JP2006059599A - Method for manufacturing electroluminescence element - Google Patents

Method for manufacturing electroluminescence element Download PDF

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JP2006059599A
JP2006059599A JP2004238732A JP2004238732A JP2006059599A JP 2006059599 A JP2006059599 A JP 2006059599A JP 2004238732 A JP2004238732 A JP 2004238732A JP 2004238732 A JP2004238732 A JP 2004238732A JP 2006059599 A JP2006059599 A JP 2006059599A
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mask
opening edge
edge portion
electrode
substrate
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Hirotake Iwata
大武 岩田
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Toyota Industries Corp
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Toyota Industries Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming a sealing film capable of enhancing the patterning precision and film thickness uniformity of the sealing film by a CVD method. <P>SOLUTION: A metal mask 2 formed on the lower surface 1a of a substrate 1 has a mask body 4 with a plate thickness of around 0.5 mm, and an opening edge 5 located on the periphery of its opening is formed so as to be thinner than the plate thickness of the mask body 4. In the metal mask 2, while the first principal surface 2a of a pair of principal surfaces abuts on the surface of the substrate 1, a step is formed between the mask body 4 and the opening edge 5 by cutting out the opening edge 5 of a second principal surface 2b. In forming the sealing film, the metal mask 2 is first formed on the lower surface 1a of the substrate 1, and then the sealing film 9 is formed to cover a first electrode 6, a light emitting layer 7, and a second electrode 8 on the substrate 1 via the opening of the metal mask 2 by the plasma CVD method. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、エレクトロルミネッセンス素子の製造方法に関する。   The present invention relates to a method for manufacturing an electroluminescence element.

例えば、特許文献１には、蒸着法によるエレクトロルミネッセンス素子の形成に用いられるメタルマスクが開示されている。このメタルマスクは、０．０７ｍｍ程度の薄い板厚を有すると共に所定の開口パターンが形成されており、その開口エッジ部に段差を有している。基板の下面上にこのメタルマスクを配置し、メタルマスクの下方に配置された蒸着源からメタルマスクの開口を通して蒸着することにより、微細パターンを有するエレクトロルミネッセンス素子が形成される。このような蒸着法では、一般に、マグネット吸着によりメタルマスクを基板の表面上に吸着させてメタルマスクの撓みを防止している。   For example, Patent Document 1 discloses a metal mask used for forming an electroluminescence element by a vapor deposition method. This metal mask has a thin plate thickness of about 0.07 mm, a predetermined opening pattern is formed, and has a step at the opening edge. An electroluminescent element having a fine pattern is formed by disposing the metal mask on the lower surface of the substrate and performing vapor deposition through an opening of the metal mask from a vapor deposition source disposed below the metal mask. In such a vapor deposition method, generally, a metal mask is adsorbed on the surface of a substrate by magnet adsorption to prevent the metal mask from bending.

特開２００１−２３７０７２号公報JP 2001-237072 A

近年、ＣＶＤ法により窒化珪素等からなる封止膜をエレクトロルミネッセンス素子の表面に形成する際に、エレクトロルミネッセンス素子の電極の取出し部分等を覆うために上述のようなマスクを用いて封止膜を形成することが行われているが、ＣＶＤ法ではマグネット吸着を使用できないため、上述の特許文献１のような薄いマスクを用いると、マスクが撓んでしまい、封止膜を所定のパターンに精度よく形成することができないという不具合が生じる。   In recent years, when a sealing film made of silicon nitride or the like is formed on the surface of an electroluminescent element by a CVD method, the sealing film is formed using the mask as described above in order to cover an extraction portion of the electrode of the electroluminescent element. However, since the magnet adsorption cannot be used in the CVD method, if a thin mask such as the above-mentioned Patent Document 1 is used, the mask is bent and the sealing film is accurately formed into a predetermined pattern. There arises a problem that it cannot be formed.

