JP2006041234A - Optical transmitting module and optical receiving module - Google Patents

Optical transmitting module and optical receiving module Download PDF

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JP2006041234A
JP2006041234A JP2004219843A JP2004219843A JP2006041234A JP 2006041234 A JP2006041234 A JP 2006041234A JP 2004219843 A JP2004219843 A JP 2004219843A JP 2004219843 A JP2004219843 A JP 2004219843A JP 2006041234 A JP2006041234 A JP 2006041234A
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conductor
substrate
electrode
electrically connected
equipotential
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JP4828103B2 (en
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Atsushi Kawamura
敦志 河村
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Mitsubishi Electric Corp
三菱電機株式会社
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Abstract

An optical transmission module and an optical reception module that can reduce crosstalk, are easy to mount, and can ensure high reliability.
An optical transmission module includes a laser diode and a substrate on which the laser diode is mounted. The laser diode has a surface electrode and a back electrode facing each other. The signal transmission line 16 and equipotential planes 17 and 18 separated from both sides of the signal transmission line 16 are provided, and the back electrode of the laser diode 11 is directly electrically connected to the signal transmission line 15. The equipotential plane 17 is electrically connected by the metal wire 13, and the surface electrode of the laser diode 11 and the equipotential plane 18 are electrically connected by the metal wire 14.
[Selection] Figure 1

Description

  The present invention relates to an optical transmission module and an optical reception module used for optical communication, optical measurement, and the like.

  2. Description of the Related Art In an optical subscriber line terminating device of FTTH (Fiber To The Home), an optical transceiver module that performs bidirectional transmission using a single optical fiber is used. In the optical transceiver module, a laser diode (LD) and a photodiode (PD) are housed in the same package, and the two wavelengths used for transmission and reception are combined and demultiplexed by a diffractive optical element to realize coupling with an optical fiber. is doing.

  The light having a wavelength of 1.3 μm emitted from the laser diode is converged by an LD lens for incidence on a subsequent optical fiber, passes through a diffractive optical element for wavelength selection, and enters the optical fiber. On the other hand, the light having a wavelength of 1.55 μm emitted from the optical fiber is diffracted by the diffractive optical element for wavelength selection, further condensed by the PD lens, and reaches the light receiving surface of the photodiode. The drive signal of the laser diode and the light reception signal of the photodiode are transmitted to an external circuit through a metal pin protruding into the package and a gold wire connected to the metal pin.

JP 2003-86881 A (page 4, FIG. 2, FIG. 5) Japanese Patent Publication No. 6-50803 JP-A-6-343058

  In such an optical transceiver module, a laser diode and a photodiode are mounted close to each other in the same package. Therefore, if the conductor through which the drive signal of the laser diode flows and the conductor through which the light reception signal of the photodiode is electrically coupled, crosstalk occurs in which the electromagnetic field radiated by the drive signal is mixed into the light reception signal. . In general, unnecessary electromagnetic field radiation and coupling often occurs mainly between gold wires for extracting signals from elements and packages.

  In the above Patent Document 3, a wire conductor is connected between the optical connector terminal and the circuit board on the lead frame with a wire, and crosses over the wire between the connection portions protruding from the lead frame to the optical connector side. The crosstalk is reduced by erection. However, since the signal wire and the linear conductor are easily in contact with each other, the short-circuit failure rate is increased, and there is a problem in mounting.

  An object of the present invention is to provide an optical transmission module and an optical reception module that can reduce crosstalk, can be easily mounted, and can ensure high reliability.

An optical transmission module according to the present invention includes a light emitting element,
An optical transmission module comprising a substrate for mounting a light emitting element,
The light emitting element has a front electrode and a back electrode,
On the surface of the substrate, a signal transmission line and first and second equipotential planes separated from both sides of the signal transmission line are provided, respectively.
The back electrode of the light emitting element is directly electrically connected to the signal transmission line of the substrate,
The surface electrode of the light emitting element and the first equipotential plane are electrically connected via the first conductor,
The surface electrode of the light emitting element and the second equipotential plane are electrically connected through the second conductor.
An optical receiver module according to the present invention includes a light receiving element having a signal electrode,
A semiconductor amplifying element for amplifying an electric signal from the light receiving element;
A light receiving module comprising a light receiving element and a substrate for mounting a semiconductor amplifying element,
The signal electrode of the light receiving element and the semiconductor amplifying element are electrically connected via a signal transmission conductor,
First and second equipotential members having a height substantially equal to or higher than the height of the light receiving element with respect to the substrate surface are provided separately from both sides of the light receiving element,
The shield conductor is bridged between the first equipotential member and the second equipotential member so as to cross over the signal transmission conductor.

