermal polymerization. Therefore, a material having a liquid crystal phase near room temperature may be used.

  By stirring while heating above the NI transition temperature of the liquid crystal composition 112, the nematic liquid crystal to which the chiral material is added and the ultraviolet curable liquid crystal are easily mixed. In addition, adding ultrasonic waves is also effective for mixing. The liquid crystal composition 112 is injected into the panel by utilizing capillary action while heating the liquid crystal composition 112 to a temperature higher than the NI transition temperature. Alternatively, a vacuum injection method or a liquid crystal dropping method may be used.

  Next, while applying a DC voltage between the electrodes so that the long axes of the liquid crystal molecules are aligned perpendicularly to the substrate, UV polymerization is performed to irradiate ultraviolet light to perform photopolymerization and curing of the ultraviolet curable liquid crystal.

  Through the above steps, a liquid crystal electro-optical device composed of a mixture of a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal can be manufactured, and the response when the liquid crystal is driven in the TN mode can be accelerated. .

  A liquid crystal electro-optical device composed of a mixture of nematic liquid crystal TL 215 having a refractive index of 1.7243 and Δn of 0.204 to which a chiral material is added and an ultraviolet curable liquid crystal will be described with reference to FIG. .

  As shown in FIG. 1A, a transparent conductive film 103 was formed on a glass substrate 101 or 102 by a sputtering method with a thickness of 1000 mm. In this embodiment, ITO (Indium-Tin-Oxide) is used as the material of the transparent conductive film 103. The resist resin 104 was applied and calcined, then exposed using an electrode mask, and the resist resin was developed with a developer. Next, as shown in FIG. 1B, the non-covered portion of the transparent conductive film 103 was etched by a wet etching method. After the etching, as shown in FIG. 1C, the resist resin 104 was removed with a stripping solution. After removing the resist resin 104, the transparent conductive film 103 was baked at 250 ° C. for 1 hour to obtain substrates 110 and 111 having electrodes.

  Next, the substrates 110 and 111 having electrodes were washed, polyimide resin 105 (SE7792 manufactured by Nissan Chemical Industries, Ltd.) was printed to a thickness of 400 to 500 mm by offset printing, and firing was performed at 200 ° C. for 90 minutes. After the polyimide resin 105 was baked, the polyimide resin 105 was subjected to an orientation treatment by a rubbing method and washed.

  Next, a pattern was formed on the outside of the electrode using a dispenser with a thermosetting sealing material 106 in which 1.5 wt% of a 2.2 μm gap holding material was mixed on the substrate 110 having the electrode. On the substrate 111 having the other electrode, 20 g of a 2 μm spacer was mixed with 50 g of isopropyl alcohol, and an aqueous solution subjected to ultrasonic waves for 30 minutes was wet-sprayed using a spinner.

Next, an ultraviolet curable sealing material (not shown) for preventing the substrate from being displaced at the time of pressing is dropped on the diagonal of the substrate 111 having the electrodes on which the spacers are dispersed, and a thermosetting seal is applied. Bonding was performed so that the rubbing direction was shifted by 90 ° from the substrate 110 having the electrode on which the pattern was formed with the material 106. Next, pressing was performed at a pressure of 1.0 kgf / cm ² for 15 minutes, and ultraviolet light was irradiated for 1 minute to cure the ultraviolet curable sealing material. After pressing, heat pressing was performed at a pressure of 1.0 kgf / cm ² with a liquid crystal panel seal firing jig, and the bonded substrate was cut into a panel size using a scriber. As a result of measuring the cell gap after hot pressing, the cell gap was 2.0 to 2.5 μm.

  For production of the liquid crystal composition 112, nematic liquid crystal TL215 (made by Merck) to which a chiral material was added and ultraviolet curable liquid crystal were used. In this example, an ultraviolet curable liquid crystal composed of an acrylate compound having a refractive index of 1.655 and Δn of 0.142 was used. An ultraviolet curable liquid crystal is mixed with a nematic liquid crystal to which a chiral material is added at a ratio of 2.5, 5.0, 7.5, and 10 wt% so that the liquid crystal material is in an isotropic phase (liquid) state. The liquid crystal composition 112 was obtained by stirring for 1 hour while heating at ° C.

While the panel was heated on a hot plate at 100 ° C., the liquid crystal composition 112 was injected using a capillary phenomenon. After the injection, ultraviolet light was irradiated for 180 seconds at a UV irradiation intensity of about 8 mW / cm ² while applying a DC voltage of 5 V between the electrodes, and lead wires were connected to the panel electrodes with solder.

  The panel into which the liquid crystal composition 112 was injected was sandwiched between polarizing microscopes having a polarizing plate made of crossed Nicols, and the response of the liquid crystal was observed with an oscilloscope in a state where a voltage was applied between the electrodes through lead wires. Between the electrodes, a rectangular wave voltage of 0V-10V and a frequency of 100 mHz was generated by a waveform generator and applied. In contrast to the response of the nematic liquid crystal TL215 to which the chiral material is added, when the addition amount of the UV curable liquid crystal is 5.0 and 7.5 wt%, the change in the response of the liquid crystal when the input voltage is switched from OFF to ON is However, it was confirmed that the response speed of the liquid crystal when the input voltage was switched from ON to OFF was fast, and the average value of the two response speeds was fast, so that the overall response speed was fast. (Figure 2)

  A liquid crystal electro-optical device composed of a mixture of nematic liquid crystal ZLI-4792 having a refractive index of 1.513 and Δn 0.094 and a UV curable liquid crystal to which a chiral material is added will be described with reference to FIG. explain.

  As shown in FIG. 1A, a transparent conductive film 103 was formed on a glass substrate 101 or 102 with a thickness of 1000 mm by a sputtering method. In this example, ITO (Indium-Tin-Oxide) was used as the transparent conductive film material. The resist resin 104 was applied and calcined, then exposed using an electrode mask, and the resist resin was developed with a developer. Next, as shown in FIG. 1B, the non-covered portion of the transparent conductive film 103 was etched by a wet etching method. After etching, the resist resin 104 was removed with a stripping solution as shown in FIG. After removing the resist resin 104, the transparent conductive film 103 was baked at 250 ° C. for 1 hour to obtain substrates 110 and 111 having electrodes.

  Next, the substrates 110 and 111 having electrodes were washed, polyimide resin 105 (SE7792 manufactured by Nissan Chemical Industries, Ltd.) was printed to a thickness of 400 to 500 mm by offset printing, and firing was performed at 200 ° C. for 90 minutes. After firing the polyimide resin 105, the polyimide resin 105 was subjected to an orientation treatment by a rubbing method and washed.