これに対し、マスクの板厚を厚くして剛性を向上させることによりマスクの撓みを防止しようとすると、板厚が厚くなったために、メタルマスクの開口エッジ部の影響により開口エッジ部近傍に形成される封止膜の膜厚が薄くなり、膜厚の均一性が低下してしまう。このように膜厚が均一でないと、その膜厚差により膜の応力が集中する部分が発生してその部分のバリア性が低下し、そこからエレクトロルミネッセンス素子内に水分及びガスが浸入して発光層が劣化することにより非発光部が成長し、時間の経過に伴って非発光部が発光層の全面に拡がって画質の劣化や輝度の低下、寿命の短縮化などを招くこととなる。   On the other hand, if the mask thickness is increased by increasing the thickness of the mask to improve the rigidity, the thickness of the mask has increased, so it is formed near the opening edge due to the influence of the opening edge of the metal mask. The film thickness of the sealing film is reduced, and the film thickness uniformity is reduced. If the film thickness is not uniform as described above, a portion where the stress of the film is concentrated is generated due to the difference in film thickness, and the barrier property of the portion is lowered. Then, moisture and gas enter the electroluminescence element to emit light. As the layer deteriorates, the non-light-emitting portion grows, and as time elapses, the non-light-emitting portion spreads over the entire surface of the light-emitting layer, leading to deterioration in image quality, reduction in luminance, shortening of life, and the like.

この発明はこのような問題点を解消するためになされたもので、ＣＶＤ法による封止膜のパターニング精度及び膜厚均一性の向上を図ることができるエレクトロルミネッセンス素子の製造方法を提供することを目的とする。   The present invention has been made to solve such problems, and provides a method for manufacturing an electroluminescent element capable of improving the patterning accuracy and film thickness uniformity of a sealing film by a CVD method. Objective.

この発明に係るエレクトロルミネッセンス素子の製造方法は、基板上に第１電極を形成する工程と、第１電極上に発光層を形成する工程と、発光層上に第２電極を形成する工程と、第２電極上に封止膜を形成する工程とを含むエレクトロルミネッセンス素子の製造方法であって、封止膜を形成する工程において、封止膜の成膜領域を規定する開口部を備えたマスクが基板に接した状態でＣＶＤ法により第１電極、発光層及び第２電極を覆うように封止膜を形成する。ここで、マスクは、０．１ｍｍから１０ｍｍの板厚を有するマスク本体部と、マスク本体部の板厚よりも薄く形成された開口エッジ部とを有し、開口エッジ部が基板と接するように配置されていることを特徴とするエレクトロルミネッセンス素子の製造方法である。
封止膜形成工程時には、まず基板の表面上にマスクの開口エッジ部が接するようにマスクを配置し、次にマスクの開口を介してＣＶＤ法により基板上の第１電極、発光層及び第２電極を覆うように封止膜を形成し、これにより封止を行う。マスクの開口の周縁部に位置する開口エッジ部はマスク本体部の板厚よりも薄く形成されているため、封止膜の膜厚への開口エッジ部の影響が軽減され、これにより封止膜の膜厚の均一性を向上させることができる。 The method for manufacturing an electroluminescent element according to the present invention includes a step of forming a first electrode on a substrate, a step of forming a light emitting layer on the first electrode, a step of forming a second electrode on the light emitting layer, A method of manufacturing an electroluminescent element including a step of forming a sealing film on a second electrode, wherein the mask includes an opening that defines a film formation region of the sealing film in the step of forming the sealing film A sealing film is formed so as to cover the first electrode, the light emitting layer, and the second electrode by a CVD method in a state where the substrate is in contact with the substrate. Here, the mask has a mask main body portion having a plate thickness of 0.1 mm to 10 mm, and an opening edge portion formed thinner than the plate thickness of the mask main body portion so that the opening edge portion is in contact with the substrate. It is the manufacturing method of the electroluminescent element characterized by arrange | positioning.
In the sealing film forming step, the mask is first arranged so that the opening edge of the mask is in contact with the surface of the substrate, and then the first electrode, the light emitting layer, and the second on the substrate are formed by CVD through the opening of the mask. A sealing film is formed so as to cover the electrodes, thereby sealing. Since the opening edge portion located at the peripheral edge of the mask opening is formed thinner than the plate thickness of the mask main body, the influence of the opening edge portion on the film thickness of the sealing film is reduced. The film thickness uniformity can be improved.