  According to the optical transmission module according to the present invention, radiation of an electromagnetic field can be suppressed by directly electrically connecting the back electrode of the light emitting element to the signal transmission line of the substrate. In addition, since the first and second equipotential planes and the first and second conductors are arranged so as to surround the signal transmission line and the light emitting element, a shielding effect can be obtained, thereby shielding unnecessary electromagnetic fields. And crosstalk can be reduced.

  Further, according to the optical receiver module of the present invention, by surrounding the signal transmission conductor that transmits the electric signal from the light receiving element with the shield conductor, unnecessary electromagnetic fields can be shielded and crosstalk can be reduced. Further, the first and second equipotential members having a height substantially equal to or higher than the height of the light receiving element are provided on both sides of the light receiving element, and the shield conductor is bridged between them, thereby the signal transmission conductor. And the gap between the signal transmission conductor and the shield conductor can be stably maintained. Therefore, short circuit failure can be prevented, and mounting can be facilitated and high reliability can be achieved.

Embodiment 1 FIG.
FIG. 1 shows a first embodiment of the present invention. FIG. 1 (a) is a partial cross-sectional view showing a sealed state of an optical transceiver module, and FIG. 1 (b) shows an overall structure of the optical transceiver module. It is a perspective view. As shown in FIG. 1A, the optical transmission / reception module 1 includes an optical transmission module 10, an optical reception module 30, and a mount member 2 for fixing these modules integrally. Stored inside the package.

  The mount member 2 is formed of a metal material having a rectangular parallelepiped shape and is fixed on the stem 4 of the package. The plurality of pins 3 are formed of a metal material or the like, and penetrate the stem 4 in an electrically insulated state. Each pin 3 is electrically connected to the optical transmission module 10 and the optical reception module 30 by a metal wire such as Au.

  A metal cap 5 is provided on the upper surface of the stem 4 to seal the optical transceiver module 1. An opening for light passage is provided at the upper center of the cap 5, and a window member 6 formed of a transparent material such as glass is provided so as to seal the opening. On the window member 6, an optical multiplexing / demultiplexing element 7 such as a diffraction grating is attached.

  The optical transmission module 10 is provided with a laser diode (LD) 11 that emits transmission light Lo having a wavelength of 1.3 μm, for example. For example, the optical receiver module 30 is provided with a photodiode (PD) 31 that receives received light Li having a wavelength of 1.55 μm. The laser diode 11 and the photodiode 31 are positioned so as to coincide with the optical axes of the optical multiplexing / demultiplexing element 7.

  As shown in FIG. 1B, the optical transmission module 10 includes a laser diode 11 and a substrate 15 on which the laser diode 11 is mounted. The laser diode 11 has a front electrode and a back electrode.

  The substrate 15 is made of an electrically insulating material such as ceramics, and is attached to the vertical surface of the mount member 2. A signal transmission line 16 made of a metal thin film and a pair of equipotential planes 17 and 18 are provided on the surface of the substrate 15, respectively.

  The signal transmission line 16 is configured by a microstrip line or the like so that a high-frequency signal of 100 MHz to several GHz can be transmitted. The back electrode of the laser diode 11 is directly electrically connected to the upper end of the signal transmission line 16. The lower end of the signal transmission line 16 is electrically connected to the pin 3 via a metal wire 25.

  The equipotential planes 17 and 18 are arranged so as to be separated from both sides of the signal transmission line 16 at a predetermined interval. For example, when the thickness of the substrate 15 is set to about 100 μm, the interval between the signal transmission line 16 and the equipotential planes 17 and 18 is set to about 15 μm.

  The surface electrode of the laser diode 11 and the upper portion of the equipotential plane 17 are electrically connected via a metal wire 13. Further, the surface electrode of the laser diode 11 and the upper portion of the equipotential plane 18 are electrically connected via a metal wire 14.

