JP2006140169A - Semiconductor apparatus and its manufacturing method - Google Patents

Semiconductor apparatus and its manufacturing method Download PDF

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JP2006140169A
JP2006140169A JP2004325851A JP2004325851A JP2006140169A JP 2006140169 A JP2006140169 A JP 2006140169A JP 2004325851 A JP2004325851 A JP 2004325851A JP 2004325851 A JP2004325851 A JP 2004325851A JP 2006140169 A JP2006140169 A JP 2006140169A
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layer
insulating film
fine particles
silica fine
semi
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Satoshi Aida
Tomoki Inoue
Hitoshi Kobayashi
Yasushi Takahashi
智樹 井上
仁 小林
聡 相田
泰 高橋
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Toshiba Corp
株式会社東芝
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Abstract

PROBLEM TO BE SOLVED: To stabilize a breakdown voltage at a junction termination portion of a high breakdown voltage element or a high breakdown voltage IC.
A high voltage diode 20 includes an N layer 2 on an N + layer 1 and a silicon substrate 3 as a cathode. N - P layer 4 on the surface of layer 2, P + layer 5, P - resurf layer 6 is provided so the respective selectively, P - resurf layer 6 apart from the, N - on the surface of the layer 2 N + A stopper layer 7 is provided. On the surface of the P RESURF layer 6, the semi-insulating film 8 composed of the polycrystalline silicon 22 filled between the silica fine particles 21 and the silica fine particles 21 is formed on the surfaces of the P + layer 5 and the N + stopper layer 7. It extends to a part of.
[Selection] Figure 1

Description

  The present invention relates to a high breakdown voltage element and a high breakdown voltage IC, and more particularly to a semiconductor device having a semi-insulating film at a junction termination portion of the element and a manufacturing method thereof.

In order to stabilize the breakdown voltage of a high breakdown voltage element such as a high breakdown voltage diode, IGBT (Insulated Gate Bipolar Transistor) or thyristor, or a high breakdown voltage IC, a P + guard ring layer or SIPOS (Semi-Insulating) Polycrystalline Silicon) film is provided (for example, see Non-Patent Document 1). Usually, the SIPOS film is formed by, for example, a CVD method using SiH 4 gas and N 2 O gas. The SIPOS film formed by the CVD method has a problem that it is difficult to control the oxygen concentration in the film, and the conductivity and resistivity of the SIPOS film change due to the change in film quality, and the device breakdown voltage becomes unstable. There is.

Further, when the high-temperature heat treatment at 800 ° C. or higher is performed on the SIPOS film, the film quality is deteriorated and the device breakdown voltage is lowered, so that the high-temperature heat treatment at 800 ° C. or higher cannot be performed after the SIPOS film is formed.
The Institute of Electrical Engineers of Japan [Power Device IC Handbook] Co., Ltd. issued on July 30, 1996 (P60 Figure 3.67, P61 Figure 3.72)

  The present invention provides a semiconductor device having a semi-insulating film for stabilizing a breakdown voltage at a junction termination portion of an element, and a method for manufacturing the same.

  A semiconductor device of one embodiment of the present invention includes a semiconductor substrate having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type selectively provided in the first semiconductor layer, , Composed of silica fine particles and polycrystalline silicon filled between the silica fine particles, amorphous silicon, or a mixture of polycrystalline silicon and amorphous silicon, and one end of the second semiconductor layer directly or through an insulating film And a semi-insulating film formed in contact with the first semiconductor layer at the other end.