  Next, a pattern was formed on the outside of the electrode using a dispenser with a thermosetting sealing material in which 1.5 wt% of a 2.2 μm gap holding material was mixed with the substrate 110 having the electrode. On the substrate 111 having the other electrode, 20 g of a 2 μm spacer was mixed with 50 g of isopropyl alcohol, and an aqueous solution subjected to ultrasonic waves for 30 minutes was wet-sprayed using a spinner.

Next, an ultraviolet curable sealing material (not shown) for preventing the substrate from being displaced at the time of pressing is dropped on the diagonal of the substrate 111 having the electrodes on which the spacers are dispersed, and a thermosetting seal is applied. Bonding was performed so that the rubbing direction was shifted by 90 ° from the substrate 110 having the electrode on which the pattern was formed with the material 106. Next, pressing was performed at a pressure of 1.0 kgf / cm ² for 15 minutes, and ultraviolet light was irradiated for 1 minute to cure the ultraviolet curable sealing material. After pressing, heat pressing was performed at a pressure of 1.0 kgf / cm ² with a liquid crystal panel seal firing jig, and the bonded substrate was cut into a panel size using a scriber. As a result of measuring the cell gap after hot pressing, the cell gap was 2.0 to 2.5 μm.

  For the production of the liquid crystal composition 112, nematic liquid crystal ZLI-4792 (manufactured by Merck) to which a chiral material was added and an ultraviolet curable liquid crystal were used. In this example, an ultraviolet curable liquid crystal composed of an acrylate compound having a refractive index of 1.655 and Δn of 0.142 was used. The nematic liquid crystal to which the chiral material is added is mixed with an ultraviolet curable liquid crystal at a ratio of 2.5, 5, 7.5, and 10 wt% at 100 ° C. so that the liquid crystal material is in an isotropic phase (liquid) state. The liquid crystal composition 112 was obtained by stirring for 1 hour while heating.

While the panel was heated on a hot plate at 100 ° C., the liquid crystal composition 112 was injected using a capillary phenomenon. After the injection, ultraviolet light was irradiated for 180 seconds at a UV irradiation intensity of about 8 mW / cm ² while applying a DC voltage of 5 V between the electrodes, and lead wires were connected to the panel electrodes with solder.

  The panel into which the liquid crystal composition 112 was injected was sandwiched between polarizing microscopes having a polarizing plate made of crossed Nicols, and the response of the liquid crystal was observed with an oscilloscope in a state where a voltage was applied between the electrodes through lead wires. Between the electrodes, a rectangular wave voltage of 0V-10V and a frequency of 100 mHz was generated by a waveform generator and applied. In response to the response of the nematic liquid crystal ZLI-4792 to which the chiral material is added, when the addition amount of the ultraviolet curable liquid crystal is 5.0, 7.5, 10 wt%, the liquid crystal of the liquid crystal when the input voltage is switched from OFF to ON Although the response is slightly delayed, the response of the liquid crystal is faster when the input voltage is switched from ON to OFF, and the average value of the two response speeds is faster, so the overall response speed may be faster. confirmed. (Figure 3)

In this embodiment, a method for manufacturing a TFT provided in a pixel when the present invention is applied to an active matrix display device will be described.

First, as shown in FIG. 4A, a base film 501 is formed over a substrate 500. As the substrate 500, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, or the like can be used. It is also possible to use a substrate made of a plastic such as PET, PES, or PEN, or a flexible synthetic resin such as acrylic.

The base film 501 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the substrate 500 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, an insulating film such as silicon nitride or silicon oxide containing nitrogen that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film is used. In this embodiment, a silicon oxide film containing nitrogen is formed by a plasma CVD method so as to have a thickness of 10 nm to 400 nm (preferably 50 nm to 300 nm).

Note that even though the base film 501 is a single layer of an insulating film such as silicon nitride, silicon oxide containing nitrogen, or silicon nitride containing oxygen, insulation such as silicon oxide, silicon nitride, silicon oxide containing nitrogen, or silicon nitride containing oxygen is used. A plurality of laminated films may be used. In addition, when using a substrate that contains alkali metal or alkaline earth metal, such as a glass substrate, stainless steel substrate, or plastic substrate, it is effective to provide a base film from the viewpoint of preventing impurity diffusion. However, when diffusion of impurities does not cause any problem, such as a quartz substrate, it is not necessarily provided.

  Next, a semiconductor film 502 is formed over the base film 501. The thickness of the semiconductor film 502 is 25 nm to 100 nm (preferably 30 nm to 60 nm). Note that the semiconductor film 502 may be an amorphous semiconductor or a polycrystalline semiconductor. As the semiconductor, not only silicon (Si) but also silicon germanium (SiGe) can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

Next, as shown in FIG. 4B, the semiconductor film 502 is irradiated with a linear laser 499 to be crystallized. In the case of performing laser crystallization, heat treatment for one hour at 500 ° C. may be added to the semiconductor film 502 in order to increase the resistance of the semiconductor film 502 to the laser before laser crystallization.

For laser crystallization, a pulsed laser having an oscillation frequency of 10 MHz or more, preferably 80 MHz or more can be used as a continuous wave laser or a pseudo CW laser.

Specifically, as a continuous wave laser, an Ar laser, a Kr laser, a CO ₂ laser, a YAG laser, a YVO ₄ laser, a YLF laser, a YAlO ₃ laser, a GdVO ₄ laser, a Y ₂ O ₃ laser, a ruby laser, an alexandride A laser, a Ti: sapphire laser, a helium cadmium laser, and the like can be given.

As a pseudo CW laser, an Ar laser, a Kr laser, an excimer laser, a CO ₂ laser, a YAG laser, a YVO ₄ laser, a YLF laser can be used as long as it can oscillate a pulse having an oscillation frequency of 10 MHz or more, preferably 80 MHz or more. A pulsed laser such as a YAlO ₃ laser, a GdVO ₄ laser, a Y ₂ O ₃ laser, a ruby laser, an alexandride laser, a Ti: sapphire laser, a copper vapor laser, or a gold vapor laser can be used.

Such a pulsed laser has an effect equivalent to that of a continuous wave laser as the oscillation frequency is increased.