  On the back surface of the substrate 15, a solid metal thin film is formed as a third equipotential plane, and is electrically connected to the equipotential planes 17 and 18 on the substrate surface through a large number of through holes. These equipotential planes are typically held at the ground potential together with the mount member 2, the stem 4, the cap 5, and the like, and function as a shield member for shielding unnecessary electromagnetic fields. In the present embodiment, the wires 13 and 14 extending from the surface electrode of the laser diode 11 to both sides also function as shield members.

  On the other hand, the optical receiving module 30 includes a photodiode 31, a preamplifier IC 32 configured with a semiconductor integrated circuit, a substrate 40 on which the photodiode 31 and the preamplifier IC 32 are mounted, and the like. The substrate 40 is formed of an electrically insulating material such as ceramics and is attached to the horizontal surface of the mount member 2.

  On the upper surface of the photodiode 31, a light receiving surface for receiving the received light Li and a signal electrode for outputting an electric signal subjected to photoelectric conversion are provided. The signal electrode and the input terminal of the preamplifier IC 32 are electrically connected via a signal transmission conductor 50. In this embodiment, a metal wire is used as the signal transmission conductor 50. An output terminal, a power supply terminal, a ground terminal, and the like of the preamplifier IC 32 are electrically connected to a conductor on the substrate 40 via a metal wire. Various conductors provided on the substrate 40 are electrically connected to the pins 3 via metal wires 58, 59 and the like.

  A pair of equipotential members 33 a and 34 a are arranged on both sides of the photodiode 31 so as to be separated from the photodiode 31. The equipotential members 33 a and 34 a are made of a conductive material such as metal, and are positioned at a height that is substantially the same as or higher than the height of the photodiode 31 with respect to the surface of the substrate 40.

  In the present embodiment, chip capacitors 33 and 34, which are surface mount type electronic components, are mounted on the substrate 40, and the surface electrodes of the chip capacitors 33 and 34 are also used as the equipotential members 33a and 34a. The chip capacitor 33 can be used as a reverse bias decoupling capacitor for the photodiode 31, and the chip capacitor 34 can be used as a power supply decoupling capacitor for the preamplifier IC 32. The back electrodes of the chip capacitors 33 and 34 are directly electrically connected to the conductor on the substrate 40.

  Between the equipotential member 33a on the chip capacitor 33 and the equipotential member 34a on the chip capacitor 34, a shield conductor 52 made of a plurality of metal wires is bridged. The shield conductor 52 passes above the signal transmission conductor 50 extending from the photodiode 31 and intersects the signal transmission conductor 50 so as to be substantially orthogonal.

  With such an arrangement, mutual inductance due to magnetic coupling between the shield conductor 52 and the signal transmission conductor 50 can be reduced, so that crosstalk between conductors can be suppressed.

  Further, by using the chip capacitors 33 and 34 to raise the height of the equipotential members 33 a and 34 a that support both ends of the shield conductor 52, a sufficient gap is provided between the shield conductor 52 and the signal transmission conductor 50. Since a gap can be secured, a short circuit failure can be prevented.

  The surface electrodes of the chip capacitors 33 and 34 are electrically connected to the ground conductor on the substrate 40 via a metal wire 53 and the like. Thereby, since the shield conductor 52 is held at the ground potential, it functions as a shield member for shielding unnecessary electromagnetic fields.

  2A is a plan view showing the substrate 15 of the optical transmission module 10, and FIG. 2B is a cross-sectional view taken along the line A1-A1 in FIG. As described above, the signal transmission line 16 that transmits the drive signal of the laser diode 11 and the equipotential planes 17 and 18 that function as shield members so as to sandwich the signal transmission line 16 are disposed on the surface of the substrate 15. It is formed.

  As shown in FIG. 2B, an equipotential plane 19 made of a solid metal thin film is provided on the back surface of the substrate 15 so as to face the signal transmission line 16 and the equipotential planes 17 and 18 on the substrate surface side. Provided. The equipotential plane 19 is electrically connected to the equipotential planes 17 and 18 through a large number of through holes 20, and these are grounded through the mount member 2 and the like.

  With this arrangement, the wires 13 and 14 extending from the surface electrode of the laser diode 11 on both sides, the equipotential planes 17 and 18 on the front surface side, the through holes 20 inside the substrate, and the equipotential plane 19 on the back surface side The diode 11 and the signal transmission line 16 are surrounded, and a shielding effect is obtained. Therefore, the electromagnetic field radiated from the signal transmission line 16 and the electromagnetic field entering from the outside can be shielded, and crosstalk can be reduced.