  Furthermore, in the method for manufacturing a semiconductor device of one embodiment of the present invention, an insulating film is formed on the first main surface of the semiconductor substrate, the insulating film is etched, and an opening is provided on the first main surface of the semiconductor substrate. A step of applying a solution in which silica fine particles are dispersed to the insulating film and the opening; and a high-temperature heat treatment to volatilize and remove the solvent of the solution from the first main surface of the semiconductor substrate; Fixing the fine particles to the semiconductor substrate; depositing polycrystalline silicon having a particle diameter smaller than that of the silica fine particles on the first main surface of the semiconductor substrate; and embedding the polycrystalline silicon in the gaps between the silica fine particles. Forming a semi-insulating film composed of the silica fine particles and the polycrystalline silicon, and using the CMP method, the semi-insulating film on the insulating film and the first main surface of the semiconductor substrate Of semi-insulating Some removed, and characterized by comprising the step of leaving the semi-insulating film on the first major surface of the selectively the semiconductor substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which has a semi-insulating film which stabilizes a proof pressure in the junction termination part of an element, and its manufacturing method can be provided.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, a high voltage diode as a semiconductor device according to Example 1 of the present invention and a manufacturing method thereof will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing a high voltage diode, and FIG. 2 is an enlarged schematic cross-sectional view showing a semi-insulating film. In this embodiment, a semi-insulating film is provided at the junction termination portion of the high voltage diode.

As shown in FIG. 1, the 3.3 KV high voltage diode 20 includes an N layer 2 on an N + layer 1 and a silicon substrate 3 as a cathode. A P + layer 5 is provided on the surface (first main surface) of the N layer 2. P + layer 5 has one end in contact with the shallow P layer 4 than the P + layer 5 and the other end shallow P than the P + layer 5 - in contact with the RESURF layer 6. On the other hand, an N + stopper layer 7 shallower than the P + layer 5 is provided on the surface of the N layer 2 apart from the P RESURF layer 6. The P layer 4, the P + layer 5, and the P RESURF layer 6 function as an anode of the high voltage diode 20. The P RESURF layer 6 is provided in order to improve the breakdown voltage of the high breakdown voltage diode 20 and is formed at a lower concentration than the P layer 4.

On the surface (first main surface) of the P RESURF layer 6, a semi-insulating film 8 is provided so as to extend to a part on the surfaces of the P + layer 5 and the N + stopper layer 7. . A contact opening 16a is provided in the insulating film 9 covering the semi-insulating film 8 so as to expose a part of the P layer 4 and the P + layer 5, and a contact opening 16b covers a part of the N + stopper layer 7. It is provided to be exposed.

An anode electrode 10 is provided on the exposed P layer 4 and P + layer 5, and a stopper electrode 11 is provided on the exposed N + stopper layer 7. A cathode electrode 12 is provided on the back surface (second main surface) of the N + layer 1 of the silicon substrate 3.

  As shown in FIG. 2, the semi-insulating film 8 is composed of silica fine particles (also referred to as colloidal silica) 21 and polycrystalline silicon 22 filled between the silica fine particles 21, and has a thickness of, for example, 1 μm. Is formed. The silica fine particles 21 have insulating properties, and the particle size is preferably in the range of 0.1 to 0.01 μm, for example. The polycrystalline silicon 22 is formed so as to fill the voids between the silica fine particles 21, and the maximum particle size B of the polycrystalline silicon 22 is smaller than the particle size A of the silica fine particles 21. Here, the polycrystalline silicon is a collection of silicon single crystal grains, and the grain size of the polycrystalline silicon refers to the maximum dimension of the silicon single crystal grains that grow in a direction perpendicular to the silicon substrate 3. Here, since the dimension in the direction perpendicular to the silicon substrate 3 is the largest, this is the grain size of the polycrystalline silicon. Here, the particle diameters of the silica fine particles 21 and the polycrystalline silicon 22 are confirmed using a TEM, a cross-sectional SEM, or the like.