For example, when a solid-state laser capable of continuous oscillation is used, a crystal having a large grain size can be obtained by irradiating laser light of second to fourth harmonics. Typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of a YAG laser (fundamental wave 1064 nm). For example, laser light emitted from a continuous wave YAG laser is converted into a harmonic by a non-linear optical element, and irradiated to the semiconductor film 502. Energy density may be about 0.01 to 100 MW / cm ² (preferably 0.1~10MW / cm ^2).

Note that laser light irradiation may be performed in an atmosphere containing an inert gas such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold voltage caused by variation in interface state density can be suppressed.

By irradiating the semiconductor film 502 with laser light, the crystalline semiconductor film 504 with higher crystallinity is formed.

Next, as shown in FIG. 4C, the crystalline semiconductor film 504 is patterned, so that island-shaped semiconductor films 507 to 509 are formed. In the island-like semiconductor films 507 to 509, a TFT source region, drain region, channel formation region, and the like are formed in the following steps.

Next, an impurity for threshold control is introduced into the island-shaped semiconductor film. In this embodiment, boron (B) is introduced into the island-like semiconductor film by doping with diborane (B ₂ H ₆ ).

Next, an insulating film 510 is formed so as to cover the island-shaped semiconductor films 507 to 509. For the insulating film 510, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxide containing nitrogen (SiON), or the like can be used. As a film formation method, a plasma CVD method, a sputtering method, or the like can be used.

Next, after a conductive film is formed over the insulating film 510, the conductive film is patterned to form gate electrodes 570 to 572.

The gate electrodes 570 to 572 are formed using a structure in which a single conductive film or two or more conductive films are stacked. In the case where two or more conductive films are stacked, an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al), or the element as a main component The gate electrodes 570 to 572 may be formed by stacking alloy materials or compound materials to be stacked. Alternatively, the gate electrode may be formed using a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus (P).

In this embodiment, the gate electrodes 570 to 572 are formed as follows. First, as the first conductive film 511, for example, a tantalum nitride (TaN) film is formed with a thickness of 10 to 50 nm, for example, 30 nm. Then, as the second conductive film 512, for example, a tungsten (W) film is formed with a thickness of 200 to 400 nm, for example, 370 nm, over the first conductive film 511, and the first conductive film 511 and the second conductive film 512 are formed. Is formed (FIG. 4D).

Next, the second conductive film 512 is etched by anisotropic etching to form upper gate electrodes 560 to 562 (FIG. 5A). Next, the first conductive film 511 is etched by isotropic etching to form lower gate electrodes 563 to 565 (FIG. 5B). Thus, gate electrodes 570 to 572 are formed.

The gate electrodes 570 to 572 may be formed as part of the gate wiring, or another gate wiring may be formed and the gate electrodes 570 to 572 may be connected to the gate wiring.

Then, an impurity imparting one conductivity (n-type or p-type conductivity) to each of the island-shaped semiconductor films 507 to 509 using the gate electrodes 570 to 572 or a resist film formed and patterned as a mask. To form a source region, a drain region, a low-concentration impurity region, and the like.

First, phosphorous (P) is introduced into the island-shaped semiconductor film using phosphine (PH ₃ ) with an acceleration voltage of 60 to 120 keV and a dose of 1 × 10 ¹³ to 1 × 10 ¹⁵ cm ⁻² . When this impurity is introduced, channel formation regions 522 and 527 of n-channel TFTs 550 and 552 are formed.

In order to fabricate the p-channel TFT 551, diborane (B ₂ H ₆ ) is applied with an applied voltage of 60 to 100 keV, for example, 80 keV, and a dose amount of 1 × 10 ^{13 to} 5 × 10 ¹⁵ cm ⁻² , for example, 3 × 10 ¹⁵ cm ^{−. Under} the condition ² , boron (B) is introduced into the island-like semiconductor film. Accordingly, a source region or a drain region 523 of the p-channel TFT and a channel formation region 524 are formed when this impurity is introduced (FIG. 5C).

Next, the insulating film 510 is patterned to form gate insulating films 580 to 582.

After the gate insulating films 580 to 582 are formed, phosphine (PH ₃ ) is used in the n-channel TFT and the island-like semiconductor films 550 and 552, and the applied voltage is 40 to 80 keV, for example 50 keV, and the dose amount is 1.0 × 10. Phosphorus (P) is introduced at ^{15 to} 2.5 × 10 ¹⁶ cm ⁻² , for example, 3.0 × 10 ¹⁵ cm ⁻² . Thus, low-concentration impurity regions 521 and 526 and source or drain regions 520 and 525 of the n-channel TFT are formed (FIG. 6A).

In this embodiment, each of the source or drain regions 520 and 525 of the n-channel TFTs 550 and 552 contains phosphorus (P) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ^−3. Become. Each of the low-concentration impurity regions 521 and 526 of the n-channel TFTs 550 and 552 contains phosphorus (P) at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ . Further, the source or drain region 523 of the p-channel TFT 551 contains boron (B) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ .

Next, a first interlayer insulating film 530 is formed to cover the island-shaped semiconductor films 507 to 509 and the gate electrodes 570 to 572 (FIG. 6B).

As the first interlayer insulating film 530, an insulating film containing silicon, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxide film containing nitrogen (SiON), using plasma CVD or sputtering, Or it forms with the laminated film. Needless to say, the first interlayer insulating film 530 is not limited to a silicon oxide film or silicon nitride film containing nitrogen, or a laminated film thereof, and other insulating films containing silicon may be used as a single layer or a laminated structure. .

In this embodiment, after introducing impurities, a silicon oxide film containing nitrogen (SiON film) is formed to a thickness of 50 nm by a plasma CVD method, and the impurities are activated by a laser irradiation method. Alternatively, after forming a silicon oxide film containing nitrogen, the impurity may be activated by heating at 550 ° C. for 4 hours in a nitrogen atmosphere.

Next, a silicon nitride film (SiN film) is formed with a thickness of 50 nm by plasma CVD, and a silicon oxide film (SiON film) containing nitrogen is further formed with a thickness of 600 nm. The stacked film of the silicon oxide film containing nitrogen, the silicon nitride film, and the silicon oxide film containing nitrogen is the first interlayer insulating film 530.

Next, the whole is heated at 410 ° C. for 1 hour, and hydrogen is released by releasing hydrogen from the silicon nitride film.

Next, a second interlayer insulating film 531 that functions as a planarization film is formed so as to cover the first interlayer insulating film 530.