マスクの開口エッジ部は、マスクの基板に対向する面とは反対側の面を切り欠くことによりマスク本体部の板厚よりも薄く形成されていることが好ましい。
マスクの開口エッジ部は、マスク本体部に対して階段状の段差を生じるような断面形状に形成することができる。例えば、開口エッジ部がマスク本体部に対して１段の段差を生じるように形成することができ、このときマスク本体部と開口エッジ部との板厚差ΔＴに対する開口エッジ部の幅Ｗの比率Ｗ／ΔＴが０．５〜１０であることが好ましい。 The opening edge portion of the mask is preferably formed thinner than the plate thickness of the mask main body portion by cutting out the surface of the mask opposite to the surface facing the substrate.
The opening edge of the mask can be formed in a cross-sectional shape that produces a stepped step with respect to the mask body. For example, the opening edge portion can be formed to have one step with respect to the mask main body portion. At this time, the ratio of the width W of the opening edge portion to the plate thickness difference ΔT between the mask main body portion and the opening edge portion. It is preferable that W / ΔT is 0.5 to 10.

また、マスクの開口エッジ部は、エッジ先端部に向かうほどその板厚が薄くなるように形成することができる。例えば、開口エッジ部は、テーパー状の断面形状を有する、または基板とは反対の方向へ凸状に突出した断面形状を有する、または基板の方向へ凹状に窪んだ断面形状を有するように形成することができる。
マスクは、補強部材により支持された状態で用いられることが好ましい。その場合、補強部材はマスク本体部に対応して配置されるリブを有することがより好ましい。 Moreover, the opening edge part of a mask can be formed so that the plate | board thickness may become thin, so that it goes to the edge front-end | tip part. For example, the opening edge portion has a tapered cross-sectional shape, or has a cross-sectional shape protruding convexly in a direction opposite to the substrate, or a cross-sectional shape recessed concavely toward the substrate. be able to.
The mask is preferably used in a state where it is supported by the reinforcing member. In that case, it is more preferable that the reinforcing member has a rib arranged corresponding to the mask main body.

この発明によれば、ＣＶＤ法による封止膜のパターニング精度及び膜厚均一性の向上を図ることができる。   According to the present invention, the patterning accuracy and film thickness uniformity of the sealing film by the CVD method can be improved.

以下、この発明の実施の形態を添付図面に基づいて説明する。
図１を参照して、この発明の実施の形態に係る有機エレクトロルミネッセンス素子（以下、適宜、有機ＥＬ素子と称する。）の製造方法を説明する。基板１の下面１ａ上にメタルマスク２が配置されており、メタルマスク２には図２に示されるような封止膜の成膜領域を規定する開口部３が貫通形成されている。メタルマスク２は、０．５ｍｍ程度の板厚を有するマスク本体部４を有すると共に、開口部３の周縁部に位置する開口エッジ部５がマスク本体部４の板厚よりも薄く形成されている。 Embodiments of the present invention will be described below with reference to the accompanying drawings.
With reference to FIG. 1, the manufacturing method of the organic electroluminescent element (henceforth an organic EL element suitably) which concerns on embodiment of this invention is demonstrated. A metal mask 2 is disposed on the lower surface 1a of the substrate 1, and an opening 3 that defines a film formation region of a sealing film as shown in FIG. The metal mask 2 has a mask main body 4 having a plate thickness of about 0.5 mm, and an opening edge portion 5 located at the peripheral edge of the opening 3 is formed thinner than the plate thickness of the mask main body 4. .

