JP2006049524A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To uniformly form a resin containing fluorescence having a predetermined thickness around a light emitting device. <P>SOLUTION: This method comprises the steps of forming a frame 150 which has an opening region 152 comprising an opening with the size of the light emitting device 110 coated with a phosphor beforehand, on the base on which the light emitting device 110 to be mounted so that the opening region 152 surrounds the location wherein the light emitting device 110 is to be disposed; mounting the light emitting device 110 at about the center of the opening region 152, so that a nearly uniform gap corresponding to the thickness of the phosphor film is formed between the light emitting device 110 and the opening region 152; and coating the light emitting device 110 with a cure composition containing the phosphor, by filling it into the gap formed between the light emitting device 110 and the opening region 152. Thus, the light emitting device 110 is accurately disposed at the center of the opening region 152 of the frame 150, and the light emitting device 110 can be coated with the phosphor of a nearly uniform thickness around it to reduce the unevenness of the light distribution and the chrominance from the light emitting device. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a light emitting device and a light emitting device.

  A light-emitting device using a semiconductor element as a light-emitting element emits light with a small color, high power efficiency, and vivid colors. In addition, a light emitting element which is a semiconductor element does not have a concern about a broken ball. Further, it has excellent initial driving characteristics and is strong against vibration and repeated on / off lighting. Because of such excellent characteristics, light-emitting devices using semiconductor light-emitting elements such as light-emitting diodes (LEDs) and laser diodes (LDs) are used as various light sources.

  In particular, a high-luminance blue light-emitting LED using a GaN-based compound semiconductor has been developed, and a white light-emitting device has been realized by utilizing the luminance. In this white light emitting device, a light emitting element that emits blue light is covered with a resin containing a fluorescent material that emits yellow green light to obtain white light.

  As a means for manufacturing such a light emitting device, it is necessary to coat the light emitting element with a wavelength conversion member. Potting means is known as a method for forming a film of a wavelength conversion member on a light emitting element (see, for example, Patent Document 1). FIG. 5 is a schematic process cross-sectional view showing a conventional film forming method using potting means. A light emitting device 300 using the potting means shown in FIG. 5 has a flip chip type light emitting element 310 mounted face-down in a cavity 311 having a predetermined shape. The top and side surfaces of the light emitting element 310 are covered with a film 312 containing a fluorescent material 316. The light emitting element 310 is electrically connected to the lead electrode 315. The lead electrode 315 is integrally formed with the cavity 311. In the light emitting device 300, the light emitting element 310 is mounted face-down on the lead electrode 315 in advance. A resin 313 is projected from the thin tube 314 on the upper surface of the light emitting element 310. When the protruding resin 314 almost completely covers the upper surface and side surfaces of the light emitting element 310, the charging is stopped and the resin 314 is cured. In this manner, the film 312 is formed on the upper surface and the side surface of the light emitting element 310.

  However, when the wavelength conversion member is coated by the potting as described above, there is a problem in that the fluorescent material is not uniformly coated around the light emitting element, resulting in uneven light distribution chromaticity. That is, as shown in FIG. 6, the wavelength conversion member 612 filled in the recess 611 has a different thickness between the upper surface and the side surface of the light emitting element 610, so that the light emitted from the light emitting element 610 is emitted to the outside. The amount of the fluorescent substance to be excited is also different, and as a result, a difference occurs in the degree of wavelength conversion. For example, in the case of a light emitting device that emits white light by mixing colors by combining a GaN-based LED chip that emits blue light as the light emitting element 610 and a YAG phosphor that converts blue light into yellow as the wavelength conversion member 612, Since the amount of the YAG phosphor on the upper surface is relatively small, the ratio of the blue light to which the wavelength is converted is reduced, and the light becomes slightly bluish white light. On the other hand, in the vicinity of the side surface of the light emitting element 610, since the amount of YAG phosphor is relatively larger than that of the upper surface, the ratio of wavelength conversion increases and the light becomes slightly yellowish white light. As a result, white light emitted from the light emitting device is not uniform, and becomes blue in the vicinity of the center of the light emitting element 610, and becomes yellowish in the periphery, resulting in uneven light distribution chromaticity. Such light distribution chromaticity unevenness causes a decrease in light emission quality when used as illumination. Therefore, a light emitting device that can suppress light distribution chromaticity unevenness and obtain uniform white light regardless of location. It has been demanded.

  In order to suppress such light distribution chromaticity unevenness, it is necessary to coat the wavelength conversion member 712 containing the fluorescent material 716 almost uniformly around the light emitting element 710 as shown in FIG. As a method for realizing such coating, screen printing as shown in FIG. 8 is known. In the light emitting device 400 shown in FIGS. 8A and 8B, the upper surface and side surfaces of the light emitting element 410 are covered with a film 412 containing a fluorescent material 417 by screen printing. First, as shown in FIG. 8A, the flip chip type light emitting element 410 is mounted face-down on the upper surface of the substrate 411. The light emitting element 410 is electrically connected to a lead electrode 415 provided on the substrate 411. Then, a metal metal mask 416 opened in a predetermined shape is placed on the substrate 411 so that the light emitting element 410 is positioned at the center of the opening region, and a resin 413 containing a fluorescent material 417 is placed in the opening region. Supply. In this state, the resin 413 is extended with a spatula 414 to form a coating 412 on the upper surface of the light emitting element 410. After the coating 412 is formed, the metal mask 416 is removed, whereby the coating 412 is formed on the upper surface and the side surface of the light emitting element 410 as shown in FIG.

  However, the screen printing method has a drawback that it is difficult to uniformly apply a fluorescent material to a large number of light emitting elements, and mass productivity is poor. In order to apply a fluorescent substance with high productivity, screen printing is performed by placing a metal mask with a large number of open areas according to the position of each light-emitting element in a state where many light-emitting elements are die-bonded on the same substrate. Will be done. Here, in general, the fluorescent material covering the periphery of the light emitting element is thin, for example, a film thickness of about 30 μm is formed. Therefore, as shown in FIG. 8A, when the opening area of the metal mask is arranged around the light emitting element, the opening center of the metal mask is set so that the distance between the light emitting element and the opening area of the metal mask is about 30 μm. Needs to be accurately aligned so that is substantially coincident with the center of the light emitting element. However, if a large number of light emitting elements are to be bonded on the same substrate with a die bonder or the like, an error in positional deviation during bonding occurs about ± 30 μm. As a result, if each of the plurality of light-emitting elements die-bonded on the substrate is aligned with the metal mask opening area by the method shown in FIG. 8, light is emitted from all the opening areas due to die bonding errors. It becomes very difficult to match the center with the element. That is, the light emitting element is not positioned at the center of the opening area due to an error in die bonding, the distance between the light emitting element and the opening area becomes non-uniform, and the film thickness of the fluorescent material cannot be made constant for each light emitting element. There is a problem that decreases. In order to avoid this, it is necessary to perform screen printing by setting individual masks for each light emitting element instead of arranging metal masks on a large number of light emitting elements at the same time. there were.