  In addition, by directly bonding the laser diode 11 to the signal transmission line 16, the inductance component of the signal line can be reduced, so that unnecessary electromagnetic field radiation can be suppressed.

  Further, it is preferable to set the distance between the signal transmission line 16 and the equipotential planes 17 and 18 to be sufficiently smaller than the thickness of the substrate 15, so that the electromagnetic field radiated from the signal transmission line 16 to the back side can be reduced inside the substrate. It can be confined in the cavity and leakage to the outside can be reduced.

  FIG. 3 is a graph showing an example of the measurement result of the amount of crosstalk from the laser diode 11 to the photodiode 31. The vertical axis represents the amount of crosstalk (dB), and the horizontal axis represents the logarithm of frequency (MHz). A solid line indicates the crosstalk amount before grounding the equipotential planes 17 to 19, and a broken line indicates the crosstalk amount after grounding the equipotential planes 17 to 19.

  Looking at the graph, when the wires 13 and 14 and the equipotential planes 17 to 19 surrounding the laser diode 11 and the signal transmission line 16 are grounded, they function as a shield member, and therefore, over a frequency range of about 100 MHz to 3 GHz. It can be seen that the amount of crosstalk is reduced by about 5 dB.

  In the above description, an example in which one metal wire is used as each of the wires 13 and 14 extending from the surface electrode of the laser diode 11 to both sides has been shown. However, it is preferable to use a plurality of metal wires, thereby providing a conductor. The effect of reducing the electrical resistance, the effect of reducing the inductance component of the conductor, and the effect of increasing the shielding area of the electromagnetic field can be obtained, and ground reinforcement and crosstalk reduction can be achieved.

  4A is a plan view showing the substrate 40 of the optical receiving module 30, and FIG. 4B is a cross-sectional view taken along line A2-A2 in FIG. 4A. As described above, the photodiode 31, the preamplifier IC 32, the chip capacitor 33 having a capacitance of about 470 pF, and the chip capacitor 34 having a capacitance of about 10 nF, for example, are mounted on the surface of the substrate 40. A plurality of conductor patterns 41 to 47 that are electrically connected to each electronic component are formed.

  The signal electrode of the photodiode 31 and the input terminal of the preamplifier IC 32 are electrically connected via the signal transmission conductor 50.

  The conductor pattern 41 supplies a reverse bias voltage to the photodiode 31 and is directly electrically connected to a reverse bias electrode provided on the back surface of the photodiode 31. Further, the reverse bias terminal of the preamplifier IC 32 and the conductor pattern 41 are electrically connected via a metal wire 51, and a reverse bias voltage is supplied from the preamplifier IC 32. Further, the back electrode of the chip capacitor 33 for reverse bias decoupling is directly electrically connected to the conductor pattern 41.

  The conductor patterns 42, 43, 45 are grounds having a large number of through holes, and the conductor pattern 42 and the equipotential member 33 a provided on the surface of the chip capacitor 33 are electrically connected via a plurality of wires 53. The The conductor pattern 43 and the equipotential member 34 a provided on the surface of the chip capacitor 34 are electrically connected via a plurality of wires 54. The equipotential member 33a and the equipotential member 34a are electrically connected via a shield conductor 52 composed of a plurality of wires.

  The conductor pattern 44 is a power supply line of the preamplifier IC 32 and is electrically connected to the power supply terminal of the preamplifier IC 32 via a metal wire. Further, the back electrode of the chip capacitor 34 for power supply decoupling is directly electrically connected to the conductor pattern 44.

  The conductor patterns 46 and 47 are strip lines having a predetermined characteristic impedance, for example, 50Ω, and one end of each of the conductor patterns 46 and 47 is electrically connected to the output terminal of the preamplifier IC 32 via a metal wire. Is done. As shown in FIG. 1B, the other ends of the conductor patterns 46 and 47 are electrically connected to the pins 3 via wires 58 and 59, respectively.

  As shown in FIG. 4B, a conductor pattern 48 made of a solid metal thin film is formed on the back surface of the substrate 40 in the same manner as the substrate 15 of the optical transmission module 10, and ground conductor patterns 42, 43 and 45 are electrically connected through a number of through holes.