  When the particle diameter of the silica fine particles 21 is 0.1 μm or more, the ratio of the polycrystalline silicon 22 in the semi-insulating film 8 increases, so that the resistivity of the semi-insulating film 8 decreases. For this reason, the breakdown voltage of the high breakdown voltage diode 20 at the junction termination portion is reduced, and the leakage current is increased. On the other hand, when the particle size of the silica fine particles 21 is 0.01 μm or less, the difference between the particle size of the silica fine particles 21 and the particle size of the polycrystalline silicon 22 is small, and the polycrystalline silicon 22 is sufficiently contained in the void portions of the silica fine particles 21. It becomes difficult to fill. For this reason, a void portion remains in the semi-insulating film 8, the film quality of the semi-insulating film 8 becomes unstable, and the withstand voltage and the leak current level of the high withstand voltage diode 20 change.

  Here, the polycrystalline silicon 22 is buried in the voids of the silica fine particles 21, but the space between the silica fine particles 21 is filled using amorphous silicon or a mixture of polycrystalline silicon and amorphous silicon instead of the polycrystalline silicon 22. Also good. In this case, in order to desorb hydrogen in the amorphous silicon, it is preferable to perform high temperature heat treatment after the semi-insulating film 8 is formed. The resistivity of the semi-insulating film 8 can be increased by performing a high temperature heat treatment.

  Next, a method for manufacturing a high voltage diode will be described with reference to FIGS. 3 to 5 are cross-sectional views showing the manufacturing process of the high voltage diode.

As shown in FIG. 3, first, a P layer 4, a P + layer 5, a P RESURF layer 6, and an N + stopper layer are formed on the surface of the silicon substrate 3 on which the N layer 2 is formed on the N + layer 1. 7 are formed selectively. The P layer 4, the P + layer 5, the P RESURF layer 6, and the N + stopper layer 7 are formed using, for example, an ion implantation method and high temperature annealing.

Next, for example, an insulating film 13 having a thickness of 1 μm is formed on the surface of the silicon substrate 3, and a part of the P + layer 5, the P RESURF layer 6, the N layer 2, and the N + stopper layer 7 are formed. The insulating film 13 on the surface is removed by etching, and a part of the P + layer 5, the P RESURF layer 6, the N layer 2, and a part of the N + stopper layer 7 are exposed. Subsequently, a solution in which the silica fine particles 21 are dispersed is applied on the surface of the silicon substrate 3 by using, for example, a spin coat method. Here, for example, since the coating thickness is 1 μm or more, the silica fine particles 21 are also coated on the insulating film 13.

Next, high-temperature heat treatment is performed to volatilize and remove the remaining solvent, and the silica fine particles 21 and the semiconductor substrate 3 are fixed. Subsequently, polycrystalline silicon 22 is deposited by, for example, a CVD method using SiH 4 gas, and the semi-insulating film 8 is formed on the surface of the semiconductor substrate 3. Here, since the particle diameter of the polycrystalline silicon 22 is smaller than that of the silica fine particles 21, the polycrystalline silicon 22 fills the void portions of the silica fine particles 21 in the semi-insulating film 8.

Next, as shown in FIG. 4, for example, by using a CMP (Chemical Mechanical Polishing) method, the semi-insulating film 8 on the insulating film 13 is removed to expose the insulating film 13, and one P + layer 5 is formed. And the semi-insulating film 8 on the surface of the P - resurf layer 6, the N layer 2, and the N + stopper layer 7 are left. Here, the thickness of the semi-insulating film 8 is, for example, 1 μm.

Subsequently, an insulating film 9 is deposited on the semi-insulating film 8 as shown in FIG. Then, the insulating film 9 on the partial surface of the P layer 4 and the P + layer 5 is etched to form a contact opening 16a, and the insulating film 9 on the partial surface of the N + stopper layer 7 is etched to make a contact. Opening 16b is formed. Next, electrodes are formed using a well-known technique, and the high voltage diode 20 is completed.

As described above, in the semiconductor device of this example, the high breakdown voltage diode having the semi-insulating film 8 on a part of the P + layer 5, the P RESURF layer 6, the N layer 2, and the N + stopper layer 7. 20 is provided. Polycrystalline silicon 22 is buried in the voids of the silica fine particles 21 in the semi-insulating film 8. For this reason, the oxygen concentration in the semi-insulating film 8 can be controlled, and voids in the semi-insulating film 8 can be eliminated, so that the resistivity of the semi-insulating film 8 can be stably increased. Therefore, an increase in the leakage current of the element and a decrease in the breakdown voltage of the element can be significantly suppressed as compared with the prior art.