また、メタルマスク２は、一対の主面のうち第１の主面２ａが基板１の表面に接するように配置される。即ち、メタルマスク２の開口エッジ部５が基板１の表面に接するように配置されている。一方、メタルマスク２の第２の主面２ｂにおける開口エッジ部５が断面矩形状に切り欠かれてマスク本体部４よりも板厚ΔＴだけ薄く形成されており、マスク本体部４と開口エッジ部５との間には段差が設けられている。   Further, the metal mask 2 is arranged such that the first main surface 2 a of the pair of main surfaces is in contact with the surface of the substrate 1. That is, the opening edge portion 5 of the metal mask 2 is disposed so as to contact the surface of the substrate 1. On the other hand, the opening edge portion 5 in the second main surface 2b of the metal mask 2 is notched in a rectangular cross section and is formed thinner than the mask main body portion 4 by a plate thickness ΔT, and the mask main body portion 4 and the opening edge portion are formed. There is a step between 5 and 5.

なお、開口エッジ部５は、その幅Ｗがマスク本体部４と開口エッジ部５の板厚差ΔＴに対して比率Ｗ／ΔＴ＝０．５〜１０となるように形成されることが好ましい。また、メタルマスク２は、インバー、コバール及びＳＵＳ４３０等から形成することができる。また、開口エッジ部５はマスク本体部４に対して上述のように１段の段差を生じる代わりに、複数段の段差を階段状に生じるように形成してもよい。
また、基板１の下面１ａ上には第１電極６、発光層７及び第２電極８が形成されており、メタルマスク２が基板１の下面１ａ上の所定の位置に配置されることで、発光層７の発光領域がメタルマスク２の開口部３内に位置して露出する一方、第１電極及び第２電極の電極取出し部等（図示せず）がメタルマスク２のマスク本体部４または開口エッジ部５により覆われるように構成されている。 The opening edge portion 5 is preferably formed so that the width W thereof is a ratio W / ΔT = 0.5 to 10 with respect to the plate thickness difference ΔT between the mask main body portion 4 and the opening edge portion 5. The metal mask 2 can be formed of Invar, Kovar, SUS430, or the like. Further, the opening edge portion 5 may be formed such that a plurality of steps are generated in a stepped manner instead of generating one step as described above with respect to the mask body 4.
Further, the first electrode 6, the light emitting layer 7 and the second electrode 8 are formed on the lower surface 1 a of the substrate 1, and the metal mask 2 is disposed at a predetermined position on the lower surface 1 a of the substrate 1. While the light emitting region of the light emitting layer 7 is located and exposed in the opening 3 of the metal mask 2, the electrode extraction portions of the first electrode and the second electrode (not shown) are the mask main body 4 of the metal mask 2 or The opening edge portion 5 is configured to be covered.

次に、有機ＥＬ素子の製造工程を説明する。
まず、第１電極６としてのＩＴＯ付きの基板１の上にＡｌｑなどの有機物からなる発光層７を公知の薄膜形成法を用いて形成する。発光層７としては、単一の層でもよく、また複数の層から構成されるものでもよい。なお、ここで発光層とは、単に光を発する層のみを意味するものではなく、例えば、電子注入層、電子輸送層、発光層、正孔輸送層、正孔注入層等の組み合わせも含むものとする。
第１電極６上に発光層７を積層した後、発光層７の上に第２電極８としてのＡｌなどの金属又は金属合金などを発光層７と同様に真空蒸着法などの公知の薄膜形成法を用いて形成する。
次に、第１電極６、発光層７及び第２電極８を覆うように封止膜９を形成する封止膜形成工程を行う。封止膜９の形成時には、まず基板１の下面１ａ上にメタルマスク２を配置する。メタルマスク２の開口部３を介してプラズマＣＶＤ法により基板１上の第１電極６、発光層７及び第２電極８を覆うように封止膜９を形成し、これにより第１電極６、発光層７及び第２電極８が封止される。ここで、メタルマスク２のマスク本体部４は０．５ｍｍ程度の板厚を有するため、従来の薄い板厚を有するマスクに比べて剛性が向上され撓みが防止される。そのため、封止膜９を所望のパターンに精度よく形成することができる。
封止膜９としては、酸化窒素、酸化珪素、酸窒化珪素などを用いることができる。 Next, the manufacturing process of an organic EL element is demonstrated.
First, the light emitting layer 7 made of an organic substance such as Alq is formed on the substrate 1 with ITO as the first electrode 6 by using a known thin film forming method. The light emitting layer 7 may be a single layer or a plurality of layers. Here, the light emitting layer does not simply mean a layer that emits light, but includes, for example, a combination of an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, and the like. .
After the light emitting layer 7 is laminated on the first electrode 6, a known thin film such as a vacuum evaporation method is formed on the light emitting layer 7 by using a metal such as Al or a metal alloy as the second electrode 8 in the same manner as the light emitting layer 7. Form using the method.
Next, a sealing film forming step for forming a sealing film 9 so as to cover the first electrode 6, the light emitting layer 7 and the second electrode 8 is performed. When forming the sealing film 9, first, the metal mask 2 is disposed on the lower surface 1 a of the substrate 1. A sealing film 9 is formed so as to cover the first electrode 6, the light emitting layer 7 and the second electrode 8 on the substrate 1 by the plasma CVD method through the opening 3 of the metal mask 2, whereby the first electrode 6, The light emitting layer 7 and the second electrode 8 are sealed. Here, since the mask main body 4 of the metal mask 2 has a plate thickness of about 0.5 mm, the rigidity is improved and the bending is prevented as compared with a mask having a conventional thin plate thickness. Therefore, the sealing film 9 can be accurately formed in a desired pattern.
As the sealing film 9, nitrogen oxide, silicon oxide, silicon oxynitride, or the like can be used.