As the second interlayer insulating film 531, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), a bond of silicon (Si) and oxygen (O) (Si- A material having a skeletal structure composed of (O—Si bond) and containing at least hydrogen as a substituent, or having at least one of fluorine, alkyl group, and aromatic hydrocarbon as a substituent, a so-called siloxane, and a laminate thereof A structure can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

  In this embodiment, siloxane is formed as the second interlayer insulating film 531 by a spin coating method.

  The first interlayer insulating film 530 and the second interlayer insulating film 531 are etched to form contact holes reaching the island-shaped semiconductor films 507 to 509 in the first interlayer insulating film 530 and the second interlayer insulating film 531.

Note that a third interlayer insulating film may be formed on the second interlayer insulating film 531, and contact holes may be formed in the first to third interlayer insulating films. As the third interlayer insulating film, a film that hardly transmits moisture, oxygen, or the like as compared with other insulating films is used. Typically, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by sputtering or CVD, carbon A thin film (for example, a DLC film or a CN film) whose main component is can be used.

A third conductive film is formed over the second interlayer insulating film 531 through a contact hole, and the first conductive film is patterned to form electrodes or wirings 540 to 544.

In this embodiment, a metal film is used for the third conductive film. As the metal film, a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film using these elements may be used. In this embodiment, a titanium film (Ti), a titanium nitride film (TiN), a silicon-aluminum alloy film (Al-Si), and a titanium film (Ti) are laminated to 60 nm, 40 nm, 300 nm, and 100 nm, respectively. Electrodes or wirings 540 to 544 are formed by patterning and etching into a shape.

Alternatively, the electrodes or wirings 540 to 544 may be formed of an aluminum alloy film containing at least one element selected from nickel, cobalt, and iron, and carbon. Such an aluminum alloy film can prevent mutual diffusion of silicon and aluminum even when it comes into contact with silicon. In addition, since such an aluminum alloy film does not cause an oxidation-reduction reaction even when it comes into contact with a transparent conductive film, for example, an ITO (Indium Tin Oxide) film, both can be brought into direct contact with each other. Furthermore, such an aluminum alloy film is useful as a wiring material because of its low specific resistance and excellent heat resistance.

Each of the electrodes or wirings 540 to 544 may be formed by integrating the electrode and the wiring, or the electrode and the wiring may be separately formed and connected.

Through the above series of steps, a CMOS circuit 553 including the n-channel TFT 550 and the p-channel TFT 551 and a semiconductor device including the n-channel TFT 552 can be formed (FIG. 6C). Needless to say, the method for manufacturing the semiconductor device is not limited to the above-described manufacturing process.

In this embodiment, an example in which a liquid crystal display device (Liquid Crystal Display (LCD)) is manufactured using the present invention will be described.

A manufacturing method of a display device described in this embodiment is a method of manufacturing a pixel portion including a pixel TFT and a TFT of a driver circuit portion provided around the pixel portion at the same time. However, in order to simplify the explanation, a CMOS circuit which is a basic unit with respect to the drive circuit is illustrated.

First, based on Example 3, the process up to formation of electrodes or wirings 540 to 544 in FIG. In addition, the same thing as the said Example is represented with the same code | symbol.

Next, a third interlayer insulating film 610 is formed over the second interlayer insulating film 531 and the electrodes or wirings 540 to 544. Note that the third interlayer insulating film 610 can be formed using a material similar to that of the second interlayer insulating film 531.

Next, a resist mask is formed using a photomask, and a part of the third interlayer insulating film 610 is removed by dry etching to form an opening (a contact hole is formed). In this contact hole formation, carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ), and helium (He) were used as etching gases, and CF ₄ , O ₂ , and He were used at flow rates of 50 sccm, 50 sccm, and 30 sccm, respectively. . Note that the bottom of the contact hole reaches the electrode or wiring 544.

Next, after removing the resist mask, a second conductive film is formed over the entire surface. Next, patterning of the second conductive film is performed using a photomask, so that the pixel electrode 623 electrically connected to the electrode or the wiring 544 is formed (FIG. 7). In this embodiment, since a reflective liquid crystal display panel is manufactured, light reflection of Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc. is performed by the pixel electrode 623 sputtering method. It may be formed using a metal material having properties.

When a transmissive liquid crystal display panel is manufactured, a transparent conductive film such as indium tin oxide (ITO), indium tin oxide containing silicon oxide, zinc oxide (ZnO), or tin oxide (SnO ₂ ) is used. A pixel electrode 623 is formed.

FIG. 9 shows an enlarged top view of a part of the pixel portion 650 including the pixel TFT. Further, FIG. 9 shows a state in which the pixel electrode is being formed, and shows a state in which the pixel electrode is formed in the left pixel, but the pixel electrode is not formed in the right pixel. In FIG. 9, a diagram cut along a solid line A-A ′ corresponds to the cross section of the pixel portion in FIG. 7, and the same reference numerals are used for portions corresponding to FIG. 7.

  As shown in FIG. 9, the gate electrode 572 is connected to the gate wiring 630. The electrode 543 is integrally formed with the source wiring.

  In addition, a capacitor wiring 631 is provided, and the storage capacitor is formed of the pixel electrode 623 and the capacitor wiring 631 overlapping the pixel electrode, using the first interlayer insulating film 530 as a dielectric.

  In this embodiment, in the region where the pixel electrode 623 and the capacitor wiring 631 overlap, the second interlayer insulating film 531 and the third interlayer insulating film 610 are etched, and the storage capacitor has the pixel electrode 623, the first interlayer insulating film 530, and A capacitor wiring 631 is formed. However, if the second interlayer insulating film 531 and the third interlayer insulating film 610 can also be used as a dielectric, the second interlayer insulating film 531 and the third interlayer insulating film 610 need not be etched. In that case, the first interlayer insulating film 530, the second interlayer insulating film 531 and the third interlayer insulating film 610 function as a dielectric. Alternatively, only the third interlayer insulating film 610 may be etched, and the first interlayer insulating film 530 and the second interlayer insulating film 531 may be used as a dielectric.

  Through the above process, a TFT substrate of a liquid crystal display device in which the top gate pixel TFT 552, the CMOS circuit 553 including the top gate TFTs 550 and 551, and the pixel electrode 623 are formed on the substrate 500 is completed. In this embodiment, a top gate type TFT is formed, but a bottom gate type TFT can be used as appropriate.

  Next, an alignment film 624 a is formed so as to cover the pixel electrode 623. Note that the alignment film 624a may be formed using a droplet discharge method, a screen printing method, or an offset printing method. Thereafter, a rubbing process is performed on the surface of the alignment film 624a.

