JP2006041265A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To ensure the reduction of a circuit area and high-speed driving of a thin-film transistor (TFT) by manufacturing the TFT, having reduced gate capacitance and having suppressed short channel effect and reducing the wiring resistance of gate wiring. <P>SOLUTION: The overlapped area of a gate electrode and an active layer composed of a semiconductor film are reduced, by making the gate electrode double layers and more reducing the width of a lower layer than an upper layer. It is hereby possible to reduce gate capacitance for suppressing short channel effect, so that the TFT can be driven at a high speed. Further, it is possible to reduce also the circuit area constituted by the TFT, and hence contribute to its high speed, by separately forming the gate electrode and the wiring without forming them integrally. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as “Thin Film Transistor (TFT)”) and a manufacturing method thereof, for example, a liquid crystal display panel, an EL (electroluminescence) display device, an EC display device, and the like. The present invention also relates to a representative electro-optical device, and also relates to an electric device for improving processing speed, such as a central processing unit (CPU), formed by using a TFT, and a manufacturing method thereof. The present invention relates to an electronic device in which an apparatus and an electric device are mounted as parts.

  In recent years, a thin film transistor (TFT) is formed using a semiconductor film formed over a substrate having an insulating surface, and development of a device formed using the TFT is progressing.

  In order to perform high-speed driving in such a TFT, miniaturization and high integration of the TFT are required. However, with the progress of miniaturization, various factors are preventing high-speed driving of TFTs. For example, a parasitic capacitance (hereinafter referred to as “gate capacitance”) formed between the gate electrode, the gate insulating film, and the active layer is a cause of hindering the increase in the driving speed of the TFT.

  As the gate length (the width of the gate electrode) becomes shorter as the gate length becomes shorter, the active layer is a highly conductive semiconductor because the active layer is a highly conductive semiconductor. A phenomenon that a leak current flows between regions, that is, a short channel effect occurs.

  In order to suppress such a short channel effect, for example, when using a MOS transistor, the following technique is used.

  For example, a pocket injection technique using a notch gate electrode is used (see, for example, Patent Document 1, Patent Document 2, and Non-Patent Document 1).

JP 2003-179227 A Japanese Patent No. 3028114 S. Pidin et al. , 2001 Symposium on VLSI Technology Digest of Technical Papers, p. 35-36 (2001).

  In a circuit using TFTs, when the gate electrode and the gate wiring are formed integrally, the gate wiring becomes a high resistance as a wiring resistance in a fine TFT, which prevents high-speed driving of the TFT. Therefore, in the TFT manufacturing process, it is necessary to form the gate electrode and the gate wiring separately if necessary.

  FIG. 2 shows a top view of a TFT when a conventional gate electrode and gate wiring are integrally formed. On the semiconductor film 100, a gate wiring 111 in which an electrode and a wiring are integrally formed is formed via a gate insulating film. In such a structure, as the TFT becomes finer, the resistance of the gate wiring affects the driving speed of the TFT.

  However, if the gate electrode and the gate wiring are formed separately in order to reduce the resistance of the gate wiring, there is a problem that the circuit area formed by the TFT becomes large. Therefore, in order to reduce the circuit area, it is necessary to make the gate capacitance as small as possible and to keep the gate line at a low resistance.

  Further, when the TFT structure is further miniaturized in order to reduce the circuit area, the source electrode and the drain electrode are brought close to each other, and the short channel effect is likely to occur. If the leakage current increases due to the short channel effect, the driving speed of the TFT becomes slow. Therefore, in order to drive the TFT at high speed, it is necessary to suppress this short channel effect.

  In the present invention, the gate electrode has a laminated structure of two or more layers, and the width of the lower layer of the gate electrode is reduced by isotropic etching. Thereby, the gate capacitance can be reduced and the short channel effect can be suppressed.

  In FIG. 1, 100 is a semiconductor film, 101 is a gate insulating film, 102 is a first layer (lower layer) gate electrode, 103 is a second layer (upper layer) gate electrode, and 104 is a sidewall. As shown in FIG. 3, the first layer gate electrode 102 and the second layer gate electrode 103 are electrically connected to the gate wiring 110 in a region where the semiconductor film 100 does not exist. Note that FIG. 1 is a cross-sectional view taken along the dotted line A-A ′ in FIG. 3.

  As shown in FIGS. 1 and 3, by making the width of the first layer gate electrode 102 smaller than the width of the second layer gate electrode 103, the area where the first layer gate electrode 102 and the semiconductor film 100 overlap is reduced. Can be small. At this time, since the current transport is more dominant in the second layer gate electrode 103, there is almost no increase in resistance.

  Since the overlapping area of the first layer gate electrode 102 and the semiconductor film 100 is reduced, the gate capacitance can be reduced and the short channel effect can be suppressed. Further, since the gate electrode and the gate wiring are formed separately, the circuit area can be reduced.

In FIG. 1, the gate length of the second layer gate electrode 103 is L ₂ , the gate length of the first layer gate electrode 102 is L ₁ , the thickness of the first layer gate electrode 102 is d1, and the thickness of the gate insulating film 101 is Assuming d0, the gate capacitance can be reduced to the value shown in Equation 1. Since the driving speed of the TFT is inversely proportional to the gate capacitance, the driving speed can be increased by the configuration of the present invention.

  As shown in FIG. 1, the end portion of the first layer gate electrode 102 is shorter than the end portion of the second layer gate electrode 103 by a length Lc. In this specification, the length Lc is referred to as an undercut length Lc. If the undercut length Lc is too long, the second layer gate electrode 103 will be peeled off. If it is too short, the effects of reducing the gate capacity and suppressing the short channel effect cannot be obtained.

The present invention
Form a base film on the substrate,
Forming a semiconductor film on the base film;
Forming a first conductive film on the semiconductor film via an insulating film;
Forming a second conductive film on the first conductive film;
Etching the second conductive film to form a second layer gate electrode;
Etching the first conductive film to form a first layer gate electrode;
The width of the first layer gate electrode is smaller than the width of the second layer gate electrode,
Covering the side surfaces of the first layer gate electrode and the second layer gate electrode, forming a sidewall,
Forming a channel formation region in a region under the first layer gate electrode in the semiconductor film;
Forming a low-concentration impurity region in a region under the sidewall in the semiconductor film;
The present invention relates to a method for manufacturing a semiconductor device, wherein a source region or a drain region is formed in a region where the first layer gate electrode, the second layer gate electrode, and the sidewall are not formed in the semiconductor film. .

The present invention
Form a base film on the substrate,
Forming a semiconductor film on the base film;
Forming a first conductive film on the semiconductor film via an insulating film;
Forming a second conductive film on the first conductive film;
A second layer gate electrode is formed by etching the second conductive film by anisotropic etching,
The first conductive film is etched by isotropic etching to form a first layer gate electrode,
The width of the first layer gate electrode is smaller than the width of the second layer gate electrode, and one end of the first layer gate electrode and one end of the second layer gate electrode coincide with each other,
Covering the side surfaces of the first layer gate electrode and the second layer gate electrode, forming a sidewall,
Forming a channel formation region in a region under the first layer gate electrode in the semiconductor film;
Forming a low-concentration impurity region in a region under the sidewall in the semiconductor film;
Forming a source region or a drain region in a region where the first layer gate electrode, the second layer gate electrode and the sidewall are not formed in the semiconductor film;
An offset region is formed between the low concentration impurity region and the channel formation region between the other end of the first layer gate electrode and the other end of the second layer gate electrode. The present invention relates to a method for manufacturing a semiconductor device.

In the present invention,
The first conductive film is any one of a silicon (Si) film, a tungsten (W) film, a molybdenum (Mo) film, an aluminum (Al) film, a titanium (Ti) film, and a tantalum nitride (TaN) film. is there.

In the present invention,
The second conductive film is any one of a tungsten (W) film, an aluminum (Al) film, a molybdenum (Mo) film, and a tantalum nitride (TaN) film.

In the present invention,
The combination of the first conductive film and the second conductive film includes silicon (Si) film and tungsten (W) film, tungsten (W) film and aluminum (Al) film, molybdenum (Mo) film and aluminum (Al ) Film, aluminum (Al) film and tungsten (W) film, aluminum (Al) and molybdenum (Mo) film, titanium (Ti) film and tungsten (W) film, tungsten (W) film and tantalum nitride (TaN) film Tantalum nitride (TaN) film and aluminum (Al) film, tantalum nitride (TaN) film and tungsten (W) film.

In the present invention,
Etching gas used for the isotropic etching is:
When the combination of the first conductive film and the second conductive film is a silicon (Si) film and a tungsten (W) film, a mixed gas of CF ₄ and O ₂ ;
When the combination of the first conductive film and the second conductive film is a tungsten (W) film and an aluminum (Al) film, a mixed gas of CF ₄ and O _2, a mixed gas of SF ₆ and He, or CF ₄ , A mixed gas of Cl ₂ and O ₂ ,
When the combination of the first conductive film and the second conductive film is a molybdenum (Mo) film and an aluminum (Al) film, a mixed gas of CF ₄ and O ₂ or a mixed gas of SF ₆ and He;
The combination of the first conductive film and the second conductive film is an aluminum (Al) film and a tungsten (W) film, an aluminum (Al) film and a molybdenum (Mo) film, or a titanium (Ti) film and tungsten (W). ) In the film, a mixed gas of BCl ₃ and Cl ₂ ,
When the combination of the first conductive film and the second conductive film is a tungsten (W) film and a tantalum nitride (TaN) film, a mixed gas of CF ₄ , Cl ₂ and O ₂ ,
When the combination of the first conductive film and the second conductive film is a tantalum nitride (TaN) film and an aluminum (Al) film, a mixed gas of CF ₄ and O ₂ , a Cl ₂ gas, and a mixed gas of HBr and Cl ₂ , or a mixed gas of CF ₄ and Cl _2,
The combination of the first conductive film and the second conductive film is a Cl ₂ gas, a mixed gas of HBr and Cl ₂ , or a mixed gas of CF ₄ and Cl _{2 in} a tantalum nitride (TaN) film and a tungsten (W) film. ,
It is.

In the present invention,
The end portion of the first layer gate electrode is shorter than the end portion of the second layer gate electrode by an undercut length Lc,
The undercut width is 0.05 μm to 0.3 μm.

  By making the gate electrode into two layers and making the width of the lower layer smaller than that of the upper layer, the area where the gate electrode and the active layer made of the semiconductor film overlap is reduced. Thereby, the TFT can be driven at a high speed. In addition, by forming the gate electrode and the wiring separately without being integrally formed, the circuit area constituted by the TFT can be reduced, which contributes to speeding up.

  In addition, since the overlapping area between the lower gate electrode and the semiconductor film is reduced, the gate capacitance can be reduced and the short channel effect can be suppressed.

  This embodiment will be described with reference to FIGS. 4A to 4D and FIGS. 5A to 5D.

  First, a base film 201 and a semiconductor film 202 are formed over a substrate 200 (FIG. 1A).

  As the substrate 200, a glass substrate, a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature may be used. In this embodiment mode, a glass substrate is used.

  As the base film 201, a base film 201 formed of an insulating film such as a silicon nitride film (SiN), a silicon nitride film containing oxygen (SiNO film), or a silicon oxide film containing nitrogen (SiON) is formed. In this embodiment mode, an example is shown in which a silicon nitride film (SiNO film) 201a containing oxygen is stacked as a base film 201 with a thickness of 50 nm and a silicon oxide film (SiON film) 201b containing nitrogen is stacked with a thickness of 100 nm.

  However, the base film 201 may be a single layer film or a structure in which three or more layers are stacked. Further, the base film may not be formed.

  The semiconductor film 202 is formed by forming a semiconductor film having an amorphous structure by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like), and then a known crystallization treatment (laser crystallization method, heat A crystalline semiconductor film obtained by performing a crystallization method or a thermal crystallization method using a catalyst such as nickel may be used. There is no limitation on the material of the crystalline semiconductor film, but the crystalline semiconductor film is preferably formed of silicon (Si) or a silicon germanium (SiGe) alloy.

  Further, a semi-amorphous semiconductor film formed by plasma CVD or the like may be further crystallized by a laser and used as a crystalline semiconductor film.

Note that a semi-amorphous semiconductor film is a film including a semiconductor having a structure intermediate between an amorphous semiconductor and a semiconductor (including single crystal and polycrystal) films having a crystal structure. This semi-amorphous semiconductor film is a semiconductor film having a third state that is stable in terms of free energy, and is a crystalline film having short-range order and lattice distortion, and has a grain size of 0.5 to 20 nm. And can be dispersed in the non-single-crystal semiconductor film. The semi-amorphous semiconductor film has its Raman spectrum shifted to a lower wavenumber than 520 cm ⁻¹ , and diffraction peaks of (111) and (220) that are derived from the Si crystal lattice are observed in X-ray diffraction. The Further, hydrogen or halogen is contained at least 1 atomic% or more as a neutralizing agent for dangling bonds. Here, for convenience, such a semiconductor film is referred to as a semi-amorphous semiconductor (SAS) film. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a good semi-amorphous semiconductor film can be obtained. Note that a microcrystalline semiconductor film is also included in the semi-amorphous semiconductor film.

The SAS film can be obtained by glow discharge decomposition of a silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. In addition, it is easy to form a SAS film by diluting and using hydrogen or a gas obtained by adding one or plural kinds of rare gas elements selected from helium, argon, krypton, and neon to hydrogen. Can be. It is preferable to dilute the silicide gas at a dilution rate in the range of 2 to 1000 times. Furthermore, a carbide gas such as CH ₄ or C ₂ H ₆ , a germanium gas such as GeH ₄ or GeF ₄ , F ₂ or the like is mixed in the silicide gas, so that the energy bandwidth is 1.5-2. You may adjust to 4 eV or 0.9-1.1 eV.

  In this embodiment mode, an amorphous silicon film having a thickness of 66 nm is formed by a plasma CVD method, and a solution containing a substance that promotes crystallization is applied. Subsequently, dehydrogenation is performed by heating at 550 ° C. for 1 hour, and then crystallization is performed by heating at 550 ° C. for 4 hours to obtain a crystalline silicon film. Next, crystallinity is further improved by laser irradiation. Further, an amorphous silicon film is formed on the obtained crystalline silicon film and heated in a nitrogen atmosphere at 550 ° C. for 4 hours to remove (getter) a substance that promotes crystallization remaining in the crystalline silicon film. .

  Next, after an impurity for threshold control is introduced into the semiconductor film 202, an insulating film 203, a first conductive film 204, and a second conductive film 205 are formed over the semiconductor film 202 (see FIG. 4B). .

In this embodiment mode, boron (B) is used as an impurity for threshold control, diborane (B ₂ H ₆ ) is applied to the semiconductor film 202 with an acceleration voltage of 25 keV, and a dose amount of 1.0 × 10 ¹³ cm ⁻³ to It introduce ^| transduces at 8.0 * 10 < ¹³ > cm <^-3> , Preferably it is 4.0 * 10 < ¹³ > cm <^-3> .

  The insulating film 203 may be an insulating film such as a silicon oxide film (SiOx), a silicon nitride film (SiN), a silicon nitride film containing oxygen (SiNO film), or a silicon oxide film containing nitrogen (SiON). Good. In this embodiment, a silicon oxide film containing nitrogen is formed with a thickness of 20 nm to 40 nm by a plasma CVD method.

  For the first conductive film 204 and the second conductive film 205, a combination of materials having different etching rates for the first conductive film 204 and the second conductive film 205 needs to be selected. For example, as a combination of the first conductive film 204 and the second conductive film 205, silicon (Si) and tungsten (W), tungsten (W) and aluminum (Al), molybdenum (Mo), aluminum (Al), and aluminum (Al) and tungsten (W), aluminum (Al) and molybdenum (Mo), titanium (Ti) and tungsten (W), tungsten (W) and tantalum nitride (TaN), tantalum nitride (TaN) and aluminum (Al) Tantalum nitride (TaN), tungsten (W), or the like can be used. In this embodiment mode, tantalum nitride (TaN) is formed as a first conductive film 204 with a thickness of 30 nm, and tungsten (W) is formed as a second conductive film 205 with a thickness of 370 nm.