  On the other hand, as a technique for forming a translucent resin containing a fluorescent agent with a desired film thickness around a light emitting element, a surface-mounted LED described in Patent Document 2 has been developed. As shown in FIG. 9, the LED includes an LED chip 910 arranged on a substrate 911, a chip sealing portion 915a for sealing the LED chip 910, and a groove 915b around the chip sealing portion 915a. A first light-transmitting resin layer 915 having a chip sealing portion surrounding portion 915c provided with a height higher than that of the chip sealing portion 915a, and a fluorescent agent, the chip sealing portion surrounding portion 915c 2nd translucent resin layer 916 formed inside. Accordingly, the shape of the second light transmissive resin layer 916 is determined by the shape of the first light transmissive resin layer 915, and thus the thickness of the second light transmissive resin layer 916 can be made uniform.

  However, in this method, since the resin layer is formed in two steps around the light emitting element, there is a problem in that the number of manufacturing steps is increased and it takes time and cost. That is, once a mold for filling the first translucent resin is arranged, and after pouring the resin, this is cured, and further, the second translucent resin is poured and cured. The process inevitably increases. Further, as shown in FIG. 9, a gap where the fluorescent agent is not arranged is formed on the side surface of the light emitting element. Therefore, the light of the light emitting element leaking from the gap is not wavelength-converted, and the color of the output light of the light emitting device depends on the emission observation direction. There is a difference in degrees. Further, from the viewpoint of conversion efficiency, the distance between the light emitting element and the fluorescent material is preferably as short as possible. However, in the configuration of FIG. 9, another resin is interposed between the light emitting element and the fluorescent material. There was also a problem that the conversion efficiency deteriorated due to separation.

In addition, in face-up mounting in which electrodes are exposed on the upper surface of the light-emitting element, since the phosphor layer is applied after bonding, there is a problem that the bonded wire or the like becomes an obstacle when screen printing is used. In addition, as a result of the phosphor layer coming into contact with the connecting portion of the wire, there is a risk that reliability may be impaired such as a decrease in conductivity.
JP 2002-134792 A JP 2002-252376 A

  The present invention has been made to solve such problems. A main object of the present invention is to provide a method of manufacturing a light-emitting device and a light-emitting device in which a change in light distribution chromaticity is reduced by coating a fluorescent material with a constant film thickness around the light-emitting element with a simple configuration. There is.

  In order to achieve the above object, a method for manufacturing a light emitting device of the present invention includes a light emitting element and a fluorescent material disposed around the light emitting element so as to convert a part of light emitted from the light emitting element into a different wavelength. A method of manufacturing a light-emitting device, wherein a frame body in which an opening region is formed in a size that is preliminarily coated with a fluorescent material is disposed on a pedestal on which the light-emitting element is placed. A step of forming the power position so as to be surrounded by the opening region, and a light emitting element substantially at the center of the opening region so that a substantially constant gap corresponding to the film thickness of the fluorescent material is formed between the light emitting element and the opening region. And a step of covering the light emitting device by filling a curable composition containing a fluorescent material into a gap formed between the light emitting device and the opening region. Accordingly, the light emitting element can be accurately arranged at the center of the opening region of the frame body, and the fluorescent material can be coated around the light emitting element with a substantially uniform thickness, and unevenness in light distribution chromaticity of the light emitting device can be reduced.

  In addition, according to another method of manufacturing a light emitting device of the present invention, the opening region formed in the frame has an opening region that divides the side surface of the light emitting element and the periphery thereof when the light emitting element is disposed at substantially the center of the opening region. The distance between the side wall and the distance between the upper surface of the light emitting element and the planar portion of the upper surface of the frame is set to be substantially equal. With this configuration, it is possible to configure the fluorescent material covering the light emitting element so that the fluorescent material covering the side surface of the light emitting element and the fluorescent material covering the top surface of the light emitting element are substantially equal. Uniform output light with reduced unevenness can be obtained.

  Furthermore, in another method for manufacturing a light emitting device of the present invention, the frame body is made of a translucent resin. Thereby, it is possible to extract light from the light emitting device without removing the frame after filling with the curable composition, and the manufacturing process can be simplified.

  Furthermore, in another method for manufacturing a light emitting device of the present invention, the frame has a plurality of opening regions formed on the same plane at a predetermined interval. Thereby, a large number of light-emitting elements can be arranged side by side, and the frame can be disposed at the same time, so that the curable composition can be coated with high productivity.

  Furthermore, in another method of manufacturing a light emitting device according to the present invention, after the step of coating the light emitting element with a fluorescent material, the frame and the base are cut around the opening area of the frame to separate each light emitting element. Dividing. Accordingly, the light emitting device can be configured by dividing the light emitting elements without removing the frame, and the manufacturing process can be simplified and the light emitting device can be manufactured at low cost.

  Furthermore, in another method for manufacturing a light emitting device of the present invention, after the step of covering the light emitting element with a fluorescent material, the frame is removed, and the base is cut around the position where the opening area of the frame exists. And dividing each individual light emitting element. Thereby, it is possible to realize a light emitting device in which the frame body is removed and the light extraction efficiency is further increased.

  In addition, the light-emitting device of the present invention is different from a flip-chip type light-emitting element, a pedestal including a lead electrode electrically connected to the light-emitting element in a state where the light-emitting element is mounted, and a part of light emission from the light-emitting element. A wavelength conversion member that contains a fluorescent substance that converts to a wavelength and is disposed at a substantially constant thickness around the light-emitting element, and a transparent member that is disposed around the side surface of the wavelength conversion member to fill the wavelength conversion member. A wavelength conversion member having a substantially uniform gap between the light emitting element and the side wall of the opening region partitioning the periphery thereof, and a top surface of the light emitting element. The coated wavelength conversion members have substantially the same thickness. Accordingly, the light emitting element can be accurately arranged at the center of the frame body, and the fluorescent material can be coated on the periphery of the light emitting element with a substantially uniform thickness.