  The counter substrate 625 is provided with a color filter composed of a colored layer 626a, a light shielding layer (black matrix) 626b, and an overcoat layer 627, a counter electrode 628 composed of a transparent electrode or a reflective electrode, and an alignment film thereon. 624b is formed (FIG. 8). Then, a sealing material 600 having a closed pattern is formed so as to surround a region overlapping with the pixel portion 650 including the pixel TFT by a droplet discharge method (FIG. 10A). Here, an example in which a sealing material 600 having a closed pattern is drawn in order to drop liquid crystal is shown. However, a dip type (in which liquid crystal is injected by using a capillary phenomenon after providing a sealing pattern having an opening and bonding the substrate 500 together) A pumping type) may be used.

  Next, the liquid crystal composition 629 is dropped under reduced pressure so that bubbles do not enter (FIG. 10B), and both the substrates 500 and 625 are attached (FIG. 10C). The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern. What is necessary is just to use what was shown to the said embodiment and the said Example as a liquid-crystal composition. As an alignment mode of the liquid crystal composition 629, a TN mode in which the alignment of liquid crystal molecules is twisted by 90 ° from incident light to outgoing light is used. And it bonds so that the rubbing direction of a board | substrate may orthogonally cross.

  Note that the distance between the pair of substrates may be maintained by scattering spherical spacers, forming columnar spacers made of resin, or including a filler in the sealant 600. The columnar spacer is an organic resin material mainly containing at least one of acrylic, polyimide, polyimide amide, and epoxy, or any one material of silicon oxide, silicon nitride, and silicon oxide containing nitrogen, or a laminate thereof. It is an inorganic material made of a film.

  Next, the substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the dividing step can be omitted by attaching a counter substrate that has been cut in advance (FIG. 10D).

  Then, an FPC (Flexible Printed Circuit) is attached through an anisotropic conductor layer using a known technique. The liquid crystal display device is completed through the above steps. If necessary, an optical film is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the TFT substrate and the counter substrate.

  FIG. 15A shows a top view of the liquid crystal display device obtained through the above steps, and FIG. 15B shows an example of a top view of another liquid crystal display device.

  In FIG. 15A, 500 is a TFT substrate, 625 is a counter substrate, 650 is a pixel portion, 600 is a sealing material, and 801 is an FPC. Note that the liquid crystal composition is discharged by a droplet discharge method, and the pair of substrates 500 and 625 is bonded to each other with the sealant 600 under reduced pressure.

  In FIG. 15B, 500 is a TFT substrate, 625 is a counter substrate, 802 is a source signal line driver circuit, 803 is a gate signal line driver circuit, 650 is a pixel portion, 600a is a first sealant, and 801 is an FPC. . Note that the liquid crystal composition is discharged by a droplet discharge method, and the pair of substrates 500 and 625 are bonded to each other with the first sealant 600a and the second sealant 600b. Since the driving circuit portions 802 and 803 do not require liquid crystal, only the pixel portion 650 holds the liquid crystal, and the second sealant 600b is provided to reinforce the entire panel.

  As described above, in this example, a liquid crystal display device with a high response speed can be manufactured using the liquid crystal composition of the present invention and a TFT having a crystalline semiconductor film. The liquid crystal display device manufactured in this embodiment can be used as a display portion of various electronic devices.

  In this embodiment, the top gate type TFT is used as the TFT. However, the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. . Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  Further, this embodiment can be freely combined with any description of the above embodiment modes and embodiments, if necessary.

  In this embodiment, an example in which a droplet discharge method is used for liquid crystal dropping is described. In this embodiment, an example of manufacturing four panels using a large area substrate 1110 is shown.

  FIG. 11A is a cross-sectional view in the middle of liquid crystal layer formation by a dispenser (or ink jet), and a liquid crystal composition 1114 is applied to a droplet discharge device 1116 so as to cover a pixel portion 1111 surrounded by a sealant 1112. Nozzle 1118 is discharged, jetted, or dropped. The droplet discharge device 1116 is moved in the direction of the arrow in FIG. Although the example in which the nozzle 1118 is moved is shown here, the liquid crystal layer may be formed by fixing the nozzle and moving the substrate.

  FIG. 11B shows a perspective view. A state in which the liquid crystal composition 1114 is selectively ejected, jetted, or dropped only in a region surrounded by the sealant 1112 and the dropping surface 1115 moves in accordance with the nozzle scanning direction 1113 is shown.

  11C and 11D are enlarged cross-sectional views of a portion 1119 surrounded by a dotted line in FIG. When the viscosity of the liquid crystal composition is high, the liquid crystal composition is continuously discharged and attached while being connected as shown in FIG. On the other hand, when the viscosity of the liquid crystal composition is low, the liquid crystal composition is discharged intermittently, and droplets are dropped as shown in FIG.

  Note that in FIG. 11C, reference numeral 1120 denotes a top gate TFT, and 1121 denotes a pixel electrode. The pixel portion 1111 includes pixel electrodes arranged in a matrix, switching elements connected to the pixel electrodes, here, top gate TFTs, and storage capacitors.

  Although a top gate TFT is used in this embodiment, a bottom gate TFT may be used.

  Here, the flow of panel fabrication will be described below with reference to FIGS.

  First, a first substrate 1110 having a pixel portion 1111 formed on an insulating surface is prepared. The first substrate 1110 is previously subjected to formation of an alignment film, rubbing treatment, spherical spacer dispersion, columnar spacer formation, or color filter formation. Next, as illustrated in FIG. 12A, a sealant 1112 is formed at a predetermined position (a pattern surrounding the pixel portion 1111) on the first substrate 1110 with a dispenser device or an inkjet device under an inert gas atmosphere or under reduced pressure. . The translucent sealing material 1112 includes a filler (diameter 6 μm to 24 μm) and a viscosity of 40 to 400 Pa · s. It is preferable to select a material that does not dissolve in the liquid crystal that comes into contact later. As the sealing material 1112, an acrylic photo-curing resin or an acrylic thermosetting resin may be used. In addition, since the sealing pattern is simple, the sealing material 1112 can be formed by a printing method.

  Next, a liquid crystal composition 1114 is dropped by an inkjet method into a region surrounded by the sealant 1112 (FIG. 12B). As the liquid crystal composition 1114, the liquid crystal composition shown in the above embodiment may be used. In addition, since the viscosity of the liquid crystal composition can be set by adjusting the temperature, it is suitable for the ink jet method. A necessary amount of the liquid crystal composition 1114 can be held in a region surrounded by the sealant 1112 without waste by an inkjet method.