  Next, the second conductive film 205 is etched by anisotropic etching to form a second layer gate electrode 211. Etching of the second conductive film 205 is performed with a high selection ratio with respect to the material of the first conductive film 204, and the first conductive film 204 is used as an etching stopper (see FIG. 4C).

  After the second conductive film 205 is etched, the first conductive film 204 is etched by isotropic etching. At that time, the insulating film 203 is isotropically etched under a high selection ratio condition that works as an etching stopper. The first conductive film 204 recedes from the second layer gate electrode 211, and the width thereof is smaller than the width of the second layer gate electrode 211 (see FIG. 4D).

In this isotropic etching, when silicon (Si) and tungsten (W) are used as a combination of the first conductive film 204 and the second conductive film 205 (second layer gate electrode 211), the etching gas is A high selectivity can be obtained by using a mixed gas of CF ₄ and O ₂ . Similarly, for tungsten (W) and aluminum (Al), a mixed gas of CF ₄ and O _2, a mixed gas of SF ₆ and He, or a mixed gas of CF ₄ , Cl ₂ and O ₂ can be used. For molybdenum (Mo) and aluminum (Al), a mixed gas of CF ₄ and O ₂ or a mixed gas of SF ₆ and He can be used. For aluminum (Al) and tungsten (W), aluminum (Al) and molybdenum (Mo), and titanium (Ti) and tungsten (W), a mixed gas of BCl ₃ and Cl ₂ can be used. Further, for tungsten (W) and tantalum nitride (TaN), a mixed gas of CF ₄ , Cl ₂ and O ₂ can be used. For tantalum nitride (TaN) and aluminum (Al), a mixed gas of CF ₄ and O ₂ , a Cl ₂ gas, a mixed gas of HBr and Cl _{2, and} a mixed gas of CF ₄ and Cl ₂ can be used. For tantalum nitride (TaN) and tungsten (W), a Cl ₂ gas, a mixed gas of HBr and Cl _{2, or} a mixed gas of CF ₄ and Cl ₂ can be used.

In this embodiment mode, when the second conductive film 205 formed of tungsten (W) is etched, a mixed gas in which CF ₄ , Cl ₂ , and O ₂ are flowed at a flow rate of 50 sccm, 50 sccm, and 20 sccm is used. . The first conductive film 204 formed of tantalum nitride (TaN) is isotropically etched by flowing Cl ₂ at 60 sccm.

  Through the above steps, the first layer gate electrode (lower layer gate electrode) 210 and the second layer gate electrode (upper layer gate electrode) 211 are formed.

  As shown in FIG. 4D, the end portion of the first layer gate electrode 210 is shorter than the end portion of the second layer gate electrode 211 by the undercut length Lc by isotropic etching. As described above, if the undercut length Lc is too long, the second layer gate electrode 211 will be peeled off. If it is too short, the effects of reducing the gate capacity and suppressing the short channel effect cannot be obtained. Therefore, in view of both effects, the undercut length Lc is preferably 0.05 μm to 0.3 μm.

The first layer gate electrode 210 is formed in order to obtain a selection ratio at the time of etching between the gate electrode and the gate insulating film. For example, in the case where tungsten (W) is formed on the second conductive film 205 and a silicon oxide film is formed on the insulating film 203 as thin as 20 nm or less, CF ₄ , Cl ₂ , and O ₂ are used as the etching gas for tungsten. When the conductive film 204 is not formed, the selectivity between tungsten and the silicon oxide film is small and the insulating film 203 may be etched. Furthermore, if a halogen element such as fluorine (F) or chlorine (Cl) is contained in the etching gas, the silicon film formed under the insulating film 203 may be etched. However, when the first conductive film 204 is formed between the insulating film 203 and the second conductive film 205, and tantalum nitride is used as the first conductive film 204, for example, the selectivity between tungsten and tantalum nitride and tantalum nitride Since the selection ratio of the silicon oxide film is large, the gate electrode 210 can be formed without etching the insulating film 203.

  Next, using the first-layer gate electrode 210 and the second-layer gate electrode 211 as a mask, one conductivity type (p-type or n-type) impurity is introduced into the semiconductor film 202 at a low concentration to form a low-concentration impurity region. . At this time, the impurity is introduced so as to go around to the end of the first layer gate electrode 210 (see FIG. 5A).

In this embodiment mode, when an n-channel thin film transistor (n-channel TFT) is manufactured, a phosphine (PH ₃ ) is used, an applied voltage is 60 to 80 keV, for example, 60 keV, and a dose is 2.0 × 10 ^13. Phosphorus (P) is introduced into the semiconductor film 202 at ˜5.0 × 10 ¹³ cm ⁻² , for example, 2.7 × 10 ¹³ . As a result, a channel formation region 232 is formed.

When a p-channel TFT is manufactured, diborane (B ₂ H ₆ ) is applied with an applied voltage of 30 to 45 keV, for example, 30 keV, and a dose amount of 1.0 × 10 ^{15 to} 2.5 × 10 ¹⁶ cm ⁻² , for example, 2 ×. Boron (B) is introduced into the semiconductor film under the condition of 10 ¹⁶ cm ⁻² . As a result, a source region or a drain region of the p-channel TFT and a channel formation region 232 are formed when this impurity is introduced.

  Next, as shown in FIG. 5B, insulating films, so-called sidewalls 221 are formed to cover the side surfaces of the first layer gate electrode 210 and the second layer gate electrode 211. The sidewall can be formed using an insulating film containing silicon by a plasma CVD method or a low pressure thermal CVD (LPCVD) method.

  In the case where the sidewall 221 is formed using plasma CVD, the plasma cannot enter the region where the first layer gate electrode 210 does not exist between the second layer gate electrode 211 and the gate insulating film 222. In some cases, the gap 250 cannot be formed (see FIG. 32). On the other hand, when the sidewall 221 is formed by using low pressure thermal CVD, the gap 250 is not formed. However, even if the gap 250 is formed, there is no problem in strength because the gate insulating film 222, the first layer gate electrode 210, and the second layer gate electrode 211 exist around the gap 250.

In the present embodiment, a low pressure thermal CVD (LPCVD) method is performed after forming a silicon oxide film (SiON) containing nitrogen at a pressure of 133 Pascal (133 Pa) using SiH ₄ and N ₂ O as a source gas by a plasma CVD method. Thus, a silicon oxide film (SiON) containing nitrogen is formed at a pressure of 266 Pascal (266 Pa) and a temperature of 400 ° C. using SiH ₄ and N ₂ O as source gases. Thereafter, a silicon oxide film (SiON) containing nitrogen is etched, whereby a sidewall 221 having a tapered shape is formed. At that time, the insulating film 203 is also etched to form a gate insulating film 222 (see FIG. 5B).

The etching conditions for forming the sidewalls using the low pressure thermal CVD method are as follows. As a first etching condition, plasma is generated over several seconds, for example, 3 seconds, using CHF ₃ and He as source gases. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Etching gas ions can be accelerated by a voltage applied to the electrode on which the substrate is disposed. As a second etching condition, a voltage is applied for several tens of seconds, for example, 60 seconds, using CHF ₃ and He as a source gas. The etching time can be determined so as to end when the height of the film to be etched reaches a predetermined value (100 nm in this embodiment). At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. As a third etching condition, CHF ₃ or He is used as a source gas, and a voltage is applied for several tens of seconds, for example, 31 seconds from the time when the surface film to be etched disappears. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 50 W, and the electrode on which the substrate is disposed is 450 W.

Etching conditions for forming a sidewall using the plasma CVD method are as follows. As a first etching condition, plasma is generated over several seconds, for example, 3 seconds, using CHF ₃ and He as source gases. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. As a second etching condition, a voltage of several tens of seconds, for example, 50 seconds is applied using CHF ₃ and He as a source gas. The etching time can be determined so as to end when the height of the film to be etched reaches 100 nm. At this time, the electrode on the side facing the substrate placed in the film formation apparatus is set to 900 W, and the electrode on which the substrate is placed is set to 150 W. As the third etching condition, CHF ₃ and He are used as the source gas, and a voltage is applied for several tens of seconds, for example, 30 seconds from the time when the surface film to be etched disappears. At this time, the electrode on the side facing the substrate disposed in the film forming apparatus is 50 W, and the electrode on which the substrate is disposed is 300 W.

In the present embodiment, as the first etching condition, first, plasma is generated over several seconds, for example, 3 seconds, while supplying the source gases CHF ₃ and He at flow rates of 50 sccm and 100 sccm, respectively. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Next, as a second etching condition, a voltage is applied for several tens of seconds, for example, 60 seconds while the source gases CHF ₃ and He are supplied at flow rates of 7.5 sccm and 142.5 sccm, respectively. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Then, as a third etching condition, a voltage is applied for several tens of seconds, for example, 20 seconds from the time when it is considered that the film on the surface to be etched disappears while the source gases CHF ₃ and He are supplied at a flow rate of 48 sccm and 152 sccm. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 50 W, and the electrode on which the substrate is disposed is 450 W.

  The end portion of the sidewall formed as described above does not need to have a taper shape, and preferably has a rectangular shape. This is because when the end portion of the sidewall is formed in a rectangular shape, it is possible to prevent the impurity concentration added next from having a concentration gradient under the sidewall.

Next, using the sidewall 221, the first layer gate electrode 210 and the second layer gate electrode 211 as a mask, phosphorus (P) is applied at an applied voltage of 10 to 40 keV, for example, 20 keV, and a dose of 1.0 × 10 ^{15 to} 2.5. It is introduced into the semiconductor film 202 at × 10 ¹⁶ cm ⁻² , for example, 3.0 × 10 ¹⁵ cm ⁻² . As a result, the source or drain region 230 of the n-channel TFT is formed. Further, a low concentration impurity region 231 is formed under the sidewall 221 (see FIG. 5C).

In this embodiment mode, the source or drain region 230 of the n-channel TFT contains phosphorus (P) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ . The low-concentration impurity region 231 of the n-channel TFT contains phosphorus (P) at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ .

  Note that when the impurity is introduced into the semiconductor film 202 at a low concentration, the impurity is not introduced to the end portion of the first layer gate electrode 210 due to the introduction conditions such as applied voltage, and the end portion of the first layer gate electrode 210 It is also possible to go around only between the end portions of the second layer gate electrode 211. In such a case, an offset region 240 that does not contain an impurity is formed between the channel formation region 232 and the low-concentration impurity region 231 (see FIG. 5D).

  When the offset region 240 is formed, hot carrier generation can be suppressed when the power supply voltage is high. When the width of one offset region shown in FIG. 5D is the offset region length S, S is preferably 0 to 0.2 μm. If the offset region length S is too long, the effective channel length through which carriers flow becomes long, and the drive speed may be slow.

  According to this embodiment, a thin film transistor with a small gate capacitance and a suppressed short channel effect can be formed. Forming an offset region is also useful because it has an effect of suppressing hot carriers.

  In the present embodiment, the relationship between the etching time of the lower gate electrode and the undercut length Lc will be described with reference to FIGS. Note that the thin film transistor used in this example is a thin film transistor formed by the method described in Embodiment Mode.

6 uses tantalum nitride (TaN) as the first layer gate electrode (lower gate electrode) 102 and tungsten (W) as the second layer gate electrode (upper gate electrode) 103 in FIG. This shows the relationship between the etching time of the first-layer gate electrode 102 and the undercut length Lc when .5 μm to 2.0 μm. The tantalum nitride of the first layer gate electrode 102 is etched using Cl ₂ as an etching gas and a pressure of 2.5 Pa.

FIG. 7 shows the relationship between the etching time of the first layer gate electrode 102 and the undercut length Lc when the gate length Li is 0.6 μm to 1.0 μm. The tantalum nitride of the first layer gate electrode 102 in FIG. 7 is etched using Cl ₂ as an etching gas and a pressure of 1.2 Pa.

  As shown in FIGS. 6 and 7, the etching time of tantalum nitride (TaN) and the undercut length are substantially proportional. Therefore, the etching time may be changed to control the undercut length.

  In FIG. 6, the etching pressure is 2.5 Pa, and the selection ratio between tantalum nitride and a silicon oxide film containing nitrogen is 23. On the other hand, in FIG. 7, the etching pressure is 1.2 Pa, and the selection ratio between tantalum nitride and a silicon oxide film containing nitrogen is 16. The higher the pressure during etching (FIG. 6), the longer the undercut length.

  As described in the embodiment, the undercut length Lc is preferably 0.05 μm to 0.3 μm in view of suppression of peeling of the second layer gate electrode 211, reduction of gate capacitance, and suppression of short channel effect.

  In a TFT having a fine structure, the undercut length Lc must be strictly controlled in order to obtain the effects of reducing the gate capacitance and suppressing the short channel effect without peeling off the second layer gate electrode 103. . However, as shown in this embodiment, the undercut length Lc need only be controlled by controlling the etching time of the conductive film material used for the first layer gate electrode 102.

  This embodiment will be described with reference to FIGS. 8A to 8D and FIGS. 9A to 9B.

  First, the layers up to the second layer gate electrode (upper layer gate electrode) 211 of FIG. 4C shown in the embodiment are formed. After that, as shown in FIG. 8A, a mask 300 that covers part of the second-layer gate electrode 211 and the first conductive film 204 is formed. Then, the first conductive film 204 is patterned using the mask 300.

  Isotropic etching is performed on the patterned first conductive film 301 using the second layer gate electrode 211 as a mask and the insulating film 203 as an etching stopper.

In this embodiment, the first conductive film 301 formed of tantalum nitride (TaN) is isotropically etched by flowing Cl ₂ at a flow rate of 60 sccm (see FIG. 8B).

  By this isotropic etching, the region of the patterned first conductive film 301 that does not overlap with the second layer gate electrode 211 is etched until the end portion thereof is substantially equal to the end portion of the second layer gate electrode 211. Is done. On the other hand, in the region of the patterned first conductive film 301 that overlaps with the second layer gate electrode 211, the etching gas wraps under the second layer gate electrode 211 and passes through the first conductive film 301. Etch. Therefore, as shown in FIG. 8C, a gate electrode having a shape in which the second layer gate electrode 211 protrudes from the first layer gate electrode 310 like an eave is obtained.

Next, an impurity imparting one conductivity is introduced into the semiconductor film 202. In the case of manufacturing an n-channel thin film transistor (n-channel TFT), phosphine (PH ₃ ) is used, the applied voltage is 60 to 80 keV, for example, 60 keV, and the dose is 2.0 × 10 ^{13 to} 5.0 × 10. Phosphorus (P) is introduced into the semiconductor film 202 at ¹³ cm ⁻² , for example, 2.7 × 10 ¹³ . Thus, a channel formation region 332 is formed (see FIG. 8D).

In the case of manufacturing a p-channel TFT, diborane (B ₂ H ₆₎ the applied voltage 30～45KeV, for example 30 keV, a dose of ^{1.0 × 10 15 ~2.5 × 10 16} cm -2, for example 2 × Boron (B) is introduced into the semiconductor film under the condition of 10 ¹⁶ cm ⁻² . As a result, the source region or the drain region 302a and 302b of the p-channel TFT and the channel formation region 332 are formed.

  Next, as shown in FIG. 9A, insulating films, so-called sidewalls 321a and 321b, are formed so as to cover the side surfaces of the first layer gate electrode 310 and the second layer gate electrode 211. The sidewalls 321a and 321b can be formed using an insulating film containing silicon by a plasma CVD method or a low pressure thermal CVD (LPCVD) method.