  According to the light emitting device manufacturing method and the light emitting device of the present invention, the metal mask or the like is not disposed on the light emitting element mounted on the pedestal, but the frame body is first disposed on the pedestal, and then the opening area of the frame body By adopting the method of mounting the light emitting element on the surface, it is possible to increase the mounting accuracy so that the light emitting element is positioned at the center of the opening area of the frame, More accurate control is possible, and the manufacturing method of the light emitting device suitable for mass productivity can be realized by improving the product yield. This makes it easy to improve die bonding accuracy, so that the resin film thickness can be accurately controlled. As a result, the phosphor-containing resin with a uniform film thickness is coated around the light-emitting element, resulting in extremely high accuracy. A quality light emitting device can be obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a light emitting device manufacturing method and a light emitting device for embodying the technical idea of the present invention, and the present invention describes the light emitting device manufacturing method and the light emitting device below. Not specific to anything. Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present invention unless otherwise specified, but are merely described. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing.
(Light emitting device)

FIG. 1 is a schematic cross-sectional view of a light emitting device 100 according to an embodiment. The light-emitting device 100 shown in this figure is contained in the light-emitting element 110 mounted on the upper surface of the pedestal 101 having the lead electrode 102, the fluorescent-containing resin 120 covering the periphery of the light-emitting element 110, and the fluorescent-containing resin 120. A fluorescent material 140 is provided. The light-emitting element 110 is a flip chip or face-down type, and has an electrode 113 on a surface connected to the base 101. The pedestal 101 has a lead electrode 102 having a predetermined conductive pattern. One end of the lead electrode 102 is disposed so as to be electrically connected to the external electrode, and the other end of the lead electrode 102 is disposed so as to be electrically connected to the electrode 113 of the light emitting element 110. The electrode 113 of the light emitting element 110 and the lead electrode 102 are electrically connected via a bump 103 or the like. In addition, the periphery of the light emitting element 110 is covered with a fluorescent-containing resin 120 containing the fluorescent substance 140 so that the fluorescent substance 140 is disposed around the light emitting element 110. The fluorescent-containing resin 120 is formed substantially uniformly around the light emitting element 110. The fluorescent-containing resin 120 also has a role of releasing heat generated in the light emitting element 110 to the outside through the pedestal 101 and the like. Hereinafter, each member will be described in detail.
(Light emitting element 110)

  An outline of the light emitting element 110 is shown in FIGS. 2 is a plan view of the light-emitting element 110, and FIG. 3 is a cross-sectional view taken along line III-III 'of FIG. The light emitting element 110 includes a material such as a GaN-based material, an AlGaN-based material, an InGaN-based material, an InAlGaN-based material, BN, or SiC, and can emit light from an ultraviolet region to a visible light region. In particular, it is preferable to use a light emitting element having a light emission peak wavelength in the vicinity of 350 nm to 550 nm and to have a light emitting layer capable of emitting light having a light emission wavelength capable of efficiently exciting the fluorescent material 140. Here, a nitride semiconductor light emitting element will be described as an example of the light emitting element 110, but is not limited thereto. As shown in FIG. 3, the nitride semiconductor light emitting device 110 has a semiconductor layer 112 formed by sequentially laminating an n-type layer, an active layer, and a p-type layer made of a nitride semiconductor on a sapphire substrate 111, The n-side electrode is formed on n-type semiconductors that are separated from each other and exposed in a line shape, and the p-side electrode is constituted by a p-ohmic electrode and a plurality of p-pad electrodes formed on the p-ohmic electrode. Has been.

  More specifically, in the nitride semiconductor light emitting device, in the stacked body including the n-type layer, the active layer, and the p-type layer, as shown in FIG. 2A, a part of the p-type layer and the active layer are formed in a line shape. By removing the plurality of grooves, the n-type semiconductor layer 114 is exposed in a line shape. Furthermore, n pad electrodes 115 are formed on the exposed n-type semiconductor layer 114 as shown in FIG. On the other hand, the p-side electrode is composed of a translucent p-ohmic electrode formed on almost the entire surface of the p-type semiconductor layer 116 and a plurality of p-pad electrodes 117 formed on the p-ohmic electrode.

  The nitride semiconductor light emitting device having the above-described electrode configuration improves the light emission efficiency by injecting a current into the entire light emitting region for the following reasons, and has a relatively large area (for example, 1000 μm × 1000 μm). Also in the nitride semiconductor light emitting device, uniform light emission is possible over the entire light emitting surface.

The light-emitting element 110 has a structure in which an n-type semiconductor layer and a p-type semiconductor layer containing gallium nitride as main components are stacked on a light-transmitting substrate such as a sapphire substrate or a silicon substrate, and is formed in each semiconductor layer. The n pad electrode 115 and the p pad electrode 117 thus formed are electrically connected to the lead electrode 102 provided on the base 101 through bumps. In order to prevent the air from remaining in the gap portion other than the portion where the light emitting element 110 and the lead electrode 102 are electrically connected, and to prevent a short circuit between the p pad electrode 115 and the n pad electrode 117, the fluorescence The containing resin 120 can also be filled. The bonding between the pad electrodes 115 and 117 and the lead electrode 102 is performed by ultrasonic bonding of solder, gold bumps between the conductive pattern and the pad electrode, conductive paste such as gold, silver, palladium, rhodium or the like. A conductive paste or the like can be used.
(Pedestal 101)

  The pedestal 101 mounts the light emitting element 110 and is electrically connected thereto. A lead electrode 102 having a predetermined shape is formed on the pedestal 101. The lead electrode 102 has a connected portion that is electrically connected to the light emitting element 110 and a portion that is electrically connected to the external electrode. From the viewpoint of preventing corrosion, it is preferable that only these two parts are exposed on the pedestal 101, but parts other than both parts may be exposed in order to improve the light reflection efficiency. The pedestal 101 is provided with a lead electrode 102 at a position where it is electrically connected to the light emitting element 110 and facing the n pad electrode 115 and the p pad electrode 117 of the light emitting element 110. On the other hand, the part electrically connected to the external electrode is connected by wire bonding using a wire. As a result, the light emitting element 110 is electrically connected to the external electrode via the lead electrode 102. The pedestal 101 is formed of a glass epoxy laminated substrate, a liquid crystal polymer substrate, a polyimide resin substrate, a ceramic substrate, or the like.

  The lead electrode 102 can also have a predetermined conductive pattern. For the conductive pattern, a good electrical conductor such as copper, phosphor bronze, iron or nickel can be used. Furthermore, noble metal plating such as silver, gold, palladium, and rhodium can be applied to the surface of the conductive pattern. Further, as means for electrically connecting the light emitting element 110 and the lead electrode 102, means via the bump 103 can be used.