  Furthermore, since the silica fine particles 21 and the polycrystalline silicon 22 in the semi-insulating film 8 do not react even when a high temperature heat treatment at 800 ° C. or higher is performed, the film quality of the semi-insulating film 8 does not change. Therefore, high-temperature heat treatment at 800 ° C. or higher can be performed after the semi-insulating film 8 is formed, and the process conditions after the semi-insulating film 8 can be flexibly changed.

In this embodiment, the semi-insulating film 8 has one end connected to the anode electrode 10 via the P + layer 5 and the P resurf layer 6, and the other end connected to the stopper electrode 11 via the N + stopper layer 7. However, it may be directly connected to the anode electrode 10 and the stopper electrode 11. Further, C (carbon) or N (nitrogen) may be added to the silica fine particles 21 in the semi-insulating film 8.

  Next, a high voltage diode as a semiconductor device according to Example 2 of the present invention will be described with reference to the drawings. FIG. 6 is a cross-sectional view showing a high voltage diode. In this embodiment, a semi-insulating film is provided at the junction termination portion of the high voltage diode via an insulating film.

  In the following, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted, and only different portions are described.

As shown in FIG. 6, in the high voltage diode 20 a, an insulating film 14 is provided on a part of the P + layer 5, the P RESURF layer 6, and the N + stopper layer 7. A semi-insulating film 8 is provided so as to cover the surface. The semi-insulating film 8 has one end in contact with the P + layer 5 and the other end in contact with the N + stopper layer 7. A contact opening 16c is provided in the insulating film 9 covering the semi-insulating film 8 so as to expose a part of the P layer 4 and the P + layer 5, and a contact opening 16d covers a part of the N + stopper layer 7. It is provided to be exposed.

As described above, in the semiconductor device of this embodiment, the high breakdown voltage diode 20a having the semi-insulating film 8 having one end in contact with the P + layer 5 and the other end in contact with the N + stopper layer 7 on the insulating film 14. Is provided. Polycrystalline silicon 22 is buried in the voids of the silica fine particles 21 in the semi-insulating film 8. For this reason, the oxygen concentration in the semi-insulating film 8 can be controlled, and voids in the semi-insulating film 8 can be eliminated, so that the resistivity of the semi-insulating film 8 can be stably increased. Therefore, an increase in the leakage current of the element and a decrease in the breakdown voltage of the element can be significantly suppressed as compared with the conventional case.

  Furthermore, since the silica fine particles 21 and the polycrystalline silicon 22 in the semi-insulating film 8 do not react even when a high temperature heat treatment at 800 ° C. or higher is performed, the film quality of the semi-insulating film 8 does not change. Therefore, high-temperature heat treatment at 800 ° C. or higher can be performed after the semi-insulating film 8 is formed, and the process conditions after the semi-insulating film 8 is formed can be flexibly changed.

  Next, a high breakdown voltage diode as a semiconductor device according to Example 3 of the present invention and a method for manufacturing the same will be described with reference to the drawings. FIG. 7 is a sectional view showing a high voltage diode, and FIG. 8 is a schematic sectional view showing an enlarged semi-insulating film. In this embodiment, the structure of the semi-insulating film is changed.

  In the following, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted, and only different portions are described.

As shown in FIG. 7, in the high voltage diode 20b, the semi-insulating film 15 is formed on the surface of the P + layer 5 and the N + stopper layer 7 on the surface (first main surface) of the P RESURF layer 6. It extends to a part.