In this embodiment, a silicon oxide film (SiON) containing nitrogen is formed by a plasma CVD method using SiH ₄ and N ₂ O as a source gas at a pressure of 133 Pascal (133 Pa), and then by a low pressure thermal CVD (LPCVD) method. SiH the raw material gas _4, N ₂ O and using pressure 266 Pascals (266 Pa), at a temperature 400 ° C., to form a silicon oxide film (SiON) containing nitrogen. Thereafter, a silicon oxide film (SiON) containing nitrogen is etched, whereby a sidewall 221 having a tapered shape is formed. At that time, the insulating film 203 is also etched, and a gate insulating film 322 is formed.

In the present embodiment, first, as a first etching condition, plasma is generated over several seconds, for example, 3 seconds while flowing the source gases CHF ₃ and He at flow rates of 50 sccm and 100 sccm, respectively. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Next, as a second etching condition, a voltage is applied for several tens of seconds, for example, 60 seconds while the source gases CHF ₃ and He are supplied at flow rates of 7.5 sccm and 142.5 sccm, respectively. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Then, as a third etching condition, a voltage is applied for several tens of seconds, for example, 20 seconds from the time when it is considered that the film on the surface to be etched disappears while the source gases CHF ₃ and He are supplied at a flow rate of 48 sccm and 152 sccm. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 50 W, and the electrode on which the substrate is disposed is 450 W.

Next, using the sidewalls 321a and 321b, the first layer gate electrode 310 and the second layer gate electrode 211 as a mask, phosphorus (P) is applied at an applied voltage of 10 to 40 keV, for example, 20 keV, and a dose of 1.0 × 10 ¹⁵ to 2. 5 × 10 ¹⁶ cm ⁻² , for example, 3.0 × 10 ¹⁵ cm ^−2, which is introduced into the semiconductor film 202. As a result, the source region or the drain region 330a and 330b of the n-channel TFT are formed. Low-concentration impurity regions 331a and 331b are formed under the sidewalls 321a and 321b, respectively (see FIG. 9B).

In this embodiment, phosphorus (P) is contained in the source region or the drain region 330a and 330b of the n-channel TFT at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ . The low-concentration impurity regions 331a and 331b of the n-channel TFT contain phosphorus (P) at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ .

  Further, in the semiconductor film 202, the end of the second layer gate electrode 211 that does not coincide with the end of the first layer gate electrode 310, and the second layer gate electrode 211 of the first layer gate electrode 310. An offset region 351 is formed under the region 350 between the end portion that does not coincide with the end portion, that is, the region 350 in which the second layer gate electrode 211 protrudes from the first layer gate electrode 310. Has been. Thus, the offset region 351 can be formed only on the source region side or the drain region side.

  However, since the drain region is strongly affected by the electric field, if the offset region 351 is formed on the drain region side, the hot carrier effect may occur and the reliability of the TFT may be impaired. Therefore, if the offset region 351 is formed only on the source region side, a more reliable TFT can be obtained.

  Further, as shown in FIG. 9C, the first-layer gate electrode 310 is provided between the gate insulating film 322 and the region 350 where the second-layer gate electrode 211 protrudes from the first-layer gate electrode 310. In some cases, a gap 340 surrounded by the sidewall 321a is formed. In the isotropic etching process, it is possible to control the amount of the second conductive film 301 to be etched and the presence or absence of a void and the size of the void when formed by the sidewall material.

  Even if the air gap 340 is formed under the second layer gate electrode 211, no other electrode or wiring is formed in this region, and a contact hole that penetrates the air gap 340 is not formed. Does not occur. Further, since the sidewall 321a is formed outside the gap 340, there is no possibility that gas, liquid, or other impurities are mixed into the gap 340 from the outside. Therefore, the presence of the air gap 340 has no effect on the TFT.

  Further, this embodiment can be freely combined with any description in Embodiment Mode and Embodiment 1 if necessary.

  In this embodiment, an example of manufacturing a liquid crystal display (LCD) using the present invention is shown in FIGS. 10 (A) to 10 (D), FIGS. 11 (A) to 11 (C), 12 (A) to 12 (C), FIGS. 13 (A) to 13 (B), FIG. 14 and FIG.

  A manufacturing method of a display device described in this embodiment is a method of manufacturing a pixel portion including the pixel TFT 542 and a TFT of a driver circuit portion provided in the periphery thereof at the same time. However, for the sake of simplicity, a CMOS circuit 620 including an n-channel TFT 540 and a p-channel TFT 541 which are basic units with respect to the driver circuit is illustrated.

  First, as illustrated in FIG. 10A, a base film 501 is formed over a substrate 500. As the substrate 500, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, or the like can be used. It is also possible to use a substrate made of a plastic such as PET, PES, or PEN, or a flexible synthetic resin such as acrylic.

  The base film 501 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the substrate 500 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Accordingly, diffusion of alkali metal or alkaline earth metal into the semiconductor film can be suppressed), or an insulating film such as silicon nitride or silicon oxide containing nitrogen is used. In this embodiment, a silicon oxide film containing nitrogen is formed by a plasma CVD method so as to have a thickness of 10 nm to 400 nm (preferably 50 nm to 300 nm).

  Note that the base film 501 may be a single layer or a stack of a plurality of insulating films. In addition, when using a substrate that contains alkali metal or alkaline earth metal, such as a glass substrate, stainless steel substrate, or plastic substrate, it is effective to provide a base film from the viewpoint of preventing impurity diffusion. However, when diffusion of impurities does not cause any problem, such as a quartz substrate, it is not necessarily provided.

  In this embodiment, a silicon nitride film (SiNO) containing oxygen having a thickness of 50 nm is formed by a plasma CVD method, and a laminated film in which a silicon oxide film containing nitrogen (SiON) film having a thickness of 100 nm is formed thereon is used as the base film 501. .

  Next, a semiconductor film 502 is formed over the base film 501. The thickness of the semiconductor film 502 is 25 nm to 100 nm (preferably 30 nm to 60 nm). Note that the semiconductor film 502 may be an amorphous semiconductor, a semi-amorphous semiconductor, or a polycrystalline semiconductor. As the semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

  In this embodiment, an amorphous silicon film is formed as the semiconductor film 502 by 66 nm by plasma CVD.

  Next, heat treatment is performed on the semiconductor film 502. In this embodiment, heat treatment at 500 ° C. for 1 hour is applied to the semiconductor film 502. Thus, the semiconductor film 502 can be dehydrogenated.

  Next, the catalyst element 505 is introduced into the semiconductor film 502. In this embodiment, nickel (Ni) is used as the catalyst element 505. In addition, germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), lead (Pb), Elements such as cobalt (Co), platinum (Pt), copper (Cu), and gold (Au) can be used. In this embodiment, a solution containing 10 ppm of nickel (Ni) as the catalyst element 505 is applied to the surface of the semiconductor film 502 by a spin coating method. As a result, nickel (Ni) is introduced into the semiconductor film 502.

  Next, heat treatment is performed at 500 to 550 ° C. for 2 to 20 hours to crystallize the semiconductor film 502 and form a crystalline semiconductor film. In this embodiment, the crystalline semiconductor film 503 is formed by heating at 550 ° C. for 4 hours in a nitrogen atmosphere.

  Next, the crystalline semiconductor film 503 crystallized by the heat treatment is irradiated with laser light, so that a crystalline semiconductor film 504 with higher crystallinity is obtained (see FIG. 10B).

  When a crystallization process using a laser beam is performed after a crystallization process using a catalytic element, the crystal formed during the crystallization using the catalytic element remains on the side closer to the substrate without being melted by the laser beam irradiation. Then, crystallization proceeds using the crystal as a crystal nucleus. Therefore, crystallization by laser light irradiation tends to progress uniformly from the substrate side toward the surface of the semiconductor film, and the crystallinity of the semiconductor film can be improved more than in the case of only the crystallization process by laser light. The surface roughness of the semiconductor film after crystallization by light can be suppressed. Accordingly, variation in characteristics of semiconductor elements formed later, typically TFTs, can be further suppressed, and off-current can be suppressed.

  For laser crystallization, a continuous wave laser or a pulsed laser having an oscillation frequency of 10 MHz or more, preferably 80 MHz or more can be used.

Specifically, as a continuous wave laser, an Ar laser, a Kr laser, a CO ₂ laser, a YAG laser, a YVO ₄ laser, a YLF laser, a YAlO ₃ laser, a GdVO ₄ laser, a Y ₂ O ₃ laser, a ruby laser, an alexandride A laser, a Ti: sapphire laser, a helium cadmium laser, and the like can be given.

In addition, an Ar laser, a Kr laser, an excimer laser, a CO ₂ laser, a YAG laser, a Y ₂ O ₃ laser, a YVO ₄ laser, and a YLF laser can be used as long as the oscillation frequency is 10 MHz or higher, preferably 80 MHz or higher. , Pulsed lasers such as YAlO ₃ laser, GdVO ₄ laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser or gold vapor laser can be used.

  As described above, the pulsed laser shows an effect equivalent to that of the continuous wave laser as the oscillation frequency is increased.

For example, when a solid-state laser capable of continuous oscillation is used, a crystal having a large grain size can be obtained by irradiating laser light of second to fourth harmonics. Typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of a YAG laser (fundamental wave 1064 nm). For example, laser light emitted from a continuous wave YAG laser is converted into a harmonic by a non-linear optical element, and irradiated to the semiconductor film 502. Energy density may be about 0.01 to 100 MW / cm ² (preferably 0.1~10MW / cm ^2).

  Note that laser light may be irradiated in an inert gas atmosphere such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold voltage caused by variation in interface state density can be suppressed.

  Note that in this embodiment, an example is shown in which a catalyst element is added and heat treatment is performed to promote crystallization, and then the crystallinity is increased by laser light irradiation. However, the heat treatment step may be omitted. good. Specifically, after adding a catalyst element, laser light may be irradiated instead of heat treatment to improve crystallinity.

  Further, the catalyst element may be introduced over the entire surface of the semiconductor film, or may be grown after being introduced into a part of the semiconductor film. When the catalytic element is introduced into a part of the semiconductor film, crystal growth proceeds in a direction parallel to the substrate from the introduced region.

  Next, the catalytic element used for crystal growth is removed (gettering) from the crystalline semiconductor film 504. In this embodiment, a new amorphous silicon film having a thickness of 150 nm is formed on the crystalline semiconductor film 504 and heated at 550 ° C. for 4 hours in a nitrogen atmosphere, so that the catalytic element present in the crystalline semiconductor film 504 is obtained. Are moved to the newly formed amorphous silicon film. By this heat treatment, the catalytic elements in the crystalline semiconductor film 504 are reduced. Thereafter, by removing the newly formed silicon film, only the crystalline semiconductor film 504 in which the catalytic element is reduced remains.

Next, an impurity for controlling the threshold value is introduced into the crystalline semiconductor film 504. In this embodiment, boron (B) is used as an impurity for threshold control, diborane (B ₂ H ₆ ) is applied to the crystalline semiconductor film 504 with an acceleration voltage of 25 keV and a dose of 1.0 × 10 ¹³ cm ^−3. ~8.0 × 10 ¹³ cm ^-3, preferably introduced at 4.0 × 10 ¹³ cm ^-3.

  Next, as illustrated in FIG. 10C, the crystalline semiconductor film 504 is patterned, so that island-shaped semiconductor films 507 to 509 are formed. These island-like semiconductor films 507 to 509 serve as active layers of TFTs formed in the subsequent processes.

Next, an impurity for threshold control is introduced into the island-shaped semiconductor film. In this embodiment, diborane (B ₂ H ₆ ) is accelerated at an acceleration voltage of 10 to 30 keV, for example 25 keV, and a dose amount of 1.0 × 10 ^{13 to} 8.0 × 10 ¹³ cm ⁻² , for example 4.0 × 10 ¹³ cm. Boron (B) is introduced into the island-shaped semiconductor film by ^-2 doping.

  Next, an insulating film 510 is formed so as to cover the island-shaped semiconductor films 507 to 509. For the insulating film 510, for example, silicon oxide (SiOx), silicon nitride (SiN), silicon oxide containing nitrogen (SiON), or the like can be used. As a film formation method, a plasma CVD method, a sputtering method, or the like can be used.

In this embodiment, SiH ₄ and N ₂ O are used as source gases by plasma CVD, and flowed at flow rates of 2 sccm and 800 sccm, respectively, to form a silicon oxide film (SiON) containing nitrogen of 20 nm to 40 nm, for example, 20 nm. did.

  Next, a first conductive film 511 and a second conductive film 512 are formed over the insulating film 510 (see FIG. 10D).

  For the first conductive film 511 and the second conductive film 512, it is necessary to select a combination of materials having different etching rates for the first conductive film 511 and the second conductive film 512. For example, as a combination of the first conductive film 511 and the second conductive film 512, silicon (Si) and tungsten (W), tungsten (W) and aluminum (Al), molybdenum (Mo), aluminum (Al), and aluminum (Al) and tungsten (W), aluminum (Al) and molybdenum (Mo), titanium (Ti) and tungsten (W), tungsten (W) and tantalum nitride (TaN), tantalum nitride (TaN) and aluminum (Al) Tantalum nitride (TaN), tungsten (W), or the like can be used. In this embodiment, 30 nm of tantalum nitride (TaN) is formed as the first conductive film 511 and 370 nm of tungsten (W) is formed as the second conductive film 512 by sputtering.

  Next, the second conductive film 512 is etched by anisotropic etching to form second layer gate electrodes 560a to 560c. Etching of the second conductive film 512 is performed with respect to the material of the first conductive film 511 under a high selection ratio condition, and the first conductive film 511 is used as an etching stopper (see FIG. 11A).

  After the second conductive film 512 is etched, the first conductive film 511 is etched by isotropic etching. At that time, the insulating film 510 is isotropically etched under a high selection ratio condition that works as an etching stopper. The first conductive film 511 recedes from the second layer gate electrodes 560a to 560c, and the width thereof is smaller than the width of the second layer gate electrodes 560a to 560c (see FIG. 11B).

In this isotropic etching, when silicon (Si) and tungsten (W) are used as a combination of the first conductive film 511 and the second conductive film 512 (second layer gate electrodes 560a to 560c), etching is performed. A high selectivity can be obtained by using a mixed gas of CF ₄ and O _{2 as} the gas. Similarly, for tungsten (W) and aluminum (Al), a mixed gas of CF ₄ and O _2, a mixed gas of SF ₆ and He, or a mixed gas of CF ₄ , Cl ₂ and O ₂ can be used. For molybdenum (Mo) and aluminum (Al), a mixed gas of CF ₄ and O ₂ or a mixed gas of SF ₆ and He can be used. For aluminum (Al) and tungsten (W), aluminum (Al) and molybdenum (Mo), and titanium (Ti) and tungsten (W), a mixed gas of BCl ₃ and Cl ₂ can be used. Further, for tungsten (W) and tantalum nitride (TaN), a mixed gas of CF ₄ , Cl ₂ and O ₂ can be used. For tantalum nitride (TaN) and aluminum (Al), a mixed gas of CF ₄ and O ₂ , a Cl ₂ gas, a mixed gas of HBr and Cl _{2, and} a mixed gas of CF ₄ and Cl ₂ can be used. For tantalum nitride (TaN) and tungsten (W), a Cl ₂ gas, a mixed gas of HBr and Cl _{2, or} a mixed gas of CF ₄ and Cl ₂ can be used.

In this embodiment, when etching the second conductive film 512 formed of tungsten (W), a mixed gas in which CF ₄ , Cl ₂ , and O ₂ are flowed at a flow rate of 50 sccm, 50 sccm, and 20 sccm is used. The first conductive film 511 formed of tantalum nitride (TaN) is isotropically etched by flowing Cl ₂ at 60 sccm.

  Through the above steps, gate electrodes 563a to 563c having first layer gate electrodes (lower gate electrodes) 561a to 561c and second layer gate electrodes (upper gate electrodes) 560a to 560c are formed.

  Note that the gate wiring is formed separately from the gate electrodes 563a to 563c, and the gate electrodes 563a to 563c are connected to the gate wiring.