Although not shown, the light emitting element can be mounted on the submount substrate instead of being directly mounted on the pedestal, and can be mounted on the pedestal via the submount substrate. Further, the pedestal can be a submount substrate. When the pedestal is a submount substrate, a lead electrode not covered with a fluorescent-containing resin can be used as an external terminal. Further, the submount substrate may be a wafer-like plate material. Alternatively, the pedestal itself may be a mounting substrate. Furthermore, the lead electrode of the base and the light emitting element can be electrically connected by wire bonding.
(Fluorescent resin)

  The fluorescence-containing resin 120 constitutes a wavelength conversion layer in which the fluorescent material 140 is mixed as a wavelength conversion member. In addition, the wavelength conversion member before hardening is equivalent to the curable composition in a claim. A thermosetting resin can be used for the curable composition. The fluorescent material 140 is preferably mixed in the fluorescent-containing resin 120 at a substantially uniform ratio. However, it can also mix | blend so that a fluorescent material may be unevenly distributed. For example, the fluorescent material 140 is unevenly distributed on the outer surface side of the fluorescent-containing resin 120 and separated from the contact surface between the light-emitting element 110 and the fluorescent-containing resin 120, so that the heat generated in the light-emitting element 110 is converted into the fluorescent material 140. The deterioration of the fluorescent material 140 can be suppressed by making it difficult to transmit to the light source. The fluorescent-containing resin 120 is preferably a silicone resin composition, a modified silicone resin composition, or the like, but an insulating resin composition having translucency such as an epoxy resin composition, a modified epoxy resin composition, or an acrylic resin composition. Things can also be used. In addition, a pigment, a diffusing agent, and the like can be mixed in the fluorescent-containing resin 120.

  The fluorescent-containing resin 120 is preferably soft even after being cured. Before curing, the fluorescence-containing resin 120 is spread around the light-emitting element 110, and the fluorescence-containing resin 120 is infiltrated into a gap portion other than the portion where the light-emitting element 110 and the lead electrode 102 are electrically connected. A liquid having a low viscosity is preferred. Moreover, it is preferable that the fluorescence containing resin 120 has adhesiveness. By providing the fluorescence-containing resin 120 with adhesiveness, the adhesion between the light emitting element 110 and the pedestal 101 can be enhanced. The adhesiveness includes not only those exhibiting adhesiveness at room temperature but also those that are bonded to the fluorescent resin 120 by applying predetermined heat and pressure. In addition, the fluorescent resin 120 can be applied with temperature or pressure or dried to increase the fixing strength.

  The fluorescent material 140 is a wavelength conversion member that absorbs light from the light emitting element 110 and converts the light into light of different wavelengths. For example, nitride phosphors / oxynitride phosphors mainly activated by lanthanoid elements such as Eu and Ce, lanthanoid phosphors such as Eu, and alkalis mainly activated by transition metal elements such as Mn Earth halogen apatite phosphor, alkaline earth metal borate halogen phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicate, alkaline earth sulfide, alkaline earth thiogallate, alkaline earth silicon nitride At least selected from organic and organic complexes mainly activated by rare earth aluminates, rare earth silicates, or lanthanoid elements such as Eu, which are mainly activated by lanthanoid elements such as germanate or Ce Any one or more are preferable. As specific examples, the following phosphors can be used, but are not limited thereto.

A nitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is M ₂ Si ₅ N ₈ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn). There is.) In addition to M ₂ Si ₅ N ₈ : Eu, MSi ₇ N ₁₀ : Eu, M _1.8 Si ₅ O _0.2 N ₈ : Eu, M _0.9 Si ₇ O _0.1 N ₁₀ : Eu ( M is at least one selected from Sr, Ca, Ba, Mg, and Zn. On the other hand, an oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is MSi ₂ O ₂ N ₂ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, and Zn). More than seeds).

In addition, alkaline earth halogen apatite phosphors mainly activated by lanthanoid-based elements such as Eu and transition metal-based elements such as Mn include M ₅ (PO ₄ ) ₃ X: R (M is Sr, Ca, Ba). X is at least one selected from F, Cl, Br and I. R is any one of Eu, Mn, Eu and Mn. Etc.)

Further, the alkaline earth metal borate phosphor has M ₂ B ₅ O ₉ X: R (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is F, And at least one selected from Cl, Br, and I. R is Eu, Mn, or any one of Eu and Mn.).

Alkaline earth metal aluminate phosphors include SrAl ₂ O ₄ : R, Sr ₄ Al ₁₄ O ₂₅ : R, CaAl ₂ O ₄ : R, BaMg ₂ Al ₁₆ O ₂₇ : R, BaMg ₂ Al ₁₆ O ₁₂ : R, BaMgAl ₁₀ O ₁₇ : R (R is Eu, Mn, or any one of Eu and Mn).

Examples of alkaline earth sulfide phosphors include La ₂ O ₂ S: Eu, Y ₂ O ₂ S: Eu, and Gd ₂ O ₂ S: Eu.

Examples of rare earth aluminate phosphors mainly activated with lanthanoid elements such as Ce include Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ There are YAG phosphors represented by the composition formula of (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ .

Other phosphors include ZnS: Eu, Zn ₂ GeO ₄ : Mn, MGa ₂ S ₄ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is And at least one selected from F, Cl, Br, and I.).

  The phosphor described above contains at least one selected from Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, Ti instead of Eu or in addition to Eu as desired. You can also.

  Moreover, it is fluorescent substance other than the said fluorescent substance, Comprising: The fluorescent substance which has the same performance and effect can also be used.

  These fluorescent materials can use phosphors having emission spectra in yellow, red, green, and blue by the excitation light of the light emitting element 110, and can also be used in yellow, green, blue green, orange, etc., which are intermediate colors thereof. A phosphor having an emission spectrum can also be used. By using these phosphors in various combinations, light emitting devices having various emission colors can be manufactured.

For example, using a GaN-based compound semiconductor that emits blue light, a Y ₃ Al ₅ O ₁₂ : Ce or (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce fluorescent material is irradiated to convert the wavelength. Do. A light-emitting device that emits white light with a mixed color of light from the light-emitting element 110 and light from the fluorescent material 140 can be provided.