  As shown in FIG. 8, the semi-insulating film 15 is composed of a silica fine particle 21 and a SIPOS 23 filled between the silica fine particles, and has a thickness of 1 μm, for example. SIPOS is a name that expresses semi-insulating polycrystalline silicon in which polycrystalline silicon and SiOx are mixed. The silica fine particles 21 have insulating properties, and the particle size is preferably in the range of 0.1 to 0.01 μm, for example. The SIPOS 23 is formed so as to fill the voids between the silica fine particles 21, and the particle size thereof is smaller than that of the silica fine particles 21.

  Next, a method for manufacturing a high voltage diode will be described with reference to FIG. FIG. 9 is a cross-sectional view showing the manufacturing process of the high voltage diode.

  As shown in FIG. 9, the solution in which the silica fine particles 21 are dispersed is applied on the surface of the silicon substrate 3 by using, for example, a spin coating method. Here, for example, since the coating thickness is 1 μm or more, the silica fine particles 21 are also coated on the insulating film 13.

Next, high-temperature heat treatment is performed to volatilize and remove the remaining solvent, and the silica fine particles 21 and the semiconductor substrate 3 are fixed. Subsequently, SIPOS 23 is deposited by, for example, a CVD method using SiH 4 gas and N 2 O gas, and the semi-insulating film 8 is formed on the surface of the semiconductor substrate 3. Here, since the particle size of the SIPOS 23 is smaller than that of the silica fine particles 21, the SIPOS 23 fills the void portions of the silica fine particles 21 in the semi-insulating film 8. Since the subsequent steps are the same as those in the first embodiment, description thereof is omitted.

As described above, in the semiconductor device of this example, a high breakdown voltage having the semi-insulating film 8 on a part of the P + layer 5, the P RESURF layer 6, the N layer 2, and the N + stopper layer 7 surface. A diode 20 is provided. Then, SIPOS 23 is buried in the voids of the silica fine particles 21 in the semi-insulating film 8. For this reason, the oxygen concentration in the semi-insulating film 8 can be controlled, and voids in the semi-insulating film 8 can be eliminated, so that the resistivity of the semi-insulating film 8 is made larger than that of the first embodiment. Can do. Therefore, an increase in the leakage current of the element and a decrease in the breakdown voltage of the element can be significantly suppressed.

  Further, the silica fine particles 21 and the SIPOS 23 in the semi-insulating film 8 do not react even when a high temperature heat treatment at 800 ° C. or higher is performed. Therefore, high-temperature heat treatment at 800 ° C. or higher can be performed after the semi-insulating film 8 is formed, and the process conditions after the semi-insulating film 8 is formed can be flexibly changed.

  The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the invention.

For example, in this embodiment, the P RESURF layer 6 is provided in the anode portion, but a plurality of P + guard rings may be provided instead of the P RESURF layer 6. Moreover, although the semi-insulating film containing silica fine particles is provided at the terminal portion of the high voltage diode, a semi-insulating film containing silica fine particles may be provided at the terminal portions of IGBT, thyristor and the like. In addition to a silicon device, a semi-insulating film containing silica fine particles may be used for a compound device such as SiC.

The present invention can be configured as described in the following supplementary notes.
(Additional remark 1) It is comprised from the high voltage | pressure-resistant element selectively provided in the 1st main surface of a semiconductor substrate, and the SIPOS which touched the junction termination | terminus part of the said high voltage | pressure-resistant element, and was filled between the silica fine particles. A semiconductor device comprising: a semi-insulating film formed directly or via an insulating film on the first main surface of the semiconductor substrate.