  Next, the first substrate 1110 provided with the pixel portion 1111 and the second substrate 1031 provided with the counter electrode and the alignment film are bonded together under reduced pressure so that bubbles do not enter. Here, the sealing material 1112 is cured by performing ultraviolet irradiation and heat treatment at the same time as bonding. In addition to ultraviolet irradiation, heat treatment may be performed.

  FIG. 14 shows an example of a bonding apparatus capable of performing ultraviolet irradiation or heat treatment at the time of bonding or after bonding.

  14A and 14B, reference numeral 1041 denotes a first substrate support base, 1042 denotes a second substrate support base, 1044 denotes a translucent window, 1048 denotes a lower surface plate, and 1049 denotes an ultraviolet light source. It is. 14A to 14B, FIGS. 11A to 11D, FIGS. 12A to 12B, and FIGS. 13A to 13B. The same reference numerals are used for portions corresponding to.

  The lower surface plate 1048 has a built-in heater, and cures the sealing material 1112. The second substrate support 1042 is provided with a light-transmitting window 1044 so that ultraviolet light from the light source 1049 can pass therethrough. Although not shown here, the substrate is aligned through the window 1044. In addition, the second substrate 1031 to be the counter substrate is cut into a desired size in advance, and is fixed to the second substrate support 1042 with a vacuum chuck or the like. FIG. 14A shows a state before bonding.

  At the time of bonding, after the first substrate support base 1041 and the second substrate support base 1042 are lowered, the first substrate 1110 and the second substrate 1031 are bonded together by applying pressure and cured by irradiating ultraviolet light as it is. Let The state after bonding is shown in FIG.

  Next, the first substrate 1110 is cut using a cutting device such as a scriber device, a breaker device, or a roll cutter (FIG. 13B). Thus, four panels can be manufactured from one substrate. Then, the FPC is pasted using a known technique.

  Note that a glass substrate or a plastic substrate can be used as the first substrate 1110 and the second substrate 1031.

  Further, this embodiment can be freely combined with any description of the above embodiment modes and embodiments, if necessary.

  As an electronic device to which the present invention is applied, a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device (car audio component, etc.), a computer, a game device, a portable information terminal (mobile computer, cellular phone, portable type) A game machine or an electronic book), an image playback device provided with a recording medium (specifically, a device provided with a display capable of playing back a recording medium such as a Digital Versatile Disc (DVD) and displaying the image). It is done. Specific examples of these electronic devices are shown in FIGS. 16, 17, 18A to 18B, 19A to 19B, 20, 21A to 21 (). E).

  FIG. 16 shows a liquid crystal module in which a display panel 5001 and a circuit board 5011 are combined. A circuit board 5011 is provided with a control circuit 5012, a signal dividing circuit 5013, and the like, and is electrically connected to the display panel 5001 through a connection wiring 5014.

  The display panel 5001 includes a pixel portion 5002 provided with a plurality of pixels, a scanning line driver circuit 5003, and a signal line driver circuit 5004 for supplying a video signal to the selected pixel. Note that in the case of manufacturing a liquid crystal module, the display panel 5001 may be manufactured by using the above embodiment modes and examples. In addition, a control driver circuit portion such as the scan line driver circuit 5003 and the signal line driver circuit 5004 can be manufactured using the TFTs formed in the above embodiments.

  A liquid crystal television receiver can be completed with the liquid crystal module shown in FIG. FIG. 17 is a block diagram showing a main configuration of the liquid crystal television receiver. A tuner 5101 receives a video signal and an audio signal. The video signal includes a video signal amplifying circuit 5102, a video signal processing circuit 5103 that converts a signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and the video signal as input specifications of the driver IC. Processing is performed by a control circuit 5012 for conversion. The control circuit 5012 outputs a signal to each of the scanning line side and the signal line side. In the case of digital driving, a signal dividing circuit 5013 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 5101, the audio signal is sent to the audio signal amplifier circuit 5105, and the output is supplied to the speaker 5107 through the audio signal processing circuit 5106. The control circuit 5108 receives control information on the receiving station (reception frequency) and volume from the input unit 5109 and sends a signal to the tuner 5101 and the audio signal processing circuit 5106.

  As shown in FIG. 18A, a television receiver can be completed by incorporating a liquid crystal module into a housing 5201. A display screen 5202 is formed by the liquid crystal module. In addition, a speaker 5203, an operation switch 5204, and the like are provided as appropriate.

  FIG. 18B shows a television receiver that can carry only a display wirelessly. A housing and a signal receiver are incorporated in the housing 5212, and the display portion 5213 and the speaker portion 5217 are driven by the battery. The battery can be repeatedly charged by a charger 5210. The charger 5210 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 5212 is controlled by operation keys 5216. The device illustrated in FIG. 18B can also be referred to as a video / audio two-way communication device because a signal can be sent from the housing 5212 to the charger 5210 by operating the operation key 5216. In addition, by operating the operation key 5216, a signal is transmitted from the housing 5212 to the charger 5210, and further, a signal that can be transmitted by the charger 5210 is received by another electronic device, thereby controlling communication of the other electronic device. It can be said to be a general-purpose remote control device. The present invention can be applied to the display portion 5213, a control circuit portion, and the like.

  By using the television receiver shown in FIGS. 16, 17, 18A to 18B according to the present invention, this television receiver having a high response speed can be manufactured.

  Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

  FIG. 19A shows a module in which a display panel 5301 and a printed wiring board 5302 are combined. The display panel 5301 includes a pixel portion 5303 provided with a plurality of pixels, a first scan line driver circuit 5304, a second scan line driver circuit 5305, and a signal line driver circuit that supplies a video signal to the selected pixel. 5306 is provided.

  The printed wiring board 5302 is provided with a controller 5307, a central processing unit (CPU) 5308, a memory 5309, a power supply circuit 5310, an audio processing circuit 5311, a transmission / reception circuit 5312, and the like. The printed wiring board 5302 and the display panel 5301 are connected by a flexible wiring board (FPC) 5313. The printed wiring board 5302 may be provided with a capacitor, a buffer circuit, or the like so that noise is added to the power supply voltage or the signal or the rise of the signal is not slowed. The controller 5307, the audio processing circuit 5311, the memory 5309, the CPU 5308, the power supply circuit 5310, and the like can be mounted on the display panel 5301 using a COG (Chip On Glass) method. The scale of the printed wiring board 5302 can be reduced by the COG method.