  Then, an impurity imparting one conductivity (n-type or p-type conductivity) is added to the island-shaped semiconductor films 507 to 509 using the gate electrodes 563a to 563c as a mask. In this impurity addition, the impurity is not only added to the region where the mask does not exist, but also enters the region below the second layer gate electrode 560 and is introduced to the end of the first layer gate electrode 561.

In this example, when an n-channel TFT is manufactured, an applied voltage of 40 to 80 keV, for example, 60 keV, a dose of 1.0 × 10 ^{12 to} 2.5 × 10 ¹⁴ cm ⁻ is used using phosphine (PH ₃ ). ^2. For example, phosphorus (P) is introduced into the island-shaped semiconductor film at 2.7 × 10 ¹³ cm ⁻² . In addition, channel formation regions 522 and 527 are formed during the impurity introduction.

When a p-channel TFT is manufactured, diborane (B ₂ H ₆ ) is applied with an applied voltage of 20 to 50 keV, for example 45 keV, and a dose amount of 1 × 10 ^{15 to} 5 × 10 ¹⁷ cm ⁻² , for example 2.0 × 10 ^16. Boron (B) is introduced into the island-shaped semiconductor film under the condition of cm ⁻² . Accordingly, a source region or a drain region 523 of the p-channel TFT and a channel formation region 524 are formed when this impurity is introduced (see FIG. 11C).

  Next, as shown in FIG. 12A, insulating films, so-called side walls 515 to 517 are formed so as to cover the side surfaces of the first layer gate electrodes 561a to 561c and the second layer gate electrodes 560a to 560c. The sidewall can be formed using an insulating film containing silicon by a plasma CVD method or a low pressure thermal CVD (LPCVD) method.

In this embodiment, a silicon oxide film (SiON) containing nitrogen is formed by a plasma CVD method using SiH ₄ and N ₂ O as a source gas at a pressure of 133 Pascal (133 Pa), and then by a low pressure thermal CVD (LPCVD) method. SiH the raw material gas _4, N ₂ O and using pressure 266 Pascals (266 Pa), at a temperature 400 ° C., to form a silicon oxide film (SiON) containing nitrogen. Thereafter, a silicon oxide film (SiON) containing nitrogen is etched, whereby a sidewall 221 having a tapered shape is formed. At that time, the insulating film 510 is also etched to form gate insulating films 570 to 572.

The etching conditions for forming the sidewalls using the low pressure thermal CVD method are as follows. As a first etching condition, plasma is generated over several seconds, for example, 3 seconds, using CHF ₃ and He as source gases. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Etching gas ions can be accelerated by a voltage applied to the electrode on which the substrate is disposed. As a second etching condition, a voltage is applied for several tens of seconds, for example, 60 seconds, using CHF ₃ and He as a source gas. The etching time can be determined so as to end when the height of the film to be etched reaches a predetermined value (100 nm in this embodiment). At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. As a third etching condition, CHF ₃ or He is used as a source gas, and a voltage is applied for several tens of seconds, for example, 31 seconds from the time when the surface film to be etched disappears. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 50 W, and the electrode on which the substrate is disposed is 450 W.

Etching conditions for forming a sidewall using the plasma CVD method are as follows. As a first etching condition, plasma is generated over several seconds, for example, 3 seconds, using CHF ₃ and He as source gases. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. As a second etching condition, a voltage of several tens of seconds, for example, 50 seconds is applied using CHF ₃ and He as a source gas. The etching time can be determined so as to end when the height of the film to be etched reaches 100 nm. At this time, the electrode on the side facing the substrate placed in the film formation apparatus is set to 900 W, and the electrode on which the substrate is placed is set to 150 W. As the third etching condition, CHF ₃ and He are used as the source gas, and a voltage is applied for several tens of seconds, for example, 30 seconds from the time when the surface film to be etched disappears. At this time, the electrode on the side facing the substrate disposed in the film forming apparatus is 50 W, and the electrode on which the substrate is disposed is 300 W.

In the present embodiment, first, as a first etching condition, plasma is generated over several seconds, for example, 3 seconds while flowing the source gases CHF ₃ and He at flow rates of 50 sccm and 100 sccm, respectively. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Next, as a second etching condition, a voltage is applied for several tens of seconds, for example, 60 seconds while the source gases CHF ₃ and He are supplied at flow rates of 7.5 sccm and 142.5 sccm, respectively. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 475 W, and the electrode on which the substrate is disposed is 300 W. Then, as a third etching condition, a voltage is applied for several tens of seconds, for example, 20 seconds from the time when it is considered that the film on the surface to be etched disappears while the source gases CHF ₃ and He are supplied at a flow rate of 48 sccm and 152 sccm. At this time, the electrode on the side facing the substrate disposed in the film formation apparatus is 50 W, and the electrode on which the substrate is disposed is 450 W.

  The end portion of the sidewall formed as described above does not need to have a taper shape, and preferably has a rectangular shape. This is because when the end portion of the sidewall is formed in a rectangular shape, it is possible to prevent the impurity concentration added next from having a concentration gradient under the sidewall.

Then sidewalls 515 to 517, a gate electrode 563a~563c as a mask, the phosphorus (P), the applied voltage 10～40KeV, for example 20 keV, a dose of ^{1.0 × 10 15 ~2.5 × 10 16} cm -2 For example, it is introduced into the island-shaped semiconductor films 507 to 509 at 3.0 × 10 ¹⁵ cm ⁻² . As a result, source and drain regions 520 and 525 of the n-channel TFT are formed. Low-concentration impurity regions 521 and 526 are formed under the sidewalls 515 to 517, respectively (see FIG. 12B).

In this embodiment, the source or drain regions 520 and 525 of the n-channel TFT each contain phosphorus (P) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ . Each of the low-concentration impurity regions 521 and 526 of the n-channel TFT contains phosphorus (P) at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ . Furthermore, boron (B) is contained in the source or drain region 523 of the p-channel TFT at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ .

  Next, a first interlayer insulating film 530 is formed to cover the island-shaped semiconductor films 507 to 509, the gate insulating films 570 to 572, the gate electrodes 563a to 563c, and the sidewalls 515 to 517 (see FIG. 12C).

  As the first interlayer insulating film 530, an insulating film containing silicon, for example, a silicon oxide film (SiOx), a silicon nitride film (SiN), a silicon oxide film containing nitrogen (SiON), using plasma CVD or sputtering, Or it forms with the laminated film. Needless to say, the first interlayer insulating film 530 is not limited to a silicon oxide film or silicon nitride film containing nitrogen, or a laminated film thereof, and other insulating films containing silicon may be used as a single layer or a laminated structure. .

  In this embodiment, after introducing impurities, a silicon oxide film containing nitrogen (SiON film) is formed to a thickness of 50 nm by plasma CVD, and heated in a nitrogen atmosphere at 550 ° C. for 4 hours to activate the impurities. Alternatively, after forming the silicon oxide film containing nitrogen, the impurity may be activated by a laser irradiation method.

  Next, a 100 nm silicon nitride film (SiN film) is formed by plasma CVD. Next, the whole is heated at 410 ° C. for 1 hour, and hydrogen is released by releasing hydrogen from the silicon nitride film. After hydrogenation, a silicon oxide film (SiON film) containing nitrogen is further formed to 600 nm. The stacked film of the silicon oxide film containing nitrogen, the silicon nitride film, and the silicon oxide film containing nitrogen is the first interlayer insulating film 530.

  Next, a second interlayer insulating film 601 that functions as a planarizing film is formed over the first interlayer insulating film 530.

  As the second interlayer insulating film 601, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), a bond of silicon (Si) and oxygen (O) (Si- A material having a skeletal structure composed of (O—Si bond) and containing at least hydrogen as a substituent, or having at least one of fluorine, alkyl group, and aromatic hydrocarbon as a substituent, a so-called siloxane, and a laminate thereof A structure can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

  In this embodiment, siloxane is formed as the second interlayer insulating film 601 by a spin coating method.

  The first interlayer insulating film 530 and the second interlayer insulating film 601 are etched to form contact holes that reach the island-shaped semiconductor films 507 to 509.

  Next, a metal film is formed over the second interlayer insulating film 601 through a contact hole, and the metal film is patterned to form electrodes 602 to 606 (see FIG. 13A).

  As the metal film, a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film using these elements may be used. In this embodiment, a titanium film (Ti), a titanium nitride film (TiN), a silicon-aluminum alloy film (Al-Si), and a titanium film (Ti) are laminated to 60 nm, 40 nm, 300 nm, and 100 nm, respectively. The electrodes 602 to 606 are formed by patterning and etching into a shape.

  The electrodes 602 to 606 may be formed of an aluminum alloy film containing at least one element selected from nickel, cobalt, and iron, and carbon. Such an aluminum alloy film can prevent mutual diffusion of silicon and aluminum even when it comes into contact with silicon. In addition, since such an aluminum alloy film does not cause an oxidation-reduction reaction even when it comes into contact with a transparent conductive film, for example, an ITO (Indium Tin Oxide) film, both can be brought into direct contact with each other. Furthermore, such an aluminum alloy film is useful as a wiring material because of its low specific resistance and excellent heat resistance.

  In this embodiment, the electrodes 602 to 606 are connected to wirings formed separately from the electrodes, respectively, but the electrodes and wirings may be integrally formed.

  Note that the electrode 603 electrically connects the source or drain region 520 of the n-channel TFT 540 and the source or drain region 523 of the p-channel TFT 541.

  Next, a third interlayer insulating film 610 is formed on the second interlayer insulating film 601 and the electrodes 602 to 606. Note that the third interlayer insulating film 610 can be formed using a material similar to that of the second interlayer insulating film 601.

Next, a resist mask is formed using a photomask, and a part of the third interlayer insulating film 610 is removed by dry etching to form an opening (a contact hole is formed). In this contact hole formation, carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ), and helium (He) were used as etching gases, and CF ₄ , O ₂ , and He were used at flow rates of 50 sccm, 50 sccm, and 30 sccm, respectively. . Note that the bottom of the contact hole reaches the electrode 606.

  Next, after removing the resist mask, a third conductive film is formed over the entire surface. Next, the third conductive film is patterned using a photomask, so that the pixel electrode 623 electrically connected to the electrode 606 is formed (FIG. 13B). In this embodiment, since a reflective liquid crystal display panel is manufactured, light reflection of Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc. is performed by the pixel electrode 623 sputtering method. It may be formed using a metal material having properties.

When a transmissive liquid crystal display panel is manufactured, a transparent conductive film such as indium tin oxide (ITO), indium tin oxide containing silicon oxide, zinc oxide (ZnO), or tin oxide (SnO ₂ ) is used. A pixel electrode 623 is formed.

  FIG. 15 is an enlarged top view of a part of the pixel portion. Further, FIG. 15 shows a state in which the pixel electrode is being formed, and shows a state in which the pixel electrode is formed in the left pixel, but the pixel electrode is not formed in the right pixel. In FIG. 15, a diagram cut along a solid line A-A ′ corresponds to the cross section of the pixel TFT 542 in FIG. 13B, and the same reference numerals are used for portions corresponding to FIG. 13B. In addition, a capacitor wiring 631 is provided, and the storage capacitor is formed of the pixel electrode 623 and the capacitor wiring 631 overlapping the pixel electrode, using the first interlayer insulating film 530 as a dielectric.

  In this embodiment, in the region where the pixel electrode 623 and the capacitor wiring 631 overlap, the second interlayer insulating film 601 and the third interlayer insulating film 610 are etched, and the storage capacitor has the pixel electrode 623, the first interlayer insulating film 530, and A capacitor wiring 631 is formed. However, if the second interlayer insulating film 601 and the third interlayer insulating film 610 can also be used as dielectrics, the second interlayer insulating film 601 and the third interlayer insulating film 610 need not be etched. In that case, the first interlayer insulating film 530, the second interlayer insulating film 601 and the third interlayer insulating film 610 function as a dielectric. Alternatively, only the third interlayer insulating film 610 may be etched, and the first interlayer insulating film 530 and the second interlayer insulating film 601 may be used as a dielectric.

  In FIG. 15, the gate electrode 563c is connected to a gate wiring 650 formed separately from the gate electrode 563c. Further, although the electrode 605 is integrally formed with the source wiring, the electrode 605 and the source wiring may be formed separately and connected to each other.

  Through the above steps, a TFT substrate for a liquid crystal display panel in which the CMOS circuit 620 and the pixel electrode 623 including the top-gate pixel TFT 542, the top-gate n-channel TFT 540, and the p-channel TFT 541 are formed on the substrate 500 is obtained. Complete. In this embodiment, a top gate type TFT is formed, but a bottom gate type TFT can be used as appropriate.

  Next, an alignment film 624 a is formed so as to cover the pixel electrode 623. Note that the alignment film 624a may be formed using a droplet discharge method, a screen printing method, or an offset printing method. Thereafter, a rubbing process is performed on the surface of the alignment film 624a.

  The counter substrate 625 is provided with a color filter composed of a colored layer 626a, a light shielding layer (black matrix) 626b, and an overcoat layer 627, a counter electrode 628 composed of a transparent electrode or a reflective electrode, and an alignment film thereon. 624b is formed. Then, a sealing material which is a closed pattern is formed so as to surround a region overlapping with the pixel portion by a droplet discharge method (see FIG. 14). Here, an example in which a sealing material having a closed pattern is drawn in order to drop the liquid crystal 629 is shown. However, a dip type (in which a liquid crystal is injected using a capillary phenomenon after providing a sealing pattern having an opening and attaching a TFT substrate) A pumping type) may be used.

  Next, the liquid crystal 629 is dropped under reduced pressure so that bubbles do not enter, and both substrates are bonded to each other. The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern. As the alignment mode of the liquid crystal, a TN mode in which the alignment of liquid crystal molecules is twisted by 90 ° from the incident light to the emitted light is often used. When a TN mode liquid crystal display device is manufactured, the substrates are bonded so that the rubbing directions of the substrates are orthogonal.

  Note that the distance between the pair of substrates may be maintained by dispersing spherical spacers, forming columnar spacers made of resin, or including a filler in the sealing material. The columnar spacer is an organic resin material mainly containing at least one of acrylic, polyimide, polyimide amide, and epoxy, or any one material of silicon oxide, silicon nitride, and silicon oxide containing nitrogen, or a laminate thereof. It is an inorganic material made of a film.

  Next, the substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the dividing step can be omitted by attaching a counter substrate that has been cut in advance.

  Then, an FPC (Flexible Printed Circuit) is attached through an anisotropic conductor layer using a known technique. The liquid crystal module is completed through the above steps. If necessary, an optical film is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the active matrix substrate and the counter substrate.

  As described above, in this embodiment, a liquid crystal display device can be manufactured using TFTs that can be driven at high speed. The liquid crystal display device manufactured in this embodiment can also be used as a display portion of various electronic devices.

  In this embodiment, the top gate type TFT is used as the TFT. However, the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. . Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  In addition, this embodiment can be freely combined with any description in Embodiment Mode and Embodiments 1 and 2 if necessary.

  In this embodiment, an example in which a droplet discharge method is used for liquid crystal dropping is described. In this example, a large panel 1110 is used, and examples of manufacturing four panels are shown in FIGS. 16 (A) to 16 (D), FIGS. 17 (A) to 17 (D), and FIGS. As shown in FIG.

  FIG. 16A is a cross-sectional view in the middle of forming a liquid crystal layer by a dispenser (or an ink jet). The nozzle 1118 is discharged, jetted, or dropped. The droplet discharge device 1116 is moved in the direction of the arrow in FIG. Although the example in which the nozzle 1118 is moved is shown here, the liquid crystal layer may be formed by fixing the nozzle and moving the substrate.

  FIG. 16B shows a perspective view. The liquid crystal material 1114 is selectively ejected, jetted, or dropped only in the region surrounded by the sealing material 1112, and the dropping surface 1115 is moved in accordance with the nozzle scanning direction 1113.

  16C and 16D are enlarged cross-sectional views of a portion 1119 surrounded by a dotted line in FIG. When the viscosity of the liquid crystal material is high, the liquid crystal material is continuously discharged and attached while being connected as shown in FIG. On the other hand, when the viscosity of the liquid crystal material is low, the liquid crystal material is discharged intermittently, and droplets are dropped as shown in FIG.