(Appendix 2) A first conductivity type semiconductor substrate, a second conductivity type high concentration semiconductor layer selectively provided on a first main surface of the semiconductor substrate, and one end of the high concentration semiconductor layer are in contact with each other, The second conductivity type semiconductor layer selectively provided on the first main surface of the semiconductor substrate and the other end of the high-concentration semiconductor layer are in contact with the first main surface of the semiconductor substrate. A second conductivity type RESURF layer having a lower concentration than the semiconductor layer, a first conductivity type high concentration stopper layer that is separated from the RESURF layer and selectively provided on the first main surface of the semiconductor substrate; An insulating film provided on the first main surface of the RESURF layer and extending to a part of the first main surface of the high-concentration semiconductor layer and the high-concentration stopper layer; and provided on the insulating film; One end is in contact with the high concentration semiconductor layer, the other end is in contact with the high concentration stopper layer, silica fine particles and Serial semiconductor device than the silica fine particles are filled between the silica fine particles and a semi-insulating film which is composed of a small polycrystalline silicon grain size.

(Supplementary Note 3) A first conductivity type semiconductor substrate, a second conductivity type high concentration semiconductor layer selectively provided on the first main surface of the semiconductor substrate, and one end of the high concentration semiconductor layer are in contact with each other, The second conductivity type semiconductor layer selectively provided on the first main surface of the semiconductor substrate and the other end of the high-concentration semiconductor layer are in contact with the first main surface of the semiconductor substrate. A second conductivity type RESURF layer having a lower concentration than the semiconductor layer, a first conductivity type high concentration stopper layer that is separated from the RESURF layer and selectively provided on the first main surface of the semiconductor substrate; On the first main surface of the RESURF layer, the high-concentration semiconductor layer and the high-concentration stopper layer are provided so as to extend to a part of the first main surface, and are filled between the silica fine particles and the silica fine particles. Composed of amorphous silicon with a smaller particle size than silica fine particles Semiconductor device including an insulating film.

(Supplementary Note 4) A first conductivity type semiconductor substrate, a second conductivity type high concentration semiconductor layer selectively provided on a first main surface of the semiconductor substrate, and one end of the high concentration semiconductor layer are in contact with each other, The second conductivity type semiconductor layer selectively provided on the first main surface of the semiconductor substrate and the other end of the high-concentration semiconductor layer are in contact with the first main surface of the semiconductor substrate. A second conductivity type RESURF layer having a lower concentration than the semiconductor layer, a first conductivity type high concentration stopper layer that is separated from the RESURF layer and selectively provided on the first main surface of the semiconductor substrate; An insulating film provided on the first main surface of the RESURF layer and extending to a part of the first main surface of the high-concentration semiconductor layer and the high-concentration stopper layer; and provided on the insulating film; One end is in contact with the high concentration semiconductor layer, the other end is in contact with the high concentration stopper layer, silica fine particles and Semiconductor device including a semi-insulating film composed of an amorphous silicon filled between serial silica fine particles.

Sectional drawing which shows the high voltage | pressure-resistant diode which concerns on Example 1 of this invention. The cross-sectional schematic diagram which expands and shows the semi-insulating film which concerns on Example 1 of this invention. Sectional drawing which shows the manufacturing process of the high voltage | pressure-resistant diode which concerns on Example 1 of this invention. Sectional drawing which shows the manufacturing process of the high voltage | pressure-resistant diode which concerns on Example 1 of this invention. Sectional drawing which shows the manufacturing process of the high voltage | pressure-resistant diode which concerns on Example 1 of this invention. Sectional drawing which shows the high voltage | pressure-resistant diode which concerns on Example 2 of this invention. Sectional drawing which shows the high voltage | pressure-resistant diode which concerns on Example 3 of this invention. The cross-sectional schematic diagram which expands and shows the semi-insulating film which concerns on Example 3 of this invention. Sectional drawing which shows the manufacturing process of the high voltage | pressure-resistant diode which concerns on Example 3 of this invention.