  With this arrangement, the shield conductor 52, the equipotential members 33a and 34a, the wires 53 and 54, the conductor patterns 42 and 43 on the substrate surface, the through holes in the substrate, and the conductor pattern 48 on the back surface of the substrate The transmission conductor 50 and the reverse bias wire 51 are surrounded, and a shielding effect is obtained. Therefore, the electromagnetic field radiated from the signal transmission conductor 50 and the electromagnetic field entering from the outside can be shielded, and crosstalk can be reduced.

  Further, since the shield conductor 52 passes above the signal transmission conductor 50 and intersects the signal transmission conductor 50 so as to be substantially orthogonal, the mutual inductance between the shield conductor 52 and the signal transmission conductor 50 is reduced. The crosstalk between conductors can be reduced.

  Moreover, since both ends of the shield conductor 52 can be raised by setting the height of the chip capacitors 33 and 34 to be substantially the same as or higher than the height of the photodiode 31 with respect to the substrate surface, the shield conductor 52 A short circuit failure with the signal transmission conductor 50 can be prevented. For example, when the height of the photodiode 31 is about 150 μm, the height of the chip capacitors 33 and 34 is preferably set to about 150 μm or more, and more preferably about 300 μm corresponding to twice.

  FIG. 5 is a graph showing an example of the measurement result of the crosstalk amount from the laser diode 11 to the photodiode 31. The vertical axis represents the amount of crosstalk (dB), and the horizontal axis represents the logarithm of frequency (MHz). When there is no shield conductor 52 for the solid line, when one metal wire is used as the shield conductor 52 for the broken line, when three metal wires are used as the shield conductor 52 for the dashed line, the two-dot chain line is used for the shield conductor 52 Each of the cases where five metal wires are used is shown. In addition, the diameter of the used metal wire is 25 micrometers.

  Looking at the graph, just using one metal wire as the shield conductor 52 reduces the crosstalk amount by about 10 dB over the frequency range of about 100 MHz to 3 GHz, and using the three metal wires reduces about 15 dB. It can be seen that when 5 metal wires are used, the reduction is about 20 dB.

Embodiment 2. FIG.
In the present embodiment, a ribbon conductor made of a metal plate is used instead of the wires 13 and 14 of the optical transmission module 10. A ribbon conductor made of a metal plate is used as the shield conductor 52 of the optical receiving module 30. For example, a metal ribbon having a width of 150 μm can be used instead of a metal wire having a diameter of 25 μm.

  Since the ribbon conductor has a smaller electrical resistance and inductance component of the conductor than the wire, the ground is strengthened. In addition, the use of the ribbon conductor increases the electromagnetic field shielding area, thereby reducing crosstalk. In addition, since the ribbon conductor has higher strength than the wire, it can prevent contact with other conductors such as the signal transmission conductor 50 and a short circuit.

  Further, when a plurality of metal wires are used, a plurality of bonding steps are required. However, the ribbon conductor can reduce the number of bonding steps and facilitate mounting.

Embodiment 3 FIG.
FIG. 6 shows a third embodiment of the present invention. FIG. 6 (a) is a plan view showing a substrate 40 of the optical receiving module 30, and FIG. 6 (b) is a plan view in FIG. 6 (a). It is sectional drawing along the A3-A3 line.

  In the present embodiment, a shield substrate capable of double-sided wiring is used as the shield conductor 52 of the optical receiving module 30. In this shield substrate, a solid metal thin film is formed on the entire upper surface of an electrical insulating member 52a such as ceramic, and metal thin films are also formed on both ends of the lower surface of the substrate, and both metal thin films are electrically connected by through holes. . In a region excluding both ends on the lower surface of the substrate, the electrical insulating member 52a is exposed.

  Such a shield substrate is bridged between the chip capacitors 33 and 34, passes over the signal transmission conductor 50, and is disposed so as to be substantially orthogonal to the signal transmission conductor 50. Accordingly, the same effects as those of the second embodiment can be obtained, and the lower surface facing the signal transmission conductor 50 is covered with the electrically insulating material. Can be prevented.