  In FIGS. 16C and 16D, 1110 indicates a large area substrate, 1120 indicates a pixel TFT, and 1121 indicates a pixel electrode. The pixel portion 1111 includes pixel electrodes arranged in a matrix, switching elements connected to the pixel electrodes, here, top gate TFTs, and storage capacitors.

  Here, the flow of panel manufacture will be described below with reference to FIGS. 17 (A) to 17 (D).

  First, a first substrate 1035 having a pixel portion 1034 formed on an insulating surface is prepared. The first substrate 1035 is previously subjected to formation of an alignment film, rubbing treatment, spherical spacer dispersion, columnar spacer formation, or color filter formation. Next, as illustrated in FIG. 16A, a sealant 1032 is formed at a predetermined position (a pattern surrounding the pixel portion 1034) with a dispenser device or an inkjet device over the first substrate 1035 in an inert gas atmosphere or under reduced pressure. . The translucent sealing material 1032 includes a filler (diameter: 6 μm to 24 μm) and a viscosity of 40 to 400 Pa · s. It is preferable to select a sealing material that does not dissolve in the liquid crystal that comes into contact later. As the sealing material, an acrylic photo-curing resin or an acrylic thermosetting resin may be used. Further, since the sealing material 1032 is a simple sealing pattern, the sealing material 1032 can be formed by a printing method.

  Next, a liquid crystal 1033 is dropped in an area surrounded by the sealant 1032 by an inkjet method (FIG. 17B). As the liquid crystal 1033, a known liquid crystal material having a viscosity that can be discharged by an inkjet method may be used. In addition, since the viscosity of the liquid crystal material can be set by adjusting the temperature, it is suitable for the ink jet method. A necessary amount of the liquid crystal 1033 can be held in a region surrounded by the sealant 1032 without waste by an inkjet method.

  Next, the first substrate 1035 provided with the pixel portion 1034 and the second substrate 1031 provided with the counter electrode and the alignment film are attached under reduced pressure so that bubbles do not enter. Here, the sealing material 1032 is cured by performing ultraviolet irradiation and heat treatment at the same time as bonding. In addition to ultraviolet irradiation, heat treatment may be performed.

  FIG. 18 shows an example of a bonding apparatus capable of performing ultraviolet irradiation or heat treatment at the time of bonding or after bonding.

  In FIG. 18, 1041 is a first substrate support base, 1042 is a second substrate support base, 1044 is a window, 1048 is a lower surface plate, and 1049 is a light source. In FIG. 18, the same reference numerals are used for portions corresponding to FIG.

  The lower surface plate 1048 incorporates a heater and hardens the sealing material. The second substrate support is provided with a window 1044 so that ultraviolet light or the like from the light source 1049 can pass therethrough. Although not shown here, the substrate is aligned through the window 1044. In addition, the second substrate 1031 to be the counter substrate is cut into a desired size in advance, and is fixed to the second substrate support 1042 with a vacuum chuck or the like. FIG. 18A shows a state before bonding.

  At the time of bonding, after the first substrate support base 1041 and the second substrate support base 1042 are lowered, the first substrate 1035 and the second substrate 1031 are bonded together by applying pressure, and cured by irradiating ultraviolet light as it is. Let The state after bonding is shown in FIG.

  Next, the first substrate 1035 is cut using a cutting device such as a scriber device, a breaker device, or a roll cutter (see FIG. 17D). Thus, four panels can be manufactured from one substrate. Then, the FPC is pasted using a known technique.

  Note that a glass substrate or a plastic substrate can be used as the first substrate 1035 and the second substrate 1031.

  Through the above process, a liquid crystal display device using a large-area substrate is manufactured.

  In addition, this embodiment can be freely combined with any description in the embodiment mode and Embodiments 1 and 2 if necessary.

  In this embodiment, an example of manufacturing a dual emission type EL (Electro-Luminescence) display device using the present invention will be described with reference to FIGS. 19A to 19B, FIG. 20 and FIG. I will explain.

  First, steps up to the impurity introduction shown in FIG. In addition, the same thing as Example 3 is represented with the same code | symbol. In addition, as for the manufacturing conditions, manufacturing steps, film forming materials, and the like in this example, those similar to those in Example 3 are used unless otherwise specified.

  However, in this embodiment, a p-type impurity such as boron (B) is introduced into the island-shaped semiconductor film 509 that becomes an active layer of the pixel TFT 2002 in a later step. In addition, for the n-channel TFTs 2000 and 2001 serving as TFTs of the driving circuit for driving the pixel TFT 2002, n-type impurities such as phosphorus (P) are introduced into the island-like semiconductor films 507 and 508 serving as the active layers. (See FIG. 19A).

  Next, sidewalls 515 to 517 are formed in the same manner as in Example 3, and n-type impurities such as phosphorus (P) are introduced at high concentration into the island-like semiconductor films 507 and 508 serving as active layers of the n-channel TFT. (See FIG. 19B).

  As described above, in the n-channel TFT 2000, the source or drain region 650, the low-concentration impurity region 651, and the channel formation region 652 are formed. In the n-channel TFT 2001, a source or drain region 653, a low concentration impurity region 654, and a channel formation region 655 are formed. Further, in the p-channel TFT 2002, a source or drain region 656 and a channel formation region 657 are formed.

  In this embodiment, the p-channel TFT 2002 is used as a pixel TFT of the dual emission EL display device. The n-channel TFTs 2000 and 2001 are used as TFTs of a driving circuit that drives the pixel TFT 2002. However, the pixel TFT is not necessarily a p-channel TFT, and an n-channel TFT may be used. Further, the driving circuit does not need to be a circuit in which a plurality of n-channel TFTs are combined, and is a circuit in which an n-channel TFT and a p-channel TFT are complementarily combined, or a circuit in which a plurality of p-channel TFTs are combined. May be.

  After that, based on the method described in Example 3, a first interlayer insulating film 530 and a second interlayer insulating film 601 are formed on the first interlayer insulating film.

  Next, a third interlayer insulating film 2302 having a light-transmitting property is formed over the second interlayer insulating film 601. The third interlayer insulating film 2302 is provided as an etching stopper film for protecting the planarization film that is the second interlayer insulating film 601 when the pixel electrode 2400 is patterned in a later step. However, when the pixel electrode 2400 is patterned, the third interlayer insulating film 2302 is not necessary if the second interlayer insulating film 601 becomes an etching stopper film.

Next, contact holes are formed in the first interlayer insulating film 530, the second interlayer insulating film 601, and the third interlayer insulating film 2302 using a mask. Next, after removing the mask and forming a conductive film (a laminated film of TiN, Al and TiN), etching (dry etching with a mixed gas of BCl ₃ and Cl ₂ ) is performed using another mask, Wirings 660 to 665 (TFT source wiring and drain wiring, current supply wiring, etc.) are formed. Note that TiN is one of the materials having good adhesion to the high heat resistant planarization film. In addition, it is preferable that the N content of TiN be less than 44% in order to make good ohmic contact with the source region or drain region of the TFT.

  Next, the pixel electrode (transparent electrode in this embodiment) 2400, that is, the anode of the organic light emitting element is formed in a thickness of 10 nm to 800 nm using a new mask. As the pixel electrode, in addition to indium tin oxide (ITO), for example, indium tin oxide containing Si element or IZO (Indium Zinc Oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, etc. A transparent conductive material having a high work function (work function of 4.0 eV or more) can be used.

  Next, an insulator 2600 (referred to as a bank, a partition, a barrier, a bank, or the like) is formed to cover the edge portion of the pixel electrode with a new mask. As the insulator 2600, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene) obtained by a coating method, or an SOG film (for example, an SiOx film containing an alkyl group) Is used in a film thickness range of 0.8 μm to 1 μm.

  Next, layers 2401, 402, 2403, 2404, and 2405 containing an organic compound are formed by an evaporation method or a coating method. Note that in order to improve the reliability of the light-emitting element, it is preferable to perform deaeration by performing vacuum heating before the formation of the layer 2401 containing an organic compound. For example, before vapor deposition of the organic compound material, it is desirable to perform a heat treatment at 200 ° C. to 300 ° C. in a reduced pressure atmosphere or an inert atmosphere in order to remove gas contained in the substrate. Note that when the interlayer insulating film and the partition walls are formed of SiOx films having high heat resistance, higher heat treatment (410 ° C.) can be applied.

  Then, using a vapor deposition mask, molybdenum oxide (MoOx) and 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (α-NPD) are selectively formed on the pixel electrode. And rubrene are co-evaporated to form a layer 2401 (first layer) containing a first organic compound.

  In addition to MoOx, a material having a high hole injection property such as copper phthalocyanine (CuPC), vanadium oxide (VOx), ruthenium oxide (RuOx), or tungsten oxide (WOx) can be used. In addition, a layer containing a first organic compound formed by applying a high hole-injecting polymer material such as poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) by a coating method You may use as 2401.

  Next, α-NPD is selectively deposited using a deposition mask, so that a hole-transporting layer (second layer) 2402 is formed over the layer 2401 containing the first organic compound. In addition to α-NPD, 4,4′-bis [N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N , N-diphenyl-amino) -triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviation: A material having a high hole transporting property typified by an aromatic amine compound such as MTDATA) can be used.

  Next, a light-emitting layer 2403 (third layer) is selectively formed. In order to obtain a full-color display device, the vapor deposition mask is aligned for each of the emission colors (R, G, B) to selectively deposit each.

Next, Alq ₃ (tris (8-quinolinolato) aluminum) is selectively deposited using a deposition mask, so that an electron-transporting layer (fourth layer) 2404 is formed over the light-emitting layer 2403. In addition to Alq ₃ , tris (5-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl) A material having a high electron transport property typified by a metal complex having a quinoline skeleton such as -8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq) or a benzoquinoline skeleton can be used. In addition, bis [2- (2-hydroxyphenyl) -benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) -benzothiazolate] zinc (abbreviation: Zn ( Metal complexes having an oxazole or thiazole ligand such as BTZ) ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5 (4-Biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2 , 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used as the electron-transport layer 2404 because of their high electron-transport properties.

Next, 4,4-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation: BzOs) and lithium (Li) are co-evaporated to cover the electron transport layer and the insulator, and an electron injection layer is formed over the entire surface. (Fifth layer) 2405 is formed. By using the benzoxazole derivative (BzOS), damage due to the sputtering method at the time of forming the transparent electrode 2406 performed in a later process is suppressed. In addition to BzOs: Li, a material having a high electron-injection property such as an alkali metal or alkaline earth metal compound such as CaF ₂ , lithium fluoride (LiF), and cesium fluoride (CsF) can be used. . In addition, a mixture of Alq ₃ and magnesium (Mg) can also be used.

  Next, the transparent electrode 2406, that is, the cathode of the organic light emitting element is formed over the fifth layer 2404 in a thickness of 10 nm to 800 nm. As the transparent electrode 2406, in addition to indium tin oxide (ITO), for example, indium tin oxide containing Si element or IZO (Indium Zinc Oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide. Can be used.

  As described above, a light emitting element is manufactured. The materials for the anode, the layer containing the organic compound (first to fifth layers), and the cathode constituting the light-emitting element are appropriately selected, and the thicknesses of the materials are also adjusted. It is desirable that the same material is used for the anode and the cathode, and the film thickness is approximately the same, preferably approximately 100 nm.

  Further, if necessary, a transparent protective layer 2407 is formed to cover the light emitting element and prevent moisture from entering. As the transparent protective layer 2407, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen (SiNO film (composition ratio N> O)), or a silicon oxide film containing nitrogen (SiON film) obtained by sputtering or CVD is used. (Composition ratio N <O)), a thin film mainly containing carbon (for example, a DLC film or a CN film), or the like can be used (see FIG. 19C).

  Next, the second substrate 2500 and the substrate 500 are attached to each other using a sealing material containing a gap material for securing the substrate interval. As the second substrate 2500, a light-transmitting glass substrate or quartz substrate may be used. In addition, a desiccant may be disposed as a gap (inert gas) between the pair of substrates, or a transparent sealing material (such as an ultraviolet curing or thermosetting epoxy resin) is filled between the pair of substrates. Also good.

  In the light-emitting element, a pixel electrode 2407 is formed of a light-transmitting material, and light can be collected from one light-emitting element in two directions, that is, from both sides.

  With the panel configuration described above, light emission from the upper surface and light emission from the lower surface can be made substantially the same.

  Finally, optical films (polarizing plates or circularly polarizing plates) 2501 and 2502 are provided to improve contrast (see FIG. 20).

  FIG. 21 shows an example in which the pixel TFTs in the pixel portion are separately formed by RGB. In the pixel for red (R), a pixel TFT 2002R is connected to the pixel electrode 2400R, and the first layer 2401R, the second layer (hole transport layer) 2402R, the third layer (light emitting layer) 2403R, A fourth layer (electron transport layer) 2404R and a fifth layer (electron injection layer) 2405R are formed. In the pixel for green (G), a pixel TFT 2002G is connected to the pixel electrode 2400G, and the first layer 2401G, the second layer (hole transport layer) 2402G, and the third layer (light emitting layer) 2403G. A fourth layer (electron transport layer) 2404G and a fifth layer (electron injection layer) 2405G are formed. Further, in the blue (B) pixel, a pixel TFT 2002B is connected to the pixel electrode 2400B, and the first layer 2401B, the second layer (hole transport layer) 2402B, and the third layer (light emitting layer) 2403B. A fourth layer (electron transport layer) 2404B and a fifth layer (electron injection layer) 2405B are formed.

Among these, for the light emitting layers 2403R, 2403G, and 2403B, a material such as Alq ₃ : DCM or Alq ₃ : rubrene: BisDCJTM is used for the light emitting layer 2403R that emits red light. For the light-emitting layer 2403G that emits green light, a material such as Alq ₃ : DMQD (N, N′-dimethylquinacridone) or Alq ₃ : coumarin 6 is used. For the light-emitting layer 2403B that emits blue light, a material such as α-NPD or tBu-DNA is used.

  In this embodiment, the top gate type TFT is used as the TFT. However, the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. . Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  In the present embodiment, a dual emission panel (dual emission panel) has been described. However, a configuration of a top emission panel (top emission panel) or a bottom emission panel (bottom emission panel) which is a single emission panel is used. Of course.

  In order to manufacture a top emission type panel, the anode of the organic light emitting element may be formed of a light shielding material instead of a transparent electrode. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. . In addition, the anode of the organic light emitting element may be a single layer such as a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film, or a laminate of three or more layers may be used.

  The cathode of the top emission panel is preferably transparent or translucent, and can be formed using the same material as the pixel electrode.

  In order to manufacture a bottom emission panel, the anode of the organic light emitting element can be formed using the same material as the pixel electrode.

On the other hand, as the cathode of the bottom emission panel, a light-shielding material having a small work function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used.

  Note that when the top emission panel or the bottom emission panel is manufactured, the layer containing the organic compound in the organic light emitting element may be appropriately changed according to the material of each anode or cathode.

  The light emitted from the light emitting element includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. One or both of them can be used in the examples.

  In addition, although it has already been described that this example is implemented using the steps of Example 3, it can be freely combined with any description of the embodiment and Examples 1 and 2 if necessary. is there.

  In this embodiment, an example of manufacturing a CPU (Central Processing Unit) using the present invention is shown in FIGS. 22 (A) to 22 (B), FIG. 23, FIG. 24 (A) to FIG. B) and FIG. 25 (A) to FIG. 25 (C).

  First, the manufacturing steps similar to those of Example 3 are performed until the formation of the first interlayer insulating film in FIG. In addition, the same thing as Example 3 is represented with the same code | symbol. In addition, as for the manufacturing conditions, manufacturing steps, film forming materials, and the like in this example, those similar to those in Example 3 are used unless otherwise specified.