Alternatively, CaSi ₂ O ₂ N ₂ : Eu, which emits light from green to yellow, or SrSi ₂ O ₂ N ₂ : Eu, and (Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu, which emits blue light as a phosphor. By using the fluorescent material 140 that contains (Ca, Sr) ₂ Si ₅ N ₈ : Eu that emits red light, a light emitting device that emits white light with good color rendering can be provided. This uses the three primary colors of red, blue, and green, so the desired white light can be achieved simply by changing the blend ratio of the first phosphor and the second phosphor. Can do.

  The particle size of the fluorescent material 140 is preferably in the range of 1 μm to 20 μm, more preferably 2 μm to 8 μm, and particularly preferably in the range of 5 μm to 8 μm. A phosphor having a particle size smaller than 2 μm tends to form an aggregate. On the other hand, a phosphor having a particle size range of 5 μm to 8 μm has a high light absorption rate and conversion efficiency. In this manner, the mass productivity of the light-emitting device is improved by including a phosphor having a large particle diameter and having optically excellent characteristics.

Here, the particle size refers to the average particle size obtained by the air permeation method. Specifically, in an environment with an air temperature of 25 ° C. and a humidity of 70%, a sample of 1 cm ³ is weighed and packed in a special tubular container. The value is converted into an average particle diameter. The average particle size of the phosphor used in the present invention is preferably in the range of 2 μm to 8 μm, and it is preferable that the phosphor having this average particle size value is contained frequently. Further, the particle size distribution is preferably distributed in a narrow range, and it is particularly preferable that the number of fine particles having a particle size of 2 μm or less is small. In this way, by using a phosphor having a small variation in particle size and particle size distribution, color unevenness is further suppressed and a light emitting device having a good color tone can be obtained.
(Diffusion agent)

  Furthermore, in addition to the fluorescent material 140, a diffusing agent may be included in the fluorescent-containing resin 120. As a specific diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide or the like is preferably used. As a result, a light emitting device having good directivity can be obtained.

Here, in this specification, the diffusing agent refers to those having a center particle diameter of 1 nm or more and less than 5 μm. A diffusing agent having a size of 1 μm or more and less than 5 μm can be suitably used because it can diffuse irregularly the light from the light emitting element 110 and the fluorescent material 140 and suppress color unevenness that tends to occur by using a fluorescent material having a large particle size. it can. In addition, the half width of the emission spectrum can be narrowed, and a light emitting device with high color purity can be obtained. On the other hand, a diffusing agent having a wavelength of 1 nm or more and less than 1 μm has a low interference effect with respect to the light wavelength from the light emitting element 110, but has high transparency and can increase the resin viscosity without reducing the light intensity.
(Filler)

Further, a filler may be contained in the fluorescent-containing resin 120 in addition to the fluorescent substance 140. As a specific material, the same material as the diffusing agent can be used. However, the center particle size of the diffusing agent and the filler are different, and in this specification, the center particle size of the filler is preferably 5 μm or more and 100 μm or less. When the filler having such a particle size is contained in the translucent resin, the chromaticity variation of the light emitting device is improved by the light scattering action, and the thermal shock resistance of the translucent resin can be enhanced. As a result, a highly reliable light-emitting device that can prevent disconnection of the wire that electrically connects the light-emitting element and the external electrode, separation of the bottom surface of the light-emitting element and the bottom surface of the recess of the package, even when used at high temperatures. And can. Furthermore, the fluidity of the resin can be adjusted to be constant for a long time, and a sealing member can be formed in a desired location, enabling mass production with a high yield.
(Film thickness)

As shown in FIG. 7, the film thickness of the fluorescent-containing resin covering the periphery of the light emitting element is made uniform at each position on the upper surface and the side surface. By setting the upper surface and the side surface of the light emitting element to have a constant thickness, the directivity can be improved. Further, by making the film thickness of the side surface and the film thickness of the upper surface substantially equal, it is possible to obtain high-quality light emission with further reduced light distribution chromaticity unevenness. Further, by coating the fluorescent-containing resin thinly as shown in FIGS. 6 to 7, the density of the fluorescent substance can be increased, the non-uniform distribution due to the sedimentation of the fluorescent substance can be reduced, and the effect of more uniform light emission can be obtained. . The film thickness of the fluorescent resin 120 is determined by the gap between the opening region 152 opened in the frame and the light emitting element 110 as described later. The film thickness is preferably 10 to 50 μm, more preferably 20 to 40 μm, and most preferably about 30 μm. However, the film thickness is not particularly limited, and a very thin film or a thick film can be used.
(Frame)

  Further, in the light emitting device 100, in order to form the fluorescent resin 120 with a uniform film thickness around the light emitting element 110, a frame 150 is formed on a pedestal before mounting the light emitting element 110, here on a wafer. The frame 150 constitutes a mold or cavity for forming the fluorescent-containing resin 120 around the light emitting element 110. FIG. 4 illustrates an example in which the fluorescent resin 120 is formed around the light emitting element 110 using the frame 150. A frame 150 shown in this figure is molded into a flat plate shape having substantially the same outer shape as the base, and forms an opening region 152. The frame 150 is molded by transfer molding or the like. The transfer mold is a process in which a thermosetting material such as a non-flame retardant epoxy resin is molded by transferring it from a heating pot into a closed mold cavity. The frame 150 is preferably formed of a member having translucency. The translucent frame 150 can be taken out without blocking the light of the phosphor without removing the frame 150 after the formation of the fluorescence-containing resin 120. For this reason, the frame 150 can use a translucent silicone resin or epoxy resin. However, the frame body may be removed after the formation of the fluorescence-containing resin, and in this case, the frame body does not need to have translucency.

  In the example of FIG. 4, the frame body is directly formed on the pedestal. However, the frame body may be formed as a separate member, and the frame body may be arranged on the pedestal. In this case, the molding of the frame is not limited to the transfer mold, and can be molded by a casting method, an extrusion molding method, a press processing method, or the like. Furthermore, in this case, the present invention is not limited to an example in which one frame is used for one pedestal, and a plurality of frames are set on one pedestal, or one frame is placed on one pedestal. It can also be moved by using.

  The opening region 152 formed in the frame 150 is opened at a position where the light emitting element 110 is mounted on the pedestal. Therefore, the frame 150 is smaller than the pedestal on which the light emitting element 110 is mounted and larger than the light emitting element 110. The opening region 152 is formed in accordance with a pattern in which the light emitting element 110 is arranged on the pedestal with a die bonder or the like. In the example of FIG. 4B, a plurality of opening regions 152 are formed at a predetermined interval on the same plane, and are open in a grid pattern. However, the arrangement pattern of the opening regions can be a desired pattern such as an offset zigzag pattern or a mesh pattern.