Embodiment 4 FIG.
FIG. 7 is a plan view showing a fourth embodiment of the present invention. In the above-described embodiment, the example in which the preamplifier IC 32 supplies the reverse bias voltage to the photodiode 31 has been described. In the present embodiment, an example in which the reverse bias voltage is supplied from the outside will be described. In FIG. 7, the shield conductor 52 is not shown for easy understanding, but actually, the shield conductor 52 such as a metal wire, a metal ribbon, or a shield substrate is bridged between the chip capacitors 33 and 34. The

  The conductor pattern 41 extends to the rear end of the substrate so as to divide the ground conductor pattern 42. The conductor pattern 41 is directly electrically connected to a reverse bias electrode provided on the back surface of the photodiode 31 in the middle of the conductor pattern 41 for reverse bias decoupling. The back electrode of the chip capacitor 33 is directly electrically connected.

  Such a configuration eliminates the need for a wire for connecting the reverse bias terminal of the preamplifier IC 32 and the conductor pattern 41, thereby reducing the number of wires that cause crosstalk.

Embodiment 5. FIG.
FIG. 8 is a plan view showing a fifth embodiment of the present invention. In the above-described embodiment, the example in which the signal electrode of the photodiode 31 and the input terminal of the preamplifier IC 32 are electrically connected via the signal transmission conductor 50 made of a metal wire has been described. However, in this embodiment, the signal transmission conductor 50 is connected. An example in which a part of is replaced with the conductor pattern 49 on the substrate surface will be described. In FIG. 8, illustration of the shield conductor 52 is omitted for easy understanding, but actually, the shield conductor 52 such as a metal wire, a metal ribbon, or a shield substrate is bridged between the chip capacitors 33 and 34. The

  When the preamplifier IC 32 is disposed at a position slightly away from the photodiode 31, the conductor pattern 41 is extended to the vicinity of the preamplifier IC 32 and is electrically connected to the reverse bias terminal of the preamplifier IC 32 using a short metal wire.

  A conductor pattern 49 such as a strip line is formed between the photodiode 31 and the preamplifier IC 32, and one end of the conductor pattern 49 is electrically connected to the signal electrode of the photodiode 31 using a short metal wire. The other end is electrically connected to the input terminal of the preamplifier IC 32 using a short metal wire.

  With such a configuration, the metal wire for electrical connection can be shortened to reduce crosstalk, and signal transmission on the substrate is possible, so that high frequency characteristics can be improved.

Embodiment 6 FIG.
FIG. 9 is a plan view showing a sixth embodiment of the present invention. In the present embodiment, as shown in FIG. 8, a part of the signal transmission conductor 50 is replaced with a conductor pattern 49 on the substrate surface, and as shown in FIG. 7, the conductor pattern 41 is extended to the rear of the substrate, The reverse bias voltage to the photodiode 31 can be supplied from the outside. In FIG. 9, the shield conductor 52 is not shown for easy understanding, but actually, the shield conductor 52 such as a metal wire, a metal ribbon, or a shield substrate is bridged between the chip capacitors 33 and 34. The

  With such a configuration, the metal wire for electrical connection can be shortened to reduce crosstalk, and signal transmission on the substrate is possible, so that high frequency characteristics can be improved. Moreover, crosstalk can be reduced by reducing the number of wires.

Embodiment 7 FIG.
FIG. 10 is a plan view showing a seventh embodiment of the present invention. In this embodiment, as shown in FIG. 8, a part of the signal transmission conductor 50 is replaced with a conductor pattern 49 on the surface of the substrate, the conductor pattern 41 for reverse bias is extended to the vicinity of the preamplifier IC 32, and the photodiode 31 As described above, the number of metal wires for electrical connection is reduced by using so-called back-illuminated photodiodes. In FIG. 10, the shield conductor 52 is not shown for easy understanding, but actually, the shield conductor 52 such as a metal wire, a metal ribbon, or a shield substrate is bridged between the chip capacitors 33 and 34. The

  On the upper surface of the photodiode 31, a light receiving surface for receiving the received light Li is provided. A signal electrode and a reverse bias electrode are provided on the lower surface of the photodiode 31. The signal electrode of the photodiode 31 is directly electrically connected to one end of the conductor pattern 49. The reverse bias electrode of the photodiode 31 is directly electrically connected to the conductor pattern 41. The other end of the conductor pattern 49 is electrically connected to the input terminal of the preamplifier IC 32 using a short metal wire.