また、メタルマスク２の開口エッジ部５はマスク本体部４の板厚よりも薄く形成されているため、封止膜９の膜厚への開口エッジ部５の影響が軽減され、これにより封止膜９の膜厚の均一性を向上させることができる。その結果、膜厚差による膜の応力集中が低減され、これにより水分やガスに対して優れたバリア性を確保することができ、水分やガスの有機ＥＬ素子内への浸入に起因した非発光部の発生による画質の劣化や輝度の低下、寿命の短縮化等の不具合を防止することができる。
なお、薄い板厚に形成されるのは開口エッジ部５のみであるので、メタルマスク２全体として優れた強度を保持することができる。 Further, since the opening edge portion 5 of the metal mask 2 is formed to be thinner than the plate thickness of the mask main body portion 4, the influence of the opening edge portion 5 on the film thickness of the sealing film 9 is reduced. The uniformity of the film thickness of the film 9 can be improved. As a result, the stress concentration of the film due to the difference in film thickness is reduced, thereby ensuring an excellent barrier property against moisture and gas, and non-light emission due to the penetration of moisture and gas into the organic EL element It is possible to prevent inconveniences such as image quality deterioration, luminance reduction, and shortening of life due to the occurrence of the portion.
In addition, since only the opening edge part 5 is formed in thin plate | board thickness, the intensity | strength outstanding as the whole metal mask 2 can be hold | maintained.

なお、上述の実施の形態では、開口エッジ部５がほぼ一定の板厚を有すると共にマスク本体部４に対して段差を生じるような断面形状を有していたが、その代わりに、開口エッジ部５の板厚がエッジ先端部に向かうほどその板厚が薄くなるように形成しても、上述の実施の形態と同様の効果が得られる。例えば、開口エッジ部５が、図３に示すようにテーパー状の断面形状を有する、または図４に示すように基板１とは反対の方向へ凸状に突出した断面形状を有する、または図５に示すように基板１の方向へ凹状に窪んだ断面形状を有するように形成することができる。   In the above-described embodiment, the opening edge portion 5 has a substantially constant plate thickness and a cross-sectional shape that creates a step with respect to the mask main body portion 4. Even if the thickness of the plate 5 becomes thinner toward the edge tip, the same effect as in the above embodiment can be obtained. For example, the opening edge portion 5 has a tapered cross-sectional shape as shown in FIG. 3, or has a cross-sectional shape protruding in a convex shape in the opposite direction to the substrate 1 as shown in FIG. As shown in FIG. 3, the substrate 1 can be formed to have a cross-sectional shape that is recessed in the direction of the substrate 1.