  Further, the size of the opening region 152 is slightly larger than that of the light emitting element 110, and is the size in which the fluorescent-containing resin 120 is formed on the light emitting element 110. Accordingly, if the light emitting element 110 is arranged in the center of the opening region 152, the fluorescent-containing resin 120 can be injected into the gap between the light emitting element 110 and the opening region 152 to form a uniform film thickness. In the conventional method of coating the phosphor-containing resin by screen printing or the like, a metal mask or the like is arranged with the light emitting element mounted on a pedestal, and the light emitting element is positioned at the center of the pattern opened in the metal mask. There was a need to do. In this method, the opening pattern of the metal mask does not match the light emitting element due to an error such as a die bonder when mounting the light emitting element on the pedestal, and the same film for all the light emitting elements mounted on one pedestal. It was extremely difficult to position the metal mask so as to be thick. In particular, since the die bonder used for mounting the light emitting element has an accuracy of about ± 25 to 50 μm, when the thickness of the fluorescent-containing resin is set to about 10 to 50 μm, the influence of the error becomes extremely large. A different mounting error may occur for each bonded light emitting element, and the light emitting element may not enter a predetermined position in a hole of a metal mask prepared in advance. Furthermore, if the phosphor-containing resin is filled in the hole of the metal mask in a state where such a mounting error has occurred, the phosphor layer cannot be formed with a constant film thickness for each light emitting element, and the yield decreases. Was.

  On the other hand, in the present invention, rather than positioning the opening area of the metal mask and the light emitting element in the state where the light emitting element is first mounted, the opening area is set in a state where the frame is fixed on the pedestal first. The procedure for mounting the light-emitting element in a state determined on the pedestal was adopted. As a result, the position where the light emitting element is mounted in each opening region can be adjusted to an optimum position. Therefore, the gap between the opening region and the light emitting element is made constant, and the film thickness of the fluorescent-containing resin filled therein is set. It becomes possible to control to be constant. In particular, when die bonding is performed in a state in which the opening area is specified, accurate positioning can be performed by image processing or the like, and thus the light emitting element can be positioned almost at the center of the opening area. In other words, when die bonding is performed uniformly, variations in the position of each light emitting element are inevitable, but accurate die bonding is possible by adjusting the reference position of each light emitting element for each opening area. Thus, the light emitting element is accurately arranged in the center of each opening region, and the thickness of the light emitting element and the opening region can be made uniform while keeping the gap between the light emitting element and the opening region constant.

  The opening area 152 of the frame 150 is formed according to the size and shape of the light emitting element 110 covered with the fluorescent resin 120. Further, the dimension is determined by the thickness of the fluorescent resin 120 to be coated in addition to the light emitting element 110. As shown in FIG. 4, it is designed to have a size obtained by adding the thickness of the fluorescent-containing resin 120 to the outer dimensions and thickness of the light emitting element 110 to be used. For example, when the light emitting element 110 is disposed substantially at the center of the opening region 152, the distance between the front, rear, left and right side surfaces of the light emitting element 110 and each side wall of the opening region 152 surrounding the periphery thereof is made substantially equal. The distance between the upper surface of the light emitting element 110 and the plane of the upper surface of the frame 150 is set to be substantially equal. Accordingly, as shown in FIG. 4D, the film thickness of the upper surface of the light emitting element 110 and the film thickness of the side surfaces thereof are filled with the curable composition that is the fluorescence-containing resin 120 before curing up to the plane of the frame 150. As a result, the light distribution chromaticity unevenness of the light emitted from the light emitting element 110 is suppressed and uniform light can be obtained.

  By using the frame 150 for forming the fluorescent-containing resin 120, it becomes easy to form the fluorescent-containing resin 120 with a uniform film thickness. In particular, when the frame 150 is molded by a mold such as a mold, the precision of the mold can be made relatively high, so that the film thickness can be controlled more accurately. If a wavelength conversion layer containing a wavelength conversion member that converts the wavelength of light emitted from the light emitting element 110 is uniformly formed, the fluorescent material contained in the fluorescent resin 120 and positioned between the frame 150 and the light emitting element 110 140, the wavelength of light emitted from the top and side surfaces of the light emitting device 110 is uniformly wavelength-converted or transmitted, and the distribution of the fluorescent material is uniform, so that the wavelength conversion efficiency is uniform and the wavelength is converted. The mixed light with the emitted light and the luminescent color from the light emitting element 110 is emitted without color unevenness, and high-quality light emission excellent in the color mixing property and orientation characteristics can be realized. In particular, since not only the upper side of the light emitting element 110 but also the sides are covered with the fluorescent resin 120, uneven color tone between the emitted light from the upper surface and the emitted light from the side surface of the light emitting element 110 is reduced.

  However, in the present invention, it is not always necessary to make the film thickness equal between the side surface and the upper surface of the light emitting element, and this can be set to a different value. For example, the distance between the upper surface of the light emitting element and the upper surface of the frame body and the distance between the side surface of the light emitting element and the side wall of the frame body are changed, and the amount of the fluorescent material is changed according to the light amount from the upper surface of the light emitting element and the light amount from the side surface. By doing so, the amount of light can be adjusted.

Moreover, it is preferable to use a thermosetting resin for the fluorescent-containing resin 120. The heating temperature is appropriately changed depending on the curing temperature of the fluorescence-containing resin 120, but is preferably 70 ° C or higher and 130 ° C or lower. This is because it is necessary to cure the fluorescence-containing resin 120 at a temperature equal to or lower than the service temperature of the light emitting element 110.
(Method for manufacturing light emitting device)

Next, based on FIG. 4, the manufacturing process of the light-emitting device 100 which concerns on embodiment of this invention is demonstrated. First, the frame 150 is formed on the upper surface of the pedestal shown in FIG. 4A as shown in FIG. The pedestal is formed with lead electrodes 102 in advance. The lead electrode 102 has a predetermined orientation pattern, and is wired on the upper surface or inside of the pedestal 101. The lead electrode 102 is preferably formed with an alignment pattern so as to face the electrode 113 of the light emitting element 110. One end of the lead electrode 102 is exposed from the upper surface or the lower surface of the base 101 and is formed so as to be electrically connected to the external electrode. The other end of the lead electrode 102 is exposed at a portion where the light emitting element 110 is placed. On the other hand, the frame 150 is formed by holding the upper and lower surfaces of the pedestal with a mold (not shown) by transfer molding and injecting a translucent resin. At this time, unevenness is formed in advance on the mold so that the opening region 152 is formed in the frame 150 in a predetermined pattern. The mold accuracy of the mold can be manufactured with high accuracy of ± 2 μm tolerance.
(Light emitting element positioning)