  Various control signals are input and output through an interface (I / F) unit 5314 provided in the printed wiring board 5302. An antenna port 5315 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 5302.

  FIG. 19B shows a block diagram of the module shown in FIG. This module includes a VRAM 5316, a DRAM 5317, a flash memory 5318, and the like as the memory 5309. The VRAM 5316 stores image data to be displayed on the panel, the DRAM 5317 stores image data or audio data, and the flash memory stores various programs.

  The power supply circuit 5310 supplies power for operating the display panel 5301, the controller 5307, the CPU 5308, the sound processing circuit 5311, the memory 5309, and the transmission / reception circuit 5312. Depending on the specifications of the panel, the power supply circuit 5310 may be provided with a current source.

  The CPU 5308 includes a control signal generation circuit 5320, a decoder 5321, a register 5322, an arithmetic circuit 5323, a RAM 5324, an interface 5366 for the CPU 5308, and the like. Various signals input to the CPU 5308 through the interface 5366 are temporarily held in the register 5322 and then input to the arithmetic circuit 5323, the decoder 5321, and the like. The arithmetic circuit 5323 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the signal input to the decoder 5321 is decoded and input to the control signal generation circuit 5320. The control signal generation circuit 5320 generates a signal including various instructions based on the input signal, and a location designated by the arithmetic circuit 5323, specifically, a memory 5309, a transmission / reception circuit 5312, an audio processing circuit 5311, a controller 5307, and the like. Send to.

  The memory 5309, the transmission / reception circuit 5312, the sound processing circuit 5311, and the controller 5307 operate according to the received commands. The operation will be briefly described below.

  A signal input from the input unit 5325 is sent to the CPU 5308 mounted on the printed wiring board 5302 via the I / F unit 5314. The control signal generation circuit 5320 converts the image data stored in the VRAM 5316 into a predetermined format according to a signal sent from the input unit 5325 such as a pointing device or a keyboard, and sends the image data to the controller 5307.

  The controller 5307 performs data processing on a signal including image data sent from the CPU 5308 in accordance with the specifications of the panel, and supplies the processed signal to the display panel 5301. Further, the controller 5307 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R based on the power supply voltage input from the power supply circuit 5310 and various signals input from the CPU 5308. Generated and supplied to the display panel 5301.

  In the transmission / reception circuit 5312, signals transmitted / received as radio waves in the antenna 5328 are processed. Specifically, high-frequency signals such as an isolator, a band-pass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, and a balun. Includes circuitry. A signal including audio information among signals transmitted and received in the transmission / reception circuit 5312 is sent to the audio processing circuit 5311 in accordance with a command from the CPU 5308.

  A signal including audio information sent in accordance with a command from the CPU 5308 is demodulated into an audio signal by the audio processing circuit 5311 and sent to the speaker 5327. An audio signal sent from the microphone 5326 is modulated in the audio processing circuit 5311 and sent to the transmission / reception circuit 5312 in accordance with a command from the CPU 5308.

  The controller 5307, the CPU 5308, the power supply circuit 5310, the sound processing circuit 5311, and the memory 5309 can be mounted as a package of this embodiment. This embodiment can be applied to any circuit other than a high-frequency circuit such as an isolator, a band pass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, and a balun.

  20 illustrates one mode of a mobile phone including the module illustrated in FIGS. 19A to 19B. The display panel 5301 is incorporated in a housing 5330 so as to be detachable. The shape and size of the housing 5330 can be changed as appropriate in accordance with the size of the display panel 5301. The housing 5330 to which the display panel 5301 is fixed is fitted to the printed board 5331 and assembled as a module.

  The display panel 5301 is connected to the printed board 5331 through the FPC 5313. A signal processing circuit 5335 including a speaker 5332, a microphone 5333, a transmission / reception circuit 5334, a CPU, a controller, and the like is formed over the printed board 5331. Such a module is combined with the input means 5336, the battery 5337, and the antenna 5340 and stored in the housing 5339. The pixel portion of the display panel 5301 is arranged so that it can be seen from an opening window formed in the housing 5339.

The mobile phone according to the present embodiment can be transformed into various modes according to the function and application. For example, the above-described effects can be obtained even when a plurality of display panels are provided, or the housing is divided into a plurality of cases and is opened and closed by a hinge.
it can.

  By using the present invention for the mobile phone shown in FIGS. 19A to 19B and FIG. 20, a mobile phone with high-speed response can be manufactured.

  FIG. 21A illustrates a liquid crystal display which includes a housing 6001, a support base 6002, a display portion 6003, and the like. The present invention can be applied to the display portion 6003 by using the structure of the liquid crystal module shown in FIG. 16 and the display panel shown in FIG. Further, the present invention can also be used for a control circuit unit or the like.

  By using the present invention, a display with a high response speed can be manufactured.

  FIG. 21B illustrates a computer, which includes a main body 6101, a housing 6102, a display portion 6103, a keyboard 6104, an external connection port 6105, a pointing mouse 6106, and the like. The present invention can be applied to the display portion 6103 by using the liquid crystal module shown in FIG. 16 and the structure of the display panel shown in FIG. Further, the present invention can also be used for a control circuit unit or the like.

  By using the present invention, the computer having a high response speed can be manufactured.

  FIG. 21C illustrates a portable computer, which includes a main body 6201, a display portion 6202, a switch 6203, operation keys 6204, an infrared port 6205, and the like. The present invention can be applied to the display portion 6202 by using the liquid crystal module shown in FIG. 16 and the structure of the display panel shown in FIG. Further, the present invention can also be used for a control circuit unit or the like.

  By using the present invention, the computer having a high response speed can be manufactured.

  FIG. 21D illustrates a portable game machine including a housing 6301, a display portion 6302, speaker portions 6303, operation keys 6304, a recording medium insertion portion 6305, and the like. The present invention can be applied to the display portion 6302 using the structure of the liquid crystal module shown in FIG. 16 and the display panel shown in FIG.

    By using the present invention, this game machine having a high response speed can be manufactured.

  FIG. 21E illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium. A reading unit 6405, operation keys 6406, a speaker unit 6407, and the like are included. The display portion A 6403 mainly displays image information, and the display portion B 6404 mainly displays character information. The present invention can be applied to the display portion A 6403, the display portion B 6404, the control circuit portion, and the like by using the structure of the liquid crystal module shown in FIG. 16 and the display panel shown in FIG. Further, the present invention can also be used for a control circuit unit or the like. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

  By using the present invention, it is possible to manufacture the image reproducing device having a high response speed.