  Since the metal wire for electrically connecting the preamplifier IC 32 and the conductor patterns 41 and 49 causes crosstalk coupling, it is desirable that the metal wire be sufficiently away from the laser diode 11 that can be a noise source. Therefore, as shown in FIG. 1, when the laser diode 11 and the photodiode 31 are arranged close to each other, the crosstalk can be further reduced by omitting the metal wire close to the laser diode 11. In addition, when the transmission distance in the conductor pattern 49 becomes long, the crosstalk coupling with the noise source becomes small, but the deterioration of the transmission signal also increases, and both are in a trade-off relationship. It is preferable to set the transmission distance to about 600 μm.

Embodiment 8 FIG.
FIG. 11 is a plan view showing an eighth embodiment of the present invention. In the present embodiment, as shown in FIGS. 8 and 10, a part of the signal transmission conductor 50 is replaced with a conductor pattern 49 on the substrate surface, and the reverse bias conductor pattern 41 is extended to the vicinity of the preamplifier IC 32. A plurality of connection terminals are arranged on the back surface of the preamplifier IC 32, and the number of metal wires is reduced by direct connection to the conductor pattern. In FIG. 11, the shield conductor 52 is not shown for easy understanding, but actually, the shield conductor 52 such as a metal wire, a metal ribbon, or a shield substrate is bridged between the chip capacitors 33 and 34. The

  Connection terminals necessary for an amplification operation such as a signal input terminal, a signal output terminal, a power supply terminal, and a ground terminal are provided on the back surface of the preamplifier IC 32. On the surface of the substrate 40, a plurality of conductor patterns are provided for direct electrical connection with these terminals.

  With such a configuration, the number of metal wires for electrical connection can be greatly reduced, so that crosstalk can be further reduced.

  Note that the high-performance optical transceiver module 1 can be realized by appropriately combining the embodiments related to the optical transmission module 10 and the embodiments related to the optical reception module 30 in the above description.

  Moreover, in each embodiment, although the example which used the laser diode as a light emitting element was shown, it is also possible to use a light emitting diode and another light source.

  In each embodiment, an example in which a photodiode is used as a light receiving element has been described. However, a phototransistor or other photoelectric conversion element can also be used.

  In each embodiment, the chip capacitors 33 and 34 are used to raise the height of the equipotential members 33a and 34a, thereby stabilizing the ground potential, efficiently using the board area, and reducing the number of components. Although the illustrated example is shown, it is also possible to use insulating spacers and other electronic components.

FIG. 1A shows a first embodiment of the present invention, FIG. 1A is a partial cross-sectional view showing a sealed state of an optical transceiver module, and FIG. 1B is a perspective view showing an overall structure of the optical transceiver module. 2A is a plan view showing the substrate 15 of the optical transmission module 10, and FIG. 2B is a cross-sectional view taken along the line A1-A1 in FIG. 3 is a graph showing an example of a measurement result of a crosstalk amount from a laser diode 11 to a photodiode 31. 4A is a plan view showing the substrate 40 of the optical receiving module 30, and FIG. 4B is a cross-sectional view taken along line A2-A2 in FIG. 4A. FIG. 5 is a graph showing an example of the measurement result of the crosstalk amount from the laser diode 11 to the photodiode 31. FIG. 6A shows a third embodiment of the present invention, FIG. 6A is a plan view showing a substrate 40 of the optical receiver module 30, and FIG. 6B is a line A3-A3 in FIG. 6A. FIG. It is a top view which shows 4th Embodiment of this invention. It is a top view which shows 5th Embodiment of this invention. It is a top view which shows 6th Embodiment of this invention. It is a top view which shows 7th Embodiment of this invention. It is a top view which shows 8th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Optical transmission / reception module, 2 Mount member, 3 Pin, 4 Stem, 5 Cap, 6 Window member, 7 Optical multiplexing / demultiplexing element, 10 Optical transmission module, 11 Laser diode, 13, 14, 25, 51, 53, 54, 58 , 59 wires, 15 substrates, 16 signal transmission lines, 17-19 equipotential planes, 20 through holes, 30 optical receiver modules, 31 photodiodes, 32 preamplifier ICs, 33, 34 chip capacitors, 33a, 34a equipotential members, 40 Substrate, 41-49 conductor pattern, 50 signal transmission conductor, 52 shield conductor.