  However, in this embodiment, n-channel TFTs 3201 and 3203 and p-channel TFTs 3202 and 3204 are formed on the substrate 3000. 22A, an n-channel TFT 3201 includes an island-shaped semiconductor film 3005, a gate insulating film 3020, a first layer gate electrode (lower gate electrode) 3050, and a second layer gate electrode (upper gate electrode) over a base film 3001. ) 3040 made of 3040 and sidewalls 3030 and 3031. In addition, the island-shaped semiconductor film 3005 includes a source or drain region 3010, a low-concentration impurity region 3011, and a channel formation region 3012.

  In addition, the p-channel TFT 3202 includes a gate including an island-shaped semiconductor film 3006, a gate insulating film 3021, a first layer gate electrode (lower gate electrode) 3051, and a second layer gate electrode (upper gate electrode) 3041 on a base film 3001. An electrode 3061 and sidewalls 3032 and 3033 are provided. In addition, the island-shaped semiconductor film 3006 includes a source or drain region 3013 and a channel formation region 3014.

  The n-channel TFT 3203 includes a gate electrode 3062 including an island-shaped semiconductor film 3007, a gate insulating film 3022, a first layer gate electrode (lower gate electrode) 3052, and a second layer gate electrode (upper gate electrode) 3042 on a base film 3001. Side walls 3034 and 3035 are provided. The island-shaped semiconductor film 3007 includes a source or drain region 3015, a low concentration impurity region 3016, and a channel formation region 3017.

  Further, the p-channel TFT 3204 includes a gate formed of an island-shaped semiconductor film 3008, a gate insulating film 3023, a first layer gate electrode (lower gate electrode) 3053, and a second layer gate electrode (upper gate electrode) 3043 on the base film 3001. An electrode 3063 and sidewalls 3036 and 3037 are provided. In addition, the island-shaped semiconductor film 3008 includes a source or drain region 3018 and a channel formation region 3019.

  The first interlayer insulating film 3100 formed so as to cover the island-shaped semiconductor films 3005 to 3008, the gate insulating films 3020 to 3023, the gate electrodes 3060 to 3063, and the sidewalls 3030 to 3037 may be an insulating film containing nitrogen. In this embodiment, a 100 nm silicon nitride film is formed by plasma CVD.

  After the formation of the first interlayer insulating film 3100, heat treatment is performed to perform hydrogenation. In this embodiment, heat treatment is performed at 410 ° C. for 1 hour in a nitrogen atmosphere. As a result, dangling bonds of the silicon oxide film and the silicon film can be terminated by hydrogen released from the silicon nitride film.

Then, a second interlayer insulating film 3101 is formed so as to cover the first interlayer insulating film 3100. The second interlayer insulating film 3101 includes an inorganic material (silicon oxide, silicon nitride, silicon oxide containing nitrogen, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene). A material having a skeletal structure composed of a bond of silicon (Si) and oxygen (O) and containing at least hydrogen as a substituent or having at least one of fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent , So-called siloxanes, and stacked structures thereof can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used. For example, in the case where positive photosensitive acrylic is used as the organic material, an opening having a curvature can be formed at the upper end when the photosensitive organic resin is etched by an exposure process in a photolithography process. In this embodiment, a silicon oxide film containing nitrogen formed by a plasma CVD method using SiH ₄ and N ₂ O as a source gas is formed to a thickness of 600 nm. At this time, the temperature of the substrate is heated to 300 to 450 ° C., and in this embodiment, heated to 400 ° C.

Next, a contact hole is formed in the second interlayer insulating film 3101 using a resist mask. This contact hole is formed by dry etching. Carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ), helium (He) are used as etching gases, and CF ₄ , O ₂ , and He are 50 sccm, 50 sccm, and 30 sccm, respectively. The flow rate was used.

As shown in FIG. 22B, wirings 3301 to 3308 are formed in the first interlayer insulating film 3100 and the second interlayer insulating film 3101 to be connected to the source region or the drain region through contact holes. At the same time, a wiring connected to the gate electrode is formed. At this time, since the diameter of the contact hole is about 1.0 μm, the contact hole is preferably formed vertically. Therefore, the resist end is intentionally formed so as not to have a tapered shape. If the selection ratio between the resist and the insulating film for forming the contact hole is high, the resist end may be tapered. In this embodiment, since the silicon oxide film containing nitrogen is used for the second interlayer insulating film 3101, a resist mask formed so that the end portion is vertical, that is, intentionally not tapered, Contact holes are formed by dry etching. At this time, the actual resist end may be tapered. Etching is performed using CHF ₃ and He as an etching gas, with a first etching time of several seconds, for example, 3 seconds, a second etching time of 100 to 130 seconds, for example, 117 seconds, and a third etching time of 200 to 270 seconds, for example, 256 seconds. Do. At this time, the flow rate of the etching gas can be determined according to the etching state of the contact hole.

  Note that in the case where an organic material or siloxane is used for the second interlayer insulating film 3101, a mask having higher hardness than a resist mask, for example, a hard mask formed from an inorganic material such as a silicon oxide film in order to make the side surface of the contact hole vertical. Should be used.

Thereafter, the resist mask is removed by O ₂ ashing or resist stripping solution.

  Then, wirings 3301 to 3308 are formed in the contact holes. For the wiring, a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film using these elements may be used. In this embodiment, a titanium film (Ti), a titanium nitride film (TiN), a titanium-aluminum alloy film (Al-Si), and a titanium film (Ti) are laminated to 60 nm, 40 nm, 300 nm, and 100 nm, respectively, and then desired. The wiring, that is, the source electrode and the drain electrode are formed by patterning and etching into the shape of.

  Further, the wirings 3301 to 3308 may be formed of an aluminum alloy film containing at least one element selected from nickel, cobalt, and iron, and carbon. Such an aluminum alloy film can prevent mutual diffusion of silicon and aluminum even when it comes into contact with silicon. In addition, since such an aluminum alloy film does not cause an oxidation-reduction reaction even when it comes into contact with a transparent conductive film, for example, an ITO (Indium Tin Oxide) film, both can be brought into direct contact with each other. Furthermore, such an aluminum alloy film is useful as a wiring material because of its low specific resistance and excellent heat resistance.

  Note that in the present invention, a p-channel thin film transistor may have an LDD structure. Further, an n-channel thin film transistor and a p-channel thin film transistor may have a so-called GOLD structure in which a low-concentration impurity region overlaps with a gate electrode instead of the LDD structure.

  A semiconductor device having the thin film transistor formed as described above, a CPU in this embodiment, can be manufactured, and a driving voltage of 5 V and a driving frequency of 30 MHz are possible.

  Further, the configuration of the CPU of this embodiment will be described with reference to a block diagram.

  23 includes an arithmetic circuit (ALU) 3601, an arithmetic circuit control unit (ALU Controller) 3602, an instruction analysis unit (Instruction Decoder) 3603, and an interrupt control unit (Interrupt Controller). 3604, Timing Controller 3605, Register 3606, Register Controller 3607, Bus Interface (Bus I / F) 3608, Rewriteable ROM 3609, ROM Interface (ROM I / F) 3620. The ROM 3609 and the ROM I / F 620 may be provided in separate chips.

  Needless to say, the CPU illustrated in FIG. 23 is just an example in which the configuration is simplified, and an actual CPU may have various configurations depending on the application.

  An instruction input to the CPU via the bus interface 3608 is input to the instruction analysis unit 3603 and decoded, and then input to the control unit 3602 for the arithmetic circuit, the interrupt control unit 3604, the register control unit 3607, and the timing control unit 3605. Entered.

  The arithmetic circuit control unit 3602, interrupt control unit 3604, register control unit 3607, and timing control unit 3605 perform various controls based on the decoded instruction. Specifically, the arithmetic circuit control unit 3602 generates a signal for controlling driving of the arithmetic circuit 3601. Further, the interrupt control unit 3604 determines and processes an interrupt request from an external input / output device or a peripheral circuit from the priority or mask state during execution of the CPU program. The register control unit 3607 generates an address of the register 3606, and reads and writes the register 3606 according to the state of the CPU.

  The timing control unit 3605 generates a signal for controlling the driving timing of the arithmetic circuit 3601, the control unit 3602 for the arithmetic circuit, the instruction analysis unit 3603, the interrupt control unit 3604, and the register control unit 3607. For example, the timing control unit 3605 includes an internal clock generation unit that generates an internal clock signal CLK2 (3622) based on the reference clock signal CLK1 (3621), and supplies the clock signal CLK2 to the various circuits.

  FIG. 24 illustrates a display device in which a pixel portion, a CPU, and other circuits are formed over the same substrate, a so-called system-on-panel. Over the substrate 3700, a pixel portion 3701, a scan line driver circuit 3702 that selects pixels included in the pixel portion 3701, and a signal line driver circuit 3703 that supplies video signals to the selected pixels are provided. A CPU 3704 and other circuits such as a control circuit 3705 are connected to each other by wiring drawn from the scan line driver circuit 3702 and the signal line driver circuit 3703. The control circuit includes an interface. Then, a connection portion with an FPC terminal is provided at an end portion of the substrate, and exchange with an external signal is performed.

  As other circuits, a video signal processing circuit, a power supply circuit, a gradation power supply circuit, a video RAM, a memory (DRAM, SRAM, PROM), and the like can be provided over the substrate. These circuits may be formed by an IC chip and mounted on a substrate. Further, the scan line driver circuit 3702 and the signal line driver circuit 3703 are not necessarily formed over the same substrate. For example, only the scan line driver circuit 3702 is formed over the same substrate, and the signal line driver circuit 3703 is formed using an IC chip. May be implemented.

  FIG. 25A shows the form of a packaged CPU. A thin film transistor array 3801 having a CPU function formed over a substrate 3800 has an electrode (a source electrode, a drain electrode, or an electrode formed thereon via an insulating film) 3802 on a CPU surface. The face is in the face-down state. For the substrate 3800, glass or plastic can be used. Further, a wiring board provided with wiring 3803 formed of copper or an alloy thereof, for example, a printed board 3807 is prepared. A connection terminal (pin) 3804 is provided on the printed circuit board 3807. Then, the electrode 3802 and the wiring 3803 are connected through an anisotropic conductive film 3808 and the like. Thereafter, the substrate 3800 is covered with a resin 3805 such as an epoxy resin from above, and a packaged CPU is completed. Alternatively, the outer periphery may be surrounded by plastic or the like while being kept hollow.

  FIG. 25B is different from FIG. 25A in a face-up state in which the electrode 3802 provided on the CPU surface is on the upper side. Then, the substrate 3800 is fixed over the printed circuit board 3807, and the electrode 3802 and the wiring 3803 are connected by the wire 3818. Such connection by a wire is called wire bonding. Then, the electrode 3802 and the bump 3814 connected to the wiring 3803 are connected. Thereafter, the outer periphery is surrounded by plastic 3815 or the like while being kept hollow, and a packaged CPU is completed.

  FIG. 25C illustrates an example in which a thin film transistor array 3801 having a function of a CPU is fixed over a flexible substrate, for example, an FPC (Flexible Printed Circuit). The thin film transistor array 3801 having a CPU function formed over the substrate 3810 is in a face-down state in which the electrode 3802 provided on the CPU surface is on the lower side. Although glass, quartz, metal, bulk semiconductor, and plastic can be used for the substrate 3810, plastic with high flexibility is preferably used in FIG. In addition, a flexible FPC 3817 provided with a wiring 3803 formed of copper or an alloy thereof is prepared. Then, the electrode 3802 and the wiring 3803 are connected through an anisotropic conductive film 3808. Thereafter, the substrate 3800 is covered with a resin 3805 such as an epoxy resin from above, and a packaged CPU is completed.

  The CPU packaged in this way is protected from the outside and becomes easier to carry. Then, a CPU can be mounted at a desired location. In particular, when flexibility is provided as shown in FIG. Further, the function of the CPU can be assisted by packaging.

  As described above, a semiconductor device such as a CPU can be manufactured using the TFT of the present invention with a small gate capacitance and a short channel effect suppressed. Since the CPU formed by the thin film transistor is lightweight, the burden on carrying or mounting can be reduced. A system using various display devices manufactured by using the present invention, such as the CPU described in this embodiment, the liquid crystal display device described in embodiment 3, and the EL display device described in embodiment 5. An on-panel can be manufactured.

  In addition, this embodiment can be freely combined with any description in the embodiment mode and Embodiments 1 to 5 if necessary.

  In this embodiment, an example in which the present invention is applied to a method for manufacturing an ID chip will be described. Note that in this embodiment, an isolated TFT is illustrated as a semiconductor element, but a semiconductor element used for an integrated circuit is not limited to this, and any circuit element can be used. For example, in addition to the TFT, a memory element, a diode, a photoelectric conversion element, a resistance element, a coil, a capacitor element, an inductor, and the like can be typically given.

  Here, the ID chip is an integrated circuit used for identifying an object, and information for identification is recorded in the ID chip itself. The ID chip can transmit and / or receive information to / from the management system and reader by radio waves or electromagnetic waves. By the information that the ID chip has, it becomes possible to know the place of production, the expiration date, the distribution route, etc. of the product to which the ID chip is attached. You can manage safety.

  First, as illustrated in FIG. 26A, a separation layer 4001 is formed over a heat-resistant substrate (first substrate) 4000 by a sputtering method. As the first substrate 4000, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, or the like can be used. Alternatively, a metal substrate including a stainless steel substrate or a semiconductor substrate with an insulating film formed on the surface thereof may be used. A substrate made of a synthetic resin having flexibility such as plastic generally tends to have a lower heat resistant temperature than the above substrate, but can be used as long as it can withstand the processing temperature in the manufacturing process. .

  As the separation layer 4001, a layer containing silicon as its main component, such as amorphous silicon, polycrystalline silicon, single crystal silicon, or microcrystalline silicon (including semi-amorphous silicon) can be used. The separation layer 4001 can be formed by a sputtering method, a low pressure thermal CVD method, a plasma CVD method, or the like. In this embodiment, amorphous silicon with a thickness of about 50 nm is formed by a low pressure thermal CVD method and used as the peeling layer 4001. Note that the separation layer 4001 is not limited to silicon and may be formed using a material that can be selectively removed by etching. The thickness of the release layer 4001 is preferably 50 to 60 nm. For semi-amorphous silicon, the thickness may be 30 to 50 nm.

  Next, a base film 4002 is formed over the peeling layer 4001. The base film 4002 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the first substrate 4000 from diffusing into the semiconductor film and adversely affecting the characteristics of a semiconductor element such as a TFT. The base film 4002 also has a role of protecting the semiconductor element in a process of peeling the semiconductor element later. The base film 4002 may be a single layer or a stack of a plurality of insulating films. Therefore, the insulating film is formed using an insulating film such as silicon oxide, silicon nitride, or silicon nitride oxide that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film.

In this embodiment, a SiON film having a thickness of 100 nm as the first layer base film (lower layer base film) 4002a, a SiNO film having a thickness of 50 nm as the second layer base film (middle layer base film) 4002b, and a third layer base film (upper layer) A base film 4002 is formed by sequentially stacking a SiON film having a thickness of 100 nm as the base film) 4002c, but the material, film thickness, and number of layers of each film are not limited thereto. For example, the lower base film 4002a may be replaced with a SiON film, and a siloxane-based resin having a film thickness of 0.5 to 3 μm may be formed by a spin coat method, a slit coater method, a droplet discharge method, or the like. Further, a silicon nitride film (SiNx, Si ₃ N ₄ or the like) may be used instead of the SiNO film as the middle layer base film 4002b. Further, an SiO ₂ film may be used instead of the SiON film as the upper base film 4002c. Each film thickness is preferably 0.05 to 3 μm, and can be freely selected from the range.

Alternatively, the lower base film 4002a of the base film 4002 closest to the peeling layer 4001 is formed of a SiON film or a SiO ₂ film, the middle base film 4002b is formed of a siloxane-based resin, and the upper base film 4002c is formed of a SiO ₂ film. You may do it.