また、図３に示されるように開口エッジ部５がテーパー状の断面形状を有するものの変形例として、開口エッジ部５が図６（ａ）に示すエッジ先端部、図６（ｂ）に示すエッジ基端部、図６（ｃ）に示すエッジ先端部及び基端部の双方にそれぞれ段差を有するように形成することもできる。なお、開口エッジ部５が図４または図５の断面形状を有するものについても、そのエッジ先端部及び基端部の少なくとも一方に段差を有するように形成することもできる。   Further, as shown in FIG. 3, as a modification of the case where the opening edge portion 5 has a tapered cross-sectional shape, the opening edge portion 5 has an edge tip portion shown in FIG. 6 (a) and an edge portion shown in FIG. 6 (b). It can also be formed so as to have a step at both the base end, the edge front end and the base end shown in FIG. Note that the opening edge portion 5 having the cross-sectional shape shown in FIG. 4 or 5 can also be formed so as to have a step in at least one of the edge tip portion and the base end portion.

また、メタルマスク２を、図７に示されるように、メタルマスク２の周縁部を保持するマスクフレーム１０と、マスク本体部４に対応して配置され且つこのマスク本体部４を保持するリブ１１とを有する補強部材を用いて基板１の下面１ａに向かって支持すれば、メタルマスク２の撓みを確実に防止することができる。   Further, as shown in FIG. 7, the metal mask 2 has a mask frame 10 that holds the peripheral portion of the metal mask 2, and a rib 11 that is arranged corresponding to the mask body 4 and holds the mask body 4. The metal mask 2 can be surely prevented from being bent if it is supported toward the lower surface 1a of the substrate 1 using a reinforcing member having

なお、上述の実施の形態では、メタルマスク２のマスク本体部４は０．５ｍｍ程度の板厚を有していたが、これに限定されるものではなく、マスク本体部４が０．１ｍｍから１０ｍｍの板厚を有するものであればよい。特に、マスク本体部４が０．１〜１ｍｍ程度の板厚を有することが好ましい。
また、メタルマスク２の代わりに、セラミック等のメタル以外の材質から形成されたマスクを用いても、上述の実施の形態と同様の効果が得られる。 In the above-described embodiment, the mask main body 4 of the metal mask 2 has a thickness of about 0.5 mm. However, the present invention is not limited to this, and the mask main body 4 starts from 0.1 mm. Any material having a plate thickness of 10 mm may be used. In particular, the mask body 4 preferably has a thickness of about 0.1 to 1 mm.
Further, even when a mask formed of a material other than metal such as ceramic is used instead of the metal mask 2, the same effect as the above-described embodiment can be obtained.

なお、上述の実施の形態では、メタルマスク２の第１の主面２ａが基板１の下面１ａに対向するように配置し、基板１の下面１ａに形成された第１電極６、発光層７及び第２電極８を覆うようにメタルマスク２の開口を通して封止膜９を形成する、いわゆるデポアップ方式の形成方法について説明したが、これに限るものではなく、この発明は、メタルマスク２の第１の主面２ａが基板１の上面に対向するように配置し、基板１の上面に形成された図示されない第１電極、発光層及び第２電極を覆うようにメタルマスク２の開口を通して封止膜９を形成する、いわゆるデポダウン方式の形成方法にも適用される。   In the above-described embodiment, the first main surface 2 a of the metal mask 2 is disposed so as to face the lower surface 1 a of the substrate 1, and the first electrode 6 and the light emitting layer 7 formed on the lower surface 1 a of the substrate 1 are used. Although the so-called deposition-up method for forming the sealing film 9 through the opening of the metal mask 2 so as to cover the second electrode 8 has been described, the present invention is not limited to this, and the present invention is not limited to this. 1 is arranged so that the main surface 2a faces the upper surface of the substrate 1, and is sealed through the opening of the metal mask 2 so as to cover the first electrode, the light emitting layer and the second electrode (not shown) formed on the upper surface of the substrate 1. The present invention is also applied to a so-called deposition down method for forming the film 9.