  Next, as shown in FIG. 4C, the light-emitting elements 110 manufactured in advance are placed in the respective opening regions 152. Here, the light emitting element 110 is die-bonded to the center of the opening region 152 using a die bonder. The die bonder picks up a chip (die, dice) of the light emitting element 110 diced from another wafer, and attaches the light emitting element 110 to the pedestal lead electrode 102 in an electrically connected state via a bump. In the positioning of the die bond, as shown in FIG. 4C, the light emitting element 110 is accommodated in the opening region 152 and the distance from the side wall forming the opening region 152 around the light emitting element 110 is constant. That is, the light emitting element 110 is positioned so as to be disposed at the center of the opening region 152. In this example, an opening region 152 is formed around the light emitting element 110 having a substantially rectangular parallelepiped shape so as to open with a size that is one size larger than a substantially rectangular parallelepiped shape. The die bonder takes an image with a camera for each opening area 152 where the light emitting element 110 is mounted, and performs positioning so that the light emitting element 110 is accurately positioned at the center of the opening area 152 by image processing. With this method, since individual positioning can be performed for each opening region, the position of the die bond can be adjusted even if the position of the frame 150 is slightly shifted. That is, by placing the chip after placing the frame 150 first to determine the opening region 152, fine adjustment is possible, thereby improving the positioning accuracy of the mounting, and thus the uniform fluorescent substance. Application can be realized.

The bump 103 is conductive and can be made of a softer material than the lead electrode 102 and the electrode 113, such as solder. Accordingly, the electrode 113 of the light emitting element 110 and the lead electrode 102 are electrically connected via the bump 103. The upper surface of the substrate surface of the light emitting element 110 is preferably arranged so as to be substantially parallel to the pedestal 101. This is to prevent the fluorescence-containing resin 120 from flowing out when potting the fluorescence-containing resin 120 in the next step, and to maintain the orientation chromaticity of the light emitting device 100 in a predetermined state.
(Application of fluorescent-containing resin)

Next, a fluorescent-containing resin 120 in which a fluorescent substance is uniformly contained in advance is prepared, and this fluorescent-containing resin 120 is supplied from above the light emitting element 110 mounted in each opening region 152 as shown in FIG. To do. The fluorescence-containing resin 120 is in a paste form and is adjusted to have a viscosity that can enter the gap between the light emitting element 110 and the pedestal. Further, in order to ensure the penetration of the fluorescence-containing resin 120 into the gap, the fluorescence-containing resin 120 can be filled under reduced pressure or in a vacuum state. As means for placing the fluorescent-containing resin 120 on the upper surface of the light emitting element 110, potting, screen printing, spray spraying means, or the like can be used. According to screen printing, the fluorescence-containing resin 120 overflowing from the voids can be extruded and smoothed using a spatula or rod-like squeegee. The amount on which the fluorescent-containing resin 120 is placed is equal to or slightly larger than the volume surrounded by the base 101 and the frame 150 facing the light emitting element 110. By mixing the fluorescent material 140 almost uniformly in advance with the fluorescent-containing resin 120, color unevenness of light emitted from the light emitting device 100 can be prevented. In addition to the fluorescent material 140, a diffusing agent, a filler, or the like can be uniformly mixed with the fluorescent-containing resin 120 as necessary. Further, the viscosity of the fluorescent-containing resin 120 may be adjusted so that the fluorescent-containing resin 120 is held on the upper surface of the light-emitting element 110 due to surface tension and does not flow out. . Further, if bubbles remain in the fluorescent-containing resin 120, the light extraction efficiency decreases and color variation occurs. Therefore, the fluorescent-containing resin does not leave air in the gap between the light emitting element 110 and the opening region 152. 120 is injected.
(Curing of fluorescent resin)

  Further, the phosphor-containing resin 120 that is a thermosetting resin is thermally cured by heating in the state of FIG. By curing the fluorescence-containing resin 120, the interface between the frame 150 and the fluorescence-containing resin 120, the interface between the fluorescence-containing resin 120 and the light emitting element 110, and the interface between the fluorescence-containing resin 120 and the pedestal 101 can be bonded. Peeling is prevented. In addition, the fluorescent material 140 contained in the fluorescent resin 120 is held in a uniformly mixed state.

  Curing of the fluorescence-containing resin 120 is performed by inserting the base 101 on which the frame 150 is set into a predetermined heating device. Alternatively, the pedestal can be sealed in a laminate or bag and immersed in a solution such as water to apply pressure to the frame and the like to heat the solution to cure the fluorescent resin. As a result, it is possible to form a dense portion of the fluorescent substance in the fluorescent-containing resin, and the effect of reducing the color unevenness by reducing the light directly emitted from the light-emitting element without being wavelength-converted can be expected. In this specification, the term “curing” includes not only complete curing but also curing in a gel form.

The temperature at which the fluorescent-containing resin 120 is cured and the heating time thereof are determined according to the type and application amount of the thermosetting resin to be used, and are set to a temperature and time at which the fluorescent-containing resin 120 can be sufficiently cured. For example, when the fluorescent-containing resin 120 is a silicone resin, it is cured by heating at about 100 ° C. for about 1 hour. As a result, it was confirmed that a uniform phosphor layer of about 30 μm was formed around the light emitting element 110 in the silicone resin layer containing the phosphor.
(Light-emitting device chip)

  Then, after the fluorescent-containing resin 120 is cured, the pedestal is cut at the position of the frame 150 while leaving the frame 150 as shown in FIG. 100. The cutting is diced using a dicer or the like and cut into a desired shape. In the example of FIG. 4 (e), a hexagonal shape is cut out. However, the shape is not limited to this shape, and may be a polygonal shape such as a rectangular shape, a triangular shape, or a pentagonal shape, a circular shape, or an elliptical shape.

  In FIG. 4E, the frame 150 is cut at the time of chip formation, and the light emitting device 100 has a shape in which a part of the frame 150 remains as shown in FIG. By using the frame 150 as a transparent member as described above, a high-output light-emitting device can be obtained without reducing light extraction efficiency. Further, by eliminating the step of removing the frame, there is an advantage that man-hours can be reduced and manufacturing can be performed at low cost.