Here, the silicon oxide film is formed by a method such as thermal CVD, plasma CVD, atmospheric pressure CVD, or bias ECRCVD using a mixed gas such as SiH ₄ and O ₂ or TEOS (tetraethoxysilane) and O _2. Can do. The silicon nitride film can be typically formed by plasma CVD using a mixed gas of SiH ₄ and NH ₃ . In addition, a silicon oxide film containing nitrogen (SiON: O> N) and a silicon nitride film containing oxygen (SiNO: N> O) typically use a mixed gas of SiH ₄ and N ₂ O, and plasma CVD is performed. Can be formed.

  Next, the manufacturing process from the semiconductor film formation on the base film in FIG. 10A to the formation of the first interlayer insulating film in FIG. In addition, as for the manufacturing conditions, manufacturing steps, film forming materials, and the like in this example, those similar to those in Example 3 are used unless otherwise specified.

  However, in this embodiment, n-channel TFTs 4011 and 4013 and a p-channel TFT 4012 are formed on a substrate 4000. The n-channel TFT 4011 includes a gate electrode 4160 including an island-like semiconductor film 4100, a gate insulating film 4120, a first layer gate electrode (lower gate electrode) 4150 and a second layer gate electrode (upper gate electrode) 4140 on a base film 4002. Side walls 4130 and 4131 are provided. In the island-shaped semiconductor film 4100, a source or drain region 4110, a low concentration impurity region 4111, and a channel formation region 4112 are formed.

  The p-channel TFT 4012 includes a gate electrode including an island-shaped semiconductor film 4101, a gate insulating film 4121, a first layer gate electrode (lower gate electrode) 4151, and a second layer gate electrode (upper gate electrode) 4141 on a base film 4002. 4161 and sidewalls 4132 and 4133 are provided. In the island-shaped semiconductor film 4101, a source or drain region 4113 and a channel formation region 4114 are formed.

  The n-channel TFT 4013 includes a gate electrode 4162 including an island-like semiconductor film 4102, a gate insulating film 4122, a first layer gate electrode (lower gate electrode) 4152, and a second layer gate electrode (upper gate electrode) 4142 on a base film 4002. Side walls 4134 and 4135 are provided. In the island-shaped semiconductor film 4102, a source or drain region 4115, a low concentration impurity region 4116, and a channel formation region 4117 are formed.

  Further, a first interlayer insulating film 4200 is formed to cover the island-shaped semiconductor films 4100 to 4102, the gate insulating films 4120 to 4122, the gate electrodes 4160 to 4162, and the sidewalls 4130 to 4135 (see FIG. 26A). ).

  Next, as shown in FIG. 26B, a second interlayer insulating film 4201 is formed over the first interlayer insulating film 4200. The second interlayer insulating film 4201 can be formed using a heat-resistant organic resin such as polyimide, acrylic, or polyamide. In addition to the organic resin, a low dielectric constant material (low-k material), a resin including a Si—O—Si bond formed using a siloxane-based material as a starting material (hereinafter referred to as a siloxane-based resin), or the like is used. be able to. The siloxane-based resin may have at least one of fluorine, alkyl groups, and aromatic hydrocarbons in addition to hydrogen as a substituent. Depending on the material, the second interlayer insulating film 4201 can be formed by spin coating, dip coating, spray coating, droplet discharge method (ink jet method, screen printing, offset printing, etc.), doctor knife, roll coater, curtain coater, A knife coater or the like can be employed. In addition, an inorganic material may be used. In that case, silicon oxide, silicon nitride, silicon oxynitride, PSG (phosphorus glass), BPSG (phosphorus boron glass), an alumina film, or the like can be used. Note that the second interlayer insulating film 4201 may be formed by stacking these insulating films.

  Further, in this embodiment, a third interlayer insulating film 4202 is formed on the second interlayer insulating film 4201. As the third interlayer insulating film 4202, a film containing carbon such as DLC (diamond-like carbon) or carbon nitride (CN), a silicon oxide film, a silicon nitride film, a silicon nitride oxide film, or the like can be used. As a formation method, a plasma CVD method, an atmospheric pressure plasma, or the like can be used. Alternatively, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, polyamide, resist, or benzocyclobutene, a siloxane resin, or the like may be used.

  Note that the second interlayer insulating film 4201 or the third interlayer insulating film 4201 or the third interlayer insulating film 4202 and the second interlayer insulating film 4201 or the third interlayer due to a stress generated by a difference in thermal expansion coefficient between a conductive material or the like constituting a wiring to be formed later. In order to prevent film peeling or cracking of the insulating film 4202, a filler may be mixed in the second interlayer insulating film 4201 or the third interlayer insulating film 4202.

Next, contact holes are formed in the first interlayer insulating film 4200, the second interlayer insulating film 4201, and the third interlayer insulating film 4202. Then, wirings 4300 to 4304 connected to the TFTs 4011 to 4013 through the contact holes are formed. As a gas used for etching at the time of forming the contact hole, a mixed gas of carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ), and helium (He) is used, but a mixed gas of CHF ₃ and He may be used. Good. Furthermore, it is not limited to these gases. In this embodiment, the wirings 4300 to 4304 have a five-layer structure in which Ti, TiN, Al—Si, Ti, and TiN are laminated in this order, and are formed by sputtering and then patterned.

  In addition, by mixing Si in Al, generation of hillocks in resist baking at the time of wiring patterning can be prevented. Further, instead of Si, about 0.5% Cu may be mixed. Further, the hillock resistance is further improved by sandwiching the Al—Si layer with Ti or TiN. In the patterning, it is desirable to use the hard mask made of SiON or the like. Note that the wiring material and the formation method are not limited to these, and the material used for the gate electrode described above may be employed.

  Note that the wirings 4300 and 4301 are in the source region or drain region 4110 of the n-channel TFT 4011, the wirings 4301 and 4302 are in the source region or drain region 4113 of the p-channel TFT 4012, and the wirings 4303 and 4304 are in the source region of the n-channel TFT 4013. Alternatively, they are connected to the drain region 4115, respectively. Further, the wiring 4304 is connected to the gate electrode 4162 of the n-channel TFT 4013. The n-channel TFT 4013 can be used as a memory element of a random number ROM.

  Next, as illustrated in FIG. 27A, a fourth interlayer insulating film 4203 is formed over the third interlayer insulating film 4202 so as to cover the wirings 4300 to 4304. The fourth interlayer insulating film 4203 is formed so as to have a contact hole at a position where the wiring 4300 is partially exposed. Note that the fourth interlayer insulating film 4203 can be formed using a material similar to that of the second interlayer insulating film 4201.

  Next, a conductive material film is formed over the fourth interlayer insulating film 4203 and patterned to form the antenna 4305. The antenna 4305 is formed using a conductive material including one or more metals such as Ag, Au, Cu, Pd, Cr, Mo, Ti, Ta, W, Al, Fe, Co, Zn, Sn, and Ni, or a metal compound. be able to.

  The antenna 4305 is connected to the wiring 4300. Note that in FIG. 27A, the antenna 4305 is directly connected to the wiring 4300; however, the ID chip of the present invention is not limited to this structure. For example, the antenna 4305 and the wiring 4300 may be electrically connected using a wiring formed separately.

  The antenna 4305 can be formed by a printing method, a photolithography method, an evaporation method, a droplet discharge method, or the like. In this embodiment, the antenna 4305 is formed using a single-layer conductive film; however, an antenna 4305 in which a plurality of conductive films are stacked can also be formed. For example, the antenna 4305 may be formed by coating a wiring formed of Ni or the like with electroless plating.

  The droplet discharge method means a method of forming a predetermined pattern by discharging droplets containing a predetermined composition from the pores, and includes an ink jet method and the like in its category. The printing method includes a screen printing method and an offset printing method. By using a printing method or a droplet discharge method, the antenna 4305 can be formed without using an exposure mask. In addition, unlike the photolithography method, there is no waste of material that is removed by etching in the droplet discharge method and the printing method. In addition, since it is not necessary to use an expensive exposure mask, the cost for manufacturing the ID chip can be suppressed.

  In the case of using a droplet discharge method or various printing methods, for example, conductive particles in which Cu is coated with Ag can be used. Note that in the case where the antenna 4305 is formed by a droplet discharge method, it is preferable to perform treatment on the surface of the fourth interlayer insulating film 4203 so that the adhesion of the antenna 4305 is increased.

  Specifically, as a method capable of improving the adhesion, for example, a method of attaching a metal or a metal compound capable of improving the adhesion of the conductive film or the insulating film to the surface of the fourth interlayer insulating film 4203 by a catalytic action, An organic insulating film having high adhesion to the formed conductive film or insulating film, a method of attaching a metal or a metal compound to the surface of the fourth interlayer insulating film 4203, and a surface of the fourth interlayer insulating film 4203 under atmospheric pressure. Alternatively, a method of performing surface modification by performing plasma treatment under reduced pressure may be used. Examples of the metal having high adhesion to the conductive film or insulating film include titanium, titanium oxide, 3d transition elements such as Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn. Is mentioned. Examples of the metal compound include the above-described metal oxides, nitrides, and oxynitrides. Examples of the organic insulating film include polyimide and siloxane resin.

  When the metal or metal compound attached to the fourth interlayer insulating film 4203 has conductivity, the sheet resistance is controlled so that normal driving of the antenna is not hindered. Specifically, the average thickness of the conductive metal or metal compound is controlled to be, for example, 1 to 10 nm, or the metal or metal compound is partially or entirely insulated by oxidation. You can do it. Alternatively, the deposited metal or metal compound may be selectively removed by etching except for the region where the adhesion is desired to be improved. Alternatively, the metal or the metal compound may be selectively attached only to a specific region by using a droplet discharge method, a printing method, a sol-gel method, or the like, instead of attaching the metal or the metal compound to the entire surface of the substrate in advance. Note that the metal or metal compound does not have to be completely continuous on the surface of the fourth interlayer insulating film 4203 and may be dispersed to some extent.

  Then, as shown in FIG. 27B, after the antenna 4305 is formed, a protective layer 4400 is formed over the fourth interlayer insulating film 4203 so as to cover the antenna 4305. The protective layer 4400 is formed using a material that can protect the antenna 4305 when the peeling layer 4001 is later removed by etching. For example, the protective layer 4400 can be formed by applying an epoxy-based, acrylate-based, or silicon-based resin that is soluble in water or alcohols to the entire surface.

In this example, a water-soluble resin (manufactured by Toagosei Co., Ltd .: VL-WSHL10) is applied by spin coating so as to have a film thickness of 30 μm, and after exposure for 2 minutes for temporary curing, UV light is applied to the back surface Exposure to 2.5 minutes and 10 minutes from the surface for a total of 12.5 minutes to perform main curing to form the protective layer 4400. In addition, when laminating | stacking several organic resin, there exists a possibility that it may melt | dissolve partially at the time of application | coating or baking with the solvent currently used between organic resins, or adhesiveness may become high too much. Therefore, in the case where an organic resin that is soluble in the same solvent is used for both the fourth interlayer insulating film 4203 and the protective layer 4400, the fourth interlayer insulating film 4203 is formed so that the protective layer 4400 can be removed smoothly in the subsequent process. It is preferable to form an inorganic insulating film (SiN _x film, SiN _x O _y film, AlN _x film, or AlN _x O _y film) so as to cover it.

  Next, as shown in FIG. 28A, a groove 4401 is formed in order to separate the ID chips. The groove 4401 may be formed to the extent that the peeling layer 4001 is exposed. The groove 4401 can be formed by dicing, scribing, or the like. Note that the groove 4401 is not necessarily formed when the ID chip formed over the first substrate 4000 does not need to be separated.

Next, as shown in FIG. 28B, the peeling layer 4001 is removed by etching. In this embodiment, fluorine halide is used as an etching gas, and the gas is introduced from the groove 4401. In this embodiment, for example, ClF ₃ (chlorine trifluoride) is used, and the temperature is 350 ° C., the flow rate is 300 sccm, the atmospheric pressure is 800 Pa, and the time is 3 hours. Alternatively, a gas in which nitrogen is mixed with ClF ₃ gas may be used. By using halogenated fluorine such as ClF ₃ , the peeling layer 4001 is selectively etched, and the first substrate 4000 can be peeled from the TFTs 4011 to 4013. The halogenated fluorine may be a gas or a liquid.

  Next, as illustrated in FIG. 29A, the peeled TFTs 4011 to 4013 and the antenna 4305 are attached to the second substrate 4500 with an adhesive 4501. As the adhesive 4501, a material capable of bonding the second substrate 4500 and the base film 4002 is used. As the adhesive 4501, for example, various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive can be used.

  As the second substrate 4500, an organic material such as flexible paper or plastic can be used. Alternatively, a flexible inorganic material may be used for the second substrate 4500. As the plastic substrate, ARTON (manufactured by JSR) made of polynorbornene with a polar group can be used. Polyesters represented by polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), polyimide, acrylonitrile butadiene styrene resin, polyvinyl chloride, polypropylene, polyvinyl acetate, acrylic resin and the like. The second substrate 4500 preferably has a high thermal conductivity of about 2 to 30 W / mK in order to diffuse the heat generated in the integrated circuit.

  Next, as shown in FIG. 29B, after the protective layer 4400 is removed, an adhesive 4503 is applied over the fourth interlayer insulating film 4203 so as to cover the antenna 4305, and a cover material 4502 is attached thereto. As in the case of the second substrate 4500, the cover material 4502 can be formed using a flexible organic material such as paper or plastic. The thickness of the adhesive 4503 may be, for example, 10 to 200 μm.

  The adhesive 4503 is formed using a material capable of bonding the cover material 4502 to the fourth interlayer insulating film 4203 and the antenna 4305. As the adhesive 4503, for example, various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive can be used.

The ID chip is completed through the above-described steps. By the above manufacturing method, an extremely thin integrated circuit having a total film thickness of 0.3 μm to 3 μm, typically about 2 μm, can be formed between the second substrate 4500 and the cover material 4502. Note that the thickness of the integrated circuit includes not only the thickness of the semiconductor element itself but also the thicknesses of various insulating films and interlayer insulating films formed between the adhesive 4501 and the adhesive 4503. The area occupied by the integrated circuit included in the ID chip, 5 mm square (25 mm ²⁾ or less, and more preferably may be 0.3mm square (0.09 mm ²⁾ to 4 mm square (16 mm ²⁾ degree.

  Note that the mechanical strength of the ID chip can be increased by positioning the integrated circuit at a more central position between the second substrate 4500 and the cover material 4502. Specifically, when the distance between the second substrate 4500 and the cover material 4502 is d, the distance x between the second substrate 4500 and the center in the thickness direction of the integrated circuit satisfies the following Expression 2. Thus, it is desirable to control the thickness of the adhesive 4501 and the adhesive 4503.

  Preferably, the thicknesses of the adhesive 4501 and the adhesive 4503 are controlled so as to satisfy the following expression 3.

  Note that FIG. 29B illustrates an example in which the cover material 4502 is used; however, the present invention is not limited to this structure. For example, the process may be ended up to the step shown in FIG.

  Note that in this embodiment, a method for peeling the substrate and the integrated circuit by providing a peeling layer between the first substrate 4000 having high heat resistance and the integrated circuit and removing the peeling layer by etching is shown. The manufacturing method of the ID chip of the present invention is not limited to this configuration. For example, a metal oxide film may be provided between a substrate having high heat resistance and the integrated circuit, and the integrated circuit may be peeled by weakening the metal oxide film by crystallization. Alternatively, a separation layer using an amorphous semiconductor film containing hydrogen is provided between a substrate with high heat resistance and an integrated circuit, and the separation layer is removed by laser light irradiation to separate the substrate and the integrated circuit. You may do it. Alternatively, the integrated circuit may be separated from the substrate by mechanically removing the highly heat-resistant substrate on which the integrated circuit is formed or removing the substrate by etching with a solution or gas.