また、上述の実施の形態では、プラズマＣＶＤ法により封止膜９を形成していたが、その代わりに、熱ＣＶＤ法等の他のＣＶＤ法を用いることもできる。   In the above-described embodiment, the sealing film 9 is formed by the plasma CVD method. Instead, another CVD method such as a thermal CVD method may be used.

また、上述の実施の形態では、有機ＥＬ素子の製造方法を示したが、これに限らず、無機ＥＬ素子であってもよい。   Moreover, in the above-mentioned embodiment, although the manufacturing method of the organic EL element was shown, not only this but an inorganic EL element may be sufficient.

また、上述の実施の形態では、第１電極６がＩＴＯを使用し、第２電極８がＡｌなどの金属又は金属合金を使用していたが第１電極６がＡｌなどの金属又は金属合金を使用し、第２電極８がＩＴＯなどの透明な電極を用いてもよい。当然、第１電極６及び第２電極８がそれぞれＩＴＯなどの透明な電極を用いてもよい。   In the above embodiment, the first electrode 6 uses ITO and the second electrode 8 uses a metal or metal alloy such as Al. However, the first electrode 6 uses a metal or metal alloy such as Al. Alternatively, the second electrode 8 may be a transparent electrode such as ITO. Of course, the first electrode 6 and the second electrode 8 may each be a transparent electrode such as ITO.

この発明の実施の形態に係るエレクトロルミネッセンスの製造方法を示す図である。It is a figure which shows the manufacturing method of the electroluminescence which concerns on embodiment of this invention. 実施の形態で用いられたメタルマスクを示す平面図である。It is a top view which shows the metal mask used in embodiment. 他の実施の形態で用いられたメタルマスクの開口エッジ部近傍の構造を示す部分断面図である。It is a fragmentary sectional view which shows the structure of the opening edge part vicinity of the metal mask used in other embodiment. 他の実施の形態で用いられたメタルマスクの開口エッジ部近傍の構造を示す部分断面図である。It is a fragmentary sectional view which shows the structure of the opening edge part vicinity of the metal mask used in other embodiment. 他の実施の形態で用いられたメタルマスクの開口エッジ部近傍の構造を示す部分断面図である。It is a fragmentary sectional view which shows the structure of the opening edge part vicinity of the metal mask used in other embodiment. （ａ）〜（ｃ）は、それぞれ図３のメタルマスクの変形例における開口エッジ部近傍の構造を示す部分断面図である。(A)-(c) is a fragmentary sectional view which shows the structure of the opening edge part vicinity in the modification of the metal mask of FIG. 3, respectively. メタルマスクの補強部材を示す平面図である。It is a top view which shows the reinforcement member of a metal mask.

符号の説明Explanation of symbols

１ 基板、１ａ 下面、２ メタルマスク、２ａ 第１の主面、２ｂ 第２の主面、３ 開口、４ マスク本体部、５ 開口エッジ部、６ 第１電極、７ 発光層、８ 第２電極、９ 封止膜、１０ マスクフレーム、１１ リブ。   DESCRIPTION OF SYMBOLS 1 Board | substrate, 1a Lower surface, 2 Metal mask, 2a 1st main surface, 2b 2nd main surface, 3 Aperture, 4 Mask main-body part, 5 Opening edge part, 6 1st electrode, 7 Light emitting layer, 8 2nd electrode , 9 Sealing film, 10 Mask frame, 11 Rib.

Claims (10)