Claims (13)

  1. A light emitting element;
    An optical transmission module comprising a substrate for mounting a light emitting element,
    The light emitting element has a front electrode and a back electrode,
    On the surface of the substrate, a signal transmission line and first and second equipotential planes separated from both sides of the signal transmission line are provided, respectively.
    The back electrode of the light emitting element is directly electrically connected to the signal transmission line of the substrate,
    The surface electrode of the light emitting element and the first equipotential plane are electrically connected via the first conductor,
    An optical transmission module, wherein a surface electrode of a light emitting element and a second equipotential plane are electrically connected via a second conductor.
  2.   2. The optical transmission according to claim 1, wherein a third equipotential plane is disposed on the back surface of the substrate so as to be opposed to at least the signal transmission line and electrically connected to the first and second equipotential planes. module.
  3.   3. The optical transmission module according to claim 1, wherein at least one of the first conductor and the second conductor is composed of a plurality of wires.
  4.   3. The optical transmission module according to claim 1, wherein at least one of the first conductor and the second conductor is formed in a plate shape.
  5. A light receiving element having a signal electrode;
    A semiconductor amplifying element for amplifying an electric signal from the light receiving element;
    A light receiving module comprising a light receiving element and a substrate for mounting a semiconductor amplifying element,
    The signal electrode of the light receiving element and the semiconductor amplifying element are electrically connected via a signal transmission conductor,
    First and second equipotential members having a height substantially equal to or higher than the height of the light receiving element with respect to the substrate surface are provided separately from both sides of the light receiving element,
    An optical receiver module, wherein the shield conductor is bridged between the first equipotential member and the second equipotential member so as to cross over the signal transmission conductor.
  6.   6. The optical receiver module according to claim 5, wherein the shield conductor is composed of a plurality of wires.
  7.   6. The optical receiver module according to claim 5, wherein the shield conductor is formed in a plate shape.
  8.   8. The optical receiver module according to claim 7, wherein an electrically insulating member is disposed on the lower surface of the shield conductor.
  9. One of the first and second equipotential members is also used as an electrode of a reverse bias decoupling capacitor for the light receiving element,
    6. The optical receiver module according to claim 5, wherein the other of the first and second equipotential members is also used as an electrode of a power supply decoupling capacitor for a semiconductor amplifying element.
  10.   6. The optical receiver module according to claim 5, wherein a part of the signal transmission conductor is provided on a surface of the substrate.
  11. A reverse bias electrode is provided on the back surface of the light receiving element,
    6. The optical receiver module according to claim 5, wherein a conductive pattern for supplying a reverse bias from the outside is provided on the surface of the substrate directly electrically connected to the reverse bias electrode.
  12. On the back surface of the light receiving element, a signal electrode and a reverse bias electrode are provided,
    6. The optical receiver module according to claim 5, wherein a signal transmission conductor that is directly electrically connected to the signal electrode and a conductor pattern that is directly electrically connected to the reverse bias electrode are provided on the surface of the substrate.
  13. On the back surface of the semiconductor amplifying element, a signal input terminal, a signal output terminal, a power supply terminal and a ground terminal are provided,
    The surface of the substrate is provided with a plurality of conductor patterns that are directly electrically connected to the signal input terminal, the signal output terminal, the power supply terminal, and the ground terminal, respectively. Optical receiver module.


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JP2008270559A (en) * 2007-04-20 2008-11-06 Sumitomo Electric Ind Ltd Optical communication module
JP2010237641A (en) * 2009-03-13 2010-10-21 Fujikura Ltd Optical module and cable with module
JP4713634B2 (en) * 2006-02-28 2011-06-29 株式会社フジクラ Single fiber bidirectional optical module
US8145061B2 (en) 2009-01-13 2012-03-27 Sumitomo Electric Industries, Ltd. Optical module implementing a light-receiving device and a light-transmitting device within a common housing
JP2012137537A (en) * 2010-12-24 2012-07-19 Auto Network Gijutsu Kenkyusho:Kk Optical connector
KR101456971B1 (en) * 2013-05-06 2014-11-04 주식회사 루멘스 Cross-talk preventing apparatus of motion senor
CN109075874A (en) * 2016-04-28 2018-12-21 华为技术有限公司 Transistor outline (TO) encapsulates optical transceiver

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