  In order to ensure the flexibility of the ID chip, when an organic resin is used for the adhesive 4501 in contact with the base film 4002, a silicon nitride film or a silicon oxide film containing nitrogen is used as the base film 4002. Alkali metals such as Na and alkaline earth metals can be prevented from diffusing into the semiconductor film.

  Further, the surface of the object has a curved surface, whereby the second substrate 4500 of the ID chip bonded to the curved surface is bent so as to have a curved surface drawn by the movement of the generating line such as a conical surface or a column surface. In this case, it is desirable to align the direction of the bus and the direction in which the carriers of the TFTs 4011 to 4013 move. With the above structure, even when the second substrate 4500 is bent, it can be prevented that the characteristics of the TFTs 4011 to 4013 are affected. In addition, by setting the ratio of the area occupied by the island-shaped semiconductor film in the integrated circuit to 1 to 30%, even when the second substrate 4500 is bent, the characteristics of the TFTs 4011 to 4013 are affected. It can be suppressed more.

  Note that although an example in which the antenna is formed over the same substrate as the integrated circuit has been described in this embodiment, the present invention is not limited to this structure. An antenna formed over another substrate and the integrated circuit may be bonded later to be electrically connected.

  In general, the frequency of radio waves used in an ID chip is 13.56 MHz and 2.45 GHz, and it is very important to increase the versatility to form an ID chip so that radio waves of that frequency can be detected. Is important to.

In addition, the ID chip of this embodiment has an advantage that radio waves are less shielded than an ID chip formed using a semiconductor substrate, and the signal can be prevented from being attenuated by shielding the radio waves. Therefore, it is not necessary to use a semiconductor substrate, so that the cost of the ID chip can be significantly reduced. For example, a case where a silicon substrate having a diameter of 12 inches is used is compared with a case where a glass substrate of 730 × 920 mm ² is used. The area of the former silicon substrate is about 73000 mm ² , while the area of the latter glass substrate is about 672000 mm ² , and the glass substrate corresponds to about 9.2 times the silicon substrate. When the area of the latter glass substrate is about 672000 mm ² , ignoring the area consumed by dividing the substrate, it is calculated that about 672,000 1 mm square ID chips can be formed, and the number is about 9.2 times that of the silicon substrate. It is equivalent to the number of Capital investment for mass production of ID chips requires fewer steps when a 730 × 920 mm ² glass substrate is used than when a 12-inch diameter silicon substrate is used. It can be done in a third. Further, in the present invention, the glass substrate can be used again after the integrated circuit is peeled off. Therefore, cost can be significantly reduced as compared with the case of using a silicon substrate, even in view of the cost of filling a damaged glass substrate or cleaning the surface of the glass substrate. Even if the glass substrate is discarded without being reused, the cost of a 730 × 920 mm ² glass substrate is about half that of a silicon substrate having a diameter of 12 inches, thus greatly reducing the cost of the ID chip. You can see that

Therefore, it can be seen that when a glass substrate of 730 × 920 mm ² is used, the price of the ID chip can be reduced to about 1/30 compared to the case of using a 12-inch diameter silicon substrate. Since the ID chip is expected to be used on the premise that it is disposable, the ID chip of the present invention, which can significantly reduce the cost, is very useful for the above application.

  Note that in this example, the example in which the integrated circuit is separated and attached to a flexible substrate is described; however, the present invention is not limited to this structure. For example, in the case where a substrate having a heat resistant temperature that can withstand heat treatment in a manufacturing process of an integrated circuit, such as a glass substrate, is used, the integrated circuit is not necessarily peeled off.

  In addition, this embodiment can be freely combined with any description of the embodiment mode and Embodiments 1 to 6 if necessary.

  As an electronic device to which the present invention is applied, a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device (car audio component, etc.), a computer, a game device, a portable information terminal (mobile computer, cellular phone, portable type) A game machine or an electronic book), an image playback device provided with a recording medium (specifically, a device provided with a display capable of playing back a recording medium such as a Digital Versatile Disc (DVD) and displaying the image). It is done. Specific examples of these electronic devices are shown in FIGS. 30A to 30D and FIGS. 31A to 31D.

  FIG. 30A illustrates a light-emitting display device, such as a television receiver. A housing 5001, a display portion 5003, a speaker portion 5004, and the like are included. The present invention can be applied to the display portion 5003, a control circuit portion, and the like. In order to increase the contrast in the pixel portion, a polarizing plate or a circular polarizing plate may be provided. For example, a film may be provided on the sealing substrate in the order of a 1 / 4λ plate, a 1 / 2λ plate, and a polarizing plate. Further, an antireflection film may be provided on the polarizing plate. By using the present invention, reliability is improved and display quality is also improved. Further, by attaching an ID chip manufactured by the method described in Example 7 to the light-emitting display device, a distribution route and the like can be clarified.

  FIG. 30B illustrates a liquid crystal display or an OLED display, which includes a housing 5101, a support base 5102, a display portion 5103, and the like. The present invention can be applied to the display portion 5103, a control circuit portion, and the like. By using the present invention, reliability is improved and display quality is also improved. Further, by attaching an ID chip manufactured by the method described in Example 7 to the display, the distribution route and the like can be clarified.

  FIG. 30C illustrates a mobile phone, which includes a main body 5201, a housing 5202, a display portion 5203, an audio input portion 5204, an audio output portion 5205, operation keys 5206, an antenna 5208, and the like. The present invention can be applied to the display portion 5203, a control circuit portion, and the like. By using the present invention, reliability is improved and display quality is also improved. Further, by attaching an ID chip manufactured by the method described in Embodiment 7 to the mobile phone, the distribution route and the like can be clarified.

  FIG. 30D illustrates a computer, which includes a main body 5301, a housing 5302, a display portion 5303, a keyboard 5304, an external connection port 5305, a pointing mouse 5306, and the like. The present invention can be applied to the display portion 5303, a control circuit portion, and the like. By using the present invention, reliability is improved and display quality is also improved. Further, by attaching an ID chip manufactured by the method described in Example 7 to the computer, the distribution route and the like can be clarified.

  FIG. 31A illustrates a portable computer, which includes a main body 6001, a display portion 6002, a switch 6003, operation keys 6004, an infrared port 6005, and the like. The present invention can be applied to the display portion 6002, the control circuit portion, and the like. By using the present invention, reliability is improved and display quality is also improved. Further, by attaching an ID chip manufactured by the method described in Example 7 to the computer, the distribution route and the like can be clarified.

  FIG. 31B illustrates a portable game machine, which includes a housing 6101, a display portion 6102, speaker portions 6103, operation keys 6104, a recording medium insertion portion 6105, and the like. The present invention can be applied to the display portion 6102, a control circuit portion, and the like. By using the present invention, reliability is improved and display quality is also improved. Further, by sticking the ID chip manufactured by the method described in Embodiment 7 to the game machine, the distribution route and the like can be clarified.

  FIG. 31C illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 6201, a housing 6202, a display portion A 6203, a display portion B 6204, and a recording medium (DVD or the like). A reading unit 6205, operation keys 6206, a speaker unit 6207, and the like are included. A display portion A6203 mainly displays image information, and a display portion B6204 mainly displays character information. The present invention can be applied to the display portion A 6203, the display portion B 6204, a control circuit portion, and the like. Note that an image reproducing device provided with a recording medium includes a home game machine and the like. By using the present invention, reliability is improved and display quality is also improved. Further, by attaching an ID chip manufactured by the method described in Embodiment 7 to the image reproducing apparatus, the distribution route and the like can be clarified.

  FIG. 31D illustrates a TV that can carry only a display wirelessly. A housing 6302 includes a battery and a signal receiver, and the display portion 6304 and the speaker portion 6307 are driven by the battery. The battery can be repeatedly charged by the charger 6300. The charger 6300 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 6302 is controlled by operation keys 6306. The device illustrated in FIG. 31D can also be referred to as a video / audio two-way communication device because a signal can be sent from the housing 6302 to the charger 6300 by operating the operation key 6306. In addition, by operating the operation key 6306, a signal is transmitted from the housing 6302 to the charger 6300, and further, a signal that can be transmitted by the charger 6300 is received by another electronic device, thereby controlling communication of the other electronic device. It can be said to be a general-purpose remote control device. The present invention can be applied to the display portion 6304, a control circuit portion, and the like. By using the present invention, reliability is improved and display quality is also improved. Further, by attaching an ID chip manufactured by the method described in Embodiment 7 to the TV, a distribution route and the like can be clarified.

  Display devices used in these electronic devices can use not only a glass substrate but also a heat-resistant plastic substrate depending on the size, strength, or purpose of use. As a result, the weight can be further reduced.

  It should be noted that the examples shown in this embodiment are just examples, and the present invention is not limited to these applications.

  In addition, this embodiment can be implemented by being freely combined with any description of the embodiment mode and Embodiments 1 to 7.

  According to the present invention, a fine TFT can be manufactured which has a small gate capacitance, suppresses a short channel effect, and can be driven at high speed. The area of the circuit using the TFT of the present invention can be reduced, and the semiconductor device manufactured according to the present invention can be driven at high speed.

Sectional drawing of TFT of this invention. The top view of the conventional TFT. The top view of TFT of this invention. 4A and 4B illustrate a manufacturing process of a TFT of the present invention. 4A and 4B illustrate a manufacturing process of a TFT of the present invention. The figure which shows the relationship between the etching time of the lower layer gate electrode of this invention, and an undercut width | variety. The figure which shows the relationship between the etching time of the lower layer gate electrode of this invention, and an undercut width | variety. 4A and 4B illustrate a manufacturing process of a TFT of the present invention. 4A and 4B illustrate a manufacturing process of a TFT of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device of the present invention. 4 is a top view of a pixel of the liquid crystal display device of the present invention. FIG. 4A and 4B illustrate a manufacturing process of a liquid crystal display device using the liquid crystal dropping method of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal display device using the liquid crystal dropping method of the present invention. The figure which shows bonding of the board | substrate in the liquid crystal display device of this invention. 4A and 4B illustrate a manufacturing process of an EL display device of the present invention. 4A and 4B illustrate a manufacturing process of an EL display device of the present invention. 4A and 4B illustrate a manufacturing process of an EL display device of the present invention. 4A and 4B show a manufacturing process of a CPU of the present invention. The top view of CPU of this invention. The figure which shows the system on panel of this invention. The figure which shows the form of the packaged CPU of this invention. 4A and 4B show a manufacturing process of an ID chip of the present invention. 4A and 4B show a manufacturing process of an ID chip of the present invention. 4A and 4B show a manufacturing process of an ID chip of the present invention. The figure which shows the manufacturing process of ID chip of this invention FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. 4A and 4B illustrate a manufacturing process of a TFT of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Semiconductor film 101 Gate insulating film 102 1st layer gate electrode 103 2nd layer gate electrode 104 Side wall 110 Gate wiring 111 Gate wiring 200 Substrate 201 Base film 201a Silicon nitride film 201b Silicon oxide film 202 Semiconductor film 203 Insulating film 204 Conductive film 205 Conductive film 210 First layer gate electrode 211 Second layer gate electrode 221 Side wall 222 Gate insulating film 230 Drain region 231 Low concentration impurity region 232 Channel formation region 240 Offset region

Claims (7)

Form a base film on the substrate,
Forming a semiconductor film on the base film;
Forming a first conductive film on the semiconductor film via an insulating film;
Forming a second conductive film on the first conductive film;
Etching the second conductive film to form a second layer gate electrode;
Etching the first conductive film to form a first layer gate electrode;
The width of the first layer gate electrode is smaller than the width of the second layer gate electrode,
Covering the side surfaces of the first layer gate electrode and the second layer gate electrode, forming a sidewall,
Forming a channel formation region in a region under the first layer gate electrode in the semiconductor film;
Forming a low-concentration impurity region in a region under the sidewall in the semiconductor film;
A method for manufacturing a semiconductor device, wherein a source region or a drain region is formed in a region where the first layer gate electrode, the second layer gate electrode, and the sidewall are not formed in the semiconductor film. Form a base film on the substrate,
Forming a semiconductor film on the base film;
Forming a first conductive film on the semiconductor film via an insulating film;
Forming a second conductive film on the first conductive film;
A second layer gate electrode is formed by etching the second conductive film by anisotropic etching,
The first conductive film is etched by isotropic etching to form a first layer gate electrode,
The width of the first layer gate electrode is smaller than the width of the second layer gate electrode, and one end of the first layer gate electrode and one end of the second layer gate electrode coincide with each other,
Covering the side surfaces of the first layer gate electrode and the second layer gate electrode, forming a sidewall,
Forming a channel formation region in a region under the first layer gate electrode in the semiconductor film;
Forming a low-concentration impurity region in a region under the sidewall in the semiconductor film;
Forming a source region or a drain region in a region where the first layer gate electrode, the second layer gate electrode and the sidewall are not formed in the semiconductor film;
An offset region is formed between the low concentration impurity region and the channel formation region between the other end of the first layer gate electrode and the other end of the second layer gate electrode. A method for manufacturing a semiconductor device. In claim 1 or claim 2,
The first conductive film is any one of a silicon (Si) film, a tungsten (W) film, a molybdenum (Mo) film, an aluminum (Al) film, a titanium (Ti) film, and a tantalum nitride (TaN) film. There is provided a method for manufacturing a semiconductor device. In claim 1 or claim 2,
The method for manufacturing a semiconductor device is characterized in that the second conductive film is any one of a tungsten (W) film, an aluminum (Al) film, a molybdenum (Mo) film, and a tantalum nitride (TaN) film. In any one of Claims 1 thru | or 4,
The combination of the first conductive film and the second conductive film includes silicon (Si) film and tungsten (W) film, tungsten (W) film and aluminum (Al) film, molybdenum (Mo) film and aluminum (Al ) Film, aluminum (Al) film and tungsten (W) film, aluminum (Al) and molybdenum (Mo) film, titanium (Ti) film and tungsten (W) film, tungsten (W) film and tantalum nitride (TaN) film A method for manufacturing a semiconductor device, which is any one of a tantalum nitride (TaN) film and an aluminum (Al) film, and a tantalum nitride (TaN) film and a tungsten (W) film. In any one of Claims 2 thru | or 5,
Etching gas used for the isotropic etching is:
When the combination of the first conductive film and the second conductive film is a silicon (Si) film and a tungsten (W) film, a mixed gas of CF ₄ and O ₂ ;
When the combination of the first conductive film and the second conductive film is a tungsten (W) film and an aluminum (Al) film, a mixed gas of CF ₄ and O _2, a mixed gas of SF ₆ and He, or CF ₄ , a mixed gas of Cl ₂ and O _2,
When the combination of the first conductive film and the second conductive film is a molybdenum (Mo) film and an aluminum (Al) film, a mixed gas of CF ₄ and O ₂ or a mixed gas of SF ₆ and He;
The combination of the first conductive film and the second conductive film is an aluminum (Al) film and a tungsten (W) film, an aluminum (Al) film and a molybdenum (Mo) film, or a titanium (Ti) film and tungsten (W). ) In the film, a mixed gas of BCl ₃ and Cl ₂ ,
When the combination of the first conductive film and the second conductive film is a tungsten (W) film and a tantalum nitride (TaN) film, a mixed gas of CF ₄ , Cl ₂ and O ₂ ,
When the combination of the first conductive film and the second conductive film is a tantalum nitride (TaN) film and an aluminum (Al) film, a mixed gas of CF ₄ and O ₂ , a Cl ₂ gas, and a mixed gas of HBr and Cl ₂ Or a mixed gas of CF ₄ and Cl ₂ ,
The combination of the first conductive film and the second conductive film is a Cl ₂ gas, a mixed gas of HBr and Cl ₂ , or a mixed gas of CF ₄ and Cl _{2 in} a tantalum nitride (TaN) film and a tungsten (W) film. ,
A method for manufacturing a semiconductor device. In any one of Claims 1 thru | or 6,
The end portion of the first layer gate electrode is shorter than the end portion of the second layer gate electrode by an undercut width W,
The method of manufacturing a semiconductor device, wherein the undercut width is 0.05 μm to 0.3 μm.

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