基板上に第１電極を形成する工程と、該第１電極上に発光層を形成する工程と、該発光層上に第２電極を形成する工程と、該第２電極上に封止膜を形成する工程とを含むエレクトロルミネッセンス素子の製造方法であって、
前記封止膜を形成する工程において、前記封止膜の成膜領域を規定する開口部を備えたマスクが前記基板に接した状態でＣＶＤ法により前記第１電極、前記発光層及び前記第２電極を覆うように前記封止膜を形成し、
前記マスクは、０．１ｍｍから１０ｍｍの板厚を有するマスク本体部と、該マスク本体部の板厚よりも薄く形成された開口エッジ部とを有し、
前記開口エッジ部が前記基板と接するように配置されている
ことを特徴とするエレクトロルミネッセンス素子の製造方法。 Forming a first electrode on the substrate; forming a light emitting layer on the first electrode; forming a second electrode on the light emitting layer; and forming a sealing film on the second electrode. A method of manufacturing an electroluminescent element including a step of forming,
In the step of forming the sealing film, the first electrode, the light emitting layer, and the second are formed by a CVD method in a state where a mask having an opening that defines a film formation region of the sealing film is in contact with the substrate. Forming the sealing film so as to cover the electrode;
The mask has a mask body portion having a plate thickness of 0.1 mm to 10 mm, and an opening edge portion formed thinner than the plate thickness of the mask body portion,
The manufacturing method of an electroluminescence element, wherein the opening edge portion is disposed so as to be in contact with the substrate. 前記マスクの開口エッジ部は、該マスクの前記基板に対向する面とは反対側の面を切り欠くことにより前記マスク本体部の板厚よりも薄く形成されている請求項１に記載のエレクトロルミネセンス素子の製造方法。   2. The electroluminescent device according to claim 1, wherein the opening edge portion of the mask is formed thinner than a plate thickness of the mask main body portion by cutting out a surface of the mask opposite to the surface facing the substrate. Sense element manufacturing method. 前記マスクの開口エッジ部は、前記マスク本体部に対して階段状の段差を生じるような断面形状を有する請求項２に記載のエレクトロルミネッセンス素子の製造方法。   3. The method of manufacturing an electroluminescent element according to claim 2, wherein the opening edge portion of the mask has a cross-sectional shape that produces a stepped step with respect to the mask main body portion. 前記マスクの開口エッジ部は、前記マスク本体部に対して１段の段差を生じ、前記マスク本体部と前記開口エッジ部との板厚差ΔＴに対する前記開口エッジ部の幅Ｗの比率Ｗ／ΔＴが０．５〜１０である請求項３に記載のエレクトロルミネッセンス素子の製造方法。   The opening edge portion of the mask has one step with respect to the mask body portion, and the ratio W / ΔT of the width W of the opening edge portion to the plate thickness difference ΔT between the mask body portion and the opening edge portion. The method for producing an electroluminescent element according to claim 3, wherein is 0.5 to 10. 前記マスクの開口エッジ部は、エッジ先端部に向かうほどその板厚が薄くなる請求項２に記載のエレクトロルミネッセンス素子の製造方法。   3. The method of manufacturing an electroluminescent element according to claim 2, wherein the opening edge portion of the mask has a thinner plate thickness toward an edge tip portion. 前記マスクの開口エッジ部は、テーパー状の断面形状を有する請求項５に記載のエレクトロルミネッセンス素子の製造方法。   6. The method of manufacturing an electroluminescent element according to claim 5, wherein the opening edge portion of the mask has a tapered cross-sectional shape. 前記マスクの開口エッジ部は、前記基板とは反対の方向へ凸状に突出した断面形状を有する請求項５に記載のエレクトロルミネッセンス素子の製造方法。   6. The method of manufacturing an electroluminescence element according to claim 5, wherein the opening edge portion of the mask has a cross-sectional shape protruding in a convex shape in a direction opposite to the substrate. 前記マスクの開口エッジ部は、前記基板の方向へ凹状に窪んだ断面形状を有する請求項５に記載のエレクトロルミネッセンス素子の製造方法。   6. The method of manufacturing an electroluminescent element according to claim 5, wherein the opening edge portion of the mask has a cross-sectional shape that is recessed in the direction of the substrate. 前記マスクは、補強部材により支持された状態で用いられる請求項１〜８のいずれか一項に記載のエレクトロルミネッセンス素子の製造方法。   The said mask is a manufacturing method of the electroluminescent element as described in any one of Claims 1-8 used in the state supported by the reinforcement member. 前記補強部材は、前記マスク本体部に対応して配置されるリブを有する請求項９に記載のエレクトロルミネッセンス素子の製造方法。   The method of manufacturing an electroluminescent element according to claim 9, wherein the reinforcing member has a rib disposed corresponding to the mask main body.
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