  However, the frame body can be removed from the state of FIG. 4D after the fluorescence-containing resin is cured, and the frame body can be cut as shown in FIG. 4E without the frame body. For removing the frame, for example, a method can be used in which the frame is made of a material that melts in a specific solvent, and the frame is melted with the solvent after the fluorescence-containing resin is cured. Although this method requires a step of removing the frame and increases the number of manufacturing steps, removing the frame can provide a higher-quality light-emitting device that suppresses light extraction loss due to the frame.

  In the above configuration, only one layer of the fluorescent-containing resin is coated on the light-emitting element, but the resin layer may have a multilayer configuration. At this time, when the fluorescent material is contained in each resin layer, the fluorescent material mixed in each resin layer may be the same or different. For example, by making the fluorescent material mixed in the first resin into a type having an emission peak wavelength on the longer wavelength side than the fluorescent material mixed in the second resin, the fluorescent material in the first resin The wavelength-converted light can be emitted to the outside without being wavelength-converted by the fluorescent material in the second resin, and the wavelength conversion efficiency of the light-emitting device can be improved. Alternatively, a wavelength conversion layer in which a fluorescent material is contained only in a specific layer, such as a resin layer in contact with a light-emitting element, in a multilayer resin layer, and the other layers are light-transmitting resin layers that do not contain a fluorescent material As an alternative, a filler or a diffusing agent may be mixed.

  Through the above steps, the light emitting device 100 in which the fluorescent-containing resin 120 is molded with a uniform film thickness around the light emitting element as shown in FIG. 1 is obtained. By making the film thickness of the fluorescent-containing resin 120 constant, the light emitted from the light-emitting element 110 passes through the fluorescent-containing resin 120 having a substantially uniform film thickness, so that a predetermined emission color can be realized with good reproducibility. Thus, a light emitting device with little change in chromaticity depending on the light emission observation direction can be realized. Since the gap between the frame 150 and the light emitting element 110 chip can be a gap with a die bonding accuracy level, a narrow space around the chip can be formed with high accuracy. A uniform wavelength conversion member can be formed around the chip simply by potting the fluorescent-containing resin 120 in the frame 150. As described above, according to the present embodiment, it is possible to realize an excellent feature that a high-quality light-emitting device with high mass productivity and reduced light distribution chromaticity unevenness can be mass-produced at low cost.

  The light emitting device manufacturing method and the light emitting device of the present invention can be suitably used for illumination light sources, LED displays, backlight light sources, traffic lights, illumination switches, various sensors, various indicators, and the like.

It is a schematic sectional drawing which shows the light-emitting device which concerns on one embodiment of this invention. It is a top view of the light emitting element concerning one embodiment of the present invention. It is sectional drawing in the III-III 'line | wire of FIG. It is sectional drawing and a top view which show the process of forming fluorescence containing resin around a light emitting element using a frame. It is sectional drawing which shows the conventional film formation method using a potting means. It is sectional drawing which shows the structure of the conventional light-emitting device. It is sectional drawing which shows the structure of the light-emitting device which concerns on one embodiment of this invention. It is sectional drawing which shows the conventional film formation method using a screen printing means. It is sectional drawing which shows the structure of the other conventional light-emitting device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100, 300, 400 ... Light-emitting device; 101 ... Base; 102 ... Lead electrode; 103 ... Bump; 110, 310, 410, 610, 710 ... Light-emitting element; 111, 411 ... Substrate; 114 ... n-type semiconductor layer; 115 ... n-pad electrode; 116 ... p-type semiconductor layer; 117 ... p-pad electrode; 120 ... fluorescent-containing resin; 140 ... fluorescent substance; 150 ... frame body; 313 ... Resin; 314 ... Capillary; 315 ... Lead electrode; 316 ... Fluorescent material; 412 ... Coating; 413 ... Resin; 414 ... Spatula; 415 ... Lead electrode; 416 ... Metal mask; 611: Recess: 612, 712 ... Wavelength conversion member; 616, 716 ... Fluorescent material; 910 ... LED chip; 911 ... Substrate; Translucent resin layer; 915a ... tip sealing portion; 915b ... groove; 915c ... tip sealing portion surrounding portion; 916: second light-transmissive resin layer

Claims (7)

A method of manufacturing a light emitting device comprising: a light emitting element; and a fluorescent material disposed around the light emitting element so as to convert a part of light emitted from the light emitting element to a different wavelength,
Forming a frame having an opening region opened to a predetermined size on a pedestal on which the light emitting device is placed so that a position where the light emitting device is to be disposed is included in the opening region;
Placing the light emitting element at substantially the center of the opening region such that a gap having a substantially constant size is formed around the light emitting element;
Filling a gap formed between the light emitting element and the side wall of the opening region with the curable composition containing the fluorescent material to cover the light emitting element;
A method for manufacturing a light-emitting device, comprising: A method of manufacturing a light emitting device according to claim 1,
The opening region formed in the frame body has a distance between a side surface of the light emitting element and a side wall of the opening region that divides the periphery of the light emitting device when the light emitting device is disposed at substantially the center of the opening region, and an upper surface of the light emitting device. A light-emitting device, characterized in that the distance between the upper surface of the frame and the planar portion is set to be substantially equal. A method of manufacturing a light emitting device according to claim 1 or 2,
The method for manufacturing a light emitting device, wherein the frame body is made of a translucent resin. A method for manufacturing a light-emitting device according to claim 1,
A method of manufacturing a light-emitting device, wherein the frame has a plurality of opening regions formed on the same plane at a predetermined interval. 5. The method of manufacturing a light emitting device according to claim 4, further comprising: cutting the pedestal together with the frame body around the opening region of the frame body after the step of coating the light emitting element with a fluorescent material, and individually emitting light. A step of dividing each element;
A method for manufacturing a light-emitting device, comprising: 5. The method for manufacturing a light emitting device according to claim 4, further comprising: after the step of coating the light emitting element with a fluorescent material, removing the frame and surrounding the pedestal around a position where an opening region of the frame exists. Cutting and dividing each individual light emitting element,
A method for manufacturing a light-emitting device, comprising: A light emitting element;
A pedestal including a lead electrode electrically connected to the light emitting element in a state where the light emitting element is mounted;
A wavelength conversion member that contains a fluorescent material that converts a part of the light emitted from the light emitting element to a different wavelength, and is disposed at a substantially constant thickness around the light emitting element;
A frame made of a translucent resin disposed around the side surface side of the wavelength conversion member and filled with the wavelength conversion member;
A wavelength conversion member having a substantially uniform air gap between the light emitting element and the side wall of the opening region partitioning the periphery thereof, and a wavelength conversion member coated on the upper surface of the light emitting element. A light-emitting device having a substantially equal thickness.

Images