  Display devices used in these electronic devices can use not only a glass substrate but also a heat-resistant plastic substrate depending on the size, strength, or purpose of use. As a result, the weight can be further reduced.

  It should be noted that the examples shown in the present embodiment are only examples and are not limited to these applications.

  This embodiment can be implemented by being freely combined with any description of the above embodiment modes and embodiments.

Sectional drawing explaining the manufacturing process of the liquid-crystal electro-optical apparatus of this invention. The response time characteristic with respect to the addition amount of the ultraviolet curable liquid crystal of the liquid crystal electro-optical device in Example 1 of the present invention is shown. The response time characteristic with respect to the addition amount of the ultraviolet curable liquid crystal of the liquid crystal electro-optical device in Example 2 of the present invention is shown. 10A and 10B illustrate a manufacturing process of a semiconductor device. 10A and 10B illustrate a manufacturing process of a semiconductor device. 10A and 10B illustrate a manufacturing process of a semiconductor device. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. FIG. 5 shows one pixel of a liquid crystal display device of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention using a liquid crystal dropping method. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention using a liquid crystal dropping method. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention using a liquid crystal dropping method. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention using a liquid crystal dropping method. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Substrate 102 Substrate 103 Transparent conductive film 104 Resist resin 105 Polyimide resin 106 Sealing material 110 Substrate having electrode 111 Substrate having electrode 112 Liquid crystal composition 499 Linear laser 500 Substrate 501 Base film 502 Semiconductor film 504 Crystalline semiconductor film 507 Island Island-like semiconductor film 508 island-like semiconductor film 509 island-like semiconductor film 510 insulating film 511 conductive film 512 conductive film 520 drain region 521 low-concentration impurity region 522 channel formation region 523 drain region 524 channel formation region 525 drain region 526 low-concentration impurity region 527 Channel formation region 530 Interlayer insulating film 531 Interlayer insulating film 540 Wiring 541 Wiring 542 Wiring 543 Wiring 544 Wiring 550 n-channel TFT
551 p-channel TFT
552 n-channel TFT
553 CMOS circuit 560 Upper gate electrode 561 Upper gate electrode 562 Upper gate electrode 563 Lower gate electrode 564 Lower gate electrode 565 Lower gate electrode 570 Gate electrode 571 Gate electrode 572 Gate electrode 580 Gate insulating film 581 Gate insulating film 582 Gate insulating film 600 Seal Material 600a Sealing material 600b Sealing material 610 Interlayer insulating film 623 Pixel electrode 624a Alignment film 624b Alignment film 625 Counter substrate 626a Colored layer 626b Light shielding layer 627 Overcoat layer 628 Counter electrode 629 Liquid crystal composition 630 Gate wiring 631 Capacitor wiring 650 Pixel portion 801 FPC
802 Drive circuit portion 803 Gate signal line drive circuit 1031 Substrate 1041 Substrate support base 1042 Substrate support base 1044 Window 1048 Lower surface plate 1049 Light source 1110 Substrate 1111 Pixel portion 1112 Sealing material 1113 Nozzle scanning direction 1114 Liquid crystal composition 1115 Dropping surface 1116 Liquid Droplet discharge device 1118 Nozzle 1119 Portion surrounded by dotted line 1120 Top gate type TFT
1121 Pixel electrode 5001 Display panel 5002 Pixel unit 5003 Scan line driver circuit 5004 Signal line driver circuit 5011 Circuit board 5012 Control circuit 5013 Signal dividing circuit 5014 Connection wiring 5101 Tuner 5102 Video signal amplifier circuit 5103 Video signal processing circuit 5105 Audio signal amplifier circuit 5106 Audio signal processing circuit 5107 Speaker 5108 Control circuit 5109 Input unit 5201 Case 5202 Display screen 5203 Speaker 5204 Operation switch 5210 Battery charger 5212 Case 5213 Display unit 5216 Operation key 5217 Speaker unit 5301 Display panel 5302 Printed wiring board 5303 Pixel unit 5304 Scanning Line drive circuit 5305 Scanning line drive circuit 5306 Signal line drive circuit 5307 Controller 5308 CPU
5309 Memory 5310 Power supply circuit 5311 Audio processing circuit 5312 Transmission / reception circuit 5313 FPC
5314 I / F Unit 5315 Antenna Port 5316 VRAM
5317 DRAM
5318 Flash memory 5320 Control signal generation circuit 5321 Decoder 5322 Register 5323 Arithmetic circuit 5324 RAM
5325 Input means 5326 Microphone 5327 Speaker 5328 Antenna 5330 Housing 5331 Printed circuit board 5332 Speaker 5333 Microphone 5334 Transceiver circuit 5335 Signal processing circuit 5336 Input means 5337 Battery 5339 Case 5340 Antenna 5366 Interface 6001 Case 6002 Support base 6003 Display unit 6101 Main body 6102 Case Body 6103 Display unit 6104 Keyboard 6105 External connection port 6106 Pointing mouse 6201 Main body 6202 Display unit 6203 Switch 6204 Operation key 6205 Infrared port 6301 Case 6302 Display unit 6303 Speaker unit 6304 Operation key 6305 Recording medium insertion unit 6401 Main body 6402 Case 6403 Display Part A
6404 Display portion B
6405 Recording medium reading unit 6406 Operation key 6407 Speaker unit

Claims (6)

  A liquid crystal composition comprising a nematic liquid crystal and a chiral material and an ultraviolet curable liquid crystal added thereto. A chiral material and an ultraviolet curable liquid crystal are added to the nematic liquid crystal,
The liquid crystal composition, wherein an addition amount of the ultraviolet curable liquid crystal to the nematic liquid crystal is 5 wt% to 10 wt%.   3. The liquid crystal composition according to claim 1, wherein the nematic liquid crystal has positive dielectric anisotropy.   A pair of substrates having electrodes, at least one of which is translucent, and a light control layer supported between the substrates, the light control layer comprising a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal An electro-optical device comprising: A pair of substrates having electrodes, at least one of which is translucent, and a light control layer supported between the substrates, the light control layer comprising a nematic liquid crystal to which a chiral material is added and an ultraviolet curable liquid crystal Have
An electro-optical device, wherein an addition amount of the ultraviolet curable liquid crystal to the nematic liquid crystal is 5 wt% to 10 wt%. 6. The electro-optical device according to claim 4, wherein the nematic liquid crystal has a positive dielectric anisotropy.

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