Explanation of symbols

1 N + layer 2 N - layer 3 Silicon substrate 4 P layer 5 P + layer 6 P - RESURF layer 7 N + stopper layer 8, 15 Semi-insulating films 9, 13, 14 Insulating film 10 Anode electrode 11 Stopper electrode 12 Cathode Electrode 13 Drain electrodes 16a, 16b, 16c, 16d Contact openings 20, 20a, 20b High voltage diode 21 Silica fine particles 22 Polycrystalline silicon 23 SIPOS

Claims (5)

  1. A semiconductor substrate having a first semiconductor layer of a first conductivity type;
    A second semiconductor layer of a second conductivity type selectively provided on the first semiconductor layer;
    It is composed of silica fine particles and polycrystalline silicon filled between the silica fine particles, amorphous silicon, or a mixture of polycrystalline silicon and amorphous silicon, and one end is in contact with the second semiconductor layer directly or through an insulating film. And a semi-insulating film formed at the other end in contact with the first semiconductor layer.
  2. A semiconductor substrate having a first semiconductor layer of a first conductivity type;
    A second semiconductor layer of a second conductivity type selectively provided on the first semiconductor layer;
    It is composed of silica fine particles and polycrystalline silicon particles having a smaller particle diameter than the silica fine particles filled between the silica fine particles, one end is in contact with the second semiconductor layer directly or through an insulating film, and the other A semiconductor device comprising: a semi-insulating film having an end formed in contact with the first semiconductor layer.
  3. A first conductivity type semiconductor substrate;
    A first semiconductor layer of a second conductivity type selectively provided on the semiconductor substrate;
    A second semiconductor layer in contact with one end of the first semiconductor layer and having a higher concentration of impurities than the first semiconductor layer of the second conductivity type selectively provided on the semiconductor substrate;
    A second conductivity type RESURF layer in contact with the second semiconductor layer, opposite to the first semiconductor layer, and having a lower concentration of impurities than the first semiconductor layer selectively provided on the semiconductor substrate. When,
    A stopper layer having a higher concentration of impurities than the semiconductor substrate of the first conductivity type, which is separated from the RESURF layer and selectively provided on the semiconductor substrate;
    The silica fine particles provided between the silica fine particles and the silica fine particles, which are provided on the RESURF layer directly or via an insulating film, extending to a part of the second semiconductor layer and the stopper layer. A semiconductor device comprising a semi-insulating film composed of polycrystalline silicon grains having a smaller grain size.
  4.   4. The semiconductor device according to claim 1, wherein a particle diameter of silica fine particles of the semi-insulating film is in a range of 0.01 μm or more and 0.1 μm or less.
  5. Forming an insulating film on the semiconductor substrate, selectively etching the insulating film, and providing an opening on the semiconductor substrate;
    Applying a solution in which silica fine particles are dispersed in a solvent on the insulating film and the opening; and
    Removing the solvent of the solution by volatilization, and fixing the silica fine particles and the semiconductor substrate by heat treatment;
    Polycrystalline silicon grains having a particle diameter smaller than that of the silica fine particles are deposited on a semiconductor substrate, and are composed of the silica fine particles and the polycrystalline silicon grains in which the polycrystalline silicon grains are embedded in voids between the silica fine particles. Forming a semi-insulating film;
    Removing the semi-insulating film on the insulating film and the opening, and selectively leaving the semi-insulating film in the opening.
JP2004325851A 2004-11-10 2004-11-10 Semiconductor apparatus and its manufacturing method Pending JP2006140169A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8350270B2 (en) 2008-03-07 2013-01-08 Mitsubishi Electric Corporation Silicon carbide semiconductor device and method for manufacturing the same
WO2013061433A1 (en) * 2011-10-26 2013-05-02 トヨタ自動車株式会社 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8350270B2 (en) 2008-03-07 2013-01-08 Mitsubishi Electric Corporation Silicon carbide semiconductor device and method for manufacturing the same
WO2013061433A1 (en) * 2011-10-26 2013-05-02 トヨタ自動車株式会社 Semiconductor device
US8736029B2 (en) 2011-10-26 2014-05-27 Toyota Jidosha Kabushiki Kaisha Semiconductor apparatus
DE112011105785B4 (en) * 2011-10-26 2015-05-13 Toyota Jidosha Kabushiki Kaisha Semiconductor device

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